KR20050022615A - light exposure device for manufacturing semiconductor and light intensity as well as light uniformity adjust method using it - Google Patents

Abstract

PURPOSE: An exposure apparatus and method of controlling light intensity and distribution using the same are provided to realize optimally the light intensity and distribution without the replacement of a lens by rotating a first and second control lens. CONSTITUTION: An exposure apparatus includes a light source, a plurality of mirrors, a plurality of lenses, and a light intensity and distribution controlling. The controlling lens(400) includes a disc type of first and second control lens. The first control lens(410) includes a first pivot(411), a plurality of first openings(413) along the periphery, and a first fly lens(414) within each first opening. The second control lens(420) includes a second pivot(421), a plurality of second openings(423) along the periphery, and a second fly lens(424) within each second opening.

Description

Light exposure device for manufacturing semiconductor and light intensity as well as light uniformity adjust method using it}

The present invention relates to an exposure apparatus for manufacturing a semiconductor and a light intensity and a light distribution control method using the same, in more detail, an exposure apparatus for semiconductor manufacturing that can easily adjust the symmetric or asymmetric light intensity and light distribution without replacing the lens and It relates to a light intensity and light distribution control method using the same.

Referring to FIG. 1, a schematic diagram of a conventional exposure apparatus, a reticle, and a wafer for semiconductor manufacturing is shown.

As shown in the drawing, a conventional exposure apparatus E 'for semiconductor manufacturing includes a light source 100' generating light of a predetermined wavelength band and first, second, and third mirrors 201 reflecting light from the light source 100 '. Lenses 301 ', 302', and 303 'formed between the mirrors 202' and 203 'and the mirrors 201', 202 'and 203' to condense light and filter only light of a predetermined wavelength band. And a relay lens 304 'installed at the rear of the lenses 301', 302 ', and 303' to adjust the intensity and distribution of light. Here, the condensing and filtering lenses 301 ′, 302 ′, and 303 ′ are many more, but only a few lenses are shown in the drawing.

In addition, a reticle 500 'having a predetermined pattern is positioned below the third mirror 203', and a wafer 600 'is positioned below the reticle 500'. Located above 601 '.

Therefore, light from the exposure apparatus E 'passes through the reticle 500', thereby forming a predetermined pattern on the surface of the wafer 600 '.

On the other hand, when the exposure apparatus E 'is used for a long time, the wafer may be exposed due to the high energy of the light source 100' and contamination of the mirrors 201 ', 202' and 203 'or the lenses 301', 302 and 303 'itself. The intensity and distribution of the light reaching 600 'will deviate from the optimal value. For example, as shown in FIG. 2, the central region has a weak light intensity (-), the outer periphery is an illusion (環狀 '), and the light intensity is strong (+), and the outer periphery is an annular light. The strength of can be a stronger (++) form. When the intensity and distribution of light are not constant as described above, there is a problem that the pattern formed on the wafer 600 'is not uniform and the yield of the wafer 600' is greatly reduced.

Therefore, conventionally, when the intensity and distribution of light are not constant, the position of the relay lens 304 'provided in the exposure apparatus E' is changed and adjusted. For example, as shown in FIG. 3, moving the relay lens 304 ′ to the right increases the intensity of light reaching the wafer 600 ′, concentrating the distribution to the center, and relay lens 304 ′. Moving to the left, the intensity of light reaching the wafer 600 'is weakened and the distribution becomes wider. Therefore, the distribution of light as shown in FIG. 2 can be adjusted relatively uniformly.

However, when the intensity and distribution of the light reaching the wafer are not symmetrical in the left, right, up, and down directions as shown in FIG. 4 (in FIG. 4, the light intensity in the upper right and lower left regions is high). +), The intensity of light in the center, upper left and lower right regions is weak (-)), there is a problem that the distribution of light cannot be uniformed only by moving the relay lens 304 '. That is, the relay lens 304 ′ may be used only when the distribution of light is symmetrically about the center, and may not be used when the light is distributed asymmetrically. Therefore, in this case, the light condensing or filtering lenses 301 ', 302', and 303 'have no choice but to be replaced, and this replacement cost is very expensive, causing a problem in that the price burden increases.

