KR20040062926A - The colloidal silica slurry for semiconductor-polishing which is consisted big sized particles and the process of slurry - Google Patents
The colloidal silica slurry for semiconductor-polishing which is consisted big sized particles and the process of slurry Download PDFInfo
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- KR20040062926A KR20040062926A KR1020040045948A KR20040045948A KR20040062926A KR 20040062926 A KR20040062926 A KR 20040062926A KR 1020040045948 A KR1020040045948 A KR 1020040045948A KR 20040045948 A KR20040045948 A KR 20040045948A KR 20040062926 A KR20040062926 A KR 20040062926A
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- colloidal silica
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 239000008119 colloidal silica Substances 0.000 title claims abstract description 38
- 239000002245 particle Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005498 polishing Methods 0.000 title claims abstract description 30
- 239000002002 slurry Substances 0.000 title claims abstract description 27
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 33
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 239000004115 Sodium Silicate Substances 0.000 claims abstract description 10
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052911 sodium silicate Inorganic materials 0.000 claims abstract description 10
- 238000003860 storage Methods 0.000 claims abstract description 10
- 238000001914 filtration Methods 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims abstract description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 claims description 9
- 230000008929 regeneration Effects 0.000 claims description 7
- 238000011069 regeneration method Methods 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 229910001415 sodium ion Inorganic materials 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- 150000002500 ions Chemical group 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000006467 substitution reaction Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- -1 hydrogen ions Chemical class 0.000 claims 1
- 230000008719 thickening Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 description 13
- 238000009826 distribution Methods 0.000 description 6
- 229910021485 fumed silica Inorganic materials 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 208000032765 Device extrusion Diseases 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 201000006549 dyspepsia Diseases 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 208000024798 heartburn Diseases 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005325 percolation Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 208000024981 pyrosis Diseases 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Silicon Compounds (AREA)
Abstract
Description
본 발명은 반도체 웨이퍼의 표면을 정밀하게 연마할 때에 사용하는 연마제 및 그 제조방법에 관한 것으로, 특히 화학적 기계적 연마(이하, "CMP(Chemical Mechanical Polishing)"라 함)법에 준하는 연마제에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an abrasive used to precisely polish the surface of a semiconductor wafer and a method of manufacturing the same, and more particularly to an abrasive according to the chemical mechanical polishing (hereinafter referred to as "CMP (Chemical Mechanical Polishing)") method.
CMP법은 1980년대 말 미국 IBM에서 기계적 제거가공과 화학적인 제거가공을 하나의 가공 방법으로 혼합한 새로운 연마공정으로서 개발한 것으로 기존의 기계적인 연마방식은 가공 변질층이 형성이 되는데 이러한 변질층은 반도체 칩(chip) 상의 결점이 되며 화학적인 연마는 변질층이 생성되지는 않지만 평탄화(planarization) 된 형상 즉 형상정밀도를 얻을 수가 없으며 단순히 평활한 면만을 얻을 수밖에 없다. 이러한 두 가지 공정의 장점들을 잘 접목시켜 대상체를 연마하는 것이 CMP의 기본 개념이다.The CMP method was developed in the late 1980s by IBM in the US as a new polishing process that combines mechanical removal and chemical removal into a single processing method. In the conventional mechanical polishing method, a modified layer is formed. It is a defect on a semiconductor chip, and chemical polishing does not produce a deteriorated layer, but a planarized shape, that is, shape precision, cannot be obtained, and only a smooth surface can be obtained. Polishing the object by combining the advantages of these two processes is the basic concept of CMP.
