KR20040022729A - Seramic Clamp And Etching System Having The Same - Google Patents

Seramic Clamp And Etching System Having The Same Download PDF

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Publication number
KR20040022729A
KR20040022729A KR1020020053475A KR20020053475A KR20040022729A KR 20040022729 A KR20040022729 A KR 20040022729A KR 1020020053475 A KR1020020053475 A KR 1020020053475A KR 20020053475 A KR20020053475 A KR 20020053475A KR 20040022729 A KR20040022729 A KR 20040022729A
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KR
South Korea
Prior art keywords
wafer
clamp
ceramic clamp
etching system
ceramic
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Application number
KR1020020053475A
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Korean (ko)
Inventor
강남석
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삼성전자주식회사
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Priority to KR1020020053475A priority Critical patent/KR20040022729A/en
Publication of KR20040022729A publication Critical patent/KR20040022729A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

PURPOSE: A ceramic clamp is provided to improve yield of a wafer by maintaining the same etch process on the wafer even if a conventional focusing part is eliminated and by basically preventing byproducts from being dropped to the surface of the wafer. CONSTITUTION: A wafer exposure hole(108) for exposing the wafer(203) is formed in the center of a circular disc(105). A ring(104) is formed on the upper surface of the circular disc, surrounding the wafer exposure hole. The ceramic clamp is composed of the circular disc and the ring. An etching system is mounted with the ceramic clamp.

Description

세라믹 클램프 및 이를 장착한 에칭 시스템{Seramic Clamp And Etching System Having The Same}Ceramic Clamp And Etching System Having The Same}

본 발명은 세라믹 클램프와 에칭 시스템에 관한 것으로 보다 상세하게 설명하면 각종 가스와 RF 파워(Radio Frequency Power)를 이용하여 메탈 막질을 에칭(Etching)하는 설비의, 웨이퍼(Wafer)를 고정시키기 위한 세라믹 클램프와 이를 장착한 에칭 시스템에 관한 것이다.The present invention relates to a ceramic clamp and an etching system. More specifically, the present invention relates to a ceramic clamp for fixing a wafer in a facility for etching a metal film using various gases and RF power. And an etching system equipped with the same.

에칭 공정은 고온에서 진행되는데, 웨이퍼가 고온에서 장시간 노출되는 경우 에 불량이 발생할 수 있으므로 웨이퍼의 온도를 저하시키기 위해 헬륨 가스(He)를 사용하여 웨이퍼의 온도를 강하시킨다. 이때 헬륨의 압력으로 부터 웨이퍼가 유동하는 것을 방지하기 위해 정전척 위의 웨이퍼는 세라믹 클램프에 의해 고정된다.The etching process is performed at a high temperature. Since a defect may occur when the wafer is exposed at a high temperature for a long time, helium gas (He) is used to lower the temperature of the wafer to lower the temperature of the wafer. At this time, the wafer on the electrostatic chuck is fixed by the ceramic clamp to prevent the wafer from flowing from the pressure of helium.

도 1a는 종래 세라믹 클램프(304)의 사시도이고, 도 1b는 종래 세라믹 클램프(204)의 단면도이다. 종래 세라믹 클램프(304)는 포커싱 부(101), 링(104), 디스크(105)로 구성되어 있다. 설명의 편의상 각 부위를 분리하여 명명하였으나 각각은 별개의 것이 아니고 일체임을 밝혀둔다.1A is a perspective view of a conventional ceramic clamp 304, and FIG. 1B is a cross sectional view of a conventional ceramic clamp 204. As shown in FIG. The conventional ceramic clamp 304 is composed of a focusing portion 101, a ring 104, a disk 105. For convenience of explanation, each part is named separately but it is clear that each is not a separate one.

포커싱 부(101)는 플라즈마 발생시 플라즈마를 웨이퍼(203)에 포커싱 한다. 포커싱 부(101) 내부는 도 1b에서와 같이 나사선(107)이 형성되어 있다. 에칭 공정후에는 에칭에 사용된 가스와 에칭된 막과의 화학반응에서 많은 부산물이 발생하고, 이는 주로 포커싱 부(101)에 침적된다. 나사선(107)은 이러한 부산물과의 접착력을 향상시키고 부산물과의 접착 면적을 증가시키기 위함이다.The focusing unit 101 focuses the plasma on the wafer 203 when plasma is generated. Inside the focusing unit 101, a thread 107 is formed as shown in FIG. 1B. After the etching process, many by-products occur in the chemical reaction between the gas used for etching and the etched film, which is mainly deposited in the focusing portion 101. The thread 107 is to improve the adhesion with such by-products and to increase the adhesion area with the by-products.

그러나 이러한 나사선(107)의 존재에도 불구하고, 이러한 부산물은 포커싱 부(101)와의 밀착력 저하와 공정시의 진동에 의해 웨이퍼(203) 표면에 떨어지게 되고, 떨어진 부산물은 웨이퍼(203)의 수율을 저하시키는 문제가 있었다.However, despite the presence of the thread 107, such by-products fall on the surface of the wafer 203 due to a decrease in adhesion with the focusing unit 101 and vibration during the process, and the fallen by-products lower the yield of the wafer 203. There was a problem to let.

