KR20050049857A - Matrix type display panel - Google Patents

Abstract

A matrix display panel is disclosed. The disclosed panel includes a region in which a first element of each light emitting element, a diode, and a capacitor is formed over the entire pixel area, and the remaining two elements, the second and third elements, are divided on one surface of the first element. It has a structure formed in each. Such a display panel has an optimal component arrangement structure, thereby having high power efficiency and high quality and reliability. In addition, the display panel having such a characteristic laminated structure is easy to manufacture and high yield.

Description

Matrix type display panel

The present invention relates to a mattress-type display panel having a light emitting device that can improve the power efficiency, quality and reliability of the display panel.

Recently, as the size of a display device increases, the demand for a flat display device having less space is increasing. As one of the flat panel display devices, the technology of the organic light emitting device has been rapidly developed, and several new products have already been announced.

The organic light emitting diode has an advantage that it can be driven at a lower voltage (5 to 10V) than a plasma display panel (PDP) or an inorganic light emitting diode display. Such organic light emitting diodes have excellent characteristics such as wide viewing angle, high response speed, high contrast ratio, and the like. Therefore, the organic light emitting diodes can be used as pixels of graphic displays, television image displays, or surface light sources. Can be used. Furthermore, unlike the liquid crystal display (LCD), the organic light emitting device is not only an active light emitting device that does not require a back light, but also has low power consumption, and thus is suitable as a next-generation flat panel display.

Thin Film Transistors (TFTs) made of Low Temperature Poly Silicon (LTPS) are used as switching devices to drive organic light emitting devices. The thin film transistor is widely used as an element for driving an organic light emitting element of an active matrix display formed integrally on an insulating substrate.

U.S. Patent 5,550,066 discloses an active matrix organic light emitting device using a thin film transistor. The technology of forming a thin film transistor on a substrate is currently making remarkable progress, and through this technique, an organic light emitting element, which is a major element of each pixel of an active matrix display panel, and a thin film transistor driving the thin film transistor are integrated on the same substrate. By doing so, it is possible to reduce the size and manufacturing cost of the display panel.

However, the method of driving the organic light emitting device using the thin film transistor is not only influenced by the silicon crystal system constituting the thin film transistor, but also the current-voltage (Id-Vg) characteristics in the saturation region show considerable variation for each thin film transistor. There is a tendency. Therefore, in the display panel using the thin film transistor, even if the voltage level of the data signal input to each cell is uniform, the amount of y-light emitted from each organic light emitting diode is not uniform, thereby precisely adjusting the brightness of the corresponding cell. Difficulties follow

In addition, since the organic light emitting device is driven in a manner that controls the current flowing to the device, it is necessary to use several thin film transistors as disclosed in US Pat. No. 5,550,066. This has a problem of performing a complicated manufacturing process by using a plurality of thin film transistors.

In the organic light emitting device, the linearity of light emitted in proportion to the current increase and decrease in the low current range is maintained, but light of low brightness that does not correspond to the applied current is increased due to an increase in current loss due to heat or the like for a current above a certain level. Emission phenomenon, that is, non-linear emission, occurs. As such, the decrease in efficiency at high currents lowers the reliability of the display device requiring high brightness.

In order to solve this problem, a matrix-type display panel having a new structure has been proposed by International Patent Application No. PCT / KR03 / 00208. The display panel has a structure in which the organic light emitting element is switched by one diode and a capacitor.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and an object thereof is to provide a light emitting driving device that simplifies the manufacturing process by simplifying electrical devices by driving a light emitting device without using a thin film transistor as a driving method.

According to the present invention, there is provided a light emitting device including a first pole and a second pole having a polarity opposite to that of one pole in each unit pixel region provided near an intersection of a data signal line and a control signal line arranged in a matrix; A diode having a first pole connected to the data electrode and a second pole opposite to the first pole and connected to the first pole of the light emitting element; And a capacitor having a first terminal connected to a contact point of a first pole of a light emitting element and a second pole of a diode, and a second terminal to which the control electrode is applied.

One of the first elements of the light emitting element, the diode, and the capacitor is formed over the entire area of the pixel region, and the other two elements, the second and third elements, are formed to be adjacent to each other on one surface of the first element. A matrix display panel is provided.

