KR20050016586A - Lighting element with luminescent surface - Google Patents

Abstract

The present invention relates to a lighting element (1) comprising a dielectric layer (5) of metal oxide having a front side and a back side, wherein the dielectric layer (5) extends between the front side and the rear side through the dielectric layer (5). An elongated hole 8 is arranged, the holes 8 are open to the front part, a base electrode 7 made from an electrically conductive material is arranged at the rear part, and the hole 8 is electrically The emitter rods 4 of conductive material are arranged, and the semi-transparent counter electrode layer 2 of electrically conductive material is arranged over the front surface of the dielectric layer 5, and the light emitting material layer ( 3) is arranged between the dielectric layer 5 and the base electrode layer 7. The counter electrode layer 2 is part of the layer system of the lighting element 1, wherein the dielectric layer 5 functions as a spacer separating the base electrode 7 from the counter electrode 2. .

Description

LIGHTING ELEMENT WITH LUMINESCENT SURFACE

The present invention relates to a lighting device having a light emitting surface, comprising a layer system comprising a base electrode layer made from an electrically conductive material and a translucent dielectric layer arranged directly or indirectly thereon, wherein the dielectric layer is The base having a front surface and a rear surface which is in contact with the base electrode, and extending holes are arranged between the front surface and the rear surface, the holes are open to the front surface, and wherein the base is electrically connected within the hole. Emitter rods of electrically conductive material connected to the electrodes are arranged, opposite the emitter rods are semi-transparent counter-electrodes of electrically conductive material, the emitter rods and the counter electrodes Between the light emitting materials There. The invention also relates to the manufacture and use of lighting elements.

Luminescent materials are solid, liquid, or gaseous materials that can be stimulated to emit light and are known in the art of manufacturing lighting devices. Luminescent materials are also known as luminophores or fluorescent materials, and can emit light by, for example, electromagnetic waves such as ultraviolet light or visible light, by electric fields, by electron beams, or by ions such as ionized gas atoms or molecules. It may be stimulated to diverge. Luminescence can also include fluorescence or phosphorescence.

Light emission through targeted stimuli of individual light spots is used, for example, on screens, while non-target stimuli of luminescent materials are used in lighting fixtures.

For example, in computer and TV screens, the target stimulus of the individual light emitting points occurs through the electron beam. In a discharge lamp, such as a fluorescent lamp, the luminescent material is stimulated to emit light through ultraviolet radiation. In general, gases are used that emit ultraviolet radiation through stimulation by an electron beam. Moreover, the light emitting material of the discharge lamp can also be directly stimulated by ionized gas atoms or molecules.

In certain applications, it is advantageous to have flat lighting elements that can be manufactured easily and inexpensively with a thin overall thickness if possible.

For example, flat lighting elements can be based on the cold cathode field emission principle. The flat illumination elements are identified by a cold cathode, which stimulates the luminophor to emit light by an external field effect. High emission currents rely on high field strengths followed by high electric fields. This can be done with a low potential difference by minimizing the distance between the emitter and the anode.

Thus, in order to keep the operating voltage applied to the cathode as low as possible, fine cathode points are provided on the cathode surface while at the same time the required high field strength is reached. An anode is disposed opposite the cathode and absorbs electrons emitted by the cathode points. As mentioned above, the distance between the anode and cathode points is minimized to achieve a high electric field.

There are various procedures depending on which cathode surface can be created with multiple cathode points. For example, EP 0351110 describes a procedure for the manufacture of cold cathode emitter surfaces, wherein an aluminum oxide surface is arranged with a plurality of elongated holes orthogonal to the major surface of the aluminum oxide layer, the holes being filled with metal, At least a portion of the aluminum oxide layer is removed to leave a surface with exposed cathode points that are no longer surrounded by the aluminum oxide layer.

WO 96/06443 describes a target cold cathode field emission arrangement for displays and screens. Porous membranes of aluminum oxide are applied to a layer system having an addressable cathode. The holes in the film are filled with a conductive metal forming an emitter cathode, wherein the emitter cathode is conductively connected to a target cathode and the front points of the cathode terminate at the level of the front side of the dielectric film. The anode is integrated into a porous screen placed at a distance from the cathode.