따라서 본 발명은 웨이퍼 표면에 부산물이 떨어지지 않도록 하여 웨이퍼의 수율을 증대시킴을 목적으로 한다.Therefore, an object of the present invention is to increase the yield of the wafer by preventing the by-products fall on the wafer surface.

도 1a는 종래 세라믹 클램프의 사시도이고,1A is a perspective view of a conventional ceramic clamp,

도 1b는 종래 세라믹 클램프의 단면도이고,Figure 1b is a cross-sectional view of a conventional ceramic clamp,

도 2는 본 발명에 의한 세라믹 클램프가 장착된 플라즈마 처리 장치의 개략도이고,2 is a schematic diagram of a plasma processing apparatus equipped with a ceramic clamp according to the present invention;

도 3a는 본 발명에 의한 세라믹 클램프의 사시도이고,3A is a perspective view of a ceramic clamp according to the present invention,

도 3b는 본 발명에 의한 세라믹 클램프의 단면도이다.3b is a cross-sectional view of the ceramic clamp according to the present invention.

※ 도면의 주요 부분에 대한 간단한 설명 ※※ Brief description of the main parts of the drawing ※

101: 포커싱 부 102: 홈101: focusing part 102: home

103: 볼트 104: 링103: bolt 104: ring

105: 디스크(105) 106: 웨이퍼 고정 홈105: disk 105 106: wafer holding groove

107: 나사선 108: 웨이퍼 노출 홀107: thread 108: wafer exposure hole

201: 샤워 헤드 202: 헬륨 탱크201: shower head 202: helium tank

203: 웨이퍼 204, 304: 세라믹 클램프203: wafer 204, 304: ceramic clamp

205: 유전체 206: 전극205: dielectric 206: electrode

207: 포트 208, 209: 동축 케이블207: port 208, 209: coaxial cable

210: 임피던스 매칭부 211: RF 발생부210: impedance matching unit 211: RF generator

이러한 목적을 달성하기 위하여 본 발명에 의한 세라믹 클램프는 중심에 웨이퍼를 노출시키기 위한 웨이퍼 노출 홀을 구비하고, 하면에 웨이퍼 고정 홈을 구비한 웨이퍼 원판형 디스크와; 웨이퍼 노출 홀을 감싸며 원판형 디스크의 상면에 위치하는 링으로 구성된다.In order to achieve the above object, the ceramic clamp according to the present invention includes a wafer disc-shaped disc having a wafer exposing hole for exposing a wafer at its center and a wafer fixing groove at a lower surface thereof; It consists of a ring that surrounds the wafer exposure hole and is located on the top of the disc.

또한 본 발명에 의한 에칭 시스템은 위의 세라믹 클램프를 포함한다.The etching system according to the present invention also includes the ceramic clamp above.

이하, 도면을 중심으로 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the drawings.

도 2는 본 발명에 의한 세라믹 클램프(204)가 장착된 플라즈마 처리 장치의 개략도이다. 플라즈마 처리 장치는 통상적으로 에칭이나, 산화 또는 화학적 증착(CVD) 등에 사용된다. 쳄버(212) 내부의 상단에 위치한 샤워 헤드(201)에서 플라즈마의 소스가 되는 가스를 방출한다. 정전척(ESC, 213)위에는 웨이퍼(203)가 위치한다. 웨이퍼(203)의 온도를 제어하기 위해서 헬륨 탱크(202)는 포트(207)를 통해 헬륨가스를 방출하여 웨이퍼(203)의 온도를 제어한다. 이때 헬륨의 압력으로 부터 웨이퍼(203)가 유동하는 것을 방지하기 위해 정전척(213) 위의 웨이퍼(203)는 세라믹 클램프(204)에 의해 고정된다.2 is a schematic diagram of a plasma processing apparatus equipped with a ceramic clamp 204 according to the present invention. Plasma processing apparatuses are typically used for etching, oxidation or chemical vapor deposition (CVD) and the like. The shower head 201 located at the top inside the chamber 212 emits a gas that is a source of plasma. The wafer 203 is positioned on the electrostatic chuck ESC 213. In order to control the temperature of the wafer 203, the helium tank 202 releases helium gas through the port 207 to control the temperature of the wafer 203. At this time, the wafer 203 on the electrostatic chuck 213 is fixed by the ceramic clamp 204 to prevent the wafer 203 from flowing from the pressure of helium.

RF 발생부(211)에서 발생한 RF 파워는 동축 케이블(209)를 통해 임피던스 매칭부(Impedance matching part, 210)로 전달되고, 임피던스 매칭부(210)는 다시 RF 파워를 동축 케이블(208)을 통해 정전척(213)의 전극(206)으로 전달한다. RF 파워는 전극(206)에 전류를 통하게하여, 플라즈마 이온이 웨이퍼(203)를 향하도록 유인한다.The RF power generated by the RF generator 211 is transmitted to the impedance matching part 210 through the coaxial cable 209, and the impedance matching part 210 again transmits the RF power through the coaxial cable 208. Transfer to electrode 206 of electrostatic chuck 213. RF power causes a current through electrode 206 to attract plasma ions toward the wafer 203.