According to an embodiment of the present invention, the first element is a capacitor, and the second and third elements formed on one surface thereof are a light emitting element and a diode. According to a more preferred embodiment here the light emitting device is extended to the region where the diode is formed.

According to another embodiment of the present invention, the first element is a diode, and the second and third elements formed on one surface thereof are a light emitting element and a capacitor.

According to another embodiment of the present invention, the first element is a light emitting element, and the second and third elements formed on one surface thereof are a diode and a capacitor.

According to a more preferred embodiment, the first pole of the diode and the first pole of the light emitting element are the anode, the second pole of the diode and the second pole of the light emitting element are cathodes.

According to the second type of display panel of the present invention,

A substrate;

A control signal line on the substrate, the control signal lines being arranged side by side in a first direction;

A plurality of data signal lines arranged on the substrate in parallel with each other in a second direction perpendicular to the first direction;

A capacitor and a diode provided in a first layer of a unit pixel area defined at an intersection of the control signal line and the data signal line;

A light emitting element provided in a second layer of a unit pixel area defined at an intersection of the control signal line and the data signal line; And

Provided is a matrix display panel provided between the first layer and the second electrode and shared by the capacitor, diode, and light emitting element.

According to the third type of display panel of the present invention,

A substrate;

A control signal line on the substrate, the control signal lines being arranged side by side in a first direction;

A plurality of data signal lines arranged on the substrate in parallel with each other in a second direction perpendicular to the first direction;

A capacitor provided in a first layer of a unit pixel area defined at an intersection of the control signal line and the data signal line;

A light emitting element and a diode provided in a second layer of a unit pixel area defined at an intersection of the control signal line and the data signal line; And

Provided is a matrix display panel provided between the first layer and the second electrode and shared by the capacitor, diode, and light emitting element.

Hereinafter, embodiments of the matrix display panel according to the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic equivalent circuit diagram of a matrix display panel according to the present invention, and FIG. 2 is a circuit diagram showing a light emitting structure for each pixel.

As shown in Fig. 1, the data signal lines Y1 to Yn and the control signal lines X1 to Xm are arranged in a matrix. A pixel region is defined at each intersection of the data signal lines Y1 to Yn and the control signal lines X1 to Xm, and the pixel by the diode D, the capacitor C and the light emitting element E is defined in this portion. It is prepared. The light emitting device (E) refers to an organic light emitting device as a current control device having an electrical direction. Such matrix type signal line arrangements are generally well known, and therefore the known structures and arrangements not described below are equivalent.

In one embodiment of the matrix type display panel according to the present invention, referring to FIG. 2A showing an equivalent circuit of a unit pixel, a diode D and a light emitting device E having a circuit electrical direction are directly connected in a forward direction. The capacitor C is connected to these contacts P. As shown in FIG. The diode D is connected to the data signal line, and the capacitor C is connected to the control signal line. The light emitting device E is commonly grounded. In this structure, the capacitor (C), the diode (D), and the light emitting device (E) have a sandwich structure in which electrodes are provided on both sides of one functional layer, and for convenience, the electrodes for them are first and second electrodes. This is defined. The diode D and the light emitting device E have an electrical orientation, and therefore, the first and second electrodes will correspond to the anode and the cathode, respectively. For example, if the first pole is the cathode, the second pole is the anode, and if the first pole is the anode, then the second pole is the cathode.

FIG. 2B illustrates a pixel in which the polarities of the diodes D and the light emitting devices E of the pixel illustrated in FIG. 2A are changed as another embodiment of the matrix display panel according to the present invention.

One of the features of the present invention is that capacitor (C), diode (D), light emitting element (E) and the like share one electrode, and according to this feature the electrode shared by these elements is a bipolar electrode. If the shared electrode has a function as a cathode for a diode, it has a function as an anode for a light emitting element. The capacitor does not have electrical directivity, and thus only uses a shared electrode as the first terminal as an electrical connection means between the light emitting element E and the diode D. Therefore, an electrode that is circuitally shared by the elements comprises a contact in circuit.

