KR20030096707A - Rinsing method of contact hole in semiconductor - Google Patents
Rinsing method of contact hole in semiconductor Download PDFInfo
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- KR20030096707A KR20030096707A KR1020020033709A KR20020033709A KR20030096707A KR 20030096707 A KR20030096707 A KR 20030096707A KR 1020020033709 A KR1020020033709 A KR 1020020033709A KR 20020033709 A KR20020033709 A KR 20020033709A KR 20030096707 A KR20030096707 A KR 20030096707A
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- contact hole
- solution
- cleaning
- metal
- polymer
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 229920000642 polymer Polymers 0.000 claims abstract description 46
- 238000004140 cleaning Methods 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 30
- 239000011229 interlayer Substances 0.000 claims abstract description 24
- 238000001312 dry etching Methods 0.000 claims abstract description 23
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 18
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 10
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004380 ashing Methods 0.000 claims abstract description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 5
- 230000008016 vaporization Effects 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 2
- 239000012498 ultrapure water Substances 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 36
- 239000006227 byproduct Substances 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
본 발명은 반도체 소자의 콘택홀 세정 방법에 관한 것으로서, 특히 건식 식각에 의한 콘택홀 내부의 경화성 폴리머 및 포토레지스트 잔류물을 동시에 제거할수 있는 반도체 소자의 콘택홀 세정 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning contact holes in semiconductor devices, and more particularly, to a method for cleaning contact holes in semiconductor devices capable of simultaneously removing the curable polymer and photoresist residues in the contact holes by dry etching.
종래의 반도체 소자 제조 공정에 있어서, 소자가 고집적화된 선 폭 0.25㎛ 이하의 반도체 소자 제조 공정에서는 소스/드레인이 0.08㎛ 이하의 얇은 PN 접합으로 형성된다. 따라서, 최소 콘택홀의 크기는 0.3㎛ 이하의 크기가 된다. 또한, 선 폭이 좁아질수록 더 얇고 작은 접합과 콘택홀이 요구되고 있다. 이와 같이 얇은 접합과 작은 콘택홀을 사용함에 따라 건식 식각에 의한 경화성 폴리머의 콘택홀 내 형성과 건식 식각에 따른 부산물에 의해 콘택 저항이 크게 증가되는 문제점이 야기된다.In the conventional semiconductor device manufacturing process, the source / drain is formed by a thin PN junction of 0.08 micrometer or less in the semiconductor device manufacturing process of the line width 0.25 micrometer or less in which the element was highly integrated. Therefore, the size of the minimum contact hole is 0.3 μm or less. In addition, the narrower the line width, the thinner and smaller bonding and contact holes are required. As a result of the use of thin junctions and small contact holes, a problem arises in that the contact resistance is greatly increased by the formation of the curable polymer by dry etching and by-products of the dry etching.
이하, 도면을 참조하여 종래 기술에 따른 반도체 소자의 콘택홀 세정 방법을 상세히 설명하기로 한다. 도 1 및 도 2는 일반적인 반도체 소자의 콘택홀 형성 공정을 나타낸 단면도이다.Hereinafter, a contact hole cleaning method of a semiconductor device according to the related art will be described in detail with reference to the accompanying drawings. 1 and 2 are cross-sectional views illustrating a process of forming a contact hole in a general semiconductor device.
