KR20040086680A - Electrostatic chuck and method for manufacturing the same - Google Patents

Abstract

PURPOSE: An electrostatic chuck and a fabricating method thereof are provided to shorten a gap between the first dielectric and the second dielectric by reducing thickness of an electrode. CONSTITUTION: A wafer is loaded on an upper surface of a dielectric(110). An electrode(120) is formed on a bottom of the dielectric. A projection part is formed on a predetermined region of the electrode. The second dielectric(140) is formed on a surface of the electrode. A contact part is electrically connected to the projection part. The contact part penetrates the second dielectric. The thickness of the electrode is 10 to 50 micrometers. The electrode and the projection part are formed with the same material.

Description

Electrostatic chuck and method for manufacturing the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck and a method of manufacturing the same, and more particularly, to an electrostatic chuck including a dielectric facing each other and an electrode interposed therebetween and a method of manufacturing the same.

In general, a semiconductor device manufacturing process includes an oxidation process, a deposition process, and an etching process. These processes are performed by inserting a wafer into a chamber. At this time, it is important for the wafer to be clamped at high density in the chamber for smooth processing.

The clamping method of the wafer includes a mechanical method, a vacuum adsorption method and an electrostatic chuck method using electrostatic power, among which the electrostatic chuck method is most widely used.

A conventional electrostatic chuck (or electrostatic sheet) may be composed of a substrate, an electrode formed on the substrate, and a dielectric formed on the electrode, as disclosed in Korean Patent Laid-Open Publication No. 2002-58438, wherein the substrate and the dielectric are the same material. It can be configured as.

In addition, the substrate and the dielectric may be composed of an AlN film as disclosed in Korean Patent Laid-Open Publication No. 2002-59439, and the electrode may be formed of at least two metal materials as disclosed in Korean Patent Laid-Open Publication No. 2002-59440. .

The conventional electrostatic chuck 1 will be described in more detail with reference to FIG. 1.

As shown in FIG. 1, the substrate 10 is prepared. Here, the substrate 10 may be configured, for example, in an AlN-based ceramic sintered body, a semi-sintered body, or a green sheet without sintering. Hereinafter, the substrate 10 is referred to as a first dielectric.

An electrode 15 is formed on the first dielectric 10. The electrode 15 may be, for example, a material in which dissimilar metals such as nickel or cobalt are mixed with molybdenum, tungsten, or molybdenum (or tungsten). Here, the electrode 15 is formed by a known screen printing method using a conductive paste, and then formed into a thick film having a thickness of about 50 to 250 μm for contact with a contact portion connected to an external power source. Here, such screen printing schemes are known to those skilled in the art and are described in Screen and Screen Printing, published by the international Society for Hybrid Microelectronics, 1991, which is hereby incorporated by reference in its entirety.

The second dielectric 20 is formed on the first dielectric 10 on which the electrode 15 is formed. The second dielectric 20 has a surface on which the wafer 30 is seated, and is formed of AlN-based ceramic in the form of a green sheet. In this case, the green sheet is a raw state in which sintering is not performed, and the second dielectric 20 in the green sheet state may include a predetermined amount of binder to maintain a flat state.

Then, in order to electrically conduct the electrode 15 and the external power source 35, a predetermined portion of the first dielectric 10 is processed by a diamond drill to form the through hole 24.

Thereafter, the second dielectric 20 is sintered by thermal pressure at a temperature of 1850 ° C. and a pressure of 20 MPa, and then the electrode rod is inserted into the through hole 24 to form the contact portion 25.

As the electrostatic chuck 1 is applied with a predetermined voltage to the electrode 15 and the wafer 30, the wafer 30 is adsorbed onto the surface of the second dielectric 20 by electrostatic attraction.

However, the conventional electrostatic chuck has the following problems.

