KR20040087118A - Plasma enhanced chemical vapor deposition apparatus - Google Patents

Abstract

PURPOSE: A PECVD(Plasma Enhanced Chemical Vapor Deposition) device is provided so that a substrate is safely and accurately received in a susceptor and a deposition film is uniformly formed. CONSTITUTION: A susceptor(34) supports a substrate(32) below. At least one or more align poles(42) are formed in a position corresponding to an external side of the substrate in the susceptor. A shadow frame(36) supports the edge of the substrate above. At least one or more align holes into which the align poles are inserted are formed in the shadow frame. The first and second supporting boards(54,70) are formed in at least one of the susceptor and the shadow frame in a position which is close to the side of the substrate, and are aligned to the substrate.

Description

Plasma chemical vapor deposition apparatus {PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma chemical vapor deposition apparatus, and more particularly, to a plasma chemical vapor deposition apparatus in which a substrate is accurately seated on a susceptor so that a deposition film can be uniformly formed.

In general, a liquid crystal display (LCD) displays an image corresponding to a data signal on a liquid crystal panel by adjusting light transmittance of liquid crystal cells arranged in a matrix on the liquid crystal panel with a video data signal supplied thereto. The liquid crystal display device includes a thin film transistor array substrate having a gate line and a data line intersecting to determine a pixel region, a thin film transistor formed at an intersection of the gate line and the data line, and a pixel electrode connected to the thin film transistor. In the space provided between the color filter array substrate and the thin film transistor array substrate by a spacer formed between the color filter array substrate having the color filter and the like, a spacer formed between the thin film transistor array substrate and the color filter array substrate to maintain a constant cell gap. With filled liquid crystal.

In the method of manufacturing the liquid crystal display device, the active layer and the ohmic contact layer included in the thin film transistor as the channel portion, the gate insulating film insulating the data line and the gate line, and the protective film protecting the thin film transistor are plasma enhanced chemical vapor deposition (Plasma Enhanced). Chemical Vapor Deposition (hereinafter referred to as "PECVD") method.

PECVD method injects the gas required for deposition inside the vacuum chamber, and when the desired pressure and substrate temperature are set, it decomposes the injected gas into a plasma state using a radio frequency (hereinafter referred to as "RF") on the substrate. The deposition material is deposited. The conditions required for deposition vary depending on the vacuum state, RF, substrate temperature, reactant gas and reaction pressure.

1 is a view showing a conventional plasma chemical vapor deposition apparatus.

Referring to FIG. 1, a chamber 16 of a conventional plasma chemical vapor deposition apparatus includes a substrate 2 on which a deposition film is to be formed, a susceptor 4 for applying heat to the substrate 2, and a substrate 2 outside of the substrate 16. The shadow frame 6 is provided so as not to leave the furnace.

The susceptor 4 is lifted by the support shaft 14 to allow the substrate 2 to be seated therein, and a heating coil is provided therein to supply heat to the substrate 2 to improve deposition efficiency.

The susceptor 4 is divided into a first region 4a overlapping the substrate 2 and a second region 4b not overlapping the substrate 2. The first region 4a corresponds to a plurality of lift pins 28 for facilitating loading and unloading of the substrate 2, and heating for supplying heat to the substrate 2 in the first region 4a. The coil is built in. An alignment pin 12 is formed in the second region 4b to align the shadow frame 6 and the susceptor 4. In addition, a plurality of through holes 24 are formed in the susceptor 4 so that the lift pin 28 and the arrow pin 10 fixed to the pin plate 8 pass through the susceptor 4.

The shadow frame 6 is positioned at a predetermined distance from the gas outlet 18 so as to prevent the substrate 2 from escaping from the outside when the substrate 2 is raised. In addition, the shadow frame 6 prevents the loss of the deposition material or the process gas formed on the substrate 2 overlapping the susceptor 4 during the deposition process. The shadow frame 6 has an alignment groove 26 corresponding to the alignment pin 12 of the susceptor 4 to facilitate alignment with the susceptor 4.

2A to 2C are views for explaining a deposition process using the PECVD apparatus shown in FIG.

