KR200398880Y1 - Dual gas faceplate for a showerhead in a semiconductor wafer processing system - Google Patents

Abstract

A faceplate for a showerhead of a semiconductor wafer processing system is provided. The faceplate has a plurality of gas passages to supply a plurality of unmixed gases to the treatment region before the gas reaches the treatment region in the reaction chamber. The showerhead has a faceplate and a gas distribution manifold assembly. The showerhead defines a plurality of first gas holes that carry the first gas from the manifold assembly through the faceplate to the processing area, and the columnar platen receives the second gas holes from the manifold assembly. It forms a number of channels that connect over. The faceplate and manifold assembly are each made generally of a solid nickel component.

Description

DUAL GAS FACEPLATE FOR A SHOWERHEAD IN A SEMICONDUCTOR WAFER PROCESSING SYSTEM}

The present invention relates to a semiconductor wafer processing system, and more particularly to a gas distribution showerhead for supplying at least two process gases to a reaction chamber of a semiconductor wafer processing system.

The semiconductor wafer processing system generally includes a processing chamber having a pedestal for supporting the semiconductor wafer in a chamber near the processing area. In part, the chamber forms a vacuum seal that forms a treatment region. The gas distribution assembly or showerhead supplies one or more process gases to the process region. The gas is then heated and / or energized to form a plasma that performs a particular treatment on the wafer. Such treatment may include Chemical Vapor Deposition (CVD), which deposits a film on the wafer, or an etch reaction to remove material from the wafer.

In such processes where multiple gases are required, the gases are generally combined in a mixing chamber and connected to the showerhead through conduits. For example, in titanium nitride deposition using titanium tetrachloride (TiCl ₄ ) and ammonia (NH ₃ ) as process gases, two process gases are supplied to the mixing chamber along with respective carrier gases such as helium and hydrogen. Combined to form a gas mixture. The gas mixture is then connected through a conduit to a distribution plate comprising a plurality of holes, with the result that the gas mixture is evenly distributed in the treatment area. As the gas mixture enters the treatment zone and the energy is injected, a chemical reaction occurs between the titanium tetrachloride and ammonia, with the result that the titanium chloride chemically reacts with the ammonia to produce titanium nitride (ie NH ₃ TiCl ₄ decreases). The titanium nitride is deposited on the wafer by chemical vapor deposition.

Two heterogeneous gaseous chemical vapor deposition reactions include: thermal decomposition of tetradiethylaminotitanium (TDEAT) in combination with ammonia to produce titanium nitride; Thermal decomposition of tetradimethylaminotitanium (TDMAT) in combination with ammonia or a nitrogen-hydrogen mixture to produce titanium nitride; Or reducing tungsten hexafluoride (WF ₆ ) with hydrogen (H ₂ ) to produce tungsten. In any of the above cases and in other cases where two or more gases are needed to process the wafer, multiple gases need to be supplied uniformly to the processing region.

Although it is generally desirable to mix the gases prior to releasing them into the treatment region to ensure that the gases are uniformly distributed within the treatment region, the gas tends to begin to decrease or otherwise react in the mixing chamber. As a result, etching or deposition of the mixing chamber, conduits and other chamber components may occur before the gas mixture reaches the processing region. In addition, reactants by production may accumulate in the chamber gas delivery components.

In an attempt to maintain the gases in a separate passage until the gases are discharged from the distribution plate to the treatment area, U.S. Patent No. 5,595,606, issued January 21, 1997 (hereinafter referred to as "'606 patent") is multiple Disclosed is a multiple block stack, which forms a showerhead in which two gases are maintained in separate passages until they are discharged from the distribution plate to the processing area. As such, the gases do not mix or interact with each other until they reach the processing region near the wafer.

14 shows a cross-sectional view of a prior art showerhead 50 of the '606 patent. The showerhead 50 includes an upper block 58, an intermediate block 60, and a lower block 62. The showerhead 50 has a first set of gas passages 54a, 54b, 54c (collectively the passage 54) and a second set of gas passages 52a, 52b, and 52c (collectively the passage 52). . The passages 52, 54 branch from the upper block 58 to the lower block 62 in a manner that maintains the passage independently. Gas is supplied to passage 52 through port 64 and to passage 54 through port 72. The passages 52 and 54 diverge using manifolds 80 and 82 formed in the intermediate block 60. In particular, passage 52 branches through manifold 80 and passage 54 branches through manifold 82.