In this structure, when the diode D is turned on and the light emitting device E is turned off, the charge corresponding to the difference between the voltage level of the control signal and the voltage level of the data signal is charged with the capacitor C, and the diode D Is turned off and the light emitting device E is turned on, the charges charged by the capacitor C are discharged to the light emitting device E. Specific and various methods for the on-off operation of such pixels can be well understood through PCT / KR03 / 00208, which discloses the technical background of the present invention.

The present invention relates to a specific and substantial structural design of a pixel having such an operation. 3 and 4 show the vertical layout of the pixel according to the four embodiments in which the arrangement of the diode D, the capacitor C, and the light emitting device E is different according to the present invention.

Referring to the pixel according to the first embodiment of the present invention illustrated in FIG. 3A, a capacitor C is formed over the entire unit pixel region on the substrate 10 to form a first layer. The above light emitting device (E) and diode (D) are formed adjacent to the same plane to form a second layer. This first embodiment may be formed of a material having a lower dielectric constant than the third and fourth embodiments together with the second embodiment to be described later. However, since the light emitting device E that substantially represents the pixel is provided in a portion of the capacitor C of the unit pixel region, the aspect ratio is lower than that of the third and fourth embodiments described below.

The pixel according to the second embodiment of the present invention illustrated in FIG. 3B has a structure in which the first layer and the second layer of the pixel illustrated in FIG. 3A are inverted (inverted). That is, the light emitting element E and the diode D are formed in each divided area of the unit pixel region on the substrate 10 to form the first layer, and the capacitor C formed over the unit pixel region is formed thereon. The second layer is formed. Therefore, the first layer and the second layer mean other layers laminated on the substrate, and the stacking order is not determined, and the order is optional.

3A and 3B, a pixel C having a single layer is formed over a unit pixel region, and the light emitting device E and the capacitor C are formed in a unit pixel region. It has a structure provided in each divided area, and has a structural feature of forming a stack by two layers together with the layer formed by the capacitor (C).

On the other hand, the pixel of the type shown in Figure 3a may be modified in the form of Figure 3c to enlarge the light emitting area.

Referring to FIG. 3C, which is a modification of the pixel illustrated in FIG. 3A, the light emitting device E is extended over the diode D. FIG. As described above, the pixel is provided in a region in which the light emitting device E and the diode D are separated from the unit pixel area, and in this case, the light emitting device E extends to a region in which the diode D is formed. Has Therefore, the aspect ratio is substantially the same as in the third and fourth embodiments described later.

Referring to the pixel according to the third embodiment of the present invention illustrated in FIG. 4A, a light emitting device D is formed over the entire unit pixel region on the substrate 10 to form a lower layer. Diodes (D) and capacitors (C) are formed adjacent to the same plane to form an upper layer. In this third embodiment, since the capacitor (C) has a smaller area than the first and second embodiments described above, the capacitor (C) should be formed of a material having a higher dielectric constant than the other embodiments, whereas Since the light emitting device E is formed over the entire pixel area, it has an enlarged aperture ratio compared to the first and second embodiments described above.

The pixel according to the fourth embodiment of the present invention illustrated in FIG. 4B has a structure in which the lower and upper layers of the pixel illustrated in FIG. 4A are inverted (inverted). That is, the diode D and the capacitor C are formed in each divided area of the unit pixel region on the substrate 10 to form a lower layer, and the light emitting device E formed over the unit pixel region is formed on the upper layer. Achieve.

As described above, in the pixel according to the present invention illustrated in FIGS. 4A and 4B, a light emitting device E forming one layer is formed over the unit pixel region, and the diode D and the capacitor C are It has a structure provided in each divided area of the unit pixel region, and forms a stack having a first layer and a second layer together with the layer formed by the light emitting device (E).

Referring to FIG. 4C, which is a modification of the pixel illustrated in FIG. 4A, the capacitor C is extended over the diode D. FIG. These pixels are each provided in a region in which the capacitor E and the diode D are separated from the unit pixel region, and in this case, the capacitor C extends to the region where the diode D is formed.

FIG. 5A is a plan view of a part of the display panel according to the first embodiment of the above-described embodiments, and FIG. 5B is a cross-sectional view taken along line AA of FIG. 5A. The pixel shown in FIGS. 5A and 5B embodies the schematic structure shown in FIG. 3A. 5C shows a vertical structure incorporating the pixel shown in FIG. 3B, and FIG. 5D shows a vertical structure incorporating the pixel shown in FIG. 3C.

