KR20050053199A - Method for fabricating liquid crystal display device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a liquid crystal display device for forming a resist pattern having a double thickness in a simple process, the method comprising: forming a gate wiring and a gate electrode on a substrate; Laminating a semiconductor layer and a metal layer on the entire surface including the gate insulating film, printing a resist on the metal layer, pressing the resist on the channel region of the semiconductor layer to lower the step difference; Forming a data line perpendicular to the gate line and a source / drain electrode branched from the data line by collectively etching the semiconductor layer and the metal layer exposed between the resists, and etching the resist to a portion having a low level difference Removing the metal layer corresponding to the channel region by removing; And forming a passivation layer on the entire surface including the data line, and forming a pixel electrode contacting the drain electrode on the passivation layer.

Description

Method for manufacturing liquid crystal display device {Method For Fabricating Liquid Crystal Display Device}

The present invention relates to a liquid crystal display device (LCD), and more particularly to a liquid crystal display device for improving the image quality.

Recently, the liquid crystal display device, one of the flat panel display devices that are attracting attention, is an element that changes the optical anisotropy by applying an electric field to a liquid crystal that combines the liquidity and the optical properties of the crystal, which is applied to a conventional cathode ray tube. Compared with its low power consumption, small volume, large size, and high definition, it is widely used.

The LCD has a structure in which a color filter substrate as an upper substrate and a thin film transistor (TFT) substrate as a lower substrate are disposed to face each other, and a liquid crystal having dielectric anisotropy is formed therebetween. By switching the TFTs attached to the hundreds of thousands of pixels through the pixel selection address wiring, the voltage is applied to the corresponding pixels, and is driven in such a manner that the voltage charged to the corresponding pixels is maintained by the capacitor until the next address. do.

 As described above, in order to drive the device, various patterns such as transistors and capacitors are required, and photo-lithography is commonly used to form such a pattern.

Photolithography technology uses a principle that changes a property by causing a chemical reaction when a specific photo-resist receives light, specifically, the step of depositing a film on a substrate and applying a photoresist thereon, Selectively exposing the photoresist using ultraviolet wavelengths, developing the exposed photoresist, etching the film using the developed photoresist as a mask, and The process is complicated and cumbersome because a series of complicated processes consisting of peeling the resist must be performed.

In addition, since various equipments must be provided, the area occupied by the equipment is increased, and process time and process costs are also consumed.

Instead of photolithography, a resist printing technique is used to simplify the process of forming a resist pattern, thereby reducing process time and cost.

The resist printing technique is a process of transferring a resist developed on a printing roll outer circumferential surface onto a film, and etching the film to form a pattern using the transferred resist as a mask.

However, the resist printing technique has a weakness in resolution and alignment accuracy due to variation in film thickness of about 10%, but pattern formation of a liquid crystal display device having a less dimensional dimension because of excellent productivity. It is used for.

Hereinafter, a liquid crystal display device according to the related art will be described with reference to the accompanying drawings.

1 is a plan view of a general liquid crystal display device, FIGS. 2A to 2E are cross-sectional views illustrating a photo etching process, and FIGS. 3A to 3D are cross-sectional views illustrating a photo etching process using a diffraction exposure technique.

4A to 4E are cross-sectional views of a process to which a resist printing technique is applied.

As described above, in the liquid crystal display device, a TFT substrate and a color filter substrate are opposed to each other with a liquid crystal layer interposed therebetween. As illustrated in FIG. 1, a plurality of gate lines 12 for transmitting a scanning signal to the TFT substrate are provided. ), A thin film transistor formed at an intersection of the gate line 12 and the data line 15 and the data line 15 for transmitting a video signal while defining a sub-pixel by perpendicularly crossing the gate line 12. A TFT and a pixel electrode 17 electrically connected to the thin film transistor TFT.

In this case, the thin film transistor includes a gate electrode 12a branched from the gate line 12, a semiconductor layer 14 formed on the gate electrode 12a, and the data line on the semiconductor layer 14. And a drain electrode 15b spaced apart from the source electrode 15a on the semiconductor layer 14.