First, the substrate 2 is loaded into the chamber by the robot arm 22 as shown in FIG. 2A. At this time, the substrate 2 is not in contact with the susceptor 4 and the lift pin 28. Subsequently, the pin plate 8 is raised so that the arrow pin 10 and the lift pin 28 fixed to the pin plate 8 are raised as shown in FIG. 2B. The substrate 2 is lifted to a certain height by the raised lift pin 28, and the side surface of the substrate 2 is supported by the arrow pin 10. In this state, the robot arm 22 is unloaded in the chamber.

After that, when the susceptor 4 is lifted by the axis elevator 14, the substrate 2 is seated on the front surface of the susceptor 4 as shown in FIG. 2C, and the shadow frame 6 is attached to the substrate 2. In a state where it is mounted on the edge of the) is maintained a certain distance from the gas outlet (18). At this time, since the alignment pin 12 of the susceptor 4 is inserted into the alignment groove 26 of the shadow frame 6, the susceptor 4 and the shadow frame 6 are aligned.

In this state, the heating coil embedded in the susceptor 4 heats the substrate 2 to a predetermined temperature, and the process gas is injected into the chamber 16 through the gas outlet 18. At the same time, when RF power is applied to the gas outlet 18 as the upper electrode, plasma is generated between the susceptor 4 and the gas outlet 18 which are grounded lower electrodes. The process gas injected into the chamber 16 is decomposed by the plasma to form a deposition film on the substrate 2.

In the conventional PECVD apparatus, the substrate 2 loaded into the chamber 16 by the robot arm 22 is supported by the lift pin 28 before being seated on the susceptor 4. At this time, the substrate 2 is supported by the lift pin 28 in a bent form by the atmosphere in the high temperature chamber 16. When the substrate 2 is seated on the susceptor 4 while the lift pin 28 descends, the substrate 2 seated on the susceptor 4 due to air flow in the chamber 16 may cause sliding phenomenon. do. Accordingly, the substrate 2 seated on the susceptor 4 does not completely coincide with the first region 4a of the susceptor 4 but partially overlaps the second region 4b as shown in FIG. 3. It is seated on the susceptor 4. Accordingly, the substrate 2 is partially heated only in the region B that overlaps the first region 4a except for the region A that overlaps the second region 4b of the susceptor 4. There is a problem that the deposited film formed on the N) is unevenly deposited.

Accordingly, it is an object of the present invention to provide a plasma chemical vapor deposition apparatus in which a substrate is precisely seated on a susceptor so that a deposition film can be formed uniformly.

1 is a view showing a conventional plasma chemical vapor deposition apparatus.

2A to 2C are diagrams for describing a deposition process using the plasma chemical vapor deposition apparatus illustrated in FIG. 1.

3 is a view showing a case where the conventional substrate is not seated correctly on the susceptor.

4 is a view showing a plasma chemical vapor deposition apparatus according to the present invention.

5 is a view illustrating in detail the substrate, the susceptor and the shadow frame shown in FIG.

FIG. 6 is a diagram illustrating a rear surface of the shadow frame illustrated in FIG. 5.

7A to 7C are diagrams for describing a deposition process using the plasma chemical vapor deposition apparatus illustrated in FIG. 4.

FIG. 8 is a diagram illustrating a liquid crystal display panel formed using the plasma chemical vapor deposition apparatus illustrated in FIG. 4.

<Description of Symbols for Main Parts of Drawings>

2,32: substrate 4,34: susceptor

6,36: shadow frame 8,38: pin plate

10: arrow pin 12: alignment pin

14,44: Axial elevator 16,46: chamber

18,48: gas outlet 22,52: robot arm

24,60: through hole 26: alignment groove

28,58: lift pin 42: alignment pole

54,70: support 56: alignment hole

In order to achieve the above object, a plasma chemical vapor deposition apparatus according to the present invention, a substrate, a susceptor having at least one alignment pole formed at a position corresponding to the outside of the substrate and supporting the substrate from below, and the substrate A shadow frame having at least one alignment hole into which the alignment pole is inserted and supporting the edge of the upper surface; and at least one of the susceptor and the shadow frame at a position proximate to the side surface of the substrate, And an alignable support.

The support is characterized in that it is formed to surround the edge of the substrate in the form of "L".

The support may include a first support formed on the susceptor to correspond to the lower edge of the substrate, and a second support formed on the shadow frame to correspond to the upper edge of the substrate. .

The first and second supports are formed with the substrate and a predetermined distance therebetween.

A distance between the substrate and the first support may be wider than a distance between the substrate and the second support.