The present invention is to overcome the above-mentioned conventional problems, an object of the present invention is to provide a semiconductor manufacturing exposure apparatus that can easily adjust the symmetrical or asymmetric light intensity and light distribution without the exchange of lenses and the light intensity and light fraction using the same The present invention provides a method of controlling grapes.

In order to achieve the above object, an exposure apparatus for manufacturing a semiconductor according to the present invention includes a light source emitting light of a predetermined wavelength band, a plurality of mirrors reflecting light emitted from the light source a plurality of times and leading to a reticle, and between the mirrors. Lenses for adjusting the light intensity and light distribution having a plurality of lenses installed to focus the light emitted from the light source, to filter only the light of a predetermined wavelength, and a plurality of fly lenses to adjust the intensity and distribution of light toward the reticle Characterized in that consisting of.

Here, the light intensity and light distribution adjusting lens is a substantially disk shape having a central axis of rotation in the center, a plurality of openings are formed along the inner circumference of the disk, each opening has a fly lens having a plurality of cell lenses Is formed in the shape of a substantially circular disk having a central axis of rotation, and a plurality of openings formed along the inner circumference of the disk, the opening being positioned with any one opening of the first adjusting lens. Overlapping and the opening may be a second adjustment lens coupled to a fly lens having a plurality of cell lenses.

In addition, the fly lens may be formed with a chrome pattern of a predetermined area on a specific cell lens of the selected specific fly lens.

In addition, the chrome pattern may be formed in a different cell lens for each fly lens.

In addition, the chromium pattern may be formed to occupy 5 to 95% of the cell lens area.

In addition, eight openings may be formed in the first and second adjustment lenses.

In addition, a fly lens without a chrome pattern is installed in one of the openings, a fly lens with a chrome pattern is installed in the other opening, and a fly lens with a chrome pattern is installed in the lower left corner of the other opening. In the other opening, a fly lens with a chrome pattern is installed only in the upper right corner, and in the other opening, a fly lens with a chrome pattern is installed only in the upper left corner, and in the other opening, a fly lens with a chrome pattern is installed only in the lower right corner The other opening is provided with a fly lens having a chrome pattern on the whole except the perimeter, and the other opening may be provided with a fly lens having a chrome pattern having a relatively large area on the whole except the perimeter.

In addition, in order to achieve the above object, the light intensity and the light distribution control method of the exposure apparatus for semiconductor manufacturing according to the present invention comprises the steps of determining whether the intensity and distribution of light emitted from the light source of the exposure apparatus for semiconductor manufacturing is uneven; If the intensity and distribution of the non-uniformity, a plurality of openings are formed, each opening is formed with a first adjustment lens provided with a fly lens that can form a chrome pattern in a particular cell lens, a plurality of openings are formed in each opening And a second adjustment lens provided with a fly lens in which a chrome pattern may be formed in a specific sensor, and the plurality of openings provided in the first adjustment lens and the second adjustment lens may be combined in a number of possible cases and emitted from the light source. At the same time, the intensity of light is reduced, and the distribution is made uniform.

According to the exposure apparatus for manufacturing a semiconductor according to the present invention as described above and the light intensity and light distribution control method using the same, while rotating the first control lens and the second control lens having a plurality of fly lenses in the form of a reverberator without replacing the lenses Optimum light intensity and light distribution can be achieved.

In addition, as well as symmetrically nonuniform light intensity and light distribution, as well as asymmetrically nonuniform light intensity and light distribution can be easily adjusted.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings such that those skilled in the art may easily implement the present invention.

5, the block diagram of the exposure apparatus E for semiconductor manufacture by this invention is shown.

As illustrated, the exposure apparatus E for manufacturing a semiconductor according to the present invention reflects a light source 100 emitting light of a predetermined wavelength band and the light emitted from the light source 100 a plurality of times to guide the reticle 500. A plurality of lenses 301, 302, 303 installed between the plurality of mirrors 201, 202, 203 and the mirrors 201, 202, 203 to collect light emitted from the light source 100, and to filter only light of a predetermined wavelength band, and the reticle 500. It consists of a light intensity and light distribution control lens 400 having a first control lens 410 and a second control lens 420 to adjust the intensity and distribution of the light toward.

