KR20050011061A - Vertical furnace used to manufacture semiconductor device - Google Patents

Abstract

PURPOSE: A vertical furnace for manufacturing a semiconductor device is provided to obtain uniform thickness from a thin film by preventing a fluid supply line from being moved to and fro due to external force using a plurality of protrusions and grooves as a motion preventing mechanism. CONSTITUTION: A vertical furnace includes a fluid supply line(200), a fluid spraying line(190), a tube flange(170) with a spraying line inserted port and a fluid exhaust port for exhausting a fluid of a tube to the outside, a first connecting flange prolonged from the spraying line inserted port, a connecting pipeline(131) for connecting the first connecting flange with the fluid supply line, a clamp(135) for fixing a first connection between the first connecting flange and the connecting pipeline, a connecting unit for fixing a second connection between the first connecting flange and the fluid supply line, and a motion preventing mechanism. The motion preventing mechanism is used for preventing the fluid supply line from being moved to and fro due to external force. The motion preventing mechanism includes at least one motion preventing protrusion(134) and at least one motion preventing groove(142) of a first fixing washer(141).

Description

Vertical furnace used to manufacture semiconductor device

The present invention relates to a semiconductor manufacturing apparatus for manufacturing a semiconductor device, and more particularly to a vertical furnace for manufacturing a semiconductor device for forming a predetermined thin film on a plurality of wafers collectively.

Generally, a wafer for manufacturing a semiconductor device is manufactured as a chip, which is a semiconductor device, by repeatedly performing a plurality of unit processes such as a photo process, an etching process, a metal wiring process, and a thin film deposition process.

Among these processes, a thin film deposition process is a process of forming or depositing a thin film having a predetermined thickness on a wafer. The thin film deposition process is classified into physical vapor deposition and chemical vapor deposition according to the thin film deposition method. In this case, chemical vapor deposition is widely used in recent years as a method of decomposing a gaseous compound and then depositing a thin film having a predetermined thickness on a wafer by a predetermined chemical reaction.

On the other hand, such chemical vapor deposition is AP CVD (Atmospheric Pressure Chemical Vapor Deposition) where chemical vapor deposition is performed at atmospheric pressure in accordance with the conditions in which chemical reactions occur in order to deposit a thin film again, and LP CVD (Low Temperature Chemical Vapor Deposition) is performed. Pressure Chemical Vapor Deposition) and PE CVD (Plasma Enhanced Chemical Vapor Deposition) where chemical vapor deposition is performed by plasma in a low pressure state.

Here, the case of the LP CVD method is mainly performed using a vertical furnace for manufacturing a semiconductor device, hereinafter, an example of a conventional vertical furnace for manufacturing a semiconductor device will be described in detail.

Conventional semiconductor device type vertical furnace is provided with a predetermined space sealed to the thin film deposition, the tube is open at the lower end, and the predetermined length is extended in the tube and a predetermined reaction medium or a predetermined reaction liquid (hereinafter referred to as a tube). Located at the upper side of the pedestal, a fluid spray pipe that supplies the reaction fluid, a heater that heats the inside of the tube to a certain temperature for the process, a pedestal that selectively seals the lower end of the tube, And a wafer boat in which a plurality of wafers are sequentially aligned, a tube flange interposed between the tube and the pedestal, and allowing a reaction fluid to flow into the tube and a reaction fluid to flow out of the tube. It comprises a central control unit for controlling the overall vertical furnace for semiconductor device manufacturing.

Therefore, when a plurality of wafers that have undergone the preceding process are aligned and seated on a wafer boat, the vertical type furnace for manufacturing a conventional semiconductor device introduces the wafer into the tube by moving the wafer boat upward, and after the inside of the tube Will be sealed.

Then, when the sealing of the tube is completed, the heater heats the inside of the tube, and the central controller evenly sprays the reaction fluid supplied from the outside into the tube through the fluid injection tube. Accordingly, a thin film is deposited uniformly on a plurality of wafers arranged inside the tube by a predetermined chemical reaction.

On the other hand, in manufacturing such a semiconductor device, it is very important to deposit a thin film of uniform thickness on the wafer. Therefore, the worker continuously checks and checks each part of the vertical furnace for semiconductor device manufacturing.

In particular, in order to continuously and uniformly deposit a predetermined thin film on a plurality of such wafers, the injection of the reaction fluid is very important, and the operator can continuously check and check the fluid injection pipe that evenly distributes the reaction fluid. do.

However, since the vertical end of the conventional semiconductor device manufacturing is connected without a separate flow preventing means in the outer end of the fluid injection pipe is connected to the external fluid supply line often occurs when the connection portion of the external fluid supply line flows to the left and right. In addition, the left and right flow of the external fluid supply line has a problem that it affects to some extent to flow from side to side to the fluid injection pipe inside the tube.

