KR20050064352A - Fabricating method of electroluminescent device - Google Patents

Abstract

A method of manufacturing an organic light emitting display device according to the present invention includes the steps of forming a driving thin film transistor on the substrate; Forming a conductive material layer connected to the driving thin film transistor on the entire surface of the substrate above the thin film transistor; Forming a photosensitive organic material layer over the entire substrate above the conductive material layer; Exposing the photosensitive organic material layer by disposing a mask having a transmissive part, a blocking part, and a transflective part on the photosensitive organic material layer; Developing the photosensitive organic material layer to form a photosensitive organic material pattern comprising a first region corresponding to the transflective portion and having a first thickness and a second region corresponding to the blocking portion and having a second thickness greater than the first thickness. Forming; Forming a first electrode by etching the conductive material layer using the photosensitive organic material pattern as an etching mask; Etching the photosensitive organic material pattern to form an insulating layer having an opening corresponding to the first region; Forming an organic light emitting layer connected to the first electrode through the opening on the insulating layer; And forming a second electrode on an entire surface of the substrate above the organic light emitting layer.

Description

Fabrication Method of Electroluminescent Device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an organic electroluminescent device (OELD), and more particularly to a method of manufacturing an active matrix organic electroluminescent device (OELD).

One of the new flat panel displays, the organic light emitting display device is self-luminous, and thus has a better viewing angle and contrast ratio than a liquid crystal display device. In addition, since it is possible to drive DC low voltage, fast response speed, and all solid, it is strong against external shock, wide use temperature range, and especially inexpensive in terms of manufacturing cost. Such an organic light emitting diode is also referred to as an organic light emitting diode (OLED).

The organic electroluminescent device is a deposition and encapsulation equipment because the process is very simple, unlike a liquid crystal display device or a plasma display panel (PDP).

In particular, in the active matrix method, a voltage controlling a current applied to a pixel is charged in a storage capacitor (C _ST ), and the gate is applied by applying a voltage until the next frame signal is applied. Drive continuously for one screen regardless of the number of wires.

Therefore, in the active matrix system, since the same luminance is displayed even when a low current is applied, low power consumption, high definition, and large size can be obtained.

Hereinafter, the basic structure and operation characteristics of the active matrix organic electroluminescent device will be described in detail with reference to the accompanying drawings.

1 is a circuit diagram showing the configuration of one pixel region of a general active matrix organic electroluminescent device.

As shown, a scan line is formed in a first direction, a signal line and a power line are formed in a second direction crossing the first direction and spaced apart from each other by a predetermined distance. In this example, one pixel region is defined.

The scanning line and the intersection of the signal line has the addressing element switching thin film transistor (addressing element); and is formed with a (T _S Switching TFT), it is connected to the switching thin film transistor (T _S) of storage capacitor (C _ST) is formed And a driving thin film transistor T _D , which is a current source element, is connected to a connection portion and a power line of the switching thin film transistor T _S and the storage capacitor C _ST to form the driving thin film transistor T A first electrode is connected to T _D ), and the first electrode is connected to the second electrode through an electroluminescent diode (D _EL ) of a constant current driving method.

The switching thin film transistor T _S controls the gate voltage of the driving thin film transistor T _D , and the storage capacitor C _ST stores a voltage applied to the driving thin film transistor T _D.

Hereinafter, the driving principle of the active matrix organic light emitting display device will be described.

In the active matrix method, when the gate signal is applied to the gate of the selected switching thin film transistor, the switching thin film transistor is turned on, and the data signal passes through the switching thin film transistor to be applied to the driving thin film transistor and the storage capacitor. When the transistor is turned on, current from the power supply line is applied to the organic light emitting layer through the gate of the driving thin film transistor to emit light.

At this time, the degree of opening and closing of the driving thin film transistor is changed according to the magnitude of the data signal, so that gray scale display can be performed by adjusting the amount of current flowing through the driving thin film transistor.

In the non-selection period, the data signal charged in the storage capacitor is continuously applied to the driving thin film transistor, so that the organic light emitting diode can emit light continuously until the next screen signal is applied.

