KR20040003475A - Method and device of In - line metrology in CMP - Google Patents
Method and device of In - line metrology in CMP Download PDFInfo
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- KR20040003475A KR20040003475A KR1020020038190A KR20020038190A KR20040003475A KR 20040003475 A KR20040003475 A KR 20040003475A KR 1020020038190 A KR1020020038190 A KR 1020020038190A KR 20020038190 A KR20020038190 A KR 20020038190A KR 20040003475 A KR20040003475 A KR 20040003475A
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- wafer
- cmp
- polishing
- polished
- film quality
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000005498 polishing Methods 0.000 claims abstract description 48
- 238000004140 cleaning Methods 0.000 claims abstract description 17
- 238000005259 measurement Methods 0.000 claims abstract description 6
- 238000007517 polishing process Methods 0.000 claims description 15
- 239000000126 substance Substances 0.000 abstract 1
- 239000002699 waste material Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 44
- 239000004744 fabric Substances 0.000 description 8
- 239000002002 slurry Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
- B24B49/045—Specially adapted gauging instruments
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
본 발명은 CMP 설비의 설비내 계측장치 및 그에 따른 방법에 관한 것이다.The present invention relates to an in-plant metrology and a method thereof.
최근 반도체 소자가 고집적화 됨에 따라 패턴의 초미세화 및 고단차화가 수반되고 있다. 이에 따라 미세한 디자인 룰을 가지는 반도체소자의 미세구조를 실현하기 위한 방법으로서 사진공정, 식각공정, CVD 공정 등과 함께 CMP공정이 매우 중요한 공정 단계로 부각되고 있으며, 그 적용 횟수도 증가하고 있다.Recently, as semiconductor devices have been highly integrated, ultrafine patterns and high steps of patterns have been accompanied. Accordingly, as a method for realizing the microstructure of a semiconductor device having a fine design rule, the CMP process has emerged as a very important process step along with a photo process, an etching process, and a CVD process, and the number of applications thereof has also increased.
종래의 CMP 설비에 대한 블록도를 도 1에 도시하고 있는 데 이를 설명하는 다음과 같다.A block diagram of a conventional CMP facility is shown in FIG. 1, which is described below.
종래의 CMP공정을 수행하는 CMP 설비(10)는 메인 폴리셔(Main polisher : 12), 세정장치(14), 제어기(16) 등을 구비하고 있다.The CMP facility 10 performing the conventional CMP process is provided with a main polisher 12, a cleaning device 14, a controller 16, and the like.
우선, 메인 폴리셔(12)는 회전하는 정반 위에 연마포가 부착된 정반 조립체와, 정반 조립체의 상부에서 상하 이동되며 회전하는 연마헤드의 저면에 웨이퍼를 진공흡착하기 위한 헤드가 설치된 연마 헤드 조립체와, 정반조립체의 연마포 위에 연마제를 공급하기 위한 슬러리 공급수단 등으로 구성되어 CMP 설비에 구비되어 있다. 상기 세정장치(14)는 상기 메인 폴리셔(12)에서 연마공정이 완료된 웨이퍼를 세정하기 위해 CMP 설비에 구비되어 있으며, 상기 제어기(16)는 상기 CMP 공정의 전반적인 동작을 제어하기 위해 구비하고 있다.First, the main polisher 12 includes a surface assembly having a polishing cloth attached to a rotating surface plate, a polishing head assembly having a head for vacuum suctioning wafers on a bottom surface of the rotating polishing head, which is moved up and down at the top of the surface assembly. And a slurry supply means for supplying an abrasive on the polishing cloth of the surface assembly, and is provided in the CMP facility. The cleaning device 14 is provided in the CMP facility for cleaning the wafer in which the polishing process is completed in the main polisher 12, and the controller 16 is provided to control the overall operation of the CMP process. .