Therefore, the fluid injection pipe that flows from side to side in part due to this effect causes a problem that the reaction fluid cannot be evenly sprayed on the whole part of the tube, and the problem of the reaction fluid is a non-uniform deposition of the deposited film thickness. Problems that lead to this occur.

In particular, the fluid injection pipe and the fluid supply line connected to the vertical furnace vertical furnace for manufacturing a semiconductor device are made of a Qualz material and a Teflon material, respectively, and the contact portions of these two materials cannot be fixed correctly. There is a problem that often causes the same left and right flow.

Accordingly, the present invention has been made in view of such a problem, and an object of the present invention is to provide a vertical furnace for manufacturing a semiconductor device which can prevent the left and right flow of the fluid injection pipe in advance.

1 is a cross-sectional view showing an embodiment of a vertical furnace for manufacturing a semiconductor device according to the present invention.

Figure 2 is an exploded view showing an enlarged portion A of the vertical furnace shown in FIG.

3 is a perspective view illustrating a coupling relationship between a joint pipe of a vertical furnace and a first fixing washer coupled thereto according to the present invention.

**** Explanation of symbols for the main parts of the drawing ****

100: vertical furnace 120: tube

124: injection tube insert 126: fluid outlet

131: joint pipe 135: clamp

140: first fixing nut 141: first fixing washer

143: nipple 145: second fixing nut

146: second fixing washer 150: heater

160: wafer boat 170: tube flange

180: pedestal 190: fluid injection pipe

Vertical furnace for manufacturing a semiconductor device according to the present invention for realizing such an object is provided with a predetermined space closed and a tube having a lower end opening, a heater for heating the inside of the tube at a predetermined temperature, and optionally sealing the lower end of the tube. A pedestal, a wafer boat positioned at the upper side of the pedestal, and a plurality of wafers aligned, a predetermined length extending from the outside of the tube to the inside of the tube, and a predetermined reaction from an external fluid supply line to deposit a predetermined thin film on the wafer. A tube flange having a fluid injection tube for supplying a fluid to the inside of the tube, an injection tube insertion hole interposed between the tube and the pedestal, and a fluid discharge port for discharging the fluid inside the tube to the outside; By connecting the first connection flange and the first connection flange and the fluid supply line extending a predetermined length to the outside of the insertion pipe insertion Is a clamp for fixing the joint of the joint pipe, the first connection flange and the joint pipe, a coupling unit for fixing the joint of the joint pipe and the fluid supply line, and a fluid connected to the joint pipe. It includes a flow preventing means for preventing the flow of the supply line.

Here, the joint pipe preferably includes a second connection flange corresponding to the first connection flange and a cylindrical portion connected to the fluid supply line.

The coupling unit may be interposed between a first fixing nut (Nut) inserted into a cylindrical portion, a second fixing nut fitted into a fluid supply line, and a first fixing nut and a first fixing nut. A nipple having a spiral formed on an outer circumferential surface thereof to be screwed together, a first fixing washer fitted between the first fixing nut and the nipple, and a second fixing washer fitted between the second fixing nut and the nipple It is preferable to.

In addition, the flow preventing means is preferably composed of at least one or more flow preventing projections formed on the outer peripheral surface of the cylindrical portion, and at least one or more flow preventing grooves formed on the inner peripheral surface of the first fixing washer so that the flow preventing projections are fitted.

On the other hand, the flow preventing projection is preferably formed of a key type (Key type), the flow preventing groove is preferably formed of a key groove type to which the flow preventing projection is fitted.

Hereinafter, an embodiment of a vertical furnace 100 for manufacturing a semiconductor device according to the present invention will be described in detail with reference to FIGS. 1 to 3.

First, referring to FIG. 1, a vertical furnace 100 for manufacturing a semiconductor device according to an embodiment of the present invention includes a predetermined space sealed to allow thin film deposition and a tube 120 having a lower end thereof, and a tube 120. A predetermined length is extended from the outside to the inside of the tube 120 and the fluid injection tube 190 for supplying a predetermined reaction fluid into the tube 120, and the heater for heating the inside of the tube 120 to a predetermined temperature required for the process ( 150, a pedestal 180 for selectively sealing the lower end of the tube 120, a wafer boat 160 positioned above the pedestal 180 and having a plurality of wafers 90 sequentially aligned; Interposed between the tube 120 and the pedestal 180 and the tube flange 170 and the inside of the tube 120 to enable the reaction fluid flow into the tube 120 and the reaction fluid outflow inside the tube 120, etc. Reaction fluid supplied from the outside and the fluid injection pipe 190 is formed to extend a predetermined length Central control unit (not shown) for overall control of the injection pipe connecting device 130 for coupling the fluid supply line 200 to supply the fluid injection pipe 190 and the vertical furnace 100 for manufacturing a semiconductor device It is configured to include.