The various patterns can be formed by various techniques such as photolithography, printing, etc. First, the process of forming by photolithography is as follows.

First, as shown in FIG. 2A, a film layer 51 is formed on a substrate 50, and UV curable is formed on the upper surface of the film layer 51 by a spin method, a roll coating method, or the like. The photoresist 52, which is an ultraviolet curable resin, is uniformly applied. At this time, the resist used shall have photosensitive characteristics.

Next, as shown in FIG. 2B, a pattern formed on the photomask 53 is formed by covering the photomask 53 on the photoresist 52 and irradiating light rays, generally UV or x-rays. ) Is exposed.

Subsequently, as shown in Fig. 2C, the exposed photoresist 52 is developed to remove the photoresist 52 of the portion to which light is irradiated.

Subsequently, exposing the photoresist to high temperatures, implanting ions, or curing with deep UV radiation, greatly increases the solvent resistance of the developed photoresist portion.

As described above, the photoresist from which the exposed part is removed is called a positive photoresist, and the photoresist from which the unexposed part is removed is called a negative photoresist.

Next, as shown in FIG. 2D, the exposed film layer 52 is etched using the patterned photoresist 52 as a mask and patterned into a desired shape. Here, the etching process is a dry etching method using a plasma and a wet etching method using a chemical solution.

Subsequently, as shown in FIG. 2E, stripping the photoresist 52 remaining on the substrate 50 completely patterns the film layer 51. At this time, the stripping process of the photoresist is performed for 120 seconds at a temperature of 70 ℃.

At this time, the photoresist stripper uses NMP, MEA, BOG, carbitol, additive-based organic chemicals or IPA, etc., and cured photoresist and polymer photoresist residue while reducing corrosion of the film to be patterned. Is removed from the substrate.

Here, the diffraction exposure technique is applied if it is desired to form the film layer in double thickness.

That is, as shown in FIG. 3A, a film layer 51 is formed on the substrate 50, and a photo resist 52 is uniformly applied to the upper surface of the film layer 51.

Next, as shown in FIG. 3B, a halftone mask 150 or a slit mask is placed on the photoresist 52 and exposed by irradiating light rays, generally UV or x-rays.

The half-tone mask 150 is divided into a light transmitting area, a light blocking area, and a transflective area. That is, the light blocking layer 151 of the metal material is formed in the light blocking area on the transparent substrate 153, the translucent layer 152 is formed in the transflective area, and the light blocking layer 151 or the translucent layer 152 is formed in the transmissive area. It doesn't work.

In other words, the light transmission region has a light transmittance of 100%, the light shielding region has a light shielding layer 151 formed therein, and has a light transmittance of 0%. It is more than 100%.

When the resist 132 diffracted and exposed by the half-tone mask 150 is developed, as shown in FIG. 3C, all of the resists 132 corresponding to the transmissive region are removed and the resist corresponding to the light shielding region is removed. 132 remains as it is, the resist 132 corresponding to the transflective region is removed to a predetermined thickness. In this case, a process of etching the film 101 by ashing the pattern of the resist 132 may also be required.

Subsequently, as shown in FIG. 3D, when the film 101 on the substrate 100 is etched using the resist 132 pattern as a mask, a film 101 pattern having a double thickness is formed.

Hereinafter, a method of forming a pattern by a printing technique will be described.

In general, a gravure offset method is used to print a resist onto a substrate, and the gravure offset method includes filling the groove in the groove of the cliché, applying the resist filled in the groove to the roller, A step of transferring the buried resist onto the substrate is performed.

Since gravure printing transfers a resist onto a substrate using a transfer roll, a pattern can be formed by one transfer even in the case of a display device having a large area by using a transfer roll corresponding to the area of a desired display element. .

First, as illustrated in FIG. 4A, a cliché 90 in which a recess groove 92 is formed at a specific position corresponding to a pattern to be formed on a substrate is prepared. Thereafter, the resist 132 is applied to the inner surface of the cliché 90, and the concave of the cliché 90 is pushed in one direction in a state where the cuff or doctor blade 98 is in contact with the cliché 90. The resist 132 is filled in the groove 92. At this time, the resist 132 remaining on the surface of the cliché 90 is removed. At this time, the resist used may not have photo characteristics.