FIG. 2 is a plan view of one pixel area of a conventional active matrix type organic light emitting display device, and an example of a two TFT structure having one switching thin film transistor and one driving thin film transistor will be described.

As shown in the drawing, the gate wiring 37 is formed in the first direction, intersects with the gate wiring 37, and the data wiring 51 and the power line 41 are formed to be spaced apart from each other, and the gate wiring 37 is formed. ), The pixel region P is defined by an area where the data line 51 and the power line 41 cross each other.

The switching thin film transistor T _S is positioned in an area where the gate wiring 37 and the data wiring 51 cross each other, and the driving thin film transistor T _D is located at a point where the switching thin film transistor T _S and the power line 41 cross each other. ) And the capacitor electrode 34 forming an integrated pattern with the semiconductor layer 31 of the switching thin film transistor T _S overlaps the power line 41 to form the storage capacitor C _ST .

In addition, the first electrode 58 is formed in connection with the driving thin film transistor T _D , and although not shown in the drawing, the organic light emitting layer and the second electrode are sequentially formed in the region covering the first electrode 58. Formed to form an organic light emitting diode (D _EL ).

The driving thin film transistor T _D includes a driving semiconductor layer 32 and a driving gate electrode 38, and the switching thin film transistor T _S includes a switching semiconductor layer 31 and a switching gate electrode 35.

Hereinafter, the stacked structure of the organic light emitting diode, the driving thin film transistor, and the storage capacitor will be described in detail with reference to the accompanying drawings.

FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 2.

As shown in FIG. 3, the buffer layer 30 is formed on the substrate 1, and the semiconductor layer 32, the gate electrode 38, the source and drain electrodes 50 and 52 are disposed on the buffer layer 30. A driving thin film transistor T _D is formed, the source electrode 50 is connected to a power electrode 42 which is a part of the power line 41 of FIG. 2, and is transparent to the drain electrode 52. The first electrode 58 made of a conductive material is connected.

A capacitor electrode 34 made of the same material as that of the semiconductor layer 32 is formed in a lower portion corresponding to the power electrode 42, so that the power electrode 42 and the capacitor electrode 34 overlap each other. The area constitutes a storage capacitor C _ST .

In addition, an organic light emitting layer 64 and a second electrode 66 made of an opaque metal material are sequentially stacked on the first electrode 58 to form an organic light emitting diode D _EL .

Looking at the stack structure of the insulating layers around the lower portion of the organic light emitting diode (D _EL ), the buffer layer 30 to buffer between the substrate 1 and the semiconductor layer 32 and the storage capacitor C _ST. ), A first insulating layer 40 used as an insulator, a second insulating layer 44 between the drain electrode 52 and the power electrode 42, and the first electrode 58 and the drain electrode 52. ) And a third insulating layer 54 between the first insulating layer 54 and the fourth insulating layer 60 between the first electrode 58 and the organic light emitting layer 64 are sequentially stacked. The insulating layers 40, 44, 54, and 60 each include contact holes (not shown) for electrical connection between the respective layers.

Although not shown in detail in the drawing, the first electrode 58 is patterned in units of subpixels, which are the minimum units for implementing the screen.

When the structure of the organic light emitting diode D _EL is described in more detail, a fourth insulating layer 60 having an opening exposing the first electrode 58 is formed on the first electrode 58. have.

In general, since the first electrode 58 does not have an excellent step coverage, the first electrode 58 may not have a predetermined thickness substantially at each position due to the step difference of the material forming the lower layer. The electric field tends to be concentrated at the edge portion A of the one electrode 58. Therefore, when the organic light emitting layer 64 is directly formed on the first electrode 58, a leakage current is likely to occur at the edge of the first electrode 58, which may cause short-circuit defects.

In order to prevent such a defect, the fourth insulating layer 60 described above is required. That is, the fourth insulating layer 60 covers the edge portion A of the first electrode 58, and at the same time, the opening to allow the first electrode 58 to contact the organic light emitting layer 64 in a subsequent process. It is formed to have.

