KR20030092666A - ORGANIC BOTTOM ANTI-REFLECTIVE FILM FOR ArF PHOTORESIST AND METHOD FOR PREPARING THE SAME - Google Patents

Abstract

PURPOSE: Provided is an organic anti-reflection coating composition which forms an under coating to decrease an adverse effect of reflection from a background substrate in a photolithography process using various radiations. CONSTITUTION: The organic anti-reflection coating composition for an ArF photoresist is characterized by comprising the compound of the formula 1 as a light absorbing agent, wherein X is a hydrogen atom or methyl; and at least one of R1-R15 is hydroxy group and the others are independently or simultaneously hydrogen, halogen, nitro group, amino group, a C1-C3 alkyl group optionally having a hydroxy group, a C1-C3 alkoxy group optionally having a carbonyl group, benzene, or a C5-C6 cycloalkyl group.

Description

Organic anti-reflection film for ARF photoresist and its manufacturing method {ORGANIC BOTTOM ANTI-REFLECTIVE FILM FOR ArF PHOTORESIST AND METHOD FOR PREPARING THE SAME}

The present invention provides an organic antireflective coating composition for ArF photoresist that can form an undercoat layer that effectively reduces the adverse effects of reflection from a background substrate in a photolithography process using various radiations, and an organic antireflective film for ArF photoresist using the composition. And a method for producing the same.

The photoresist is coated, heated, and dried on a substrate such as wafer, glass, ceramic, or metal by spin coating or roller coating to form a photoresist film, and then printing a circuit pattern through an exposure mask with radiation such as ultraviolet rays. And post-exposure bake treatment and development for forming an image as necessary.

Etching is performed using an image such as a mask to effectively pattern the substrate, and typical examples of the application include semiconductor manufacturing processes such as IC, circuit board manufacturing such as liquid crystal, and other photo production processes. do.

Along with the trend toward finer dimensions in semiconductor precision work using photoresists, preventing reflection of light from the substrate becomes a very important issue. Therefore, researches to solve the problem of poor resolution by providing an anti-reflection film between the photoresist and the substrate have been widely conducted.

Examples of known antireflective films are organic films made of inorganic films such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon and amorphous silicon, light absorbers and polymer materials.

In general, inorganic films require facilities such as vacuum evaporation apparatus, CVD apparatus, and sputter apparatus for film formation. In contrast, organic membranes do not require special facilities and relatively more research has been conducted.

The organic antireflective film possesses physical properties exhibiting great absorbency to radiation, is insoluble in the photoresist solvent, prevents the diffusion of low molecular weight material from the organic antireflective film into the photoresist layer during coating or drying with heating, Compared to photoresist, it has a high dry etching rate.

However, it is still not satisfactory to be known as an organic antireflective film for photoresists that can form an undercoat layer that effectively reduces the adverse effects of reflections from the background substrate in photolithography processes using various radiations, especially for ArF photoresist. Much research is needed.

The present invention, in consideration of the problems of the prior art, to provide a coating composition for producing an organic antireflection film for ArF photoresist comprising a novel light absorber compound, and to provide an organic antireflection film for ArF photoresist using the composition and a method of manufacturing the same. The purpose.

Another object of the present invention is to provide a coating composition for preparing an organic antireflection film for ArF photoresist, which can form an undercoat layer that effectively reduces the adverse effects of reflection from a background substrate in a photolithography process, an organic antireflection film for ArF photoresist using the composition, and It is to provide a method for producing the same.

The present invention, in order to achieve the above object, in the coating liquid composition for producing an organic antireflection film for ArF photoresist,

Provided is an organic antireflective coating composition for an ArF photoresist comprising a compound represented by Formula 1 as a light absorbing agent.