The light source 100 may be a conventional G-line (436 nm), I-line (365 nm), KrF laser (248 nm), ArF laser (193 nm) or F2 laser (157 nm), where the light source 100 It does not limit the kind.

The mirrors 201, 202, and 203 are installed between the light source 100 and the reticle 500, which reflects light from the light source 100 a plurality of times to reach a predetermined direction, that is, the reticle 500. .

The plurality of lenses 301, 302, and 303 may include a plurality of condensing lenses for condensing light from the light source 100, and a filtering lens for passing only light of a predetermined wavelength band. In the drawings, only reference numerals 301 to 303 are used, and the condenser lens and the filtering lens are not separately illustrated.

In the drawing, reference numeral 501 denotes a stage on which the reticle 500 is seated, 600 is a wafer, and 601 is a stage on which the wafer 600 is seated.

In addition, the light intensity and light distribution adjusting lens 400 is provided between the plurality of lenses (301 ~ 303) and any one mirror (201 ~ 203). However, the light intensity and light distribution control lens 400 does not specify the installation position, but may be installed in other positions. The light intensity and light distribution adjusting lens 400 is composed of a first adjustment lens 410 and a second adjustment lens 420, which serves to make the intensity and distribution of symmetrical or asymmetrical light uniform.

Referring to FIG. 6, a coupling state diagram of the lens 400 for adjusting the light intensity and light distribution in the exposure apparatus for manufacturing a semiconductor according to the present invention is illustrated.

As shown, the lens 400 for adjusting the light intensity and light distribution is a substantially disk 412 having a central axis of rotation 411 at the center, and a plurality of openings 413 are formed along an inner circumference of the disk 412. Each of the openings 413 includes a first adjustment lens 410 coupled with a fly lens 414 having a plurality of cell lenses (see FIG. 7), and a roughly circular plate having a central axis of rotation 421 at the center thereof. 422, wherein a plurality of openings 423 are formed along an inner circumference of the disc 422, the openings 423 being positioned with any one opening 413 of the first adjustment lens 410. Is overlapped, and the opening 423 includes a second adjustment lens 420 coupled to a fly lens 424 having a plurality of cell lenses (see FIG. 7). Here, although eight openings 413 and 423 formed in the first adjustment lens 410 and the second adjustment lens 420 are formed in the drawing, this is only one example, and the present invention is the number of the openings 413 and 423. It is not intended to be limiting. In addition, the shape of the discs 412 and 422, the shape of the openings 413 and 423, the shape of the fly lenses 414 and 424 and the shape of each cell lens of the fly lenses 414 and 424 are not limited to the drawings shown in the present invention. You can change the form.

Referring to FIG. 7, an enlarged view of one fly lens 414 in the light intensity and light distribution adjusting lens 400 of FIG. 6 is illustrated. Here, the following fly lens 414 is described as being installed in the first adjustment lens 410, the fly lens 424 installed in the second adjustment lens 420 is the same as the above fly lens 414, The description will be omitted.

As shown, the fly lens 414 installed in one of the openings 413 is composed of a plurality of cell lenses 415, each of the cell lenses 415 is a quadrilateral, the number is formed of about 25. . However, the shape of the cell lens 415 is not limited to a quadrangular shape, and the number of cell lenses 415 is not limited to 25, but may be changed to various shapes and numbers.

Referring to FIG. 8, an enlarged view of another fly lens 414 in the light intensity and light distribution adjusting lens 400 of FIG. 6 is shown. Here, the same reference numerals as those of the fly lens and the like will be used.

As shown, the fly lens 414 installed in the other opening 413 also includes a plurality of cell lenses 415. Here, the chrome pattern 416 is further formed in the four cell lenses 415 formed at the center of the fly lens 414. The chrome pattern 416 may be formed with 5 to 95% of the total area of each cell lens 415. Of course, other types of patterns may be formed in addition to the chromium pattern 416, and the present invention is not limited to the chromium pattern. In addition, when the total number of cell lenses 415 is changed, the number of cell lenses 415 having the chrome pattern 416 formed at the center may also be changed.