The fourth insulating layer 60 also serves to reduce parasitic capacitance between the second electrode 66 and the gate wiring and the data wiring, which are not shown. bank) shape.

An organic light emitting layer 60 is formed on the fourth insulating layer 60 to be connected to the first electrode 58 through an opening of the fourth insulating layer 60, and covers the organic light emitting layer 60. The second electrode 66 is formed on the front surface.

However, in order to form the fourth insulating layer 60, a photolithography process using a separate mask must be performed, and thus the formation of the fourth insulating layer 60 has a problem of increasing process time and manufacturing cost.

The manufacturing process of the organic light emitting diode will be described in detail with reference to the accompanying drawings.

4A to 4F are cross-sectional views illustrating a manufacturing process of an organic light emitting diode of a conventional organic light emitting diode, and show a cross section taken along the cutting line IV-IV of FIG. 2.

As shown in FIG. 4A, after the buffer layer 30 and the first to second insulating layers 40 and 44 are continuously formed on the substrate ₁ , the drain electrode of the driving thin film transistor (T _D of FIG. 3) ( 52).

After the conductive material layer 58a and the photoresist (PR) layer 58b are continuously formed on the entire surface of the substrate 1 on which the drain electrode 52 is formed, the first transmission portion c1 and the first transmission portion c1 are formed on the substrate 1. The first mask m1 having the first blocking portion d1 is aligned and exposed.

As shown in FIG. 4B, the exposed photoresist layer (58b of FIG. 4A) is developed to form a photoresist pattern 58c corresponding to the blocking portion d1 of the first mask m1.

As shown in FIG. 4C, after etching the lower conductive material layer (58a of FIG. 4B) using the photoresist pattern (58c of FIG. 4B) as an etching mask, the remaining photoresist pattern (58c of FIG. 4B) is etched. By stripping, the first electrode 58 can be obtained.

As shown in FIG. 4D, after the photosensitive organic material layer 60a is formed on the entire surface of the substrate 1 on which the first electrode 58 is formed, the second transmission portion c2 and the second transmission portion c2 are formed on the substrate 1. The second mask m2 having the second blocking portion d2 is aligned and exposed.

As shown in FIG. 4E, by developing the exposed photosensitive organic material layer (60a in FIG. 4D), the fourth insulating layer having an opening 60b corresponding to the second transmission portion c2 of the second mask m2. (60) can be obtained. Since the opening 60b is formed to expose a portion of the center portion of the lower first electrode 58, the edge portion A of the first electrode 58 is completely covered by the fourth insulating layer 60. Contact with the organic electroluminescent layer formed in a subsequent process can be prevented.

As shown in FIG. 4F, the organic light emitting layer 64, which is in contact with the first electrode 58 through the opening of the fourth insulating layer 60 (60b in FIG. 4E), is formed on the upper portion of the fourth insulating layer 60. After the formation in the pixel region, the second electrode 66 is formed on the entire surface of the substrate 1 on which the organic light emitting layer 64 is formed, thereby completing the organic light emitting diode D _EL .

The organic light emitting diode D _EL is connected to the first electrode 58 through the opening 60b through which the organic light emitting layer 64 exposes the center portion of the first electrode 58. The edge portion A) is prevented from coming into direct contact with the organic light emitting layer 64, so that short-circuit defects are prevented from occurring.

However, since a photolithography process using a separate mask is added, the process of forming the organic light emitting diode (D _EL ) is complicated, and thus, the process time and manufacturing cost are increased, and the yield is decreased.

In order to solve the above problems, the present invention simplifies the process by using a diffraction exposure mask when forming the organic light emitting diode of the organic light emitting diode, and prevents direct contact between the first electrode of the organic light emitting diode and the organic light emitting layer. An object of the present invention is to provide a method of manufacturing an electroluminescent device.