Coolant channel 84 is supplied into lower block 62 near gas outlet 78 to cool gas outlet 78. In this way, the showerhead 50 is maintained below the liquefaction temperature of the process gas, for example below 40 ° C. for TDEAT.

Blocks 58, 60, and 62 are stacked on top of each other, with O-rings 90 between blocks 58, 60, and 62 in an attempt to seal gases within showerhead 50. Is placed on. These O-rings 90 are effective at ensuring that gas does not leak out of the showerhead, while the gas leaks in the showerhead due to leakage between the gas passages 52 and 54 at the interface of the various blocks. There is little effect on ensuring mixing. This mixing does not achieve the purpose of the dual gas passage assembly, ie the gases are not completely separated until they exit the lower block 62 into the treatment area. In addition, the presence of the O-ring in the processing chamber leads to the possibility that the O-ring material may collapse and contaminate or worsen the chamber surface.

U.S. Patent No. 6,086,677 published in 2000 by Umotoy et al. Provided a faceplate, which was made of aluminum and nickel plated to a depth of 0.2 to 0.4 mils. Nickel plating in the various channels and cavities of the faceplate is expensive. In addition, nickel plated structures may be degraded at higher processing temperatures. For example, nickel plating begins to suffer performance degradation at processing temperatures higher than about 340 ° C. In some chemical vapor deposition steps, the treatment zone occurs at a temperature of about 375 ° C. or higher.

Thus, there is a need for a showerhead that delivers gases into the treatment area without mixing them before at least two gases reach the treatment area. In addition, the showerhead arrangement need not require a sealed elastomer or a smooth O-ring in the showerhead. In addition, dual gas faceplates made of solid nickel components need to withstand treatment at temperatures above 340 ° C.

Certain disadvantages associated with the prior art are overcome by showerheads and faceplates for semiconductor wafer processing systems disclosed herein. In at least one embodiment, a faceplate for a semiconductor wafer processing system is provided. The faceplate includes a first gas distribution plate connected to the second gas distribution plate. Both the first gas distribution plate and the second gas distribution plate are made of a solid nickel component. The first gas distribution plate and the second gas distribution plate each comprise a plurality of first holes, which extend in a manner aligned through the respective plates. The second gas distribution plate also includes second holes formed through the bottom thereof and a plurality of interconnecting channels formed within the top thereof. The interconnect channels are located above the plurality of second holes. The first gas distribution plate has a concave bottom surface that forms the columnar cavity when the first gas distribution plate is connected with the second gas distribution plate. The interconnect channels of the second gas distribution plate are in fluid communication with the plurality of second holes and the cylindrical cavity to form a first flow path that is isolated from the second flow path formed by the plurality of first holes and penetrates the faceplate. do.

In at least one embodiment, a showerhead for a semiconductor wafer processing system is provided. The showerhead includes a gas distribution manifold assembly coupled to the faceplate for supplying the first gas to the first gas holes in the first gas distribution plate and for supplying the second gas to the channels in the second gas distribution plate. . The faceplate includes a first gas distribution plate connected to the second gas distribution plate. Both the first gas distribution plate and the second gas distribution plate are made of a solid nickel component. The first gas distribution plate and the second gas distribution plate each include a plurality of first holes extending in an aligned manner through all of the respective distribution plates. The second gas distribution plate also includes a plurality of second holes formed through the bottom thereof and a plurality of interconnecting channels formed therein. The interconnect channels are located above the plurality of second holes. The first gas distribution plate has a concave bottom surface that forms the columnar cavity when the first gas distribution plate is connected with the second gas distribution plate. The interconnect channels of the second gas distribution plate are in fluid communication with the plurality of second holes and the cylindrical cavity to form a first flow path that is isolated from the second flow path formed by the plurality of first holes and penetrates the faceplate. do.

In another embodiment, the showerhead includes a gas distribution manifold assembly connected to a faceplate having a lower gas distribution plate and an upper gas distribution plate. Each lower gas distribution plate and the upper gas distribution plate are made of a solid nickel component. The faceplate includes a plurality of first gas holes extending in a manner aligned through both the lower gas distribution plate and the upper gas distribution plate. The plurality of second gas holes extend through the lower gas distribution plate in the plurality of interconnect channels. The interconnect channels are connected to a columnar plenum connected to a plurality of third gas holes extending through the upper gas distribution plate. The gas distribution manifold assembly supplies a first gas to the first gas holes in the upper gas distribution plate, and supplies a second gas to the interconnection channels and the third gas holes in the lower gas distribution plate.