CMP 적용 공정에는 ①Si Wafer Mirror Polishing - 규소(Si) 웨이퍼 제조 공정 ②Oxide CMP 공정 - 평탄화 목적으로 절연막 연마 ③Metal(W) CMP 공정 - Yield(연마율) 개선 목적으로 W Plug 공정대체 ④STI CMP 공정 - 좁은 지역 분리(Isolation)목적으로 Oxide & Nitride Polishing, Oxide to Nitride Selectivity 확보, Oxide Dishing 최소화 ⑤AI CMP 공정 - 물결(damascene)구조를 이용한 Metal Etch 공정 대체, 화학적 공격에 의한 디싱(dishing) 정도 최소화 ⑥AI CMP 공정 - 물결구조를 이용한 Metal Etch 공정 대체 ⑦Poly Si CMP 공정 - Pre Poly Plug(3P) 형성 공정으로 Poly Si to Oxide Selectivity 확보, 우수한 Post Cleaning 효과 및 Oxide 표면 Scratch 최소화 등이 있다. For CMP application process: ① Si Wafer Mirror Polishing-Silicon wafer manufacturing process ② Oxide CMP process-Polishing of insulating film for planarization ③ Metal (W) CMP process-Substituting W Plug process for yield improvement ④ STI CMP process-Small area Oxide & Nitride Polishing, Oxide to Nitride Selectivity, Minimize Oxide Dishing for Isolation ⑤ AI CMP Process-Substitute Metal Etch Process using Damascene Structure, Minimize Dishing by Chemical Attack ⑥ AI CMP Process- Alternative to Metal Etch Process using Wavy Structure ⑦Poly Si CMP Process-Pre Poly Plug (3P) Formation Process to secure Poly Si to Oxide Selectivity, excellent Post Cleaning effect and Minimize Oxide surface scratch.
ILD(InterLayer Dielectric : 층간절연막) CMP와 Metal CMP는 디바이스(device) 층의 모든 표면에서 계속적으로 적용이 되어져야 하며 3차원의 형상정도를 얻기 위해서 각 층의 광역적인 평탄화를 형성하는 역할을 한다.ILD (InterLayer Dielectric) CMP and Metal CMP must be applied continuously on all surfaces of the device layer and form the global planarization of each layer to obtain three-dimensional shape.
도 1과 도 2를 통하여 일반적인 CMP공정을 개략적으로 살펴보면,웨이퍼(wafer)는 패드(pad : 기계적 연마 요소를 갖는 연마포)와 슬러리(slurry : 화학적 연마 요소를 갖는 연마 완충제)에 의해서 연마되어지며 패드가 부착되어진 연마 테이블(table)은 단순한 회전운동을 하고 헤드(head)부는 회전운동과 요동운동을 동시에 행하며 일정한 압력으로 가압을 하여 준다. 웨이퍼는 표면장력 또는 진공에 의해서 헤드부에 장착되어지고, 헤드부의 자체하중과 인가되는 가압력에 의해 웨이퍼 표면과 패드는 접촉하게 되고 이 접촉면 사이의 미세한 틈(패드의 기공부분) 사이로 가공액인 슬러리가 유동을 하여 슬러리 내부에 있는 연마입자와 패드의 표면돌기들에 의해 기계적인 제거작용이 이루어지고 슬러리 내의 화학성분에 의해서는 화학적인 제거작용이 이루어진다. CMP 공정에서 패드와 웨어퍼간의 가압력에 의해 디바이스 돌출부의 상부에서부터 접촉이 이루어지고 이 부분에 압력이 집중되어 상대적으로 높은 표면제거 속도를 가지게 되며, 가공이 진행되어 갈수록 요출부는 줄어들어 전 면적에 걸쳐 균일하게 제거되어진다.1 and 2, the wafer is roughly polished by a pad (a polishing cloth having a mechanical polishing element) and a slurry (a polishing buffer having a chemical polishing element). The polishing table attached to the pad performs a simple rotational movement, and the head part simultaneously performs the rotational movement and the oscillation movement and pressurizes at a constant pressure. The wafer is mounted on the head part by surface tension or vacuum, and the surface of the head and the pad are brought into contact with each other by the self-load of the head part and the pressing force applied, and the slurry which is the processing liquid between the minute gaps (pores of the pad) between the contact surfaces The flow is mechanically removed by the abrasive particles in the slurry and the surface protrusions of the pad, and chemically by the chemical components in the slurry. In the CMP process, contact is made from the upper part of the device protrusion by the pressing force between the pad and the wafer, and the pressure is concentrated on this part to have a relatively high surface removal rate. Is removed.