First, since the electrode 15 inside the conventional electrostatic chuck 10 is formed of a relatively thick film having a thickness of about 50 to 250 μm, the first dielectric 10 and the second dielectric 20 are formed at the portion where the electrode 15 is formed. The thickness of the electrode 15 is spaced apart. As such, when the distance between the first and second dielectrics 10 and 20 increases, the heat transfer characteristics between the first and second dielectrics 10 and 20 become poor, thereby causing the electrostatic chuck and the wafer 30 to generate heat. As a result, process efficiency is lowered.

In addition, since the electrode 15 is formed thick as described above, a large amount of paste having a high viscosity is required, so that impurities added in the paste are released during the sintering process of the second dielectric 20, thereby Cause contamination.

When the thickness of the electrode 15 is reduced in order to solve this problem, when the through hole is etched by the diamond drill, there is a burden of etching the through hole within an error range corresponding to the thickness of the electrode 15. There is a problem that the electrode 15 penetrates, causing a failure of the electrostatic chuck 1.

Meanwhile, the second dielectric 20 formed in the green sheet state includes a large amount of binder as described above, so that the binders may remain during subsequent sintering, whereby the color of the second dielectric 20 may vary. Can be uneven.

In addition, when the first dielectric body 10 is formed in a semi-sintered or unsintered state, the through-hole 24 is formed before the first and second dielectrics 10 and 20 are sintered. 1 The dielectric may shrink or relax to change the size of the through hole. For this reason, there is also a problem that cannot accurately control the area and the through-hole size of the exposed electrode. In addition, when the first dielectric material 10 is formed as a semi-sintered body or not sintered as described above, the height of the surface of the first dielectric material 10 is increased due to the change in the coefficient of thermal expansion of the first dielectric material 10 by sintering. Can be altered, resulting in poor contact with the electrode.

Accordingly, it is an object of the present invention to provide an electrostatic chuck that can thin the electrode to improve the heat transfer characteristics of the dielectric and prevent damage to the electrode.

In addition, another object of the present invention is to provide a method of manufacturing an electrostatic chuck which can minimize the influence of impurities in the paste as an electrode material by thinning the electrode.

1 is a cross-sectional view showing a conventional electrostatic chuck.

2 is a cross-sectional view showing the electrostatic chuck of the present invention.

3A to 3G are cross-sectional views for each process for explaining a method of manufacturing an electrostatic chuck according to the present invention.

(Explanation of symbols for the main parts of the drawing)

110: first dielectric 120: electrode

130: protrusion 140: second dielectric

150: through hole

In order to achieve the above object of the present invention, an electrostatic chuck according to an embodiment of the present invention includes a first dielectric having a wafer placed on an upper surface thereof. An electrode including a protrusion is formed at a predetermined portion of a bottom of the first dielectric, and a second dielectric is formed on a surface of the electrode. A contact portion is formed in the second dielectric to penetrate the second dielectric while being electrically connected to the protrusion.

In addition, the electrostatic chuck according to another embodiment of the present invention includes a first dielectric composed of an AlN sintered body in which a wafer is placed on an upper surface thereof, and an electrode having a protrusion is formed on a bottom of the first dielectric. . A second dielectric is formed on the surface of the electrode, and a contact portion is formed in the second dielectric to be electrically connected to the protrusion.

In this case, the electrode may be formed to a thickness of 10 to 50㎛, the electrode and the protrusion may be formed of the same material.

In this case, the electrode may be formed of a single metal such as Mo or W, or 0.1 to 5 wt% of Co or 0.1 to 5 wt% of Ni and 1 to 10 wt% of a material in which a material constituting the first dielectric is added. And 1 to 10 wt% of the first dielectric material.

In addition, the first and second dielectrics may be formed of the same material to enhance contact characteristics. In addition, the first dielectric may include 0.01 to 10 wt% of a sintering aid of Y ₂ O ₃ , Sm ₂ O ₃ , Ce ₂ O ₃ , La ₂ O _3, or a mixture of at least one of the above materials.

