KR20030006809A - Composite in order to recycle etchant which can continuously operate and supply, and the supply method - Google Patents

Composite in order to recycle etchant which can continuously operate and supply, and the supply method Download PDF

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KR20030006809A
KR20030006809A KR1020010042737A KR20010042737A KR20030006809A KR 20030006809 A KR20030006809 A KR 20030006809A KR 1020010042737 A KR1020010042737 A KR 1020010042737A KR 20010042737 A KR20010042737 A KR 20010042737A KR 20030006809 A KR20030006809 A KR 20030006809A
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South Korea
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etching
solution
hcl
etching solution
composition
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KR1020010042737A
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Korean (ko)
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이재현
홍현일
김동규
유병용
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(주)오알켐
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/46Regeneration of etching compositions

Abstract

PURPOSE: An etching solution generating composition for continuous work and supply, a method for supplying HCl as an oxidation auxiliary, and a method for supplying the etching solution are provided, to allow the CuCl2-NaClO3 etching solution for the formation of a PCB circuit to be worked continuously. CONSTITUTION: The etching solution generating composition comprises 150-250 g/L of NaClO3 as an oxidizing agent; 40-60 g/L of an additive; and deionized water. Preferably the additive is at least one selected from the group consisting of 0.5-1.5 wt% of a corrosion preventer comprising 1,2,3-benzotriazole and/or polytriazole, 1-3 wt% of an exfoliation promoter, 0.1 wt% of a surfactant comprising dilute alcohol alkoxylate or a block copolymer of ethylene oxide and propylene oxide, and 0.3 wt% of an amine. 35% HCl is supplied as an oxidation auxiliary by the ratio of the generating composition to the HCl solution being 1 : 1.3-1.5.

Description

연속적인 작업과 공급이 가능토록 에칭작업액을 재생시키는 조성물 및 그 공급방법{Composite in order to recycle etchant which can continuously operate and supply, and the supply method}Composition in order to recycle etching work solution for continuous operation and supply {Composite in order to recycle etchant which can continuously operate and supply, and the supply method}

본 발명은 부식에칭액에 관한 것으로 특히 연속 공정이 가능한 염화동-염소산나트륨계 PCB 회로형성용 에칭작업액의 재생조성물 및 그 공급방법에 관한 것이다.The present invention relates to a corrosion etching solution, and more particularly, to a regenerated composition of an etching working solution for forming a copper chloride-sodium chloride-based PCB circuit capable of a continuous process and a supply method thereof.

종래, H2O2계의 부식액은 일반적으로 페널 부식에 사용하는 것으로 H2O2,HCl이 주원료이며 비중 또는 산화 환원 전위차(ORP) 제어로 연속작업이 가능하였다.Conventionally, H 2 O 2 -based corrosion solutions are generally used for panel corrosion, and H 2 O 2 and HCl are the main raw materials, and continuous operation is possible by controlling specific gravity or redox potential difference (ORP).

또한 재생 시스템 개발로 폐액 감소와 경제성이 있었다. 그 외염화철(Ferric Chloride) 방법은 단면 부식에 많이 사용하였으며 염화동으로 대체되는 추세이다.In addition, the development of a regeneration system resulted in reduced waste and economic feasibility. The Ferric Chloride method is widely used for sectional corrosion and is being replaced by copper chloride.

최근 파인 라인 에칭(fine line etching)목적으로 안정제 개발과 동시에 사용량 증가 추세인 알카리(암모니움)부식액은 패턴 부식에 사용하는 것으로 고도의 생산 능력과 경제성 그리고 금속, 비금속 레지스트(resist)에 관계없이 다양한 제품을 생산할 수 있는 장점 등을 이유로 광범위하게 사용하고 있으며, 재생 장치 개발로 환경 문제를 일부 해결하였다.Alkaline (Ammonia) corrosion solution, which is recently used for the development of stabilizers for fine line etching and is increasing in usage, is used for pattern corrosion. It is widely used because of its merits in producing products, and it solved some of the environmental problems by developing regeneration devices.

기타 과산화수소/황산 계 부식액, 과황산 암몬(Ammonium Persulphate)부식액이 있었다. 그러나 이러한 종래의 부식에칭액 제품들은 아래와 같은 문제점들을 공통적으로 갖고 있다.Other hydrogen peroxide / sulfuric acid corrosion solutions and ammonium persulphate etchants were present. However, these conventional corrosion etchant products have the following problems in common.

1)구리 용해량이 매우 낮음.(120 ∼ 130 g/ℓ)1) The amount of copper dissolved is very low. (120 ~ 130 g / ℓ)

2) HCl 농도가 높음(pH 1.3 ∼ 1.5),2) high HCl concentration (pH 1.3 to 1.5),

3) 폭발의 위험성이 있으며3) There is a risk of explosion

4) 가격이 비싸고4) The price is expensive

5) 건조 막 밀착성 문제 및 현상 후 에지 부위 불량 발생 초래.5) Causes dry film adhesion problems and edge defects after development.

6) 용액이 불안정하여 장기간 방치 후는 그대로 사용할 수 없음.6) The solution is unstable and cannot be used as it is after being left for a long time.