먼저, 도 1에 도시한 바와 같이 반도체 기판(101)의 하부 도전막 예를 들면, 게이트 혹은 금속 배선(102) 상에 층간 절연막(103)이 형성된 후 상기 층간 절연막(103) 상에 콘택홀 형성 마스크로서 포토레지스트 패턴(108)이 형성된다. 상기 포토레지스트 패턴(108)을 마스크로 사용하여 상기 게이트 혹은 금속 배선(102)의 일부가 노출되도록 상기 층간 절연막(103)이 플라즈마를 이용한 건식 식각에 의해 식각되어 콘택홀(104)이 형성된다. 이 때, 플라즈마를 이용한 건식 식각의 진행에 따라 상기 콘택홀(104)의 하부에 상기 게이트 혹은 금속 배선과 반응하여 생성된 금속성 경화성 폴리머(106)가 건식 식각의 부산물로 형성되고, 상기 콘택홀 내부에 층간 절연막의 건식 식각 부산물인 폴리머(107)가 형성된다. 상기 층간 절연막(103)의 건식 식각 부산물인 폴리머(107)는 콘택홀 식각시 식각 장벽의 보호막 역할을 수행한다. 이어, 후속 공정으로 상기 포토레지스트 패턴(108)을 제거하는 애쉬(ashing) 공정 진행된다.First, as shown in FIG. 1, an interlayer insulating layer 103 is formed on a lower conductive layer of the semiconductor substrate 101, for example, a gate or a metal wire 102, and then contact holes are formed on the interlayer insulating layer 103. The photoresist pattern 108 is formed as a mask. Using the photoresist pattern 108 as a mask, the interlayer insulating layer 103 is etched by dry etching using plasma to expose a portion of the gate or metal wiring 102 to form a contact hole 104. In this case, as the dry etching using the plasma progresses, the metallic curable polymer 106 formed by reacting with the gate or the metal wires is formed as a by-product of dry etching in the lower portion of the contact hole 104, and inside the contact hole. The polymer 107 which is a dry etching by-product of the interlayer insulating film is formed on the substrate. The polymer 107, which is a dry etching by-product of the interlayer insulating layer 103, serves as a protective layer for the etch barrier during the contact hole etching. Subsequently, an ashing process of removing the photoresist pattern 108 is performed in a subsequent process.
도 2는 포토레지스트 패턴(108)이 건식 공정인 애쉬 공정으로 제거된 모습을 보여준다. 상기와 같이 애쉬 공정이 진행된 뒤에도 상기 콘택홀 주변에는 경화성 폴리머(106), 층간 절연막(103)의 식각 부산물인 폴리머(107) 및 포토레지스트 잔류 패턴(108a) 등이 남아 있어 이를 제거하기 위한 세정 공정이 뒤따른다.2 shows that the photoresist pattern 108 is removed by an ash process which is a dry process. The cleaning process for removing the curable polymer 106, the polymer 107 which is an etch byproduct of the interlayer insulating film 103, and the photoresist residual pattern 108a is left around the contact hole after the ash process is performed as described above. This follows.
상기 세정 공정은 화학 증기를 이용하는데, 게이트 콘택의 경우에는 황산(H2SO4)과 과산화수고(H2O2)의 혼합액인 SPM 용액이 사용되고, 금속 배선의 경우에는 하이드록시 아민(hydroxy amine) 혼합 용액 또는 수산화 암모늄(NH4OH), 아세트산(CH3COOH) 및 초순수(Deionized water)의 혼합 용액인 SMC 용액이 사용된다.The cleaning process uses chemical vapor. In the case of a gate contact, a solution of SPM, a mixture of sulfuric acid (H 2 SO 4 ) and peroxide (H 2 O 2 ), is used, and in the case of metal wiring, hydroxy amine A mixed solution or SMC solution which is a mixed solution of ammonium hydroxide (NH 4 OH), acetic acid (CH 3 COOH) and deionized water is used.
그러나, 상기와 같은 SPM 용액을 사용하는 세정 공정의 경우 140℃ 이상의 고온 공정이 요구되므로 작업자의 안전이 문제될 수 있으며, 설비의 부식 및 환경 오염 등의 문제를 초래할 수 있다. 또한, 하이드록시 아민 혼합 용액이나 SMC 용액을 사용하는 세정 공정의 경우에는 금속의 부식을 방지하면서 경화성 폴리머를 제거하는 조건이 요구되고 있으나, 폴리머 제거 능력과 금속 배선 부식 방지의 목적이 서로 상충되어 적절한 조건의 설정이 어려운 문제점이 있다.However, in the case of the cleaning process using the SPM solution as described above, a high temperature process of 140 ° C. or higher may be required, which may cause worker safety and may cause problems such as corrosion and environmental pollution of equipment. In addition, in the cleaning process using a hydroxy amine mixed solution or an SMC solution, a condition for removing the curable polymer while preventing metal corrosion is required. There is a problem that setting of conditions is difficult.
본 발명은 상기와 같은 문제점을 해결하기 위해 안출한 것으로서, 건식 식각에 의한 콘택홀 내부의 경화성 폴리머 및 포토레지스트 잔류물을 동시에 안정적으로 제거할 수 있는 반도체 소자의 콘택홀 세정 방법에 관한 것이다.The present invention has been made to solve the above problems, and relates to a contact hole cleaning method of a semiconductor device that can stably remove the curable polymer and photoresist residues in the contact hole by dry etching at the same time.