The alignment pole is formed in the corner region of the susceptor.

The plasma chemical vapor deposition apparatus is formed to correspond to both sides of the substrate and the lift pin to move the substrate up and down, the pin plate is fixed to the lift pin to move the lift pin up and down, and the susceptor up and down It is characterized in that it further comprises a support shaft elevator for moving to.

The susceptor is characterized in that the heating coil is formed in the area in contact with the substrate.

Other objects and features of the present invention in addition to the above objects will become apparent from the description of the embodiments with reference to the accompanying drawings.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to FIGS. 4 to 8.

4 is a chamber 46 of the plasma chemical vapor deposition apparatus according to the present invention, a substrate 32 on which a deposition film is to be formed, a susceptor 34 for applying heat to the substrate 32, and the substrate 32 outside. The shadow frame 36 is provided so as not to be separated.

The susceptor 34 is lifted by the support shaft 44 to allow the substrate 32 to be seated, and there is a heating coil therein to supply heat to the substrate 32 to improve deposition efficiency. In addition, a plurality of through holes 60 are formed in the susceptor 34 so that lift pins 58 and arrow pins (not shown) fixed to the pin plate 38 are inserted through the susceptor 34. .

The susceptor 34 is divided into a first region 34a overlapping the substrate 32 and a second region 34b not overlapping the substrate 32. The first region 34a corresponds to a plurality of lift pins 58 for facilitating loading and unloading of the substrate 32, and heating for supplying heat to the substrate 32 in the first region 34a. The coil is built in. The second region 34b includes at least one alignment pole 42 for aligning the shadow frame 36 and the susceptor 34, and a first agent for preventing the flow of the substrate 32. 1 support 54 is formed.

The alignment pole 42 is inserted into the alignment hole 56 of the shadow frame 36 as shown in FIG. 5 to align the shadow frame 36 and the susceptor 34. The first support 54 is formed in an “L” shape so as to surround the lower edge of the substrate 32 with a predetermined distance therebetween, thereby primarily preventing the flow of the substrate 32.

The shadow frame 36 is positioned at a predetermined distance from the gas ejection opening 48 to prevent the substrate 32 from escaping from the outside when the substrate 32 is raised. In addition, the shadow frame 36 prevents loss of deposition material or process gas formed on the substrate 32 overlapping the susceptor 34 during the deposition process. An alignment hole 56 corresponding to the alignment pole 42 of the susceptor 34 is formed in the shadow frame 36 to facilitate alignment with the susceptor 34. The alignment hole 56 is formed to penetrate the shadow frame 36 so that the alignment pole 42 of the susceptor 34 is inserted into the alignment hole 56.

In addition, as shown in FIG. 6, a second support 70 is formed on the rear surface of the shadow frame 36 to be relatively closer to the substrate 32 than the first support 54 of the susceptor 34. The second support 70 is formed in an “L” shape so as to surround the upper edge of the substrate 32 to secondaryly prevent the flow of the substrate 32.

7A to 7C are views for explaining a deposition process using the PECVD apparatus shown in FIG.

First, the substrate 32 is loaded into the chamber by the robot arm 52 as shown in FIG. 7A. At this time, the substrate 32 is not in contact with the susceptor 34 and the lift pins 58. Subsequently, the pin plate 38 is raised so that the arrow pins (not shown) and the lift pins 58 fixed to the pin plate 38 are raised as shown in FIG. 7B. The raised lift pin 58 lifts the substrate 32 to a certain height, and the side surface of the substrate 32 is supported by the arrow pin. In this state, the robot arm 52 is unloaded in the chamber.

Subsequently, when the susceptor 34 is raised by the support elevator 44, the substrate 32 is seated on the front surface of the susceptor 34 as well as the shadow frame 36 as shown in FIG. 7C. In a state that is mounted on the edge of the) is maintained a certain distance from the gas outlet (48). At this time, the substrate 32 is prevented from flowing by the first support 54 of the susceptor 34 and the second support 70 of the shadow frame 36, and the susceptor 34 and the shadow frame 36 are prevented from flowing. ) Is aligned because the alignment pole 42 of the susceptor 34 is inserted into the alignment hole 56 of the shadow frame 36.