9, an enlarged view of another fly lens 414 in the light intensity and light distribution adjusting lens 400 of FIG. 6 is shown.

As shown, the fly lens 414 installed in the other opening 413 also includes a plurality of cell lenses 415. Here, the chrome pattern 416 is further formed on the four cell lenses 415 formed at the lower left of the fly lens 414. Of course, the features of the chrome pattern 416 is as described above.

Referring to FIG. 10, an enlarged view of another fly lens 414 in the light intensity and light distribution adjusting lens 400 of FIG. 6 is shown.

As shown, the fly lens 414 installed in the other opening 413 also includes a plurality of cell lenses 415. Here, the chrome pattern 416 is further formed on the four cell lenses 415 formed on the upper right side of the fly lens 414.

Referring to FIG. 11, an enlarged view of another fly lens 414 in the light intensity and light distribution adjusting lens 400 of FIG. 6 is shown.

As shown, the fly lens 414 installed in the other opening 413 also includes a plurality of cell lenses 415. Here, the chrome pattern 416 is further formed on the four cell lenses 415 formed on the upper left side of the fly lens 414.

Referring to FIG. 12, an enlarged view of another fly lens 414 in the light intensity and light distribution adjusting lens 400 of FIG. 6 is shown.

As shown, the fly lens 414 installed in the other opening 413 also includes a plurality of cell lenses 415. Here, the chrome pattern 416 is further formed on the four cell lenses 415 formed at the lower right side of the fly lens 414.

Referring to FIG. 13, an enlarged view of another fly lens 414 in the light intensity and light distribution adjusting lens 400 of FIG. 6 is shown.

As shown, the fly lens 414 installed in the other opening 413 also includes a plurality of cell lenses 415. Here, the chrome pattern 416 is further formed in the sixteen cell lenses 415 formed at the center of the fly lens 414.

Referring to FIG. 14, an enlarged view of another fly lens 414 in the light intensity and light distribution adjusting lens 400 of FIG. 6 is shown.

As shown, the fly lens 414 installed in the other opening 413 also includes a plurality of cell lenses 415. Here, the chromium pattern 416 is further formed in the sixteen cell lenses 415 formed at the center of the fly lens 414, and the area ratio of the chromium pattern 416 is shown in FIGS. 7 to 14 above. It may be relatively larger than the area ratio of the foam pattern.

Formation position of the chromium pattern 416 formed in the cell lens 415 of the fly lens 414 described above is only a few examples, and may be formed in various forms at various locations, the formation of the chromium pattern in the present invention It does not specify the location and shape.

As described above, the shape of the chrome pattern 416 of the fly lens 414 formed in each opening 413 of the first adjustment lens 410 and the second adjustment lens 420 is different (of course, the chrome pattern ( 416 may be absent), the proper combination of such a fly lens 414 of the first adjustment lens 410 and the second adjustment lens 420 may improve symmetrical or asymmetric light intensity and light distribution. Able to know. Of course, the light intensity decreases as the light distribution improves, but it is not only possible to compensate the weak light intensity sufficiently by increasing the light exposure time, but also because the weak light intensity falls within the error range during the semiconductor manufacturing process. It does not significantly affect the yield of (600).

Referring to FIG. 15, a sequential explanatory diagram of a method for improving light distribution using the exposure apparatus for semiconductor manufacturing according to the present invention is shown, and referring to FIG. 16, light powder using the exposure apparatus for semiconductor manufacturing according to the present invention. A method of improving grapes is shown. Referring to FIGS. 15 and 16, not only the light intensity and light distribution control method according to the present invention, but also the operation of the light intensity and light distribution control lens 400 in the exposure apparatus of the present invention will be described at the same time.

As shown, the method for adjusting the light intensity and the light distribution of the exposure apparatus for semiconductor manufacturing according to the present invention first determines whether the intensity and distribution of the light emitted from the light source 100 of the exposure apparatus for semiconductor manufacturing are uneven (S1) and When the intensity and distribution of the light are nonuniform, the light intensity and light distribution adjusting lens 400 having a plurality of fly lenses 414 may be adjusted (S2).