도 1 및 도 2는 일반적인 반도체 소자의 콘택홀 형성 공정을 나타낸 단면도.1 and 2 are cross-sectional views illustrating a process of forming a contact hole in a general semiconductor device.
도 3은 본 발명의 반도체 소자의 콘택홀 세정 방법을 진행한 후의 모습을 보여주는 단면도.3 is a cross-sectional view showing a state after the contact hole cleaning method of the semiconductor device of the present invention.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
101 : 반도체 기판 102 : 게이트 또는 금속 배선101: semiconductor substrate 102: gate or metal wiring
103 : 층간 절연막 104 : 콘택홀103: interlayer insulating film 104: contact hole
105 : 자연 산화막 106 : 금속의 경화성 폴리머105: natural oxide film 106: curable polymer of the metal
107 : 폴리머 108a : 포토레지스트 잔류 패턴107: polymer 108a: photoresist residual pattern
상기와 같은 목적을 달성하기 위한 본 발명의 반도체 소자의 콘택홀 세정 방법은 포토레지스트 패턴을 마스크로 사용하여 게이트 스택 또는 금속 배선 상에 적층되어 있는 층간 절연막을 건식 식각하여 형성된 콘택홀의 내부 및 상부를 세정하는 반도체 소자의 콘택홀 세정 방법에 있어서, 상기 층간 절연막 상에 형성되어 있는 포토레지스트 패턴을 애싱하여 제거하는 단계와, 상기 층간 절연막 상부에 잔류하는 포토레지스트 잔류 패턴 및 상기 콘택홀 내벽의 상기 층간 절연막 건식 식각시 발생된 폴리머를 제거하기 위한 하이드록시 아민(hydroxy amine)을 포함한 유기성 용액에, 상기 건식 식각시 게이트 또는 금속 배선과 반응하여 상기 콘택홀 하부에 존재하는 금속의 경화성 폴리머를 제거하기 위한 용액 및 내부식성을 갖는 인산, 초산 또는 메탄올 중 어느 한 용액을 첨가한 혼합 용액으로 세정하는 단계를 포함하여 이루지는 것을 특징으로 한다.The contact hole cleaning method of the semiconductor device of the present invention for achieving the above object is to use the photoresist pattern as a mask to clean the inside and the top of the contact hole formed by dry etching the interlayer insulating film stacked on the gate stack or the metal wiring. A method of cleaning a contact hole of a semiconductor device to be cleaned, the method comprising: ashing and removing a photoresist pattern formed on the interlayer insulating film, a photoresist residual pattern remaining on an upper portion of the interlayer insulating film, and the interlayer of the inner wall of the contact hole Insulating organic solution containing hydroxy amine to remove the polymer generated during dry etching, and reacts with the gate or metal wiring during the dry etching to remove the curable polymer of the metal under the contact hole In solution and corrosion resistant phosphoric acid, acetic acid or methanol It characterized in that it comprises a step of washing with a mixed solution to which either solution is added.
본 발명의 반도체 소자의 콘택홀 형성 방법은 포토레지스트 잔류 패턴과 콘택홀 하부에 존재하는 금속의 경화성 폴리머 및 층간 절연막의 건식 식각시 발생되는 폴리머를 동시에 제거하는 용액을 사용함으로서 기존의 포토레지스트 패턴을 제거하기 위한 용액, 콘택홀 내벽에 존재하는 폴리머를 제거하는 용액을 각각 따로사용하여 공정 단계의 증가와 세정 용액의 사용량 증가를 가져왔던 기존의 공정을 개선하고 세정에 이용되는 초순수(Deionized water; DIW)의 사용을 현저하게 줄이면서 콘택홀 하부의 금속의 경화성 폴리머의 존재로 인한 전기 저항의 증가를 감소시켜 반도체 성능을 향상시킬 수 있다.The method of forming a contact hole of a semiconductor device of the present invention uses a photoresist pattern by using a solution that simultaneously removes a photoresist residual pattern, a curable polymer of a metal under the contact hole, and a polymer generated during dry etching of an interlayer insulating layer. Deionized water (DIW) used to clean and improve the existing process that used to separate the solution for removal and the solution for removing the polymer in the inner wall of the contact hole, which increased the process step and the amount of the cleaning solution. By significantly reducing the use of), semiconductor performance can be improved by reducing the increase in electrical resistance due to the presence of the curable polymer of the metal under the contact hole.