The concept of the present invention can be more easily understood through the following description associated with the accompanying drawings.

1 shows a schematic cross-sectional view of an exemplary semiconductor wafer processing reaction chamber 100 utilizing the showerhead 114 of the present invention. Chamber 100 forms a processing region 104, which may be utilized to deposit material onto the wafer surface or to etch material from the wafer. A substrate 106, such as a semiconductor wafer, is held close to the processing region 104 and supported on the top surface of the pedestal 108. Pedestal 108 moves vertically within chamber 100 (as indicated by arrow 110) to lower the pedestal to a position that allows substrate 106 to be removed through slit valve 112. In this lower position a new substrate 106 can be placed on the pedestal 108. The pedestal 108 then rises into the processing position as shown, positioning the wafer 106 proximate the processing region 104. Process gases are supplied through the showerhead 114. In a preferred embodiment of the present invention, a plurality of gases are used to process the wafer, and illustratively process gas 1 (eg, titanium tetrachloride ₄ ) and process gas 2 (eg, ammonia NH ₃ ). Two gases are used. These gases form the gas mixture needed to process the wafer, i.e. form a deposition on the wafer or chemically etch the wafer. Process gases from respective sources 116 and 118 are supplied to conduits 124 and 126 that travel through walls 128 of chamber 100 through respective valves 120 and 122 to provide a showerhead ( 114). The showerhead 114 forms a lid of the chamber 100.

Showerhead 114 includes a faceplate 130 and a gas distribution manifold 132. Gas distribution manifold 132 has two conduits 134 and 136 connected to conduits 124 and 126, respectively, which deliver gases through chamber wall 128. At the interface 138 between the wall 128 of the chamber 100 and the showerhead 114, the conduits are effectively sealed using O-rings 140 and 142 that surround the conduits 124 and 126, respectively. The first processing gas is supplied to the cylindrical chamber 144 via a conduit 134, which distributes the first processing gas to the faceplate 130. The second process gas is supplied to the annular chamber 146 via the conduit 136, which distributes the second process gas to the faceplate 130.

The faceplate 130 supplies a plurality of unmixed gases to the treatment region 104 prior to reaching the treatment region 104 including a plurality of gas passages. In one or more embodiments, faceplate 130 includes a lower gas distribution plate 148 and an upper gas distribution plate 150. The two distribution plates 148, 150 each comprise various channels and holes that form distinct passages for the two processing gases to enter the processing region 104. A specific arrangement of channels and holes is described in detail with reference to FIGS. 3, 4, and 5 for the lower gas distribution plate 148, and FIGS. 6, 7 for the upper gas distribution plate 150. And in detail with reference to FIG. 8. To form channels that do not use O-rings as a seal between the channels and the holes, the lower gas distribution plate and the upper gas distribution plates 148 and 150 are fused together to form a single faceplate 130. The faceplate 130 is preferably bolted to the gas distribution manifold 132 (using a number of bolts 152). The surfaces of faceplate 130 mating with manifold 132 each have a flatness of 1 to 3 mm. As such, these components can be bolted together without the use of an O-ring and a sufficient seal is created to prevent gas mixing. Faceplate 130 and manifold assembly 132 are made of solid nickel metal that can withstand temperatures above 340 ° C., for example a solid Ni 200 series material.

2 shows a top view of the lower gas distribution plate 148. 3 shows a partial cross-sectional view of the lower gas distribution plate 148 taken along line 3-3 of FIG. FIG. 4 shows a detailed top view of a portion of the lower gas distribution plate 148 shown in FIG. 2. FIG. 5 shows a detailed cross-sectional view taken along line 5-5 of FIG. To better understand the disclosure of the bottom gas distribution plate 148, reference should be made simultaneously to FIGS. 2, 3, 4, and 5.

2 to 5, the lower gas distribution plate 148 is in the form of a circle or a disk on a plan view. Bottom plate 148 has a central portal region 200 and a cylindrical flange 202. Preferably, the flange 202 has a thickness of about 2.5 mm, and the central portal area 200 has a thickness of about 1.21 cm. The central region 200 is formed by the width of the flange 202, which is about 2.54 cm. The central portal area 200 includes two sets of holes 204 and 206. Each of the holes 204 and 206 has a space of about 6.35 mm from the adjacent hole to the center. In general, the holes for the first gas 206 (eg, holes for TiCl _{4 which} are 0.025 inches) are about the same size as the holes for the second gas 204 (eg, holes for NH ₃ ). Size.