[Formula 1]

In the formula of Formula 1,

X is hydrogen or methyl;

R ¹ to R ¹⁵ are at least any one of these are hydroxyl groups, and the others are each independently or simultaneously hydrogen; halogen; Nitro group; Amino group; An alkyl group having 1 to 3 carbon atoms containing or without a hydroxyl group; An alkoxy group having 1 to 3 carbon atoms, which may or may not contain a carbonyl group; benzene; Or cycloalkyl having 5 to 6 carbon atoms.

The light absorbing agent is preferably contained in 0.1 to 30% by weight in the coating liquid composition.

In addition, the present invention is an organic antireflection film composition for ArF photoresist,

It provides an organic antireflection film for ArF photoresist comprising a light absorber represented by the formula (1).

The light absorbing agent is preferably contained in 1 to 50% by weight in the organic antireflection film.

In addition, the present invention is a method of manufacturing an organic antireflection film for ArF photoresist,

a) applying an organic antireflective coating solution for ArF photoresist comprising a light absorbing agent represented by Formula 1 on a substrate; And

b) heating the coated substrate of step a) to form an organic antireflection film

It provides a method for producing an organic antireflection film for ArF photoresist comprising a.

In addition, the present invention is a photolithography method by ArF laser exposure,

a) applying an organic antireflective coating liquid comprising a light absorbing agent represented by Chemical Formula 1 on a substrate and heating to form an organic antireflective coating;

b) applying an ArF photoresist solution on the organic antireflection film of step a) and heating to form an ArF photoresist film;

c) exposing the substrate on which the ArF photoresist film of step b) is formed to ArF laser light;

d) developing an image by adding an aqueous alkali developer to the exposed substrate of step c); And

e) dry corrosion of the organic anti-reflection film of step a)

It provides a photolithography method by ArF laser exposure comprising a.

Hereinafter, the present invention will be described in detail.

The present invention is to apply the compound represented by the formula (1) as a light absorber of the organic antireflection film for ArF photoresist. Such a light absorbent compound represented by Chemical Formula 1 has a very good absorption characteristics, that is, a high absorption coefficient, good solubility to provide a variety of excellent process characteristics in the photolithography process by ArF laser exposure. In general, the higher the absorbance compound is, the more effective it is in reducing the reflection of light from the highly reflective substrate, and the compound of Formula 1 of the present invention corresponds to this.

The present invention provides a novel organic anti-reflective coating liquid composition containing an organic polymer, a solvent and a novel light absorber compound for this purpose, to provide an organic anti-reflective coating film for ArF photoresist and a method of manufacturing the same. The present invention also includes a method of coating an substrate with the organic antireflection coating liquid to form an organic antireflection film, and resolving the photoresist film coated on the organic antireflection film. The light absorber compound of the present invention has excellent absorption properties, good solubility and good photolithography properties.

Compound represented by Formula 1 may be a compound as follows, these may be selected in one or more kinds to be included in the organic anti-reflective coating liquid.

The present invention is a method of applying the compound represented by the formula (1) to the organic antireflection film is contained in the organic antireflection coating solution for ArF photoresist. The content is preferably 0.1 to 30% by weight in the coating liquid. If it is less than 0.1 wt%, it may cause reflection of light due to inadequate absorption, and there may be a problem of pattern distortion such as undercut and notching. If it exceeds 30 wt%, fume is generated during plastic heating. There may be problems such as generating pollution.

This organic antireflection coating liquid is basically

a) a light absorber compound represented by Formula 1; b) organic polymers; And c) a solvent.

The preferred composition of the organic anti-reflective coating liquid is

a) 0.1 to 30 parts by weight of the light absorbent compound represented by Formula 1;

b) 0.1 to 30 parts by weight of the organic polymer; And

c) 40 to 99.8 parts by weight of solvent

It includes.

The composition ratio depends on the molecular weight of the organic polymer and the predetermined film thickness to be coated, and may also vary depending on the coating conditions.