More specifically, the tube 120 has a predetermined space sealed to allow thin film deposition, and is formed in a dome shape and has an outer tube 123 having an open lower side, and an outer tube 123 inside. Interposed on the wafer boat 160 is composed of an inner tube 122 formed of a hollow cylindrical type.

And, the tube flange 170 is interposed between the tube 120 and the pedestal 180 serves to enable the reaction fluid inflow into the tube 120 and the reaction fluid outflow inside the tube 120. The upper and lower surfaces are formed in a hollow cylindrical type, but one side of the non-opening injection tube insertion hole 124 is formed, and the other side of the non-opening side has a fluid inside the tube 120. The fluid discharge port 126 discharged to the outside is formed.

Accordingly, the wafer boat 160 in which the plurality of wafers 90 are aligned is introduced into the tube 120 through the bottom surface of the tube flange 170, and the fluid injection tube 190 is the injection tube insertion hole 124. Is connected to the external fluid supply line 200 through.

On the other hand, the injection pipe connecting device 130 for coupling the fluid injection pipe 190 and the fluid supply line 200 with each other is the tube flange 170 into which the outside of the injection pipe insertion hole 124, that is, the fluid injection pipe 190 is fitted The first connection flange 125 formed on one side of the outer side and, interposed between the first connection flange 125 and the external fluid supply line 200, the first connection flange 125 and the fluid supply line 200 The joint pipe 131 connecting the connection, the clamp 135 to securely connect the connection portion of the first connection flange 125 and the joint pipe 131, the joint pipe 131 and the fluid supply line 200 It consists of a coupling unit for firmly fixing the connection portion of the, and the flow preventing means for preventing the left and right flow of the fluid supply line 200 connected to the joint pipe 131.

Specifically, the first connection flange 132 is formed on the outer side of the injection pipe inserting hole 124, the fluid injection pipe 190 inserted in the injection pipe inserting hole 124 easily with the external fluid supply line 200 It acts as an intermediary to make the connection.

In addition, the joint pipe 131 serves to interconnect the first connection flange 125 and the fluid supply line 200. One end is connected to the first connection flange 125, and the other end is fluid supply. Connected to line 200. Therefore, at one end of the joint pipe 131 connected to the first connection flange 125, a second connection flange 132 corresponding to the first connection flange 125 is formed, and is connected to the fluid supply line 200. At the other end of the joint pipe 131 is formed a cylindrical portion 133 facing the fluid supply line 200.

In addition, the first coupling flange 125 and the clamp 135 for firmly fixing the second connection flange 132 of the joint pipe 131 connected to the first coupling is fitted in the direction of the first connection flange (125). Plates 136, a second coupling plate 137 fitted in the direction of the second connection flange 132, and coupling bolts for fixing the first and second coupling plates 136, 137 mutually. It is composed of Accordingly, the worker inserts through the coupling holes (Hole, 138) formed in the first and second coupling plates (136, 137) using the coupling bolt 139 of the first connection flange 125 and the joint pipe 131, respectively. The second connection flange 132 is to be firmly fixed.

In addition, the coupling unit for firmly fixing the connecting portion of the joint pipe 131 and the fluid supply line 200 is fitted into the cylindrical portion 133 of the joint pipe 131, the first fixing nut 140 of a somewhat larger diameter And, it is fitted to the end of the fluid supply line 200 is interposed between the second fixing nut 145 of a slightly smaller diameter, and the two fixing nuts (140,145), one end is screwed to the first fixing nut (140) The other end is screwed to the second fixing nut 145 and the nipple 143 formed of a hollow bolt type, and the first fixing washer 141 that is fitted between the first fixing nut 140 and the nipple 143 And a second fixing washer 146 fitted between the second fixing nut 145 and the nipple 143. Therefore, even if the diameter of the joint pipe 131 and the fluid supply line 200 are different from each other, by using the coupling unit according to the present invention will be able to be firmly fixed to each other.

On the other hand, the flow preventing means for preventing the left and right flow of the fluid supply line 200 connected to the joint pipe 131 is at least one flow preventing projection 134 formed on the outer peripheral surface of the cylindrical portion 133 of the joint pipe 131, The flow preventing protrusion 134 is formed to be fitted is composed of a flow preventing groove 142 formed on the inner peripheral surface of the first fixing washer 141. Therefore, when the joint pipe 131 and the fluid supply line 200 are coupled to each other, the first fixing washer 141 is fitted in the direction of the cylindrical portion 133 of the joint pipe 131, in which case the joint pipe 131 The flow preventing protrusion 134 formed in the) is to be fitted into the flow preventing groove 142 formed in the first fixing washer 141. The fluid supply line 200 connected to the joint pipe 131 is to be completely blocked to flow to the left and right by such a flow preventing means.