7)다량의 폐액 발생7) Large amount of waste liquid

8) 부식 율이 나빠 파인 패턴 에칭이 불가능하다.8) The corrosion rate is bad, so fine pattern etching is impossible.

따라서 종래의 PCB 회로 형성용 부식액의 구리용해량을 200% 증가시켜 생산성을 향상시키고, 폐수량을 1/2로 감소시켜 환경친화적이며, 초정밀회로 재현이 가능하고, PCB 회로에 침투(attack)가 없는 부식액이 요구되어 왔다.Therefore, the copper dissolution rate of the conventional PCB circuit forming corrosion solution is increased by 200% to improve productivity, and the wastewater amount is reduced to 1/2, which is environmentally friendly, and can reproduce ultra-precision circuits, and there is no attack on the PCB circuit. Corrosive solutions have been required.

본 발명은 종래의 PCB 회로형성용 부식에칭액의 구리 용해량을 200% 증가시켜 생산성을 향상시키고, 폐수량을 1/2로 감소시켜 환경친화적이며, 초정밀 회로 재현이 가능하고 종래 약품과는 달리 PCB 회로에 침투가 없는 부식 에칭액을 제공하며, 또한 작업관리가 용이하며 데이터베이스 구축이 가능한 부식액 자동 공급방법을 제공하는 것을 목적으로 한다.The present invention improves productivity by increasing the amount of copper dissolved in the corrosion etching solution for conventional PCB circuit formation by 200%, and reduces the amount of waste water by 1/2, which is environmentally friendly, and enables high-precision circuit reproduction and unlike PCBs. The purpose of the present invention is to provide a corrosion etching solution that does not penetrate into the solution, and to provide a method of automatically supplying a corrosion solution that can easily manage work and establish a database.

본 발명은 종래 부식액들의 동박 부식시 초래되는 단점을 개선하고 파인 라인(fine line), 마이크로 파인 라인(micro-fine line), 내부층(inner layer) 및 다중층(multi layer) 고정밀 회로형성을 위한 고부가가치의 부식에칭작업액 및 에칭액 자동 공급방법을 제공한다.The present invention improves the disadvantages caused by copper corrosion of conventional corrosives and is intended for the formation of fine lines, micro-fine lines, inner layers and multi-layer high precision circuits. It provides high value-added corrosion etching working liquid and automatic etching liquid supplying method.

도 1은 본 발명 자동공급장치의 구성도1 is a block diagram of the present invention automatic supply

※도면중 주요 부호의 설명※※ Explanation of main code in drawing ※

1 : NaClO3탱크 2 : HCl 탱크 3, 3' : 정량펌프1: NaClO 3 tank 2: HCl tank 3, 3 ': Metering pump

4 : 순환 펌프 5 : 에칭 쳄버4: circulation pump 5: etching chamber

본 발명은 에칭액 특히, PCB 회로형성용 염화동-염소산나트륨(CuCl2-NaClO3)에칭작업액의 연속적인 작업을 위한 재생조성물과 산화보조제인 염산(HCl)의 공급방법에 관한 것으로,The present invention relates to a method for supplying a regenerated composition and hydrochloric acid (HCl) as an oxidizing aid for the continuous operation of an etching solution, in particular, copper chloride-sodium chloride (CuCl 2 -NaClO 3) etching working solution for forming a PCB circuit,

재생조성물 리터당 산화제로서 바람직하기로는 염소산나트륨(NaClO3)150-250 g/ℓ, 더욱 바람직하기로는 170-230 g/ℓ, 0.5-1.5wt%의 1,2,3 benzotriazole, polytriazole과 그 혼합물의 동박 부식억제제, 1-3wt%의 박리촉진제, 0.1wt%의 묽은 알코올 알콕시레이트나 에틸렌 산화물과 프로필렌 산화물의 블록공중합체(blockcoplymer) 계통의 억제제겸, 계면활성제, 0.3wt% 아민류의 단독이나 혼합물로서 이루어지는 첨가제 40-60 g/ℓ 및 탈이온수로서 조성되는 재생조성물로서 주로 PCB 회로형성에 사용하는 염화동-염소산나트륨 에칭작업액을 연속 작업이 가능하게 재생시키는 재생조성물이다. 이때 동시에 투입되는 산화 보조제로서 바람직하기로는 재생조성물 1 : 35%염산 1.3~1.5 의 비율, 더욱 바람직하기로는 재생조성물 1 : 35%염산 1.4 의 비율로 공급한다.Oxidizer per liter of regenerated composition is preferably 150-250 g / l sodium chloride (NaClO 3 ), more preferably 170-230 g / l, 0.5-1.5 wt% of 1,2,3 benzotriazole, polytriazole and mixtures thereof Copper foil corrosion inhibitor, 1-3wt% peeling accelerator, 0.1wt% dilute alcohol alkoxylate, block copolymer system of ethylene oxide and propylene oxide, inhibitor, surfactant, 0.3wt% amine alone or as a mixture It is a regeneration composition which is composed of 40-60 g / l of additives and deionized water, and is a regeneration composition that regenerates the copper chloride-sodium chloride etching work solution mainly used for PCB circuit formation to enable continuous operation. At this time, as an oxidizing aid to be added at the same time, preferably, the ratio of regeneration composition 1: 35% hydrochloric acid is 1.3 to 1.5, and more preferably, the regeneration composition 1: 35% hydrochloric acid is 1.4.

