KR20030013708A - Substrate cleaning system - Google Patents
Substrate cleaning system Download PDFInfo
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- KR20030013708A KR20030013708A KR1020010047860A KR20010047860A KR20030013708A KR 20030013708 A KR20030013708 A KR 20030013708A KR 1020010047860 A KR1020010047860 A KR 1020010047860A KR 20010047860 A KR20010047860 A KR 20010047860A KR 20030013708 A KR20030013708 A KR 20030013708A
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- South Korea
- Prior art keywords
- cleaning
- substrate
- freezing
- slurry
- granules
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 174
- 239000000758 substrate Substances 0.000 title claims abstract description 83
- 239000002002 slurry Substances 0.000 claims abstract description 59
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000002994 raw material Substances 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims description 79
- 230000008014 freezing Effects 0.000 claims description 62
- 238000007710 freezing Methods 0.000 claims description 62
- 239000008187 granular material Substances 0.000 claims description 38
- 238000004519 manufacturing process Methods 0.000 claims description 32
- 238000003860 storage Methods 0.000 claims description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 238000005469 granulation Methods 0.000 claims description 12
- 230000003179 granulation Effects 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 8
- 238000009483 freeze granulation Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 235000019441 ethanol Nutrition 0.000 claims description 6
- 230000002411 adverse Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 29
- 238000000034 method Methods 0.000 abstract description 5
- 239000007921 spray Substances 0.000 description 16
- 238000005406 washing Methods 0.000 description 16
- 239000007789 gas Substances 0.000 description 14
- 239000012159 carrier gas Substances 0.000 description 12
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 239000012530 fluid Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 210000000077 angora Anatomy 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 210000000050 mohair Anatomy 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- -1 photomasks Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
본 발명은 반도체웨이퍼, 전자디바이스기판, 액정기판, 포토마스크, 유리기판 등의 기판을 세정해서, 여기에 부착하는 파티클(기판오염원이 되는 미립자)을제거하기 위한 기판세정시스템에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate cleaning system for cleaning substrates such as semiconductor wafers, electronic device substrates, liquid crystal substrates, photomasks, and glass substrates, and removing particles (fine particles serving as substrate contamination sources) attached thereto.
반도체웨이퍼 등의 기판세정은 일반적으로, 100∼300㎛지름의 모헤어(앙고라염소털), 나일론 등을 사용한 브러시에 의해 기판표면을 닦음으로써, 기판에 부착한 파티클을 제거하는 브러시 스크러버에 의해 행해지고 있다. 그러나, 이러한 브러시 스크러버에 의한 기판세정에 있어서는, 브러시를 회전시키면서 기판표면에 밀착하고, 그 마찰력에 의해 이물을 닦아내도록 하기 때문에, 브러시끼리의 부딪침이나 기판배선의 단차에의 부딪침에 의해 기판오염원이 되는 미립자인 파티클이 발생해서 기판에 재부착하여, 기판의 세정효과를 저하시킨다.Substrate cleaning, such as semiconductor wafers, is generally performed by a brush scrubber that removes particles adhering to the substrate by wiping the surface of the substrate with a brush made of 100 to 300 µm diameter mohair (angora chlorine), nylon, or the like. . However, in the cleaning of the substrate by such a brush scrubber, the substrate is adhered to the surface of the substrate while the brush is rotated, and the foreign matter is wiped off by the frictional force. Therefore, the substrate contamination source is caused by the collision between the brushes and the step of the substrate wiring. Particles, which become fine particles, are generated and reattached to the substrate, thereby reducing the cleaning effect of the substrate.
그래서, 최근, 미세한 얼음입자를 캐리어가스에 의해 기판에 분사, 충돌시킴으로써, 기판을 세정하도록 한 아이스 스크러버가 제안되고 있다. 이러한 아이스 스크러버에 의하면, 기판을 씻어내리기 때문에 파티클이 발생, 재부착하지 않고, 기판세정을 효과적으로 행할 수 있다.In recent years, an ice scrubber has been proposed in which fine ice particles are sprayed and collided with a substrate by a carrier gas to clean the substrate. According to such an ice scrubber, since a board | substrate is wash | cleaned, a board | substrate washing | cleaning can be performed effectively, without particle | grains generate | occur | producing and reattaching.
그러나, 아이스 스크러버에 의한 기판세정에 있어서는, 얼음입자를 가스(캐리어가스)에 의해 기판에 고속으로 출돌시키기 때문에, 기판에 손상을 입힐 우려가 있다. 또, 기판에 충돌후의 얼음입자가 비산하는 동시에 제거된 파티클이 기판주변에 날려 올라가서 기판이 재오염될 우려가 있다. 이러한 파티클이 날려 올라가는 것을 방지하기 위해서는 얼음입자의 분사와 함께 기판에 순수 등에 의한 린스를 행할 필요가 있지만, 린스를 행하면 린스물에 얼음입자가 용융해서 냉열의 유효이용을 꾀할 수 없고, 러닝코스트가 증가한다라는 문제를 발생한다.However, in substrate scrubbing with an ice scrubber, ice particles are caused to rush at high speed to the substrate by gas (carrier gas), which may cause damage to the substrate. In addition, ice particles after colliding with the substrate are scattered, and the removed particles are blown around the substrate and the substrate may be recontaminated. In order to prevent these particles from blowing up, it is necessary to rinse the substrate with pure water or the like with the injection of ice particles. The problem arises.
