KR20040009783A - Apparatus for manufacturing mixed cleaning solution and method of manufacturing mixed cleaning solution using the same - Google Patents
Apparatus for manufacturing mixed cleaning solution and method of manufacturing mixed cleaning solution using the same Download PDFInfo
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- KR20040009783A KR20040009783A KR1020020043841A KR20020043841A KR20040009783A KR 20040009783 A KR20040009783 A KR 20040009783A KR 1020020043841 A KR1020020043841 A KR 1020020043841A KR 20020043841 A KR20020043841 A KR 20020043841A KR 20040009783 A KR20040009783 A KR 20040009783A
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- ozone water
- stock solution
- cleaning
- washing
- mixed
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Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 112
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 70
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 10
- 239000011550 stock solution Substances 0.000 claims description 63
- 238000005406 washing Methods 0.000 claims description 52
- 239000007788 liquid Substances 0.000 claims description 36
- 239000000243 solution Substances 0.000 claims description 18
- 239000000356 contaminant Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 238000011002 quantification Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004065 wastewater treatment Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
본 발명은 혼합 세정액 제조 장치 및 이를 이용한 혼합 세정액 제조 방법에 관한 것으로, 특히 오존수와 세정원액과의 혼합 비율이 전체적으로 균일한 혼합 세정액을 만들어 웨이퍼의 세정 효과를 향상시킬 수 있는 혼합 세정액 제조 장치 및 이를 이용한 혼합 세정액 제조 방법에 관한 것이다.The present invention relates to a mixed cleaning solution production apparatus and a method for manufacturing a mixed cleaning solution using the same, in particular, a mixed cleaning solution manufacturing apparatus capable of improving the cleaning effect of a wafer by making a mixed cleaning solution having a uniform mixing ratio of ozone water and the cleaning stock solution as a whole, and the same It relates to the used mixed washing liquid production method.
반도체 제조 공정뿐만 아니라 액정 표시기 (LCD) 제조 공정시 소자의 성능과 수율에 직접적인 영향을 미치는 것이 제조 공정 중에 발생되는 오염물이다. 각 공정 후 웨이퍼 표면의 오염물은 기하급수적으로 늘어나게 되고, 이 오염물에 의해 소자의 수율은 급격히 감소하게 된다. 웨이퍼 세정 공정은 웨이퍼 표면의 모든 오염물을 완벽히 제거하는 것이 가장 이상적인 목표이기는 하지만 그것은 거의 불가능하다고 할 수 있다. 실제로 웨이퍼 세정 공정은 각 공정 전과 후에 실시하여 기하 급수적으로 증가하는 오염물을 최소한의 비율로 감소시키는 것이 그 주된 목적이다. 따라서 웨이퍼 세정 공정은 모든 공정 전후에 반드시 행해져야 한다. 반도체 소자 제조 공정 중 웨이퍼 표면 위에 오염되는 불순물의 종류는 크게 파티클, 유기 오염물, 무기 오염물, 금속 오염물 및 자연 산화막 등으로 나눌 수 있다.Contaminants generated during the manufacturing process that directly affect the performance and yield of the device in the liquid crystal display (LCD) manufacturing process as well as the semiconductor manufacturing process. After each process, contaminants on the wafer surface increase exponentially and the yield of the device is drastically reduced. The wafer cleaning process is almost impossible, although the ideal goal is to completely remove all contaminants from the wafer surface. In fact, the main purpose of the wafer cleaning process is before and after each process to reduce the exponentially increasing contaminants to a minimum rate. Therefore, the wafer cleaning process must be performed before and after all processes. The impurities contaminated on the wafer surface during the semiconductor device manufacturing process may be largely divided into particles, organic contaminants, inorganic contaminants, metal contaminants, and natural oxide films.