본 발명에 따르는 재생조성물은 파인 라인(fine line), 파인 패턴 형성, 마이크로 파인 라인(micro-fine line),초정밀 회로 재현, 내부층(inner layer) 및 다중층(multi layer)과 같은 산업용 PCB에 사용하는 염화동-염소산나트륨(CuCl2-NaClO3)계 에칭작업액을 재생하여 연속적인 에칭이 가능하며, 종래의 H2O2계의 부식액보다 높은 구리의 용해량, 낮은 pH작업조건에 따른 안정성, 저렴한 가격 및 건조막의 밀착성 문제 및 에지 분리현상을 개선시킨 PCB 회로 형성을 위한 도금 동박 부식액 재생조성물이다.The regenerated composition according to the invention is applied to industrial PCBs such as fine lines, fine pattern formation, micro-fine lines, ultra-precision circuit reproduction, inner layers and multi layers. The copper chloride-sodium chloride (CuCl 2 -NaClO 3 ) -based etching work solution can be regenerated and continuously etched, and the amount of copper dissolved higher than that of the conventional H 2 O 2 system, and the stability according to the low pH work conditions This is a reclaimed copper foil corrosion composition for forming PCB circuits with low cost, improved adhesion of dry film and edge separation.

본 발명의 에칭액 자동 공급장치는 SG: 1.3 ∼ 1.5(resolution:0.02 이하)Etching solution automatic supply of the present invention is SG: 1.3 ~ 1.5 (resolution: 0.02 or less)

pH 1.3 ∼ 1.5의 원료자재 및 특성을 가지는 것이다.It has a raw material and a characteristic of pH 1.3-1.5.

본 발명의 에칭액 자동 공급기는 PC와 연결하여 에칭작업액의 비중, pH, 흡광도 등을 관리하여 재생조성물과 산화보조제를 자동으로 공급하고 관리 항목을 30초 간격으로 측정하며, 관리 항목을 모니터 화면에 도표로 표시하여 에칭작업액 관리를 보다 쉽고 정확하게 할수 있으며, 페널 부식에 사용하는 에칭작업액을 비중,pH, 포토 셀 센서(photo cell sensor) 제어(controll)로서 연속 작업이 가능하도록 하였다.Etching liquid automatic feeder of the present invention is connected to a PC to manage the specific gravity, pH, absorbance, etc. of the etching work solution to automatically supply the regenerated composition and the oxidizing aid and measure the management items at 30 second intervals, the management items on the monitor screen It is possible to manage the etching work liquid more easily and accurately by displaying the chart, and it is possible to continuously work the etching work liquid used for panel corrosion as specific gravity, pH, and photo cell sensor control.

타사 제품과의 비교 내용은 다음과 같다.The comparison with other companies' products is as follows.

구분division 종래장치Conventional device 종래장치Conventional device 본 발명The present invention 측정 방법How to measure 포토 셀Photocell ORPORP S.G + pH + 포토셀 + 온도S.G + pH + Photocell + Temperature 장점Advantages 수리, 교체가 용이Easy to repair and replace HCl,NaClO3별도관리Separate management of HCl, NaClO 3 작업관리가 용이하며 PC 활용 데이터 베이스 구축이 가능하며, 재생 조성물로 고정밀 회로 재현이 가능하게 됨Easy work management, PC-enabled database construction, high-accuracy circuit reproduction with regeneration composition 단점Disadvantages 약품소모량이 많다.HCl농도관리가 어렵다.High drug consumption, difficult to control HCl concentration 관리가 어렵다Difficult to manage 국산 인식 결여Lack of Domestic Awareness 특징Characteristic 포토 셀 이용(520nm) 구리이온 증가시 약품 보충Replenishment of chemicals with increased photovoltaic cell (520 nm) HCl은 pH 메터로 측정 관리 공급, NaClO3는 ORP 메터로 측정 관리 공급한다HCl measures and supplies pH meter, NaClO 3 measures and measures ORP meter 비중으로 재생조성물과 HCl을 관리하고, pH로 HCl관리를 보조하며,포토셀로 에칭작업액을 보조관리한다Regenerate composition and HCl by specific gravity, assist HCl management by pH, and assist etching management with photocell

1. CuCl2-NaClO3에칭작업액에 보충하는 보충액1.Replenishment solution to CuCl 2 -NaClO 3 etching work solution

재생조성물 : 보충액(산화제)Regenerated composition: supplement solution (oxidizer)

외관 : 무색 투명 액상Appearance: Colorless transparent liquid

비중 : 1.089 ∼ 1.289(1.189 ±0.1)Specific gravity: 1.089 ~ 1.289 (1.189 ± 0.1)

pH : 6 ∼ 8(7 ±1)pH: 6-8 (7 ± 1)

35% HCl : 보충액(산화 보조제)35% HCl: Supplement (oxidation aid)

2. 에칭작업조건2. Etching work condition

비중 : 1.38 ∼ 1.44(1.41 ± 0.03)Specific gravity: 1.38 to 1.44 (1.41 ± 0.03)

pH : 1.3 ∼ 1.5(1.4 ±0.1)pH: 1.3 to 1.5 (1.4 ± 0.1)