First, referring to FIG. 5A, the data signal line 21 in the Y direction and the control signal line 22 in the X direction are arranged perpendicularly. The control signal line 22 includes an ITO control signal line 22a having a high resistance and light transmittance and a metal bus line 22b for the ITO line. Since the data signal line 21 is not located in the light passing region, the data signal line 21 is formed of a low resistance metal such as chromium or molybdenum. In the uppermost layer, a metal, for example, Al common electrode 62 is formed. The diode D, the capacitor C, and the light emitting device E are disposed below the common electrode 62.

Referring to 5B, which is a cross-sectional view taken along the line A-A of FIG. 5A, a control signal line 22 is formed on the substrate 10. A dielectric layer 41, which is an element of the capacitor C, is stacked on the control signal line 22, and the upper electrode 42 of the capacitor C is made of a transparent material, for example, ITO or IZO, on the dielectric layer 41. Is formed. The upper electrode 42 of the capacitor C also functions as the lower electrode of the light emitting device E.

The lower electrode 51 of the diode D is formed on one side (right side in the drawing) of the upper electrode 42 of the capacitor, and the diode material layer 52 is formed thereon, and the data signal line 21 thereon. ) Is formed. Here, the lower electrode 51 of the diode D is an optional element, and the upper electrode 42 of the capacitor may perform the function instead. That is, the diode material layer 52 may be formed directly on the upper electrode 42 of the capacitor.

On the other hand, the organic light emitting material layer 61 is formed on the other side (left side in the figure) of the upper electrode 42 of the capacitor, and the metallic common electrode 62 is formed thereon. Under the metallic common electrode 62, electrical insulating layers 43 and 44 are formed at portions other than the portion in contact with the organic light emitting material layer 61. The insulating layers 43 and 44 are formed at portions requiring electrical insulation between devices during the manufacturing process, and are preferably formed of silicon oxide, silicon nitride, an organic insulating material, or the like. As shown in FIG. 5B, the lowermost lower insulating layer 43 and the upper insulating layer 44 thereon are opened below the organic light emitting material layer 61 so that the organic light emitting material layer 61 is formed of the capacitor C. As shown in FIG. Contact with the upper electrode 42 to be electrically conductive.

Here, "open" means that a so-called contact hole, or via hole, which interconnects the upper and lower stacks is formed in an intermediate layer located between certain stacks. In the first and second insulating layers, the lower insulating layer 43 is open under the data signal line 21 to make electrical contact between the diode material layer 52 and the data signal line 21. The upper insulating layer 44 covers the data signal line 21 and is electrically isolated from the common electrode 62 thereon. The upper insulating layer is formed of silicon oxide, silicon nitride, or an organic insulating material.

 In the above structure, the control signal line includes an ITO line and a bus line, which allows a light beam generated from the light emitting element E to be moved to the substrate 10 side using a transparent material, and the bus line is an ITO line. Compensating the high resistance of the reduces the resistance of the overall control signal line. Such bus lines may be formed of chromium, molybdenum or molybdenum alloys.

In the above structure, the diode material layer is formed of a material having electrical orientation. The diode may be a PN diode or a Schottky diode, preferably a Schottky diode having a stacked structure of electrodes / n + amorphous silicon / i− amorphous silicon / electrode. Therefore, in the embodiment of the present invention, the diode material layer has a stacked structure of n + amorphous silicon / i- amorphous silicon. In order to form such a diode, intrinsic amorphous silicon and doped amorphous silicon or intrinsic polycrystalline silicon and doped polycrystalline silicon may be used. After deposition of this material, it is patterned by a photolithography process.

The lower electrode of the diode D is deposited using chromium or molybdenum in consideration of the resistance of the capacitor upper electrode and then patterned by a photolithography process. Specifically, in the diode manufacturing process, after forming the lower electrode, a diode material is deposited thereon and a protective film is deposited thereon. Subsequently, in order to expose the diode material layer, the passivation layer is opened through the photolithography process. In this way, the protective film is opened to expose the surface of the diode material layer, and then the data signal line is formed as an upper electrode of the diode. At this time, the upper electrode or data signal line is formed of chromium or molybdenum.

