KR20040098468A - Chemical vapor deposition apparatus having multi piece ceramic guide - Google Patents

Chemical vapor deposition apparatus having multi piece ceramic guide Download PDF

Info

Publication number
KR20040098468A
KR20040098468A KR1020030030845A KR20030030845A KR20040098468A KR 20040098468 A KR20040098468 A KR 20040098468A KR 1020030030845 A KR1020030030845 A KR 1020030030845A KR 20030030845 A KR20030030845 A KR 20030030845A KR 20040098468 A KR20040098468 A KR 20040098468A
Authority
KR
South Korea
Prior art keywords
chamber
ceramic guide
diffuser
ceramic
gas
Prior art date
Application number
KR1020030030845A
Other languages
Korean (ko)
Inventor
이호
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020030030845A priority Critical patent/KR20040098468A/en
Publication of KR20040098468A publication Critical patent/KR20040098468A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50—Fixed connections
    • H01R12/51—Fixed connections for rigid printed circuits or like structures
    • H01R12/55—Fixed connections for rigid printed circuits or like structures characterised by the terminals
    • H01R12/57—Fixed connections for rigid printed circuits or like structures characterised by the terminals surface mounting terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
    • H01R12/716—Coupling device provided on the PCB
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/72—Coupling devices for rigid printing circuits or like structures coupling with the edge of the rigid printed circuits or like structures
    • H01R12/73—Coupling devices for rigid printing circuits or like structures coupling with the edge of the rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
    • H01R12/732—Printed circuits being in the same plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/40—Securing contact members in or to a base or case; Insulating of contact members
    • H01R13/42—Securing in a demountable manner
    • H01R13/422—Securing in resilient one-piece base or case, e.g. by friction; One-piece base or case formed with resilient locking means

Abstract

PURPOSE: A CVD(Chemical Vapor Deposition) apparatus is provided to prevent a breakage of a ceramic guide due to the repeat of thermal expansion and thermal shrink while the chamber for CVD process is cooled down and heated up repeatedly by using ceramic guide segments. CONSTITUTION: A CVD apparatus comprises a processing chamber, a substrate support unit for loading a substrate in the processing chamber, a diffuser(70) with a plurality of injection holes(70a) in the processing chamber, and a gas injection pipe for injecting a gas in the chamber through the injection holes. The CVD apparatus further comprises a ceramic guide unit(5) for connecting the chamber and the diffuser. The ceramic guide unit is made up of not single ceramic bar but a plurality of ceramic guide segments(5a), thereby reducing crack due to thermal transformation.

Description

다중 조각 세라믹 가이드를 가지는 ＣＶＤ 장치{Chemical vapor deposition apparatus having multi piece ceramic guide}Chemical vapor deposition apparatus having multi piece ceramic guide

본 발명은 화학 기상 증착(chemical vapor deposition, CVD) 장치에 관한 것이다.The present invention relates to a chemical vapor deposition (CVD) apparatus.

일반적으로 화학 기상 증착(CVD ; Chemical vapor Deposition)은 기판 위에 형성시키려고 하는 박막 재료를 구성하는 원소로 된 1종 또는 그 이상의 화합물,단체의 가스를 기판 위에 공급하여 화학반응을 이용, 박막을 형성시키는 방법이다. 통상 2가지 이상의 가스를 공급하여 혼합, 화학반응을 일으키는 것으로써, TFT - LCD(thin film transistor liquid crystal display)와 같은 반도체 소자의 제조 공정에서 다양한 박막의 형성에 사용되고 있다.In general, chemical vapor deposition (CVD) is a process of forming a thin film by using a chemical reaction by supplying a gas of one or more compounds or groups of elements constituting a thin film material to be formed on a substrate. It is a way. In general, two or more gases are supplied to cause mixing and chemical reactions, which are used to form various thin films in the manufacturing process of semiconductor devices such as TFT-LCD (thin film transistor liquid crystal display).

이러한 CVD 장치에서 특히 디퓨저(Diffuser)는 반응 가스가 기판 위에 고르게 퍼지도록 하는 확산기 역할을 하고 동시에 플라즈마 전극의 역할을 수행하고, 세라믹 가이드는 챔버 리드와 이러한 디퓨저를 전기적으로 분리하고, 아크의 발생을 방지하기 위해 챔버 리드와 디퓨저 사이에 설치된 절연체이다.In such a CVD apparatus, in particular, a diffuser acts as a diffuser to spread the reaction gas evenly over the substrate and at the same time serves as a plasma electrode, and the ceramic guide electrically separates the chamber leads from these diffusers and prevents arcing. It is an insulator installed between the chamber lid and the diffuser to prevent it.