Cu 농도 : 200 ∼ 230g/ℓ(215 ±15 g/ℓ)Cu concentration: 200 ~ 230g / ℓ (215 ± 15 g / ℓ)

온도 : 50 ∼ 54℃(52 ±2℃)Temperature: 50 to 54 ° C (52 ± 2 ° C)

3. 건욕방법3. How to bathe

a. 에칭 기에 물을 넣은 후 HCl 0.05%를 첨가하고 순환시켜 세척한다.a. Water is added to the etching machine, followed by rinsing by adding HCl 0.05% and circulating.

b. 쳄버 내 세척수를 완전히 배출 후 CuCl2-NaClO3에칭작업액으로 액수위 까지 보충한다.b. Drain the wash water in the chamber completely and replenish it to the liquid level with CuCl 2 -NaClO 3 etching solution.

c. CuCl2-NaClO3에칭작업액 온도를 52℃까지 올린 후 비중, pH 및 흡광도 관리장치를 점검한다.c. After raising the temperature of CuCl 2 -NaClO 3 etching solution to 52 ℃, check specific gravity, pH and absorbance control device.

d. pH 및 비중 센서의 조정 후 작업을 진행한다.d. Work after the pH and specific gravity sensors are adjusted.

4. 작업방법4. How to work

a. CuCl2-NaClO3에칭작업액은 부식이 진행됨에 따라 구리 함유량이 증가하여 비중은 높아지고 pH 는 낮아진다. 이때 비중 센서에 의해 비중관리 범위를 벗어나면 재생조성물과 염산을 자동 보충한다.a. As the CuCl 2 -NaClO 3 etching solution proceeds to corrosion, the copper content increases and the specific gravity is high and the pH is low. If the specific gravity sensor is out of the specific gravity control range, the regeneration composition and hydrochloric acid are automatically replenished.

b. 구리농도가 250g/ℓ가 넘지 않도록 재생조성물과 염산을 보충시 에칭작업액을 배출한 후 보충을 진행한다.b. When the regeneration composition and hydrochloric acid are replenished so that the copper concentration does not exceed 250 g / l, the reworking solution is discharged before replenishment.

5. 관리항목5. Management Items

a. 비중a. importance

에칭작업액내의 구리농도와 에칭작업액의 비중은 직접적인 관계가 있으며 작업이 진행됨에 따라 구리농도는 증가하고 이는 비중센서에 의하여 점검할 수 있다. 비중(Cu 농도)의 증가는 Cu 이온의 증가로 발생되며 이때 재생조성물과 염산을 보충하여 관리 범위 내로 비중을 조절하여야 한다.The copper concentration in the etching solution and the specific gravity of the etching solution are directly related to each other. As the work progresses, the copper concentration increases, which can be checked by the specific gravity sensor. The increase in specific gravity (Cu concentration) is caused by the increase of Cu ions, and the specific gravity must be controlled within the management range by supplementing the regeneration composition and hydrochloric acid.

b. pHb. pH

HCl농도가 조절 범위를 벗어나서 HCl 농도가 높으면 이산화염소와 염소가스가 발생하고 낮으면 산화반응이 완결되어 수산화구리가 석출되는 부가반응이 일어난다. 따라서 HCl의 관리는 매우 중요하며 낮은 HCl의 농도관리는 재생반응 중 쉽게 HCl의 부족상태가 일어나기 때문에 주기적으로 HCl을 공급하여야 한다. 자동보충장치에 의한 HCl의 보충은 pH 1.5 에서 HCl이 보충되고 pH 1.2에서 보충이 중단되도록 관리하여야 한다.If the HCl concentration is out of the control range and the HCl concentration is high, chlorine dioxide and chlorine gas are generated, and if the HCl concentration is low, the oxidation reaction is completed and an addition reaction occurs in which copper hydroxide is precipitated. Therefore, the management of HCl is very important, and low concentration of HCl should be supplied with HCl periodically because the HCl deficiency easily occurs during the regeneration reaction. The replenishment of HCl by the autofiller should be managed to replenish HCl at pH 1.5 and stop replenishment at pH 1.2.

c. 흡광도c. Absorbance

에칭액의 변화는 흡광도 센서에 의하여 관리할 수 있다.The change of the etching liquid can be managed by the absorbance sensor.

에칭공정에서 환원된 Cu+ 이온의 산화제 역할로 재생조성물이 사용되어지며 재생조성물의 농도가 낮으면 산화 반응이 지연되어 액의 색깔이 녹청색에서 검은색에 가까워지며 부식이 진행되지 않으므로 자동공급장치에 의한 적절한 재생조성물의 보충이 이루어져야 한다.In the etching process, the regenerated composition is used as an oxidant of the reduced Cu + ions. If the regenerated composition is low, the oxidation reaction is delayed, and the color of the liquid is closer to greenish blue to black. Appropriate regeneration composition should be supplemented.

d. 온도d. Temperature

적절한 온도조건(52℃)에서 부식작업이 진행될 수 있도록 온도 조절기가 부착되어 가열 및 냉각이 이루어져야 한다.Temperature controllers should be attached and heated and cooled to allow corrosion to proceed under appropriate temperature conditions (52 ° C).