Preferably, there are about 700 holes 204 and 206 to withdraw respective gases from the lower gas distribution plate 148. However, the choice of hole size and number of holes for each gas is a matter of choice of designer depending on the processing conditions. In this regard, the size of the hole will vary by gas flow rate, gas pressure, gas type, chamber pressure, and the like. In addition, the hole size may vary along the surface of the faceplate such that the gas flow rate through the holes is correlated with the position of the hole in the faceplate 130.

The first gas holes 206 extend through the central portal area 200 and are counterbore with the holes 210. Alternatively, the holes 208 and 210 can be drilled after the two dispensing surfaces 148 and 150 are brazed. The central portal area 200 is cut to form grooves or channels 208 having a width of 3.173 mm and a depth of 9.525 mm. Channels 208 are formed (as shown by line 201) at a 45 ° angle from the horizontal and are arranged beyond the holes 204. The channels 208 are cut in a "cross" pattern, and the open tops of the channels 208 are covered to form a gas manifold for the second gas. As a result, a rectangular protrusion 212 (shown in FIG. 4) remains around the holes 206 after the channel 208 is formed. Square patterns (i.e. four sides of equal length and four right angles) are easier to machine than diamond-shaped island patterns (i.e. four sides of equal length and obtuse angles). It leaves less burr compared to cutting into molds.

6 shows a top view of the upper gas distribution plate 150. FIG. 7 provides a cross-sectional view of the distribution plate 150 taken along line 7-7 of FIG. 6. FIG. 8 shows an expanded cross sectional view of a portion of the distribution plate 150 shown in FIG. 7. 6 to 8, the upper gas distribution plate 150 has an outer edge (flange support 600) that abuts the flange 202 of the lower gas distribution plate 148 during assembly. At the center of the upper gas distribution plate 150 is a concave portion 602. The concave portion 602 generally corresponds to the raised central portal area 200 of the lower gas distribution plate 148 such that the upper distribution plate 150 and the lower distribution plate 148 are aligned with each other. The upper distribution plate 150 includes a plurality of holes 604 located centrally and now about 1.6 mm, which are aligned with the first gas bores 210 of the lower gas distribution plate 148. In addition, adjacent to the edge of the upper gas distribution plate 150, but inside the flange support 600, there are a number of holes 606 used to distribute the gas to the channels 208 in the lower gas distribution plate 148. have. Within the upper gas distribution plate 150 there are about 700 holes correspondingly to the arrangement of the first gas holes 206 and the associated counterbore 210 in the lower gas distribution plate 148. The gas distribution holes 606 that provide gas to the channels 208 of the lower gas distribution plate 148 are arranged around the circumference of the upper gas distribution plate 150 to allow eight holes each having a diameter of about 6.35 mm. have.

9 shows an assembled view of a portion of faceplate 130. In order to assemble the faceplate 130, the surfaces of the lower gas distribution plate 148 and the upper gas distribution plate 150 should be constant within 1 to 3 mm. Adjacent faces can be coated with silicon-rich aluminum to fuse the nickel plate. The lower gas distribution plate 148 and the upper gas distribution plate 150 are then clamped to each other and the assembly is located in a furnace where the gas distribution plates 148 and 150 are fused together. In this way, the two plates form only one (ie single) member, namely faceplate 130. Alternatively, each gas distribution plate 148, 150 is made of a solid nickel component and then fused together by soldering. In each case, no O-rings are needed to keep the gas in the faceplate 130 or to maintain separation of the gas.

The lower distribution plate 148 and the upper distribution plate 150 are fused at the connection of the flange 202 and the flange support 600. In detail, the flange 202 and the flange support 600 are fused at the outer edge 902 to form a seal sufficient to hold all the gases in the faceplate 130. In addition, the flange 202 of the upper gas distribution plate 150 and the lower gas distribution plate 148 may have a columnar plenum providing gas to the gas channels 208 formed in the lower gas distribution plate 148. And form 900. The holes 606 supply gas to the columnar plenum 900. The upper gas distribution plate 150 forms the top surface of the channel 208 such that the channels 208 of uniform rectangular cross section distribute the second process gas to the holes 204 in the lower gas distribution plate 148. do. The holes 604 in the upper gas distribution plate 150 are aligned with the holes 210 in the lower gas distribution plate 148 (see FIG. 5) so that the first process gas does not interfere with the distribution plates 148 and 150. It passes through to reach the treatment region 104 of the chamber 102. Once fused, a number of stationary bores 904 (not grooved) such that the bolt head (not shown) remains flush with the faceplate surface are formed in the circumferential edge region 902 to gasify the faceplate 130. It is easy to add to the distribution manifold 132.