그러나, CVD 장치의 챔버를 쿨 다운(Cool Down) 및 히트업 할 때, 이러한 세라믹 가이드는 열팽창 및 열수축에 의해 크랙(Crack)이 발생하고, 여러 번의 쿨 다운 및 히트업 공정에 의해 이러한 크랙이 점차 커짐으로써 세라믹 가이드가 깨지기도 한다.However, when cooling down and heat up the chamber of the CVD apparatus, these ceramic guides are cracked by thermal expansion and thermal contraction, and these cracks are gradually caused by several cool down and heat up processes. The ceramic guide may be broken by increasing.

또한, 대형 기판용 CVD 장치일수록 챔버의 크기도 커지고 이에 따라 세라믹 가이드의 크기도 커지므로 세라믹 가이드가 깨질 가능성도 높아진다.In addition, the larger the CVD apparatus for a large substrate, the larger the chamber size and, accordingly, the larger the ceramic guide, the higher the possibility of breaking the ceramic guide.

본 발명은 상기 문제점을 해결하기 위한 것으로서, 세라믹 가이드가 깨지는 것을 방지하는 CVD 장치를 제공하는 데 목적이 있다.The present invention has been made to solve the above problems, and an object thereof is to provide a CVD apparatus for preventing the ceramic guide from being broken.

도 1은 본 발명의 일 실시예에 따른 CVD 장치를 도시한 개략도이고,1 is a schematic diagram illustrating a CVD apparatus according to an embodiment of the present invention,

도 2는 도 1의 세라믹 가이드가 설치된 챔버 리드의 평면도이다.FIG. 2 is a plan view of the chamber lid in which the ceramic guide of FIG. 1 is installed.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

5 : 세라믹 가이드 5a : 조각 세라믹 가이드5: ceramic guide 5a: engraving ceramic guide

10 ; 챔버 20 ; 챔버 리드10; Chamber 20; Chamber reed

40 ; 서셉터 50 ; 글래스 기판40; Susceptor 50; Glass substrate

70 ; 디퓨저 70a ; 분사공70; Diffuser 70a; Jet

70b ; 디퓨저 프레임 80a ; 가스 주입관70b; Diffuser frame 80a; Gas injection pipe

상기 목적을 달성하기 위한 본 발명의 CVD 장치는 챔버; 상기 챔버 내에 위치하고 있으며 글래스 기판이 안착되어 있는 서셉터; 상기 챔버 내부를 상부 공간및 하부 공간으로 분할하도록 설치되고 그 상부 공간과 하부 공간을 서로 연결하는 복수개의 분사공을 가지고 있는 디퓨저; 상기 디퓨저의 분사공을 통하여 상기 챔버내로 가스를 주입하는 가스 주입관; 상기 챔버와 상기 디퓨저 사이에 설치되어 있는 세라믹 가이드를 포함하고, 상기 세라믹 가이드는 복수개의 조각 세라믹 가이드로 이루어진 것이 바람직하다.The CVD apparatus of the present invention for achieving the above object is a chamber; A susceptor located in the chamber and having a glass substrate seated thereon; A diffuser installed to divide the inside of the chamber into an upper space and a lower space and having a plurality of injection holes connecting the upper space and the lower space to each other; A gas injection tube for injecting gas into the chamber through the injection hole of the diffuser; And a ceramic guide disposed between the chamber and the diffuser, wherein the ceramic guide is composed of a plurality of piece ceramic guides.

이하 첨부된 도면을 참조하여 본 발명에 따른 바람직한 일 실시예를 상세하게 설명하면 다음과 같다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1에는 본 발명의 일 실시예에 따른 CVD 장치의 개략도가 도시되어 있다. 도 1을 참조하면, 본 발명의 일 실시예에 따른 CVD 장치는 반응 가스에 의해 박막이 증착되는 반응 공간인 챔버(100)를 포함한다. 이러한 반응 공간은 외부와 차단된다. 여기서, 챔버(100)는 챔버 하부(10) 및 챔버 리드(20)를 포함한다. 챔버 하부(10)는 챔버(100)의 하부를 이루며 챔버 리드(chamber lid)(20)는 챔버(100)의 상부를 이룬다. 반응 공간과 외부와의 효과적인 차단을 위해 챔버 리드(20)와 챔버 하부(10)의 결합 부위에는 오링(30)이 설치된다.1 shows a schematic diagram of a CVD apparatus according to an embodiment of the present invention. Referring to FIG. 1, a CVD apparatus according to an embodiment of the present invention includes a chamber 100, which is a reaction space in which a thin film is deposited by a reaction gas. This reaction space is isolated from the outside. Here, the chamber 100 includes a chamber bottom 10 and a chamber lid 20. The chamber lower portion 10 forms the lower portion of the chamber 100 and the chamber lid 20 forms the upper portion of the chamber 100. O-ring 30 is installed at the coupling portion of the chamber lid 20 and the lower chamber 10 for effective blocking of the reaction space and the outside.