In order to achieve the above object, the present invention comprises the steps of forming a driving thin film transistor on the substrate; Forming a conductive material layer connected to the driving thin film transistor on the entire surface of the substrate above the thin film transistor; Forming a photosensitive organic material layer over the entire substrate above the conductive material layer; Exposing the photosensitive organic material layer by disposing a mask having a transmissive part, a blocking part, and a transflective part on the photosensitive organic material layer; Developing the photosensitive organic material layer to form a photosensitive organic material pattern comprising a first region corresponding to the transflective portion and having a first thickness and a second region corresponding to the blocking portion and having a second thickness greater than the first thickness. Forming; Forming a first electrode by etching the conductive material layer using the photosensitive organic material pattern as an etching mask; Etching the photosensitive organic material pattern to form an insulating layer having an opening corresponding to the first region; Forming an organic light emitting layer connected to the first electrode through the opening on the insulating layer; It provides a method of manufacturing an organic electroluminescent device comprising the step of forming a second electrode on the front surface of the substrate above the organic electroluminescent layer.

Transmittance of the transflective portion of the mask is less than the transmittance of the transmissive portion of the mask is larger than the blocking portion of the mask, a diffraction pattern may be formed on the transflective portion of the mask.

The opening exposes a central portion of the first electrode, and the insulating layer covers an edge portion of the first electrode.

The conductive material layer may be etched using a wet etching method, and the photosensitive organic material pattern may be etched using a dry etching method.

In addition, the method of manufacturing an organic light emitting display device according to an embodiment of the present invention includes the steps of forming a gate wiring on the substrate; Forming a data line crossing the gate line; Forming a power line crossing the gate line and spaced apart from the data line to define a subpixel area and to be connected to the driving thin film transistor; The method may further include forming a switching thin film transistor connected to the gate wiring, the data wiring, and the driving thin film transistor.

In addition, the present invention comprises the steps of forming a driving thin film transistor on the substrate; Forming a conductive material layer connected to the driving thin film transistor on the entire surface of the substrate above the thin film transistor; Forming a photosensitive organic material layer over the entire substrate above the conductive material layer; Exposing the photosensitive organic material layer by disposing a mask having a transmissive part, a blocking part, and a transflective part on the photosensitive organic material layer; Developing the photosensitive organic material layer to form a photosensitive organic material pattern comprising a first region corresponding to the transflective portion and having a first thickness and a second region corresponding to the blocking portion and having a second thickness greater than the first thickness. Forming; Simultaneously etching the photosensitive organic material pattern and the conductive material layer to form an insulating layer having an opening corresponding to the first region and a first electrode corresponding to the first and second regions; Forming an organic light emitting layer connected to the first electrode through the opening on the insulating layer; It provides a method of manufacturing an organic electroluminescent device comprising the step of forming a second electrode on the front surface of the substrate above the organic electroluminescent layer.

The insulating layer covers an edge portion of the first electrode and the opening exposes a central portion of the first electrode.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

5 is a cross-sectional view illustrating one pixel of an organic light emitting display device according to an exemplary embodiment of the present invention.

As shown in FIG. 5, the buffer layer 130 is formed on the substrate 100, and the semiconductor layer 132, the gate electrode 138, the source and drain electrodes 150 and 152 are formed on the buffer layer 130. A driving thin film transistor T _D is formed, and the source electrode 150 is connected to a power electrode 142 which is a part of a power line (not shown), and the drain electrode 152 is connected to the organic light emitting diode. The first electrode 158 of the diode D _EL is connected. The first electrode 158 may be made of indium-tin-oxide (ITO) or indium-zinc-oxide (IZO).

A capacitor electrode 134 made of the same material as the semiconductor layer 132 is formed in an insulated lower portion corresponding to the power electrode 142 so that the power electrode 142 and the capacitor electrode 134 overlap each other. The area constitutes a storage capacitor C _ST .

In addition, an organic light emitting layer 164 and a second electrode 166 made of an opaque metal material are sequentially stacked on the first electrode 158 to form an organic light emitting diode D _EL .