본 발명은 이러한 아이스 스크러버에 의한 문제를 발생하지 않고, 기판을 양호하며 효과적으로 세정할 수 있는 기판세정시스템을 제공하는 것을 목적으로 하는 것이다.An object of the present invention is to provide a substrate cleaning system which can clean a substrate well and effectively without causing a problem caused by such an ice scrubber.
도 1은 본 발명에 따른 기판세정시스템의 실시형태를 나타낸 계통도이다.1 is a system diagram showing an embodiment of a substrate cleaning system according to the present invention.
(부호의 설명)(Explanation of the sign)
1:원료수(순수) 1a:분무입자(미세립)1: Raw material water (pure water) 1a: Spray particle (fine grain)
1b:동결립(얼음입자) 2:동결립제조장치1b: Copper Freezing (Ice Particles) 2: Copper Freezing Manufacturing Equipment
3:세정액 4:세정용 슬러리3: cleaning solution 4: cleaning slurry
5:세정용 슬러리제조장치 6:기판5: cleaning slurry manufacturing apparatus 6: substrate
7:세정처리실 8:캐리어가스7: Cleaning process room 8: Carrier gas
9:세정용 슬러리분사장치 10:동결립제조용기9: Slurry spraying device for cleaning 10: Copper granulation container
11:원료수공급기구 21:세정액저장용기11: Raw water supply mechanism 21: Cleaning liquid storage container
22:냉동기(냉각기구) 23:혼합교반기구22: Refrigerator (cooling mechanism) 23: Mixed stirring mechanism
24:버블링가스 34:분사총24: bubbling gas 34: injection gun
본 발명은 상기 목적을 달성하기 위해, 특히, 물을 원료로 해서 미세한 동결립을 제조하는 동결립제조장치와, 동결립제조장치로 제조된 동결립을 응고점이 물보다 낮은 액체로서 물의 응고점보다 저온으로 유지된 세정액과 혼합해서 세정용 슬러리를 제조하는 세정용 슬러리제조장치와, 기판을 유지하는 세정처리실과, 세정용 슬러리제조장치로 제조된 세정용 슬러리를 캐리어가스에 의해 가속해서 세정처리실안에 유지된 기판을 향해 분사, 충돌시키는 세정용 슬러리분사장치를 구비하는 것을 특징으로 하는 기판세정시스템을 제안하는 것이다.In order to achieve the above object, the present invention, in particular, the freezing granulation device for producing fine freezing granules with water as a raw material, and the freezing granules produced by the freeze granulation production device as a liquid having a lower freezing point than water as a lower temperature than the freezing point of water A cleaning slurry production apparatus for mixing the cleaning liquid held by the production of the cleaning slurry to produce the cleaning slurry, a cleaning processing chamber for holding the substrate, and a cleaning slurry prepared by the cleaning slurry production apparatus with a carrier gas to be retained in the cleaning processing chamber. It is proposed a substrate cleaning system comprising a cleaning slurry spraying device for spraying and colliding toward a formed substrate.
이러한 기판세정시스템에 있어서, 동결립의 원료(원료수)로서는 순수 등이 사용된다. 또 세정액으로서는 기판에 악영향을 미치지 않는 액체를 사용하는 것이 바람직하며, 예를 들면 이소프로필알콜, 메틸알콜, 에틸알콜, 아세톤, 또는 이들중 어느 하나와 물과의 혼합액을 사용하는 것이 바람직하고, 일반적으로, 이소프로필알콜 또는 에틸알콜과 물과의 혼합액을 사용하는 것이 바람직하다. 또, 세정용 슬러리에 있어서의 동결립의 함유량은 1∼20wt이다(세정액:99∼80wt%)인 것이 바람직하다.In such a substrate cleaning system, pure water or the like is used as a raw material (raw material water) of the frozen granules. As the cleaning liquid, it is preferable to use a liquid which does not adversely affect the substrate. For example, it is preferable to use isopropyl alcohol, methyl alcohol, ethyl alcohol, acetone, or a mixture of any of these and water. It is preferable to use isopropyl alcohol or a mixture of ethyl alcohol and water. Moreover, it is preferable that content of the freeze granules in a washing | cleaning slurry is 1-20 wt (washing liquid: 99-80 wt%).
또, 바람직한 실시형태에 있어서는, 동결립제조장치는 내부를 냉기상분위기로 유지된 동결립제조용기와, 이 용기내에 원료수를 미세립으로서 공급하는 원료수공급기구를 구비해서, 1∼150㎛의 구형을 이루는 동결립을 제조하도록 구성된다. 또, 세정용 슬러리제조장치는 동결립제조용기에 연통접속되어 동결립제조용기로부터 동결립이 낙하공급되는 세정액저장용기와, 이 용기내의 세정액을 -5∼-40℃로 냉각, 보온하는 냉각기구와, 세정액저장용기내의 세정액과 동결립을 혼합교반하여, 동결립을 세정액속에 균일하게 분산시키는 혼합교반기구를 구비하는 것으로 구성된다. 또한, 기판세정에 사용한 세정용 슬러리를 세정처리실로부터 세정용 슬러리제조장치(예를 들면, 세정액저장용기)에 회수하는 세정잔사회수기구를 설치하여, 동결립 내지 세정액을 재이용하도록 구성해 두는 것이 바람직하다.In a preferred embodiment, the freeze granulation production apparatus includes a freeze granulation production vessel whose interior is kept at a cold air atmosphere and a raw material water supply mechanism for supplying the raw water as fine granules in this container, and having 1 to 150 µm. It is configured to produce a spherical freeze granule of. In addition, the cleaning slurry production apparatus is connected to the freezing granulation vessel, and the storage liquid storage vessel in which the freezing grain is dropped from the freezing granulation vessel, and the cooling mechanism for cooling and keeping the cleaning liquid in the vessel at -5 to -40 ° C. And a mixing and stirring mechanism for mixing and stirring the cleaning liquid and the freezing granules in the cleaning liquid storage container to uniformly disperse the freezing granules in the cleaning liquid. In addition, it is preferable that a cleaning residual water mechanism for recovering the cleaning slurry used for cleaning the substrate from the cleaning processing chamber to the cleaning slurry manufacturing apparatus (for example, the cleaning solution storage container) is provided so as to reuse the frozen granules or the cleaning solution. Do.
