KR20030037883A - Method of forming microlens for image sensor - Google Patents
Method of forming microlens for image sensor Download PDFInfo
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- KR20030037883A KR20030037883A KR1020010068976A KR20010068976A KR20030037883A KR 20030037883 A KR20030037883 A KR 20030037883A KR 1020010068976 A KR1020010068976 A KR 1020010068976A KR 20010068976 A KR20010068976 A KR 20010068976A KR 20030037883 A KR20030037883 A KR 20030037883A
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract 1
- 230000036211 photosensitivity Effects 0.000 abstract 1
- 206010034960 Photophobia Diseases 0.000 description 5
- 208000013469 light sensitivity Diseases 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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Abstract
Description
본 발명은 이미지 센서 기술에 관한 것으로,특히 이미지 센서의 마이크로 렌즈 형성방법에 관한 것이다.The present invention relates to image sensor technology, and more particularly to a method for forming a micro lens of the image sensor.
이미지 센서는 빛을 감지하는 광감지 부분과 감지된 빛을 전기적 신호로 처리하여 데이터화하는 로직회로 부분으로 구성되어 있다. 또한, 광감도를 높이기 위하여 전체 이미지 센서 소자에서 광감지 부분의 면적이 차지하는 비율(fill factor)을 크게 하려는 노력을 진행하고 있으나, 근본적으로 로직회로 부분을 제거할 수 없기 때문에 제한된 면적하에서 이러한 노력에는 한계가 있다.The image sensor is composed of a light sensing part that detects light and a logic circuit part that processes the detected light into an electrical signal to make data. In addition, although efforts are made to increase the fill factor of the area of the light sensing portion of the entire image sensor element in order to increase the light sensitivity, this effort is limited under a limited area since the logic circuit portion cannot be removed. There is.
따라서, 광감도를 높이기 위하여 광감지 부분 이외의 영역으로 입사하는 빛의 경로를 변경하여 광감지 부분으로 모아주기 위하여 마이크로 렌즈를 적용하고 있다.Therefore, in order to increase the light sensitivity, a microlens is applied to change the path of light incident to a region other than the light sensing portion and collect the light path.
그러나, 이미지 센서의 화소가 정방형이 아닌 비정방형인 경우, 마이크로 렌즈의 단축으로 입사되는 빛과 장축으로 입사되는 빛의 초점(focusing point) 거리가 서로 상이하여 초점차가 발생한다. 즉, 장축으로 입사되는 빛의 초점이 단축으로 입사되는 빛의 초점보다 깊기 때문에, 단축에 초점을 맞추게 되면 장축의 초점이 맞지 않게 되고, 장축에 초점을 맞추게 되면 단축의 초점이 맞지 않게 되는 문제가 발생한다. 이에 따라, 빛에 대한 전하 발생량이 감소되어 이미지 센서의 광감도 특성이 저하된다.However, when the pixels of the image sensor are non-square rather than square, a focal difference occurs because the focusing point distances of light incident on the short axis of the microlens and light incident on the long axis are different from each other. That is, since the focus of light incident on the long axis is deeper than the focus of light incident on the short axis, when the short axis is focused, the long axis is not in focus, and when the long axis is focused, the short axis is not in focus. Occurs. As a result, the amount of charge generation to light is reduced, thereby reducing the light sensitivity characteristic of the image sensor.
본 발명은 상술한 바와 같은 종래의 문제점을 해결하기 위한 것으로, 비정방형의 화소를 갖는 이미지 센서에서 마이크로 렌즈의 장축 및 단축으로 입사되는 빛의 초점차를 최소화하여 광감도를 향상시킬 수 있는 이미지 센서의 마이크로 렌즈 형성방법을 제공하는데 그 목적이 있다.The present invention is to solve the conventional problems as described above, in the image sensor having a non-square pixel of the image sensor that can improve the light sensitivity by minimizing the focus difference of the light incident on the long axis and short axis of the micro lens It is an object of the present invention to provide a microlens forming method.
도 1 내지 도 3은 본 발명의 실시예에 따른 이미지 센서의 마이크로 렌즈 형성방법을 설명하기 위한 단면도로서, 도 1 내지 도 3에서1 to 3 are cross-sectional views illustrating a method for forming a micro lens of an image sensor according to an exemplary embodiment of the present invention.
(a)는 화소의 단축(x) 방향에 따른 각각의 단면도이고,(a) is a cross sectional view taken along the short axis (x) direction of the pixel,
(b)는 화소의 장축(y) 방향에 따른 각각의 단면도.(b) is each sectional drawing along the major axis y direction of a pixel.