In addition, one or more additives such as a monomeric crosslinking agent, a lower alcohol, a crosslinking reaction accelerator, a surface leveling agent, an adhesion promoter, an antifoaming agent, an acid, and an acid generator may be further included in consideration of characteristics and curability of the organic antireflection film formed on the substrate. have. These additives may be incorporated into the antireflective composition to improve certain performance.

The crosslinking agent as the additive may be used in the present invention as a crosslinking agent for crosslinking hydroxy, amide, carboxyl and thiol functional polymers. Examples of these crosslinkers are hydroxy or alkoxymethylmelamine, urea-formaldehyde resins, benzyl ethers or alcohols, epoxy compounds, isocyanates or blocking equalizers and alkylol acrylamides or methacrylamides. Other crosslinking accelerators may also be used which can increase the efficiency of the crosslinking reaction with other additives.

The acid as the additive may in particular use an exothermic acid that generates heat, for example 2,1,4-diazonaphthoquinone ester which is a phenolic compound.

The organic polymer of b) used in the organic antireflective coating solution of the present invention provides coating properties upon bonding and coating in the organic antireflective coating. Examples of such organic polymers are acrylates, amides, esters, ethers, hydroxystyrenes, imides, methacrylates, methyl vinyl ether-maleic anhydride, oxymethylene, styrene, oxyalkylenes, urethanes, vinyl acetates and vinyl ethers Homopolymers and copolymers of phenolic resins, phenolic resins, epoxy resins, novolac resins and the like can be selected and used. In particular, an acrylate polymer (poly (acetoxystyrene-glycidyl methacrylate-hydroxyethyl methacrylate-methyl methacrylate)) into which the acetoxy styrene monomer represented by the following general formula (2) is introduced, poly (acetoxy Styrene-maleic anhydride), or mixtures thereof. In addition, it is preferable that the average molecular weight of such an organic polymer is 5,000 to 50,000 in view of solubility in a solvent and removal of corrosion of the final film.

[Formula 2]

In Formula 2, a, b, c, and d are degrees of polymerization.

In addition, the solvent of c) is a single solvent or a mixture of solvents that dissolve the solid component of the organic antireflective coating to provide excellent coating properties. Examples of preferred solvents include butyrolactone, cyclopentanone, cyclohexanone, dimethyl acetamide, dimethyl formamide, dimethyl sulfoxide, N-methyl pyrrolidone, tetrahydrofurfural alcohol, propylene glycol monomethyl ether (PGME) , Propylene glycol monomethyl ether acetate (PGMEA), ethyl lactate or mixtures thereof, but is not limited to these solvents, which are low in toxicity and have good coating and solubility properties. Among them, PGME, PGMEA and ethyl lactate, or mixtures thereof are particularly preferred.

The organic antireflective coating solution of the present invention is coated on a substrate and then cured by heating to form an organic antireflective coating. Heating in a hot plate or convection oven for a sufficient time at a high temperature sufficient to not dissolve in the coating solution of the photoresist or the aqueous alkaline developer. The heating temperature at this time is preferably 70 to 250 ° C. If the heating temperature is less than 70 ℃ may be insufficient removal of the solvent or insufficient cross-linking reaction, and if the temperature exceeds 250 ℃ the polymer produced may be chemically unstable.

The organic antireflection film of the present invention is preferably such that the light absorbing compound represented by Formula 1 is contained in 1 to 50% by weight of the film.

Such an organic antireflection film basically includes a) a light absorbing compound represented by Chemical Formula 1; And b) organic polymers.

The preferred composition of the organic antireflection film is

a) 1 to 50 parts by weight of the light absorbent compound represented by Formula 1; And

b) 50 to 99 parts by weight of the organic polymer

It includes.