e. 작업액의 순환e. Circulation of the working fluid

부식작업의 진행 중에 pH 변화가 급격하게 이루어지므로 보충액이 가능한 한 빨리 작업액에 혼합될 수 있도록 순환 펌프를 대용량으로 해야 한다(작업액 용량 1사이클은 3분 이내에 실시되어야 한다).As the pH changes rapidly during the corrosive operation, the circulating pump must be large enough so that the replenishment can be mixed into the working solution as soon as possible (one cycle of working liquid volume should be carried out within 3 minutes).

f. 환기f. Ventilation

부식작업의 진행 중에 인체에 유해한 이산화염소와 염소가스가 발생할 수 있으므로 부식기는 조절 가능한 배기시설이 필수적으로 갖추어져야 한다.Since chlorine dioxide and chlorine gas may be harmful to the human body during the corrosive operation, the corrode must be equipped with an adjustable exhaust system.

본 발명에 따른 방법은 다음과 같은 특장점이 있다.The method according to the invention has the following advantages.

(1) 고밀도: 구리 용해량이 230∼240g/ℓ로서 매우 높다.(1) High density: The copper melt amount is very high, 230 to 240 g / l.

(2) H2O2계의 부식액에 비해 HCl 농도가 낮다(pH 1.3∼1.5)(2) HCl concentration is lower than that of H 2 O 2 system (pH 1.3 to 1.5)

(3) 폭발의 위험성이 없다.(3) There is no risk of explosion.

(4) H2O2계의 부식액에 비해 가격이 싸다.(4) The price is cheaper than that of the H 2 O 2 system.

(5) 건조막 밀착성 문제 및 현상 후 에지 부위 불량 발생이 없다.(5) There is no problem of dry film adhesion and edge area defect after development.

(6) 용액이 안정하여 장시간 방치 후에도 별도의 보충 없이 그대로 사용할 수 있다.(6) The solution is stable and can be used as it is without replenishment even after standing for a long time.

(7) 구리 용해량이 높아서 폐액 발생이 적어 환경친화적이다.(7) It is environmentally friendly due to high amount of copper dissolved and less waste liquid.

(8) 에칭 율(etch factor)이 좋아 파인 패턴 에칭이 가능하다.(8) Fine pattern etching is possible because of good etch factor.

이러한 본 발명의 평가항목 및 평가 방법Such evaluation items and evaluation method of the present invention

구분division 평가항목Evaluation item 평가방법Assessment Methods 적용기준Application standard 실적Performance 에칭액Etching solution 1. etch factorEtch factor 광학 현미경Optical microscope 4.5 이상4.5 or more 4.5 이상4.5 or more 2.Cu 농도2.Cu concentration 습식 분석Wet analysis 220∼240g/ℓ220 to 240 g / l 230∼240g/ℓ230-240 g / ℓ 3. 균일성3. Uniformity 광학현미경Optical microscope 5㎛ 이내Within 5㎛ 5㎛ 이내Within 5㎛ 4.선 폭4.line width 광학현미경Optical microscope 100㎛100 μm 100 ±3㎛100 ± 3㎛ 자동 공급기Automatic feeder 1.센서 정확성1. Sensor accuracy 비중계hydrometer 0.01 이하0.01 or less 0.01 이하0.01 or less 2.센서 정확성2. Sensor accuracy pHpH 0.05 이하0.05 or less 0.05 이하0.05 or less 3. 공급 비3. Supply ratio 용량 비Capacity ratio 1 : 1.31: 1.3 1 : 1.31: 1.3 4.absorbance4.absorbance 흡광법Absorbance 520 nm520 nm 520 nm520 nm

본 발명 재생조성물로 연속작업이 가능한 에칭작업액과 종래기술의 비교Comparison of etching work solution which can be continuous work with the recycled composition of the present invention and the prior art

항 목Item 본 발명The present invention 종래 H2O2계의 에칭액Conventional H 2 O 2 Etching Solution HCL 농도HCL concentration HCL 농도가 낮다(pH 1.5 이하 관리)(N 농도: 0.04 N 이하)Low HCL concentration (pH 1.5 or below) (N concentration: 0.04 N or below) HCL 농도가 높다(pH 0.5 이하 관리)(N 농도: 2 ∼ 3N)High HCL concentration (pH 0.5 or below) (N concentration: 2-3 N) 밀도용해량Density Dissolution 고밀도(∼240 g/ℓ)(구리용해량이 높다)(염화동에 비해 폐액 가치 높음)1 ClO3= 6Cu+→ 6Cu++ High density (~ 240 g / ℓ) (high copper dissolution) (high waste value compared to copper chloride) 1 ClO 3 = 6Cu + → 6Cu ++ 저밀도(∼120g/ℓ)(구리용해량이 낮다)1 O2= 2Cu+→ 2Cu++ Low density (~ 120 g / l) (low copper melt) 1 O 2 = 2Cu + → 2Cu ++ 가스 발생gassing Cl2+ ClO2가스 발생밴트의 강화로 보완가능Can be supplemented by strengthening the Cl 2 + ClO 2 gas generating band 가스 위험성이 작다.Low gas risk 용액 안정성Solution stability 용액이 안정하여 장기간 방치시에도 그대로 사용가능The solution is stable and can be used as it is even if left for a long time 장기간 방치시 과산화수소가 물로 변하여 과산화수소를 보충하여야 한다.After long-term storage, hydrogen peroxide turns into water and must be replenished with hydrogen peroxide. 위험성Risks 폭발 위험성이 없다No risk of explosion 과산화수소에 의해 폭발가능Explosive by hydrogen peroxide 회로 재현성Circuit reproducibility HCl농도가 낮으므로 D/F의 밀착성 문제 및 현상후 에지 분리 불량 발생이 없다Low HCl concentration prevents D / F adhesion problems and post-development edge separation HCl농도가 높으므로 D/F의 밀착성 문제 및 현상후 에지 분리 불량 발생 가능성이 있다Due to high HCl concentration, there may be a problem of adhesion of D / F and poor edge separation after development 코스트Coast HCl 사용량이 적으므로 가격이 싸다Low price due to low HCl usage HCl 사용량이 많으므로 가격이 비싸다High price due to high amount of HCl