Considering the gas distribution manifold 132 in more detail, FIG. 10 shows a top view of the gas distribution manifold 132. FIG. 11 shows a cross-sectional view of the gas distribution manifold 132 taken along line 11-11 of FIG. 10. FIG. 12 shows a bottom plan view of the gas distribution manifold 132 shown in FIG. 10. With reference to FIGS. 10-12, gas distribution manifold 132 provides respective process gases to faceplate 130 from conduits 124 and 126 (shown in FIG. 1). Manifold 132 includes three components, the bottom plate 1000, the middle plate 1002 and the top plate 1004. The bottom plate 1000 includes a first cylindrical cavity 1006 that is the same or nearly the same as the diameter of the faceplate 130. The first cavity 1006 is designed to mate with the faceplate 130. The second cavity 1008 is coaxial with the first cavity 1006 but has a smaller diameter, so that when the faceplate 130 is adjacent to the manifold 132 by being fixed within the first cavity 1006, the chamber 144 is formed. Chamber 144 distributes the first process gas to holes 604 in upper gas distribution plate 150. A centrally located bore 1010 connects the chamber 144 to the conduit 134, which extends from the central bore 1010 to a position adjacent to the edge of the top plate 1004. In this position, conduit 134 is connected to conduit 124 of chamber wall 102. To form the conduit 134, the top plate 1004 has a machined channel in its bottom surface through which gas will flow. The channel is completed by fixing the top plate 1004 to the midplane 1002, with the result that the top of the midplane 1002 forms the bottom surface of the channel 134.

An annular chamber 146 is formed in the manifold 132 to connect the second process gas from the walls 128 and conduits 126 of the chamber 100 to the faceplate 130. The annular chamber 146 is formed by machining the annular channel 146 on the upper surface of the lower plate 1000. Radial channels 1012 connect the annular channel 146 to the bore 1014 at the distal end of each channel 1012. In addition, the channels forming the conduit 136 are formed in the bottom plate 1000 and extend from the annular channel 146 to the conduit connection position of the interface 138. Above the annular channel 146 is adjacent to the midplane 1002, resulting in a channel 1012 in which the adjacent annular channel 146 extends radially and a second processing gas for dispensing the plenum of the faceplate 130. And with a bore 1014 connecting to 900.

To manufacture the gas distribution manifold assembly 132, the bottom plate 1000, midplane 1002, and top plate 1004 may have mating-surfaces coated with a silicon-enriched aluminum film. Alternatively, each bottom plate 1000, middle plate 1002, and top plate 1004 are made of a solid Ni 200 series material. The entire manifold assembly 132 is then clamped and placed in a furnace at a temperature of about 550 ° C. such that the contact surfaces are fused together to form a single manifold assembly 132. As such, no O-rings are needed to maintain the distribution between the process gases. The showerhead 114 of the previous embodiments was tested as a 10 ^-5 Torr vacuum test, and no mixing or cross contamination occurred between the gases provided from each of the gas input conduits 134 and 136.

In any of the embodiments described above or disclosed herein, the showerhead 114 can be connected with a cold plate or other cooling component that can maintain the showerhead 114 at a uniform and constant temperature. Such cold plates may be formed by cutting the cooling channels or using otherwise formed bodies, such that coolant is circulated through the cold plates while the cold plates are secured above the gas distribution manifold 132. An exemplary position of cold plate 1100 secured on top of manifold assembly 132 is shown in FIG. 11.

13 shows a cross-sectional view of a portion of an alternative embodiment of faceplate 1300. The embodiment includes an upper gas distribution plate 1302 and a lower gas distribution plate 1304. The lower gas distribution plate 1304 is similar to the lower gas distribution plate (148 in FIG. 9) described above, such that the distribution plate 1304 forms a plurality of gas distribution holes (a set of holes 1306 To distribute the first gas, and the set of holes 1308 to distribute the second gas). All other holes are counterbored from the top surface 1310 of the lower distribution plate 1304. At each counterbore is the end of the tubular conduit (tube) 1312 in the vertical direction. The other end of each tube 1312 passes through a hole 1320 in the upper gas distribution plate 1302. The upper gas distribution plate 1302, the lower gas distribution plate 1304, and the tube 1312 are again made of solid nickel. Once assembled, the faceplates 1300 are placed in a furnace and heated to solder each other (fusion) to the contact surfaces in a manner similar to that described in the above embodiments.