CMP의 화학 작용에서 가장 중요한 부분이 연마제의 역할로서, 반도체 생산량과 직접적인 연관이 있는 연마율을 높이는 기술은 화학약품으로서만 가능한 현실이다. 전 세계적으로 반도체 연마제용으로 silica를 많이 사용하고 있으며, 주로 fumed silica 및 colloidal silica로 구분되어진다. 반도체 연마제로서의 가장 중요한 요소는 연마율, defect 및 uniformity 등이 있으며, 현재 defect 및 uniformity는 많은 연구개발을 통하여 증진되었지만 반도체 생산량과 직접 관련된 연마율을 증가시키는 기술은 화학약품으로서만 가능하다.The most important part of the chemistry of CMP is the role of abrasives, and the technology of increasing the polishing rate, which is directly related to semiconductor production, is a reality only possible with chemicals. Worldwide, silica is widely used for semiconductor abrasives. It is mainly divided into fumed silica and colloidal silica. The most important factors for semiconductor abrasives are polishing rate, defect and uniformity, and current defects and uniformity have been improved through many research and development, but the technology of increasing polishing rate directly related to semiconductor production is possible only with chemicals.
이에 연마제의 전반적인 기능을 상승시켜 기존보다 연마율은 높이고, 결함율은 낮추며, 120㎚이상의 입자크기를 제조하여도 아주 균일한 입도 분포도를 나타내어 주고, 장기간 안정하게 사용가능하고, 친환경적인, 반도체 웨이퍼용 연마제의 개발이 절실한 실정이다.Therefore, the overall function of the abrasive is increased to increase the polishing rate, lower the defect rate, and exhibit a very uniform particle size distribution even when producing a particle size of 120 nm or more, and can be used stably for a long time, and is an environmentally friendly semiconductor wafer. There is an urgent need for the development of an abrasive for use.
이에 본 발명에서는 반도체용 연마제를 제조함에 있어 기존보다 연마율이 증대되고, 큰 입자에서도 균일한 입도 분포도를 나타내어 주고, fumed silica에 비해 안정성 유지가 월등하게 뛰어나고 환경유해물질을 거의 포함하고 있지 않아 친환경적인 콜로이달 실리카 슬러리 연마제를 제조하는 공정법에 그 기술적 과제를 두고 있다.Therefore, in the present invention, the polishing rate is increased in the manufacture of a semiconductor abrasive, and evenly shows a uniform particle size distribution even in large particles, excellent stability maintenance compared to fumed silica and contains little environmentally harmful substances The technical problem is placed in a process for producing a conventional colloidal silica slurry abrasive.
도 1은 일반적인 CMP 공정의 개략도1 is a schematic diagram of a typical CMP process
도 2는 일반적인 CMP 장비의 개략도2 is a schematic diagram of a typical CMP equipment
도 3은 본 발명에 의한 공정흐름도3 is a process flow chart according to the present invention
도 4는 본 발명의 연마율 테스트결과4 is a polishing rate test results of the present invention
도 5는 본 발명 입자의 확대 사진5 is an enlarged photograph of the present invention particles
도 1은 일반적인 CMP 공정의 개략도이고, 도 2는 일반적인 CMP 장비의 개략도이며, 도 3은 본 발명에 의한 공정흐름도이며, 도 4는 본 발명의 연마율 테스트결과이며, 도 5는 본 발명 입자의 확대 사진으로서 본 발명을 상세히 설명하면 다음과 같다.1 is a schematic diagram of a general CMP process, FIG. 2 is a schematic diagram of a general CMP apparatus, FIG. 3 is a process flow chart according to the present invention, FIG. 4 is a polishing rate test result of the present invention, and FIG. Hereinafter, the present invention will be described in detail as an enlarged photograph.
반도체 연마제용으로 슬러리(slurry)를 많이 사용하고 있으며 제조방법에 따라 주로 퓸드 실리카(fumed silica) 및 콜로이달 실리카(colloidal silica)로 구분하여 사용하고 있다. 본 발명에서는 콜로이달 실리카 연마제에 관한 것으로 우선, 상기 두 슬러리를 하기 표로서 비교해 보았다.Slurry is widely used for semiconductor abrasives and is mainly classified into fumed silica and colloidal silica according to the manufacturing method. The present invention relates to a colloidal silica abrasive, and first of all, the two slurries were compared in the following table.