이하, 본 발명의 실시형태를 도 1에 기초해서 구체적으로 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described concretely based on FIG.
이 실시형태에 있어서의 본 발명의 기판세정시스템은 도 1에 나타내는 바와 같이, 물(1)을 원료로서 미세한 동결립(1b)을 제조하는 동결립제조장치(2)와, 동결립(1b)을 세정액(3)과 혼합해서 세정용 슬러리(4)를 제조하는 세정용 슬러리제조장치(5)와, 피세정물인 반도체웨이퍼 등의 기판(6)을 유지하는 세정처리실(7)과, 세정용 슬러리(4)를 캐리어가스(8)에 의해 세정처리실(7)안에 유지된 기판(6)을 향해 분사, 충돌시키는 세정용 슬러리분사장치(9)를 구비한다.As shown in Fig. 1, the substrate cleaning system according to the present invention includes a freeze granulation manufacturing apparatus 2 for producing fine freeze granules 1b using water 1 as a raw material, and a freeze granules 1b. To a cleaning slurry production apparatus 5 for mixing the cleaning liquid 3 with the cleaning liquid 3 to produce the cleaning slurry 4, a cleaning processing chamber 7 for holding a substrate 6 such as a semiconductor wafer to be cleaned, The slurry 4 spraying apparatus 9 which sprays and collides the slurry 4 toward the board | substrate 6 hold | maintained in the washing process chamber 7 by the carrier gas 8 is provided.
동결립제조장치(2)는 냉기상분위기로 유지된 밀폐형 단열용기인 동결립제조용기(10)와, 용기(10)내에 원료수(1)(예를 들면 순수)를 미세립(1a)로서 공급하는 원료수공급기구(11)를 구비한다. 용기(10)안은 그 둘레벽상부에 설치한 스프레이노즐(12)로부터 액체질소 등의 냉매 내지 냉매가스(13)를 분출시킴으로써, 물(1)의 응고점보다 저온(예를 들면, -80℃정도)의 냉기상분위기로 유지되어 있다. 원료수공급기구(11)는 용기(10)의 천정부에 설치한 스프레이노즐(14)과, 원료수(1)를 저장하는 밀페형 원료수조(15)와, 원료수조(15)의 액상부로부터 스프레이노즐(14)로 이어진 원료수공급관(16)과, 가스탱크(17)로부터 원료수조(15)의 기상부로 이어진 가스공급관(18)을 구비해서 이루어지며, 가스공급관(18)으로부터 질소가스 등의 가압가스(18a)를 공급시킴으로써 원료수조(15)내부를 가압해서 원료수(1)를 원료수공급관(16)으로부터 스프레이노즐(14)에 가압, 공급시키고, 원료수(1)를 미세립(1a)으로서 용기(10)내에 분무식으로 공급시키도록 구성되어 있다.The freeze granulation production apparatus (2) uses a cryolip production vessel (10), which is a hermetic sealed container kept in a cold air atmosphere, and the raw water (1) (for example, pure water) in the container (10) as fine granules (1a). The raw material water supply mechanism 11 to supply is provided. In the container 10, a coolant such as liquid nitrogen or a coolant gas 13 is ejected from the spray nozzle 12 provided above the circumferential wall, thereby lowering the freezing point of the water 1 (for example, about -80 ° C). ) Is maintained in the cold atmosphere. The raw material water supply mechanism 11 includes a spray nozzle 14 installed at the ceiling of the container 10, a sealed raw material water tank 15 for storing the raw water 1, and a liquid portion of the raw water tank 15. And a gas supply pipe (18) connected to the spray nozzle (14) and a gas supply pipe (18) from the gas tank (17) to the gas phase of the raw water tank (15). The pressurized gas 18a is supplied to pressurize the inside of the raw water tank 15 to pressurize and feed the raw water 1 from the raw water supply pipe 16 to the spray nozzle 14, and to finely feed the raw water 1. As 1a, it is comprised so that the container 10 may be sprayed.
