KR20040011632A - UV-detecting element - Google Patents
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 15
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- WCJLCOAEJIHPCW-UHFFFAOYSA-N octyl 2-hydroxybenzoate Chemical compound CCCCCCCCOC(=O)C1=CC=CC=C1O WCJLCOAEJIHPCW-UHFFFAOYSA-N 0.000 claims description 4
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- FMRHJJZUHUTGKE-UHFFFAOYSA-N Ethylhexyl salicylate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1O FMRHJJZUHUTGKE-UHFFFAOYSA-N 0.000 abstract 1
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- XUMBMVFBXHLACL-UHFFFAOYSA-N Melanin Chemical compound O=C1C(=O)C(C2=CNC3=C(C(C(=O)C4=C32)=O)C)=C2C4=CNC2=C1C XUMBMVFBXHLACL-UHFFFAOYSA-N 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J2003/003—Comparing spectra of two light sources
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J2003/283—Investigating the spectrum computer-interfaced
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Abstract
Description
본 발명은 자외광 검출소자에 관한 것으로서, 더욱 상세하게는 광원으로부터 조사되는 자외광 중 인체에 대한 악영향의 효과가 다른 자외광 A와 자외광 B의 광량을 각각 동시에 검출하는 소자의 발명에 관한 것이다.The present invention relates to an ultraviolet light detecting element, and more particularly, to an invention of an element for simultaneously detecting the amounts of ultraviolet light A and ultraviolet light B, each of which has an adverse effect on the human body of ultraviolet light emitted from a light source. .
태양은 자외광, 가시광, 적외광 등 여러 가지 전자파를 방사하고 있으며, 그 중 자외광은 파장에 따라 일반적으로 UV-C(200~280㎚)(이하, "자외광 C"), UV-B(280~320㎚)(이하, "자외광 B"), UV-A(320~400㎚)(이하, "자외광 A")의 3종류로 분류가 되며, 파장이 293㎚ 이하의 자외광은 대기권을 둘러싼 성층권의 오존층과 기타의 것에 의해 흡수되어 지표면에는 도달되지 않는다.The sun emits a variety of electromagnetic waves such as ultraviolet light, visible light and infrared light. Among them, ultraviolet light is generally UV-C (200-280 nm) (hereinafter referred to as "ultraviolet light C") and UV-B depending on the wavelength. (280 to 320 nm) (hereinafter referred to as "ultraviolet light B") and UV-A (320 to 400 nm) (hereinafter referred to as "ultraviolet light A"). Is absorbed by the stratospheric ozone layer and others surrounding the atmosphere and does not reach the earth's surface.
그러나 파장 293㎚ 이상의 자외광은 피부의 색소침착(sun tan), 홍반(sun burn), 피부의 탄력저하, 각질화와 같은 피부노화를 비롯하여 심하면 피부암, 백내장 등 여러 악영향을 미치는 것으로 알려져 있다 (Thomas B. Fitzpatrick et al. : Acute and Chronic Effects of the Sun, Phtomedicine). 최근에는 오존층 감퇴와 관련되어 지표에 도달하는 태양 자외광의 증가가 이미 중요한 환경적인 이슈로 되어 있다.However, ultraviolet light with a wavelength of 293 nm or more is known to have various adverse effects such as skin aging such as sun tan, sun burn, skin elasticity, and keratinization, as well as skin cancer and cataract (Thomas B). Fitzpatrick et al .: Acute and Chronic Effects of the Sun, Phtomedicine). In recent years, the increase in solar ultraviolet light reaching the surface has been an important environmental issue related to the depletion of the ozone layer.
