KR20040006199A - Fringe field switching mode liquid crystal display - Google Patents
Fringe field switching mode liquid crystal display Download PDFInfo
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- KR20040006199A KR20040006199A KR1020020040192A KR20020040192A KR20040006199A KR 20040006199 A KR20040006199 A KR 20040006199A KR 1020020040192 A KR1020020040192 A KR 1020020040192A KR 20020040192 A KR20020040192 A KR 20020040192A KR 20040006199 A KR20040006199 A KR 20040006199A
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- liquid crystal
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- fringe field
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 35
- 239000010408 film Substances 0.000 claims abstract description 18
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
Description
본 발명은 반사형 프린지 필드 스위칭 액정표시장치에 관한 것으로, 특히 반사전극을 사용하고, 횡방향의 전계를 인가하는 반사형 프린지 필드 스위칭 액정표시장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflective fringe field switching liquid crystal display device, and more particularly, to a reflective fringe field switching liquid crystal display device using a reflective electrode and applying an electric field in a lateral direction.
일반적인 FFS 모드 액정표시장치는 일반적인 IPS 모드 액정 표시 장치의 낮은 개구율 및 투과율을 개선시키기 위하여, 대한민국 특허출원 제98-9243호로 출원되었다.A general FFS mode liquid crystal display device has been filed in Korean Patent Application No. 98-9243 to improve the low aperture ratio and transmittance of a general IPS mode liquid crystal display device.
이러한 FFS 모드 액정 표시 장치는 카운터 전극과 화소 전극을 투명 전도체로 형성하면서, 카운터 전극과 화소 전극과의 간격을 상하 기판 사이의 간격보다 좁게 형성하여, 카운터 전극과 화소 전극 상부에 프린지 필드(fringe filed)가 형성되도록 함으로써, 전극들 상부에 존재하는 액정 분자들이 모두 동작되도록 한다.In the FFS mode liquid crystal display, the counter electrode and the pixel electrode are formed of a transparent conductor, and the gap between the counter electrode and the pixel electrode is formed to be narrower than the gap between the upper and lower substrates, and the fringe filed is formed on the counter electrode and the pixel electrode. ) Is formed so that all of the liquid crystal molecules present on the electrodes are operated.
한편, 일반적인 반사형 액정표시장치는 백라이트와 같은 별도의 광원이 요구되지 않고, 자연광이 광원으로 이용된다. 이러한 반사형 액정표시장치의 개략적인 원리는 상부기판으로부터 자연광이 입사되면, 하부기판의 저면에 배치되는 반사판을 통하여 다시 빛이 반사되어진다. 이때, 광은 액정분자들의 배열 상태에 따라서 흡수되거나 반사, 통과된다.On the other hand, the general reflective liquid crystal display device does not require a separate light source such as a backlight, and natural light is used as the light source. A general principle of the reflective liquid crystal display device is that when natural light is incident from the upper substrate, light is reflected again through the reflecting plate disposed on the bottom surface of the lower substrate. At this time, the light is absorbed, reflected or passed according to the arrangement state of the liquid crystal molecules.
이하, 첨부된 도면을 참조하여 종래의 반사형 프린지 필드 스위칭 액정표시장치에 대하여 설명하기로 한다.Hereinafter, a conventional reflective fringe field switching liquid crystal display device will be described with reference to the accompanying drawings.
도 1은 종래의 반사형 프린지 필드 스위칭 액정표시장치를 나타낸 단면도이다.1 is a cross-sectional view of a conventional reflective fringe field switching liquid crystal display device.
도 1에 도시한 바와 같이 게이트 버스 라인 및 데이터 버스 라인이 교차 배열되어 단위 화소영역이 한정된 투명한 하부기판(10)상의 상기 게이트 버스 라인과 데이터 버스 라인의 교차점 부근에는 박막 트랜지스터가 형성된다.As shown in FIG. 1, a thin film transistor is formed near an intersection point of the gate bus line and the data bus line on the transparent lower substrate 10 where the gate bus line and the data bus line are intersected and have a unit pixel area defined.
이어, 상기 결과물 상부에 게이트 절연막(20)이 형성된 후, 상기 단위 화소영역에 사각 플레이트 형상으로 불투명 반사물질로 구성된 카운터 전극(30)이 형성되고, 상기 카운터 전극(30)과 오버랩되도록 상기 단위 화소영역에 투명한 물질로 구성된 화소전극(50)이 형성된다. 이때, 상기 화소전극(50)은 빗살형태로 형성된다.Subsequently, after the gate insulating film 20 is formed on the resultant product, a counter electrode 30 made of an opaque reflective material in a square plate shape is formed in the unit pixel area, and the unit pixel is overlapped with the counter electrode 30. The pixel electrode 50 made of a transparent material is formed in the region. In this case, the pixel electrode 50 is formed in the shape of a comb.