Moreover, the electrostatic chuck manufacturing method which concerns on another aspect of this invention forms a 1st dielectric material, and forms an electrode in the 1st dielectric surface. Then, a protrusion is formed on a predetermined portion of the electrode, and then a second dielectric is formed on the electrode having the protrusion, and the resultant is sintered. Thereafter, the second dielectric is processed to form a through hole exposing the protrusion, and then a contact portion is formed in the through hole to be electrically connected to the protrusion.

The forming of the first dielectric may include filling a ceramic in powder form with a predetermined mold, sintering the ceramic, and separating the sintered ceramic from the mold.

The first dielectric ceramic includes 0.01 to 10 wt% of a sintering aid of 95 to 99.99% of AlN and Y ₂ O ₃ , Sm ₂ O ₃ , Ce ₂ O ₃ , La ₂ O _3, or a mixture of at least one thereof. can do.

The sintering of the ceramic and the sintering of the resultant may be performed in an Ar, N ₂ , He gas, or a mixed gas atmosphere thereof at a pressure of 30 to 200 MPa and a temperature of 1600 to 1900 ° C.

The forming of the electrode may be formed by one method selected from among screen printing, vacuum deposition, ion plating, PVD, and CVD.

In addition, the forming of the protrusion may be performed by discharging the same material as that of the electrode to a predetermined portion of the electrode.

Between the forming of the protrusions and the forming of the second dielectric, heat treatment may be further performed at a temperature of 50 to 200 ° C. to enhance contact characteristics between the electrodes and the protrusions.

The forming of the second dielectric may include fixing the first dielectric on which the electrode is formed to a predetermined mold, and filling powder electrode for the second dielectric on the electrode, and sintering the resultant. After the step the mold is separated from the result.

The second dielectric powder ceramic is preferably the same as the first dielectric powder ceramic.

The forming of the through hole may include rotating the resultant by 180 ° so that the first dielectric faces upward, and forming the through hole by machining with a diamond drill to expose the protrusion of the electrode.

(Example)

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. Embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and the like of the elements in the drawings are exaggerated to emphasize a more clear description, and the elements denoted by the same reference numerals in the drawings means the same elements. In addition, where a layer is described as being "on" another layer or semiconductor substrate, a layer may exist in direct contact with the other layer or semiconductor substrate, or a third layer therebetween. Can be done.

2 is a cross-sectional view showing an electrostatic chuck according to the present invention, Figures 3a to 3g is a cross-sectional view for each process for explaining the method of manufacturing an electrostatic chuck according to the present invention.

The electrostatic chuck 100 of the present invention includes a first dielectric 110 that is a substrate as shown in FIG. 2. The first dielectric material 110 may be an AlN sintered body, and a material obtained by mixing at least one of Y ₂ O ₃ , Sm ₂ O ₃ , Ce ₂ O ₃ , La ₂ O ₃ , CaO or Ti, or a mixture thereof may be used. Can be added. At this time, the sintering aid may be added in about 0.01 to 10wt%, preferably 0.01 to 2wt%.

The first dielectric 110 may be a sintered body of Al ₂ O ₃ , SiC, Si ₃ N ₄ , BN instead of the AlN sintered body. However, in the case of Al ₂ O ₃ , the thermal conductivity is about 20 to 30% of AlN, and there is a problem in that the plasma resistance is weak, and SiC has to mix high resistance components such as high purity fine alumina in order to control the resistance. Si ₃ N ₄ has to be developed to improve the thermal conductivity, and further needs special equipment for sintering. In addition, since PBN has a disadvantage in that coating is difficult and its application range is limited, it is most suitable to use AlN. In addition, when manufacturing the 200 mm electrostatic chuck, the first dielectric 110 is preferably formed to have a thickness of 280 to 320 μm, preferably 300 μm, and when manufacturing the 300 mm electrostatic chuck, a size-specific variation may occur. To 600 μm thick.