5A and 5B have a structure in which light propagates toward the substrate 10, and thus, a stack, in particular, electrodes provided on the light path is formed of a transparent material. On the contrary, however, in the manner in which the light beam propagates upward, the materials between the organic light emitting material layer and the substrate need not be transparent, but the common electrode thereon is formed of a transparent material, for example, ITO or IZO.

Referring to FIG. 5C, a common electrode 62a made of a transparent conductive material such as ITO or IZO is formed on the substrate 10. Since the common electrode 62a has a high resistance, a bus line made of a low resistance material may be formed in a portion outside the pixel area.

An organic light emitting material layer 61 is formed on one side (left side in the drawing) of the common electrode 62a, and a lower insulating layer 45 is formed thereon. The lower insulating layer 45 is opened on the upper surface of the organic light emitting material layer 61 to be in contact with the lower electrode 46 of the capacitor C to be described later. On the other hand, a metallic data signal line 21 is formed on one side (right side in the drawing) on the lower insulating layer 45. An upper insulating layer 47 is formed on the data signal line 21, and the upper insulating layer is opened in the organic light emitting material layer 61, like the lower insulating layer 45, and the data signal line. (21) Open above. The diode material layer 52 is stacked on the data signal line 21 not covered by the upper insulating layer 47.

The lower electrode 46 of the capacitor C having a function of the upper electrode of the diode is formed on the diode material layer 52 and the upper insulating layer 47. The dielectric material layer 41 is formed on the lower electrode 46 of the capacitor C, and the upper electrode 48 of the capacitor C is formed thereon.

Referring to FIG. 5D, a control signal line 22 is formed on the substrate 10. The dielectric layer 41, which is an element of the capacitor C, is stacked on the control signal line 22, and the upper electrode 42 of the capacitor C is made of a transparent material, for example, ITO or IZO, on the dielectric layer 40. Is formed. The upper electrode 42 of the capacitor C also functions as the lower electrode of the light emitting device E.

The lower electrode 51 of the diode D is formed on one side (right side in the drawing) of the upper electrode 42 of the capacitor, and the diode material layer 52 is formed thereon, and the data signal line 21 thereon. ) Is formed. The structure of FIG. 5D described above is substantially the same as the structure of FIG. 5B. Here, the lower electrode 51 of the diode D is an optional element, and the upper electrode 42 of the capacitor may perform the function instead. That is, the diode material layer 52 may be formed directly on the upper electrode 42 of the capacitor.

Meanwhile, as mentioned in the description of FIG. 3C, an extended light emitting device is formed on the stacked structure. That is, the organic light emitting material layer 61 is formed on the other side (left side in the drawing) of the upper electrode 42 of the capacitor, and the organic light emitting material layer 61 extends over the diode D. The metallic common electrode 62 is formed on the organic light emitting material layer 61. Under the metallic common electrode 62, electrical insulating layers 43 and 44 are formed at portions other than the portion in contact with the organic light emitting material layer 61. The insulating layers 43 and 44 are formed at portions requiring electrical insulation between devices during the manufacturing process, and are preferably formed of silicon oxide, silicon nitride, an organic insulating material, or the like. As shown in FIG. 5B, the lowermost lower insulating layer 43 and the upper insulating layer 44 thereon are opened below the organic light emitting material layer 61 so that the organic light emitting material layer 61 is formed of the capacitor C. As shown in FIG. Contact with the upper electrode 42 to be electrically conductive. The organic light emitting material layer 61 having such an extended structure widens the aperture ratio through light emission in a wider area. The expanded organic light emitting material layer 61 substantially occupies the entire unit pixel area. In addition, the dielectric layer 41 constituting the capacitor is formed over the entire unit pixel region. This has the characteristics of the pixel shown in Fig. 3A and the pixel shown in Fig. 3B. That is, it has both the high numerical aperture of the pixel of FIG. 3A and the low dielectric constant of the dielectric layer of the pixel of FIG. 3B.

6A and 6B are embodied vertical cross-sectional views of the pixels conceptually shown in FIGS. 4A and 4B, respectively.

Referring to FIG. 6A, a common electrode 62a made of a transparent conductive material such as ITO or IZO is formed on the substrate 10. Since the common electrode 62a has a high resistance, a bus line made of a low resistance material may be formed in a portion outside the pixel area.