이와 같은 CMP 설비의 메인 폴리셔(12)에서는 로딩된 웨이퍼를 사전에 프로그래밍된 헤드 하부로 운반하여 헤드에 진공장착하면, 헤드는 웨이퍼 캐리어 암에 의해 정반 상부로 이동하고, 연마헤드는 하강하여 헤드에 장착된 웨이퍼의 평면이 연마포에 접촉되도록 한다. 이와 같이 준비된 상태에서 정반조립체와 연마 헤드 조립체를 동시에 회전시켜 웨이퍼면에 형성된 요철을 평탄화한다. 이와 동시에 슬러리 공급수단에서는 연마제를 공급하여 연마공정을 진행한다. 이와 같은 연마공정이 완료되면 세정장치(14)로 이동하여 세정작업을 수행하게 됨으로써 CMP 공정이 완료된다.In the main polisher 12 of the CMP facility, when the loaded wafer is transported under the pre-programmed head and vacuum-mounted on the head, the head is moved to the upper surface by the wafer carrier arm, and the polishing head is lowered and the head is lowered. The plane of the wafer mounted thereon is brought into contact with the polishing cloth. In this state, the surface assembly and the polishing head assembly are rotated at the same time to planarize the unevenness formed on the wafer surface. At the same time, the slurry supply means supplies an abrasive to carry out the polishing process. After the polishing process is completed, the cleaning apparatus 14 is moved to perform the cleaning operation, thereby completing the CMP process.
이러한 구성을 보면 회전하는 정반 조립체 위에는 연마포가 부착되어 있는데, 이 연마포는 일정기간을 사용하고 나면 그 연마도가 떨어지게 되므로, 이러한 연마포의 마모도에 따른 연마 가능 정도를 정확하게 예측하기가 어렵고, CMP 공정에 들어가는 막질의 종류가 다양하므로 막질별 제거율의 차이가 존재하며, 연마제인 슬러리의 공급량, 연마헤드의 압력 및 연마헤드의 회전수 등이 다양한 변수로 작용하게 된다. 상술한 변수들에 의해 웨이퍼에 형성된 막질의 두께는 작업자의 의도와는 무관하게 연마될 수 있는 문제점이 있었다.In this configuration, the polishing cloth is attached to the rotating surface plate assembly. Since the polishing cloth is less polished after a certain period of time, it is difficult to accurately predict the degree of polishing according to the wear of the polishing cloth. Since there are various kinds of film quality to enter the CMP process, there is a difference in removal rate for each film quality, and the supply of slurry slurry, the pressure of the polishing head, and the rotational speed of the polishing head act as various variables. The thickness of the film quality formed on the wafer by the above-described parameters has a problem that can be polished regardless of the intention of the operator.
따라서 작업자는 CMP 공정이 완료된 웨이퍼의 막질이 작업자의 의도대로 연마되었는 지를 계측할 수 있도록 하는 계측장치(20)가 CMP 설비(10)외부에 구비되는데, CMP 공정이 완료된 웨이퍼의 각 지점 별 막질의 산포편차를 측정하여 다음 공정으로의 이동유무를 판단할 수 있도록 하고 있다.Therefore, the operator is provided with a measuring device 20 outside the CMP facility 10 to measure whether the film quality of the wafer on which the CMP process is completed is polished as intended by the operator. By measuring the dispersion deviation, it is possible to determine whether there is a movement to the next process.
그러나 이 계측장치(20)는 CMP 설비의 외부에 위치하고 있어 CMP 공정의 초반 또는 중반부터 나타난 웨이퍼의 이상막질을 측정하기는 어려워 불필요한 시간 또는 공정을 진행하게 되는 문제점이 발생한다.However, since the measuring device 20 is located outside the CMP facility, it is difficult to measure the abnormal film quality of the wafer that appeared from the beginning or the middle of the CMP process, which causes unnecessary time or process.
