KR20040059798A - Method for etching using plasma - Google Patents
Method for etching using plasma Download PDFInfo
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- KR20040059798A KR20040059798A KR1020020086301A KR20020086301A KR20040059798A KR 20040059798 A KR20040059798 A KR 20040059798A KR 1020020086301 A KR1020020086301 A KR 1020020086301A KR 20020086301 A KR20020086301 A KR 20020086301A KR 20040059798 A KR20040059798 A KR 20040059798A
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- Prior art keywords
- etching
- polymer
- plasma
- plasma etching
- transition process
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000005530 etching Methods 0.000 title claims abstract description 32
- 229920000642 polymer Polymers 0.000 claims abstract description 35
- 230000007704 transition Effects 0.000 claims abstract description 16
- 238000001020 plasma etching Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
본 발명은 플라즈마 식각 방법에 관한 것으로, 보다 구체적으로는, 플라즈마 식각 공정중 폴리머의 발생을 방지하는 방법에 관한 것이다.The present invention relates to a plasma etching method, and more particularly, to a method for preventing the generation of polymer during the plasma etching process.
반도체 제조 공정에서 사용하는 대부분의 건식 식각 장비는 플라즈마 식각 장비가 주로 이용되고 있으며, 현재, 반도체 소자의 집적도가 증가함에 따라, 보다 미세한 사이즈의 패턴을 형성하기 위하여, 플라즈마 식각 폴리머를 이용한 식각이 많이 이용되고 있다. 여기서, 플라즈마 식각 폴리머는 플라즈마 식각 공정중 발생되는 식각 부산물로서, 이러한 폴리머에 의하여 원하는 형태의 미세 패턴을 형성할 수 있다.Most of the dry etching equipment used in the semiconductor manufacturing process is mainly used plasma etching equipment, and as the degree of integration of semiconductor devices increases, in order to form a pattern of finer size, many etching using the plasma etching polymer It is used. Here, the plasma etching polymer is an etching by-product generated during the plasma etching process, and may form a fine pattern having a desired shape by the polymer.
종래에는 플라즈마 장비의 특성 및 한계 때문에, 플라즈마를 발생(점화)시키기 전에, 다음에 진행될 스텝(예를 들어 식각 스텝)과 동일한 조건의 스텝을 삽입하여, 다음의 스텝으로의 진행을 부드럽고 연속적으로 진행하고자 한다.Conventionally, due to the characteristics and limitations of the plasma equipment, before generating (igniting) the plasma, a step having the same conditions as the next step (for example, an etching step) to be inserted is inserted to smoothly and continuously proceed to the next step. I would like to.
그러나, 플라즈마 점화전, 식각 스텝과 동일한 스텝이 플라즈마 장비내에 구현됨으로 인하여, 플라즈마 점화와 동시에 과도한 량의 폴리머가 웨이퍼 상에 발생된다. 이로 인하여, 과량의 폴리머에 의하여 식각이 저지되는 현상이 발생되었다.However, before the plasma ignition, the same steps as the etching step are implemented in the plasma equipment, so that an excessive amount of polymer is generated on the wafer simultaneously with the plasma ignition. For this reason, the phenomenon that the etching is prevented by the excess polymer occurred.
도 1은 사이즈가 상대적으로 큰 에치 모니터링 박스(etch monitoring box)에서 과도한 폴리머에 의하여 식각이 저지된 상태를 보여주는 사진이다. 이와같이 폴리머에 의하여 식각이 저지되면, 식각이 정상적으로 진행되었는지를 확인하는 에치 모니터링 박스를 모니터링할 수 없으므로, 안정한 공정을 진행할 수 없고, 이러한 폴리머 식각을 양산에 적용하기 어렵다.FIG. 1 is a photograph showing an etching stopped by excessive polymer in an etch monitoring box having a relatively large size. When the etching is prevented by the polymer as described above, the etch monitoring box for confirming whether the etching is normally performed cannot be monitored, so that a stable process cannot be performed, and such polymer etching is difficult to apply to mass production.
