KR20040069771A - Wafer and Method for coating photo resist in semiconductor manufacturing system - Google Patents
Wafer and Method for coating photo resist in semiconductor manufacturing system Download PDFInfo
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- KR20040069771A KR20040069771A KR1020030006311A KR20030006311A KR20040069771A KR 20040069771 A KR20040069771 A KR 20040069771A KR 1020030006311 A KR1020030006311 A KR 1020030006311A KR 20030006311 A KR20030006311 A KR 20030006311A KR 20040069771 A KR20040069771 A KR 20040069771A
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- 238000000576 coating method Methods 0.000 title claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 30
- 239000011248 coating agent Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000004065 semiconductor Substances 0.000 title abstract description 6
- 239000010410 layer Substances 0.000 claims description 5
- 239000011247 coating layer Substances 0.000 claims description 2
- 238000009826 distribution Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
- B01D35/30—Filter housing constructions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D39/00—Filtering material for liquid or gaseous fluids
- B01D39/08—Filter cloth, i.e. woven, knitted or interlaced material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D39/00—Filtering material for liquid or gaseous fluids
- B01D39/14—Other self-supporting filtering material ; Other filtering material
- B01D39/16—Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D39/00—Filtering material for liquid or gaseous fluids
- B01D39/14—Other self-supporting filtering material ; Other filtering material
- B01D39/20—Other self-supporting filtering material ; Other filtering material of inorganic material, e.g. asbestos paper, metallic filtering material of non-woven wires
- B01D39/2055—Carbonaceous material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D39/00—Filtering material for liquid or gaseous fluids
- B01D39/14—Other self-supporting filtering material ; Other filtering material
- B01D39/20—Other self-supporting filtering material ; Other filtering material of inorganic material, e.g. asbestos paper, metallic filtering material of non-woven wires
- B01D39/2068—Other inorganic materials, e.g. ceramics
- B01D39/2072—Other inorganic materials, e.g. ceramics the material being particulate or granular
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D63/00—Apparatus in general for separation processes using semi-permeable membranes
- B01D63/02—Hollow fibre modules
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/08—Hollow fibre membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/02—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
- B01J20/20—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising free carbon; comprising carbon obtained by carbonising processes
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/44—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2201/00—Details relating to filtering apparatus
- B01D2201/29—Filter cartridge constructions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2201/00—Details relating to filtering apparatus
- B01D2201/40—Special measures for connecting different parts of the filter
- B01D2201/4092—Threaded sections, e.g. screw
Abstract
Description
본 발명은 반도체 제조설비의 포토레지스트 코팅방법에 관한 것으로, 더욱 상세하게는 두꺼운 레지스트 코팅의 경우에도 코팅 균일도를 높일 수 있도록 된 포토레지스트 코팅바법에 관한 것이다.The present invention relates to a photoresist coating method of a semiconductor manufacturing equipment, and more particularly to a photoresist coating bar method that can improve the coating uniformity even in the case of thick resist coating.
통상 반도체 제조설비 중 포토레지스트 코팅장비는 포토레지스트가 담겨지고 일측으로 질소가압라인이 착탈가능하게 설치되는 저장통과, 이 저장통과 포토레지스트 분사용 노즐 사이에 연결되어 포토레지스트가 유통되는 공급라인, 이 공급라인 상에 차례로 설치되는 버퍼탱크와 상기 공급라인을 개폐하는 메인밸브, 포토레지스트 공급용 펌프 및 포토레지스트 필터와 백밸브를 포함하는 코팅액 공급부와,웨이퍼 코팅이 이루어지는 챔버와 이 챔버 내에 설치되어 웨이퍼가 놓여지는 회전판을 포함하는 코팅부를 포함하여 이루어진다.Usually, photoresist coating equipment of semiconductor manufacturing equipment includes a storage container in which photoresist is contained and a nitrogen pressure line is detachably installed on one side thereof, and a supply line connected between the storage container and the nozzle for photoresist injection, wherein the photoresist is distributed. A buffer tank sequentially installed on a supply line, a main valve for opening and closing the supply line, a coating liquid supply unit including a photoresist supply pump, a photoresist filter and a back valve, a chamber in which wafer coating is performed, and a wafer installed in the chamber It comprises a coating comprising a rotating plate on which is placed.
상기와 같이 구성되어 있는 포토레지스트 코팅장비는 저장통 내에 담겨져 있는 포토레지스트가 일단 버퍼탱크에 수납되고 수납된 포토레지스트는 펌프의 작동과 메인밸브의 개폐에 따라 공급라인을 따라 이송되어 포토레지스트 필터와 백밸브를 거친 후 노즐을 통해 챔버의 회전판 상부에 놓여진 웨이퍼에 분사된다.The photoresist coating equipment configured as described above has the photoresist contained in the storage container once received in the buffer tank and the received photoresist is transferred along the supply line according to the operation of the pump and the opening and closing of the main valve. After passing through the valve, it is injected through the nozzle onto the wafer placed on the rotating plate of the chamber.