상술한 문제점을 해결하기 위한 본 발명은 CMP 공정 중에 웨이퍼의 연마상태를 측정할 수 있도록 하는 장치를 구비한 CMP 설비를 제공함에 있다.The present invention for solving the above problems is to provide a CMP facility having an apparatus for measuring the polishing state of the wafer during the CMP process.
도 1은 종래의 CMP 설비에 대한 블록도이다.1 is a block diagram of a conventional CMP facility.
도 2는 본 발명에 따른 설비내 계측 장치가 구비된 CMP 설비에 대한 블록도이다.2 is a block diagram of a CMP facility equipped with an in-plant measurement device according to the present invention.
도 3은 본 발명에 따른 CMP 설비에 의해 수행되는 CMP 공정을 도시한 순서도이다.3 is a flowchart illustrating a CMP process performed by a CMP facility according to the present invention.
상술한 문제점을 해결하기 위한 본 발명은 웨이퍼에 형성된 막질을 연마하는연마공정을 수행하는 메인 폴리셔와; 연마공정이 완료된 웨이퍼를 세정하는 세정장치와; 상술한 CMP 공정의 전반적인 동작을 제어하는 제어기를 구비한 CMP 설비에 있어서: 상기 메인 폴리셔에서 연마공정이 완료된 웨이퍼의 막질을 측정하는 설비내 계측 장치를 구비한다. 또, 본 발명은 웨이퍼가 CMP 설비로 투입되는 제1 단계; CMP 설비의 메인 폴리셔로 이동하여 연마공정을 수행하는 제2 단계; 웨이퍼의 연마된 막질을 측정하여 연마목표치 대로 연마되었는 지를 판단하는 제3 단계; 상기 제3 단계에서 연마되었다고 판단되면 웨이퍼를 세정장치로 이동하여 세정하여 CMP 공정을 완료하고, 상기 제3 단계에서 연마되지 않았다고 판단되면 웨이퍼의 연마된 막질이 연마목표치 이상인지 이하인지를 판단하는 제4 단계; 상기 제4 단계에서 웨이퍼의 연마된 막질이 연마목표치 이상이면 CMP 설비외부로 유출시켜 상기 웨이퍼를 폐기하고, 상기 제4 단계에서 웨이퍼의 연마된 막질이 연마목표치 이하이면 다시 메일 폴리셔로 이동하여 연마목표치에 도달하도록 연마하는 제5 단계로 이루어진다.The present invention for solving the above problems and the main polisher for performing a polishing process for polishing the film quality formed on the wafer; A cleaning device for cleaning the wafer on which the polishing process is completed; A CMP facility having a controller for controlling the overall operation of the above-described CMP process, comprising: an in-plant metrology apparatus for measuring a film quality of a wafer on which a polishing process is completed in the main polisher. In addition, the present invention the first step of the wafer is introduced into the CMP facility; A second step of moving to the main polisher of the CMP apparatus and performing a polishing process; A third step of determining whether the wafer is polished according to the polishing target value by measuring the polished film quality of the wafer; If it is determined that the polishing is performed in the third step, the wafer is moved to a cleaning apparatus to clean the wafer to complete the CMP process. If it is determined that the polishing is not performed in the third step, it is determined whether the polished film quality of the wafer is greater than or equal to the polishing target value. 4 steps; If the polished film quality of the wafer in the fourth step is greater than the polishing target value, the wafer is discharged outside the CMP facility to discard the wafer. If the polished film quality of the wafer is less than the polishing target value in the fourth step, the wafer is moved back to the mail polisher and polished. And a fifth step of polishing to reach the target value.
본 발명에 따른 설비내 계측 장치가 구비된 CMP 설비에 대한 블록도를 도 2에 도시하고 있는 데 이를 설명하면 다음과 같다.A block diagram of a CMP facility equipped with an in-measuring measurement apparatus according to the present invention is shown in FIG. 2.
