KR20030057676A - Image sensor having notch filter - Google Patents
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- KR20030057676A KR20030057676A KR1020010087750A KR20010087750A KR20030057676A KR 20030057676 A KR20030057676 A KR 20030057676A KR 1020010087750 A KR1020010087750 A KR 1020010087750A KR 20010087750 A KR20010087750 A KR 20010087750A KR 20030057676 A KR20030057676 A KR 20030057676A
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- 239000000758 substrate Substances 0.000 claims abstract description 6
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- 239000003086 colorant Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
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Abstract
Description
본 발명은 반도체 소자에 관한 것으로 특히, 칼라 구현 능력을 향상시킬 수 있는 이미지센서에 관한 것이다.The present invention relates to a semiconductor device, and more particularly to an image sensor that can improve the color implementation ability.
일반적으로, 이미지센서라 함은 광학 영상(Optical image)을 전기 신호로 변환시키는 반도체소자로서, 이중 전하결합소자(CCD : Charge Coupled Device)는 개개의 MOS(Metal-Oxide-Silicon) 캐패시터가 서로 매우 근접한 위치에 있으면서 전하 캐리어가 캐패시터에 저장되고 이송되는 소자이며, CMOS(Complementary MOS; 이하 CMOS) 이미지센서는 제어회로(Control circuit) 및 신호처리회로(Signal processing circuit)를 주변회로로 사용하는 CMOS 기술을 이용하여 화소수만큼 MOS트랜지스터를 만들고 이것을 이용하여 차례차례 출력(Output)을 검출하는 스위칭 방식을 채용하는 소자이다.In general, an image sensor is a semiconductor device that converts an optical image into an electric signal, and a charge coupled device (CCD) has individual metal-oxide-silicon (MOS) capacitors that are very different from each other. A device in which charge carriers are stored and transported in a capacitor while being in close proximity, and a CMOS (Complementary MOS) image sensor is a CMOS technology that uses a control circuit and a signal processing circuit as peripheral circuits. Is a device that employs a switching method that creates MOS transistors by the number of pixels and sequentially detects the output using them.
이러한 다양한 이미지센서를 제조함에 있어서, 이미지센서의 감광도(Photo sensitivity)를 증가시키기 위한 노력들이 진행되고 있는 바, 그 중 하나가 집광기술이다. 예컨대, CMOS 이미지센서는 빛을 감지하는 포토다이오드와 감지된 빛을전기적 신호로 처리하여 데이터화하는 CMOS 로직회로부분으로 구성되어 있는 바, 광감도를 높이기 위해서는 전체 이미지센서 면적에서 포토다이오드의 면적이 차지하는 비율(이를 통상 Fill Factor"라 한다)을 크게 하려는 노력이 진행되고 있다.In manufacturing such various image sensors, efforts are being made to increase the photo sensitivity of the image sensor, and one of them is a light condensing technology. For example, a CMOS image sensor is composed of a photodiode for detecting light and a portion of a CMOS logic circuit for processing the detected light into an electrical signal to make data. In order to increase light sensitivity, the ratio of the photodiode to the total image sensor area is increased. Efforts have been made to increase (usually referred to as Fill Factor).
이미지 센서는 적,녹,청(Red, Green, Blue)의 칼라 필터 어레이(Colour Filter Array; 이하 CFA라 함)를 구비함으로써 각각의 색상을 혼합하여 색상을 구현하도록 한다.The image sensor includes red, green, and blue color filter arrays (hereinafter referred to as CFAs) to mix colors to implement colors.
도 1은 종래기술에 따른 이미지 센서를 도시한 단면도이다.1 is a cross-sectional view showing an image sensor according to the prior art.
도 1을 참조하면 종래의 이미지센서는, 기판(10) 상에 다수의 포토다이오드(11)가 배치되어 있으며, 그 상부에 절연막(12)이 형성되어 있고, 절연막(12) 상의 포토다이오드(11)와 오버랩되지 않은 영역 즉, 포토다이오드(11)에 접하는 영역에 게이트전극(13)이 배치되어 있으며, 게이트전극(13)으로 빛이 입사되는 것을 차단하기 위한 광차단막(16)이 게이트전극(13) 상부에 오버랩되도록 배치되어 있으며, 게이트전극(13)과 광차단막(14) 사이에 보호막(15)이 형성되어 있으며, 보호막(15) 상에 적, 녹, 청 칼라 필터(16a, 16b, 16c)이 각각 포토다이오드(11)와 오버랩되도록 배치되어 있으며, 적, 녹, 청 칼라 필터(16a, 16b, 16c) 상에 OCM(Over Coating Material) 등의 평탄화층(17)이 배치되어 있으며, 평탄화층(17) 상에 적, 녹 청 칼라 필터(16a, 16b, 16c)와 각각 오버랩되는 마이크로 렌즈(18)가 배치되어 있다.Referring to FIG. 1, in the conventional image sensor, a plurality of photodiodes 11 are disposed on a substrate 10, an insulating film 12 is formed on the photodiode 11, and a photodiode 11 on the insulating film 12. ), The gate electrode 13 is disposed in an area not overlapping with the photodiode 11, and the light blocking layer 16 for blocking light from being incident to the gate electrode 13 is provided with the gate electrode ( 13) disposed on the upper portion and overlapping with each other, a passivation layer 15 is formed between the gate electrode 13 and the light blocking layer 14, and the red, green, and blue color filters 16a, 16b, 16c is disposed to overlap with the photodiode 11, and a planarization layer 17 such as an over coating material (OCM) is disposed on the red, green, and blue color filters 16a, 16b, and 16c. The microlenses 18 overlapping the red and cyan color filters 16a, 16b, and 16c on the planarization layer 17, respectively. Is arranged.