따라서, 본 발명의 목적은, 플라즈마 식각 공정중 과도하게 발생되는 폴리머를 방지할 수 있는 플라즈마 식각 방법을 제공하는 것이다.Accordingly, an object of the present invention is to provide a plasma etching method that can prevent polymers that are excessively generated during the plasma etching process.
도 1은 과도한 폴리머에 의하여 식각이 저지된 상태를 보여주는 사진.1 is a photograph showing a state in which etching is stopped by excessive polymer.
도 2는 본 발명에 따른 전이 공정을 삽입하였을 때에 식각 저지 없이 정상적으로 식각이 이루어진 상태를 보여주는 사진.Figure 2 is a photograph showing a state in which the normal etching is performed without etching when the transition process according to the present invention.
상기한 본 발명의 목적을 달성하기 위하여, 본 발명은,플라즈마 식각 챔버를 구동시키는 단계; 상기 플라즈마 식각 챔버에 폴리머를 제거하기 위한 전이 공정을 실시하는 단계; 상기 플라즈마 식각 챔버내에 폴리머 제공 가스를 공급하여, 폴리머를 이용한 식각을 진행하는 단계를 포함하며, 상기 전이 공정은 상기 폴리머 제공 가스의 양을 감소시킨 상태에서 상기 식각 공정과 동일한 식각 분위기로 진행하는 것을 특징으로 한다. 여기서, 상기 전이 공정은 플라즈마가 지속적으로 인가된 상태에서 진행되는 것을 특징으로 한다.In order to achieve the above object of the present invention, the present invention, comprising: driving a plasma etching chamber; Performing a transition process to remove polymer in said plasma etching chamber; Supplying a polymer providing gas into the plasma etching chamber, and performing etching using a polymer, wherein the transition process is performed in the same etching atmosphere as that of the etching process while the amount of the polymer providing gas is reduced. It features. Here, the transition process is characterized in that the progress in the state that the plasma is continuously applied.
이하 첨부한 도면에 의거하여 본 발명의 바람직한 실시예를 설명한다.Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
첨부된 도면 도 2는 본 발명에 따른 전이 공정을 삽입하였을 때에 식각 저지 없이 정상적으로 식각이 이루어진 상태를 보여주는 사진이다.2 is a photograph showing a state in which etching is normally performed without etch stop when the transition process according to the present invention is inserted.
먼저, 폴리머가 가장 많이 발생되는 시점을 조사하기 위하여, 예를 들어 실리콘 산화막 식각제인 C4F6를 메인 식각제로 사용하는 플라즈마 식각 공정을 실험적으로 진행하였다. 그 결과, 플라즈마가 점화된 후부터 안정화되지 직전까지 웨이퍼 표면에 다량의 폴리머가 발생되는 것을 알 수 있었다. 즉, 반응기내에 원하는 가스 플로우(gas flow), 압력, 캐소드(cathod) 온도, 등의 공정 조건이 결정되고, 파워를 인가한 후, 플라즈마가 점화되고 안정화될 때까지의 수백 ㎲ 동안 다량의 폴리머가 발생되는 것이다. 이는 이 기간중 지속적으로 폴리머 발생 가스가 공급되기 때문이다.First, in order to investigate the time when the polymer is most generated, a plasma etching process using, for example, C 4 F 6, which is a silicon oxide film etchant, as the main etchant was experimentally performed. As a result, it was found that a large amount of polymer is generated on the wafer surface from the plasma is ignited until just before the stabilization. That is, the process conditions such as the desired gas flow, pressure, cathode temperature, etc. within the reactor are determined, and after applying the power, a large amount of polymer is added for several hundred milliseconds until the plasma is ignited and stabilized. It happens. This is because the polymer generating gas is continuously supplied during this period.