챔버 하부(10)의 측벽에는 슬롯 밸브(slot valve, 60)가 설치되어 있으며, 로드락부(미도시)로부터 챔버 하부(10)내로 글래스 기판(50)을 이송시키기 위해서는 슬롯 밸브(60)를 열어야 한다. 챔버 하부(10)의 내부에는 서셉터(Susceptor)(40)가 설치되어 있으며, 여기에 글래스 기판(50)이 안착된다. 서셉터(40)는 서셉터 이송수단(45)에 의해 상하로 이동시킬 수 있다. 서셉터(40) 내부에는 안착되는 글라스 기판(50)을 가열시키기 위한 히터(미도시)가 장착될 수있다.A slot valve 60 is installed on the side wall of the lower chamber 10. In order to transfer the glass substrate 50 from the load lock unit (not shown) into the lower chamber 10, the slot valve 60 must be opened. do. A susceptor 40 is installed in the lower chamber 10, and the glass substrate 50 is seated therein. The susceptor 40 can be moved up and down by the susceptor transfer means 45. The susceptor 40 may be equipped with a heater (not shown) for heating the glass substrate 50 to be seated.

챔버(100) 내에 가스를 주입하기 위한 가스 배관(400)과 챔버 리드(20)와의 결합부에는 가스 주입관(80a)이 설치되어 있다. 그리고, 가스 주입관(80a)의 앞에는 차단판(Backing plate)(90)이 설치된다. 이러한 차단판(90)은 디퓨저(70)를 지지하는 역할을 하고, 도전체로 제작되어 RF 전력이 디퓨저로 전달되는 전달 금속이 되기도 한다. 또한, 가스 주입관(80a)을 통해 유입된 반응 가스가 이 차단판(90)내에 형성되어 있는 확산판(90a)에 부딪히며 차단판(90) 내에서 충분히 혼합(Mixing)되어지고 확산판(90a)을 돌아 디퓨저의 주위부분까지 반응 가스가 확산되도록 한다.A gas injection pipe 80a is installed at a coupling portion between the gas pipe 400 and the chamber lid 20 for injecting gas into the chamber 100. In addition, a backing plate 90 is installed in front of the gas injection pipe 80a. The blocking plate 90 serves to support the diffuser 70 and may be made of a conductor to be a transfer metal for transmitting RF power to the diffuser. In addition, the reaction gas introduced through the gas injection tube 80a hits the diffusion plate 90a formed in the blocking plate 90 and is sufficiently mixed in the blocking plate 90 and diffused in the diffusion plate 90a. Turn) to allow the reaction gas to diffuse around the diffuser.

차단판(90)의 밑에는 소정 간격 이격되어 디퓨저(70)가 설치되어 있다. 이러한 디퓨저(Diffuser)(70)는 반응 가스가 글래스 기판(50) 위에 고르게 퍼지도록 하는 확산기 역할을 하고 동시에 플라즈마 전극의 역할을 수행한다.The diffuser 70 is provided below the blocking plate 90 at predetermined intervals. The diffuser 70 serves as a diffuser to spread the reaction gas evenly on the glass substrate 50 and at the same time serves as a plasma electrode.

디퓨저(70)의 글래스 기판(50)에 대향하는 면에는 복수개의 분사공(70a)이 형성되어 있으며, 가스 주입관(80a)에 의해 디퓨저(70)로 공급된 가스는 분사공(70a)을 통하여 글래스 기판(50)의 전 표면에 균일하게 분사된다. 주입된 가스는 가스 배기관(80b)을 통하여 배기된다.A plurality of injection holes 70a are formed on a surface of the diffuser 70 that faces the glass substrate 50, and the gas supplied to the diffuser 70 by the gas injection tube 80a forms the injection holes 70a. Through the glass substrate 50 is uniformly sprayed on. The injected gas is exhausted through the gas exhaust pipe 80b.