Each tube 1312 forms a gas passageway such that a second gas reaches the gas distribution hole 1308. The lower surface 1314 of the upper gas distribution plate 1302 and the upper surface 1310 of the lower gas distribution plate 1304 form a cavity 1316 for distributing the first gas to the gas distribution hole 1306. The first gas is supplied to the cavity 1316 via one or more portals 1318. A gas manifold (not shown, same as manifold assembly 132 of FIG. 1) is connected to faceplate 1300, supplies a first gas to portal 1318 and a second gas to faceplate 1300. To the tube 1312. The fixing and actuation of the showerhead comprising this embodiment of the faceplate is the same as in the previous embodiment.

An alternative fabrication process of the embodiments described above or disclosed herein involves stacking die-cut layers (each layer about 5 mils thick) to "build" the faceplate structure. The laminate or stack of layers is then placed in the furnace and fused into a single faceplate. The material of the faceplate is solid nickel. Notwithstanding the various embodiments in accordance with the inventive concepts disclosed and shown herein, one of ordinary skill in the art can still devise many different embodiments that include and follow the subject innovation and employ the inventive concepts.

In at least one specific embodiment, the showerhead has a single faceplate and gas distribution manifold assembly. The faceplates are made of separate upper and lower gas distribution plates and are soldered or fused together to form a single faceplate. Each distribution plate is made of a solid nickel material, such as a solid Ni 200 series material. The process gas is transported separately to the various channels in the faceplate by the gas distribution manifold assembly. The gas distribution manifold assembly is bolted to the back or top of the upper gas distribution plate. Optionally, the cold plate may be bolted to the gas distribution manifold assembly to maintain the showerhead at a predetermined temperature.

In one or more embodiments described above or disclosed herein, each top gas distribution plate and bottom gas distribution plate comprise a plurality of first gas holes extending in a manner aligned through both the bottom plate and the top plate. . The upper gas distribution plate of the faceplate includes a chamber for supplying gas to the plurality of first gas holes. The first process gas is supplied through a plurality of holes in the upper chamber. The first gas holes distribute the first gas to the processing region. As noted, the lower gas distribution plate likewise comprises a plurality of holes aligned with the holes in the upper gas distribution plate. The lower gas distribution plate is disposed below the top plate. In this way, the first processing gas is distributed to the processing region without mixing. In one arrangement, the lower gas distribution plate has a circular flat shape and the gas distribution holes are evenly distributed around the surface of the plate to distribute the gas more evenly to the treatment area.

In one or more embodiments described above or disclosed herein, a plurality of second gas holes are provided that extend through the lower gas distribution plate and are connected to the plurality of interconnect channels. The interconnect channels are connected to a columnar plenum containing a second process gas. The second gas holes are in fluid communication with the second process gas by the columnar plenum. The plurality of second gas holes and their interconnect channels are sealed for each of the plurality of first gas holes. In this way, fluid communication of the separated gases is excluded in the faceplate.

In one or more embodiments described above or disclosed herein, the bottom surface of the upper gas distribution plate is connected and fused to the top surface of the lower gas distribution plate. In this respect, the flat surface of the bottom of the upper gas distribution plate forms the top surface of the manifold channel carrying the second gas. The manifold channels are all interconnected by a columnar plenum located proximate to the outer edge of the lower gas distribution plate. Multiple holes are drilled into the columnar plenum around the edge of the upper gas distribution plate to provide gas to the columnar plenum. The gas connects manifold channels that supply gas to the second gas holes in the lower gas distribution plate.

In one or more embodiments described above or disclosed herein, the lower gas distribution plate and the upper gas distribution plate are fused to prevent the use of an O-ring in the faceplate. In one arrangement fusion is performed by first applying a 3 to 5 mil thick silicon-enriched aluminum film or film to the contact surface. The two gas distribution plates are then clamped to each other. The faceplate is then heated in a vacuum chamber to a temperature of about 550 ° C. In this way, the gas distribution plates are joined at the positions where the plates are in contact with each other. In other arrangements, each gas distribution plate is made of a solid Ni 200 series material. The soldered surfaces preferably have a flatness of 1 to 3 mm each, forming an approximate seal that maintains separation of gases as they change from the upper gas distribution plate to the lower gas distribution plate. Solid nickel plates are soldered to provide the desired contact seal.