Known planar lighting elements, which act according to the principle of luminescence, generally have a relatively large overall thickness. In addition, it is expensive and complex to manufacture. Also in known planar lighting elements, the dimensional stability of the distance between the anode and the cathode is very small resulting in lower and non-uniform light emission.

1 is a cross-sectional view of a lighting element according to a first embodiment.

2 is a sectional view of a lighting element according to a second embodiment;

3 is a sectional view of a lighting element according to a third embodiment;

4 is a sectional view of a lighting element according to a fourth embodiment.

It is an object of the present invention to present a lighting element having a light emitting surface according to the principle of light emission, and also to make it easy and inexpensive while having a small overall thickness.

According to the invention, the counter electrode is part of a layer system and is arranged directly or indirectly in front of the dielectric layer as a layer covering the hole cavity, and the light emitting material is arranged between the emitter rod and the counter electrode layer. And the dielectric layer is a spacer separating the base electrode and the counter electrode.

The term "light" in the present application means electromagnetic radiation in the visible spectrum and radiation in the infrared and ultraviolet regions adjacent to the visible spectrum. Moreover, the term "light" also includes electromagnetic radiation of the soft X-ray spectrum.

Emitter rods are electron-emitting, threaded, wire-shaped or conical deposits within the aperture. The emitter rod is completely placed in the hole cavity.

In embodiment (A), the luminescent material is disposed directly or indirectly as a layer covering the hole opening on the front side of the dielectric layer. The counter electrode is disposed directly or indirectly on the exposed surface of the light emitting layer. The emitter rod ends at the hole opening.

In embodiment (B), the luminescent material is disposed inside the hole cavity between the emitter rod and the hole opening. Luminescent particles can be deposited inside the empty hole cavity to partially or completely fill the cavity.

In addition, the luminophors are partially or completely disposed in a layer on the exposed surface of the inner wall of the hole to form a central hole cavity. Here, the counter electrode is disposed directly or indirectly on the front surface of the dielectric layer. The luminoper may only be disposed on the exposed surface of the inner wall of the hole between the hole opening and the emitter rod. In this case, it is preferred that the luminoper be deposited after the deposition of the emitter rod. The luminoper may also be deposited before the emitter rod, thus also covering the hole inner wall section in the area where the emitter rod is later deposited.

Optionally, embodiments (A) and (B) can also be combined.

Luminescent particles arranged as a layer on the front surface of the dielectric layer have a size of up to 20 μm, preferably up to 10 μm. If the luminescent particles are deposited in the pore, it is preferred to use the luminescent particles in the form of nanoparticles, for example measuring a size of 100 nm or less. In this embodiment the luminescent particles can be deposited on the hole wall or can be deposited in the hole, for example, via an electrophoresis process.

The luminescent particles can also be deposited on the hole wall in the form of self-assembled monolayers (SAM), so that the luminescent particles are attached as functional groups on the SAM. The SAM is a tightly packed monolayer formed through absorption. SAM can be constructed based on, for example, phosphate esters. The SAM is, for example, 1-10 nm thick, preferably 1-5 nm thick. Further details on the structure or properties of SAM can be found in "Ullmann's Encyclopaedia of Industrial Chemistry, 6. Edition, 2001 Electronic Release, Ch. 1.5.1".

The light emitting layer may also consist of a layer formed in an environment controlled by sequential absorption of the SAM.

Thus, suitable compounds can be used as luminopers, as described, for example, in "Roempp, Chemical Lexicon, 10th Edition, 1997, p. 2389-2391". Suitable compounds include zinc sulfide. To make the zinc sulfide layer, the hole cavity can be coated with, for example, a zinc sulfate solution. Once the solution is dry and hydrogen sulfide gas is supplied to the pores, a zinc sulfide layer forms in the pores.

