KR20030075631A - A method for etch of semiconductor device by using plasma - Google Patents

Abstract

PURPOSE: A method for etching a semiconductor device using plasma is provided to be capable of improving the quality of the semiconductor device and the capacity of a TCP(Transformer Coupled Plasma) equipment by removing particles generated when carrying out an etching process at a BARC(Bottom Anti-Reflective Coating), using SF6 and O2 plasma. CONSTITUTION: A plasma etching process is carried out at a BARC by using a TCP method. At this time, particles are generated and attached on the inner wall of a chamber(100) and many kinds of parts. Then, the particles are removed by using SF6 and O2 plasma. Then, a wafer(110) is loaded in the chamber for carrying out an etching process. The BARC and an etch object layer are selectively etched. Preferably, the particle removing process is carried out by using the SF6 plasma of 100-300 sccm and the O2 plasma of 10-100 sccm.

Description

A method for etching semiconductor devices using plasma {A METHOD FOR ETCH OF SEMICONDUCTOR DEVICE BY USING PLASMA}

The present invention relates to a method of etching a semiconductor device using plasma, and more particularly, to an etching method of a semiconductor device using a plasma that can control foreign substances generated during BARC (Bottom Anti Reflect Coating) etching in Transformer Coupled Plasma (TCP) equipment. will be.

The etching method of a semiconductor device using plasma is generated by using an RF generator as an energy source in various types of plasma sources depending on the process conditions. Such a plasma source and an RF generator applied thereto include a planar method for generating a plasma by applying RF power to an anode, and a reactive ion for generating a plasma by applying RF power to a cathode where a wafer is located. Etching) method and CDE (Chemical Downstream Etching) method to supply the supply gas into microwave power in advance by microwave power, and ECR (Electron Cyclotron Resonance) method to induce plasma by inducing electron cyclone movement. Helicon method for forming a high density plasma by adding a high density plasma, TCP (Transformer Coupled Plasma) method for forming a high density plasma by an inductance component induced in the plasma by a current flowing through the coil and a magnetic field by the coil ICP accelerates electrons by causing an electric field inside the plasma (Inductivity Coupled Plasma) method.

On the other hand, as the line width decreases in the semiconductor manufacturing process, a BARC film is required to suppress unstable pattern formation due to reflection of light during the photoexposure process. Therefore, the BARC film requires a separate process in the etching process, and since it is introduced to solve the shaking or instability of the line width during exposure, particularly stable process characteristics are required in the portion during etching.

1 is a schematic view showing an etching apparatus of a semiconductor device using a conventional plasma.

As shown in FIG. 1, in a chamber 10 to perform an etching process of a semiconductor device using plasma, a wafer 1, which is a substrate to be subjected to an etching process, and the wafer 1 in the chamber 10 are performed. ) Is installed on the electrostatic chuck (2) and the lower electrode (3) and the outer lower portion of the lower electrode (3) to prevent the plasma from flowing out of the wafer (1) by the exhaust pump (4) The shadow ring 5 for this is provided.

However, according to the etching method using the TCP method among the etching apparatus configured as described above, since the BARC film (not shown) is itself a carbon component, a large amount of product 6 combined with many carbon components during etching may occur. And they are attached to the walls and parts of the chamber 10.

Therefore, the conventional etching method of a semiconductor device using plasma has the following problems.

A large amount of product combined with the carbon component deposited in the chamber is dropped during the wafer etching process or dropped on the wafer by the vortex to become a foreign material source. That is, the circular foreign material as shown in FIG.

On the other hand, as shown in Fig. 3, the circular foreign material has a constant map as aluminum (Al), a component component in the reaction chamber, and carbon (C), a main component of BARC.

The present invention has been made to solve the above problems by using the SF ₆ and O ₂ plasma to improve the quality of semiconductor devices and equipment capacity by removing the components of the circular foreign substances generated during the conventional TCP etching process An object of the present invention is to provide an etching method of a semiconductor device using plasma.

1 is a schematic view showing an etching apparatus of a semiconductor device using a conventional plasma

2 is a view illustrating a circular foreign material generated when etching a conventional semiconductor device

3 is a view showing the components of the circular foreign material of FIG.

4A and 4B illustrate an etching method of a semiconductor device using a plasma of the present invention.

<Explanation of symbols for the main parts of the drawings>

100 chamber 110 wafer

120: electrostatic chuck 130: lower electrode

140: exhaust pump 150: shadow ring

160: product

The etching method of the semiconductor device using the plasma of the present invention for achieving the above object is a plasma etching method using the TCP method, generated during the BARC film etching process by the TCP method and attached to the walls of the chamber and various components Removing the product with the SF ₆ and O ₂ plasma mixed gas; and fixing the wafer to be etched in the chamber, and selectively etching the BARC and the etching layer. do.

In addition, the SF ₆ plasma is preferably 100 to 300 sccm, and the O ₂ plasma is preferably 10 to 100 sccm.

Hereinafter, an etching method of a semiconductor device using a plasma of the present invention will be described in detail with reference to the accompanying drawings.

4A and 4B illustrate an etching method of a semiconductor device using a plasma of the present invention.

As shown in FIG. 4A, in a chamber 100 to perform an etching process of a semiconductor device using plasma, a wafer 110, which is a substrate to be etched, and a wafer 110 in which the etching process is performed in the chamber 100. ) Is installed on the electrostatic chuck 120, the lower electrode 130, and the outer lower portion of the lower electrode 130 to prevent the plasma from flowing out of the wafer 110 by the exhaust pump 140. A shadow ring 150 is provided for the purpose.

However, according to the etching method using the TCP method among the etching apparatus configured as described above, since the BARC film (not shown in the drawing) itself is a carbon component to be etched on the wafer 110, a large amount of carbon component and A combined amount of product 160 is generated and attached to the walls and components of the chamber 100.

After the etched wafer 110 exits the chamber 100 as shown in FIG. 4B, the product 160 attached to the chamber 100 is etched using SF ₆ and O ₂ plasma mixed gas. To be discharged to the exhaust pump 140. In this case, the SF ₆ plasma is 100 to 300 sccm, the O ₂ plasma is 10 to 100 sccm.

Subsequently, the wafer 110 having the layer to be etched is mounted in the chamber 100 to which the product is not attached although not shown in the drawing, and then an etching process is performed.

As described above, according to the etching method of the semiconductor device using the plasma of the present invention, the conventional circular foreign material does not occur in the BARC film etching process to suppress the unstable pattern formation due to the reflection of light during the photo exposure process. .

Claims (2)

In the plasma etching method using the TCP method, Removing the product generated in the BARC film etching process by the TCP method and attached to the walls of the chamber and various components with a mixture of SF ₆ and O ₂ plasma; And fixing the wafer to be etched in the chamber, and then selectively etching the BARC and the layer to be etched. The method of claim 1, The SF ₆ plasma is 100 to 300 sccm, the O ₂ plasma is an etching method of a semiconductor device using a plasma, characterized in that.