여기서, 상기 카운터 전극(30)과 상기 화소전극(50)은 보호막(40)을 사이에 두고 절연된다.Here, the counter electrode 30 and the pixel electrode 50 are insulated with the passivation layer 40 therebetween.
한편, 상기와 같이 구성된 종래의 반사형 프린지 필드 구동 액정표시장치는 다음과 같이 동작한다.Meanwhile, the conventional reflective fringe field driving liquid crystal display device configured as described above operates as follows.
상기 카운터 전극(30)과 화소전극(50) 사이에 전계가 형성되면, 상기 카운터 전극(30)과 화소전극(50) 사이의 거리 즉, 보호막(40)의 두께보다 상하부 기판간의 거리가 크므로 상기 카운터 전극(30)과 화소전극(50) 사이에 수직 성분을 포함하는 프린지 필드가 형성된다. 상기와 같은 프린지 필드는 카운터 전극(30) 및 화소전극(50) 상부 전역에 미치게 되며, 전극 상부에 있는 액정 분자들을 모두 동작시킨다.When an electric field is formed between the counter electrode 30 and the pixel electrode 50, the distance between the counter electrode 30 and the pixel electrode 50, that is, the distance between the upper and lower substrates is greater than the thickness of the passivation layer 40. A fringe field including a vertical component is formed between the counter electrode 30 and the pixel electrode 50. The fringe field as described above extends across the counter electrode 30 and the pixel electrode 50, and operates all of the liquid crystal molecules on the electrode.
그러나 상기와 같은 종래의 반사형 프린지 필드 스위칭 액정표시장치에 있어서는 다음과 같은 문제점이 있었다.However, the conventional reflective fringe field switching liquid crystal display device has the following problems.
액정 분자들을 횡방향으로 동작하도록 절연막을 사이에 두고 화소전극과 카운터 전극을 서로 다른 레이어에 형성함에 횡방향으로 충분한 전계가 걸리지 않는다. 따라서, IPS(In Plain Switching)에 비해 동작 특성을 개선시킬 수 없었다.In order to form the pixel electrode and the counter electrode in different layers with the insulating film interposed therebetween to operate the liquid crystal molecules in the lateral direction, a sufficient electric field is not applied in the lateral direction. Therefore, the operating characteristics cannot be improved as compared with IPS (In Plain Switching).
본 발명은 상기와 같은 문제점을 해결하기 위하여 안출한 것으로 화소전극과 카운터 전극을 동일 레이어에 형성하여 횡전계를 향상시키고, 액정의 응답속도를 향상시킬 수 있는 반사형 프린지 필드 스위칭 액정표시장치를 제공하는데 그 목적이 있다.The present invention provides a reflective fringe field switching liquid crystal display device that can improve the transverse electric field and improve the response speed of liquid crystal by forming a pixel electrode and a counter electrode on the same layer. Its purpose is to.
도 1은 종래의 반사형 프린지 필드 스위칭 액정표시장치를 나타낸 단면도1 is a cross-sectional view showing a conventional reflective fringe field switching liquid crystal display device
도 2a는 본 발명의 일실시예에 따른 반사형 프린지 필드 스위칭 액정표시장치를 나타낸 단면도2A is a cross-sectional view illustrating a reflective fringe field switching liquid crystal display device according to an exemplary embodiment of the present invention.
도 2b는 도 2a의 A 부분을 확대한 도면FIG. 2B is an enlarged view of a portion A of FIG. 2A
도 3은 본 발명의 다른 실시예에 따른 반사형 프린지 필드 스위칭 액정표시장치를 나타낸 단면도3 is a cross-sectional view illustrating a reflective fringe field switching liquid crystal display according to another exemplary embodiment of the present invention.
도 4는 본 발명의 또 다른 실시예에 따른 반사형 프린지 필드 스위칭 액정표시장치를 나타낸 단면도4 is a cross-sectional view illustrating a reflective fringe field switching liquid crystal display device according to another exemplary embodiment of the present invention.
