KR20030037683A - Method for valuating particle counting efficiency by using scanning electron microscopy - Google Patents

Method for valuating particle counting efficiency by using scanning electron microscopy Download PDF

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KR20030037683A
KR20030037683A KR1020010069239A KR20010069239A KR20030037683A KR 20030037683 A KR20030037683 A KR 20030037683A KR 1020010069239 A KR1020010069239 A KR 1020010069239A KR 20010069239 A KR20010069239 A KR 20010069239A KR 20030037683 A KR20030037683 A KR 20030037683A
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wafer
particle
particles
scanning electron
counting efficiency
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KR100439574B1 (en
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김재동
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동부전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

PURPOSE: A method for estimating particle counting efficiency using an SEM(Scanning Electron Microscopy) apparatus is provided to be capable of finding the particle counting error of a WSS(Wafer Surface Scanner) by comparing the counting result of the WSS with that of the SEM apparatus. CONSTITUTION: Particles are deposited on a semiconductor wafer as much as the predetermined number(301). The deposited particles of the semiconductor wafer are designated to the coordinates system, respectively(302). After loading the semiconductor wafer in an SEM(Scanning Electron Microscopy) apparatus, the number of the particles of the semiconductor wafer is checked by using electron beam(303). Then, the semiconductor wafer is loaded in a WSS(Wafer Surface Scanner)(304). The particle counting efficiency is estimated by comparing the number of the particles checked by the WSS with that checked by the SEM apparatus(305).

Description

주사전자현미경을 이용한 파티클 계수 효율 평가방법{METHOD FOR VALUATING PARTICLE COUNTING EFFICIENCY BY USING SCANNING ELECTRON MICROSCOPY}Particle counting efficiency evaluation method using scanning electron microscope {METHOD FOR VALUATING PARTICLE COUNTING EFFICIENCY BY USING SCANNING ELECTRON MICROSCOPY}

본 발명은 주사전자현미경(scanning electron microscopy : SEM)을 이용한 파티클 계수 효율 평가방법에 관한 것으로, 특히 웨이퍼 표면 스캐너(wafer surface scanner : WSS) 장비에 의해 계수(counting)되는 개수와 실제 웨이퍼 위의 잔재하는 파티클 개수와의 오차를 없애 반도체 제조 공정의 수율 향상에 많은 영향을 줄 수 있도록 하는 방법에 관한 것이다.The present invention relates to a particle counting efficiency evaluation method using a scanning electron microscopy (SEM), in particular the number counted by the wafer surface scanner (WSS) equipment and the residue on the actual wafer The present invention relates to a method of eliminating an error with the number of particles to greatly affect the yield improvement of a semiconductor manufacturing process.

통상적으로, 웨이퍼 표면 스캐너(WSS) 장비는 반도체 소자 제조과정에서 고도로 청정한 작업환경 내부에서 정밀한 작업제어에 의해서 진행되나 여러 가지 원인에 의해서 발생되는 웨이퍼 위의 파티클 개수를 검사하는 장비인 것이다.In general, wafer surface scanner (WSS) equipment is a device that inspects the number of particles on a wafer generated by various causes while being processed by precise work control in a highly clean working environment during semiconductor device manufacturing.

이와 같이, 웨이퍼 위에 발생되는 파티클 크기가 매우 미세한 관계로 인하여 사람의 눈으로는 식별이 불가능하기 때문에, WSS 장비에 의해 계수(counting)되는 개수와 실제 웨이퍼 위의 잔재하는 파티클 개수간에는 많은 오차가 있어 반도체 제조 공정의 수율 저하에 많은 영향을 주게 되는 문제점이 있었다.As such, since the size of particles generated on the wafer is very small, it cannot be identified by the human eye, and there is a large error between the number counted by the WSS device and the number of particles remaining on the actual wafer. There was a problem that a lot of influence on the yield reduction of the semiconductor manufacturing process.