Next, as shown in FIG. 4B, the printing roll 99 in which a blanket 199 is wound around its outer circumferential surface is rotated and advanced in one direction in contact with the inner surface of the cliché 90. At this time, the resist 132 filled in the concave groove 92 of the cliché 90 is transferred to the blanket 199 of the printing roll 99.

Thereafter, as shown in FIG. 4C, a transparent glass substrate, a plastic substrate, or an opaque insulating substrate is prepared to form a film layer 101 of a specific material, and then the printing roll 99 is rotated in one direction on the surface thereof. The resist 132 is then retransmitted on the substrate 100 on which the film layer 101 is formed.

Subsequently, the transferred resist 132 is cured to complete the resist 132 pattern. In this way, the desired resist pattern can be formed over the entire substrate 100 of the display device by one rotation of the printing roll 99, which is more useful for a large area display device.

Subsequently, as shown in FIG. 4D, when the film layer 101 on the substrate 100 is etched using the resist 132 pattern as a mask, a pattern is formed.

Thereafter, the resist 132 formed on the film layer 101 is separated from the film using a stripper.

As such, by forming a resist pattern using a printing technique, the photolithography process may be patterned more easily.

However, the manufacturing method of the liquid crystal display device according to the prior art has the following problems.

That is, the photoetching technique is cumbersome and complicated, and the resist printing technique is simpler than that. However, when forming a resist pattern having a double thickness, the resist has to be printed twice.

The present invention has been made to solve the above problems, and an object thereof is to provide a method of manufacturing a liquid crystal display device which simplifies the process by easily forming a resist pattern having a double thickness.

Method of manufacturing a liquid crystal display device according to the present invention for achieving the above object comprises the steps of forming a gate wiring and a gate electrode on a substrate, forming a gate insulating film on the entire surface including the gate wiring, and the gate Stacking a semiconductor layer and a metal layer on the entire surface including the insulating layer, printing a resist on the metal layer, pressing the resist on the channel region of the semiconductor layer to lower the step, and exposing between the resists Collectively etching the semiconductor layer and the metal layer to form a data line perpendicular to the gate line and a source / drain electrode branched from the data line; forming a protective film on the entire surface including the data line; Forming a pixel electrode on the drain electrode on the substrate It characterized by comprising.

That is, in order to collectively form the semiconductor layer and the source / drain electrodes, a resist pattern having a double thickness is required. A process of simplifying the process by forming a resist pattern having a double thickness by applying a printing technique using a pressing plate or a pressure roller, etc. It is characterized by.

According to still another aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, including forming a gate wiring and a gate electrode on a substrate, forming a gate insulating film on the entire surface including the gate wiring, and forming the gate insulating film. Stacking a semiconductor layer and a metal layer on the entire surface, coating a resist on the metal layer, and pressing a mold frame having a double stepped concave on the resist to form a resist pattern having a double step Removing the mold frame, and collectively etching the semiconductor layer and the metal layer exposed between the resists to form a data line perpendicular to the gate line and a source / drain electrode branched from the data line; Essing the resist removes the low step and corresponds to the channel region Removing the metal layer, removing the portion having a low level by ashing the resist, removing the metal layer corresponding to the channel region, forming a protective film on the entire surface including the data line, and forming a protective film on the protective film. And forming a pixel electrode in contact with the drain electrode.

That is, in forming the semiconductor layer and the source / drain electrodes collectively, a molding pattern used as a mold frame is applied to form a resist pattern having a double thickness.

In this way, the resist pattern having a double thickness can be formed by a simple procedure, thereby improving process productivity.

Hereinafter, a method of manufacturing a liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.

Hereinafter, the description regarding the manufacturing method of the thin film array substrate of a liquid crystal display element is mainly described.

First embodiment

5A to 5G are process cross-sectional views of a thin film array substrate according to the present invention, and FIGS. 6A to 6C are process cross-sectional views of forming a resist pattern according to an embodiment of the present invention, and FIGS. 7A to 7C are views of the present invention. A cross-sectional view of a process of forming a resist pattern according to another embodiment.