In a further development of the invention, the layered intermediate electrode can be disposed directly or indirectly over the front surface of the dielectric layer to surround the aperture opening but not to cover the aperture opening. The intermediate electrode thus has a perforated structure. The intermediate electrode can also be applied to Examples (A) and (B).

In the lighting element according to embodiment (A), in the case of further having an intermediate electrode, the light emitting layer is disposed directly or indirectly on the intermediate electrode layer and the counter electrode layer is disposed directly or indirectly on the light emitting layer, Therefore, an insulating layer may be disposed between the light emitting layer and the counter electrode and / or the intermediate electrode.

In the lighting device according to embodiment (B) further having an intermediate electrode, at least one further dielectric layer is disposed above the intermediate electrode and the counter electrode layer is disposed above the at least one additional dielectric layer.

The intermediate electrode is preferably an electrically conductive and reflective material layer, such as a metal (eg, aluminum, silver or titanium) applied by physical vapor deposition (PVD). The layer thickness of the intermediate electrode can be, for example, 20-150 nm.

The base electrode may be made from an anodizable metal (ie, a valve metal such as magnesium, titanium, or aluminum and alloys thereof). The base electrode is preferably made from aluminum or an aluminum alloy and in particular pure aluminum. The base electrode may be made from aluminum having a purity of at least 95% (at least 98.3%, in particular at least 99.5%). The base electrode is preferably made of a layer formed by coating on a substrate. The surface of the base electrode can also be formed by the substrate itself. The substrate may be made of flat elements such as plates, sheets, or films, or of any shaped body. The substrate may be produced, for example, by a rolling, extrusion, forging, or flow press process.

The dielectric layer can be, for example, a layer or film from a translucent metal oxide (aluminum oxide is preferred). The dielectric layer is preferably a layer prepared by anodizing oxidation of the metal substrate under a hole-forming environment.

The dielectric layer preferably comprises a porous layer, ie a porous layer to which a barrier layer forming the back side can be applied. Given a barrier layer, the barrier layer has a thickness that enables the flow of electrons between the base electrode and the emitter rod. It is preferred that the barrier layer has a thickness of less than 50 nm, in particular less than 30 nm. The barrier layer also includes an inclusion that increases its conductivity.

If the pores of the dielectric layer further comprise a luminescent material (Example (B)) or a plasma-forming gas (principle (ii), (iii)) in the emitter, the dielectric layer may have a thickness of, for example, 1 μm or more (2 μm). ), And in particular, a thickness of 5 µm or more and less than 150 µm (less than 100 µm, especially 70 µm or less) is preferred.

If the hole of the dielectric layer contains only an emitter and the luminescent material covers the hole opening (Example (A)), it is preferred that the dielectric layer has a small thickness as described above. The thickness of the dielectric is 20 mu m or less, preferably 10 mu m or less, and particularly preferably a thickness of 0.05 to 5 mu m. However, the thickness of the dielectric layer is preferably determined by the length of the emitter rod to extend in almost all lengths of the aperture.

According to the state of the art, nano-phosphors as luminescent materials can be produced in sizes of 50-100 nm. If such particles are introduced into the hole, the diameter of the hole at the front of the dielectric layer is preferably 50 nm, in particular 100 nm or more. It may be possible to relax this criterion when alternative luminescent materials or plasma-forming gases are introduced into the apertures.

If a metallic intermediate electrode is deposited, for example when vacuum deposited on the surface of the dielectric layer, the amount of deposit is preferably sufficient to adequately provide a conductive surface film, but not enough to block the passage of electrons emitted by sealing the aperture. . However, if the intermediate electrode is applied, for example by vacuum deposition, the pore diameter at the front of the dielectric layer below the intermediate electrode is preferably 10 nm or more (especially 50 nm or more), and less than 200 nm (especially 90). <Nm) is preferred.

The pore diameter at the front of the dielectric layer is preferably 10-250 nm or more.

The holes are arranged to be substantially orthogonal to the front surface of the dielectric layer. The dielectric layer has, for example, a hole density of at least 10 ⁸ per cm 2. The separation between the emitters is preferably 0.05-10 μm. Preferably, the dielectric layer has a thickness greater than the average diameter of the holes. The density and diameter of the holes can be made to vary with the thickness of the dielectric layer.