Looking at the stacked structure of the insulating layers around the organic light emitting diode (D _EL ), the buffer layer 130 that buffers the substrate 100 and the semiconductor layer 132, and the storage capacitor (C _ST) ), A first insulating layer 140 used as an insulator, a second insulating layer 144 between the drain electrode 152 and the power electrode 142, and the first electrode 158 and the drain electrode 152. ) And a third insulating layer 154 between the first insulating layer 154 and the fourth insulating layer 160 between the first electrode 158 and the organic light emitting layer 164 are sequentially stacked. The insulating layers 140, 144, 154, and 160 each include contact holes (not shown) for electrical connection between the respective layers.

Although not shown in detail in the drawing, the first electrode 158 is patterned in units of subpixels, which is a minimum unit for implementing a screen.

The organic electroluminescent diode D _EL will be described in more detail. A fourth insulating layer 160 having an opening exposing the first electrode 158 is formed on the first electrode 158. have.

The fourth insulating layer 160 covers the edge A of the first electrode 158 and is formed so that its end coincides with the end of the edge A of the first electrode 158. That is, the fourth insulating layer 160 has the same shape as the first electrode 158 except for the opening.

Since the fourth insulating layer 160 covers the edge A of the first electrode 158, the organic electroluminescent layer 164 formed on the fourth insulating layer 160 and the edge of the first electrode 158 are formed. Direct contact with (A) is prevented, and short-circuit defects are prevented as well, and at the same time, the fourth insulating layer 160 has an opening exposing the center portion of the first electrode 158, so that the organic light emitting layer ( 164 may contact the central portion of the first electrode 158 through the opening of the fourth insulating layer 160. The second electrode 166 is formed on the entire surface of the substrate covering the organic light emitting layer 160.

The fourth insulating layer 160 may be formed through a photolithography process using a photosensitive organic material. In an embodiment of the present invention, the first electrode 158 and the fourth insulating layer 160 are formed using a diffraction exposure mask. The manufacturing process of the was simplified.

The manufacturing process of the organic light emitting diode will be described in detail with reference to the accompanying drawings.

6A to 6E are cross-sectional views illustrating a manufacturing process of an organic light emitting diode of an organic light emitting diode according to an embodiment of the present invention.

Drain electrodes of the substrate 100, buffer layer 130 and the first and second insulating layers (140, 144) driving thin film transistor (T _D in Fig. 5) was continuously formed to the upper portion as shown in 6a ( 152).

A third insulating layer 154 is formed on the drain electrode 152 and a contact hole exposing the drain electrode 152 is formed.

After the conductive material layer 158a made of a conductive material and the photosensitive organic material layer 160a made of a photosensitive organic material are successively formed on the third insulating layer 154, the transparent part C is formed on the substrate 100. The mask M having the blocking part D and the transflective part E is aligned and exposed.

The conductive material layer 158a is connected to the drain electrode 152 through the contact hole of the third insulating layer 154, and may be made of indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). .

The transflective portion E of the mask M transmits only a portion of the exposed light to irradiate the photosensitive organic material layer 160a, and the energy of the light passing through the transflective portion E is blocked. It is larger than the energy of light passing through and less than the energy of light passing through the transmission (C). The semi-transmissive portion E may be formed using a semi-transmissive material, or may be formed using a diffraction pattern.

As shown in FIG. 6B, the exposed photosensitive organic material layer (160a of FIG. 6A) is developed to form the photosensitive organic material pattern 160b. The photosensitive organic material pattern 160b corresponds to the transflective portion E of the mask M of FIG. 6A and has a first thickness E1 having a first thickness t1 and the mask M of FIG. 6A. The second region D1 corresponds to the blocking unit D and has a second thickness t2. Since the energy of light irradiated to the first region E1 is greater than the energy of light irradiated to the second region D1, the first thickness t1 has a smaller value than the second thickness t2.

As shown in FIG. 6C, the first conductive layer 158 may be obtained by etching the lower conductive material layer 158a of FIG. 6B using the photosensitive organic material pattern 160b as an etching mask. For example, the first electrode 158 may be formed using a wet etching method.