본 발명의 에칭 장비 조건Etching Equipment Conditions of the Invention

항 목Item 구분division 환 기Ventilation 필수necessary Cl2+ ClO2가스 발생 위험Cl 2 + ClO 2 gas generation risk 순 환cycle 필수necessary 쳄버 1 turn/3minChamber 1 turn / 3min 스프레이spray 필수necessary 30 ∼ 35 psi30 to 35 psi 가열기, 냉각기Burner, cooler 필수necessary 석영, 테프론, 프라시솔 등의 코팅 강철Coated steels such as quartz, teflon, prassol 필 터filter 필요need 탄소여과 또는 일반 PP 수세 가능한 필터 사용Use of carbon filtration or common PP washable filters 자동공급(Auto Dosing)Auto Dosing 필요need 자동공급 센서에 의한 자동 공급Automatic feeding by automatic feeding sensor 공급 속도Feed rate HCl 10/min : 재생조성물 4/minHCl 10 / min: Regenerated composition 4 / min

본 발명의 화학 반응은 다음과 같다.The chemical reaction of the present invention is as follows.

Cu0, CuCl2 Cu 0 , CuCl 2

동박(Cu0) 의 에칭은 에칭작업액(폐액)의 CuCl2에 의해 이루어진다.Etching the copper foil (Cu 0) is achieved by a CuCl 2 etching of the work liquid (waste liquid).

Cu+++ Cu0→ 2 Cu+(1)Cu ++ + Cu 0 → 2 Cu + (1)

위 반응식은 ClO3에칭작업액이 기판 표면에서 일어나는 반응을 간단하게 나타낸 것으로 2가의 동( Cu++)과 반응한 금속 동(Cu0)은 1가 동(Cu+)을 형성한다.The above reaction scheme is metallic copper (Cu 0) by etching ClO 3 working solution is simply shown to be a divalent copper (Cu ++) and reacting the reaction taking place at the substrate surface 1 a form a copper (Cu +).

2Cu++ NaClO3→ 2Cu++(2)2Cu++ NaClO3→ 2Cu++(2)

위 반응식은 에칭기내에서 스프레이 작업시 재생조성물의 NaClO3와 반응한1가동(Cu+)은 다시 2가동(Cu++)으로 산화된다.In the above equation, one operation (Cu + ) reacted with NaClO 3 in the regeneration composition during the spraying operation in the etching machine is oxidized to two operation (Cu ++ ) again.

상기 반응식은 단순화 한 것으로 염소산나트륨, 구리, 염소의 중요성을 나타낸 ClO3에칭작업액의 반응식을 보면 다음과 같다.The reaction scheme is simplified and the reaction scheme of the ClO 3 etching solution showing the importance of sodium chlorate, copper and chlorine is as follows.

Cu0+ CuCl2→ 2CuCl(3)Cu 0 + CuCl 22 CuCl (3)

6CuCl+ NaClO3+ 6HCl→ 6CuCl2 + 3H2O + NaCl(4)6CuCl + NaClO3+ 6HCl → 6CuCl2 + 3H2O + NaCl (4)

동 성분은 기판의 동박으로부터 공급되어지고 CuCl2는 에칭작업액(페액)중에 함유되어 회로를 부식하며((3)에칭공정), 염소산나트륨, 염소는 산화작용((4)재생공정)을 하며 보충하는 재생조성물과 염산에 함유되어 있다.The copper component is supplied from the copper foil of the substrate, CuCl 2 is contained in the etching working liquid (penetration) to corrode the circuit ((3) etching process), and sodium chlorate and chlorine are oxidized ((4) regeneration process) It is contained in the regeneration composition and hydrochloric acid to supplement.

재생조성물에 의한 Cu 부식은 (3), (4)의 공정이 반복적으로 이루어져 실시된다.Cu corrosion by the regenerated composition is carried out by repeating the steps (3) and (4).

따라서 가장 좋은 결과를 얻기 위하여 작업자는 비중(Cu), pH(염소), 흡광도(작업액의 Cu 이온)의 관계를 잘 파악하고 액조성을 가장 효과적으로 조절하는 것이 중요하다.Therefore, in order to obtain the best results, it is important for the operator to understand the relationship between specific gravity (Cu), pH (chlorine), and absorbance (Cu ions in the working solution) and to adjust the liquid composition most effectively.