자외광 B는 대부분 피부의 표피에 작용하여 과다 노출시 피부에 홍반 현상을 일으키는데, 이는 혈관이 확장하고 혈류가 증가하여 피부가 빨갛게 변하는 현상이다. 일반적으로 선번(sun burn)이라 불려지기도 하며, 그 정도가 심할 경우 수포가 형성되고 통증이나 부종이 동반된다. 또, 눈에 손상을 주어 백내장을 일으키기도 한다. 자외광 B는 피부암의 주요한 발생요인으로, 미국에서만 연간 100만명 이상의 피부암 환자가 발생하고 있다. 최근에는 우리나라도 야외에서 자외광을 쬐는 선진국형 레저생활이 보편화되고 공해 등의 환경오염에 따른 오존층의 파괴, 노인층의 인구가 많아지는 것이 원인이 되어 피부암 환자가 증가하는 추세이다.Ultraviolet light B mostly acts on the skin's epidermis and causes erythema on the skin during overexposure, which causes the blood vessels to expand and blood flow to increase redness. It is usually called a sun burn, and when it is severe, blisters are formed and pain or edema is accompanied. It can also damage your eyes and cause cataracts. Ultraviolet light B is a major cause of skin cancer, with more than 1 million skin cancer patients annually in the United States alone. Recently, in Korea, the developed country leisure life is exposed to ultraviolet light outdoors, skin cancer patients are on the rise due to the destruction of the ozone layer due to environmental pollution such as pollution and the increase of the elderly population.
자외광 A는 피부의 진피층까지 투과되어 피부색을 검게 변화시키는데, 이는자외광 A에 의해 피부표피의 기저층에 있는 멜라노사이드가 자극되어 멜라닌이란 색소가 증가하는 경우로서, 일반적으로 색소 침착 또는 선탠(sun tan)현상이라 불린다. 또한, 자외광 A는 그 자각증상이 크지 않고 일반유리도 투과하기 때문에 피부가 자외광 A에 만성적으로 노출되기 쉽고 멜라닌 색소의 증가는 기미와 주근깨, 검버섯 등을 생성시키며 피부의 노화를 촉진시킨다. 최근 보고에 따르면 자외광 A 또한 장시간 노출될 경우 치명적인 피부암을 일으킬 수 있다고 알려져 있다.Ultraviolet light A penetrates the dermal layer of the skin and changes the skin color. This is when ultraviolet light A stimulates melanocytes in the basal layer of the skin epidermis and increases the pigment of melanin. Generally, pigmentation or sun tanning (sun) tan) phenomenon. In addition, since the ultraviolet light A is not large in the subjective symptoms and penetrates the general glass, the skin is prone to chronic exposure to the ultraviolet light A, and the increase of the melanin pigment produces spots, freckles, blotch, etc. and promotes aging of the skin. According to recent reports, ultraviolet light A can also cause fatal skin cancer after prolonged exposure.
이러한 태양광 중의 유해 자외광에 대한 과다노출로부터 예상되는 인체에 대한 위험정도에 대한 정보를 제공하기 위하여 국내에서도 1998년부터 기상청에서 자외선 지수를 예보하고 있으나 산과 바다, 스키장 등의 유해 자외광에 노출되는 특정의 실제 상황에서 참고 할 만한 유용한 정보가 되지 못하는 실정이다. Fitzpatrick은 자외광에 대한 피부의 반응정도에 따라 사람의 광피부형을 표 1과 같이 6가지로 분류했는데, 인종, 개인에 따라 자외광에 대한 피부의 민감도가 매우 다름을 알 수 있고, 백인이 자외광에 가장 약하며(Thomas B. Fitzpatrick et al. : Preventive treatment of sunburn, dermatoheliosis and skin cancer with sunprotective agents, Dermatology in general medicine, 3rd ed., 1987, 1507∼1522쪽), 국내에도 서양의 백인피부에 해당하는 사람이 9.1%나 차지하는 것으로 보고되고 있다 (윤재일 외 : 대한피부과학회지 34(6), 1996, 893∼897쪽). 따라서 특정지역이나 개인의 피부타입에 따라 자외광 노출정도를 알려줄 수 있는 휴대용 자외광 측정기의 필요성이 대두되고 있다. 종래 휴대용 자외광 측정기의 센서소자로써 Si(Eg :1.12eV), GaAs(Eg:1.43eV), GaP(Eg:2.26eV) 등이 사용되고 있으나그 밴드갭 에너지에 따른 감도의 한계파장은 Si이 1107 nm, GaAs가 867 nm, GaP가 548 nm로 모두 UV-A와 UV-B를 구분할 수 없다. 따라서 제조 공정이 복잡함과 동시에 고가인 자외광 간섭필터를 사용해야만 하는 실정이다.In Korea, the Korea Meteorological Administration has been predicting the UV index since 1998 to provide information on the degree of risk to humans from overexposure to harmful ultraviolet light in sunlight. However, exposure to harmful ultraviolet light such as mountains, sea and ski resorts has been reported. This is not a useful information to refer to in certain actual situations. Fitzpatrick classified human skin types into six categories according to the