그런데 종래에는 고에너지 이온주입(high energy ion implantation) 공정이나 패드 오픈(pad open) 공정에서와 같이 2마이크로미터 이상의 두꺼운 레지스트 패턴을 요하는 경우 점도가 매우 큰 레지스트를 회전식 코팅(spin coating)으로 한번 도포해서 사용하므로 웨이퍼 내의 레지스트 두께가 일정치 않게 되는 문제가 있다.However, in the related art, when a thick resist pattern of 2 micrometers or more is required, such as in a high energy ion implantation process or a pad open process, a highly viscous resist is once coated with a spin coating. There is a problem that the thickness of the resist in the wafer becomes inconsistent because it is applied and used.
도 1은 종래의 코팅 방법에 따라 레지스트가 웨이퍼에 코팅되어 레지스트의 두께가 일정치 않는 경우를 도시한 것으로, 점도가 큰 레지스트(50)를 회전식 코팅 방법으로 한번에 코팅하는 경우 웨이퍼(51) 회전에 대한 레지스트 흐름의 유동성 및 반응성이 떨어져 결과적으로 웨이퍼(51) 내에서 불균일한 두께 분포를 갖게 되고 따라서 레지스트 패턴 형태는 물론 씨디(critical dimension)도 균일하지 못하게 된다.FIG. 1 illustrates a case in which a resist is coated on a wafer according to a conventional coating method so that the thickness of the resist is not constant. When the resist 50 having a high viscosity is coated at a time by a rotary coating method, the wafer 51 may be rotated. The flowability and reactivity of the resist flow with respect to this result in the non-uniform thickness distribution in the wafer 51, and thus the resist pattern shape as well as the critical dimension are not uniform.
즉, 레지스트 두께는 패턴 형성에 필요한 노광 에너지를 변화시키므로 웨이퍼 내에서의 균일한 패턴 형성을 위해서는 두께 균일도가 매우 중요한 데, 2마이크로미터 이상의 레지스트 코팅의 경우 종래의 방법으로는 패턴 형성 자체가 힘들 정도로 두께가 불균일하게 된다.That is, the resist thickness changes the exposure energy required to form the pattern, so the thickness uniformity is very important for uniform pattern formation in the wafer. For resist coatings of 2 micrometers or more, the pattern formation itself is difficult to achieve by the conventional method. The thickness becomes nonuniform.
이와같이 웨이퍼 내의 레지스트 두께가 일정치 않아 노광에너지(exposure energy)가 부족하거나 반대로 지나친 영역이 발생하기 때문에 최종 레지스트 패턴이 균일하지 못하며 심한 경우 패턴이 전혀 형성되지 않는 불량까지 발생하게 된다.As such, since the resist thickness in the wafer is not constant and the exposure energy is insufficient or the region is excessive, the final resist pattern is not uniform and, in severe cases, even a defect in which the pattern is not formed is generated.
이에 본 발명은 상기와 같은 제반 문제점을 해결하기 위하여 안출된 것으로, 2마이크로미터 이상의 레지스트 두께를 요하는 공정에서 점도가 낮은 레지스트를균일하게 코팅할 수 있도록 하여 패턴 균일도를 향상시킬 수 있는 반도체 제조설비의 포토레지스트 코팅방법을 제공함에 그 목적이 있다.Accordingly, the present invention has been made to solve the above-mentioned problems, semiconductor manufacturing equipment that can improve the pattern uniformity by uniformly coating a low viscosity resist in a process requiring a resist thickness of more than 2 micrometers Its purpose is to provide a photoresist coating method.
도 1은 종래의 포토레지스트 코팅방법에 의해 웨이퍼에 포토레지스트가 코팅된 상태를 도시한 개략적인 단면도,1 is a schematic cross-sectional view showing a state in which a photoresist is coated on a wafer by a conventional photoresist coating method;
도 2는 본 발명의 포토레지스트 코팅방법에 의해 웨이퍼에 포토레지스트가 코팅된 상태를 도시한 개략적인 단면도이다.2 is a schematic cross-sectional view showing a state in which a photoresist is coated on a wafer by the photoresist coating method of the present invention.
상기한 바와 같은 목적을 달성하기 위하여 본 발명은, 점도가 낮은 레지스트를 적어도 2회 이상 횟수로 반복 코팅하는 것을 특징으로 한다.In order to achieve the above object, the present invention is characterized in that the coating of the resist having a low viscosity at least twice a number of times.