본 발명의 CMP공정을 수행하는 CMP 설비(30)는 메인 폴리셔(Main polisher : 32), 세정장치(34), 제어기(36), 설비내 계측장치(In line metrology : 38)를 구비하고 있다.The CMP facility 30 performing the CMP process of the present invention includes a main polisher 32, a cleaning device 34, a controller 36, and an in-line metrology device 38. .
우선, 상기 메인 폴리셔(32)는 회전하는 정반 위에 연마포가 부착된 정반 조립체와, 정반 조립체의 상부에서 상하 이동되며 회전하는 연마헤드의 저면에 웨이퍼를 진공흡착하기 위한 헤드가 설치된 연마 헤드 조립체와, 정반조립체의 연마포 위에 연마제를 공급하기 위한 슬러리 공급수단 등으로 구성되어 CMP 설비에 구비되고, 상기 세정장치(34)는 상기 메인 폴리셔(32)에서 연마공정이 완료된 웨이퍼를 세정하기 위해 CMP 설비(30)에 구비되어 있고, 상기 제어기(36)는 상기 CMP 공정의 전반적인 동작을 제어하기 위해 CMP 설비(30)에 구비되어 있다.First, the main polisher 32 includes a surface assembly having a polishing cloth attached to a rotating surface plate, and a polishing head assembly provided with a head for vacuum suctioning wafers on a bottom surface of the rotating polishing head, which is moved up and down at the top of the surface assembly. And a slurry supply means for supplying an abrasive on the polishing cloth of the surface assembly, and is provided in the CMP facility, and the cleaning device 34 is used to clean the wafer on which the polishing process is completed in the main polisher 32. It is provided in the CMP facility 30, the controller 36 is provided in the CMP facility 30 to control the overall operation of the CMP process.
또, 본 발명은 CMP 설비(30)의 내부에 계측장치(Metrology tool : 38)가 더 구비되어 있는데, 이는 메인 폴리셔(32)에서의 연마공정이 완료된 웨이퍼가 유입되어 웨이퍼의 각 지점별 막질의 산포편차를 측정하여 작업자가 지정한 연마목표치 대로 연마되어 있는 지를 측정하는 계측장치이다.In addition, the present invention is further provided with a measurement tool (Metrology tool: 38) in the interior of the CMP facility 30, which is a wafer in which the polishing process is completed in the main polisher 32 is introduced into the film quality of each point of the wafer It is a measuring device that measures the dispersion deviation of and measures whether it is polished according to the polishing target value specified by the operator.
이와 같이 구성된 본 발명에 따른 CMP 설비에 의해 수행되는 CMP 공정을 도시한 순서도는 도 3에 도시되어 있는 데 이를 설명하면 다음과 같다.A flowchart illustrating a CMP process performed by the CMP apparatus according to the present invention configured as described above is illustrated in FIG. 3.
우선, CMP 공정을 수행하기 위해 웨이퍼가 CMP 설비(30)로 투입되는 단계이다.(S2) 이 단계 S2는 CMP 공정의 이전공정에서 막질을 형성한 웨이퍼가 CMP 공정을 수행하기 위해 CMP 설비(30)로 유입되는 단계이다.First, the wafer is introduced into the CMP facility 30 to perform the CMP process. (S2) In this step S2, the wafer having the film quality in the previous process of the CMP process is performed by the CMP facility 30 to perform the CMP process. ) Is the stage of inflow.
다음으로 CMP 설비(30)의 메인 폴리셔(32)로 이동하여 연마공정을 수행하는 단계이다.(S4) 이 단계 S4는 작업자가 제어기(36)에 지정한 연마목표치 대로 웨이퍼에 형성된 막질을 연마하는 단계이다.Next, the process moves to the main polisher 32 of the CMP facility 30 to perform the polishing process. (S4) In this step S4, the operator polishes the film formed on the wafer according to the polishing target value specified by the controller 36. Step.