In the photolithography process by ArF laser exposure using the organic antireflection film of the present invention, an organic antireflection coating liquid containing the light absorbing agent represented by Chemical Formula 1 is coated and heated on a substrate to form an organic antireflection film, and the organic After forming by applying a photoresist film on the anti-reflection film, the photoresist is image exposed, after which it is developed with an aqueous developer and the treated photoresist is removed. Any heating step can then be introduced before the developing step and after the exposure step. Methods of coating and imaging photoresists are well known in the art and can be optimized according to the specific type of resist used. The patterned substrate is then corroded in a suitable corrosion chamber to remove the exposed portion of the organic antireflective film, leaving the photoresist serving as a corrosion mask.

The organic antireflection film including the light absorbing agent represented by Formula 1 of the present invention is particularly effective in the photolithography process by ArF laser exposure, and has the advantage of obtaining a clear pattern. Since the organic antireflective film of the present invention is dry etched after image development, the film has a sufficiently low metal ion concentration and purity and does not adversely affect the properties of the semiconductor device. To this end, solutions containing organic polymers or light absorbers may be passed through an ion exchange column, filtered and extracted to reduce the concentration of metal ions and to reduce particulates. Therefore, the coating liquid composition of the present invention may have a concentration of metal ions of less than 50 ppb for each metal ion.

The present invention will be described in more detail with reference to the following examples. However, an Example is for illustrating this invention and is not limited only to these.

EXAMPLE

Example 1

(Synthesis of acrylate-based polymer in which acetoxy styrene monomer is introduced)

20 g of acetoxystyrene (AST), 35.06 g of glycidyl methacrylate (GMA), 8.02 g of 2-hydroxyethyl methacrylate (2-HEMA), 18.52 g of methyl methacrylate (MMA), azobisbuty 0.816 g of ronitrile (AIBN) and 164.83 g of tetrahydrofuran (THF) were added to a round flask, and the temperature was raised to 65 ° C. while stirring to polymerize for 4 hours. After the reaction, the reaction mixture was cooled to room temperature to stop the polymerization, and the remaining reaction raw material and reaction solvent were removed by precipitation using methanol to obtain a polymer.

This polymer is a high molecular compound of the formula (2).

(Production of Organic Antireflection Coatings)

An organic antireflective coating liquid was prepared by mixing 0.13 g of the polymer obtained above, 0.091 g of a light absorbing compound represented by Formula 1a, 0.06 g of a crosslinking agent, 0.01 g of an acid generator, and 13.67 g of propylene glycol monomethyl ether acetate (PGMEA). .

[Formula 1a]

Example 2

To prepare an organic polymer by changing the molar ratio of the input monomer of the polymer of the formula (2) as shown in Table 1, to prepare an organic anti-reflective coating liquid by coating the organic polymer in the same manner as in Example 1 After thermosetting, thickness loss, refractive index, and absorbance for the photoresist solvent were evaluated.

(Evaluation of Thickness Loss of Organic Anti-Reflective Film to Photoresist Solvent of Oil-Based Anti-Fire Film

Each organic anti-reflective coating solution was applied to a silicon wafer with a uniform thickness of 350 mm 3, and the sample was heated to 205 ° C. for 90 seconds. The formed film was a photoresist solvent 2-heptanone, ethyl lactate (EL). And propylene glycol monomethyl ether acetate (PGMEA) on each of the coated organic anti-reflective coating sample and allowed to stand for 1 minute, then spin-dried at 5000 rpm for 30 seconds and then treated at 100 ℃ on a heating substrate for 60 seconds before the photoresist solvent treatment The thickness loss of the subsequent organic antireflection film was examined.

