KR20040070674A - Method for monitoring particle in etch device - Google Patents
Method for monitoring particle in etch device Download PDFInfo
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- KR20040070674A KR20040070674A KR1020030006853A KR20030006853A KR20040070674A KR 20040070674 A KR20040070674 A KR 20040070674A KR 1020030006853 A KR1020030006853 A KR 1020030006853A KR 20030006853 A KR20030006853 A KR 20030006853A KR 20040070674 A KR20040070674 A KR 20040070674A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
본 발명은 식각 장비의 파티클 모니터링 방법에 관한 것으로, 특히 유니폴라형 정전척(ESC)을 갖춘 건식 식각(dry etch) 장비에 있어서, 챔버 내부의 측면(wall)이나 위쪽(dome)에서 발생되는 파티클 및 챔버 내부의 웨이퍼가 놓이는 아래쪽 파티클을 동시에 모니터링할 수 있도록 하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a particle monitoring method for etching equipment. Particularly, in a dry etching apparatus having a unipolar electrostatic chuck (ESC), particles generated from a wall or a dome inside a chamber are generated. And a method for simultaneously monitoring the lower particles on which the wafer inside the chamber is placed.
통상적으로, 식각 장비는 건식 및 습식 식각 장비로 구분되며, 이중 건식 식각 장비는 내부적으로 발생되는 파티클의 량이 많아짐에 따라 식각시 많은 결점(defect)을 발생하게 한다.Typically, the etching equipment is divided into dry and wet etching equipment, double dry etching equipment causes a large number of defects (defect) during etching as the amount of particles generated internally increases.
도 1을 참조하면, 도 1은 종래 식각 장비의 파티클 모니터링 방법을 수행하기 위한 도면이다.Referring to FIG. 1, FIG. 1 is a diagram for performing a particle monitoring method of a conventional etching apparatus.
즉, 챔버 내의 캐소드(cathode)(10) 위에 유니폴라형 정전척(20)이 위치하며, 이 정전척(20) 상에 파티클 체크용 웨이퍼(30)를 로딩(loading)한다.That is, the unipolar electrostatic chuck 20 is positioned on the cathode 10 in the chamber, and the wafer for particle check 30 is loaded on the electrostatic chuck 20.
이후, 챔버의 측면(wall)(60)이나 위쪽(dome)(50)에서 프로세스(process)에 사용되는 가스, 즉 메탈 식각 장비에서는가스(35)가 플로우(flow)되는 분위기 상태에서 발생되는 파티클을 모니터링을 진행한다.Afterwards, the gas used for the process on the wall 60 or the dome 50 of the chamber, ie the metal etching equipment, Particles generated in an atmospheric state in which gas 35 flows are monitored.
그러나, 상술한 모니터링 방법으로는 정전척 외부와 내부의 파티클 및 캐소드 단에서 발생되는 파티클을 모니터링 할 수 없어 파티클로 인한 챔버 내의 결점을 줄일 수 없게 되는 문제가 있다.However, the above-described monitoring method has a problem that it is impossible to monitor particles generated at the particles and cathode stages outside and inside the electrostatic chuck, so that defects in the chamber due to particles cannot be reduced.
따라서, 본 발명은 상술한 문제점을 해결하기 위하여 안출한 것으로, 그 목적은 유니폴라형 정전척(ESC)을 갖춘 건식 식각(dry etch) 장비에서 챔버 내부의 측면(wall)이나 위쪽(dome)에서 발생되는 파티클과, 챔버 내부의 웨이퍼가 놓이는 아래쪽 파티클, 즉 정전척 외부와 내부 및 캐소드 단에서 발생되는 파티클을 동시에 모니터링하여 파티클로 인한 챔버 내의 결점을 없앨 수 있도록 하는 식각 장비의 파티클 모니터링 방법을 제공함에 있다.Accordingly, the present invention has been made to solve the above-described problems, the object of which is to dry the etch (equal chuck) equipped with a etch (dry etch) equipment in the wall (wall) or the top (dome) inside the chamber It provides particle monitoring method of etching equipment to monitor the generated particles and the lower particles on which the wafer inside the chamber is placed, that is, the particles generated at the outside, inside and cathode stage of the electrostatic chuck, so that defects in the chamber caused by the particles can be eliminated. Is in.