도 5는 본 발명의 또 다른 실시예에 따른 반사형 프린지 필드 스위칭 액정표시장치를 나타낸 단면도5 is a cross-sectional view illustrating a reflective fringe field switching liquid crystal display device according to still another embodiment of the present invention.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
100 : 기판 110 : 게이트 절연막100 substrate 110 gate insulating film
120 : 요철 형상의 보호막 130 : 카운터 전극120: uneven protective film 130: counter electrode
140 : 화소전극 150 : 컬러필터140: pixel electrode 150: color filter
상기와 같은 목적을 달성하기 위한 본 발명의 반사형 프린지 필드 스위칭 액정표시장치는 게이트 버스 라인 및 데이터 버스 라인이 교차 배열되어 단위 화소영역이 정의된 투명한 기판에 있어서, 상기 게이트 버스 라인과 데이터 버스 라인의 교차점 부근에 형성된 박막 트랜지스터와, 상기 결과물 상부에 순차적으로 형성된 게이트 절연막 및 요철형상을 갖는 보호막, 상기 요철형상을 갖는 보호막의 각각의 측면에 교대로 형성된 투명한 화소전극과 불투명 카운터 전극을 포함하여 구성됨을 특징으로 한다.In the reflective fringe field switching liquid crystal display according to the present invention, the gate bus line and the data bus line are provided in a transparent substrate having a gate pixel line and a data bus line intersecting to define a unit pixel region. And a thin film transistor formed near the intersection of the gate, the gate insulating film and the passivation film having the concave-convex shape sequentially formed on the resultant, and the transparent pixel electrode and the opaque counter electrode formed alternately on each side of the passivation film having the concave-convex shape. It is characterized by.
또한, 상기 화소전극과 카운터 전극간의 간격은 5.0∼5.5㎛인 것이 바람직하다.In addition, the interval between the pixel electrode and the counter electrode is preferably 5.0 to 5.5㎛.
또한, 상기 요철의 경사 길이에 대한 화소전극과 카운터 전극의 길이의 비가0.5∼0.7이고, 상기 화소전극 및 카운터 전극의 테이퍼각은 30∼75°인 것이 바람직하다.Further, it is preferable that the ratio of the length of the pixel electrode and the counter electrode to the inclined length of the unevenness is 0.5 to 0.7, and the taper angle of the pixel electrode and the counter electrode is 30 to 75 degrees.
또한, 상기 요철수는 한 화소안에 3∼5%가 셀 캡의 높이인 구조이며, 상기 요철부가 지주 스페이서 역할을 하는 것이 바람직하다.In addition, the concave-convex water has a structure in which 3 to 5% is the height of the cell cap in one pixel, and the concave-convex portion preferably serves as a strut spacer.
또한, 상기 요철은 한 화소 상하 중심을 기준으로 좌우로 요철이 대칭이면서 높이는 점점 작아지게 하며, 그 요철에 테이퍼각은 화소중심을 향하여 원형을 그리는 것이 바람직하다.In addition, the unevenness makes the unevenness symmetrical to the left and right with respect to the center of the top and bottom of the pixel, and the height gradually decreases, and the taper angle in the unevenness is preferable to draw a circle toward the pixel center.
또한, 상기 보호막을 칼라필터로 형성하는 것이 바람직하다.It is also preferable to form the protective film with a color filter.
이하, 첨부된 도면을 참조하여 본 발명의 반사형 프린지 필드 스위칭 액정표시장치에 대하여 보다 상세히 설명하기로 한다.Hereinafter, the reflective fringe field switching liquid crystal display of the present invention will be described in detail with reference to the accompanying drawings.
도 2a는 본 발명의 일실시예에 따른 반사형 프린지 필드 스위칭 액정표시장치를 나타낸 단면도이고, 도 2b는 도 2a의 A 부분을 확대한 도면이다.FIG. 2A is a cross-sectional view illustrating a reflective fringe field switching liquid crystal display device according to an exemplary embodiment of the present invention, and FIG. 2B is an enlarged view of portion A of FIG. 2A.
도 2a에 도시한 바와 같이 게이트 버스 라인 및 데이터 버스 라인이 교차 배열되어 단위 화소영역이 한정된 투명한 하부기판(100)상의 상기 게이트 버스 라인과 데이터 버스 라인의 교차점 부근에는 박막 트랜지스터가 형성된다.As shown in FIG. 2A, a thin film transistor is formed near an intersection point between the gate bus line and the data bus line on the transparent lower substrate 100 where the gate bus line and the data bus line are intersected to define a unit pixel area.
이어, 상기 결과물 상부에 게이트 절연막(110)이 형성되고, 상기 게이트 절연막(110) 상부에 요철 형상을 갖는 보호막(120)이 형성된다.Subsequently, a gate insulating layer 110 is formed on the resultant, and a protective layer 120 having an uneven shape is formed on the gate insulating layer 110.