First, as shown in FIG. 5A, copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), and molybdenum (Mo) having low specific resistance to prevent signal delay on the thin film array substrate 311. ), A first low-resistance metal layer 322 such as chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum-tungsten (MoW) is deposited by a sputtering method, and a gravure offset method is applied to a predetermined portion thereon. Printing technique is applied to print the first resist pattern 351.

Thereafter, the first low resistance metal layer 322 exposed between the first resist patterns 351 is patterned to form a plurality of gate wires (not shown) and a gate electrode 312a branched from the gate wires. .

Next, as illustrated in FIG. 5B, an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx) is generally disposed on the entire surface including the gate electrode 312a, and plasma enhanced chemical vapor deposition (PECVD) is performed. The gate insulating film 313 is formed by vapor deposition by a chemical vapor depostion method.

The semiconductor layer 314 and the ohmic contact layer 314a are formed by stacking amorphous silicon (a-Si: H) and n + a-Si doped with impurities on the gate insulating layer 313. do.

Subsequently, copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), chromium (Cr), titanium (Ti), and tantalum having a low specific resistance are formed on the ohmic contact layer 314a. After depositing the second low-resistance metal layer 325 such as Ta and molybdenum-tungsten (MoW), the second resist pattern 352 is printed by applying a printing technique such as a gravure offset method to a predetermined portion thereon. do. The second resist pattern 352 is printed to be formed in a region where a thin film transistor and a data line are to be formed.

Subsequently, a predetermined portion of the second resist pattern 352 is pressed with a pressing plate and a pressure roller to form the second resist pattern 352 in a double thickness. The region corresponding to the relatively thin thickness becomes the channel region of the semiconductor layer in a later process.

Specifically, the technique using the pressing plate proceeds in the order shown in FIGS. 6A to 6C. First, as shown in FIG. 6A, a printing technique such as a gravure offset method is performed on the substrate 400 on which the film to be patterned is formed. After the resist pattern 432 is printed, the recess pattern is formed on the resist pattern 432 by pressing the pressing plate 440 at a predetermined pressure on the resist pattern 432. Thereafter, as shown in FIG. 6B, when the pressing plate 440 pressing the resist pattern 432 is removed, as shown in FIG. 6C, the resist pattern 432 has a double thickness. Subsequently, when the resist pattern 432 is hard-baked and the film on the substrate 400 is etched in the form of the resist pattern 432, a pattern having a double thickness is formed.

At this time, before pressing the resist pattern 432 with the pressing plate 440, the flowable resist pattern 432 may be soft-baked.

The press plate 440 may be made of various materials such as metal, rubber, and the like, and have a protrusion to correspond to a region corresponding to a thin thickness of a resist pattern having a double thickness.

Meanwhile, the technique using the pressure ruler proceeds in the order shown in FIGS. 7A to 7C. First, as shown in FIG. 7A, a printing technique such as a gravure offset method is applied to a substrate 500 on which a film to be patterned is formed. After the resist pattern 532 is printed, the concave portion is formed in the resist pattern 532 by rotating and advancing the pressing roller 540 at a predetermined pressure on the resist pattern 532. Subsequently, as shown in FIG. 7B, when the pressing roller 540 is continuously rotated and advanced in one direction to form a recess in a predetermined portion of the resist pattern 532 on the front surface of the substrate 500, as shown in FIG. 7C. Likewise, resist pattern 532 has a double thickness. Subsequently, when the resist pattern 532 is hard-baked and the film on the substrate 500 is etched in the form of the resist pattern 532, a pattern having a double thickness is formed.

At this time, before rotating the pressure roller 540 to the resist pattern 532, the flowable resist pattern may be soft-baked.

The pressure roller 540 may be made of various materials such as metal, rubber, and the like, and manufactured to have a constant load. And, it is manufactured to have a protrusion so as to correspond to a region corresponding to the thin thickness of the resist pattern having a double thickness.

After forming the second resist pattern 352 having a double thickness by the above method, as shown in FIG. 5C, the second low resistance metal layer 325 and ohmic exposed between the second resist patterns 352 are exposed. The contact layer 514a and the semiconductor layer 314 are collectively etched to form a data line 315 crossing the gate line 312 and at the same time, the data line 315 is formed on the gate electrode 312a. Form a regular pattern that diverges.