콜로이달 실리카는 규산용액의 이온 변화법으로 제조하며 비교적 비용이 비싸고 금속 오염이 많이 포함되어 있었다는 단점이 있으나 입자가 균일하고 안정성이 매우 높은 장점을 가지고 있으며, 이와는 반대로 퓸드 실리카는 입자균일성이 낮고 안정성이 6개월을 넘지 못한다.Colloidal silica is manufactured by ion-change method of silicic acid solution and has the disadvantage that it is relatively expensive and contains a lot of metal contamination. However, colloidal silica has the advantage of uniform and stable particles. On the contrary, fumed silica has low particle uniformity and Stability is not more than six months.
본 발명은 콜로이달 실리카 슬러리에 관한 것으로 도 3과 공정조건표로서 공정과정을 설명하자면,The present invention relates to a colloidal silica slurry. Referring to FIG.
1. 규산소다(SiO2Na2O) 저장탱크에서는 원재료로서 알칼리성인 규산소다를저장하고 이를 수지탱크로 보낸다.1. Sodium silicate (SiO 2 Na 2 O) storage tank stores alkaline sodium silicate as raw material and sends it to resin tank.
2. 염산저장탱크는 수지재생을 하고 재생 후 나오는 염산을 수처리공정에서 정화한다.2. Hydrochloric acid storage tank recycles resin and purifies hydrochloric acid after regeneration in water treatment process.
수지재생은 염산의 수소이온(H+)과 수지의 나트륨이온(Na+)간의 이온치환법에 의하며 염산의 저장량은 0.1~5ton 정도가 된다. 이 때, 수지재생과정 시 치환 후 남은 이온(H+, Na+)들은 수세(水洗)과정에서 깨끗이 씻어내고, 수세 후의 물은 별도의 수처리 공정에서 정화한다.Resin regeneration is the hydrogen ion of hydrochloric acid (H+) And sodium ions of resin (Na+By ion substitution method between), the amount of hydrochloric acid is about 0.1 ~ 5ton. At this time, ions remaining after substitution during resin regeneration+, Na+The washes are washed off during washing, and the water after washing is purified in a separate water treatment process.
3. 수지탱크에서 재생한 수지에 규산소다를 통과시킨다.3. Pass the sodium silicate through the resin regenerated in the resin tank.
4. 통액탱크에서 비로소 콜로이달실리카 초기용액이 생성된다.4. The initial solution of colloidal silica is produced in the liquid tank.
이 때 통액을 위한 규산소다량은 0.1~6ton 정도로 한다.At this time, the amount of sodium silicate for passing liquid is about 0.1 ~ 6ton.
5. 반응조에서는 베이스(base)로서 수산화칼륨(KOH), 암모니아수(NH4OH), 수산화나트륨(NaOH)이 들어가고, 80~200℃의 온도에서 일정속도로 반응이 일어나게 한다.5. In the reactor, potassium hydroxide (KOH), ammonia water (NH 4 OH) and sodium hydroxide (NaOH) enter as a base, and the reaction occurs at a constant rate at a temperature of 80 to 200 ° C.
6. 반응 후 냉각조에서 실온까지 열을 식힌다.6. After the reaction, cool down to room temperature in a cooling bath.
7. 농축조에서 냉각한 콜로이달 실리카를 10~40%까지 농축시킨다.7. Concentrate the colloidal silica cooled in the concentration tank to 10-40%.
8. 농축한 콜로이달 실리카를 필터 1에서 1차적으로 필터링 한다.8. Filter the concentrated colloidal silica primarily on filter 1.
9. 균일하고 입자가 큰 슬러리를 구성될 때까지 5~8단계를 반복한다.9. Repeat steps 5 through 8 until a uniform, large particle slurry is formed.
10. 저장조에서 실온에서 저장한다.10. Store at room temperature in a reservoir.
11. 구멍크기에 따라 단계적으로 3~4번 정도 필터링을 하여 입자를 미세하고 균일하게 한다.11. Filter 3 ~ 4 times stepwise according to the hole size to make the particles fine and uniform.
12. 적정단위로 포장(packing)한다.12. Pack in appropriate units.