일반적으로, 반도체 세정 공정은 과산화수소를 근간으로 한 RCA 세정 공정이 가장 널리 사용되고 있다. 이러한 세정 화학액 내에서 과산화수소는 산화제의 역할을 함으로써 오염물과 웨이퍼 표면을 산화시키는 산화제로써의 역할을 하고 있다. 하지만 과산화수소는 세정 공정 동안 분해되어 물을 생성하기 때문에 세정액의 농도를 희석시켜 세정액의 수명을 단축시킨다. 결과적으로 세정액의 사용량이 증가함에 따라 화학 폐수량이 증가하고, 폐수 처리 공정 중 탈과산화수소 공정이 반드시 필요하며, 이로 인하여 폐수 처리 비용이 증가하고 환경적인 문제점을 야기시킨다. 이러한 문제점이 많은 과산화수소를 대치하기 위해 현재 새로운 세정 공정에 대한 연구가 활발히 진행되고 있다.Generally, the RCA cleaning process based on hydrogen peroxide is the most widely used semiconductor cleaning process. In such cleaning chemicals, hydrogen peroxide acts as an oxidant to oxidize contaminants and wafer surfaces. However, hydrogen peroxide decomposes during the cleaning process to produce water, which dilutes the concentration of the cleaning solution and shortens the life of the cleaning solution. As a result, as the amount of the cleaning solution is increased, the amount of chemical wastewater increases, and a dehydrogen peroxide process is necessary during the wastewater treatment process, thereby increasing the wastewater treatment cost and causing environmental problems. In order to replace hydrogen peroxide with many of these problems, researches on new cleaning processes are being actively conducted.
이러한 연구의 일환으로 최근에는 과산화수소보다 더 강력한 산화제로 알려져 있고, 용액 내에서 분해되어 새로운 반응 생성물을 형성하지 않으며, 환경 친화적이고 경제적인 오존을 근간으로 한 혼합 세정액이 사용되고 있다.As part of this research, it is recently known as a more powerful oxidant than hydrogen peroxide, does not decompose in solution to form a new reaction product, and an environmentally friendly and economical ozone-based mixed cleaning solution is used.
오존을 근간으로 한 혼합 세정액은 오존수와 세정원액을 일정 비율로 혼합하여 제조되는데, 현재 혼합 방법으로는 세정조에 오존수와 세정액을 공급하여 혼합하는 방법과 세정액을 공급하는 관에 오존수를 주입하여 혼합하는 방법이 널리 사용되고 있다. 이와 같은 방법으로 오존수와 세정원액을 혼합할 경우 두 용액의 혼합액이 웨이퍼를 세정하기 위한 세정조 내에서의 오존수와 세정원액의 혼합 비율이 균일하지 않아 웨이퍼와 웨이퍼 혹은 웨이퍼 내에서의 세정 효과가 국부적으로 차이를 나타내게 되어 반도체 제조 수율를 저하시키는 요인으로 작용하는 문제가 있다.Ozone-based mixed washing solution is prepared by mixing ozone water and washing stock solution at a certain ratio.As a current mixing method, ozone water and washing liquid are supplied to a washing tank and mixed, and ozone water is injected and mixed into a pipe supplying the washing liquid. The method is widely used. When the ozone water and the cleaning stock solution are mixed in this way, the mixing ratio of the two solutions in the cleaning tank for cleaning the wafer is not uniform, and the cleaning effect in the wafer and the wafer or the wafer is localized. There is a problem acting as a factor to decrease the semiconductor manufacturing yield to show the difference.
따라서, 본 발명은 오존수와 세정원액과의 혼합 비율이 전체적으로 균일한 혼합 세정액을 만들어 웨이퍼의 세정 효과를 향상시킬 수 있는 혼합 세정액 제조 장치 및 이를 이용한 혼합 세정액 제조 방법을 제공함에 그 목적이 있다.Accordingly, an object of the present invention is to provide a mixed cleaning liquid production apparatus capable of improving the cleaning effect of a wafer by making a mixed cleaning liquid having a uniform mixing ratio of ozone water and a cleaning stock solution, and a mixed cleaning liquid manufacturing method using the same.
본 발명의 다른 목적은 혼합 세정액의 온도를 세정 공정에 적합한 온도로 유지시켜 세정조에 공급하므로 웨이퍼의 세정 효과를 향상시킬 수 있는 혼합 세정액 제조 장치 및 이를 이용한 혼합 세정액 제조 방법을 제공함에 있다.Another object of the present invention is to provide a mixed cleaning liquid production apparatus and a mixed cleaning liquid production method using the same, which maintains the temperature of the mixed cleaning liquid at a temperature suitable for the cleaning process and supplies the cleaning tank to the cleaning effect of the wafer.