Here, the light intensity and light distribution control lens 400, a plurality of openings 413 are formed, each opening 413 is formed with a chrome pattern 416 in a specific cell lens 415 (chrome pattern 416 A first adjustment lens 410 provided with a fly lens 414 and a plurality of openings 423 are formed, and each opening 423 has a chrome formed in a specific cell lens. The second adjustment lens 420 is provided with a fly lens 424 having a pattern (including a cell lens without a chrome pattern), which is the first adjustment lens 410 and the second adjustment lens 420 The plurality of openings 413 and 423 provided in the combination of the plurality of openings 413 and 423 may be combined to reduce the intensity of the light emitted from the light source 100 and make the distribution uniform.

For example, as illustrated in FIG. 16, a light control method will be described by an example in which the intensity and distribution of light emitted from a light source are strong at the lower left and upper right, and the upper left, center and lower right are weak.

First, a specific opening 413 of the first adjustment lens 410 (or the second adjustment lens 420) is selected among the light intensity and light distribution adjusting lenses 400. That is, the specific fly lens 414 is selected. In this case, the fly lens 414 having the chrome pattern 416 formed on the cell lenses 415 on the upper right side is selected.

Subsequently, the specific opening 423 of the second adjustment lens 420 (or the first adjustment lens 410) of the light intensity and light distribution adjustment lens 400 is positioned on the first adjustment lens 410 (or the second). To the selected aperture 413 of the adjustment lens 420. In this case, the fly lens 424 installed in the specific opening 423 of the second adjustment lens 420 is such that the chrome pattern 426 is formed on the cell lenses 425 of the lower left.

The light passing through the above-described light intensity and light distribution control lens 400 as a whole is due to the chromium patterns 416 and 426 formed on the cell lenses 415 and 425 of the fly lenses 414 and 424. Weakens. Therefore, although the intensity of light as a whole is weakened, evenly distributed light can be obtained, and the light is transmitted to the wafer through the reticle, thereby improving the yield of the wafer. Of course, as described above, the weakened light intensity does not significantly reduce the yield of the wafer, and the weakened light intensity is included in the error range and is not a serious problem in the semiconductor manufacturing process.

As described above, the exposure apparatus for manufacturing a semiconductor according to the present invention and the light intensity and light distribution adjusting method using the same are optimal while rotating the first adjusting lens and the second adjusting lens having a plurality of fly lenses in a reverberation type without replacing the lenses. The light intensity and light distribution of the effect can be implemented.

In addition, as well as symmetrically nonuniform light intensity and light distribution, there is an effect that can be easily adjusted asymmetrically nonuniform light intensity and light distribution.

What has been described above is only one embodiment for implementing the exposure apparatus for semiconductor manufacturing and the light intensity and light distribution control method using the same according to the present invention, the present invention is not limited to the above embodiment, the following claims As claimed in the scope of the present invention, those skilled in the art to which the present invention pertains will have the technical spirit of the present invention to the extent that various modifications can be made.

1 is a block diagram showing a conventional exposure apparatus, a reticle and a wafer for semiconductor manufacturing.

2 is an explanatory diagram showing an operating state of a relay lens in a conventional exposure apparatus for semiconductor manufacturing.

3 is a state diagram illustrating a poor symmetric light distribution diagram output from a conventional exposure apparatus for semiconductor manufacturing.

4 is a state diagram illustrating a poor asymmetric light distribution diagram output from an exposure apparatus for manufacturing a semiconductor.

5 is a configuration diagram showing an exposure apparatus for manufacturing a semiconductor according to the present invention.

6 is a plan view showing a combined state of the light intensity and light distribution control lens in the exposure apparatus for manufacturing a semiconductor according to the present invention.

FIG. 7 is a plan view illustrating one fly lens in the light intensity and light distribution adjusting lens of FIG. 6.

8 is a plan view illustrating another fly lens in the lens for adjusting the light intensity and light distribution of FIG. 6.

FIG. 9 is a plan view illustrating another fly lens of the light intensity and light distribution adjusting lens of FIG. 6.

FIG. 10 is a plan view illustrating another fly lens in the light intensity and light distribution adjusting lens of FIG. 6.