전술한 이미지센서의 칼라 특성은 R,G,B 칼라 물질막을 사용하여 구현한 것으로 R,G,B 각각의 필터 특성은 이상적인 컷오프(Cutoff) 특성과는 거리가 있고,서로의 분광영역이 근원적으로 오버랩되는 부분이 존재하게 된다. 이는 칼라 처리 단계에서 순수 칼라 성분을 줄이는 역할을 하게 되고, 칼라 신호대잡음비에 영향을 주어 동적영역(Dynamic range)의 감소를 초래하게 된다.The color characteristics of the image sensor described above are implemented by using R, G, and B color material films. The filter characteristics of R, G, and B are far from ideal cutoff characteristics, and the spectral regions of each other are fundamentally different from each other. There is an overlapping part. This serves to reduce the pure color component in the color processing step, and affects the color signal-to-noise ratio, resulting in a reduction of the dynamic range.
도 2는 종래의 이미지센서의 각 색상의 파장에 따른 투과 특성 즉, 분광특성을 도시한 그래프인 바, 도 2에 도시된 바와 같이 특히, 전술한 분광영역이 오버랩되는 특성은 주로 청색(B)과 녹색(G)에서 두드러지게 나타나는 바, 전술한 분광영역이 오버랩되는 영역을 줄이는 것이 이미지센서의 칼라 재현성을 향상시키는 것이라 할 수 있다.FIG. 2 is a graph illustrating transmission characteristics according to wavelengths of respective colors of the conventional image sensor, that is, spectral characteristics. As shown in FIG. 2, in particular, the characteristics in which the aforementioned spectral regions overlap are mainly blue (B). As it is prominent in green and green (G), reducing the area where the above-described spectral region overlaps can be said to improve the color reproducibility of the image sensor.
상기와 같은 종래 기술의 문제점을 해결하기 위해 제안된 본 발명은, 칼라 필터의 분광영역이 오버랩되는 부분을 최소화하기에 적합한 이미지센서를 제공하는데 그 목적이 있다.The present invention proposed to solve the above problems of the prior art, an object thereof is to provide an image sensor suitable for minimizing the overlapping portion of the spectral region of the color filter.
도 1은 종래기술에 따른 이미지 센서를 도시한 단면도,1 is a cross-sectional view showing an image sensor according to the prior art,
도 2는 종래의 이미지센서의 각 색상의 파장에 따른 분광특성을 도시한 그래프,2 is a graph showing the spectral characteristics according to the wavelength of each color of the conventional image sensor,
도 3은 본 발명의 일실시에에 따른 이미지센서를 도시한 단면도,3 is a cross-sectional view showing an image sensor according to an embodiment of the present invention;
도 4는 본 발명의 노치 필터를 도시한 단면도,4 is a cross-sectional view showing a notch filter of the present invention;
도 5는 노치 필터의 분광특성을 도시한 그래프,5 is a graph showing the spectral characteristics of the notch filter;
도 6은 본 발명에 따른 이미지센서의 분광특성을 도시한 그래프.Figure 6 is a graph showing the spectral characteristics of the image sensor according to the present invention.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
30 : 기판30: substrate
31 : 포토다이오드31: photodiode
32 : 절연막32: insulating film
33 : 게이트전극33: gate electrode
34 : 광차단막34: light blocking film
35 : 보호막35: protective film
37 : 평탄화층37: planarization layer
36a, 36b, 36c : 칼라 필터36a, 36b, 36c: color filter
38 : 마이크로 렌즈38: microlens
상기 목적을 달성하기 위하여 본 발명은, 기판 상에 형성된 다수의 포토다이오드; 상기 포토다이오드 상부에 형성된 적, 녹, 청 칼라 필터; 및 상기 청색 칼라 필터 하부에 형성된 노치 필터를 포함하는 이미지센서를 제공한다.The present invention to achieve the above object, a plurality of photodiodes formed on the substrate; Red, green, and blue color filters formed on the photodiode; And a notch filter formed under the blue color filter.