본 발명의 또 다른 목적은 혼합 세정액 내에 존재하는 파티클이나 불순물을 제거시켜 세정조에 공급하므로 웨이퍼의 세정 효과를 향상시킬 수 있는 혼합 세정액 제조 장치 및 이를 이용한 혼합 세정액 제조 방법을 제공함에 있다.Still another object of the present invention is to provide a mixed cleaning liquid production apparatus and a mixed cleaning liquid production method using the same, by removing particles or impurities present in the mixed cleaning liquid and supplying the cleaning tank to the cleaning tank.
이러한 목적을 달성하기 위한 본 발명의 실시예에 따른 혼합 세정액 제조 장치는 오존수 정량 제어기가 설치된 오존수 공급 장치; 세정원액 정량 제어기가 설치된 세정원액 공급 장치; 상기 오존수 공급 장치 및 상기 세정원액 공급 장치에 각각과 연결되어 오존수 및 세정원액을 수용하는 혼합조; 상기 혼합조에 연결되어 상기 혼합조에 수용된 상기 오존수 및 세정원액을 순환시켜 상기 오존수와 상기 세정원액이 균일하게 혼합된 혼합 세정액을 만들고, 밸브에 의해 상기 혼합 세정액을 세정조로 공급시키는 펌프; 상기 펌프와 상기 밸브 사이에 연결된 항온조; 및 상기 항온조와 상기 밸브 사이에 연결된 필터를 포함하여 구성된 것을 특징으로 한다.Mixed cleaning liquid production apparatus according to an embodiment of the present invention for achieving this object is an ozone water supply device is installed ozone water metering controller; A cleaning stock solution supplying apparatus provided with a cleaning stock solution controller; A mixing tank connected to each of the ozone water supply device and the cleaning stock solution supply device to receive the ozone water and the cleaning stock solution; A pump connected to the mixing tank to circulate the ozone water and the washing stock solution contained in the mixing tank to form a mixed washing liquid in which the ozone water and the washing stock solution are uniformly mixed, and supplying the mixed washing liquid to the washing tank by a valve; A thermostat connected between the pump and the valve; And it is characterized in that it comprises a filter connected between the thermostat and the valve.
또한, 상기한 목적을 달성하기 위한 본 발명의 실시예에 따른 혼합 세정액 제조 방법은 오존수 공급 장치에서 오존수를 생성시키고, 세정원액 공급 장치에 세정원액을 수용시키는 단계; 상기 오존수 공급 장치 및 상기 세정원액 공급 장치로 부터 상기 오존수 및 상기 세정원액을 혼합조에 공급하는 단계; 및 상기 혼합조에 수용된 오존수와 세정원액을 수회 내지 수십회 순환시켜 상기 오존수와 상기 세정원액을 일정한 비율로 균일하게 혼합시키는 단계를 포함하여 이루어지는 것을 특징으로 한다.In addition, the mixed cleaning solution production method according to an embodiment of the present invention for achieving the above object comprises the steps of generating ozonated water in the ozone water supply device, and receiving the cleaning stock solution in the cleaning stock solution supply device; Supplying the ozone water and the washing stock solution to the mixing tank from the ozone water supply device and the washing stock solution supply apparatus; And circulating the ozone water and the cleaning stock solution contained in the mixing tank several times to several tens of times to uniformly mix the ozone water and the cleaning stock solution at a constant ratio.
도 1은 본 발명의 실시예에 따른 혼합 세정액 제조 장치 및 이를 이용한 혼합 세정액 제조 방법을 설명하기 위한 구성도.1 is a block diagram for explaining a mixed cleaning liquid production apparatus according to an embodiment of the present invention and a mixed cleaning liquid manufacturing method using the same.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
10: 오존수 공급 장치11: 오존수 정량 제어기10: ozone water supply device 11: ozone water metering controller
20: 세정원액 공급 장치21: 세정원액 정량 제어기20: washing stock solution supply apparatus 21: washing stock solution
30: 혼합조40: 펌프30: mixing tank 40: pump
50: 항온조60: 필터50: thermostat 60: filter
70: 밸브80: 세정조70: valve 80: cleaning tank
90: 웨이퍼100: 혼합 세정액90: wafer 100: mixed cleaning liquid
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 설명함으로써, 본 발명을 상세하게 설명한다. 그러나, 본 발명은 이하에서 개시되는 실시예에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 것이며, 단지 본 실시예는 본 발명의 개시가 완전하도록 하며, 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, only this embodiment to make the disclosure of the present invention complete, and to those skilled in the art the scope of the invention It is provided for complete information.