그리고, 스프레이노즐(14)로부터 분무된 미세립(1a)는 표면장력에 의해 구형의 형태로 냉매(13)와의 열교환에 의해 곧바로 동결되어, 미세한 구형의 균일지름의 동결립(얼음)(1b)이 제조된다. 이 동결립(1b)은 용기(10)내부를 역뿔모양의 저벽으로 침강해서 그 저벽중앙부에 형성된 동결립취출관(19)으로부터 용기(10)밖으로 낙하, 배출되도록 되어 있다. 또, 원료수공급관(16)에는 압력·유량조정기(20)가 설치되어 있고, 스프레이노즐(14)로부터의 분무압력을 조정할 수 있도록 되어 있다. 이 분무압력 및 스프레이노즐(14)의 분무구멍지름에 의해 분무입자(1a) 즉 동결립(1b)의 지름이 결정되지만, 일반적으로, 이러한 분무압력 등의 분무조건은 1∼150㎛의 구형의 동결립(1b)이 얻어지도록 설정해 두는 것이 바람직하다. 단, 동결립(1b)의 지름은 기판(6)의 종류에 따라 설정되지만, 일반적으로, 입경이 1㎛미만에서는 큰 파티클을 제거하기 어렵고, 반대로 입경이 150㎛을 초과하면, 미세패턴의 미세부에 충돌해서 파티클을 제거하는 능력이 저하하기 때문이다.The fine grains 1a sprayed from the spray nozzles 14 are immediately frozen by heat exchange with the refrigerant 13 in a spherical form by the surface tension, and are frozen granules (ice) 1b having a fine spherical uniform diameter. Is manufactured. This freezing lip 1b is settled inside the container 10 to the bottom wall of an inverted shape, and falls out of the container 10 from the freezing lip extraction tube 19 formed in the center of the bottom wall. In addition, the raw material water supply pipe 16 is provided with a pressure and flow rate regulator 20 so that the spraying pressure from the spray nozzle 14 can be adjusted. Although the diameter of the spray particle 1a, ie, the freezing granule 1b, is determined by the spray pressure and the spray hole diameter of the spray nozzle 14, in general, the spray conditions such as spray pressure have a spherical shape of 1 to 150 mu m. It is preferable to set so that the frozen lip 1b may be obtained. However, although the diameter of the freezing lip 1b is set according to the type of the substrate 6, in general, when the particle size is less than 1 µm, it is difficult to remove large particles. This is because the ability to remove particles by colliding with details decreases.
세정슬러리제조장치(5)는 동결립제조용기(10)의 바로아래에 위치한 밀폐용기인 세정액저장용기(21)와, 이 용기(21)에 수용한 세정액(3)을 소정 온도로 냉각, 보온하는 냉각기구(22)와, 용기(21)안의 세정액(3)과 동결립(1b)를 혼합교반하여 동결립(1b)을 세정액(3)속에 균일하게 분산시키는 혼합교반기구(23)를 구비한다.The cleaning slurry production apparatus 5 cools and insulates the cleaning liquid storage container 21, which is a sealed container located directly under the cryoliptical production container 10, and the cleaning liquid 3 accommodated in the container 21 at a predetermined temperature. Cooling mechanism 22 to be mixed with a mixing and stirring mechanism 23 for uniformly dispersing the freezing granules 1b into the washing liquid 3 by mixing and stirring the cleaning liquid 3 and the freezing granules 1b in the container 21. do.
세정액저장용기(21)는 그 천정부에 동결립취출관(19)의 하단부를 접속함으로써, 동결립제조용기(10)에 연통접속되어 있고, 동결립제조용기(10)로 제조된 동결립(1b)이 동결립취출관(19)으로부터 세정액저장용기(21)안의 세정액(3)속으로 낙하공급되도록 되어 있고, 상기 용기(21)안에서 동결입자(1b)와 세정액(3)과의 혼합액인 세정용 슬러리(4)가 제조되게 된다. 세정액(1b)으로서는 동결립(1b)의 원료인 물(1)보다 응고점이 낮고 또한 기판(6)에 악영향을 미치지 않는 액체가 사용되지만, 일반적으로 알콜류를 사용하는 것이 바람직하다. 예를 들면 이소프로필알콜(mp=-89.5℃:bp=82.4℃),메틸알콜(mp=-97.78℃;bp=64.65℃),에틸알콜(mp=-114.1℃;bp=78.3℃),에틸알콜(95vol%)와 물과의 혼합액(bp=78.2℃), 아세톤(-94.82℃;bp=56.5℃), 아세톤(50vol%)과 물(50vol%)과의 혼합액 등이 사용된다.The cleaning liquid storage container 21 is connected to the freezing granulation container 10 by connecting the lower end of the freezing granules extraction pipe 19 to its ceiling, and the freezing granules 1b made of the cryogenic granulation container 10 are manufactured. ) Is supplied to the cleaning liquid 3 in the cleaning liquid storage container 21 from the freezing lip extraction tube 19, and the cleaning liquid is a mixture of the frozen particles 1b and the cleaning liquid 3 in the container 21. The slurry 4 is prepared. As the cleaning liquid 1b, a liquid having a lower freezing point than the water 1, which is a raw material of the freezing granule 1b, and which does not adversely affect the substrate 6 is used, but in general, alcohols are preferably used. For example, isopropyl alcohol (mp = -89.5 ° C: bp = 82.4 ° C), methyl alcohol (mp = -97.78 ° C; bp = 64.65 ° C), ethyl alcohol (mp = -114.1 ° C; bp = 78.3 ° C), ethyl A mixture of alcohol (95 vol%) and water (bp = 78.2 ° C.), acetone (-94.82 ° C .; bp = 56.5 ° C.), a mixture of acetone (50 vol%) and water (50 vol%), and the like are used.