The dielectric layer also functions as a spacer separating the base electrode and the counter electrode. The distance between the base electrode and the counter electrode is relatively small, so that the lighting element can be operated at a relatively low voltage. To reduce power requirements, field emission should be less than 100V / μm field strength, less than 300V / μm preferred, particularly less than 200V / μm field strength. This separates the emitter rod and the counter electrode if there is an intermediate electrode.

The aperture includes a threaded or wire-shaped emitter rod that is electrically conductive to the base electrode. If the dielectric layer does not include a barrier layer, electrical contact between the base electrode and the emitter rod is made directly.

The emitter rod is preferably made from an electrically conductive material such as cobalt, nickel, or other suitable metal and deposited in the hole by electroplating. The emitter rod is preferably minimized in size and in particular minimized in length. Thus, the length of the emitter rod is preferably on average less than 10 μm, in particular less than 5 μm (less than 1 μm is most preferred). If the emitter rod is too large, it tends to scatter and absorb the light produced. Another reason that the length of the emitter rod is minimized is to control the uniformity of the length of the emitter rod for uniformity of light emission.

The emitter rod may include an emitter point at an exposed end made from refractory metal that is resistant to oxidation. The refractory metal may be gold, molybdenum, tungsten, palladium, platinum, or other difficult metals.

The emitter rod is suitably located within the hole cavity and below the front surface of the dielectric layer. The emitter rod (applicable to the emitter point) is preferably extended over a distance shorter than the hole length. In an embodiment of the present invention, when the dielectric layer comprises only emitters and the luminescent material exceeds the front surface (Example (A)), the emitter rod is preferably extended very close to the front surface, but two Preference is given to not being closer than the hole diameter.

The counter electrode is given as a translucent and electrically conductive layer consisting of a translucent conductive coating. The layer is preferably made from or comprises doped tin oxide, such as indium tin oxide (ITO) or non-stoichiometric zinc oxide. Indium tin oxide is electrically conductive and translucent. In addition, conductor paths may be provided on the empty surface of the translucent electrically conductive layer to improve the supply and / or consumption of current. The conductor path has a better conductivity than the translucent layer below. The conductor path may for example be made from a metal conductor having a thickness of less than 0.1 mm. The conductor paths can be arranged in a grid and have a mesh width of 5-10 mm.

The counter electrode may be deposited in a vacuum coating process or by pyrolysis of tin oxide.

In addition, one or more translucent protective layers can be disposed on the counter electrode, the counter electrode being deposited by, for example, a vacuum coating process. In particular, the translucent protective layer may be a ceramic layer having a compound having a chemical formula of SiO x or AlyO z, where x is 1 to 2 and y / z is a number from 0.2 to 1.5. The protective layer can also be made with an external sol-gel coating.

The thickness of the layer can for example be 5-500 nm for vacuum deposition, with 5-200 nm being especially preferred. The thickness of the layer can be large up to 1-2 μm. The thickness of the layer also acts to seal the holes to prevent gas exchange or to maintain a continuous vacuum.

In practical applications, the counter electrode can fulfill the function of a sealing layer having the above mentioned properties.

The lighting element according to the invention can operate according to three different principles (i), (ii) and (iii). The lighting element operating according to principle (i) is a cold cathode field emission device. The base electrode is here a base cathode, the emitter rod is an emitter cathode and the counter electrode is an anode. The hole cavity is completely or partially empty. The luminescent material is stimulated by an electron beam emitted by the emitter rod when a direct current voltage is applied. The intermediate electrode, which is given in practical application, is a gate electrode, by which the pre-acceleration voltage is set by this gate electrode, which can accelerate electrons. It is preferred that the gate electrode has a lower positive potential than the anode. Principle (i) is preferably applied to embodiment (A) of the present invention.