이러한 목적을 달성하기 위한 본 발명에서 식각 장비의 파티클 모니터링 방법은 챔버 내의 캐소드(cathode) 위에 유니폴라형 정전척이 위치하며, 정전척 상에 파티클 체크용 웨이퍼를 로딩(loading)하는 단계; 파티클 체크용 웨이퍼가 로딩된 후, 챔버의 측면(wall)이나 위쪽(dome)에서 불활성 기체 가스를 플로우(flow)시키는 단계; 유니폴라형 정전척 상에 웨이퍼 백 사이드 쿨링 가스(backside cooling gas)를 플로우 하여 정전척 외부와 내부의 파티클 및 캐소드 단에서 발생되는 파티클이 챔버 내로 유입되어 파티클 체크용 웨이퍼 상에 흡착되어 파티클을 모티터링하는 단계를 포함하는 것을 특징으로 한다.Particle monitoring method of the etching equipment in the present invention for achieving this object is a unipolar electrostatic chuck is positioned on the cathode (cathode) in the chamber, the step of loading a wafer for particle check on the electrostatic chuck; After the particle check wafer is loaded, flowing an inert gas gas at a wall or a dome of the chamber; Wafer backside cooling gas flows on the unipolar electrostatic chuck, and particles generated at the inside and outside of the electrostatic chuck are introduced into the chamber and adsorbed onto the wafer for particle checking to form particles. And terminating.
도 1은 종래 식각 장비의 파티클 모니터링 방법을 수행하기 위한 도면이며,1 is a view for performing a particle monitoring method of a conventional etching equipment,
도 2는 본 발명에 따른 식각 장비의 파티클 모니터링 방법을 수행하기 위한 도면이다.2 is a view for performing a particle monitoring method of the etching equipment according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
10 : 캐소드 20 : 정전척10: cathode 20: electrostatic chuck
30 : 파티클 체크용 웨이퍼 40 : 아르곤(Ar) 가스30: wafer for particle check 40: argon (Ar) gas
50 : 챔버의 위쪽(dome) 60 : 챔버의 측면(wall)50: dome of the chamber 60: wall of the chamber
70 : 헬륨 플로우 라인 80 : 헬륨(He) 가스70 helium flow line 80 helium (He) gas
이하, 첨부된 도면을 참조하여 본 발명의 구성 및 동작에 대하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail the configuration and operation of the present invention.
도 2는 본 발명에 따른 식각 장비의 파티클 모니터링 방법을 수행하기 위한 도면이다.2 is a view for performing a particle monitoring method of the etching equipment according to the present invention.
즉, 챔버 내의 캐소드(cathode)(10) 위에 유니폴라형 정전척(20)이 위치하며, 이 정전척(20) 상에 파티클 체크용 웨이퍼(30)를 로딩(loading)한다.That is, the unipolar electrostatic chuck 20 is positioned on the cathode 10 in the chamber, and the wafer for particle check 30 is loaded on the electrostatic chuck 20.
파티클 체크용 웨이퍼(30)가 로딩된 후, 챔버의 측면(wall)(60)이나 위쪽(dome)(50)에서 프로세스(process)에 사용되는 가스를 불활성 기체인 아르곤(Ar) 가스(40)를 플로우(flow)시키고, 유니폴라형 정전척(20) 상에 웨이퍼 백 사이드 쿨링 가스(backside cooling gas)인 헬륨(He) 가스(80)를 헬륨 플로우 라인(70)을 통해 플로우한다.After the particle check wafer 30 is loaded, the gas used in the process at the wall 60 or the dome 50 of the chamber is an argon gas 40 which is an inert gas. Flows, and helium (He) gas 80, which is a wafer backside cooling gas, flows through the helium flow line 70 on the unipolar electrostatic chuck 20.
여기서, 헬륨(He) 가스(80)를 유니폴라형 정전척(20) 상에 플로우하기 위해 파티클 체크용 웨이퍼가 청킹(chucking)되어야 하고, 웨이퍼를 청킹하기 위해 정전척(20)에 청킹 전압이 인가되어야 하며, 청킹 전압이 인가되기 위해서는 RF 파워(power)를 챔버 내의 파티클 체크용 웨이퍼(30)에 전달해 주어야 한다.Here, the wafer for particle check must be chucked to flow the helium (He) gas 80 onto the unipolar electrostatic chuck 20, and the chucking voltage is applied to the electrostatic chuck 20 to chuck the wafer. In order to apply the chunking voltage, RF power must be transferred to the particle check wafer 30 in the chamber.