The upper and lower surfaces of the first dielectric 110 are planarized, a wafer (not shown) is placed on the upper surface of the first dielectric 110, and an electrode 120 is formed on the lower surface. In this embodiment, the electrode 120 is formed to a thickness of 10 to 20㎛ thin film as compared with the conventional.

The electrode 120 is used as a material having a small difference in coefficient of thermal expansion from the first dielectric 110 to improve interfacial contact characteristics between the first dielectric 110 and the electrode 120.

In the electrode 120, 0.1 to 5 wt% of Ni and 1 to 10 wt% of AlN powder having the same AlN powder as the first dielectric composition, that is, about 1 to 10 wt% of AlN powder having a small amount of sintering aid added thereto. Added Mo paste material can be used.

In addition, the electrode 120 includes 1 to 10 wt% of a paste material containing 0.1 to 5 wt% of Co and 1 to 10 wt% of AlN powder having the same composition as the first dielectric composition, that is, a small amount of sintering aid added to W or W. W paste material added by about% may be used.

In addition, the electrode 120 is made of a metal such as WC, Ti, Pd, Ni, Mo-Mn, Pt, Ag, or a Fe-Co-Ni alloy or a conductive ceramic film such as MoC, Ti, TiC, TiN, SiC, ZrB _2, or the like. It may also be formed as.

The electrode 120 has a protrusion 130 formed at a predetermined portion. The protrusion 130 is not limited in thickness and diameter, but is preferably formed in a larger size than the contact portion to be formed later. The protrusion 130 is preferably formed of the same material as the electrode 120 to improve contact characteristics with the electrode 120.

The second dielectric 140 is formed on the surface of the electrode 120 having the contact portion 130. As the first dielectric 110, an AlN material may be used for the second dielectric 140 to improve contact characteristics with the first dielectric 110. At this time, the second dielectric 140 is composed of the composition of the first dielectric 110, that is, the content and type of sintering aid for controlling the volume resistivity and thermal conductivity, the sintering conditions (temperature, time pressure, atmosphere gas, etc.) and subsequent heat treatment. The characteristic change due to and the like may be partially different. According to the change of the composition, the second dielectric 140 may obtain a composition having a resistivity of 1 to 3 times larger or smaller than that of the first dielectric 110, and reduce cost by changing the grade of AlN, the main powder. can do.

The second dielectric 140 is provided with a through hole 150 exposing the protrusion 130. Although not shown in the drawing, a conductive material is inserted into the through hole 150 to form a contact portion. In this case, the through hole 150 preferably has a narrower diameter than the diameter of the protrusion 130 as described above.

In the electrostatic chuck of the present invention as described above, the electrode 120 is formed to have a relatively thin thickness, and the protrusion 130 having a relatively thick thickness is formed on a portion of the electrode 120 where the through hole 150 is formed. As a result, the distance between the first dielectric material 110 and the second dielectric material 140 is closer to the portion where the electrode 120 is formed, thereby improving heat transfer characteristics between the first and second dielectric materials 110 and 140. In addition, since the portion of the electrode 120 in which the through hole 150 is formed is formed relatively thick by the protrusion 130, it is easy to form the through hole 150.

Hereinafter, the electrostatic chuck manufacturing method of the present invention will be described with reference to FIGS. 3A to 3G.

First, as shown in FIG. 3A, a mold 107 suitable for manufacturing the first dielectric is prepared, and then, inside the mold 107, a ceramic 105 in powder form for forming the first dielectric is filled. The mold 107 is composed of a sintered body formed of graphite or BN, and the ceramic 105 in powder form for forming the first dielectric material contains about 95% to 99.99% of AlN and Y ₂ O ₃ , Sm ₂ O ₃ , Ce Sintering aids such as ₂ O ₃ , La ₂ O ₃ , CaO and Ti.