As shown in FIG. 6D, a fourth insulating layer having an opening 160c exposing the center portion of the first electrode 158 by etching the upper photosensitive organic material pattern 160b of FIG. 6c. Form layer 160. Since the photosensitive organic material pattern 160b of FIG. 6C includes first and second regions E1 and D1 having first and second thicknesses t1 and t2, respectively, for example, anisotropic dry etching By etching the photosensitive organic material pattern (160b of FIG. 6C) only in the direction of the substrate using the method), the photosensitive organic material pattern (160b of FIG. 6C) of the first region E1 is completely removed and the second region D1 is removed. The photosensitive organic material pattern (160b of FIG. 6c) may be etched to remain at a predetermined thickness.

At this time, the thickness of the photosensitive organic material pattern (160b of FIG. 6C) of the second region D1 remaining, that is, the thickness of the fourth insulating layer 160 may be substantially the first of the photosensitive organic material pattern (160b of FIG. 6C). It will correspond to the difference t2-t1 between the thickness (t1 in FIG. 6C) and the second thickness (t2 in FIG. 6C).

In addition, since the photosensitive organic material pattern 160b of FIG. 6C is etched only in the direction of the substrate, the edges of the fourth insulating layer 160 and the first electrode 158 obtained by etching may be formed to coincide with each other. When a lot of undercut is generated during the wet etching, the fourth insulating layer 160 may be formed to cover the edge of the first electrode 158.

In the future, in order to prevent contact between the edge of the first electrode 158 and the organic light emitting layer 164, as shown in FIG. 6D, a large amount of undercut occurs when the first electrode 158 is formed. Therefore, it is preferable that the edge of the first electrode 158 enters the lower portion of the fourth insulating layer 160.

In an embodiment of the present invention, after etching the conductive material layer (158a of FIG. 6B) using the photosensitive organic material pattern (160b of FIG. 6C) as an etching mask, the photosensitive organic material pattern (160b of FIG. 6C) is processed in a separate process. In some embodiments, the photosensitive organic material pattern 160b of FIG. 6c and the conductive material layer 158a of FIG. 6b are simultaneously etched to form a fourth insulating layer having the first electrode 158 and the opening 160c. 160).

As shown in FIG. 6E, the organic electroluminescent layer 164 that contacts the first electrode 158 through the opening of the fourth insulating layer 160 (160b of FIG. 6D) is formed on the upper portion of the fourth insulating layer 160. After forming in the pixel region, the second electrode 166 is formed on the entire surface of the substrate 100 on which the organic light emitting layer 164 is formed, thereby completing the organic light emitting diode D _EL .

In the organic light emitting diode D _EL , the fourth insulating layer 160 has an opening 160b covering an edge portion A of the first electrode 158 and simultaneously exposing a center portion of the first electrode 158. Since it is formed between the first electrode 158 and the organic electroluminescent layer 164, direct contact between the organic electroluminescent layer 164 and the edge A of the first electrode 158 is prevented and the organic electroluminescent layer 164 ) Is connected to the first electrode 158 through an opening 160b exposing the central portion of the first electrode 158. Accordingly, short-circuit defects due to direct contact between the edge portion A of the first electrode 158 and the organic light emitting layer 164 are prevented.

In addition, since the first electrode 158 and the fourth insulating layer 160 are formed through one mask process, the process time and manufacturing cost can be reduced.

The method for manufacturing an organic light emitting display device according to the present invention is not limited to the above embodiments, and various changes and modifications may be made by those skilled in the art to which the present invention pertains without departing from the spirit of the present invention. It is obvious that such changes and modifications are within the scope of the present invention and can be seen in the appended claims.

As described above, according to the method of manufacturing the organic light emitting display device according to the present invention, by using a mask having a transflective area, the central portion of the one electrode and the edge of the one electrode of the organic light emitting diode are covered. By forming an insulating layer having an opening to expose, short-circuit defects due to the direct contact between the organic light emitting layer and the edge of the one electrode can be prevented, and at the same time the process time and manufacturing cost by the process simplification Can reduce and improve the yield.

1 is a circuit diagram showing the configuration of one pixel region of a general active matrix organic electroluminescent device.