본 발명을 첨부된 도면을 참조한 실시예 로서 더 상세히 설명한다.The present invention will be described in more detail with reference to the accompanying drawings.

도 1 에서 재생조성물탱크(1)와 염산 탱크(2)로 부터 각각 펌프(3)(3')를 거쳐 에칭 쳄버(5)로 펌핑하여 에칭액을 조성한다.In FIG. 1, the etching composition is formed by pumping the regeneration composition tank 1 and the hydrochloric acid tank 2 through the pumps 3 and 3 'to the etching chamber 5, respectively.

본 발명 재생조성물은 에칭액 리터당 산화제로서 염소산나트륨(NaClO3)170-230 g/ℓ, 0.5-1.5wt%의 1,2,3 benzotriazole, polytriazole과 그 혼합물의 동박 부식억제제, 1-3wt%의 박리촉진제, 0.1wt%의 묽은 알코올 알콕시레이트나 에틸렌 산화물과 프로필렌 산화물의 블록공중합체(block coplymer) 계통의 억제제겸, 계면활성제, 0.3wt% 아민류의 단독이나 혼합물로서 이루어지는 첨가제 및 정제된 탈이온수를 혼합하여 조성하며, 이때 동시에 투입되는 산화 보조제로서 바람직하기로는 재생조성물 1 : 35% 염산 1.3~1.5 의 비율, 더욱 바람직하기로는 재생조성물 1 : 35% 염산 1.4 의 비율로 공급한다.The regenerated composition of the present invention is sodium chlorate (NaClO 3 ) 170-230 g / l, 0.5-1.5 wt% 1,2,3 benzotriazole, polytriazole and mixture thereof, copper foil corrosion inhibitor, 1-3 wt% Accelerator, 0.1 wt% dilute alcohol alkoxylate or inhibitor of block coplymer system of ethylene oxide and propylene oxide. At this time, preferably, the regeneration composition 1: 35% hydrochloric acid 1.3 to 1.5, and more preferably the regeneration composition 1: 35% hydrochloric acid 1.4.

재생조성물Regenerated Composition

보충액Supplement 구분division 규격standard 재생조성물Regenerated Composition 조성Furtherance (NaClO3+ 첨가제 + 탈이온수)(NaClO 3 + additive + deionized water) 외관Exterior 무색투명액상Colorless transparent liquid 비중importance 1.089 ∼ 1.289(1.189±0.1)1.089 to 1.289 (1.189 ± 0.1) pHpH 6 ∼ 8(7±1)6 to 8 (7 ± 1) 35% HCl35% HCl ready to useready to use

에칭작업액Etching Work Solution

작업액Working fluid 구분division 사용조건Conditions of use 쳄버Chamber 온도Temperature 50 ∼ 54℃(52±2℃)50 to 54 ° C (52 ± 2 ° C) 외관Exterior 녹청색 반투명 액상Cyan Translucent Liquid 비중importance 1.40 ∼ 1.45(1.425±0.025)1.40 to 1.45 (1.425 ± 0.025) ORPORP 560 mv ∼ 620mv (최적584 mv)560 mv ~ 620mv (optimum 584 mv) Cu 농도Cu concentration 200 ∼ 230 g/ℓ(215 ±15g/ℓ)200 to 230 g / l (215 ± 15 g / l) pHpH 1.3 ∼ 1.5(1.4 ± 0.1)1.3 to 1.5 (1.4 ± 0.1)

에칭 장비 조건Etching equipment condition

항 목Item 구분division 환 기Ventilation 필수necessary Cl2+ ClO2가스 발생 위험Cl 2 + ClO 2 gas generation risk 순 환cycle 필수necessary 쳄버 1 turn/3minChamber 1 turn / 3min 스프레이spray 필수necessary 30 ∼ 35 psi30 to 35 psi 가열기, 냉각기Burner, cooler 필수necessary 석영, 테프론, 프라시솔 등의 코팅 강철Coated steels such as quartz, teflon, prassol 필 터filter 필요need 탄소여과 또는 일반 PP 수세 가능한 필터 사용Use of carbon filtration or common PP washable filters 자동공급(Auto Dosing)Auto Dosing 필요need 자동공급 센서에 의한 자동 공급Automatic feeding by automatic feeding sensor 공급 속도Feed rate HCl 10/min : 재생조성물 4/minHCl 10 / min: Regenerated composition 4 / min

에칭작업액은 순환펌프(4)에 의하여 순환되며 pH, 비중(S.G), 온도(T),흡광도(Abs) 를 측정하여 데이터 입력하고 데이터와 비교하여 데이터를 출력하여 정량펌프를 제어하며 PC 로 연결하여 모니터하고 데이터를 기록하고 연속 제어한다.The etching work solution is circulated by the circulation pump (4). The pH, specific gravity (SG), temperature (T), and absorbance (Abs) are measured to input data and compare the data to output the data to control the metering pump. Connect, monitor, record and continuously control data.

탈이온수를 20℃로 승온하고 투입한다.The temperature of deionized water is raised to 20 ° C. and added.