Subsequently, the second resist pattern 352 is ashed with O ₂ to lower the step. That is, all portions corresponding to the thin thickness of the second resist pattern 352 having the double thickness are removed, and portions corresponding to the thick thickness are made thinner. Therefore, the portion corresponding to the channel region of the semiconductor layer is opened.

Subsequently, as shown in FIG. 5D, the second low resistance metal layer 352 is etched using the second resist pattern 352 having the channel region exposed thereon as a mask, and the source / top portion of the semiconductor layer 314 is etched. Drain electrodes 315a and 315b are formed.

At this time, when the source / drain electrodes 315a and 315b are etched, the ohmic contact layer 314a is overetched and simultaneously patterned.

Subsequently, after the remaining second resist pattern 352 is completely removed, as shown in FIG. 5E, an organic insulating material such as BCB (Benzocyclobutene) or acrylic resin (acryl resin) is formed on the entire surface including the data line 315. The protective film 316 is formed by coating or by depositing an inorganic insulating material such as SiNx or SiOx.

Next, a third resist pattern 353 is printed by applying a printing technique such as a gravure offset method to a predetermined portion on the passivation layer 316. A contact hole 320 is formed in a predetermined portion of the third resist pattern 353, and the contact hole 320 is used to contact the drain electrode 315b and the pixel electrode 317 of the thin film transistor in a later process. will be. The protective layer 316 exposed between the contact holes 320 is etched to expose a predetermined portion of the drain electrode 315b.

Next, after stripping the third resist pattern 353, as shown in FIG. 5F, a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO), is formed on the entire surface including the passivation layer 316. After the film is deposited by the sputtering method, the fourth resist pattern 354 is printed by applying a printing technique such as a gravure offset method to a predetermined portion thereon.

Lastly, as illustrated in FIG. 5G, the transparent conductive film exposed between the fourth resist patterns 354 is etched to form the pixel electrode 317 in the pixel region so as to contact the drain electrode 315b.

This completes the thin film array substrate by a printing technique. As such, when a resist pattern having a double thickness is required to collectively form the semiconductor layer and the source / drain electrodes, the process can be easily performed by applying a printing technique using a pressing plate or a pressure roller.

For reference, the first, third, and fourth resist patterns 351, 353, and 354 may be formed by a photolithography technique without applying a printing technique by a gravure offset method or the like.

Although not shown, the thin film array substrate having the structure has a liquid crystal layer bonded to the opposite substrate and disposed between the two substrates. The opposite substrate includes a black matrix for preventing light leakage and an R, G between the black matrix. And a color filter layer in which B color resists are formed in a predetermined order, an overcoat layer for protecting the color filter layer on the color filter layer and planarizing the surface of the color filter layer, and a pixel electrode formed on the overcoat layer. In addition, a common electrode for forming an electric field is formed.

Second embodiment

8A to 8H are cross-sectional views of a thin film array substrate according to still another embodiment of the present invention.

The second embodiment of the present invention is fabricated in a similar manner to the first embodiment, and is characterized by forming a resist pattern of double thickness using a mold flame to collectively form the semiconductor layer and the source / drain electrodes. .

First, as shown in FIG. 8A, copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), and molybdenum (Mo) having low specific resistance to prevent signal delay on the thin film array substrate 611. ), A first low-resistance metal layer 622 such as chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum-tungsten (MoW) is deposited by a sputtering method, and a gravure offset method is applied to a predetermined portion thereon. Printing technique is applied to print the first resist pattern 651.

Thereafter, the first low resistance metal layer 622 exposed between the first resist patterns 651 is patterned to form a plurality of gate wires (not shown) and a gate electrode 612a branched from the gate wires. .

Next, as shown in FIG. 8B, an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx) is generally deposited on the entire surface including the gate electrode 612a by using a plasma enhanced chemical vapor deposition method. An insulating film 613 is formed.