이하, 도 1 내지 도 3을 참조하여 본 발명의 반도체 소자의 콘택홀 형성 방법을 상세히 설명하기로 한다. 도 3은 본 발명의 반도체 소자의 콘택홀 세정 방법을 진행한 후의 모습을 보여주는 단면도이다.Hereinafter, a method of forming a contact hole in a semiconductor device of the present invention will be described in detail with reference to FIGS. 1 to 3. 3 is a cross-sectional view showing a state after the contact hole cleaning method of the semiconductor device of the present invention.
먼저, 도 1 및 도 2에 도시한 바와 같이 포토레지스트 패턴(108)을 마스크로 사용하여 게이트 스택 또는 금속 배선(102)의 일부가 노출되도록 층간 절연막(103)이 플라즈마를 이용한 건식 식각되어 콘택홀(104)이 형성된 후, 상기 포토레지스트 패턴(108)이 애싱(ashing) 공정으로 제거된다. 이 때, 상기 층간 절연막(103)의 상부에는 포토레지스트 잔류 패턴(108a)이 남게되고 상기 콘택홀(104)의 하부에는 플라즈마를 이용한 건식 식각시 상기 게이트 스택 또는 금속 배선과 반응하여 생성된 금속의 경화성 폴리머(106)가 존재하며 상기 콘택홀 내벽에는 상기 건식 식각의 잔류물인 폴리머(107)가 발생된다. 여기서, 상기 금속의 경화성 폴리머(106)는 하부의 게이트 스택 또는 금속 배선의 물질에 따라 틀려지는데 게이트 스택 또는 금속 배선의 물질이 티타늄(Ti)일 경우에는 Ti/TiN 폴리머가 생성된다. 그리고 상기 게이트 스택 또는 금속 배선 상에는 플라즈마를 이용한 건식 식각 공정 진행에 의해 자연 산화막(native oxide)(105)이 성장된다.First, as shown in FIGS. 1 and 2, using the photoresist pattern 108 as a mask, the interlayer insulating layer 103 is dry-etched using plasma to expose a portion of the gate stack or the metal interconnection 102 to contact holes. After 104 is formed, the photoresist pattern 108 is removed by an ashing process. In this case, a photoresist residual pattern 108a remains on the interlayer insulating layer 103 and a metal formed by reacting with the gate stack or metal wiring during dry etching using plasma is disposed below the contact hole 104. A curable polymer 106 is present and a polymer 107 that is a residue of the dry etching is generated on the inner wall of the contact hole. Here, the curable polymer 106 of the metal is different depending on the material of the gate stack or the metal wiring. The Ti / TiN polymer is produced when the material of the gate stack or the metal wiring is titanium (Ti). The native oxide 105 is grown on the gate stack or the metal wire by a dry etching process using plasma.
본 발명은 상기 애싱 공정으로 제거되지 않는 포토레지스트 잔류 패턴, 콘택홀 내벽의 폴리머, 금속의 경화성 폴리머 그리고 자연 산화막을 동시에 제거하는 반도체 소자의 콘택홀 세정 방법을 제시한다.The present invention provides a contact hole cleaning method for a semiconductor device which simultaneously removes a photoresist residual pattern, a polymer on a contact hole inner wall, a curable polymer of a metal, and a natural oxide film, which are not removed by the ashing process.
상기와 같은 폴리머 등은 표면 몰포러지(surface morphology)를 거칠게 만들고 전기적 단락(short) 및 고저항을 유발하므로 필수적으로 제거되어야 한다. 이를 위해, 콘택홀 세정 용액은 포토레지스트 패턴 및 콘택홀 내벽의 폴리머를 제거하기 위한 용액에 자연산화막 및 금속의 경화성 폴리머를 제거하기 위한 용액 및 내부식성을 갖는 용액을 첨가한 혼합 용액이 증기화되어 사용된다.Such polymers and the like have to be removed essentially because of roughening surface morphology and causing electrical short and high resistance. To this end, the contact hole cleaning solution is vaporized by adding a solution for removing the polymer of the photoresist pattern and the inner wall of the contact hole and a solution for removing the curable polymer of the natural oxide film and the metal and a solution having corrosion resistance. Used.