냉각기구(22)는 냉동기이며, 이 냉동기(22)에 의해 용기(21)안의 세정액(3)을 원료수(1)의 응고점보다 저온이며 또한 세정액(3)의 응고점보다 고온의 범위(일반적으로, -5∼-40℃)에 있어서의 소정 온도로 냉각, 보온하도록 되어 있고, 용기(21)내에서 동결립(1b)이 용해하지 않고 또한 세정액(3)이 응고하는 일없이 적절한 고체액체혼합 슬러리(세정용 슬러리)(4)가 확보된다. 예를 들면, 세정액(3)으로서 이소프로필알콜을 사용한 경우, 냉동기(22)에 의해 -5∼-15℃의 범위로 냉각,보온해 두면, 동결립(얼음)(1)의 용해도 세정액(이소프로필알콜)(3)의 응고도 발생하지 않는 슬러리(4)가 얻어진다.The cooling mechanism 22 is a refrigerator, and the refrigerator 22 causes the cleaning liquid 3 in the container 21 to be lower than the freezing point of the raw material water 1 and higher than the freezing point of the cleaning liquid 3 (generally, , -5 to -40 deg. C) is cooled and insulated at a predetermined temperature, so that the freezing granules 1b do not dissolve in the container 21 and the solid solution is properly mixed without the washing liquid 3 solidifying. A slurry (washing slurry) 4 is secured. For example, in the case where isopropyl alcohol is used as the cleaning liquid 3, the freezing granules are cooled and kept in the range of -5 to -15 ° C so that the solubility of the freezing granules (ice) 1 is washed. The slurry 4 which does not produce the coagulation | solidification of propyl alcohol) 3 is obtained.
혼합교반기구(23)는 용기(21)내의 세정액(3) 또는 세정용 슬러리(4)속에 질소가스 등의 버블링가스(24)를 공급함으로써, 동결립취출관(19)으로부터 세정액저장용기(21)에 낙하공급된 동결립(1b)을 세정액(3)과 빠르게 혼합해서 세정액(3)속에 균일하게 분산하도록, 즉 세정액(3)속에 동결립(1b)이 균일하게 분산하는 균일얼음농도의 세정용 슬러리(4)를 얻도록 구성되어 있다. 동결립제조장치(2)에 의한 동결립(1b)의 제조량은 후술하는 세정용 슬러리분사장치(9)에 의한 세정용 슬러리(4)의 분출중에서 용기(21)내의 세정용 슬러리(4)에 있어서의 동결립(1b)과 세정액(3)이 일정한 배합비를 유지하도록 조정된다. 구체적으로는 세정용 슬러리(4)가 1∼20wt%의 동결립(1b)과 99∼80wt%의 세정액(3)과의 혼합액이 되도록 조정된다. 단, 동결립(1b)이 1wt%미만이면, 기판(6)에 부착한 이물을 충분히 세정, 제거할 수 없고, 반대로 20wt%를 초과하면, 후술하는 세정용 슬러리분사장치(9)의 배관내부를 폐쇄하는 등의 폐해가 발생하기 때문이다. 또, 용기(21)의 상부(기상부)에 배기구(25)가 형성되어 있다. 또, 동결립취출관(19)에 의해 일체적으로 접속된 양 용기(10, 21)는 단열벽(26)에 의해 둘러싸여진 단열영역에 배치되어 있다.The mixing and stirring mechanism 23 supplies the bubbling gas 24, such as nitrogen gas, into the cleaning liquid 3 or the cleaning slurry 4 in the container 21, thereby purifying the cleaning liquid storage container from the freezing lip extraction tube 19. 21. The freezing lip 1b drop-fed to 21 is rapidly mixed with the washing liquid 3 so as to be uniformly dispersed in the washing liquid 3, that is, a uniform ice concentration at which the freezing grain 1b is uniformly dispersed in the washing liquid 3 It is comprised so that the washing | cleaning slurry 4 may be obtained. The amount of production of the freezing granules 1b by the freezing granulator 2 is applied to the cleaning slurry 4 in the container 21 during the ejection of the cleaning slurry 4 by the cleaning slurry spraying device 9 described later. The frozen lip 1b and the washing | cleaning liquid 3 in it are adjusted so that a fixed compounding ratio may be maintained. Specifically, the cleaning slurry 4 is adjusted to be a mixed liquid of 1 to 20 wt% of the freezing granules 1 b and 99 to 80 wt% of the cleaning liquid 3. However, if the freeze lip 1b is less than 1 wt%, foreign matter adhering to the substrate 6 cannot be sufficiently cleaned and removed. If the freeze lip 1b exceeds 20 wt%, the inside of the pipe of the cleaning slurry spraying device 9 to be described later is This is because damage such as closing them occurs. Moreover, the exhaust port 25 is formed in the upper part (weather part) of the container 21. In addition, both the containers 10 and 21 integrally connected by the freeze lip extraction tube 19 are arranged in the heat insulation region surrounded by the heat insulation wall 26.