여기서 상기 레지스트의 점도는 코팅되는 횟수에 관련되는 데, 통상의 레지스트 점도를 100%로 하였을 때 이 값을 코팅 휫수로 나눈 값으로 정해진다. 예컨데, 2회 코팅하는 경우에는 통상의 레지스트 점도의 100/2%의 점도를 갖는 레지스트가 사용되며, 3회 코팅시는 100/3%의 점도를 갖는 레지스트가 사용된다.Here, the viscosity of the resist is related to the number of coatings, which is determined by dividing this value by the number of coatings when the typical resist viscosity is 100%. For example, in the case of two coatings, a resist having a viscosity of 100/2% of a typical resist viscosity is used, and in a third coating, a resist having a viscosity of 100/3% is used.
이하 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 1은 본 발명의 포토레지스트 코팅방법에 의해 웨이퍼에 포토레지스트가코팅된 상태를 도시한 개략적인 단면도이다.1 is a schematic cross-sectional view showing a state in which a photoresist is coated on a wafer by the photoresist coating method of the present invention.
상기 도면에 의하면 웨이퍼(10) 상부에 코팅되는 레지스트(20)가 한 층으로 이루어진 것이 아니라 두께가 얇은 다수의 층으로 이루어져 있음을 확인할 수 있다.According to the drawing it can be seen that the resist 20 coated on the wafer 10 is not made of one layer but made of a plurality of thin layers.
이를 위해 코팅장비의 레지스트가 저장된 저장통으로부터 노즐로 레지스트를 공급하고 챔버 내부에 놓여진 웨이퍼 상부에 레지스트를 분사하여 웨이퍼 상부를 레지스트로 코팅하는 일련의 과정을 여러분 반복하여 웨이퍼 상부에 다중의 레지스트 코팅층을 형성하게 된다.To this end, a series of processes of coating the top of the wafer with the resist by supplying the resist to the nozzle from the reservoir where the resist of the coating equipment is stored and spraying the resist on the wafer placed inside the chamber form a plurality of resist coating layers on the wafer. Done.
이때 웨이퍼(10)에 코팅되는 레지스트(20)는 점도가 종래와 비교하여 낮은 레지스트가 사용되며 레지스트의 바람직한 점도는 통상의 레지스트 점도를 100%로 하였을 때 이 값을 코팅 휫수로 나눈 값으로 정해진다.At this time, the resist 20 coated on the wafer 10 has a lower viscosity than the conventional one, and the preferred viscosity of the resist is determined by dividing this value by the number of coatings when the typical resist viscosity is 100%. .
이와같이 2마이크로미터 이상의 레지스트 두께를 요하는 공정에서 점도가 큰 레지스트를 한번에 코팅하는 대신 점도가 낮은 레지스트를 여러번에 나누어서 코팅하게 되므로 각각의 코팅 공정시 낮은 점도에 따른 회전 민감도에 의해 양호한 두께의 균일도를 얻을 수 있게 된다.Thus, in the process requiring a resist thickness of 2 micrometers or more, instead of coating a high viscosity resist at a time, the low viscosity resist is coated several times, so that the uniformity of good thickness is achieved by the rotational sensitivity according to the low viscosity in each coating process. You can get it.
또한, 여러 층이 쌓여져 하나의 레지스트막을 이루게 됨으로써 각 층의 불균일도도 중첩, 상쇄되며 따라서 종래와 비교하여 더욱 균일한 두께 분포를 얻을 수 있고 최종적으로 현상 공전 후의 패턴 균일도를 향상시킬 수 있게 되는 것이다.In addition, by stacking several layers to form a single resist film, the nonuniformity of each layer is also superimposed and canceled, so that a more uniform thickness distribution can be obtained compared to the conventional one, and finally, the pattern uniformity after development revolution can be improved. .
이상 설명한 바와 같은 본 발명에 따른 반도체제조설비의 포토레지스트 코팅방법에 의하면, 점도가 낮은 레지스트를 반복해서 적층 코팅함으로써 2마이크로미터 이상의 두께를 갖는 레지스트 코팅의 경우에도 균일한 레지스트 두께 분포를 얻을 수 있고 이에 따라 패턴 균일도를 향상시킬 수 있고 양호한 씨디를 얻을 수 있게 된다.According to the photoresist coating method of the semiconductor manufacturing equipment according to the present invention as described above, even in the case of a resist coating having a thickness of 2 micrometers or more by repeatedly laminating a low viscosity resist, a uniform resist thickness distribution can be obtained. Thereby, pattern uniformity can be improved and a favorable CD can be obtained.
Claims (3)
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| KR10-2003-0006311A KR100497209B1 (en) | 2003-01-30 | 2003-01-30 | Wafer and Method for coating photo resist in semiconductor manufacturing system |
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