KR20050008057A - Method for marking wafer by laser - Google Patents

Method for marking wafer by laser Download PDF

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Publication number
KR20050008057A
KR20050008057A KR1020030047742A KR20030047742A KR20050008057A KR 20050008057 A KR20050008057 A KR 20050008057A KR 1020030047742 A KR1020030047742 A KR 1020030047742A KR 20030047742 A KR20030047742 A KR 20030047742A KR 20050008057 A KR20050008057 A KR 20050008057A
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KR
South Korea
Prior art keywords
wafer
laser
laser marking
backside
marking
Prior art date
Application number
KR1020030047742A
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Korean (ko)
Inventor
윤일영
Original Assignee
매그나칩 반도체 유한회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 매그나칩 반도체 유한회사 filed Critical 매그나칩 반도체 유한회사
Priority to KR1020030047742A priority Critical patent/KR20050008057A/en
Publication of KR20050008057A publication Critical patent/KR20050008057A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67282—Marking devices

Abstract

PURPOSE: A laser marking method is provided to improve efficiency of a manufacturing work by performing a laser marking process on a backside instead of a front side of a wafer to form a clear laser mark. CONSTITUTION: A job number(1) and a wafer number(2) are marked on a flat region of an edge of a backside(3b) of a wafer by using a laser marking method. Marked characters are kept in a clear state by performing a laser marking process on the backside of the wafer. In addition, a semiconductor fabrication process characteristic is improved by laser-marking the clear characters on the backside of the wafer.

Description

레이저 마킹방법 {Method for marking wafer by laser}Laser marking method {Method for marking wafer by laser}

본 발명은 레이저 마킹방법에 관한 것으로, 특히 웨이퍼의 뒷면으로 레이저 마킹을 하여 레이저 마킹을 선명하게 하며 레이저로 수행되는 작업공정의 특성을 향상시키는 레이저 마킹방법이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser marking method, and more particularly, to a laser marking on the back side of a wafer, which makes laser marking clear and improves the characteristics of a work process performed by a laser.

일반적으로 종래에는 작업 수행번호(run number)를 식별하기 위한 레이저 마킹(laser marking)작업은 웨이퍼의 가장자리지역인 평탄한 구역위의 지역에 표시하였다.In general, laser marking operations to identify run numbers have been marked in areas over flat areas, which are edge regions of wafers.

도 1은 종래의 레이저 마킹방법을 설명해주는 것으로써, 웨이퍼 앞면(3a)의 가장자리의 평탄한 지역에 작업수행번호(1)와 웨이퍼 번호(2)를 레이저로 마킹한 것을 도시한 것이다.FIG. 1 illustrates a conventional laser marking method, which shows a laser marking of a work number 1 and a wafer number 2 on a flat area of an edge of a wafer front surface 3a.

상기와 같은 방법으로 레이저 마킹된 웨이퍼로 작업을 할 경우 화학적 기계적으로 표면을 평탄하게 연마하는 공정(CMP : Chemical Mechnical Polishing)특성상 상기 가장자리지역의 연마율이 높기때문에 각종 씨엠피(STI, ILD, IMD CMP)공정으로 인하여 표식이 보이지 않는 경우가 자주 발생하였다.When working with a laser-marked wafer as described above, the CMP (Chem: Chemical Mechnical Polishing) characteristics of the polishing area of the edge region is high, so the various CMP (STI, ILD, IMD) Markers are often invisible due to the CMP) process.

또한, 상기 레이저 마킹을 할때 생기는 상기 웨이퍼 표면의 미진(particle) 과 형세(topology)로 인해 상기 씨엠피공정을 하는 경우에 결함의 원인이 되는 경우가 자주 발생하였다.In addition, the particles and the topology of the wafer surface generated during the laser marking often cause defects in the CMP process.

따라서, 본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로서, 작업 수행번호와 웨이퍼 번호를 식별하기 위하여 레이저 마킹을 웨이퍼의 앞면이 아닌 뒷면에 실시함으로서 여러공정을 진행함에 따라 레이저 마킹된 글자가 희미해져 웨이퍼 번호를 식별하기 어려워지는 문제와 레이저 마킹을 할 때 생기는 웨이퍼 표면의 미진과 형세에 의하여 반도체 제조공정중에 발생하는 결함의 원인을 제거하는 방법을 제시한다.Accordingly, the present invention has been made in order to solve the above problems, the laser-marked letters as the laser marking is carried out on the back of the wafer rather than the front of the wafer to identify the operation number and the wafer number. The present invention proposes a method for eliminating the cause of defects that occur during the semiconductor manufacturing process due to blurring and difficulty in identifying the wafer number and the fineness and shape of the wafer surface generated during laser marking.

도 1은 종래의 레이저 마킹방법으로 이루어지는 웨이퍼의 전면 상부도.1 is a front top view of a wafer made of a conventional laser marking method.