세정처리실(7)은, 저벽(7a)을 세정처리실에 설치한 세정잔사배출구(27)로 하향경사하는 경사면으로 구성한 것이고, 상기 세정처리실(7)안에 반도체웨이퍼 등의 기판(6)을 그 이면중심부를 올려놓고 수평회전가능하게 지지하는 지지축(28)과, 이것을 회전구동하는 구동원(모터 등)(29)과, 기판세정에 사용한 세정용 슬러리(4)를세정처리실(7)로부터 세정용 슬러리제조장치(5)에 회수하는 세정잔사회수기구(30)를 설치한 것이다. 기판세정에 사용된 세정용 슬러리 즉 동결립 내지 세정액(이하「세정잔사」라 함)(4a)은 세정처리실(7)의 저벽(7a)위를 세정잔사배출구(27)로 흘러내리고, 상기 배출구(27)로부터 세정처리실(7)밖으로 배출된다. 세정잔사회수기구(30)는 세정잔사배출구(27)로부터 세정액저장용기(21)로 안내된 회수관(31)과, 회수관(31)에 설치된 회수펌프(32) 및 그 하류측 필터(33)를 구비해서 이루어지며, 세정잔사배출구(27)로부터 배출되는 세정잔사(4a)를 세정잔사(4a)에 함유되는 파티클을 필터(33)로 제거한 후에, 회수관(31)에서 세정액저장용기(21)로 회수하도록 구성되어 있다. 즉, 후술하는 세정용 슬러리분사장치(9)로부터 세정처리실(7)에 분사되는 동결립(1b)내지 세정액(3)( 및 그 냉열)을 세정용 슬러리제조장치(5)에 회수해서 재이용하도록 구성되어 있다. 또, 회수관(31)에서 필터(33) 내지 펌프(32)의 상류측에는 도시하지 않지만, 회수되는 동결립(1b)을 액상으로 빙해하기 위한 적절한 열교환기가 설치되어 있다.The cleaning processing chamber 7 is formed of an inclined surface inclined downwardly to the cleaning residue outlet 27 provided in the cleaning processing chamber. The substrate 6 such as a semiconductor wafer is disposed on the back surface of the cleaning processing chamber 7. The support shaft 28 which supports the center of rotation in a horizontally rotatable manner, the drive source (motor, etc.) 29 which rotates and drives it, and the cleaning slurry 4 used for cleaning the substrate from the cleaning processing chamber 7 In the slurry manufacturing apparatus 5, the washing residue water-retaining mechanism 30 which is collect | recovered is provided. The cleaning slurry used for cleaning the substrate, that is, freeze granules or cleaning liquid (hereinafter referred to as "cleaning residue") 4a flows down the bottom wall 7a of the cleaning processing chamber 7 to the cleaning residue outlet 27, and the outlet It discharges out of the cleaning process chamber 7 from (27). The cleaning residual water mechanism 30 includes a recovery pipe 31 guided from the cleaning residue outlet 27 to the cleaning liquid storage container 21, a recovery pump 32 provided on the recovery pipe 31, and a downstream filter 33 thereof. And a particle contained in the cleaning residue 4a by the filter 33 after the cleaning residue 4a discharged from the cleaning residue outlet 27 is removed from the cleaning residue discharge port 27. 21). That is, the freezing lip 1b to the cleaning liquid 3 (and its cold heat) injected into the cleaning processing chamber 7 from the cleaning slurry spraying device 9 described later are recovered and reused in the cleaning slurry manufacturing apparatus 5. Consists of. Moreover, although not shown in the upstream side of the filter 33 to the pump 32 in the recovery pipe 31, the appropriate heat exchanger for ice-collecting the freezing lip | rip 1b collect | recovered in liquid phase is provided.
세정용 슬러리 분사장치(9)는 세정처리실(7)안에 기판(6)의 표리면에 소정 각도를 이루어 대향배치된 상하 한 쌍의 분사총(34, 34)과, 세정액저장용기(21)로부터 안내되어 분사총(34, 34)에 분기접속된 슬러리공급관(35)과, 슬러리공급관(35)에 설치되어 세정용 슬러리(4)를 세정액저장용기(21)로부터 공급관(35)을 지나 분사총(34, 34)에 공급하는 공급펌프(36)와, 가스탱크(37)로부터 분사총(34, 34)에 안내되어 분사총(34, 34)에 질소가스 등의 캐리어가스(8)를 공급하는 가스공급관(38)을 구비해서, 세정용 슬러리(4) 및 캐리어가스(8)를 분사총(34,34)에 공급시킴으로써, 세정용 슬러리(40를 캐리어가스(8)에 의해 가속해서 분사총(34, 34)으로부터 기판(6)의 표리면에 분사, 충돌시키도록 되어 있다. 즉, 분사총(34, 34)으로부터는 고체(동결립(1b)), 액체(세정액(3)), 기체(캐리어가스(8))의 3상혼합유체가 기판(6)의 표리면에 분사되는 것이다.The cleaning slurry spraying device 9 is constructed from a pair of upper and lower spray guns 34 and 34 arranged to face each other at a front and rear surface of the substrate 6 in the cleaning processing chamber 7 and the cleaning liquid storage container 21. A slurry supply pipe (35) guided and branched to the injection guns (34, 34) and a slurry supply pipe (35) are installed in the slurry supply pipe (35) through the supply pipe (35) from the cleaning liquid storage container (21) to the injection gun (35). Supply pumps 36 for supplying to the 34 and 34, and the carrier guns 8, such as nitrogen gas, are supplied to the injection guns 34 and 34 from the gas tank 37 to the injection guns 34 and 34. It is provided with a gas supply pipe 38 to supply the cleaning slurry 4 and the carrier gas 8 to the injection guns 34 and 34, thereby accelerating the injection of the cleaning slurry 40 by the carrier gas (8) The guns 34 and 34 are sprayed and collided with the front and back surfaces of the substrate 6. That is, from the guns 34 and 34, solids (freezing particles 1b) and liquids (cleaning liquid 3) , Gas (carrier gas The three-phase mixed fluid of (8) is sprayed on the front and back surfaces of the substrate 6.
