KR20030045385A - Unit for sensing gas line get stopped up of semiconductor production device - Google Patents

Abstract

PURPOSE: A device for sensing gas line get stopped up of a semiconductor manufacturing equipment is provided to be capable of reducing the failure of a semiconductor device by previously sensing the get stopped up of an injection valve and a gas line. CONSTITUTION: A plurality of air vent valves(20,22,24) are installed at a plurality of lines branched from a gas supply line(34) for measuring the pressure of the lines, respectively. A plurality of injection valves(26,28,30) are installed at the rear portions of the air vent valves for mixing carrier gas with TEB(Tri Ethyl Borate), TEOS(Tetra Ethyl Ortho Silicate), and TEPO(Tri Ethyl Phosphine Oxide), respectively and then supplying gases after gasifying the mixed material. The gasified gases supplied from the injection valves are measured with a manometer(36). An interlock signal is generated from a controller(38) when the result falls short of a predetermined pressure for a predetermined time.

Description

Gas line clogging detection device for semiconductor manufacturing facilities {UNIT FOR SENSING GAS LINE GET STOPPED UP OF SEMICONDUCTOR PRODUCTION DEVICE}

The present invention relates to a gas supply apparatus of a semiconductor manufacturing apparatus, and more particularly, to a gas line clogging detecting apparatus for detecting a gas line of a gas supply apparatus in advance in a semiconductor manufacturing apparatus.

In general, in the manufacture of semiconductor electronic components, it is necessary to encapsulate the components inside the glass or to use the glass as an interlayer dielectric film. The glass layer is usually a SiO 2 layer formed on the surface of the wafer using chemical vapor deposition (CVD). As industrial needs have increased, there has been a need to develop improved glass layers for laminating semiconductor surfaces during processing to further refine circuit patterns and increase circuit density. Of particular interest is the flatness of semiconductor substrates, which have become more important as circuit density and high precision circuit patterns become finer. In the early days of forming a glass layer on a semiconductor wafer, a SiO 2 layer was used as the glass material. By adding dopants such as boron and / or phosphorus to the glass to improve the oxide glass layer, the dopant lowers its melting point, allowing the oxide glass layers to reheat, softening the glass and reflowing the semiconductor device. A flat surface was formed on top. However, as the need for circuit densities and fine circuit patterns grows, oxide glass can be filled to fill even smaller gaps above the surface of the semiconductor device within the oxide glass layer without voids or bubbles. It was recognized that it was important to form and process thin films. Boro phosphosilicate glass (BPSG) is currently used as an interlevel dielectric layer to fill void-free structures with an aspect ratio of less than 6: 1 and as narrow as 0.1 micron. To meet this, typically a BPSG layer is deposited and then reflowed in the glass transition temperature range of about 800 to 850 ° C. Glass transition temperature is an important property of glass, and it is desirable that the reflow temperature be as low as possible to perform an effective process while avoiding the effect of temperature damage on the semiconductor wafer during the processing process. Usually in an oxygen atmosphere in a carrier gas, tetraethyl ortho silicate (TEOS), tri methyl phosphate (TMP) or phosphine (PH3) and tri methyl borate (TMB) or triethyl borate (TEB), preferably with some ozone The boron and phosphorus doped silicon oxide layer (BPSG) is prepared by reacting in a gaseous state. The process can be carried out using a plasma arc process or a somewhat lower pressure process at atmospheric pressure with ozone (temperature 350-600 ° C.) or at higher temperatures (eg 700-850 ° C.). . Higher pressure processes are conjoint in the reaction material when the pressure is 50 to 760 torr (if ozone is contained), the temperature is 400 to 600 ° C., the pressure is 1 to 10 torr and the temperature is 350 to 480 ° C. Low temperature processes such as deposition of BPSG by oxidation are used. Alternatively, a high temperature deposition process may be used that uses a low pressure of about 0.5 to 5 Torr and is performed at a temperature in the range of about 700 to 850 ° C.

AMT GIGAFILL facility as shown in Figure 1 used to proceed such a BPSG process is a carrier gas N2 or helium (He) is introduced into the gas supply line 18, triethyl borate (TEB), which is a liquid chemical (CHEMICAL), Tetraethylorthosilicate (TEOS) and TEP0 are fed together to chamber 16 via TEB injection valve 10, TEOS injection valve 12, TEOP injection valve 14.