RF 리턴 전류는 챔버(212)의 벽(214)을 통해서 동축 케이블(208)의 외부 도체에 전달되어 임피던스 매칭부(210)으로 향한다. 임피던스 매칭부(210)는 내부의 임피던스 매칭 회로의 가변 임피던스 소자를 조절하여 챔버(212)로 부터의 RF 파워 반사를 최소화 시킨다.The RF return current is delivered through the wall 214 of the chamber 212 to the outer conductor of the coaxial cable 208 and directed to the impedance matching portion 210. The impedance matching unit 210 adjusts the variable impedance element of the internal impedance matching circuit to minimize the RF power reflection from the chamber 212.

도 3a는 본 발명에 의한 세라믹 클램프(204)의 사시도이고, 도 3b는 본 발명에 의한 세라믹 클램프(204)의 단면도이다.3A is a perspective view of a ceramic clamp 204 according to the present invention, and FIG. 3B is a cross-sectional view of the ceramic clamp 204 according to the present invention.

디스크(104)는 중심에 웨이퍼를 노출시키기 위한 웨이퍼 노출 홀(108)이 구비되고, 하부에 웨이퍼 고정 홈(106)이 구비되어 있으며, 이 웨이퍼 고정 홈(106)은 웨이퍼(203)가 직접 밀착하여 웨이퍼(203)를 고정한다. 디스크(104)에는 홈(102)가 구비되어, 볼트(103)에 의해 리프트 실린더(도시안됨)에 고정된다.The disk 104 has a wafer exposure hole 108 for exposing a wafer at the center thereof, and a wafer fixing groove 106 at the bottom thereof, and the wafer fixing groove 106 is in close contact with the wafer 203. To fix the wafer 203. The disk 104 is provided with a groove 102 and fixed to the lift cylinder (not shown) by the bolt 103.

그런데 메탈 에칭시에는 금속 재질의 볼트(103) 또한 에칭되므로 이를 방지하기 위해서 디스크(105) 상부면은 다시 세라믹 재질의 클램프 커버링(도시안됨)이 덮는다. 링(104)은 클램프 커버링(도시안됨)의 두께를 고려하여 클램프 커버링의 두께로 제작되며, 링의 외측면은 클램프 커버링(도시안됨)의 내측면과 접한다.However, since the metal bolt 103 is also etched during the metal etching, the upper surface of the disk 105 is covered with a ceramic clamp covering (not shown). The ring 104 is made with the thickness of the clamp covering taking into account the thickness of the clamp covering (not shown), and the outer surface of the ring contacts the inner surface of the clamp covering (not shown).

따라서, 링(104)은 클램프 커버링(도시안됨)이 덮힌 경우 상부면을 평평하게 한다.Thus, the ring 104 flattens the top surface when the clamp covering (not shown) is covered.

한편, 본 명세서와 도면에 개시된 발명의 실시예들은 이해를 돕기 위해 특정 예를 예시한 것에 지나지 않으며, 본 발명의 범위를 한정하고자 하는 것이 아니다. 여기에 개시된 실시예들 이외에도 본 발명의 기술적 사상에 바탕을 둔 다른 변화예들이 실시 가능하다는 것은, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 자명한 것이다.On the other hand, embodiments of the invention disclosed in the specification and drawings are merely illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the invention. It is apparent to those skilled in the art that other variations based on the technical idea of the present invention can be carried out in addition to the embodiments disclosed herein.

본 발명은 종래의 포커싱부를 제거하였으나 웨이퍼의 에칭에는 차이가 없으며, 오히려 웨이퍼 표면에 부산물이 떨어지는 것을 근본적으로 방지하여 웨이퍼의 수율을 증대시키는 효과가 있다.Although the present invention removes the focusing part of the related art, there is no difference in etching of the wafer, but rather, it prevents by-products from falling on the wafer surface, thereby increasing the yield of the wafer.

Claims (2)

중심에 웨이퍼를 노출시키기 위한 웨이퍼 노출 홀을 구비하고, 하면에 웨이퍼 고정 홈을 구비한 웨이퍼 원판형 디스크;A wafer disk having a wafer exposure hole for exposing a wafer at its center and a wafer fixing groove at a bottom thereof; 상기 웨이퍼 노출 홀을 감싸며 원판형 디스크의 상면에 위치하는 링;A ring surrounding the wafer exposure hole and positioned on an upper surface of the disc; 으로 구성된 세라믹 클램프.Ceramic clamp consisting of. 제 1항의 세라믹 클램프를 장착한 에칭 시스템.An etching system equipped with the ceramic clamp of claim 1.
KR1020020053475A 2002-09-05 2002-09-05 Seramic Clamp And Etching System Having The Same KR20040022729A (en)

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