이어서, 웨이퍼의 연마된 막질을 측정하여 연마목표치 대로 연마되었는 지를 판단하는 단계를 수행한다.(S6) 이 단계 S6은 메인 폴리셔(32)에서 웨이퍼의 연마공정을 완료하면 이 웨이퍼는 설비내 메트롤루지 툴(38)로 유출하고 이 설비내 계측장치(38)는 웨이퍼의 연마된 막질을 측정하여 작업자에 의해 상기 제어기(36)에 지정된 연마목표치대로 연마되었는 지를 판단하는 단계이다.Subsequently, the polished film quality of the wafer is measured to determine whether the wafer is polished according to the polishing target value. (S6) In step S6, when the polishing process of the wafer is completed in the main polisher 32, the wafer is processed in the facility. It flows out to the trolley tool 38, and the measuring device 38 in this facility measures the polished film quality of the wafer and judges whether it was polished by the operator to the polishing target value specified in the controller 36.
이 단계 S6에서 연마목표치 대로 연마되었다고 판단되면 세정장치(34)로 이동하여 세정하는 단계(S8)를 수행한다.If it is determined in the step S6 that the polishing target value is polished, the process moves to the cleaning device 34 to perform the step S8 of cleaning.
이 단계 S6에서 연마목표치 대로 연마되었다고 판단되지 않으면 웨이퍼의 연마된 막질이 연마목표치 이상인지 이하인지를 판단하는 단계(S10)를 수행한다. 이 S10단계에서는 웨이퍼의 연마된 막질이 연마목표치 이상인지 이하인지를 판단하여 웨이퍼의 폐기여부를 결정하기 위한 단계이다.If it is determined in the step S6 that the polishing target value has been polished, a step S10 of determining whether the polished film quality of the wafer is equal to or greater than the polishing target value is performed. In step S10, it is a step for determining whether the wafer is discarded by determining whether the polished film quality of the wafer is equal to or greater than the polishing target value.
즉, 이 S10 단계에서 웨이퍼의 연마된 막질이 연마목표치 이상인지가 판단되면 더 이상의 공정을 진행하기가 불가능하므로 이 웨이퍼를 폐기하는 단계(S12)이다.That is, if it is determined in step S10 whether the polished film quality of the wafer is equal to or greater than the polishing target value, further processing is impossible, and thus the wafer is discarded (S12).
이 S10 단계에서 웨이퍼의 연마된 막질이 연마목표치 이하인지가 판단되면 상기 메인 폴리셔(32)에 이동하여 작업자가 지정한 연마목표치에 도달하도록 더 연마되도록 하기 위해 S4 단계(S4)로 이동한다.If it is determined in step S10 whether the polished film quality of the wafer is equal to or lower than the polishing target value, the process moves to the main polisher 32 to move to S4 step S4 so as to further polish to reach the polishing target value specified by the operator.
이와 같이 설비내 메트롤루지 툴을 CMP 설비 내부에 구비함으로써 CMP 공정이 마무리되어 CMP 설비외부로 유출되기 전에 웨이퍼의 연마상태를 측정할 수 있어 불필요한 시간 및 공정을 줄일 수 있다.Thus, by providing the metrology tool in the facility inside the CMP facility, the polishing state of the wafer can be measured before the CMP process is finished and flowed out of the CMP facility, thereby reducing unnecessary time and process.
이상에서 살펴본 것과 같이 본 발명은 계측장치를 CMP 설비 내부에 구비함으로써 CMP 공정이 마무리되어 CMP 설비외부로 유출되기 전에 웨이퍼의 연마상태를 측정할 수 있어 불필요한 시간 및 공정을 줄일 수 있는 효과가 있다.As described above, the present invention can measure the polishing state of the wafer before the CMP process is finished and flows out of the CMP facility by providing the measuring device inside the CMP facility, thereby reducing unnecessary time and processes.
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| KR1020020038190A KR20040003475A (en) | 2002-07-03 | 2002-07-03 | Method and device of In - line metrology in CMP |
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