도 4 및 도 5는 본 발명의 실시예에 따른 마이크로 렌즈용 제 1 및 제 2 마스크의 평면도.4 and 5 are plan views of first and second masks for a microlens according to an embodiment of the present invention;
※ 도면의 주요부분에 대한 부호의 설명※ Explanation of code for main part of drawing
10 : 반도체 기판11 : 수광소자10 semiconductor substrate 11: light receiving element
20 : 제 1 평탄화막21 : 캡핑 산화막20 first planarization film 21 capping oxide film
22 : 제 2 평탄화막M1 : 제 1 마이크로 렌즈22: second planarization film M1: first micro lens
M2 : 제 2 마이크로 렌즈100 : 제 1 포토마스크M2: second microlens 100: first photomask
200 : 제 2 포토마스크200: second photomask
상기 본 발명의 목적을 달성하기 위하여, 본 발명에 따른 이미지 센서의 마이크로 렌즈 형성방법은 소정의 공정이 완료된 기판 상에 제 1 평탄화막을 형성하는 단계; 제 1 평탄화막 상의 상기 화소의 장축방향의 가장자리 부분을 제외한 영역에 볼록형상의 구면을 갖는 정방형의 제 1 마이크로 렌즈를 형성하는 단계; 제 1 마이크로 렌즈를 덮도록 기판 상에 캡핑층을 형성하는 단계; 캡핑층 상에 제 1 마이크로 렌즈의 볼록부가 노출되도록 제 2 평탄화막을 형성하는 단계; 및 장축방향의 가장자리 부분에 제 1 마이크로 렌즈와 소정부분 오버랩하는 제 2 마이크로 렌즈를 형성하는 단계를 포함한다.In order to achieve the object of the present invention, a method of forming a micro lens of the image sensor according to the present invention comprises the steps of forming a first planarization film on a substrate having a predetermined process; Forming a square first micro lens having a convex spherical surface in a region excluding an edge portion in the major axis direction of the pixel on the first planarization film; Forming a capping layer on the substrate to cover the first micro lens; Forming a second planarization film to expose the convex portion of the first micro lens on the capping layer; And forming a second micro lens overlapping the first micro lens by a predetermined portion at the edge portion in the long axis direction.
여기서, 제 1 마이크로 렌즈를 형성하는 단계는 제 1 평탄화막 상에 제 1 포토레지스트막을 도포하는 단계; 제 1 포토레지스트막을 화소의 장축방향의 가장자리를 제외하고 화소의 중앙영역을 덮는 정방형의 제 1 포토마스크를 이용하여 노광 및 현상하는 단계; 및 제 1 포토레지스트막을 열처리하여 플로우시키는 단계를 포함하고, 제 2 마이크로 렌즈를 형성하는 단계는 기판 전면 상에 제 2 포토레지스트막을 도포하는 단계; 제 2 포토레지스트막을 볼록부의 주위에만 남도록 에치백하는 단계; 제 2 포토레지스트막을 상기 장축방향의 가장자리 부분만을 덮는 제 2 포토마스크를 이용하여 노광 및 현상하는 단계; 및 제 2 포토레지스트막을 열처리하여 플로우시키는 단계를 포함한다.The forming of the first microlens may include applying a first photoresist film on the first planarization film; Exposing and developing the first photoresist film using a square first photomask covering a central region of the pixel except the edge in the long axis direction of the pixel; And heat treating and flowing the first photoresist film, wherein forming the second micro lens comprises applying a second photoresist film on the entire surface of the substrate; Etching back the second photoresist film to remain only around the convex portion; Exposing and developing a second photoresist film using a second photomask that covers only the edge portion in the major axis direction; And heat treating and flowing the second photoresist film.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 설명한다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.
도 1 내지 도 3은 본 발명의 실시예에 따른 이미지 센서의 마이크로 렌즈 형성방법을 설명하기 위한 단면도로서, 도 1 내지 도 3의 (a)는 화소의 단축(x; 도 4 참조)방향에 따른 단면도이고, (b)는 화소의 장축(y; 도 4 참조)방향에 따른 단면도이다.1 to 3 are cross-sectional views illustrating a method of forming a microlens of an image sensor according to an exemplary embodiment of the present invention, and FIGS. 1 to 3 (a) illustrate a direction along a short axis (x; see FIG. 4) of a pixel. (B) is sectional drawing along the major axis y (refer FIG. 4) direction of a pixel.
도 1을 참조하면, 포토다이오드와 같은 수광소자(11)를 포함하는 비정방형의 화소가 구비되고 소정의 공정이 수행된 반도체 기판(10) 상에 제 1 평탄화막(20)을 형성하여 표면을 평탄한다. 그 다음, 제 1 평탄화막(20) 상에 마이크로 렌즈용 제 1 포토레지스트막을 도포하고, 도 4에 도시된 바와 같이, 장축인 y방향의 가장자리를 제외하고 화소의 중앙영역을 덮는 정방형의 제 1 포토마스크(100)를 이용하여, 상기 제 1 포토레지스트막을 노광 및 현상한 후, 큐어링과 같은 열처리 공정을 수행하여 제 1 포로테지스트막을 플로우시켜 볼록형상의 구면을 갖는 정방형의 제 1 마이크로 렌즈(M1)를 형성한다. 그 후, 제 1 마이크로 렌즈(M1)를 덮도록 기판 상부에 캡핑 산화막(21)을 형성하고, 그 상부에 제 2 평탄화막(22)을 형성한다. 그리고 나서, 에치백 공정으로 제 2 평탄화막(22)을 식각하여 제 1 마이크로 렌즈(M1)의 볼록부를 노출시킨다.Referring to FIG. 1, a surface is formed by forming a first planarization layer 20 on a semiconductor substrate 10 having a non-square pixel including a light receiving element 11 such as a photodiode and performing a predetermined process. Smooth. Next, a first photoresist film for microlenses is coated on the first planarization film 20, and as shown in FIG. After exposing and developing the first photoresist film using the photomask 100, a first micro-lens having a convex spherical surface is formed by flowing the first poresist film by performing a heat treatment process such as curing. M1) is formed. Thereafter, a capping oxide film 21 is formed on the substrate to cover the first micro lens M1, and a second planarization film 22 is formed on the capping oxide film 21. Then, the second planarization film 22 is etched by the etch back process to expose the convex portion of the first micro lens M1.