따라서, 본 발명은 상술한 문제점을 해결하기 위해 안출된 것으로서, 그 목적은 웨이퍼 표면 스캐너(WSS) 장비에 주사전자현미경(SEM)을 적용시켜 WSS 장비에 의해 계수(counting)되는 개수와 실제 웨이퍼 위의 잔재하는 파티클 개수와의 오차를 없애 반도체 제조 공정의 수율 향상에 많은 영향을 줄 수 있도록 하는 SEM을 이용한 파티클 계수 효율 평가방법을 제공함에 있다.Accordingly, the present invention has been made to solve the above-described problems, the object of which is to apply the scanning electron microscope (SEM) to the wafer surface scanner (WSS) equipment by counting (counting) by the WSS equipment and the actual wafer on The present invention provides a method for evaluating particle counting efficiency using SEM that eliminates an error from the number of particles remaining in the wafer and thus greatly affects the yield improvement of a semiconductor manufacturing process.

상술한 목적을 달성하기 위하여 본 발명에서 SEM을 이용한 파티클 계수 효율 평가방법은 웨이퍼 위에 폴리스티렌 라텍스 스피어(PSL) 파티클을 임의의 개수만큼 증착(deposition)하는 단계; 증착된 파티클 각각에 대하여 좌표화하는 단계; 파티클 각각의 좌표 값을 주사전자현미경(SEM)에 로딩(loading)시키고, 전자빔을 이용하여 웨이퍼 위에 증착된 폴리스티렌 라텍스 스피어(PSL) 파티클의 입자 수량을 산출하는 단계; 산출된 입자 수량이 파악된 웨이퍼를 웨이퍼 표면 스캐너(wafersurface scanner) 장비에 로딩(loading)시켜 산출된 파티클 수와 주사전자현미경(SEM)에 의해 산출된 실제 웨이퍼 위의 파티클 수를 비교하여 파티클 계수 효율을 평가하는 단계를 포함하는 것을 특징으로 한다.In order to achieve the above object, the particle counting efficiency evaluation method using the SEM in the present invention comprises the steps of depositing an arbitrary number of polystyrene latex sphere (PSL) particles on the wafer; Coordinate for each of the deposited particles; Loading the coordinate values of each particle into a scanning electron microscope (SEM) and calculating particle quantities of polystyrene latex sphere (PSL) particles deposited on the wafer using an electron beam; Particle counting efficiency by comparing the number of particles calculated by loading the wafer with the calculated particle quantity into a wafer surface scanner and the number of particles on the actual wafer calculated by the scanning electron microscope (SEM) It characterized in that it comprises a step of evaluating.

도 1은 본 발명에 따른 주사전자현미경을 이용한 파티클 계수 효율 평가방법을 설명하기 위한 도면이며,1 is a view for explaining a particle counting efficiency evaluation method using a scanning electron microscope according to the present invention,

도 2는 도 1에 도시된 웨이퍼 위에 증착된 파티클 각각에 대하여 좌표화한 도면이며,FIG. 2 is a diagram coordinated with each particle deposited on the wafer shown in FIG. 1,

도 3은 본 발명에 따른 주사전자현미경을 이용한 파티클 계수 효율 평가방법을 설명하기 위한 흐름도이다.3 is a flowchart illustrating a particle counting efficiency evaluation method using a scanning electron microscope according to the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

S1 : 웨이퍼 S2 : PSL 파티클S1: Wafer S2: PSL Particle

이하, 첨부된 도면을 참조하여 본 발명에 따른 실시예를 상세하게 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명에 따른 주사전자현미경(scanning electron microscopy : SEM)을 이용한 파티클 계수 효율 평가방법을 설명하기 위한 도면으로서 , 반도체 가공을 위한 웨이퍼(S1)와, 웨이퍼(S1) 위에 잔재하는 다수의 폴리스티렌 라텍스 스피어(polystyrene latex spheres : PSL) 파티클(particle)(S2)을 포함한다.1 is a view for explaining a particle counting efficiency evaluation method using a scanning electron microscopy (SEM) according to the present invention, a wafer (S1) for semiconductor processing and a plurality of residues remaining on the wafer (S1) Polystyrene latex spheres (PSL) particles (S2).

도 3의 흐름도를 참조하면, 상술한 구성을 바탕으로, 본 발명에 따른 SEM을 이용한 파티클 계수 효율을 평가하는 과정에 대하여 보다 상세하게 설명한다.Referring to the flowchart of FIG. 3, a process of evaluating particle counting efficiency using the SEM according to the present invention will be described in more detail based on the above-described configuration.