Thereafter, the ceramic 105 in powder form filled in the mold 107 is first sintered to form the first dielectric 110. Primary sintering is performed at a pressure of 30 to 200 MPa and a temperature of 1600 to 1900 ° C. in an Ar, N ₂ , He or mixed gas atmosphere when the diameter of the first dielectric 110 is about 200 to 300 mm in diameter. . At this time, in raising the temperature, it is preferable to increase the temperature at a rate of 0.1 to 10 ° C./min up to 1000 ° C., and a vacuum, an N ₂ gas atmosphere, or an Ar gas atmosphere may be formed. Further, the binder component of the raw material particles are removed from the pre-O ₂ or N ₂ gas atmosphere, and eliminate the effect of the carbon. Thereafter, the mold 107 is separated from the first dielectric 110 as shown in FIG. 3B. In some cases, a polishing process or a lapping process may be additionally performed to secure the flatness of the upper surface of the first dielectric 110. In addition, a groove may be formed on the lower surface of the first dielectric 110 on which the wafer is to be placed so that a cooling gas such as He may easily flow.

Referring to FIG. 3C, an electrode 120 is formed on the first sintered first dielectric 110. The electrode 120 is formed by a screen printing method using a paste, and is formed to have a thickness of 10 to 50 μm, more preferably 10 to 20 μm. In addition, the electrode 120 may be formed by vacuum deposition, ion plating, physical vapor deposition (PVD), and chemical vapor deposition (CVD) instead of the screen printing method described above.

In order to enhance the contact characteristics between the electrode 120 and the first dielectric 110, the electrode 120 may be formed of a material having a coefficient of thermal expansion similar to that of the first dielectric 110 or having a small difference in thermal expansion coefficient. For example, as described above, 0.1-5 wt% of Ni is added to Mo, Mo, or 0.1-5 wt% of Ni, and 1-10 wt% of AlN powder identical to the first dielectric composition is added to Mo. A material, a material in which 0.1 to 5 wt% of Co is added to W or W, or a paste material in which 1 to 10 wt% of AlN powder having the same amount of 0.1 to 5 wt% of Co and the first dielectric composition is added to W may be used. In addition, the electrode 120 is a metal such as WC, Ti, Pd, Ni, Mo-Mn, Pt, Ag, or a Fe-Co-Ni alloy or a conductive ceramic such as MoC, Ti, TiC, TiN, SiC, ZrB _2, or the like. Membranes may be used.

Next, as illustrated in FIG. 3D, the protrusion 130 is formed by discharging the paste material constituting the electrode 120 to a predetermined portion of the electrode 120. As described above, the protrusion 130 may be formed to be larger than the diameter of the through hole to be formed later. In addition, although the protrusion part 130 is formed in the center of the electrode 120 in a figure, it does not matter in any part of the electrode 120. FIG.

Then, in order to improve the contact characteristics of the electrode 120 and the protrusion 130, the electrode 120 and the protrusion 130 are heat-treated at a temperature of 50 to 200 ° C., preferably 80 to 110 ° C. do.

As shown in FIG. 3E, the structure of the first dielectric 110 on which the electrode 120 is formed is fixed to a predetermined mold 137. In this case, the mold may be the same as the mold in FIG. 3A. Thereafter, the AlN-based ceramic powder 135 is filled to a predetermined height to form a second dielectric on the surface of the first dielectric 110 on which the electrode 120 is formed.

As shown in FIG. 3F, the resultant filled with the AlN-based ceramic powder for the second dielectric is second sintered to form the second dielectric 140. Secondary sintering is carried out at temperatures of 1600 to 1900 ° C. at a pressure of 30 to 200 MPa, when the electrostatic chuck (area of the first and second dielectrics) is 200 to 300 mm in diameter, and can be run in an Ar, N ₂ , or He gas atmosphere. have. Next, the electrostatic chuck result is separated from the mold 137.

Thereafter, the resultant electrostatic chuck is inverted so that the first dielectric 110 is disposed thereon, and the second dielectric 140 is machined to expose the protrusion 130 to form the through hole 150. Preferably, the through hole 150 may be formed by diamond drill processing. When the through-hole 150 is formed, since the protrusion 140 having a relatively thick thickness is formed in the portion where the through-hole 150 is formed, not only does not prevent damage to the electrode 120, but also during diamond drilling, It is possible to prevent the electrode 120 from penetrating.