The semiconductor layer 614 and the ohmic contact layer 614a are formed by stacking amorphous silicon (a-Si: H) and n + a-Si doped with impurities on the gate insulating layer 613. do.

Subsequently, copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), chromium (Cr), titanium (Ti), and tantalum having a low specific resistance are formed on the ohmic contact layer 614a. After depositing a second low resistance metal layer 625 such as (Ta) and molybdenum-tungsten (MoW), a flowable resist is spin-coated on the upper surface of the second low resistance metal layer 625.

Next, as shown in FIG. 8C, the flexible rubber mold frame 640 is lightly covered so that a flowable resist flows into and fills the concave shape of the mold frame 640. The mold frame 640 is formed to have a concave portion in the shape of a resist pattern.

Subsequently, heat is applied to the resist while the mold frame 640 is covered to be temporarily cured so as to have a hard solid to some extent to obtain a second resist pattern 652, and then the mold frame 640 is subjected to the second resist. Remove from pattern 652. After removing the mold frame, the resist is completely cured.

As a result, as shown in FIG. 8D, the second resist pattern 652 is positioned in the region where the thin film transistor and the data line are to be formed, and has a double thickness in the region where the thin film transistor is to be formed. The portion corresponding to the thin thickness of the second resist pattern 652 becomes the channel region of the semiconductor layer in a later step.

Next, as shown in FIG. 8E, the second low resistance metal layer 625, the ohmic contact layer 614a, and the semiconductor layer 614 exposed between the second resist patterns 652 are collectively etched to form the gate wirings. A data line 615 intersecting with 612 is formed, and at the same time, a predetermined pattern branched from the data line 615 is formed on the gate electrode 612a.

Subsequently, the second resist pattern 652 is ashed with O ₂ to lower the step. At this time, all portions corresponding to the thin thickness of the second resist pattern 652 are removed, and the portions corresponding to the thick thickness become thinner. That is, a portion corresponding to the channel region of the semiconductor layer is opened.

Subsequently, the second low resistance metal layer 625 is etched using the second resist pattern 652 having the channel region exposed thereon, so that source / drain electrodes 615a and 615b are formed on the semiconductor layer 614. Form.

At this time, when the source / drain electrodes 615a and 615b are etched, the ohmic contact layer 614a is overetched and simultaneously patterned.

Subsequently, after the remaining second resist pattern 652 is completely removed, as shown in FIG. 8F, an organic insulating material such as benzocyclobutene (BCB) or acryl resin, etc., is disposed on the entire surface including the data line 615. Is applied or an inorganic insulating material such as SiNx, SiOx is deposited to form a protective film 616, and a third resist pattern 653 is printed by applying a printing technique such as a gravure offset method to a predetermined portion thereon. A contact hole 620 is formed in a predetermined portion of the third resist pattern 653, and the contact hole 620 is configured to contact the drain electrode 615b and the pixel electrode 617 of the thin film transistor in a later process. will be. The protective layer 616 exposed between the contact holes 620 is etched to expose a predetermined portion of the drain electrode 615b.

Next, after stripping the third resist pattern 653, a transparent conductive film such as indium tin oxide (ITO) or indium zinc oxide (IZO), etc., is formed on the entire surface including the passivation layer 616 as shown in FIG. 8G. After depositing 627 by a sputtering method, a fourth resist pattern 654 is printed by applying a printing technique such as a gravure offset method to a predetermined portion thereon.

Finally, as shown in FIG. 8H, the transparent conductive film exposed between the fourth resist patterns 654 is etched to form a pixel electrode 617 contacting the drain electrode 615b.

This completes the thin film array substrate by a printing technique. As such, when a resist pattern having a double thickness is required to collectively form the semiconductor layer and the source / drain electrodes, the process can be easily performed by applying a molding method used as a mold frame.

For reference, the first, third, and fourth resist patterns 651, 653, and 654 may be formed by a photolithography technique without applying a printing technique by a gravure offset method or the like.

Although not shown, the thin film array substrate having the structure has a liquid crystal layer bonded to the opposite substrate and disposed between the two substrates. The opposite substrate includes a black matrix for preventing light leakage and an R, G between the black matrix. And a color filter layer in which B color resists are formed in a predetermined order, an overcoat layer for protecting the color filter layer on the color filter layer and planarizing the surface of the color filter layer, and a pixel electrode formed on the overcoat layer. In addition, a common electrode for forming an electric field is formed.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge.