먼저, 반도체 가공을 위한 웨이퍼(S1) 위에 PSL 파티클(S2)을 임의의 개수(예로, 100개)만큼 증착(deposition)한다(단계 301).First, an arbitrary number (for example, 100) of PSL particles S2 are deposited on the wafer S1 for semiconductor processing (step 301).

PSL 파티클(S2)이 웨이퍼(S1) 위에 증착된 후, 결점 검사 장비(KLA 2139)를 이용하여 도 2에 도시된 바와 같이, 증착된 파티클(S2) 각각에 대하여 좌표화한다(단계 302).After the PSL particles S2 are deposited on the wafer S1, the defect inspection equipment KLA 2139 is used to coordinate each of the deposited particles S2 as shown in FIG. 2 (step 302).

이후, 좌표화된 파티클(S2)을 갖는 웨이퍼(S1)를 SEM에 로딩(loading)시키고, 전자빔을 이용하여 웨이퍼(S1) 위에 증착된 PSL 파티클의 입자 수량을 산출한다(단계 303). 여기서, 주사전자현미경(SEM)은 전자가 표본을 통과하는 것이 아니라 초점이 잘 맞추어진 전자 빔(electron beam)을 표본의 표면에 주사하며, 주사된 전자선이 표본의 한 점에 집중되면 일차 전자만 굴절되고 표면에서 발생된 이차전자는 검파기(detector)에 의해 수집되며, 그 결과 생긴 신호들이 여러 점으로부터 모여들어 음극선관(cathode ray tube)에 상을 형성하게 하는 장비이다.Thereafter, the wafer S1 having the coordinated particles S2 is loaded into the SEM, and the particle quantity of the PSL particles deposited on the wafer S1 is calculated using an electron beam (step 303). Here, the scanning electron microscope (SEM) scans a well-focused electron beam onto the surface of the sample, rather than passing the electron through the sample, and only the primary electron when the scanned electron beam is concentrated at one point of the sample. Secondary electrons, which are refracted and generated at the surface, are collected by a detector, and the resultant signals are collected from various points to form a phase in a cathode ray tube.

이어서, PSL 파티클(S2)의 입자 수량이 파악된 웨이퍼(S1)를 웨이퍼 표면 스캐너(wafer surface scanner) 장비에 로딩(loading)시킨다(단계 304).Subsequently, the wafer S1 in which the particle quantity of the PSL particles S2 is known is loaded into a wafer surface scanner device (step 304).

마지막으로, 웨이퍼 표면 스캐너(wafer surface scanner) 장비에 의해 산출된 파티클 수(웨이퍼 표면 스캐너(wafer surface scanner) 장비의 성능에 따라 파티클 수가 변동됨)와 SEM에 의해 산출된 실제 웨이퍼(S1) 위의 파티클(S2) 수를 비교하여 파티클 계수 효율을 평가한다(단계 305).Finally, the number of particles calculated by the wafer surface scanner equipment (the number of particles varies depending on the performance of the wafer surface scanner equipment) and on the actual wafer S1 calculated by the SEM. The particle counting efficiency is evaluated by comparing the number of particles S2 (step 305).

그러므로, 본 발명은 웨이퍼 표면 스캐너(WSS) 장비에 주사전자현미경(SEM)을 적용시켜 WSS 장비에 의해 계수(counting)되는 개수와 실제 웨이퍼 위의 잔재하는 파티클 개수와의 오차를 줄일 수 있도록 함으로써, 웨이퍼 표면 스캐너(WSS) 장비의 파티클 검사 오차를 규명할 수 있어 반도체 제조 공정의 수율 향상에 많은 영향을 줄 수 있는 효과가 있다.Therefore, the present invention applies a scanning electron microscope (SEM) to the wafer surface scanner (WSS) equipment to reduce the error between the number counted by the WSS equipment and the number of particles remaining on the actual wafer, Particle inspection error of the wafer surface scanner (WSS) equipment can be identified, which has an effect that can greatly affect the yield improvement of the semiconductor manufacturing process.