Here, the flow preventing protrusion 134 is preferably formed of a key type, the flow preventing groove 142 is preferably formed of a key groove type. In addition, reference numeral 144 illustrates the spiral 144 formed on the outer circumferential surface of the nipple 143.

Hereinafter, the operation and effects of the vertical furnace 100 for manufacturing a semiconductor device of the present invention configured as described above will be described in detail.

First, when the plurality of wafers 90 having undergone the preceding process are aligned and seated on the wafer boat 160 on the pedestal 180, the pedestal 180 moves the wafer boat 160 upward to move the wafer 90 upward. The tube 120 is introduced into the tube 120, and after the tube 120 is brought into close contact with the tube flange 170, the tube 120 is sealed.

Subsequently, when the sealing of the tube 120 is completed, the heater 150 heats the inside of the tube 120, and the central controller transmits the reaction fluid supplied from the outside to the tube 120 through the fluid injection pipe 190. Spray it evenly inside. Therefore, the thin film by a predetermined chemical reaction is deposited on the wafer 90 arranged in the tube 120 with a uniform thickness.

In this case, the fluid supply line 200 connected to the fluid injection pipe 190 of the vertical furnace 100 for manufacturing a semiconductor device often includes a fluid supply line 200, a fluid supply line 200, a fluid injection pipe 190, and the like. A predetermined external force is applied to allow the connection of to flow from side to side.

Therefore, the conventional vertical device for manufacturing a vertical device is not often provided with a separate flow preventing means, the fluid supply line or the connection portion of the fluid supply line is often caused by the predetermined external force has often occurred, the semiconductor according to the present invention Since the vertical furnace 100 for manufacturing the device is provided with a flow preventing means for preventing the left and right flow of the fluid supply line 200 is not flowing at all by such a predetermined external force.

Therefore, all problems such as deposition of a film having a non-uniform thickness generated by the flow of the conventional fluid supply line are all solved.

As described above, the vertical path for manufacturing a semiconductor device according to the present invention is provided with a flow preventing means for preventing the left and right flow of the fluid supply line, even if a predetermined external force to flow the fluid supply line as in the prior art There is an effect that no flow of the supply line occurs at all.

Therefore, all problems such as deposition of a film having a non-uniform thickness generated by the flow of the conventional fluid supply line are all solved.

Claims (3)

The tube is provided with a predetermined space closed, the lower end is opened; A heater for heating the inside of the tube to a predetermined temperature; A pedestal for selectively sealing the lower end of the tube; A wafer boat positioned above the pedestal and having a plurality of wafers aligned; A fluid injection tube configured to extend a predetermined length from the outside of the tube to the inside of the tube and receive a predetermined reaction fluid from an external fluid supply line so that a predetermined thin film is deposited on the wafer; A tube flange interposed between the tube and the pedestal, the tube flange having an injection pipe insertion hole into which the fluid injection pipe is inserted and a fluid discharge port for discharging the fluid inside the tube to the outside; A first connection flange formed to extend a predetermined length to the outside of the injection pipe insertion hole; A joint pipe connecting the first connection flange to the fluid supply line; A clamp for fixing a connection portion between the first connection flange and the joint pipe; Coupling unit for fixing the connecting portion of the joint pipe and the fluid supply line; Vertical furnace for manufacturing a semiconductor device comprising a flow preventing means for preventing the flow of the fluid supply line connected to the joint pipe. According to claim 1, wherein the joint pipe includes a second connecting flange corresponding to the first connecting flange, and a cylindrical portion connected to the fluid supply line; The coupling unit may be interposed between the first fixing nut fitted into the cylindrical portion, the second fixing nut fitted into the fluid supply line, and the first fixing nut and the first fixing nut interposed between the first fixing nut and the first fixing nut. A nipple having a spiral formed on an outer circumferential surface thereof to be screwed to each other, a first fixing washer fitted between the first fixing nut and the nipple, and a second fixing washer fitted between the second fixing nut and the nipple; The flow preventing means comprises at least one flow preventing protrusion formed on the outer circumferential surface of the cylindrical portion and at least one flow preventing groove formed on the inner circumferential surface of the first fixing washer so that the flow preventing protrusion is fitted. in. The vertical furnace of claim 2, wherein the flow preventing protrusion is formed in a key type, and the flow preventing groove is formed in a key groove type into which the flow preventing protrusion is fitted.