degree of skin's response to ultraviolet light, as shown in Table 1. The sensitivity of the skin to ultraviolet light varies depending on race and individual. Weakest in ultraviolet light (Thomas B. Fitzpatrick et al .: Preventive treatment of sunburn, dermatoheliosis and skin cancer with sunprotective agents, Dermatology in general medicine, 3rd ed., 1987, 1507-1522) It is reported that 9.1% of the respondents accounted for (Yang, Jae-il et al., Korean Journal of Dermatology 34 (6), 1996, pp. 893-889). Therefore, the need for a portable ultraviolet light meter that can inform the exposure of ultraviolet light according to the skin type of a particular area or individual is emerging. Conventionally, Si (Eg: 1.12eV), GaAs (Eg: 1.43eV), GaP (Eg: 2.26eV), etc. are used as sensor elements of the portable ultraviolet light meter, but the limit wavelength of sensitivity according to the bandgap energy is 1107. nm, GaAs is 867 nm, GaP is 548 nm, all can not distinguish between UV-A and UV-B. Therefore, the manufacturing process is complicated and at the same time expensive ultraviolet light interference filter must be used.
본 발명에서는 종래의 고가인 자외광 간섭필터를 사용하지 않고 자외광 A와 자외광 B의 동시 검출이 가능한 값싼 자외광 검출소자를 제공한다.The present invention provides an inexpensive ultraviolet light detecting element capable of simultaneously detecting the ultraviolet light A and the ultraviolet light B without using a conventionally expensive ultraviolet light interference filter.
* MED(Minimal Erythemal Dose, 최소홍반량)* MED (Minimal Erythemal Dose)
본 발명은 상기한 종래 기술의 단점을 극복하기 위해 마련된 것으로서, 종래의 고가인 자외광 간섭필터를 사용하지 않고, 자외광 A와 자외광 B를 동시에 구분하여 정량할 수 있는 자외광 검출소자를 제공하는 것을 목적으로 한다.The present invention has been made to overcome the above-mentioned disadvantages of the prior art, and provides an ultraviolet light detecting element capable of simultaneously quantifying ultraviolet light A and ultraviolet light B without using a conventionally expensive ultraviolet light interference filter. It aims to do it.
도 1은 자외광 검출소자의 UV-A, UV-B 영역에서의 감도를 나타낸 그래프.1 is a graph showing the sensitivity in the UV-A, UV-B region of the ultraviolet light detection element.
도 2는 자외광 검출소자의 구조를 나타낸 모식도.Figure 2 is a schematic diagram showing the structure of the ultraviolet light detection element.
도 3은 태양광과 인공광 UV-A램프의 UV-A강도값에 대한 자외광 검출소자의 상대출력치를 도식한 그래프.Figure 3 is a graph showing the relative output value of the ultraviolet light detection element against the UV-A intensity value of sunlight and artificial light UV-A lamp.
도 4는 태양광과 인공광 UV-B램프의 UV-B강도값에 대한 자외광 검출소자의 상대출력치를 도식한 그래프.Figure 4 is a graph showing the relative output value of the ultraviolet light detection element against the UV-B intensity value of sunlight and artificial light UV-B lamp.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
1 : 전자외광 투과 필터 2 : 광 다이오드1: Electron light transmission filter 2: Photodiode
3 : 전 극 4 : 기 판3: all poles 4: substrate
5 : UV-A선택투과 필터 6 : 연산장치5: UV-A selective transmission filter 6: arithmetic unit
상기한 목적을 달성하기 위하여, 본 발명은 자외광의 투과성이 뛰어난 폴리메틸메타크릴레이트(PMMA)를 모재로 한 수지에 자외광의 선택적 투과를 목적으로 옥틸살리실레이트를 첨가하고 이를 볼록렌즈 모양으로 제작한 광필터를 제공한다.In order to achieve the above object, the present invention adds octyl salicylate for the purpose of selective transmission of ultraviolet light to a resin based on polymethyl methacrylate (PMMA) excellent in ultraviolet light transmittance and convex lens shape It provides an optical filter manufactured by.