그리고, 파티클 체크용 웨이퍼(30)에 데미지(damage)를 주지 않으면서 RF 파워를 전달하기 위해 디커플드 플라즈마 소스(Decoupled Plasma Source, DPS) 방식의 소스 파워와 바이어스 파워에 1W 씩을 걸어주는 것이다.In addition, in order to deliver RF power without damaging the particle check wafer 30, a power of 1 W is applied to a source power and a bias power of a decoupled plasma source (DPS) method.
이러한 방식으로, 파티클 체크 시에 웨이퍼 백 사이드 쿨링 가스인 헬륨 가스(80)를 턴-온(turn-on)시켜 정전척(20) 상에 헬륨 가스(80)를 플로우할 수 있는 것이다.In this manner, the helium gas 80, which is the wafer back side cooling gas, may be turned on during the particle check to flow the helium gas 80 on the electrostatic chuck 20.
이때, 챔버 내부의 프로세스(process)에 아르곤(Ar) 가스(40)를 플로우(flow)해줄 경우, 웨이퍼 청킹(wafer chucking)이 완전하게 이루어지지 않아 웨이퍼 백 사이드 헬륨 리크(leak)가 다량으로 유발됨으로써, 정전척(20) 외부와 내부의 파티클 및 캐소드 단에서 발생되는 파티클이 챔버 내로 유입되어 파티클 체크용 웨이퍼(30) 상에 흡착되어 파티클을 모티터링 할 수 있는 것이다.At this time, when argon (Ar) gas 40 flows into the process inside the chamber, wafer chucking is not completely performed, causing a large amount of wafer back side helium leak. As a result, particles generated at the particles and cathode stages outside and inside the electrostatic chuck 20 are introduced into the chamber and adsorbed onto the particle check wafer 30 to monitor the particles.
그리고, 파티클 체크용 웨이퍼(30) 상에 흡착되는 파티클을 모티터링하기 위한 조건으로서, 챔버 압력은 8∼10mT이고, 소스 및 바이어스 RF 파워는 1/1W이며, 가스는 아르곤 30∼70sccm이며, ESC 청킹 전압은 1800∼2000V이며, 백 사이드 헬륨 압력은 10T이며, 시간은 30sec이다.As a condition for monitoring particles adsorbed on the particle check wafer 30, the chamber pressure is 8-10 mT, the source and bias RF power is 1 / 1W, the gas is 30-70 sccm of argon, and the ESC The chunking voltage is 1800-2000V, the backside helium pressure is 10T, and the time is 30sec.
상기와 같이 설명한 본 발명은 유니폴라형 정전척(ESC)을 갖춘 건식 식각(dry etch) 장비에서 챔버 내부의 측면(wall)이나 위쪽(dome)에서 발생되는 파티클과, 챔버 내부의 웨이퍼가 놓이는 아래쪽 파티클, 즉 정전척 외부와 내부 및 캐소드 단에서 발생되는 파티클을 동시에 모니터링함으로써, 파티클로 인한 챔버 내의 결점을 줄일 수 있는 효과가 있다.The present invention as described above is a particle generated from the side (wall) or the top (side) of the inside of the chamber in a dry etch equipment having a unipolar electrostatic chuck (ESC), the bottom of the wafer inside the chamber By simultaneously monitoring the particles, i.e. particles generated at the outside and inside the electrostatic chuck and the cathode stage, there is an effect to reduce the defects in the chamber due to the particles.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7170602B2 (en) | 2004-04-08 | 2007-01-30 | Tokyo Electron Limited | Particle monitoring device and processing apparatus including same |
KR100835419B1 (en) * | 2007-04-09 | 2008-06-04 | 동부일렉트로닉스 주식회사 | Method for manufacturing particle wafer to measure cleaning effect |
CN104882358A (en) * | 2014-02-28 | 2015-09-02 | 无锡华润上华科技有限公司 | Method for detecting polymer in etching chamber |
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2003
- 2003-02-04 KR KR1020030006853A patent/KR100559620B1/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7170602B2 (en) | 2004-04-08 | 2007-01-30 | Tokyo Electron Limited | Particle monitoring device and processing apparatus including same |
KR100835419B1 (en) * | 2007-04-09 | 2008-06-04 | 동부일렉트로닉스 주식회사 | Method for manufacturing particle wafer to measure cleaning effect |
CN104882358A (en) * | 2014-02-28 | 2015-09-02 | 无锡华润上华科技有限公司 | Method for detecting polymer in etching chamber |
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