The electrostatic chuck 100 thus formed has a sintered density of 3.2 to 3.4 g / cc, an absorption of less than 0.01%, and a dielectric constant of 8.8 to 9.1 at 1 MHz. In addition, the electrostatic chuck 100 of the present invention has a volume resistance of 10 ¹² to 10 ¹⁴ Ω · cm, an insulation breakdown voltage of about 15 KV / mm, a bisque hardness of 1100 Hv, a bending strength of 230 to 300 MPa, and an elastic modulus of about 310 MPa. , Thermal expansion coefficient of about 4.5 × 10 ⁻⁶ / ° C., thermal conductivity of 180 W / mK, thermal diffusivity of 0.743 m ² / sec at 20 ° C., specific heat of 0.8 J / gK (100 ° C.) and crystals of 3 to 7 μm Have a particle size

As described in detail above, according to the present invention, the electrode of the electrostatic chuck is formed into a thin film of 10 to 50㎛, and a protrusion is formed in the portion where the through hole is formed so as to facilitate contact between the electrode and the electrode.

In this way, as the thickness of the electrode is reduced, the gap between the first and second dielectrics becomes narrower, thereby improving heat transfer characteristics and improving electrostatic power. In addition, by forming the electrode into a thin film, it is possible to reduce the amount of the paste constituting the electrode, it is possible to reduce the contamination of the electrostatic chuck due to the release of impurities added in the paste during electrode production.

On the other hand, by forming a protrusion to have a relatively thick thickness in the electrode portion where the through-hole is formed, it is possible to minimize the damage of the electrode due to machining.

In addition, since the through holes are formed after the first and second dielectrics are sintered, the shape of the through holes due to the sintering of the first and second dielectrics can be reduced.

In addition, since the second dielectric of the present invention is formed of a plate-shaped ceramic sintered body unlike the conventional green sheet state, the flatness of the electrode can be improved and the color unevenness due to the binder component can be improved. .

Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the scope of the technical idea of the present invention. .

Claims (28)