본 발명은 또한 상기 광필터를 이용하여 UV-A와 UV-B를 동시에 구분하여 검출할 수 있는 것을 특징으로 하는 자외광 검출소자를 제공하는 것이 그 목적이다.Another object of the present invention is to provide an ultraviolet light detecting element, which is capable of simultaneously detecting UV-A and UV-B using the optical filter.
본 자외광 검출소자의 모식도는 도 2에서 나타내었으며 먼저 자외광 A를 검출하기 위하여 자외광 A선택투과 광필터를 통과한 광에 의해 센서에서 검출된 신호값으로 자외광 A만을 검출해 내며 자외광 B를 검출하기 위하여 전광선투과 광필터를 통과해서 나온 광에 의해 센서에서 검출된 신호값과 자외광 A선택투과 광필터를 통과해서 나온 광에 의해 센서에서 검출된 신호값을 연산하여 도출할 수 있다.The schematic diagram of the ultraviolet light detecting element is shown in FIG. 2. First, only the ultraviolet light A is detected as a signal value detected by the sensor by the light passing through the ultraviolet light A selective transmission optical filter to detect the ultraviolet light A. In order to detect B, a signal value detected by the sensor by the light passing through the all-optical light filter and a signal value detected by the sensor by the light passing through the ultraviolet light A-selective light filter can be calculated and derived. .
이하, 실시예를 통하여 본 발명은 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail with reference to Examples.
[실시예 1 ] 전자외광 투과 필터의 제작Example 1 Preparation of Electron Ultraviolet Light Transmitting Filter
톨루엔 용액을 용매로 하여 폴리메틸메타크릴레이트(PMMA)를 적당한 중량비로 혼합하여 수지를 완전히 녹인 뒤 볼록렌즈 모양의 광필터를 제작하였다.Polymethyl methacrylate (PMMA) was mixed in an appropriate weight ratio using a toluene solution as a solvent to completely dissolve the resin to prepare a convex lens-shaped optical filter.
[실시예 2] 자외광 A 선택투과형 광필터의 제작Example 2 Fabrication of Ultraviolet Light A Selective Transmissive Optical Filter
톨루엔 용액을 용매로 하여 폴리메틸메타크릴레이트(PMMA)를 적당한 중량비로 혼합하여 수지를 완전히 녹인 뒤 자외광 차단제인 옥틸살리실레이트 용액을 0.01내지 20중량% 첨가하여 볼록렌즈 모양의 광필터를 제작하였다.Polymethyl methacrylate (PMMA) was mixed in an appropriate weight ratio using a toluene solution as a solvent to completely dissolve the resin, and 0.01 to 20% by weight of an octyl salicylate solution, an ultraviolet light blocking agent, was added to prepare a convex lens-shaped optical filter. It was.
[실시예 3] 자외광 검출소자의 제작Example 3 Fabrication of Ultraviolet Light Detection Element
UV-A와 UV-B에 대해 감도를 갖는 두 개의 광 다이오드를 전극이 인쇄된 기판위에 다이본딩(Die bonding)한 뒤, 대기중의 습기나 기타 가스를 차단하기 위해 폴리메틸메타크릴레이트(PMMA)로 실링(Sealing) 하였다. 실시예 1, 실시예 2와 같이 제작된 볼록렌즈 모양의 광필터는 각각 렌즈홀더에 끼운 뒤 포토다이오드의 광입사부 상에 위치시켰다.Two photodiodes that are sensitive to UV-A and UV-B are die bonded on an electrode-printed substrate, and then polymethyl methacrylate (PMMA) is used to block moisture and other gases in the atmosphere. Sealing). The convex lens-shaped optical filters manufactured as in Example 1 and Example 2 were respectively placed in the lens holder and placed on the light incident portion of the photodiode.