이어서, 상기 요철 형상의 보호막(120) 측면에 각각 투명한 화소전극(140)과 불투명한 카운터 전극(130)이 형성된다. 이때, 상기 화소전극(140)과 카운터 전극(130)은 상기 요철 형상의 보호막(120) 측면에 교대로 형성된다.Subsequently, transparent pixel electrodes 140 and opaque counter electrodes 130 are formed on side surfaces of the uneven protective film 120. In this case, the pixel electrode 140 and the counter electrode 130 are alternately formed on side surfaces of the uneven protective film 120.
그리고 상기 요철 형상의 경사 길이에 대한 상기 화소전극(140)과 카운터 전극(130)의 길이의 비가 도 2b에 도시한 바와 같이 0.5∼0.7이고, 상기 화소전극(140) 및 카운터 전극(130)의 테이퍼각은 30∼75°이다. 즉, 요철 형상의 경사각이 30∼75°이다.The ratio of the length of the pixel electrode 140 and the counter electrode 130 to the inclined length of the uneven shape is 0.5 to 0.7 as shown in FIG. 2B, and the ratio of the pixel electrode 140 and the counter electrode 130 to each other. Taper angle is 30-75 degrees. That is, the inclination angle of the uneven shape is 30 to 75 degrees.
또한, 상기 화소전극(140)과 카운터 전극(130)간의 간격은 5.0∼5.5㎛이며, 상기 요철 형상의 수는 한 화소안에 3∼5%가 셀 캡의 높이인 구조이고, 상기 요철 형성이 지주 스페이서 역할을 한다.In addition, the interval between the pixel electrode 140 and the counter electrode 130 is 5.0 to 5.5 占 퐉, and the number of the uneven shape is 3 to 5% of the height of the cell cap in one pixel, the uneven formation is post It acts as a spacer.
한편, 도 3에 도시한 바와 같이 상기 요철 형상은 한 화소 상하 중심을 기준으로 좌우로 요철이 대칭이면서 높이는 점점 작아지게 하며, 그 요철 형상의 테이퍼각은 도 4와 같이 화소중심을 향하여 원형으로 한다.On the other hand, as shown in FIG. 3, the unevenness of the unevenness becomes symmetrical and the height gradually decreases from the left and right of the center of one pixel, and the tapered angle of the unevenness is circular toward the pixel center as shown in FIG. .
그리고 도 5에 도시한 바와 같이 상기 보호막(120)을 요철 형상을 갖는 칼라필터(150)로 형성하므로 별도의 컬러필터가 필요 없고, 컬러필터의 마진이 필요 없으며, 개구율이 커진다.As shown in FIG. 5, since the passivation layer 120 is formed of the color filter 150 having an uneven shape, a separate color filter is not required, a margin of the color filter is not required, and the aperture ratio is increased.
이상에서 설명한 바와 같이 본 발명의 반사형 프린지 필드 액정표시장치에 있어서는 화소전극과 카운터 전극을 요철 형상을 갖는 보호막을 사이에 두고 동일 레이어에 형성하므로 횡방향으로 충분한 전계가 인가되므로 동작 특성을 개선시킬 수 있다.As described above, in the reflective fringe field liquid crystal display of the present invention, since the pixel electrode and the counter electrode are formed on the same layer with the protective film having the uneven shape interposed therebetween, a sufficient electric field is applied in the lateral direction to improve the operation characteristics. Can be.
또한, 화소전극과 카운터 전극의 간격을 5㎛ 이하로 좁게 형성하므로 액정의 응답 속도를 향상시킬 수 있으며, 요철의 높이를 조절하여 개구율 및 시야각을 보다 효율적으로 향상시킬 수 있다.In addition, since the gap between the pixel electrode and the counter electrode is formed to be 5 μm or less, the response speed of the liquid crystal can be improved, and the aperture ratio and the viewing angle can be improved more efficiently by adjusting the height of the unevenness.
Claims (6)
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| KR1020020040192A KR20040006199A (en) | 2002-07-11 | 2002-07-11 | Fringe field switching mode liquid crystal display |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100824251B1 (en) * | 2005-03-23 | 2008-04-24 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | Active matrix liquid crystal display device |
| KR101443163B1 (en) * | 2006-12-25 | 2014-09-19 | 재팬 디스프레이 웨스트 인코포레이트 | Liquid crystal display device and display apparatus |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100824251B1 (en) * | 2005-03-23 | 2008-04-24 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | Active matrix liquid crystal display device |
| KR101443163B1 (en) * | 2006-12-25 | 2014-09-19 | 재팬 디스프레이 웨스트 인코포레이트 | Liquid crystal display device and display apparatus |
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