Since the gas supply device uses liquid chemicals, triethyl borate (TEB), tetraethylortho silicate (TEOS), and TEPO, the chemical is hardened and the holes and gas lines of the injection valve are clogged. When the injection valve, gas line, etc., which vaporize the chemical is blocked by contamination, chemical flow hunting is induced, and the membrane having a high wet etch rate during initial BPSG-3 membrane depot. There was a problem that the defect is formed.

Accordingly, an object of the present invention is to provide a gas line clogging detection device for preventing the occurrence of defects by detecting the clogging state of the injection valve and the gas line in advance during the BPSG process in the semiconductor manufacturing facilities to solve the above problems.

1 is a configuration diagram of a gas supply device of the AMT GIGAFILL facility used to proceed the BPSG process

2 is a block diagram of a gas line blockage detecting apparatus of a gas supply apparatus of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

3 is a control flowchart for checking pressure according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

10: TEB Injection Valve 12: TEOS Injection Valve

14: TEPO injection valve 16: chamber

18, 34: gas supply line 20, 22, 24: first to third air vent valve

26: TEB Injection Valve 28: TEOS Injection Valve

30: TEPO injection valve 36: pressure gauge

38: controller

In the gas line clogging detection device of the semiconductor manufacturing equipment of the present invention for achieving the above object, a plurality of air vent valves installed in a plurality of lines branched from the gas supply line to open and close so as to measure the pressure of each line And a plurality of injection valves respectively provided at rear ends of the plurality of air vent valves to mix and vaporize the carrier gas, TEB, TEOS, and TEPO, respectively, and to measure the pressure of the gas vaporized from the plurality of injection valves. And a controller for generating an interlock when the pressure measured by the pressure gauge does not reach a predetermined pressure for a predetermined time.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

2 is a block diagram of a gas line blockage detecting apparatus of a gas supply apparatus of a semiconductor manufacturing apparatus according to an exemplary embodiment of the present invention.

First to third air vent valves 20, 22, and 24 installed on three lines branched from the gas supply line 34 to open and close to measure pressure of each line, and the first air vent valves; (20) is installed in the rear end of the TEB injection valve 26 and the carrier gas and TEB to mix and vaporize the output and the second air vent valve 22 is installed at the rear end of the carrier gas and TEOS to mix and vaporize A TEPO injection valve (30) to be output, a TEPO injection valve (30) installed at the rear end of the third air vent valve (24) to mix and vaporize the carrier gas and TEPO, and to output the TEB injection valve (26), A chamber 32 for applying a vaporized gas from the TEOS injection valve 28 and the TEPO injection valve 30 to perform the BPSG process, the TEB injection valve 26, the TEOS injection valve 28, and the TEPO injection valve ( Pressure gauge 36 for measuring the pressure of the gas vaporized from 30, and from the pressure gauge 36 Receiving a specified pressure is composed of a controller 38, which occurs when the interlocking (INTERLOCK) fails to reach the predetermined pressure for a set period of time.

3 is a control flowchart for checking pressure according to an embodiment of the present invention.

With reference to FIGS. 2 to 3 described above will be described in detail the operation according to the embodiment of the present invention.

Carrier gases N2 and He are supplied to the gas supply line 34, and TEB, TEOS, and TEPO are supplied to the TEB injection valve 26, the TEOS injection valve 28, and the TEPO injection valve 30, respectively. At this time, the TEB injection valve 26 is installed at the rear end of the first air vent valve 20 to mix and vaporize the carrier gas and the TEB to supply to the chamber 32. The TEOS injection valve 28 is installed at the rear end of the second air vent valve 22 to mix and vaporize the carrier gas and TEOS to supply to the chamber 32. The TEPO injection valve 30 is installed at the rear end of the third air vent valve 24 to mix and vaporize the carrier gas and TEPO to supply it to the chamber 32. The chamber 32 applies the gas vaporized from the TEB injection valve 26, the TEOS injection valve 28, and the TEPO injection valve 30 to perform a BPSG process. The gas line or injection valve of the gas supply system in the process of this BPSG process should not be blocked by contamination. Referring to Fig. 3, the operation of checking the blocked state of the gas supply device or the injection valve of the gas supply device,