상기 제조공정에서 4, 5단계를 거침으로 통액탱크 내 콜로이달 실리카 초기용액을, 수산화칼륨(KOH), 암모니아수(NH4OH), 수산화나트륨(NaOH) 적정량을 베이스로 반응온도 80~200℃, 반응시간 0.5~6시간에서 반응시키는 과정에 의해 본 발명의 슬러리가 제조되고, 8, 10단계의 필터링 과정을 통하여 균일한 입도 분포도를 유지할 수 있게 된다.After the steps 4 and 5 in the manufacturing process, the initial temperature of the colloidal silica in the liquid tank, potassium hydroxide (KOH), ammonia water (NH 4 OH), sodium hydroxide (NaOH) based on the appropriate amount of reaction temperature 80 ~ 200 ℃, The slurry of the present invention is prepared by a reaction process at a reaction time of 0.5 to 6 hours, and uniform particle size distribution can be maintained through the filtering process of 8 and 10 steps.
도 4, 5를 참고로 하여 상기 본 발명의 콜로이달 실리카 슬러리 연마제 공정법에 의한 반도체 연마제의 특성을 살펴보면,Looking at the characteristics of the semiconductor abrasive by the colloidal silica slurry abrasive process method of the present invention with reference to Figure 4, 5,
(1) 현재 사용되는 반도체 연마제들의 연마율이 보통 2,000~2,500Å 정도인데 비해, 상기 5~8단계를 반복적으로 수행하여 본 발명은 적은 연마입자 함량(12%이하)의 슬러리로 구성되어 이러한 입자크기가 큰 슬러리로 인하여 3,000Å 이상의 높은 연마율을 나타낸다.(1) While the polishing rate of currently used semiconductor abrasives is about 2,000 ~ 2,500Å, the above steps 5 to 8 are repeatedly performed, and the present invention consists of a slurry having a low abrasive particle content (12% or less). Due to the large size of the slurry, the polishing rate is higher than 3,000 kPa.
(2) 120㎚ 이상의 입자크기를 제조하여도 아주 균일한 입도 분포도를 나타낸다. 기존의 콜로이달 실리카 제조 특성상 작은 입자 크기에서는 균일한 콜리이달 실리카의 제조가 가능하지만 120㎚ 이상의 입자크기에서는 주로 bi-model 형태의 분포도를 나타내었다.(2) Even when the particle size of 120 nm or more is produced, a very uniform particle size distribution is shown. Due to the existing colloidal silica manufacturing characteristics, uniform colloidal silica can be produced at small particle sizes, but bi-model distribution is mainly shown at particle sizes of 120 nm or more.
(3) 일반적으로 연마입자가 커지면 안정성이 떨어지지만 본 발명은 1년 이상이 경과하여도 응집되어 침전되는 현상이 일어나지 않는 장기간 안정성을 보여준다.(3) Generally, as the abrasive grains become larger, the stability is lowered. However, the present invention shows long-term stability without the phenomenon of aggregation and precipitation even after more than 1 year.
(4) 퓸드 실리카의 경우는 고분자 물질, 계면활성제, 아민(amin)계의 물질 등 환경유해물질들이 다량 포함되어 있지만 본 발명의 콜로이달 실리카에는 상기 화학물질들이 거의 포함되어 있지 않아 안전하다.(4) In the case of fumed silica, a large amount of environmentally harmful substances such as a polymer material, a surfactant, and an amine (amin) -based material are contained, but the colloidal silica of the present invention is safe because almost no chemicals are included.
본 발명 반도체용 콜로이달 실리카 슬러리 연마제 및 그 제조방법를 통하여,Through the colloidal silica slurry abrasive for a semiconductor of the present invention and a method of manufacturing the same,
120㎚이상의 큰 입자 크기를 제조하여도 입도분포가 균일하고, 입자크기가 커 연마율이 매우 증대되고, 장기간 안정적으로 사용가능하면서, 유해한 화학물질을 거의 포함하고 있지 않아서 친환경적인 반도체 웨이퍼 제조에 있어서 없어서는 안 될 반도체용 연마제로서 CMP의 효율을 증대시킬 수 있는 그 효과가 다대한 발명이라 하겠다Even if a large particle size of 120 nm or more is produced, the particle size distribution is uniform, the particle size is large, the polishing rate is greatly increased, it can be used stably for a long time, and it contains little harmful chemicals, thereby producing environmentally friendly semiconductor wafers. As an indispensable abrasive for semiconductors, the effect that can increase the efficiency of CMP is a great invention.
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