상기 포토레지스트 패턴 및 콘택홀 내벽의 폴리머를 제거하기 위한 용액으로는 하이드록시 아민(hydroxy amine)이 포함되는 유기성 용액이 사용되며, 상기 금속의 경화성 폴리머 및 자연 산화막을 제거하기 위한 식각 용액으로는 황산(H2SO4), 과산화수소(H2O2) 또는 NH3F와 HF의 혼합액 중 어느 하나가 사용된다. 즉, 상기 하이드록시 아민을 포함하는 유기성 용액이 초고순도의 초순수(DIW)와 혼합되어 세정 용액의 베이스(base)로 사용되고 상기 황산 등의 식각 용액이 첨가제로 사용된다.As a solution for removing the polymer of the photoresist pattern and the inner wall of the contact hole, an organic solution containing hydroxy amine is used, and sulfuric acid is used as an etching solution for removing the curable polymer and the natural oxide layer of the metal. (H 2 SO 4 ), hydrogen peroxide (H 2 O 2 ) or a mixture of NH 3 F and HF is used. That is, the organic solution containing the hydroxy amine is mixed with ultra high purity ultra pure water (DIW) and used as a base of the cleaning solution, and an etching solution such as sulfuric acid is used as an additive.
이 때, 상기 세정 용액을 사용하여 콘택홀을 세정하는 공정은 증기화된 세정 용액의 온도를 40∼90℃ 정도로 하고 상기 증기화된 세정 용액에 노출된 기판의 온도는 80℃ 정도로 유지하여 층간 절연막의 식각을 최소화하는 한편, 콘택홀 하부에 존재하는 금속의 경화성 폴리머와 증기화된 세정 용액의 반응을 활성화한다.At this time, the process of cleaning the contact hole using the cleaning solution is to maintain the temperature of the vaporized cleaning solution to about 40 ~ 90 ℃ and the temperature of the substrate exposed to the vaporized cleaning solution to about 80 ℃ to maintain an interlayer insulating film While minimizing etching, the reaction of the curable polymer and the vaporized cleaning solution of the metal present in the lower portion of the contact hole is activated.
여기서, 상기 자연 산화막 및 금속의 경화성 폴리머의 식각 용액인 황산(H2SO4), 과산화수소(H2O2) 또는 NH3F와 HF의 혼합액은 0.1∼50wt%의 범위 내에서 사용되고, 이는 전체 세정 용액의 0.01∼1vol%의 범위를 갖는다.Here, sulfuric acid (H 2 SO 4 ), hydrogen peroxide (H 2 O 2 ) or a mixture of NH 3 F and HF which is an etching solution of the natural oxide film and the curable polymer of the metal is used in the range of 0.1 to 50 wt%, It has a range of 0.01-1 vol% of the cleaning solution.
이와 같이 하이드록시 아민기를 포함하는 세정 용액을 사용하는 경우에는 콘택홀 내부의 건식 식각의 부산물인 폴리머와 포토레지스트 잔류 패턴은 용이하게 제거되나 하부의 게이트 스택 또는 금속 배선의 금속의 부식을 유발할 수 있다. 이를 방지하기 위해 내부식성을 갖는 용액을 첨가제로 사용한다.When using a cleaning solution containing a hydroxy amine group as described above, the polymer and photoresist residual patterns, which are by-products of the dry etching inside the contact hole, are easily removed, but may cause corrosion of the metal of the lower gate stack or the metal wiring. . To prevent this, a solution having corrosion resistance is used as an additive.
상기 내부식성을 갖는 용액은 인산, 초산 또는 메탄올을 사용하며 전체 세정 용액의 5∼10vol% 의 범위 내에서 사용하게 된다.The corrosion resistant solution uses phosphoric acid, acetic acid or methanol and is used within the range of 5 to 10 vol% of the total cleaning solution.
상술한 바와 같은 세정 용액을 사용하여 콘택홀 세정 공정을 수행한 결과 상기 포토레지스트 잔류 패턴, 콘택홀 내부의 폴리머, 콘택홀 하부의 금속의 경화성 폴리머 및 자연 산화막이 모두 제거되어 도 3에서와 같이, 깨끗이 세정된 콘택홀이 완성된다.As a result of performing the contact hole cleaning process using the above-described cleaning solution, all of the photoresist residual pattern, the polymer inside the contact hole, the curable polymer of the metal under the contact hole, and the natural oxide film are removed. A clean contact hole is completed.