The manufacturing method of the liquid crystal display device according to the present invention as described above has the following effects.

First, in order to collectively form the semiconductor layer and the source / drain electrodes, when a resist pattern having a double thickness is required, the process may be easily performed by applying a printing technique using a pressing plate or a pressure roller.

Second, by applying the molding method used as a mold frame it is possible to easily perform the process by forming a resist pattern of a double thickness.

In this way, the resist pattern having a double thickness can be formed by a simple procedure, thereby improving process productivity.

1 is a plan view of a general liquid crystal display device.

2A to 2E are cross-sectional views illustrating a photo etching process.

3A to 3D are cross-sectional views illustrating a photolithography process using a diffraction exposure technique.

4A to 4E are cross-sectional views of a process to which a resist printing technique is applied.

5A to 5G are cross-sectional views of a thin film array substrate according to the present invention.

6A to 6C are cross-sectional views of a process of forming a resist pattern according to an embodiment of the present invention.

7A to 7C are cross-sectional views of a process of forming a resist pattern according to another embodiment of the present invention.

8A to 8H are cross-sectional views of a thin film array substrate according to another embodiment of the present invention.

* Explanation of symbols on the main parts of the drawings

400, 500, 600: substrate on which a film is formed

432, 532, 632: resist pattern

440: pressure plate 540: pressure roller

611 thin film array substrate 612a gate electrode

613: gate insulating film 614: semiconductor layer

615: data wiring 615a, 615b: source / drain electrode

616: protective film 617: pixel electrode

620: contact holes 622, 625: first and second low resistance metal layers

640: Mold Frame

651, 652, 653, 654: first, second, third, fourth resist

Claims (9)

Forming a gate wiring and a gate electrode on the substrate; Forming a gate insulating film on the entire surface including the gate wiring; Stacking a semiconductor layer and a metal layer on the entire surface including the gate insulating layer; Printing a resist on the metal layer; Pressing the resist on the channel region of the semiconductor layer to lower the step; Collectively etching the semiconductor layer and the metal layer exposed between the resists to form a data line perpendicular to the gate line and a source / drain electrode branched from the data line; Removing the metal layer corresponding to the channel region by removing the low stepped portion by ashing the resist; Forming a protective film on the entire surface including the data line; And forming a pixel electrode on the passivation layer, the pixel electrode contacting the drain electrode. The method of manufacturing a liquid crystal display device according to claim 1, wherein a pressing plate or a pressing roller is used when pressing the resist. The method of claim 1, The printing of the resist may include Filling the resist into the concave groove of the cliché, Transferring the resist filled in the recess into the printing roll; And retransferring the resist transferred to the printing roll onto a substrate. The method of claim 1, wherein a thin film transistor including the gate electrode, the gate insulating film, the semiconductor layer, and the source / drain electrode is formed at an intersection point of the gate line and the data line. Forming a gate wiring and a gate electrode on the substrate; Forming a gate insulating film on the entire surface including the gate wiring; Stacking a semiconductor layer and a metal layer on the entire surface including the gate insulating layer; Coating a resist on the metal layer; Pressing a mold frame having a concave portion of a double step to the resist to form a resist pattern having a double step; Removing the mold frame, and collectively etching the semiconductor layer and the metal layer exposed between the resists to form a data line perpendicular to the gate line and a source / drain electrode branched from the data line; Ashing the resist to remove a portion having a low level and removing a metal layer corresponding to a channel region; Forming a protective film on the entire surface including the data line; And forming a pixel electrode on the passivation layer, the pixel electrode contacting the drain electrode. The method of claim 5, wherein the mold frame is made of rubber. The method of claim 5, wherein the mold frame has a concave portion having a protrusion at a position corresponding to the channel region of the semiconductor layer. 6. The method of claim 5, further comprising temporarily curing the resist while the mold frame is covered. 6. The method of claim 5, further comprising completely curing the resist after removing the mold frame.