First, in step 101, N2 and He, which are carrier gases, are supplied to the gas supply line 34, and TEB, TEOS, and TEPO are supplied to the TEB injection valve 26, the TEOS injection valve 28, and the TEPO injection valve 30, respectively. do. Then, in step 102, the controller 38 checks whether the TEB check mode is used, and proceeds to step 103 when the TEB check mode is used. In step 103, an open signal for opening the first air vent valve 20 is output, and a close signal for closing the second and third air belt valves 22 and 24 is output. It is applied to the first to third air vent valve (20, 22, 24), respectively. Thereafter, in step 108, the controller 38 checks whether the set time has elapsed. If the set time has elapsed, the controller 38 proceeds to step 109. In step 109, if the set pressure is detected from the pressure gauge 36 is detected and the set pressure is detected, the process proceeds to step 111 to proceed with the normal process, and if the set pressure is not detected, proceeds to step 110. In step 110, the controller 38 generates an interlock to clean the first air vent valve 20 or the gas line to remove the blocked state.

In step 102, if the TEB check mode is not present, the controller 38 proceeds to step 104 and the controller 38 checks whether the TEOS check mode is used. In step 105, an open signal for opening the second air vent valve 22 is output, and a close signal for closing the first and third air belt valves 20 and 24 is output to output the first to third air vents. To the valves 20, 22 and 24, respectively. Thereafter, in step 108, the controller 38 checks whether the set time has elapsed. If the set time has elapsed, the controller 38 proceeds to step 109. In step 109, if the set pressure is detected from the pressure gauge 36 is detected and the set pressure is detected, the process proceeds to step 111 to proceed with the normal process, and if the set pressure is not detected, proceeds to step 110. In step 110, the controller 38 generates an interlock to clean the second air vent valve 22 or the gas line to remove the blocked state.

In step 104, if the TEOS check mode is not selected, the controller 38 proceeds to step 106 and the controller 38 checks whether the TEPO check mode is used. In step 105, an open signal for opening the third air vent valve 24 is output, and a close signal for closing the first and second air belt valves 20 and 22 is output to output the first to third air vents. To the valves 20, 22 and 24, respectively. Thereafter, in step 108, the controller 38 checks whether the set time has elapsed. If the set time has elapsed, the controller 38 proceeds to step 109. In step 109, if the set pressure is detected from the pressure gauge 36 is detected and the set pressure is detected, the process proceeds to step 111 to proceed with the normal process, and if the set pressure is not detected, proceeds to step 110. In step 110, the controller 38 generates an interlock to clean the third air vent valve 24 or the gas line to remove the blocked state.

In an embodiment of the present invention, the pressure gauge 36 is installed at the rear end of the TEB injection valve 26, the TEOS injection valve 28, and the TEPO injection valve 30, but is installed in the MFC (MASS FLOW CONTROLLER) of the gas supply device. The pressure can also be measured.

As described above, the present invention provides an air vent valve in front of the TEB injection valve 26, the TEOS injection valve 28, and the TEPO injection valve 30 in the gas supply device of the semiconductor manufacturing equipment. According to the opening and closing, the pressure of each of the TEB injection valve 26, the TEOS injection valve 28, and the TEPO injection valve 30 is measured, and when the set pressure is not reached, it is determined that the corresponding injection valve is blocked. Detecting clogging of gas lines or injection valves has the advantage of reducing wafer losses and improving facility utilization.

Claims (3)

In the gas line clogging detection device of a semiconductor manufacturing facility, A plurality of air vent valves respectively installed in a plurality of lines branched from the gas supply line and opened and closed to measure pressure of each line; A plurality of injection valves respectively installed at rear ends of the plurality of air vent valves to mix and vaporize the carrier gas and TEB, TEOS, and TEPO; A pressure gauge for measuring the pressure of the gas vaporized from the plurality of injection valves, Gas line blockage detection device of a semiconductor manufacturing equipment, characterized in that it comprises a controller for generating an interlock when a predetermined pressure is not reached for a predetermined time in response to the pressure measured from the pressure gauge. The method of claim 1, The plurality of air vent valve, the gas line clogging detection device of the semiconductor manufacturing equipment, characterized in that three The method of claim 2, The plurality of injection valves, the TEB injection valve 26, TEOS injection valve 28, the gas line clogging detection apparatus of the semiconductor manufacturing equipment, characterized in that the TEPO injection valve.