(Measurement of Refractive Index and Absorption of Oil-Based Yarn Protective Film)

The organic anti-reflective coating liquid was applied on the silicon wafer to a uniform thickness of 350 mm 3, and the sample was heated to 205 ° C. for 90 seconds on a heating substrate. The refractive index and the absorbance of the wafer film coated with the organic antireflection film were measured using an ellipsomta.

division Monomer input molar ratio Refractive index Absorbance Thickness loss AST GMA HEMA MMA Composition 1 2 One One 6 1.68 0.53 none Composition 2 2 2 One 5 1.57 0.61 none Composition 3 2 3 One 4 1.49 0.55 none Composition 4 2 3 3 2 1.43 0.73 none Composition 5 2 2 4 2 1.46 0.68 none

Example 3

To change the type of the light absorbing compound as shown in Table 2 below to prepare an organic anti-reflective coating solution in the same manner as in Example 1 and to apply it on a substrate and thermally cured, the thickness loss, refractive index, and absorption for the photoresist solvent The figure was evaluated.

division Light absorber compound Refractive index Absorbance Thickness loss Composition 6 Formula 1b 1.51 0.51 none Composition 7 Formula 1c 1.49 0.63 none Composition 8 Formula 1d 1.59 0.56 none

[Formula 1b]

[Formula 1c]

[Formula 1d]

The organic antireflection film of the present invention forms an undercoat layer that effectively reduces the adverse effects of reflection from the background substrate in the ArF photolithography process, thereby providing excellent resolution, and there is no thickness loss by the upper photoresist solvent, and after development Dry corrosion is easy.

Claims (16)