한편, 이 짧은 순간 동안의 파워 커플링되는 과정 및 플라즈마내의 주된 인자인 전자 온도(electron temperature) 및 전자 밀도(electron density)의 거동을 보면 다음과 같다. 파워 시스템의 특성 및 한계 때문에 파워는 한순간에 인가되지 않고 약 2-3초 정도의 시간의 경과된 후에 파워가 인가되고, 커플링 즉, 전계의 에너지를 씨드 전자(seed electron)가 흡수해서 안정된 플라즈마를 이룩하는데 까지도 역시 일정한 시간이 필요하다. 이 짧은 기간을 전이 기간이라 한다.On the other hand, the process of power coupling during this short instant and the behavior of electron temperature and electron density, which are the main factors in the plasma, are as follows. Due to the characteristics and limitations of the power system, power is not applied in a moment, but after about 2-3 seconds, power is applied and the plasma is stabilized by absorbing the energy of the coupling, that is, the seed electrons. It also takes a certain time to achieve. This short period is called the transition period.
본 실시예에서는 이 전이 기간 동안, 식각 공정과 동일한 분위기를 조성하되, 폴리머 발생 가스의 양을 식각 공정일때보다 적게 예를 들어 0 내지 50% 정도 공급한다. 여기서, 전이 기간 중 플라즈마는 지속적으로 인가함이 바람직하고, 그밖의 조건들 예를 들어, 압력, 파워, 챔버 벽 온도 및 캐소드의 온도는 식각 공정일때와 동일하게 유지한다.In this embodiment, during this transition period, the same atmosphere as in the etching process is formed, but the amount of the polymer generating gas is supplied, for example, about 0 to 50% less than in the etching process. Here, the plasma is preferably applied continuously during the transition period, and other conditions such as pressure, power, chamber wall temperature, and cathode temperature are kept the same as in the etching process.
이와같이, 플라즈마 챔버가 동작하여 플라즈마가 점화된다음 안정화되기직전까지, 폴리머 발생 가스의 공급을 감소시킨채로, 식각 공정 분위기를 유지하므로써, 공정을 부드럽게 진행할 수 있고, 초기 과도한 양의 식각 폴리머 발생을 방지할 수 있다.In this way, the plasma chamber is operated to maintain the etching process atmosphere while reducing the supply of the polymer generating gas until the plasma is ignited and stabilized, so that the process can proceed smoothly, and the initial excessive amount of etching polymer is prevented. can do.
도 2는 본 발명에 따라, 전이 공정을 실시하였을때, 식각 저지 없이 정상적으로 식각이 진행된 상태를 나타낸다.2 illustrates a state in which etching is normally performed without etch stop when the transition process is performed.
이상에서 자세히 설명한 바와 같이, 본 실시예에 의하면, 폴리머를 이용하는 식각 공정중, 식각 공정과는 동일한 분위기를 취하되, 폴리머 발생 가스의 공급을 감소시키는 전이 공정을 삽입하므로써, 식각 저지없이 식각을 진행할 수 있다.As described in detail above, according to the present embodiment, during the etching process using the polymer, the etching process can be performed without stopping the etching by inserting a transition process that takes the same atmosphere as the etching process and reduces the supply of the polymer generating gas. Can be.
이에따라, 패턴 불량을 방지할 수 있고, 안정된 공정을 진행할 수 있다.Thereby, pattern defect can be prevented and a stable process can be advanced.
이상 본 발명을 바람직한 실시예를 들어 상세하게 설명하였으나, 본 발명은 상기 실시예에 한정되지 않고, 본 발명의 기술적 사상의 범위 내에서 당 분야에서 통상의 지식을 가진 자에 의하여 여러가지 변형이 가능하다.Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the scope of the technical idea of the present invention. .
전술한 본 발명은 플라즈마 식각 공정중 과도하게 발생되는 폴리머를 방지할 수 있으며, 이로 인하여 반도체 소자의 신뢰도 및 수율을 개선할 수 있는 효과가 있다.The present invention described above can prevent the polymer that is excessively generated during the plasma etching process, thereby improving the reliability and yield of the semiconductor device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020020086301A KR20040059798A (en) | 2002-12-30 | 2002-12-30 | Method for etching using plasma |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020020086301A KR20040059798A (en) | 2002-12-30 | 2002-12-30 | Method for etching using plasma |
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| KR20040059798A true KR20040059798A (en) | 2004-07-06 |
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- 2002-12-30 KR KR1020020086301A patent/KR20040059798A/en not_active Application Discontinuation
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