A first dielectric having a wafer placed on an upper surface thereof; An electrode formed on a bottom surface of the first dielectric and including a protrusion at a predetermined portion; A second dielectric formed on the surface of the electrode; And And a contact portion formed to penetrate the second dielectric while being electrically connected to the protrusion. The electrostatic chuck of claim 1, wherein the electrode has a thickness of 10 to 50 μm. The electrostatic chuck of claim 1, wherein the electrode and the protrusion are formed of the same material. The electrostatic chuck of claim 1, wherein the electrode is Mo or W. 5. The electrostatic method according to any one of claims 1 to 3, wherein the electrode is made of a material in which Mo is added to 0.1 to 5 wt% of Ni and 1 to 10 wt% of a material forming the first dielectric. chuck. The electrostatic method according to any one of claims 1 to 3, wherein the electrode is composed of a material in which W is added 0.1 to 5 wt% of Co and 1 to 10 wt% of a material forming the first dielectric. chuck. 2. The electrostatic chuck of claim 1, wherein said first and second dielectrics are formed of the same material. 8. The electrostatic chuck of claim 1 or 7, wherein the first dielectric is an AlN sintered body. 9. The method of claim 8, wherein the first dielectric comprises 0.01 to 10 wt% of a sintering aid of Y ₂ O ₃ , Sm ₂ O ₃ , Ce ₂ O ₃ , La ₂ O _3, or a mixture of at least one of the above materials. Electrostatic chuck characterized in that. The electrostatic chuck of claim 1, wherein a diameter of the contact portion is smaller than a diameter of the protrusion. A first dielectric composed of an AlN sintered body having a wafer placed on an upper surface thereof; An electrode formed on a bottom surface of the first dielectric and including a protrusion at a predetermined portion; A second dielectric formed on the surface of the electrode; And A contact portion formed to penetrate the second dielectric while being electrically connected to the protrusion, The electrode has a thickness of 10 to 50㎛, the electrostatic chuck, characterized in that the electrode and the protrusion is formed of the same material. 12. The electrostatic chuck of claim 11, wherein said electrode is Mo or W. 12. The electrostatic chuck of claim 11, wherein the electrode is made of a material in which 0.1 to 5 wt% of Ni and 1 to 10 wt% of the first dielectric are added to Mo. The electrostatic chuck of claim 11, wherein the electrode is made of a material in which W is added 0.1 to 5 wt% of Co and 1 to 10 wt% of the first dielectric. 12. The electrostatic chuck of claim 11, wherein said first and second dielectrics are formed of the same material. 12. The method of claim 11, wherein the first dielectric comprises 0.01 to 10 wt% of a sintering aid of Y ₂ O ₃ , Sm ₂ O ₃ , Ce ₂ O ₃ , La ₂ O _3, or a mixture of at least one of the above materials. Electrostatic chuck characterized in that. Forming a first dielectric; Forming an electrode on the first dielectric surface; Forming a protrusion on a predetermined portion of the electrode; Forming a second dielectric over the electrode having the protrusion; Sintering the resultant; Processing the second dielectric to form a through hole exposing the protrusion; And And forming a contact portion in the through hole to be electrically connected to the protrusion. The method of claim 17, wherein forming the first dielectric comprises: Filling a ceramic in powder form into a predetermined mold; Sintering the ceramic; And Electrostatic chuck manufacturing method comprising the step of separating the sintered ceramic from the mold. 19. The sintering aid of claim 18, wherein the first dielectric ceramic comprises 95 to 99.99% of AlN and Y ₂ O ₃ , Sm ₂ O ₃ , Ce ₂ O ₃ , La ₂ O _3, or a mixture of at least one thereof. Electrostatic chuck manufacturing method comprising a 0.01 to 10wt%. 20. The electrostatic chuck of claim 18 or 19, wherein the sintering step proceeds in an Ar, N ₂ , He gas, or a mixed gas atmosphere thereof at a pressure of 30 to 200 MPa and a temperature of 1600 to 1900 ° C. Manufacturing method. 18. The method of claim 17, wherein the forming of the electrode is performed by one of a screen printing method, a vacuum deposition method, an ion plating method, a PVD, and a CVD method. 22. The method of claim 21, wherein the electrode is formed to a thickness of 10 to 50㎛. The method of claim 17, wherein forming the protrusions, Electrostatic chuck manufacturing method characterized in that the molding by discharging the same material as the electrode on a predetermined portion of the electrode. 18. The method of claim 17, wherein forming the protrusions and forming the second dielectric, Electrostatic chuck manufacturing method characterized in that it further comprises the step of heat treatment at a temperature of 50 to 200 ℃ to enhance the contact characteristics between the electrode and the protrusion. 18. The method of claim 17, wherein forming the second dielectric comprises: Fixing the first dielectric on which the electrode is formed to a predetermined mold; And Filling a powder ceramic for a second dielectric on the electrode, After the step of sintering the resultant the electrostatic chuck manufacturing method characterized in that the mold is separated from the resultant. 27. The method of claim 25, wherein the second dielectric powder ceramic is the same as the first dielectric powder ceramic. 18. The method of claim 17, wherein the sintering of the resultant, electrostatic chuck manufacturing, characterized in that proceeds to the Ar, N ₂ , He gas or a mixed gas atmosphere at a pressure of 30 to 200MPa and a temperature of 1600 to 1900 ℃ Way. The method of claim 17, wherein the forming of the through hole comprises: Rotating the resultant 180 ° such that the first dielectric faces upward; And Electrostatic chuck manufacturing method comprising the step of forming a through-hole by processing by a diamond drill so that the protrusion of the electrode.