An organic light emitting material layer 61 is formed on the common electrode 62a and occupies the entire unit pixel area, and a lower insulating layer 45 is formed thereon. The lower insulating layer 45 is opened on the upper surface of the organic light emitting material layer 61 to be in contact with the lower electrode 46 of the capacitor C to be described later. On the other hand, a diode material layer 52 is formed on one side (right side in the drawing) above the lower electrode 46. An upper insulating layer 47 is formed on the diode material layer 52, and is opened on the diode material layer 52.

The data signal line 21 is formed on the diode material layer 52 not covered by the upper insulating layer 47, and the protective layer 48 is formed thereon.

On the other hand, a dielectric material layer 41, which is an element of the capacitor C, is formed on the other side (left side in the drawing) of the lower electrode 46. The dielectric material layer 41 is formed on the upper insulating layer 47 and the protective layer 48 thereon, and the lower electrode is formed through the contact holes provided in the upper insulating layer 47 and the protective layer 48. 46 and dielectric layer 41 are in electrical contact.

At the top of the stack is a control signal line 22 formed of a conductive material, for example metal, ITO or IZO. The control signal line 22 is in contact with the dielectric material layer 41 so as to function as an upper electrode of the capacitor C, and is isolated from the data signal line 21 by the protective layer 49.

Referring to FIG. 6B, a control signal line 22 is formed on a substrate 10 with a transparent conductive material such as ITO or IZO. Since the control signal line 22 has a high resistance, a bus line 22a (see FIG. 5A) made of a low resistance material may be formed at a portion outside the pixel area.

A dielectric material layer 41 is formed on one side (left side in the drawing) of the control signal line 22, and a lower insulating layer 45 is formed thereon. The lower insulating layer 45 is opened on the dielectric material layer 41. The data signal line 21 is formed on the other side (right side in the drawing) of the control signal line 22. An upper insulating layer 47 is formed on the data signal line 21, and the upper insulating layer 47 is opened on the data signal line 21 and the dielectric material layer 41. The diode material layer 52 is formed on the data signal line 21 exposed through the open area (contact hole) of the upper insulating layer 47.

An upper electrode of the diode D and a lower electrode 46 having a function as an upper electrode of the capacitor C are formed on the diode material layer 52. An organic light emitting material layer 61 is formed on the lower electrode 46, and a common electrode 62 is formed on the organic light emitting material layer 61.

Various embodiments have been described above. Such embodiments are merely exemplary of the present invention. Insulating layers, signal lines, and means for protecting the components, which are attached to the characteristic arrangement of capacitors, diodes, and light emitting elements, which are the basic components constituting each pixel of the matrix display panel according to the present invention, are appropriately designed. Can be deployed. For example, the insulating layer or the protective layer has a multilayer structure instead of a single layer, and the insulating layer and the protective layer can be adjusted to the overall structure.

In the display panel according to the present invention as described above, generally known film forming technology is applied, and in particular, various types of lithography technology may be applied.

The matrix display panel according to the present invention has an optimal component arrangement structure, and thus has high power efficiency and high quality and reliability. In addition, the display panel having the characteristic laminated structure according to the present invention is easy to manufacture and high yield.

The present invention can be widely applied to a matrix display device using an organic light emitting device.

For the understanding of the display panel of the present invention, it has been described with reference to the embodiment shown in the drawings, but this is only illustrative, various modifications and equivalent other embodiments are possible to those skilled in the art. Will understand. Therefore, the true technical protection scope of the present invention should be defined only in the appended claims.

1 is an equivalent circuit diagram of a matrix display panel according to the present invention.

2A is an equivalent circuit diagram of a pixel in which a switching device and a light emitting device are combined in an embodiment of a matrix display panel according to the present invention.

2B is an equivalent circuit diagram of a pixel in which a switching device and a light emitting device are combined in another embodiment of the matrix display panel according to the present invention.

3A and 3B show a vertical layout of a pixel in which a capacitor is generally formed in a unit pixel region, and a light emitting device and a diode are provided in a unit pixel region divided in a layer different from the capacitor.

FIG. 3C shows a vertical layout of a pixel in which a light emitting device is expanded over a diode in a pixel having a structure as shown in FIG. 3A.