도 2는 본 발명에 의한 레이저 마킹방법으로 이루어지는 웨이퍼의 후면 상부도.2 is a rear top view of the wafer formed by the laser marking method according to the present invention;

<도면의 주요부분에 대한 기호의 설명><Description of Symbols for Main Parts of Drawing>

1 : 작업수행번호 2 : 웨이퍼 번호1: operation number 2: wafer number

3a : 웨이퍼의 앞면 3b : 웨이퍼의 뒷면3a: front side of wafer 3b: back side of wafer

상기 목적을 달성하기 위하여 본 발명은 웨이퍼를 제공하는 단계, 상기 웨이퍼의 뒷면에 레이저 마킹을 하는 단계를 포함하는 것을 특징으로 한다.In order to achieve the above object, the present invention is characterized in that it comprises a step of providing a wafer, the laser marking on the back of the wafer.

이 하, 첨부된 도면을 참조하여 설명한다.Hereinafter, with reference to the accompanying drawings will be described.

도 2에서 보는 바와 같이 웨이퍼 뒷면(3b) 가장자리의 평탄한 지역에 작업수행번호(1)와 웨이퍼 번호(2)를 레이저로 마킹한다.As shown in FIG. 2, the operation number 1 and the wafer number 2 are marked with a laser on a flat area at the edge of the wafer backside 3b.

이로써, 상기 웨이퍼로 공정을 진행할 때 여러공정을 진행함에 따라 레이저 마킹된 글자가 희미해져 웨이퍼 번호를 식별하기 어려워지는 문제와 상기 레이저 마킹을 할 때 생기는 웨이퍼 표면의 미진과 형세에 의하여 씨엠피공정과 같은 반도체 제조공정에서 발생할 수 있는 결함의 원인을 제거할 수 있다.As a result, the CMP process may be difficult due to the problem that it becomes difficult to identify the wafer number as the laser marking letters fade due to various processes when the wafer is processed, and the fineness and shape of the wafer surface generated during the laser marking. It is possible to eliminate the cause of defects that may occur in the same semiconductor manufacturing process.

여기서, 상기 레이저 마킹을 뒷면으로 할 때 웨이퍼 가장자리에서 5 ~ 20 mm 떨어진 부근에 표시하며 레이저 파워는 860 uJ로 설정한다.In this case, the laser marking is displayed at a distance of 5 to 20 mm from the edge of the wafer when the laser marking is on the back side, and the laser power is set to 860 uJ.

그리고, 상기 레이저 마킹으로 새겨지는 글꼴의 크기는 0.700 ~ 1.0 mm로 한다.And, the size of the font engraved by the laser marking is 0.700 ~ 1.0 mm.

상기와 같은 방법으로 웨이퍼 뒷면에 레이저 마킹을 함으로써 글자를 선명하게 보존할 수 있으며 반도체 제조공정에서의 공정특성을 향상시킬 수 있다.By laser marking on the back side of the wafer in the same way as described above it is possible to preserve the text clearly and to improve the process characteristics in the semiconductor manufacturing process.

따라서, 상기와 같은 본 발명은 다음과 같은 효과를 지닌다.Therefore, the present invention as described above has the following effects.

레이저 마킹을 웨이퍼 뒷면에 함으로써 글자를 선명하게 보존할 수 있으며 반도체 제조공정의 특성을 향상시킬 수 있다.By laser marking on the back of the wafer, letters can be preserved clearly and the characteristics of the semiconductor manufacturing process can be improved.

한편, 본 발명은 상술한 특정의 바람직한 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경실시가 가능할 것이다.On the other hand, the present invention is not limited to the above-described specific preferred embodiments, anyone of ordinary skill in the art without departing from the gist of the invention claimed in the claims can be variously modified. will be.

Claims (2)

웨이퍼를 제공하는 단계,Providing a wafer, 상기 웨이퍼의 뒷면에 레이저 마킹을 하는 단계를 포함하는 것을 특징으로 하는 레이저 마킹방법.And laser marking the back surface of the wafer. 제 1항에 있어서, 상기 레이저 마킹을 할때 상기 웨이퍼 뒷면의 가장자리에서 5 ~ 20 mm 떨어진 부분에 마킹을 하는 레이저 마킹방법.The laser marking method of claim 1, wherein the marking is performed at a portion 5 to 20 mm away from an edge of the back surface of the wafer when the laser marking is performed.
KR1020030047742A 2003-07-14 2003-07-14 Method for marking wafer by laser KR20050008057A (en)

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7451010B2 (en) 2005-12-16 2008-11-11 Samsung Electronics Co., Ltd. Chip information character set generation system and method of marking a chip with a chip information character set
US8128830B2 (en) 2009-09-17 2012-03-06 Hitachi Global Storage Technologies Netherlands, B.V. Labeling an imprint lithography template

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7451010B2 (en) 2005-12-16 2008-11-11 Samsung Electronics Co., Ltd. Chip information character set generation system and method of marking a chip with a chip information character set
US8128830B2 (en) 2009-09-17 2012-03-06 Hitachi Global Storage Technologies Netherlands, B.V. Labeling an imprint lithography template

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