바람직하게, 본 발명의 상기 노치 필터는 PE-질화막과 산화막이 적층된 쌍을 포함하는 것을 특징으로 하며,Preferably, the notch filter of the present invention is characterized in that it comprises a pair of laminated PE-nitride film and oxide film,
상기 노치 필터는 PE-질화막과 산화막이 교번하여 10번 적층된 것을 포함하는 것을 특징으로 하며,The notch filter includes a PE-nitride layer and an oxide layer that are alternately stacked 10 times.
상기 PE-질화막과 상기 산화막의 굴절율은 각각 2.01과 1.488인 것을 특징으로 하며,The refractive indexes of the PE-nitride film and the oxide film are 2.01 and 1.488, respectively.
상기 PE-질화막과 상기 산화막의 두께는 각각 0.0622㎛(±10%)와 0.085㎛(±10%)인 것을 특징으로 하며,The PE-nitride layer and the oxide layer have a thickness of 0.0622 μm (± 10%) and 0.085 μm (± 10%), respectively.
상기 적, 녹, 청 카라라필터 상에 형성된 마이크로렌즈를 더 포함하는 것을 특징으로 하며,Further comprising a micro lens formed on the red, green, blue color filter,
상기 마이크로렌즈는 볼록 또는 오목 형상인 것을 특징으로 한다.The microlens is characterized in that the convex or concave shape.
본 발명은, 청색 칼라 필터 하부에 노치 필터(Notch filter)를 디자인함으로써 순수 신호 성분의 비율을 증가시켜 이미지 센서의 칼라 구현 능력을 향상시키는 것을 기술적 특징으로 한다.The present invention is characterized by improving the color realization capability of the image sensor by increasing the ratio of pure signal components by designing a notch filter below the blue color filter.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부한 도면을 참조하여 설명하는 바, 도 3은 본 발명의 일실시에에 따른 이미지센서를 도시한 단면도이며, 도 4는 본 발명의 노치 필터를 도시한 단면도이며, 도 5는 노치 필터의 분광특성을 도시한 그래프이며, 도 6은 본 발명에 따른 이미지센서의 분광특성을 도시한 그래프이다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. 3 is a cross-sectional view showing an image sensor according to an embodiment of the present invention, Figure 4 is a cross-sectional view showing a notch filter of the present invention, Figure 5 is a graph showing the spectral characteristics of the notch filter, Figure 6 Is a graph showing the spectral characteristics of the image sensor according to the present invention.
도 3을 참조하면 본 발명의 이미지센서는, 기판(30) 상에 다수의 포토다이오드(31)가 배치되어 있으며, 그 상부에 절연막(32)이 형성되어 있고, 절연막(32) 상의 포토다이오드(31)와 오버랩되지 않은 영역 즉, 포토다이오드(31)에 접하는 영역에 게이트전극(33)이 배치되어 있으며, 게이트전극(33)으로 빛이 입사되는 것을 차단하기 위한 광차단막(36)이 게이트전극(33) 상부에 오버랩되도록 배치되어 있으며, 게이트전극(33)과 광차단막(34) 사이에 보호막막(35)이 형성되어 있으며, 보호막(35) 상에 녹, 청, 적 칼라 필터(36a, 36b, 36c)이 각각 포토다이오드(31)와 오버랩되도록 배치되어 있으며, 녹, 청, 적 칼라 필터(36a, 36b, 36c) 상에 평탄화층(37)이 배치되어 있으며, 평탄화층(37) 상에 녹, 청, 적 칼라 필터(36a, 36b, 36c)와 각각 오버랩되는 마이크로 렌즈(38)가 배치되어 있으며, 청색 칼라 필터(39) 하부에 OCM(Over Coating Material)막(40)을 매개로 노치 필터(39)가 개재되어 있는 바, 노치 필터(39)는 일종의 밴드패스 필터의 일종으로 특수한 파장의 빛을 차단하는 특징이 있는 바, 도 4를 참조하면, 노치필터(39)는 PE-질화막(39a)과 산화막(39b)이 적층되어 이루는 쌍을 포함하는 것으로 서로 교번하여 적층되어 있다.Referring to FIG. 3, in the image sensor according to the present invention, a plurality of photodiodes 31 are disposed on a substrate 30, an insulating film 32 is formed on the upper portion thereof, and a photodiode on the insulating film 32 is formed. The gate electrode 33 is disposed in a region not overlapping with the photodiode 31, that is, in a region in contact with the photodiode 31, and a light blocking film 36 for blocking light from being incident on the gate electrode 33 is provided. (33) It is disposed so as to overlap the upper portion, and a protective film 35 is formed between the gate electrode 33 and the light blocking film 34, green, blue, red color filter 36a, on the protective film 35 36b and 36c are disposed to overlap with the photodiode 31, and the planarization layer 37 is disposed on the green, blue, and red color filters 36a, 36b, and 36c. The micro lens 38 overlaps with the green, blue, and red color filters 36a, 36b, and 36c, respectively. In addition, the notch filter 39 is interposed between the OCM (Over Coating Material) film 40 under the blue color filter 39, and the notch filter 39 is a kind of bandpass filter and has a special wavelength of light. 4, the notch filter 39 includes a pair formed by stacking the PE-nitride film 39a and the oxide film 39b.