FIG. 11 is a plan view illustrating another fly lens in the light intensity and light distribution adjusting lens of FIG. 6.

12 is a plan view illustrating another fly lens in the lens for adjusting the light intensity and light distribution of FIG. 6.

FIG. 13 is a plan view illustrating another fly lens of the light intensity and light distribution adjusting lens of FIG. 6.

FIG. 14 is a plan view illustrating another fly lens of the light intensity and light distribution adjusting lens of FIG. 6.

15 is a sequential explanatory diagram showing a method of improving the light distribution diagram using the exposure apparatus for manufacturing a semiconductor according to the present invention.

16 is an explanatory diagram showing a method of improving the light distribution diagram using the exposure apparatus for manufacturing a semiconductor according to the present invention.

<Description of Symbols for Main Parts of Drawings>

100; Light sources 201,202,203; mirror

301,302,303; Lens 400; Lens for adjusting light intensity and light distribution

410; First adjusting lens 411; Rotation center axis

412; Disc 413; Opening

414; Fly lens 415; Cell lens

416; Chrome pattern 420; 2nd adjustment lens

500; Reticle 501; Reticle stage

600; Wafer 601; Wafer stage

Claims (8)

A light source emitting light of a predetermined wavelength band; A plurality of mirrors reflecting the light emitted from the light source a plurality of times to guide the reticle; A plurality of lenses disposed between the mirrors to collect light emitted from the light source and filter only light of a predetermined wavelength band; And, Exposure apparatus for manufacturing a semiconductor comprising a lens for adjusting the light intensity and light distribution having a plurality of fly lenses to adjust the intensity and distribution of light toward the reticle. The lens of claim 1, wherein the light intensity and light distribution adjusting lens comprises: A substantially disc shape having a central axis of rotation in the center, wherein a plurality of openings are formed along an inner circumference of the disc, each opening having a first adjustment lens coupled to a fly lens having a plurality of cell lenses; In the form of a substantially disk having a central axis of rotation in the center, a plurality of openings are formed along the inner circumference of the disk, the openings overlapping any one of the openings of the first adjustment lens, and the openings have a plurality of cells Exposure control device for semiconductor manufacturing, characterized in that consisting of a second adjustment lens coupled to the fly lens having a lens. The exposure apparatus of claim 2, wherein a chromium pattern having a predetermined area is formed on a specific cell lens of the selected specific fly lens. The exposure apparatus for manufacturing a semiconductor according to claim 3, wherein the chromium pattern is formed in a different cell lens for each fly lens. The exposure apparatus of claim 3, wherein the chromium pattern is formed to occupy 5 to 95% of the cell lens area. The exposure apparatus for manufacturing a semiconductor according to claim 3, wherein eight openings are formed in the first and second adjustment lenses. 7. The fly lens according to claim 6, wherein one of the openings is provided with a fly lens without a chrome pattern, the other opening is provided with a fly lens having a chrome pattern only in the center thereof, and the other opening has a chrome pattern only in the lower left side thereof. In the other opening, a fly lens with a chrome pattern is installed only in the upper right side, and in the other opening, a fly lens with a chrome pattern is installed only in the upper left side, and in the other opening, a fly lens with a chrome pattern only in the lower right side The lens is installed, and the other opening is provided with a fly lens with a chrome pattern on the whole except the circumference, and the other opening is equipped with a fly lens with a chrome pattern having a relatively large area on the whole except the perimeter. Exposure apparatus for semiconductor manufacturing. Determining whether the intensity and distribution of light emitted from the light source of the exposure apparatus for semiconductor manufacturing are nonuniform; When the intensity and distribution of the light are uneven, a plurality of openings are formed, and each opening is formed with a first adjustment lens provided with a fly lens capable of forming a chrome pattern in a specific cell lens, and a plurality of openings are formed. And a second adjustment lens provided with a fly lens in which a chrome pattern may be formed on a specific lens, and the plurality of openings provided in the first adjustment lens and the second adjustment lens may be combined in a number of possible cases and emitted from the light source. A method of adjusting the light intensity and light distribution of an exposure apparatus for manufacturing a semiconductor, the method comprising: lowering the intensity of the light thus obtained and making the distribution uniform.