이상과 같이 구성된 기판세정시스템에 의하면, 동결립(1b)과 세정액(3)과의 혼합유체인 세정용 슬러리(4)가 캐리어가스(8)에 의해 가속되고, 분사총(34, 34)으로부터 기판(6)의 표리면에 분사, 충돌됨으로써 기판세정이 매우 양호하며 효과적으로 행해진다. 즉, 전술한 아이스 스크러버와 같이 동결립(얼음입자)를 캐리어가스에 의해 가속해서 기판에 충돌시키는 경우와 달리 동결립(1b)과 세정액(3)과의 혼합유체가 기판(6)에 충돌되므로, 동결립(1b)의 충돌에 의한 기판표면에 가해지는 충격이 세정액(3)에 의해 완화되게 된다. 즉, 가스(캐리어가스)에 비해 점성이 높은 액체(세정액(3))가 동결립(1b)의 충돌시에 있어서의 액막완충재로서 기능하게 된다. 따라서, 동결립(1b)의 충돌에 의해 기판(6)의 손상을 확실하게 방지하면서 기판(6)의 표리면을 양호하게 세정할 수 있다. 게다가, 동결립(1b)이 충돌후에 비산하지 않고, 또한 동결립(1b)의 충돌에 의해 제거된 파티클이 세정액(3)에 의해 씻겨져 내리므로, 제거된 파티클이 기판(6)을 재오염할 우려가 없고, 완전한 오염방지효과가 발휘된다.According to the substrate cleaning system configured as described above, the cleaning slurry 4, which is a mixed fluid of the freezing lip 1b and the cleaning liquid 3, is accelerated by the carrier gas 8, and is discharged from the injection guns 34, 34. The substrate is cleaned and sprayed on the front and back surfaces of the substrate 6 by a very good and effective process. That is, unlike the case where the freezing lip (ice particles) are accelerated by the carrier gas and collide with the substrate like the ice scrubber described above, the mixed fluid of the freezing lip 1b and the cleaning liquid 3 collides with the substrate 6. The impact applied to the substrate surface due to the collision of the freeze lip 1b is mitigated by the cleaning liquid 3. That is, the liquid (cleaning liquid 3) which is high in viscosity compared with gas (carrier gas) functions as a liquid film buffer material at the time of the collision of the freezing granule 1b. Therefore, the front and back surfaces of the board | substrate 6 can be wash | cleaned favorably, reliably preventing damage to the board | substrate 6 by the collision of the freezing lip 1b. In addition, since the frozen lip 1b does not fly after the collision and the particles removed by the collision of the frozen lip 1b are washed off by the cleaning liquid 3, the removed particles may recontaminate the substrate 6. There is no concern, and a full pollution prevention effect is exhibited.
또, 세정용 슬러리(4)는 동결립(1b)과 이것을 용해하지 않는 저온액인 세정액(3)과의 혼합유체인 것으로부터, 즉 0℃이하의 저온유체이므로, 기판(6)에 부착하는 레지스트막 등의 유기물은 고화, 수축해서 제거되기 쉬워지고, 세정효과가 더욱 향상한다. 또한 세정슬러리(4)는 저온유체이며, 증기압이 낮은 것이므로, 화재발생의 우려가 없고, 안전한 기판세정을 행할 수 있다. 특히, 세정액(3)으로서 이소프로피알콜 등의 유기화합물을 사용한 경우에는 물을 사용한 경우와 달리, 기판(6)에 자연산화막이 형성되지 않는다. 또, 세정액(3)이 상기 아세톤과 물과의 혼합액 등과 같이 물을 함유하는 유기화합물인 경우에도 물을 단독으로 사용하는 경우에 비해 자연산화막의 막두께증가를 효과적으로 억제할 수 있다.Moreover, since the washing | cleaning slurry 4 is a mixed fluid of the freezing granule 1b and the washing | cleaning liquid 3 which is a low temperature liquid which does not melt | dissolve it, that is, it is a low temperature fluid below 0 degreeC, it adheres to the board | substrate 6 Organic substances, such as a resist film, are easy to solidify and shrink | contract and remove, and the washing | cleaning effect further improves. In addition, since the cleaning slurry 4 is a low temperature fluid and has a low vapor pressure, there is no fear of fire, and the substrate can be safely cleaned. In particular, when an organic compound such as isoprop alcohol is used as the cleaning liquid 3, unlike the case where water is used, a natural oxide film is not formed on the substrate 6. In addition, even when the cleaning liquid 3 is an organic compound containing water, such as a mixture of acetone and water, the increase in the film thickness of the natural oxide film can be effectively suppressed compared with the case where water is used alone.
또, 분사총(34, 34)에서는 고체(동결립(1b), 액체(세정액(3)), 기체(캐리어가스(8))의 3상혼합유체가 기판(6)의 표리면에 분사되므로 이들 혼합비율을 조정함으로써 세정력을 용이하게 제어할 수 있고, 기판(6)의 성상에 따른 최적의 세정을 행할 수 있다.In the injection guns 34 and 34, a three-phase mixed fluid of solid (copper granules 1b, liquid (cleaning liquid 3) and gas (carrier gas 8) is sprayed on the front and back surfaces of the substrate 6; By adjusting these mixing ratios, the cleaning power can be easily controlled, and optimal cleaning can be performed according to the properties of the substrate 6.