2 is a plan view of one pixel area of a conventional active matrix organic electroluminescent device.

FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 2. FIG.

4A to 4F are cross-sectional views illustrating a manufacturing process of an organic light emitting diode of a conventional organic light emitting diode.

5 is a cross-sectional view illustrating one pixel area of an organic light emitting display device according to an exemplary embodiment of the present invention.

6A to 6E are cross-sectional views illustrating a manufacturing process of an organic light emitting diode of an organic light emitting diode according to an embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100 substrate 130 buffer layer

132: semiconductor layer 138: gate electrode

150 source electrode 152 drain electrode

140: first insulating layer 144: second insulating layer

154: third insulating layer 158: first electrode

160: fourth insulating layer 164: organic light emitting layer

166: second electrode

Claims (10)

Forming a driving thin film transistor on the substrate; Forming a conductive material layer connected to the driving thin film transistor on the entire surface of the substrate above the thin film transistor; Forming a photosensitive organic material layer over the entire substrate above the conductive material layer; Exposing the photosensitive organic material layer by disposing a mask having a transmissive part, a blocking part, and a transflective part on the photosensitive organic material layer; Developing the photosensitive organic material layer to form a photosensitive organic material pattern comprising a first region corresponding to the transflective portion and having a first thickness and a second region corresponding to the blocking portion and having a second thickness greater than the first thickness. Forming; Forming a first electrode by etching the conductive material layer using the photosensitive organic material pattern as an etching mask; Etching the photosensitive organic material pattern to form an insulating layer having an opening corresponding to the first region; Forming an organic light emitting layer connected to the first electrode through the opening on the insulating layer; Forming a second electrode on an entire surface of the substrate above the organic light emitting layer Method for producing an organic electroluminescent device comprising a. The method of claim 1, The transmittance of the transflective portion of the mask is less than the transmittance of the transmissive portion of the mask and the manufacturing method of the organic light emitting device, characterized in that greater than the blocking portion of the mask. The method of claim 1, A method of manufacturing an organic light emitting display device, characterized in that a diffraction pattern is formed on the transflective portion of the mask. The method of claim 1, The opening is a method of manufacturing an organic light emitting display device, characterized in that to expose the central portion of the first electrode. The method of claim 1, And the insulating layer covers an edge portion of the first electrode. The method of claim 1, The conductive material layer is a method of manufacturing an organic light emitting device, characterized in that the etching by using the wet etching method. The method of claim 1, The photosensitive organic material pattern is a method of manufacturing an organic light emitting device, characterized in that the etching using a dry etching method. The method of claim 1, Forming a gate wiring on the substrate; Forming a data line crossing the gate line; Forming a power line crossing the gate line and spaced apart from the data line to define a subpixel area and to be connected to the driving thin film transistor; Forming a switching thin film transistor connected to the gate wiring, the data wiring, and the driving thin film transistor Method for manufacturing an organic light emitting device, characterized in that it further comprises. Forming a driving thin film transistor on the substrate; Forming a conductive material layer connected to the driving thin film transistor on the entire surface of the substrate above the thin film transistor; Forming a photosensitive organic material layer over the entire substrate above the conductive material layer; Exposing the photosensitive organic material layer by disposing a mask having a transmissive part, a blocking part, and a transflective part on the photosensitive organic material layer; Developing the photosensitive organic material layer to form a photosensitive organic material pattern comprising a first region corresponding to the transflective portion and having a first thickness and a second region corresponding to the blocking portion and having a second thickness greater than the first thickness. Forming; Simultaneously etching the photosensitive organic material pattern and the conductive material layer to form an insulating layer having an opening corresponding to the first region and a first electrode corresponding to the first and second regions; Forming an organic light emitting layer connected to the first electrode through the opening on the insulating layer; Forming a second electrode on an entire surface of the substrate above the organic light emitting layer Method for producing an organic electroluminescent device comprising a. The method of claim 9, The insulating layer covers an edge portion of the first electrode and the opening portion exposes a central portion of the first electrode.