Lighting elements operating according to principle (ii) are stimulated by UV radiation. The orifice cavity comprises a plasma-forming gas and preferably comprises an inert gas, in particular argon, neon, krypton, helium or mixtures thereof. These gases are ionized in the orifice cavity by applying an alternating voltage between the electrode and the counter electrode, thus releasing UV radiation through the plasma due to the gas evolution process. UV radiation causes light to be emitted by stimulating the light emitting material. The luminescent material according to principle (ii) can also be directly stimulated by the ionized gas atoms or molecules.

The intermediate electrode, which is given in practical application, functions to ignite the plasma, that is, the intermediate electrode has the function of a starter electrode to initialize the plasma, while the counter electrode provides an alternating current for continuous operation. Preferably, the intermediate electrode has a lower potential than the counter electrode.

The lighting element operating according to the principle is based on electroluminescence, that is, the luminescent material is stimulated by applying an electric field. The light emitting material may include a light emitting polymer, a metal compound, a nonmetallic compound, or an organometallic compound. Some are referred to as light emitting diodes (LEDs) or organic light emitting diodes (OLEDs).

The above principles (ii) and (iii) are preferably applied to embodiment (B) of the present invention.

In a particular embodiment of the invention, the lighting element has a matrix addressing of the base electrode and / or counter electrode, in order to guide the light emission of each surface point or surface section. Single holes with emitter rods are the so-called controllable emission centers.

The base electrode and the counter electrode may be arranged, for example, in the form of a grid-shaped conductor path. Addressable systems are of particular use for display.

The anode layer can optionally be applied so that only a specific emission center is activated. The selective application of the anode layer can be realized by a printing process such as lithography or by laser aberration of the anode layer. This allows to "write in" the release point at the designated location. Selective application of the anode layer allows selection of macro regions of multiple active emission centers to form a pattern that can be addressed by matrix-shaped addressing of the anode. In addition, the selective application of the anode layer allows decoupling of the emission centers from the overall structure, which is the case when the centers are wrong, for example the centers are shortened during use or production.

In order to use the illuminating device according to the invention, the complex addressing system of the electrode at the microscope level can be perceived when the luminescent material in the illuminating device is simultaneously stimulated over a large range by the application of a voltage, ie the human eye can perceive it. May be omitted when stimulated over a surface section.

A light emitting device that does not specify light emitting particles may be manufactured by the following steps as an example.

a) providing a base electrode made of aluminum,

b) anodizing the base electrode to provide a porous dielectric anodized aluminum,

c) providing a wire-shaped emitter rod in a hole in the dielectric layer having a front end and a rear end, wherein the front end of the emitter rod is below the front surface of the dielectric layer.

Including steps

i) providing a layer of luminescent material in front of the holes and / or the dielectric layer, before and after deposition of the emitter rod,

Ii) directly or indirectly providing a counter electrode layer on the front surface of the dielectric layer

Characterized by steps.

The dielectric layer is preferably prepared by anodization directly from the aluminum surface of the base electrode, such that anodization results in a porous oxide layer under suitable electrochemical conditions, such as, for example, redissolving conditions.

The diameter and spacing of the holes depends on the anodization voltage. For example, when an X voltage is applied, the diameter of the hole is approximately X nm and the hole spacing is approximately 2.5 ^* X. There is a barrier layer of approximately X nm between the bottom of the holes and the metal / oxide interface. The overall thickness of the porous anodic oxide layer increases coulombically. Thus, anodization conditions, including time, voltage, electrolyte formulation, temperature, and the like, can be selected by known methods, resulting in a specific thickness of anodized oxide film comprising a uniform array of holes of selected diameter and spacing.

The base electrode layer is anodized in a suitable electrolyte under a direct or alternating current condition, preferably with a voltage of less than 200V, thereby producing a porous aluminum oxide layer. It is preferred that phosphoric acid or oxalic acid be used as electrolyte. Anodization in phosphoric acid or oxalic acid makes it possible to make holes with large diameters, which facilitate the deposition of luminescent materials within the hole cavities.