While embodiments of the present invention have been disclosed above, other embodiments of the present invention can be devised without departing from the scope of the present invention, the scope of which is determined by the claims that follow.

1 shows a cross-sectional view schematically illustrating a semiconductor wafer processing reactor including a showerhead of the present invention.

2 shows a plan view of the lower gas distribution plate.

FIG. 3 shows a partial cross-sectional view of the lower gas distribution plate taken along line 3-3 of FIG. 2.

4 shows a detailed plan view of a portion of the lower gas distribution plate.

FIG. 5 shows a cross-sectional view of a detailed portion of the lower gas distribution plate taken along line 5-5 of FIG. 4.

6 shows a plan view of the upper gas distribution plate.

FIG. 7 shows a partial cross-sectional view of the upper gas distribution plate taken along line 7-7 of FIG. 6.

FIG. 8 shows an expanded cross sectional view of a portion of the upper gas distribution plate shown in FIG. 7.

Figure 9 shows a detailed cross-sectional view of the assembled portion of the lower gas distribution plate and the upper gas distribution plate forming the faceplate of the showerhead of the present invention.

10 shows a top view of a gas distribution manifold assembly.

FIG. 11 shows a cross-sectional view of the gas distribution manifold assembly taken along line 11-11 of FIG. 10.

12 shows a bottom plan view of the gas distribution manifold assembly.

13 shows a cross-sectional view of a portion of an alternative embodiment of the showerhead. And

14 shows an expanded cross sectional view of a dual gas showerhead of the prior art.

The same elements that are common in the drawings have been used to refer to the same reference numerals as much as possible to aid understanding.

Brief description of symbols for the main parts of the drawings

(Not shown): gas manifold 100: reactor

102: processing chamber 104: processing area

106: substrate 108: pedestal

110: arrow 112: slit valve

114: showerhead 116, 118: source

120, 122: valves 124, 126, 134, 136: conduits

128: chamber wall 130, 1300: faceplate

132: manifold assembly 134, 208, 1012: channel

138: interface 140, 142: O-ring

144: cylindrical chamber 146: annular chamber

148 and 1304 lower gas distribution plate 150 and 1302 upper gas distribution plate

152: bolt 200: center portal area

201: line 202: flange

204, 206, 210, 604, 606, 1320: holes 210, 904, 1010, 1014: bore

212 rectangular island 600 flange support

602: recessed portion 608: surface

900: distribution plenum 902: cylindrical edge area

1000: lower plate 1002: intermediate plate

1004: top plate 1006, 1316: cavity

1008: second cavity 1100: cold plate

1306, 1308: gas distribution hole 1310: upper surface

1312: tube 1314: lower surface

1318: Portal

Claims (23)