따라서, 굴절율이 2.01인 PE-질화막(39a)과 굴절율이 1.488인 산화막(39b)이 적층되어 도 5에 도시된 바와 같은 분광특성을 나타내는 바, 실험상 PE-질화막(39a)과 산화막(39b)의 두께를 각각 0.0622㎛(±10%)와 0.085㎛(±10%)으로 하며, 이들이 이루는 쌍이 10층일 때 가장 효과적인 분광특성을 나타내는 바, 0.5㎛ 기준파장의 QWRS(Quarter Wavelength Reflector Stack)이다.Therefore, the PE-nitride film 39a having a refractive index of 2.01 and the oxide film 39b having a refractive index of 1.488 are stacked to exhibit spectral characteristics as shown in FIG. 5. Experimentally, the PE-nitride film 39a and the oxide film 39b are experimentally shown. The thickness of is 0.0622㎛ (± 10%) and 0.085㎛ (± 10%), respectively, and the most effective spectral characteristics when the pair is made of 10 layers, QWRS (Quarter Wavelength Reflector Stack) of 0.5㎛ reference wavelength.
도 6은 전술한 본 발명의 일실시예에서 사용한 노치 필터에 의해 분광특성이 개선되어 G와 B의 분광영역이 오버랩되는 부분을 최소화할 수 있음을 알 수 있다.FIG. 6 shows that the spectral characteristics are improved by the notch filter used in the above-described embodiment of the present invention, thereby minimizing a portion where the spectral regions of G and B overlap.
한편, 전술한 본 발명의 일실시예에서는 마이크로렌즈가 볼록 형성인 것을 그 일예로 하였으나, 오목 형상인 경우에도 적용이 가능하다.Meanwhile, in the above-described embodiment of the present invention, the microlens has a convex formation as an example. However, the microlens may be applied in a concave shape.
전술한 본 발명은, 청색 칼라 필터 하부에 노치 필터를 추가 배치함으로써, 청색과 녹색의 분광특성상 오버랩되는 부분을 최소화하여 순수 신호 성분의 비율을 증가시켜 이미지 센서의 칼라 구현 능력을 향상시킬 수 있음을 실시예를 통해 알아 보았다.According to the present invention, the notch filter is further disposed below the blue color filter, thereby minimizing the overlapped portion due to the spectral characteristics of blue and green, increasing the ratio of pure signal components, thereby improving the color realization capability of the image sensor. It was found through the examples.
본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위 내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
상술한 본 발명은, 이미지센서의 칼라 구현 능력을 향상시킬 수 있어, 궁극적으로 이미지센서의 성능을 크게 향상시킬 수 있는 탁월한 효과를 기대할 수 있다.The present invention described above can improve the color implementation ability of the image sensor, it can be expected to have an excellent effect that can ultimately greatly improve the performance of the image sensor.
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| KR100672994B1 (en) * | 2005-01-28 | 2007-01-24 | 삼성전자주식회사 | Image Sensor And Method Of Fabricating The Same |
| US7253018B2 (en) | 2004-07-15 | 2007-08-07 | Dongbu Electronics Co., Ltd. | CMOS image sensor and method for fabricating the same |
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| JP3003597B2 (en) * | 1996-11-18 | 2000-01-31 | 日本電気株式会社 | Solid-state imaging device |
| KR100540557B1 (en) * | 1999-12-28 | 2006-01-10 | 매그나칩 반도체 유한회사 | Method for fabricating image sensor with improved light transmittance |
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| US7598554B2 (en) | 2004-07-15 | 2009-10-06 | Dongbuanam Semiconductor Inc. | CMOS image sensor and method for fabricating the same |
| KR100672994B1 (en) * | 2005-01-28 | 2007-01-24 | 삼성전자주식회사 | Image Sensor And Method Of Fabricating The Same |
| US7493713B2 (en) | 2005-01-28 | 2009-02-24 | Samsung Electronics Co., Ltd. | Image sensor and related method of fabrication |
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