도 1은 본 발명의 실시예에 따른 혼합 세정액 제조 장치 및 이를 이용한 혼합 세정액 제조 방법을 설명하기 위한 구성도이다.1 is a block diagram for explaining a mixed cleaning liquid production apparatus according to an embodiment of the present invention and a mixed cleaning liquid manufacturing method using the same.
본 발명의 혼합 세정액 제조 장치는 오존수 정량 제어기(11)가 설치된 오존수 공급 장치(10)와, 세정원액 정량 제어기(21)가 설치된 세정원액 공급 장치(20)와, 오존수 공급 장치(10) 및 세정원액 공급 장치(20)에 각각과 연결되어 오존수 및 세정원액을 수용하는 혼합조(30)와, 혼합조(30)에 연결되어 혼합조(30)에 수용된 오존수와 세정원액을 다시 혼합조(30)로 순환시켜 오존수와 세정원액이 균일하게 혼합된 혼합 세정액(100)을 만들고, 밸브(70)에 의해 혼합 세정액(100)을 웨이퍼(90)가 수용된 세정조(80)로 공급시키는 펌프(40)와, 펌프(40)와 밸브(70) 사이에 연결되어 펌프(40)로 부터 공급되는 혼합 세정액을 일정 온도로 유지시키는 항온조(50)와, 항온조(50)와 밸브(70) 사이에 연결되어 항온조(50)로 부터 공급되는 혼합 세정액 내에 존재하는 파티클이나 불순물을 제거시키면서 오존수와 세정원액을 균일하게 혼합시키는 필터(60)를 포함하여 구성된다.The mixed washing liquid production apparatus of the present invention includes an ozone water supply device 10 provided with an ozone water quantification controller 11, a washing stock solution supply device 20 provided with a cleaning stock solution controller 21, an ozone water supply device 10, and a washing unit. A mixing tank 30 connected to the stock solution supply device 20 to receive ozone water and a washing stock solution, and a mixing tank 30 connected to the mixing tank 30 to accommodate the ozone water and the washing stock solution contained in the mixing tank 30 again. Pump to supply mixed cleaning liquid 100 to the cleaning tank 80 in which the wafer 90 is accommodated by the valve 70 to make the mixed cleaning liquid 100 uniformly mixed with ozone water and the cleaning stock solution. And a thermostat 50 connected between the pump 40 and the valve 70 to maintain the mixed cleaning liquid supplied from the pump 40 at a constant temperature, and between the thermostat 50 and the valve 70. To remove particles and impurities present in the mixed cleaning liquid supplied from the thermostat 50. While is configured to include a filter 60 for uniformly mixing the ozone and the cleaning concentrate.
상기한 본 발명의 혼합 세정액 제조 장치를 이용한 혼합 세정액 제조 방법을 상세히 설명하면 다음과 같다.The mixed cleaning liquid production method using the mixed cleaning liquid production apparatus of the present invention described above is as follows.
세정 공정이 필요한 웨이퍼(90)가 제공되면, 오존수 공급 장치(10)에서는 오존수를 생성시키고, 세정원액 공급 장치(20)에는 제공된 웨이퍼(90) 세정에 적합한 세정원액을 수용시킨다.When the wafer 90 requiring the cleaning process is provided, the ozone water supply device 10 generates ozone water, and the cleaning stock solution supply device 20 accommodates the cleaning stock solution suitable for cleaning the provided wafer 90.