도 2를 참조하면, 노출된 제 1 마이크로 렌즈(M1)의 볼록부를 덮도록 기판 상에 마이크로 렌즈용 제 2 포토레지스트막(23)을 도포하고, 상기 볼록부의 주위에만 남도록 에치백공정으로 제 2 포토레지스트막(23)을 식각한다.Referring to FIG. 2, a second photoresist film 23 for microlenses is coated on a substrate so as to cover the exposed convex portions of the first microlens M1, and a second etchback process is performed so as to remain only around the convex portions. The photoresist film 23 is etched.
도 3을 참조하면, 도 5에 도시된 바와 같이, 장축인 y 방향의 상기 가장자리 부분만을 덮는 제 2 포토마스크(200)를 이용하여, 제 2 포토레지스트막(23)을 노광 및 현상한 후 큐어링과 같은 열처리 공정을 수행하여 플로우시켜, (b)에 도시된 바와 같이, 장축방향의 가장자리 부분에만 제 1 마이크로 렌즈(M1)와 소정부분 오버랩되는 제 2 마이크로 렌즈(M2)를 형성한다. 여기서, 제 2 마이크로 렌즈(M2)는 제 1 마이크로 렌즈(M2) 보다 큰 곡률반경을 갖도록 형성한다. 그 다음, 노출된 제 2 평탄화막(22)을 제거한다.Referring to FIG. 3, as shown in FIG. 5, the second photoresist film 23 is exposed and developed using a second photomask 200 covering only the edge portion in the y-direction, which is a long axis, and then cured. A heat treatment process such as a ring is performed to flow to form a second micro lens M2 overlapping a predetermined portion with the first micro lens M1 only at an edge portion in the long axis direction as shown in (b). Here, the second micro lens M2 is formed to have a larger radius of curvature than the first micro lens M2. Then, the exposed second planarization film 22 is removed.
즉, 도 3에 도시된 바와 같이, 마이크로 렌즈의 장축 방향의 가장자리 부분의 곡율반경이 단축방향의 곡율반경보다 크지만, 평탄화막 및 캡핑산화막에 의해 수광소자(11)와의 거리가 멀어지게 되어, 장축과 단축방향의 초점차가 최소화되고 초점이 거의 일치하게 된다.That is, as shown in FIG. 3, the radius of curvature of the edge portion in the long axis direction of the microlens is larger than the radius of curvature in the minor axis direction, but the distance from the light receiving element 11 is increased by the planarization film and the capping oxide film. The focal difference between the long axis and the short axis direction is minimized and the focal point is almost coincident.
본 발명은 상기 실시예에 한정되지 않고, 본 발명의 기술적 요지를 벗어나지 않는 범위내에서 다양하게 변형시켜 실시할 수 있다.The present invention is not limited to the above embodiments, and various modifications can be made without departing from the technical spirit of the present invention.
이상에서 설명한 바와 같이, 본 발명에 의하면, 비정방형 화소를 갖는 이미지 센서에서, 평탄화막 및 캡핑산화막을 사이에 두고 장축방향의 마이크로 렌즈를2개의 적층구조로 형성하므로, 단축방향과 장축방향에서의 초점이 거의 일치하게 되어 빛에 대한 전하 발생량이 감소됨으로써, 결국 이미지 센서의 광감도 특성을 향상시킬 수 있는 효과를 얻을 수 있다.As described above, according to the present invention, in the image sensor having non-square pixels, the microlenses in the long axis direction are formed in two stacked structures with the planarization film and the capping oxide film interposed therebetween, Since the focal point is almost coincident with the amount of charge generated to the light, the effect of improving the light sensitivity of the image sensor can be obtained.
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KR100349644B1 (en) * | 1999-11-19 | 2002-08-22 | 주식회사 하이닉스반도체 | Method for fabricating oxide microlens and method for fabricating image sensor by using the same |
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US7842980B2 (en) | 2004-11-29 | 2010-11-30 | Samsung Electronics Co., Ltd. | Image sensor microlens structures and methods of forming the same |
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