4A and 4B show a vertical layout of a pixel in which a light emitting device is generally formed in a unit pixel area, and a diode and a capacitor are provided in a unit pixel area divided in a layer different from the light emitting device.

4C shows a vertical layout of a pixel in which a capacitor has a structure in which a capacitor is extended over a diode in a pixel having a structure as shown in FIG. 4A.

Fig. 5A is a top view showing a local layout of a matrix display panel according to the present invention.

FIG. 5B is a cross-sectional view taken along the line A-A of FIG. 5A and is a vertical cross-sectional view of a pixel in which a capacitor is provided on a lower layer and a light emitting element and a diode are provided on an upper layer.

5C is a vertical cross-sectional view of a pixel in which a light emitting device and a diode are provided in a lower layer and a capacitor is provided in an upper layer, as opposed to the stacked structure of the pixel illustrated in FIG. 5B.

5D is a vertical cross-sectional view of a pixel having a structure in which a light emitting device formed on a capacitor is extended over a diode.

6A is a vertical cross-sectional view of a pixel according to the present invention in which a light emitting device is provided on a lower layer and a capacitor and a diode are provided on an upper layer.

6B is a vertical cross-sectional view of a pixel according to the present invention in which a capacitor and a diode are provided in a lower layer and a light emitting device is provided in an upper layer.

Claims (14)

A light emitting element having a first pole and a second pole having a polarity opposite to that of the first pole in each unit pixel region provided near the intersection of the data signal line and the control signal line arranged in the matrix; A diode having a first pole connected to the data electrode and a second pole opposite to the first pole and connected to the first pole of the light emitting element; And a capacitor having a first terminal connected to a contact point of a first pole of a light emitting element and a second pole of a diode, and a second terminal to which the control signal is applied. One of the first elements of the light emitting element, the diode, and the capacitor is formed over the entire pixel region, and the other two elements, the second and third elements, are formed in the divided regions on any one surface of the first element. Matrix-type display panel, characterized in that. The method of claim 1, Wherein the first element is a light emitting element, and the second and third elements formed on one surface thereof are a diode and a capacitor. The method of claim 1, Wherein the first element is a diode, and the second and third elements are light emitting elements and capacitors. The method of claim 1, Wherein the first element is a capacitor, and the second and third elements are light emitting elements and diodes. The method of claim 4, wherein And the light emitting device extends to an area where the diode is formed. The method of claim 1, And a first pole of the diode and a first pole of the light emitting element are an anode, and a second pole of the diode and a second pole of the light emitting element are cathodes. The method according to any one of claims 1 to 6, A matrix display panel having a structure in which a first electrode of a light emitting device, a second electrode of a diode, and a first terminal of a capacitor share a single electrode. A substrate; A control signal line on the substrate, the control signal lines being arranged side by side in a first direction; A plurality of data signal lines arranged on the substrate in parallel with each other in a second direction perpendicular to the first direction; A capacitor and a diode provided in a first layer of a unit pixel area defined at an intersection of the control signal line and the data signal line; A light emitting element provided in a second layer of a unit pixel area defined at an intersection of the control signal line and the data signal line; And And an electrode provided between the first layer and the second layer and shared by the capacitor, the diode, and the light emitting element. The method of claim 8, And the first layer is formed on the substrate, and the second layer is provided on the first layer. The method of claim 8, And the second layer is formed on the substrate, and the first layer is provided on the second layer. A substrate; A control signal line on the substrate, the control signal lines being arranged side by side in a first direction; A plurality of data signal lines arranged on the substrate in parallel with each other in a second direction perpendicular to the first direction; A capacitor provided in a first layer of a unit pixel area defined at an intersection of the control signal line and the data signal line; A light emitting element and a diode provided in a second layer of a unit pixel area defined at an intersection of the control signal line and the data signal line; And And an electrode provided between the first layer and the second layer and shared by the capacitor, the diode, and the light emitting element. The method of claim 11, And the first layer is formed on the substrate, and the second layer is provided on the first layer. The method of claim 11, And the second layer is formed on the substrate, and the first layer is provided on the second layer. The method according to claim 11, wherein The light emitting device is a matrix type display panel, characterized in that extended to the portion where the diode is formed.