상술한 바와 같은 본 발명의 반도체 소자의 콘택홀 세정 방법은 다음과 같은 효과가 있다.The contact hole cleaning method of the semiconductor device of the present invention as described above has the following effects.
포토레지스트 잔류 패턴과 콘택홀 하부에 존재하는 금속의 경화성 폴리머 및 층간 절연막의 건식 식각시 발생되는 폴리머를 동시에 제거하는 용액을 사용함으로서 기존의 포토레지스트 패턴을 제거하기 위한 용액, 콘택홀 내벽에 존재하는 폴리머를 제거하는 용액을 각각 따로 사용하여 공정 단계의 증가와 세정 용액의 사용량 증가를 가져왔던 기존의 공정을 개선하고 세정에 이용되는 초순수(Deionizedwater; DIW)의 사용을 현저하게 줄이면서 콘택홀 하부의 금속의 경화성 폴리머의 존재로 인한 전기 저항의 증가를 감소시켜 반도체 성능을 향상시킬 수 있다.A solution for removing the existing photoresist pattern by using a solution that simultaneously removes the photoresist residual pattern and the curable polymer of the metal under the contact hole and the polymer generated during the dry etching of the interlayer insulating film. The separate polymer removal solution is used separately to improve the existing process, which leads to an increase in process steps and an increase in the amount of cleaning solution, and significantly reduces the use of Deionizedwater (DIW) used for cleaning. Semiconductor performance can be improved by reducing the increase in electrical resistance due to the presence of a curable polymer of metal.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100514167B1 (en) * | 2002-06-24 | 2005-09-09 | 삼성전자주식회사 | Cleaning Solution and Method of Cleaning Ceramic Part |
| KR100850101B1 (en) * | 2006-12-15 | 2008-08-04 | 동부일렉트로닉스 주식회사 | Process for removing a residue for silicide process |
| US7645695B2 (en) | 2006-04-03 | 2010-01-12 | Samsung Electronics Co., Ltd. | Method of manufacturing a semiconductor element |
| WO2010101759A3 (en) * | 2009-03-02 | 2010-11-18 | Applied Materials, Inc. | Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates |
| US7846349B2 (en) | 2004-12-22 | 2010-12-07 | Applied Materials, Inc. | Solution for the selective removal of metal from aluminum substrates |
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| US4510018A (en) * | 1984-02-21 | 1985-04-09 | The Lea Manufacturing Company | Solution and process for treating copper and copper alloys |
| US6123088A (en) * | 1999-12-20 | 2000-09-26 | Chartered Semiconducotor Manufacturing Ltd. | Method and cleaner composition for stripping copper containing residue layers |
| US6303482B1 (en) * | 2000-06-19 | 2001-10-16 | United Microelectronics Corp. | Method for cleaning the surface of a semiconductor wafer |
| US6656894B2 (en) * | 2000-12-07 | 2003-12-02 | Ashland Inc. | Method for cleaning etcher parts |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100514167B1 (en) * | 2002-06-24 | 2005-09-09 | 삼성전자주식회사 | Cleaning Solution and Method of Cleaning Ceramic Part |
| US7846349B2 (en) | 2004-12-22 | 2010-12-07 | Applied Materials, Inc. | Solution for the selective removal of metal from aluminum substrates |
| US8389418B2 (en) | 2004-12-22 | 2013-03-05 | Applied Materials, Inc. | Solution for the selective removal of metal from aluminum substrates |
| US7645695B2 (en) | 2006-04-03 | 2010-01-12 | Samsung Electronics Co., Ltd. | Method of manufacturing a semiconductor element |
| KR100850101B1 (en) * | 2006-12-15 | 2008-08-04 | 동부일렉트로닉스 주식회사 | Process for removing a residue for silicide process |
| WO2010101759A3 (en) * | 2009-03-02 | 2010-11-18 | Applied Materials, Inc. | Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates |
| US8398779B2 (en) | 2009-03-02 | 2013-03-19 | Applied Materials, Inc. | Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates |
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