In addition to the porous layer, the anodization also creates a barrier layer over the base electrode. Since the barrier layer is too thick for electrodeposition of metal into the pores in a neutral pH solution, the barrier layer is thinned or removed to make it suitable for electrodeposition. This is accomplished by the anode film recovering at low voltages of approximately 30V or less. Such recovery may be in phosphoric acid or sulfonic acid. EP 178 831, for example, describes a voltage reduction technique that will thin and permanently remove the barrier layer.

In a further step, the emitter rod is deposited in the hole, for example by electrolyte precipitation. Refractory metal rods may be produced by galvanic displacement of non-refractory metal deposits in the holes.

The surface of the aluminum oxide layer may then be polished to remove all metal deposits from the surface.

In a further subsequent step, the threaded emitter rod deposited in the hole is electrochemically recombined so that the points of the deposit are placed in the hole cavity and below or behind the surface of the aluminum oxide layer.

If desired, the aforementioned emitter point can also be deposited on the exposed surface of the emitter rod, which in practical applications, for example, by electron beam vaporization, by electrochemical deposition or in non-vacuum chamber. -By galvanic replacement of the refractory metal material. In subsequent electrochemical procedures, excess metal deposits deposited by electron beam vaporization on the aluminum oxide layer can be removed.

In order to make the lighting element according to embodiment (B), a luminescent material is deposited in said open hole cavity. The luminescent material is preferably deposited on the hollow inner wall.

In order to make the lighting element according to embodiment (A), the luminescent material is deposited directly or indirectly on the front surface of the dielectric layer.

In subsequent further steps, an ITO or nonstoichiometric zinc oxide layer is deposited directly or indirectly on the dielectric layer, for example by a vacuum coating procedure.

To improve current flow, a conductor path can be deposited over the ITO or zinc oxide layer.

In addition, one or more translucent protective layers (especially ceramic protective layers) may be deposited on the counter electrode, for example by gas or vapor phase deposition in vacuum or via PVD. The counter electrode and one or more protective layers can be deposited, for example, in a continuous vacuum thin layer process and in particular in a straight series.

In a particular embodiment of the invention, an intermediate electrode can be deposited directly on the dielectric layer.

The individual procedure is preferably a continuous process step, where the base electrode is a piece of aluminum present as a coil.

In the operation of the lighting element according to the invention, the light emitted by the light emitting material in the direction of the counter electrode appears directly through the ITO layer while the light emitted in the direction of the base electrode is the base electrode and / or Reflected by the metal surface of the intermediate electrode. Because the dielectric layer is translucent, most of the light emitted is directed directly or indirectly to the outside as desired.

Due to the dielectric layer acting as a spacer, the lighting device has an accurate and specified distance (very uniform over the surface) between the base electrode and the counter electrode. The uniform distance between the base electrode and the counter electrode and the uniformly applied electric field result in uniform light emission.

The lighting elements 1, 11, 21, 31 in FIGS. 1, 2, 3 and 4 comprise a highly reflective base electrode 7, 17, 27, 37 of aluminum, on which a porous dielectric layer of aluminum oxide (5, 15, 15, 35) are arranged. If necessary (but not absolutely necessary), the dielectric layer has barrier layers 6, 16, 26, 36 having a thickness of less than 30 nm. Inside the apertures 8, 18, 28, 38, a metallic galvanic deposited image conductively connected to the base electrodes 7, 17, 27, 37 and having emitter points 9, 19, 29, 39. There are rotor rods 4, 14, 24 and 34. Above the front surface of the dielectric layers 5, 15, 25, 35 are, for example, ITO (indium tin oxide) counter electrode layers 2, 12, 22, 32 deposited by a vacuum coating process.

The first version of embodiment (B) is shown in FIG. 1. The light emitting layer 3 is arranged on the hollow inner wall to form a hole cavity in the center. The counter electrode 2 is applied directly to the entire surface of the dielectric layer 5.

The second version of embodiment (B) is shown in FIG. A portion of the recess of the empty hole is filled with the luminescent material 13. If necessary, the entire empty hole depression 18 may be filled with the light emitting material 13. The counter electrode 2 is applied directly to the entire surface of the dielectric layer 5.