상기에서, 세정원액은 황산(H2SO4), 암모니아수(NH4OH), 질산(HNO3), 불산(HF), 디에치에프(DHF), 인산(H3PO4), 비오이(BOE) 및 염산(HCl)은 물론 웨이퍼 표면에 존재하는 파티클, 유기 오염물, 무기 오염물, 금속 오염물 및 자연 산화막 등을 제거할 수 있는 모든 화학제를 포함한다.In the above, the washing stock solution is sulfuric acid (H 2 SO 4 ), ammonia water (NH 4 OH), nitric acid (HNO 3 ), hydrofluoric acid (HF), dieth (DHF), phosphoric acid (H 3 PO 4 ), BOE (BOE) ) And hydrochloric acid (HCl) as well as all chemicals capable of removing particles, organic contaminants, inorganic contaminants, metal contaminants and natural oxides, etc., present on the wafer surface.
오존수 공급 장치(10)에 설치된 오존수 정량 제어기(11)에 의해 오존수를 혼합조(30)에 일정량 공급하고, 세정원액 공급 장치(20)에 설치된 세정원액 정량 제어기(21)에 의해 세정원액을 혼합조(30)에 일정량 공급한다.A certain amount of ozone water is supplied to the mixing tank 30 by the ozone water quantification controller 11 installed in the ozone water supply device 10, and the washing stock solution is mixed by the washing stock solution quantification controller 21 installed in the washing stock solution supply device 20. A certain amount is supplied to the tank 30.
상기에서, 오존수 및 세정원액은 혼합조(30)에 동시에 공급할 수도 있고, 세정원액을 먼저 공급할 수도 있지만, 세정원액이 혼합조(30)에 먼저 공급될 경우 비록 혼합조(30)가 혼합 세정액에 적합한 재질로 만들어 졌다할지라도 세정원액이 혼합조(30)의 표면에 흡착되거나 부식시킬 우려가 있기 때문에 오존수를 먼저 공급하는 것이 바람직하다. 오존수 정량 제어기(11) 및 세정원액 정량 제어기(21) 각각에 의해 오존수와 세정원액과의 비율이 결정된다. 오존수와 세정원액과의 혼합 비율을 가변될 수 있어 본 발명의 실시예에서는 혼합 비율에 따른 수치를 한정하지 않는다. 즉, 세정 공정이 진행될 웨이퍼(100)가 전단계에서 어떠한 공정이 진행되었느냐에 따라 존재하는 오염원이 다르기 때문에 이러한 점을 고려하여 가장 적절한 혼합 비율이 설정된다.In the above, the ozone water and the washing stock solution may be simultaneously supplied to the mixing tank 30, and the washing stock solution may be supplied first, even if the mixing stock solution is first supplied to the mixing tank 30. Although it is made of a suitable material, it is preferable to supply ozone water first because the washing stock solution may be adsorbed or corroded to the surface of the mixing tank 30. The ratio of ozone water and the washing stock solution is determined by the ozone water metering controller 11 and the washing stock solution quantifying controller 21, respectively. The mixing ratio of the ozone water and the washing stock solution may be varied, so that the numerical value according to the mixing ratio is not limited in the embodiment of the present invention. In other words, since the contamination source is different depending on which process is performed in the previous step, the most suitable mixing ratio is set in consideration of this point.
일정 비율로 혼합조(30)에 수용된 오존수와 세정원액은 펌프(40)에 의해 항온조(50), 필터(60), 혼합조(30) 순서로 세정 공정이 시작될 때까지 순환되고, 이로 인하여 오존수와 세정원액이 균일하게 혼합되고 일정한 온도가 유지된 혼합 세정액(100)이 제조된다.The ozone water and the washing stock solution contained in the mixing tank 30 at a predetermined ratio are circulated by the pump 40 until the cleaning process starts in the order of the thermostat 50, the filter 60, and the mixing tank 30, and thus the ozone water And the washing stock solution is uniformly mixed and a mixed washing solution 100 is maintained at a constant temperature.
상기에서, 혼합 세정액(100)을 제조하기 위한 순환 횟수는 특정 횟수로 한정되지 않지만, 균일한 혼합을 위해 바람직하게는 수회 내지 수십회 순환시킨다. 항온조(50)는 순환되는 혼합 세정액의 온도가 웨이퍼(90) 세정에 적합하도록 온도를 유지시키는 역할을 한다. 필터(60)는 혼합 세정액 내에 존재하는 파티클이나 불순물을 제거시키면서 오존수와 세정원액을 균일하게 혼합시키는 역할을 한다.In the above, the number of cycles for producing the mixed cleaning liquid 100 is not limited to a specific number, but is preferably circulated several times to several tens for uniform mixing. The thermostat 50 serves to maintain the temperature so that the temperature of the mixed cleaning liquid circulated is suitable for cleaning the wafer 90. The filter 60 serves to uniformly mix the ozone water and the cleaning stock solution while removing particles and impurities present in the mixed cleaning solution.