또, 동결립제조용기(10)와 세정액저장용기(21)를 직결하고 있는 것 및 세정용 슬러리(4)가 저온유체인 것으로부터, 세정잔사인 사용이 끝난 동결립(1b)내지 저온액인 세정액(3)을 세정액저장용기(21)에 회수시키는 것과 더불어, 세정시스템으로부터의 폐기, 여잉냉열을 회수, 유효하게 이용할 수 있고, 러닝코스트를 저감시킬 수 있다. 또한, 특히, 동결립(1b)에 의한 세정효과뿐만 아니라, 세정액(3)에 의한 세정효과도 발휘되므로, 서두에서 서술한 동결립(얼음입자)만으로 세정을 행하는 아이스 스크러버에 비해 필요로 되는 동결립개수가 대폭 삭감되며, 이것에 의해 동결립제조장치(1) 나아가서는 세정시스템전체의 러닝코스트를 더욱 저감시킬 수 있다.In addition, since the freezing granulation container 10 and the cleaning liquid storage container 21 are directly connected to each other, and the cleaning slurry 4 is a low temperature fluid, the used freezing granules 1b to low temperature liquid, which are cleaning residues, are used. In addition to recovering the cleaning liquid 3 to the cleaning liquid storage container 21, waste from the cleaning system and excess cooling heat can be recovered and used effectively, and the running cost can be reduced. In addition, not only the cleaning effect by the freezing lip 1b but also the cleaning effect by the cleaning liquid 3 are exerted, so that freezing is required as compared to an ice scrubber which cleans only with the freezing lip (ice particles) described above. The number of rips is greatly reduced, whereby the running cost of the freeze-lip manufacturing apparatus 1 and the entire cleaning system can be further reduced.
또, 본 발명은 상기한 실시형태에 한정되는 것은 아니고, 본 발명의 기본원리를 벗어나지 않는 범위에서 적절하게 개량, 변경할 수 있다.In addition, this invention is not limited to said embodiment, It can improve suitably and change in the range which does not deviate from the basic principle of this invention.
예를 들면, 원료수공급기구(11)는 일본국 특허공개평성3-52369호 공보 또는 특허공개평성5-144794호공보에 개시되는 바와 같이, 원료수(1)를 동결립제조용기(10)에 간접적으로 분무공급하도록 구성할 수 있다. 또, 냉각기구(22)는 상기한 냉동기를 사용하는 것외에, 액체질소 등의 냉메에 의해 세정액저장용기(21)를 직접 냉각하는 구성으로 할 수 있다. 또, 필요로 되는 저장세정액(3)의 냉각온도에 따라서는 세정액저장용기(21)에 직결된 동결립제조용기(10)내의 냉열을 이용할 수도 있다.For example, as the raw material water supply mechanism 11 is disclosed in Japanese Patent Application Laid-Open No. 3-52369 or Japanese Patent Application Laid-Open No. 5-144794, the raw material water 1 is freeze granulated production vessel 10. It can be configured to spray supply indirectly to. In addition to using the above-mentioned freezer, the cooling mechanism 22 can be configured to directly cool the cleaning liquid storage container 21 by cooling with liquid nitrogen or the like. In addition, depending on the cooling temperature of the storage cleaning liquid 3 required, the cooling heat in the freezing granulation vessel 10 directly connected to the cleaning liquid storage container 21 may be used.
또, 세정처리실(7)에는 필요에 따라 순수 등에 의한 린스설비를 설치해 둘 수 있고, 세정슬러리(4)에 의한 본 세정후에 린스를 행함으로써 파티클에 의한 재오염을 보다 확실하게 방지하도록 연구하는 것도 가능하다. 기판(6)은 세정액(3)에 의해 씻겨지는 결과, 제거된 파티클이 재부착하기 어려운 것은 물론이지만, 가령, 제거된 파티클이 재부착한다해도 그 부착력이 약하므로, 상기한 린스에 의해 용이하게 제거된다.In addition, if necessary, a rinse facility using pure water or the like can be provided in the cleaning treatment chamber 7, and research is performed to reliably prevent recontamination by particles by rinsing after the main cleaning by the cleaning slurry 4. It is possible. As a result of being washed by the cleaning liquid 3, the substrate 6 is difficult to reattach the removed particles, but, for example, even if the removed particles are reattached, their adhesion is weak, so that the above-mentioned rinsing is easily performed. Removed.
또, 상기 세정시스템을 거친 세정에 사용하는 경우에는 세정잔사회수기구(30)에 있어서의 필터(33)는 이것을 특별히 필요로 하지 않는다.In the case where the cleaning system has been used for cleaning, the filter 33 in the cleaning residual water mechanism 30 does not need this particularly.
이상의 설명에서 용이하게 이해되듯이, 본 발명의 기판세정시스템에 의하면 서두에 서술한 브러시 스크러버나 아이스 스크러버에 의한 경우와 같은 문제(예를 들면, 기판의 부차적 오염이나 소자의 파괴를 초래하는 등)를 발생하는 일없이, 기판을 양호하며 또한 효과적으로 세정할 수 있다.As can be easily understood from the above description, according to the substrate cleaning system of the present invention, the same problems as those caused by the brush scrubber or the ice scrubber described earlier (for example, the secondary contamination of the substrate or the destruction of the element, etc.) The substrate can be cleaned well and effectively without generating.
Claims (7)
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KR1020010047860A KR20030013708A (en) | 2001-08-09 | 2001-08-09 | Substrate cleaning system |
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KR102087108B1 (en) * | 2019-11-15 | 2020-03-10 | (주)에프피에이 | Smart multi cooling powder cleaning system |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR102087108B1 (en) * | 2019-11-15 | 2020-03-10 | (주)에프피에이 | Smart multi cooling powder cleaning system |
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