3 shows a first version of embodiment (A). The light emitting layer 23 covering the hole 28 is applied directly to the entire surface of the dielectric layer 25. The counter electrode 22 is directly applied to the light emitting layer 23.

The embodiment of FIG. 4 shows a second version of embodiment (A). The perforated layer of the intermediate electrode 40 not covering the hole cavity is applied directly to the front surface of the dielectric layer 35, and the light emitting layer 33 covering the hole 38 is applied to the intermediate electrode 40. Applied directly. The counter electrode 32 is directly applied to the light emitting layer 33.

In Figures 1-4 the illuminating element can be used for operation according to principle (i) "cold cathode field emission in direct current conditions", wherein electron emission is produced by voltage application. In this case the hole cavity is completely or partially empty. 1-4, the lighting element can be used in operation according to principle (ii) "gas discharge under alternating current conditions". In this case the holes are filled with a plasma-forming gas.

The lighting device according to the present invention is characterized in that the production cost is reduced because all the processes can be made in large quantities. Anodizing, galvanishing (eg electroplating, electro-depositing) and electrophoresis are already in commercial use. In addition, vacuum coating procedures such as continuous coating procedures have been established for industrial mass use.

The lighting element according to the invention can be used for lighting, without specific addressing of each light emitting point. The lighting element according to the invention is preferably flat or has a large surface area and can be used on the walls or facades of buildings or inside vehicles such as sea, land and airplanes. The lighting element according to the invention can be used in a large area. In addition, the lighting element according to the present invention may be used as a background light of a liquid crystal crystal display (LCD), or may be used in a self-illuminating display or an advertising panel or in a self-illuminating display or a sign.

The lighting element according to the invention can also be used in the form of a three-dimensional element. They emit in many directions. This is possible by anodizing from different sides of the aluminum element.

The lighting element according to the invention with specific addressing of individual light emitting points can be used, for example, in the form of a computer or a TV screen or a flat display screen.

Claims (18)