Claims (3)

반도체 웨이퍼 가공 시 존재하는 파티클(particle)의 계수 효율 산출방법에 있어서,In the method of calculating the particle efficiency of particles present during semiconductor wafer processing, 상기 웨이퍼 위에 폴리스티렌 라텍스 스피어(polystyrene latex spheres : PSL) 파티클을 임의의 개수만큼 증착(deposition)하는 단계;Depositing any number of polystyrene latex spheres (PSL) particles on the wafer; 상기 증착된 파티클 각각에 대하여 좌표화하는 단계;Coordinate for each of the deposited particles; 상기 파티클 각각의 좌표 값을 주사전자현미경(scanning electron microscopy : SEM)에 로딩(loading)시키고, 전자빔을 이용하여 상기 웨이퍼 위에 증착된 폴리스티렌 라텍스 스피어(PSL) 파티클의 입자 수량을 산출하는 단계;Loading the coordinate values of each particle into a scanning electron microscopy (SEM) and calculating particle numbers of polystyrene latex spheres (PSL) particles deposited on the wafer using an electron beam; 상기 산출된 입자 수량이 파악된 웨이퍼를 웨이퍼 표면 스캐너(wafer surface scanner) 장비에 로딩(loading)시켜 산출된 파티클 수와 상기 주사전자현미경(SEM)에 의해 산출된 실제 웨이퍼 위의 파티클 입자 수량을 비교하여 파티클 계수 효율을 평가하는 단계를 포함하는 것을 특징으로 하는 주사전자현미경을 이용한 파티클 계수 효율 평가방법.Compare the number of particles calculated by loading the wafer having the calculated particle quantity into a wafer surface scanner device and the number of particle particles on the actual wafer calculated by the scanning electron microscope (SEM). Particle counting efficiency evaluation method using a scanning electron microscope, characterized in that it comprises the step of evaluating the particle counting efficiency. 제 1 항에 있어서,The method of claim 1, 상기 웨이퍼 위에 증착된 파티클 각각에 대하여 결점(defect) 검사 장비인 KLA2139를 이용하여 좌표화하는 것을 특징으로 하는 주사전자현미경을 이용한 파티클 계수 효율 평가방법.Particle coefficient efficiency evaluation method using a scanning electron microscope, characterized in that for each particle deposited on the wafer coordinates using a defect inspection equipment KLA2139. 제 1 항에 있어서, 상기 파티클 계수 효율 평가는The method of claim 1, wherein the particle counting efficiency evaluation 상기 웨이퍼 표면 스캐너(wafer surface scanner) 장비의 성능 개선을 위한 것으로, 상기 비교 과정을 반복적으로 수행하여 상기 웨이퍼 표면 스캐너 장비에 의해 계수(counting)되는 개수와 실제 웨이퍼 위의 잔재하는 파티클 개수와의 오차를 없애는 것을 특징으로 하는 주사전자현미경을 이용한 파티클 계수 효율 평가방법.In order to improve the performance of the wafer surface scanner equipment, the comparison process is repeatedly performed, and an error between the number counted by the wafer surface scanner equipment and the number of particles remaining on the actual wafer. Particle counting efficiency evaluation method using a scanning electron microscope, characterized in that to remove the.
KR10-2001-0069239A 2001-11-07 2001-11-07 Method for valuating particle counting efficiency by using scanning electron microscopy KR100439574B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904087A (en) * 2019-01-14 2019-06-18 全球能源互联网研究院有限公司 A kind of detection method and device of semiconductor wafer surface granularity
KR102283019B1 (en) 2020-11-27 2021-07-28 주식회사 무성 Loop Seal damper apparatus

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* Cited by examiner, † Cited by third party
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JP2982936B2 (en) * 1993-11-25 1999-11-29 信越半導体株式会社 Particle number measurement device
KR20000018613A (en) * 1998-09-03 2000-04-06 윤종용 Method for setting reference value of particle measuring device for manufacturing semiconductor device
JP2000269286A (en) * 1999-03-16 2000-09-29 Toshiba Microelectronics Corp Specifying method for defective point of semiconductor substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904087A (en) * 2019-01-14 2019-06-18 全球能源互联网研究院有限公司 A kind of detection method and device of semiconductor wafer surface granularity
KR102283019B1 (en) 2020-11-27 2021-07-28 주식회사 무성 Loop Seal damper apparatus

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