In the faceplate for a semiconductor wafer processing system, The faceplate comprises a first gas distribution plate connected to a second gas distribution plate, each of the distribution plates being made of a solid nickel component, The first gas distribution plate and the second gas distribution plate each include a plurality of first holes extending in a manner aligned through both the first gas distribution plate and the second gas distribution plate, The second gas distribution plate includes a plurality of second holes formed to penetrate the lower portion of the second gas distribution plate and a plurality of interconnecting channels formed above the second holes in an upper portion of the second gas distribution plate. And The first gas distribution plate has a concave bottom surface that forms a columnar cavity when the first gas distribution plate is connected to the second gas distribution plate, so that the interconnect channels of the second gas distribution plate are A semiconductor wafer, in fluid communication with the plurality of second holes and the cylindrical cavity to form a first flow path isolated from a second flow path formed by the plurality of first holes and penetrating the faceplate. Faceplates for Processing Systems. The method of claim 1, And wherein said interconnect channels in said second gas distribution plate are formed in a cross pattern. The method of claim 1, And the interconnect channels are cut to form rectangular protrusions in the top of the second gas distribution plate. The method of claim 1, The first gas distribution plate is connected to the second gas distribution plate by soldering the first gas distribution plate to the second gas distribution plate, wherein the faceplate for the semiconductor wafer processing system. The method of claim 4, wherein Wherein the plurality of first holes penetrating the first gas distribution plate and the second gas distribution plate are drilled after welding the first gas distribution plate and the second gas distribution plate together. Faceplates for Wafer Processing Systems. A showerhead for a semiconductor wafer processing system, The showerhead comprises a faceplate having a unitary structure made of a solid nickel component, The faceplate includes a first gas distribution plate and a second gas distribution plate, each of the first gas distribution plate and the second gas distribution plate passing through both the first gas distribution plate and the second gas distribution plate. Each of the plurality of first holes extending in an aligned manner, The second gas distribution plate includes a plurality of second holes formed to penetrate the lower portion of the second gas distribution plate and a plurality of interconnecting channels formed above the second holes in an upper portion of the second gas distribution plate. And The first gas distribution plate has a concave bottom surface that forms a columnar cavity when the first gas distribution plate is connected to the second gas distribution plate, so that the interconnect channels of the second gas distribution plate are And in fluid communication with the plurality of second holes and the cylindrical cavity to form a first flow path that is isolated from a second flow path formed by the plurality of first holes and penetrates the faceplate, and The showerhead is a gas distribution manifold assembly coupled to the faceplate to supply a first gas to the first holes in the first gas distribution plate and to supply a second gas to the channels in the second gas distribution plate. Comprising a showerhead for a semiconductor wafer processing system. The method of claim 6, And a cold plate secured to said gas distribution manifold assembly. The method of claim 6, Wherein said interconnect channels in said second gas distribution plate are formed in a cross-shaped pattern, wherein said interconnect channels are cut to form rectangular protrusions in an upper portion of said second gas distribution plate. . The method of claim 8, And the rectangular protrusions are formed in the first gas distribution plate and extend into the recessed cavity to form a flow path through the gas distribution cavity. The method of claim 6, The face plate is formed by soldering the first gas distribution plate to the second gas distribution plate, characterized in that the showerhead for a semiconductor wafer processing system. The method of claim 6, The gas distribution manifold further comprises a first gas channel in a cylindrical form for supplying the first gas to the plurality of first gas holes in the first gas distribution plate. The method of claim 11, The gas distribution manifold further comprises a second gas channel having an annular cavity and radial channels, the radial channels extending from the annular cavity supplying the second gas to the circumferential plenum. Shower head. A showerhead for a semiconductor wafer processing system, The showerhead comprises a faceplate having a lower gas distribution plate connected to the upper gas distribution plate, The lower gas distribution plate and the upper gas distribution plate are each made of a solid nickel component, and The faceplate extends into a plurality of first gas holes and a plurality of interconnecting channels through the lower gas distribution plate, the plurality of first gas holes extending in a manner aligned with both the lower gas distribution plate and the upper gas distribution plate. Having a plurality of second gas holes, the interconnect channels are connected to a columnar plenum connected to a plurality of bores extending to penetrate the upper gas distribution plate, and The showerhead is configured to supply a first gas to the plurality of first gas holes in the upper gas distribution plate and to supply a second gas to the plurality of bores and the interconnect channels in the lower gas distribution plate. A showerhead for a semiconductor wafer processing system comprising a gas distribution manifold assembly coupled to a faceplate. The method of claim 13, And the interconnect channels of the lower gas distribution plate are formed in a cross pattern. The method of claim 13, And the interconnect channels are cut to form rectangular protrusions in the top of the lower gas distribution plate. The method of claim 13, The face plate is formed by soldering the upper gas distribution plate to the lower gas distribution plate, the showerhead for a semiconductor wafer processing system. The method of claim 13, The gas distribution manifold, A first gas channel for supplying the first gas to the plurality of first gas holes of the upper gas distribution plate, and A second gas channel having an annular cavity and radial channels, the radial channels further comprising a second gas channel extending from the annular cavity supplying the second gas to the columnar plenum head. The method of claim 16, After the upper gas distribution plate and the lower gas distribution plate are soldered, the plurality of first gas holes penetrating the upper gas distribution plate and the lower gas distribution plate are drilled. head. The method of claim 13, Wherein the solid nickel component comprises a Ni 200 series material. The method of claim 16, Wherein a portion of the upper gas distribution plate is soldered to the upper surface of the rectangular protrusions of the lower gas distribution plate between the plurality of first gas holes formed to penetrate the upper gas distribution plate. Shower head. A faceplate formed of two nickel plates for delivering process gas into a processing region of a semiconductor wafer processing system, A first plate having a cylindrical cavity, and A plurality of first holes connected to a second plate having a plurality of second holes and a plurality of channels, The plurality of second holes are in communication with the plurality of first holes to define a first flow path, And wherein said plurality of channels are in communication with said columnar cavity to define a second flow path. The method of claim 21, The first flow path is suitable for delivering a first process gas, And wherein said second flow path is suitable for delivering a second processing gas. The method of claim 21, And the first plate and the second plate are connected to the gas manifold including a plurality of fixing holes fused together and formed therethrough.