또한, 디퓨저(70)는 플라즈마 전극의 역할도 동시에 수행할 수 있도록 RF 전력 발생기(200)에 연결되고, 서셉터(40)는 접지된다.In addition, the diffuser 70 is connected to the RF power generator 200 to simultaneously perform the role of the plasma electrode, the susceptor 40 is grounded.

RF 전력 발생기(200)에서 발생된 전력은 RF 매칭기(300)에 의해 튜닝되고 가스 주입관(80a)을 통해 차단판(90)으로 전달된다. 그리고, 차단판(90)에 연결된 디퓨저(70)로 RF 전력이 전달된다.Power generated by the RF power generator 200 is tuned by the RF matcher 300 and transferred to the blocking plate 90 through the gas injection pipe 80a. Then, RF power is delivered to the diffuser 70 connected to the blocking plate 90.

디퓨저(70)는 이러한 플라즈마 전극의 역할도 수행해야 하므로 도전체 예컨대, 알루미늄으로 이루어져 있다. 여기서, 플라즈마에 의한 아크(arc)의 발생이나 표면 보호를 위해 통상 그 표면은 산화막으로 양극화처리(anodizing)된다.The diffuser 70 is also made of a conductor, for example aluminum, because it must also serve as a plasma electrode. Here, the surface is usually anodized with an oxide film for generation of arcs or surface protection by plasma.

그리고, 챔버 리드(20)와 디퓨저(70)를 전기적으로 분리하고, 챔버 리드(20)와 디퓨저(70)간에 아크의 발생을 방지하기 위해 절연체인 세라믹 가이드(5)가 설치되어 있다.In order to electrically separate the chamber lid 20 and the diffuser 70, and to prevent generation of an arc between the chamber lid 20 and the diffuser 70, a ceramic guide 5 as an insulator is provided.

도 2에는 도 1의 세라믹 가이드(5)가 설치된 챔버 리드(20)의 평면도를 도시하였다.FIG. 2 is a plan view of the chamber lid 20 in which the ceramic guide 5 of FIG. 1 is installed.

도 2에 도시된 바와 같이, 챔버 리드(20)와 디퓨저(70)간에 아크의 발생을 방지하기 위해 설치된 절연체인 세라믹 가이드(5)까지 디퓨저 프레임(70b)이 연장되어 있다.As shown in FIG. 2, the diffuser frame 70b extends to the ceramic guide 5, which is an insulator provided to prevent the generation of arcs between the chamber lid 20 and the diffuser 70.

세라믹 가이드(5)는 복수개의 조각 세라믹 가이드(5a)로 이루어져 있다. 세라믹 가이드(5)는 복수개의 조각 세라믹 가이드(5a)로 이루어져 있기 때문에 CVD 장치의 챔버를 쿨 다운(Cool Down) 및 히트업 할 때, 세라믹 가이드는 열변형량이 최소화된다. 따라서, 열팽창 및 열수축에 의한 크랙(Crack)이 줄어들기 때문에 장비의 유지 보수에 들어가는 노력이 절감된다. 또한, 세라믹 가이드(5)에 크랙이 발생할 경우에도 발생된 조각 세라믹 가이드(5a)만 교체하면 된다.The ceramic guide 5 consists of several piece ceramic guide 5a. Since the ceramic guide 5 is composed of a plurality of piece ceramic guides 5a, when the chamber of the CVD apparatus is cooled down and heats up, the ceramic strain is minimized in thermal deformation. As a result, cracks due to thermal expansion and thermal contraction are reduced, thereby reducing effort for maintenance of the equipment. In addition, even when a crack occurs in the ceramic guide 5, only the sculpted ceramic guide 5a generated may be replaced.

본 발명은 첨부된 도면에 도시된 일 실시예를 참고로 설명되었으나 이는 예시적인 것에 불과하며, 당해 기술분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 수 있을 것이다. 따라서, 본 발명의 진정한 보호범위는 첨부된 청구범위에 의해서만 정해져야 할 것이다.Although the present invention has been described with reference to one embodiment shown in the accompanying drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Could be. Accordingly, the true scope of protection of the invention should be defined only by the appended claims.

본 발명에 따른 CVD 장치는 세라믹 가이드를 조각 세라믹 가이드로 분할함으로써 열변형을 최소화하여 세라믹 가이드가 깨지는 것을 방지할 수 있다는 장점이 있다.The CVD apparatus according to the present invention has an advantage in that the ceramic guide is prevented from being broken by minimizing thermal deformation by dividing the ceramic guide into pieces of ceramic guide.