상기의 방법으로 제작된 광필터는 퍼킨엘머사의 UV/VIS/NIR Spectrometer Lamda19 를 이용하여 290-400nm영역에서 투과율을 측정하였고 이에 검출소자에 사용한 센서의 감도값을 연산하여 필터를 장착한 센서의 상대감도를 도 1에 나타내었다.The optical filter manufactured by the above method measured permeability in the range of 290-400nm by using Perkin Elmer's UV / VIS / NIR Spectrometer Lamda19, and calculated the sensitivity value of the sensor used in the detection device to calculate the relative value of the sensor equipped with the filter. Sensitivity is shown in FIG.
이 때 자외광 검출소자의 UV-A센서의 감도의 피크파장은 334nm 였으며 UV-B센서의 감도의 피크파장은 306nm였다.At this time, the peak wavelength of the sensitivity of the UV-A sensor of the ultraviolet light detection element was 334 nm and the peak wavelength of the sensitivity of the UV-B sensor was 306 nm.
상기의 방법으로 만들어진 자외광 검출소자를 이용하여 실태양광과 인공광원인 UV-A , UV-B램프에서 센서의 감도 시험을 실시하였으며 이 결과를 도 3, 도 4에 나타내었다.Sensitivity test of the sensor in the UV-A, UV-B lamps of real sunlight and artificial light using the ultraviolet light detection device made by the above method was shown in Figures 3 and 4.
이 때, 인공광원으로는 SANKYO DENKI사의 UV-A Lamp (15W, 파장 : 315∼400nm / 피크 : 360nm), UV-B Lamp (15W, 파장 : 280∼360nm / 피크 : 306nm)를 사용하였다.At this time, a UV-A Lamp (15 W, wavelength: 315-400 nm / peak: 360 nm) and a UV-B Lamp (15 W, wavelength: 280-360 nm / peak: 306 nm) of SANKYO DENKI were used as artificial light sources.
또 측정 시 각각의 센서부는 태양광 혹은 인공광원에 수직이 되게 하였으며 이때 사용한 표준기기로는 VILBER LOURMAT사의 VLX3W이며 이 표준기기의 각 센서의 피크는 UV-A셀 : 365nm±2 이며 UV-B셀 : 313nm±2이고 피크의 반가폭 영역은 12nm±2였다.In addition, each sensor unit is perpendicular to sunlight or artificial light source during measurement. The standard equipment used is VLBER3 VLX3W of VILBER LOURMAT Corporation. The peak of each sensor of this standard equipment is UV-A cell: 365nm ± 2 and UV-B cell. : 313 nm ± 2 and the half width region of the peak was 12 nm ± 2.
이 때, 각 소자에서 검출되는 전류값은 각각 ADVANTEST사의 디지털멀티메타 (모델명 : R6452A / R6441A)를 사용하여 GP-IB제어에 의해 컴퓨터로 자동 측정하여 연산하였다.At this time, the current value detected in each device was automatically calculated by computer using GP-IB control using ADVANTEST's digital multimeter (model name: R6452A / R6441A).
도 3은 실제 태양광과 인공광 UV-A램프의 UV-A강도값에 대한 자외광 검출소자의 상대출력치를 표준기기로써 사용한 정밀 자외선측정기(VLX3W)의 출력치와 비교하여 나타낸 그래프이다. 여기서 R값은 상관계수를 나타내 것으로 상관계수의 값이 1일 때 X와 Y 사이에 직선관계가 있다는 것을 의미한다.3 is a graph showing the relative output value of the ultraviolet light detection element relative to the UV-A intensity value of the actual sunlight and artificial light UV-A lamp compared with the output value of the precision ultraviolet light meter (VLX3W) used as a standard device. Here, R represents a correlation coefficient, which means that there is a linear relationship between X and Y when the value of the correlation coefficient is 1.