In this state, the heating coil embedded in the susceptor 34 heats the substrate 32 to a predetermined temperature, and process gas is injected into the chamber 46 through the gas outlet 48. At the same time, when RF power is applied to the gas outlet 48 as the upper electrode, plasma is generated between the susceptor 34 and the gas outlet 48 as the grounded lower electrode. The process gas injected into the chamber 46 is decomposed by the plasma to form a deposition film on the substrate 32.

8 is a view showing a liquid crystal panel formed using a PECVD apparatus according to the present invention.

Referring to FIG. 8, the liquid crystal panel includes a color filter substrate 81 and a TFT substrate 91 bonded together with a liquid crystal 86 interposed therebetween.

The liquid crystal 86 is rotated in response to an electric field applied to the liquid crystal 86 to adjust the amount of light transmitted through the TFT substrate 91.

The color filter substrate 81 includes a color filter 82 and a common electrode 84 formed on the rear surface of the upper substrate 80a. In the color filter 82, the color filter layers of red (R), green (G), and blue (B) colors are arranged in a stripe form to transmit light of a specific wavelength band, thereby enabling color display. A black matrix (not shown) is formed between the color filters 82 of adjacent colors to absorb the light incident from the adjacent cells, thereby preventing the lowering of the contrast.

The TFT substrate 91 is formed so that the data line 99 and the gate line 94 are insulated from each other with the gate insulating film interposed therebetween on the front surface of the lower substrate 80b, and the TFT 90 is formed at the intersection thereof. do. The TFT 90 is composed of a drain electrode facing the source electrode with a channel portion including a gate electrode connected to the gate line 94, a source electrode connected to the data line 99, an active layer and an ohmic contact layer interposed therebetween. The TFT 90 is connected to the pixel electrode 92 through a contact hole penetrating the protective film. The TFT 90 selectively supplies the data signal from the data line 99 to the pixel electrode 92 in response to the gate signal from the gate line 94.

The pixel electrode 92 is positioned in a cell region divided by the data line 99 and the gate line 94 and is made of a transparent conductive material having high light transmittance. The pixel electrode 99 generates a potential difference from the common electrode 84 formed on the upper substrate 80a by the data signal supplied via the drain electrode. Due to this potential difference, the liquid crystal 86 located between the lower substrate 80b and the upper substrate 80a is rotated by dielectric anisotropy. Accordingly, the light supplied from the light source via the pixel electrode 92 is transmitted toward the upper substrate 80a.

The semiconductor layer, the gate insulating film, and the protective film of the liquid crystal display panel are deposited entirely on the substrate using a PECVD apparatus.

As described above, the plasma chemical vapor deposition apparatus according to the present invention prevents the flow of the substrate by the first support of the susceptor and the second support of the shadow frame, and at the same time prevents the substrate from flowing in the heating coil of the susceptor. Can be seated correctly. Accordingly, the deposited film may be uniformly formed on the substrate. In addition, in the plasma chemical vapor deposition apparatus according to the present invention, since the alignment pole of the susceptor is inserted into the alignment hole of the shadow frame, the susceptor and the shadow frame are accurately aligned.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

Claims (8)

Substrate, A susceptor supporting the substrate from below and having at least one alignment pole formed at a position corresponding to the outside of the substrate; A shadow frame supporting at least one edge of the substrate and having at least one alignment hole into which the alignment pole is inserted; And a support formed on at least one of the susceptor and the shadow frame at a position proximate to the side of the substrate, the support being alignable with respect to the substrate. The method of claim 1, The support is plasma chemical vapor deposition apparatus characterized in that formed to surround the edge of the substrate in the form of "L". The method of claim 2, The support is A first support formed on the susceptor to correspond to a lower edge of the substrate; And a second support formed on the shadow frame so as to correspond to an upper edge region of the substrate. The method of claim 3, wherein And the first and second supports are formed with the substrate at a predetermined distance therebetween. The method of claim 4, wherein Wherein the spacing between the substrate and the first support is wider than the spacing between the substrate and the second support. The method of claim 1, The alignment poles are formed in the corner region of the susceptor plasma chemical vapor deposition apparatus. The method of claim 1, Lift pins formed to correspond to both sides of the substrate to move the substrate up and down; A pin plate fixed to the lift pins to move the lift pins up and down; Plasma chemical vapor deposition apparatus characterized by further comprising a support shaft elevator for moving the susceptor up and down. The method of claim 1, And a heating coil is formed in a region of the susceptor in contact with the substrate.