In the lighting elements 1, 11, 21, 31 having a light emitting surface, the lighting element is directly or indirectly on the base electrode layer 7, 17, 27, 37 and the base electrode layer made of an electrically conductive material. A layer system having translucent dielectric layers 5, 15, 25, 35 arranged in a manner, wherein said dielectric layers 5, 15, 25, 35 have a front and a back facing the base electrode and the front An array of holes 8, 18, 28, 38 extending between the rear and the rear surface, the holes 8, 18, 28, 38 being open to the front surface and having an emitter of electrically conductive material. Rods 4, 14, 24, 34 are arranged in the holes, wherein the emitter rod is connected to the base electrode in an electrically conductive manner, and on the opposite side of the emitter rod a translucent counter of electrically conductive material With electrodes The light emitting device is disposed between the emitter rod and the counter electrode. The counter electrodes 2, 12, 22, 32 are layers covering the hole cavities 8, 18, 28, 38 as part of the layer system and are disposed directly or indirectly in front of the dielectric layer, and Light emitting materials 3, 13, 23, 33 are disposed between the emitter rods 4, 14, 24, 34 and the counter electrode layers 2, 12, 22, 32, and the dielectric layer 5 ) Is a spacer for separating the base electrode (7, 17, 27, 37) and the counter electrode. 2. The method according to claim 1, wherein the emitter rods 4, 14, 24, 34 extend at shorter distances than the hole length and in particular not extend closer than two hole diameters to the front surface of the holes. Illuminating element, characterized in that. 3. The light emitting material according to claim 1 or 2, wherein the light emitting material is disposed as a layer (23) covering the hole cavity (28) directly or indirectly on the front surface of the dielectric layer (25). And 22) is arranged directly or indirectly on the exposed surface of the light emitting layer (23). The method according to any one of claims 1 to 3, wherein the luminescent material (3, 13) is disposed in the hole cavities (8, 18) between the emitter rods (4, 14) and the hole openings. Lighting element characterized in that. 5. The device according to claim 1, wherein the luminescent material is disposed completely or partially as a layer 3 on the exposed surface of the inner wall of the hole to form a central hole cavity. 6. Lighting element. 6. The intermediate electrode 40 according to claim 1, wherein an intermediate electrode 40 of a conductive material (preferably metal) surrounding the hole cavity is disposed directly or indirectly on the dielectric layer 35. And the counter electrode is disposed above the intermediate electrode 40, wherein at least one light emitting layer 33 and / or an additional dielectric layer covering the hole opening is disposed between the counter electrode 32 and the intermediate electrode 40. Illumination element, characterized in that arranged. 7. The lighting device as claimed in claim 1, wherein the dielectric layer is a anodized layer of metal oxide, in particular aluminum oxide. 8. 8. The method according to any one of the preceding claims, wherein the base electrodes (7, 17, 27, 37) are made of aluminum or aluminum alloy, and the dielectric layers (5, 15, 25, 35) An aluminum oxide alloy is preferred, in particular an aluminum oxide alloy produced by anodizing directly from the base electrode. The method according to claim 1, wherein the counter electrodes 2, 12, 22, 32 comprise or consist of a semi-transparent conductive electrode (indium tin oxide (ITO) is preferred) layer. Lighting element characterized in that. 10. The method according to any one of the preceding claims, wherein the lighting element is a cold cathode field emission device and the base electrodes 7, 17, 27, 37 are base cathodes and the emitter rods 4, 14 , 24, 34 are emitter cathodes and the counter electrodes 2, 12, 22, 32 are anodes and the light emitting materials 3, 13, 23, 33 are stimulated by an electron beam emitted from the emitter rod. And the hole cavity (8, 18, 28, 38) is completely or partially emptied. 10. The cavity of any of the preceding claims, wherein the orifice cavity (8, 18, 28, 38) comprises a plasma-forming gas, in particular an inert gas of argon, neon, and / or helium. Preferred, and the luminescent material (3, 13, 23, 33) is stimulated under a gas discharge process under alternating current conditions. 10. The lighting device according to any one of claims 1 to 9, wherein the lighting device is operated on the basis of electroluminescence, whereby the luminescent materials 3, 13, 23, 33 are stimulated by application of an electric field. device. 13. A method according to any one of claims 1 to 12, wherein at least one translucent protective layer is arranged on the counter electrodes 2, 12, 22, 32, wherein the protective layer acts to seal the pores. Lighting element, characterized in that it prevents replacement or maintains a constant vacuum. 14. A display according to any one of the preceding claims, wherein the illuminating element has a matrix addressing of the base electrode and / or counter electrode to designate the light emission direction of a point or surface section of an individual surface. Lighting device, characterized in that to build. In the method for manufacturing a lighting device, the method a) providing base electrodes 7, 17, 27, 37 made of aluminum, b) anodizing the base electrode to provide a porous dielectric anodic aluminum oxide layer (5, 15, 25, 35), and c) providing a wire-shaped emitter rod 4, 14, 24, 34 in a hole in the dielectric layer having a front end and a rear end, wherein the front end of the emitter rod is located below the front surface of the dielectric layer. Comprising the steps, the method comprising i) providing a layer of luminescent material in front of the holes 8, 18, 28, 38 and / or the dielectric layer before and after deposition of the emitter rod, Ii) providing the counter electrode layers 2, 12, 22, 32 directly or indirectly in front of the dielectric layer; Method for manufacturing a device for lighting, characterized in that it comprises the steps. 16. A method according to claim 15, wherein the exposed surface of the inner wall of the hole is completely or partially coated with a luminescent material (3). 17. The method according to claim 15 or 16, wherein the counter electrode comprises or consists of an indium tin oxide (ITO) layer, and the counter electrodes (2, 12, 22, 32) are applied to the dielectric layer in a vacuum coating procedure. Method for producing a lighting device, characterized in that applied. The lighting elements 1, 11, 21, 31 are used as flat lighting elements on the walls and facades of buildings, or as background light sources in liquid crystal crystal displays (LCDs) or self-illuminating displays or signs. Lighting element, characterized in that.