이때 UV-A 강도값이 거의 일정한 인공광원 UV-A램프에서 측정된 데이터의 상관계수 값은 0.99982로 이는 표준기기에서 표시하는 값과 거의 직선적으로 비례하는 것을 볼 수 있으며 UV-A강도값이 수시로 변화하는 실제 태양광에서 측정된 상관계수값도 0.99396으로 고가의 표준기기에 필적할 만큼 직선비례관계가 나타나는 것을 알 수 있다.In this case, the correlation coefficient value of the data measured in the artificial light source UV-A lamp where UV-A intensity value is almost constant is 0.99982, which is almost linearly proportional to the value indicated by the standard equipment, and the UV-A intensity value is frequently Correlation coefficients measured in varying actual sunlight were also 0.99396, indicating a linear proportional relationship comparable to that of expensive standard equipment.
도 4는 실제 태양광과 인공광 UV-B램프의 UV-B강도값에 대한 자외광 검출소자의 상대출력치를 표준기기로써 사용한 정밀자외선측정기(VLX3W)의 출력치와 비교하여 나타낸 그래프이다. 이 때, UV-B램프에서 측정된 자외광 검출소자의 데이터 상관계수 값은 0.99676이며 태양광에서는 0.9743으로 UV-B광에서도 표준기기와 비교하여 직선비례관계를 보이는 것을 알 수 있다.4 is a graph showing the relative output value of the ultraviolet light detection element relative to the UV-B intensity value of the actual sunlight and artificial light UV-B lamps compared with the output value of the precision ultraviolet light measuring instrument (VLX3W) used as a standard instrument. At this time, the data correlation coefficient value of the ultraviolet light detection element measured in the UV-B lamp is 0.99676 and 0.9743 in the sunlight, it can be seen that the UV-B light also shows a linear proportional relationship with the standard equipment.
도 3, 4로부터 본 발명의 자외광 검출소자가 고가의 정밀측정기에 필적할 만한 상당히 신뢰성 있는 데이터를 제공한다는 것을 알 수 있다.It can be seen from FIGS. 3 and 4 that the ultraviolet light detection element of the present invention provides significantly reliable data comparable to expensive precision measuring instruments.
종래 자외광을 방출하는 광원에 포함된 유해 자외광을 검출하는 센서소자로써 Si, SiC 나 GaAs 계의 반도체를 이용한 소자가 이용되고 있으나 태양광과 같은 연속 파장대의 자외광을 방출하는 광원으로부터 조사되는 자외광 중 인체에 대한악영향의 효과가 다른 자외광 A와 자외광 B의 광량을 검출하기 위하여 고가의 자외광 간섭필터를 사용하였다. 본 발명에 의하면 종래의 고가의 자외광 간섭필터를 사용하지 않고도 자외광 A와 자외광 B의 동시 검출이 가능한 값싼 자외광 검출소자를 제공할 수 있다는 장점이 있다.Conventionally, a device using a semiconductor of Si, SiC, or GaAs is used as a sensor device for detecting harmful ultraviolet light included in a light source that emits ultraviolet light, but is irradiated from a light source that emits ultraviolet light in a continuous wavelength range such as sunlight. An expensive ultraviolet light interference filter was used to detect the amount of ultraviolet light A and ultraviolet light B, which have different effects on the human body. According to the present invention, it is possible to provide an inexpensive ultraviolet light detecting element capable of simultaneously detecting the ultraviolet light A and the ultraviolet light B without using a conventional expensive ultraviolet light interference filter.
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| JP2017084875A (en) * | 2015-10-23 | 2017-05-18 | ラピスセミコンダクタ株式会社 | Semiconductor device and method of manufacturing semiconductor device |
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| JP2627236B2 (en) * | 1991-05-08 | 1997-07-02 | 日本電信電話株式会社 | UV sensor and photochromic composition |
| KR19990078965A (en) * | 1999-08-25 | 1999-11-05 | 백순호 | A instrument of portable/institution type for measuring ultraviolet |
| JP2002043633A (en) * | 2000-07-25 | 2002-02-08 | Stanley Electric Co Ltd | White light emitting diode |
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| JP2017084875A (en) * | 2015-10-23 | 2017-05-18 | ラピスセミコンダクタ株式会社 | Semiconductor device and method of manufacturing semiconductor device |
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