In the organic antireflection coating composition for ArF photoresist, An organic antireflective coating composition for an ArF photoresist comprising a compound represented by Formula 1 as a light absorbing agent: [Formula 1] In the formula of Formula 1, X is hydrogen or methyl; R ¹ to R ¹⁵ are at least one of these hydroxyl groups, and the others are each independently or simultaneously hydrogen; halogen; Nitro group; Amino group; An alkyl group having 1 to 3 carbon atoms containing or without a hydroxyl group; An alkoxy group having 1 to 3 carbon atoms, which may or may not contain a carbonyl group; benzene; Or cycloalkyl having 5 to 6 carbon atoms. The method of claim 1, An organic antireflective coating composition for an ArF photoresist, wherein the light absorber is a compound represented by the following Chemical Formula 1a, Chemical Formula 1b, Chemical Formula 1c, or Chemical Formula 1d: [Formula 1a] [Formula 1b] [Formula 1c] [Formula 1d] The method of claim 1, An organic antireflective coating composition for an ArF photoresist wherein the light absorber is selected from one or more of the following formulas: The method of claim 1, The composition a) 0.1 to 30 parts by weight of the compound represented by Formula 1; b) 0.1 to 30 parts by weight of the organic polymer; And c) 40 to 99.8 parts by weight of solvent Organic anti-reflective coating composition for ArF photoresist comprising a. The method of claim 4, wherein The composition d) at least one additive selected from the group consisting of monomeric crosslinking agents, lower alcohols, crosslinking reaction accelerators, surface leveling agents, adhesion promoters, defoamers, acids, and acid generators Organic antireflection coating composition for ArF photoresist further comprising. The method of claim 4, wherein The organic polymers of b) include acrylates, amides, esters, ethers, hydroxystyrenes, imides, methacrylates, methyl vinyl ether-maleic anhydride, oxymethylene, styrene, oxyalkylenes, urethanes, vinyl acetates and vinyls Homopolymers selected from the group consisting of ethers, or combination copolymers thereof; Phenolic resins; Epoxy resins; And an antireflection coating liquid composition for an ArF photoresist selected from the group consisting of novolac resins. The method of claim 4, wherein ArF, wherein the organic polymer of b) is poly (acetoxystyrene-glycidyl methacrylate-hydroxyethyl methacrylate-methylmethacrylate), poly (acetoxystyrene-maleic anhydride), or a mixture thereof Organic antireflective coating composition for photoresist. The method of claim 4, wherein The organic polymer of b) is an organic antireflection coating composition for ArF photoresist having an average molecular weight of 10,000 to 1,000,000. The method of claim 4, wherein The solvent of c) is butyrolactone, cyclopentanone, cyclohexanone, dimethyl acetamide, dimethyl formamide, dimethyl sulfoxide, N-methyl pyrrolidone, tetrahydrofurfural alcohol, propylene glycol monomethyl ether (PGME ), Propylene glycol monomethyl ether acetate (PGMEA), and an organic antireflective coating liquid composition for ArF photoresist selected from the group consisting of ethyl lactate. An organic antireflective coating composition for an ArF photoresist comprising a light absorber represented by Formula 1 below: [Formula 1] In the formula of Formula 1, X is hydrogen or methyl; R ¹ to R ¹⁵ are at least one of these hydroxyl groups, and the others are each independently or simultaneously hydrogen; halogen; Nitro group; Amino group; An alkyl group having 1 to 3 carbon atoms containing or without a hydroxyl group; An alkoxy group having 1 to 3 carbon atoms, which may or may not contain a carbonyl group; benzene; Or cycloalkyl having 5 to 6 carbon atoms. The method of claim 10, An organic antireflection film composition for ArF photoresist wherein the light absorbing agent is a compound represented by the following Chemical Formula 1a, Chemical Formula 1b, Chemical Formula 1c, or Chemical Formula 1d: [Formula 1a] [Formula 1b] [Formula 1c] [Formula 1d] The method of claim 10, The composition a) 1 to 50 parts by weight of the light absorber represented by Formula 1; And b) 50 to 99 parts by weight of the organic polymer Organic antireflection film composition for ArF photoresist comprising a. The method of claim 12, The organic polymers of b) include acrylates, amides, esters, ethers, hydroxystyrenes, imides, methacrylates, methyl vinyl ether-maleic anhydride, oxymethylene, styrene, oxyalkylenes, urethanes, vinyl acetates and vinyls. Homopolymers selected from the group consisting of ethers, or combination copolymers thereof; Phenolic resins; Epoxy resins; And at least one selected from the group consisting of novolac resins. In the manufacturing method of the organic antireflection film for ArF photoresist, a) applying an organic antireflective coating solution for ArF photoresist comprising a light absorbing agent represented by Formula 1 on a substrate; And b) heating the coated substrate of step a) to form an organic antireflection film Method for manufacturing an organic antireflection film for ArF photoresist comprising: [Formula 1] In the formula of Formula 1, X is hydrogen or methyl; R ¹ to R ¹⁵ are at least one of these hydroxyl groups, and the others are each independently or simultaneously hydrogen; halogen; Nitro group; Amino group; An alkyl group having 1 to 3 carbon atoms containing or without a hydroxyl group; An alkoxy group having 1 to 3 carbon atoms, which may or may not contain a carbonyl group; benzene; Or cycloalkyl having 5 to 6 carbon atoms. The method of claim 14, The heating of step b) is a method of manufacturing an organic antireflection film for ArF photoresist is carried out at a temperature of 70 to 250 ℃. In the photolithography method by ArF laser exposure, a) applying an organic antireflective coating liquid comprising a light absorbing agent represented by Formula 1 on a substrate and heating to form an organic antireflective coating; b) applying an ArF photoresist solution on the organic antireflection film of step a) and heating to form an ArF photoresist film; c) exposing the substrate on which the ArF photoresist film of step b) is formed to ArF laser light; d) developing an image by adding an aqueous alkali developer to the exposed substrate of step c); And e) dry corrosion of the organic anti-reflection film of step a) Photolithography method by ArF laser exposure comprising: [Formula 1] In the formula of Formula 1, X is hydrogen or methyl; R ¹ to R ¹⁵ are at least one of these hydroxyl groups, and the others are each independently or simultaneously hydrogen; halogen; Nitro group; Amino group; An alkyl group having 1 to 3 carbon atoms containing or without a hydroxyl group; An alkoxy group having 1 to 3 carbon atoms, which may or may not contain a carbonyl group; benzene; Or cycloalkyl having 5 to 6 carbon atoms.