또한, 조각 세라믹 가이드에 크랙이 발생할 경우에는 발생된 조각 세라믹 가이드만을 교체함으로써 장비의 유지 보수비를 절감할 수 있다는 장점이 있다.In addition, when a crack occurs in the piece ceramic guide, there is an advantage that the maintenance cost of the equipment can be reduced by replacing only the piece ceramic guide generated.

Claims (1)

챔버;chamber; 상기 챔버 내에 위치하고 있으며 글래스 기판이 안착되어 있는 서셉터;A susceptor located in the chamber and having a glass substrate seated thereon; 상기 챔버 내부를 상부 공간 및 하부 공간으로 분할하도록 설치되고 그 상부 공간과 하부 공간을 서로 연결하는 복수개의 분사공을 가지고 있는 디퓨저;A diffuser installed to divide the inside of the chamber into an upper space and a lower space and having a plurality of injection holes connecting the upper space and the lower space to each other; 상기 디퓨저의 분사공을 통하여 상기 챔버내로 가스를 주입하는 가스 주입관;A gas injection tube for injecting gas into the chamber through the injection hole of the diffuser; 상기 챔버와 상기 디퓨저 사이에 설치되어 있는 세라믹 가이드;A ceramic guide disposed between the chamber and the diffuser; 를 포함하고,Including, 상기 세라믹 가이드는 복수개의 조각 세라믹 가이드로 이루어진 CVD 장치.The ceramic guide is a CVD device consisting of a plurality of piece ceramic guides.
KR1020030030845A 2003-05-15 2003-05-15 Chemical vapor deposition apparatus having multi piece ceramic guide KR20040098468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020030030845A KR20040098468A (en) 2003-05-15 2003-05-15 Chemical vapor deposition apparatus having multi piece ceramic guide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030030845A KR20040098468A (en) 2003-05-15 2003-05-15 Chemical vapor deposition apparatus having multi piece ceramic guide

Publications (1)

Publication Number Publication Date
KR20040098468A true KR20040098468A (en) 2004-11-20

Family

ID=37376360

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030030845A KR20040098468A (en) 2003-05-15 2003-05-15 Chemical vapor deposition apparatus having multi piece ceramic guide

Country Status (1)

Country Link
KR (1) KR20040098468A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100801858B1 (en) * 2007-08-09 2008-02-11 에이스하이텍 주식회사 Diffuser frame

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100801858B1 (en) * 2007-08-09 2008-02-11 에이스하이텍 주식회사 Diffuser frame

Similar Documents

Publication Publication Date Title
JP4335438B2 (en) Process chamber lid assembly using asymmetric flow geometry
US5330578A (en) Plasma treatment apparatus
US6828243B2 (en) Apparatus and method for plasma treatment
US6638392B2 (en) Plasma process apparatus
US20090165722A1 (en) Apparatus for treating substrate
KR20010043913A (en) Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
US20070062646A1 (en) Method and apparatus for processing substrates
US20140083615A1 (en) Antenna assembly and a plasma processing chamber having the same
KR100490049B1 (en) Chemical vapor deposition apparatus having a single body type diffuser frame
KR19980033001A (en) Faceplate Heat Chokes in Chemical Vapor Deposition Reactors
KR20060042255A (en) In-situ dry clean chamber for front end of line fabrication
TWI415191B (en) Substrate processing apparatus
KR100264941B1 (en) Using ceramic wafer to protect susceptor during cleaning of a processing chamber
US20010030024A1 (en) Plasma-enhanced processing apparatus
TWI715525B (en) Gas confiner assembly and processing chamber using the same
US6172322B1 (en) Annealing an amorphous film using microwave energy
KR20010092386A (en) Plasma process apparatus
JP3599619B2 (en) Plasma process equipment
TWI761039B (en) Method of processing substrate, substrate boat and thermal processing system
KR20030066118A (en) Showerhead type gas supplier which minimizes thermal expansion-induced deformation
KR20040098468A (en) Chemical vapor deposition apparatus having multi piece ceramic guide
KR101138609B1 (en) Plasma generation apparatus for making radical effectively
KR20040088948A (en) Chemical vapor deposition apparatus having isolation valve for exchanging RPS
JPH05144595A (en) Plasma processing device
KR19990076068A (en) Apparatus for Manufacturing Semiconductor Device Using Plasma

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application