이렇게 제조된 혼합 세정액(100)은 웨이퍼(90)가 수용된 세정조(80)로 공급되어 웨이퍼(90) 세정 공정이 진행된다. 혼합조(30)로의 순환과 세정조(80)로의 공급을 위한 수단은 혼합조(30), 필터(60) 및 세정조(80) 각각에 연결된 밸브(70)가 그 역할을 한다. 혼합 세정액(100)을 세정조(80)로 공급하는 원동력은 펌프(40)이다.The mixed cleaning solution 100 thus prepared is supplied to the cleaning bath 80 in which the wafer 90 is accommodated, and the cleaning process of the wafer 90 is performed. Means for circulation to the mixing tank 30 and the supply to the cleaning tank 80 is a valve 70 connected to each of the mixing tank 30, the filter 60 and the cleaning tank (80). The driving force for supplying the mixed washing liquid 100 to the washing tank 80 is the pump 40.
상술한 바와 같이, 본 발명은 혼합조에 공급되어진 오존수와 세정원액을 혼합조→펌프→항온조→필터→혼합조로 순환시켜 일정 온도를 유지하고, 파티클 및 불순물이 없으면서, 오존수와 세정원액이 일정 혼합 비율로 균일하게 혼합된 혼합 세정액을 제조 하므로, 세정조 내의 웨이퍼와 웨이퍼 혹은 웨이퍼 내에서의 세정 효과가 균일하게 이루어져 반도체 제조 공정에서의 불량을 방지하여 수율를 향상시킬 수 있다.As described above, in the present invention, the ozone water and the washing stock solution supplied to the mixing tank are circulated to the mixing tank → pump → thermostat → filter → mixing tank to maintain a constant temperature, and there is no particle or impurities, and the ozone water and washing stock solution have a constant mixing ratio. Since the mixed cleaning liquid is uniformly mixed, the cleaning effect in the wafer and the wafer or the wafer in the cleaning tank is uniform, thereby preventing defects in the semiconductor manufacturing process and improving the yield.
Claims (12)
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100765441B1 (en) * | 2006-01-06 | 2007-10-09 | 하아나반도체장비 주식회사 | Surface active agent feeder |
| KR100904460B1 (en) * | 2007-12-07 | 2009-06-24 | 세메스 주식회사 | Apparatus and method for supplying ozonated water mixture, and substrate treating facility using the same |
| US9845444B2 (en) | 2014-11-18 | 2017-12-19 | Samsung Electronics Co., Ltd. | Cleaning composition after chemical mechanical polishing of organic film and cleaning method using the same |
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| JPH04125927A (en) * | 1990-09-18 | 1992-04-27 | Fujitsu Ltd | Method of washing substrate |
| KR0122299Y1 (en) * | 1992-01-13 | 1998-08-17 | 문정환 | Auto wet station system |
| KR19980015769A (en) * | 1996-08-23 | 1998-05-25 | 김광호 | Method for cleaning semiconductor wafers |
| JP3557601B2 (en) * | 1999-07-15 | 2004-08-25 | 東京エレクトロン株式会社 | Cleaning / drying processing apparatus and method |
| KR100368130B1 (en) * | 1999-12-15 | 2003-01-15 | 주식회사 에이텍 | Apparatus for cleaning semiconductor and method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100765441B1 (en) * | 2006-01-06 | 2007-10-09 | 하아나반도체장비 주식회사 | Surface active agent feeder |
| KR100904460B1 (en) * | 2007-12-07 | 2009-06-24 | 세메스 주식회사 | Apparatus and method for supplying ozonated water mixture, and substrate treating facility using the same |
| US9845444B2 (en) | 2014-11-18 | 2017-12-19 | Samsung Electronics Co., Ltd. | Cleaning composition after chemical mechanical polishing of organic film and cleaning method using the same |
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