재생조성물 1 : 35% 염산 1.3~1.5 의 비율, 더욱 바람직하기로는 재생조성물 1 : 35% 염산 1.4 의 비율로 공급한다.Regeneration composition 1: 35% hydrochloric acid 1.3 to 1.5 ratio, more preferably regeneration composition 1: 35% hydrochloric acid 1.4 ratio.

공정을 분석 제어하며, 에칭된것을 여과, 포장 제품 검사 출하 한다.Analyze and control the process, filter the etched and inspect the packaged product.

본 발명은 PCB 회로형성용 에칭액의 구리용해량을 200% 증가시켜 생산성을 향상시키고 폐수량을 감소시켜 환경친화적이며 초정밀 회로 재현이 기능하고 종래 와는 달리 PCB 회로에 침투가 없는 에칭작업액을 유지시키는 재생조성물로서 PC를 사용하여 전산화 함으로서 작업관리가 용이하고 데이터 베이스 구축이 가능한 자동공급장치를 제공한다.The present invention improves productivity by increasing the amount of copper dissolved in the PCB circuit forming etching solution by 200%, and reduces the amount of waste water, which is eco-friendly and reproduces ultra-precision circuits. Computerized using PC as a composition, it provides an automatic supply device that can easily manage work and establish a database.

Claims (3)

염소산나트륨계 에칭작업액을 연속작업이 가능하도록 재생시켜주는 재생조성물로서,It is a regeneration composition that regenerates sodium chlorate etching work solution to enable continuous work. 재생조성물 리터당 산화제로서 염소산나트륨(NaClO3)150-250 g/ℓ, 첨가제 40-60 g/ℓ 및 탈이온수로서 조성되는 재생조성물.A regeneration composition composed of 150-250 g / l sodium chlorate (NaClO 3 ) as an oxidant per liter of regeneration composition, 40-60 g / l additive and deionized water. 염소산나트륨계 에칭작업액을 연속작업이 가능하도록 재생시켜주는 산화 보조제로서,Oxidation aid to regenerate sodium chlorate etching work solution for continuous work. 재생조성물 1 : 35% 염산 1.3~1.5 의 비율로 공급하는 공급방법Regenerated composition 1: Supplying method with the ratio of 1.3-1.5 of 35% hydrochloric acid PC와 연결하여 에칭액의 밀도, pH, 흡광도 등을 관리하여 에칭액을 자동으로 공급하고 관리 항목을 30초 간격으로 측정하며, 관리 항목을 모니터 화면애 도표로 표시하여 에칭액 관리를 보다 쉽고 정확하게 할수 있으며, 페널 부식에 사용하는 에칭액을 비중, pH, 포토 셀 센서(photo cell sensor) 제어(controll)로서 연속 작업이 가능하도록 한 PCB 회로형성용 에칭액 공급방법By connecting with PC, it manages etching density, pH, absorbance, etc. to automatically supply etching solution, measure management items every 30 seconds, and display management items on the monitor screen for easier and accurate etching solution management. Method of supplying etching solution for PCB circuit which enables continuous work of etching solution used for panel corrosion as specific gravity, pH, photo cell sensor control
KR1020010042737A 2001-07-16 2001-07-16 Composite in order to recycle etchant which can continuously operate and supply, and the supply method KR20030006809A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040107546A (en) * 2003-06-13 2004-12-21 이승희 an etching solution
KR101014009B1 (en) * 2005-05-25 2011-02-22 강훈 Develop etching strip contriller
CN103593103A (en) * 2013-12-03 2014-02-19 广东泰通科技股份有限公司 Film removing and oxidization resisting synchronous processing method of copper plated ITO of capacitive touch screen inductor in yellow-light technology

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4696717A (en) * 1984-10-19 1987-09-29 International Business Machines Corporation Process for automatically regenerating copper chloride etch solutions
JPH02122084A (en) * 1988-10-28 1990-05-09 Nec Corp Method for controlling concentration of copper in hydrogen peroxide-sulfuric acid etching solution
JPH09228076A (en) * 1996-02-21 1997-09-02 Nippon Precision Circuits Kk Controlling device for chemical liquid
KR19990062521A (en) * 1997-12-19 1999-07-26 맥긴-로코, 인코포레이티드 Copper surface preparation method for improved bonding, compositions used therein and articles made therefrom
KR20010044026A (en) * 2000-03-08 2001-06-05 홍성현 Etching composition for copper or copper alloy and method for etching copper or copper alloy using the same
JP2001262373A (en) * 2000-03-24 2001-09-26 Yoshikazu Kobayashi Cupric chloride etching liquid composition
JP2001348685A (en) * 2000-06-06 2001-12-18 Yoshikazu Kobayashi System for controlling cupric chloride-sodium chlorate etching solution

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4696717A (en) * 1984-10-19 1987-09-29 International Business Machines Corporation Process for automatically regenerating copper chloride etch solutions
JPH02122084A (en) * 1988-10-28 1990-05-09 Nec Corp Method for controlling concentration of copper in hydrogen peroxide-sulfuric acid etching solution
JPH09228076A (en) * 1996-02-21 1997-09-02 Nippon Precision Circuits Kk Controlling device for chemical liquid
KR19990062521A (en) * 1997-12-19 1999-07-26 맥긴-로코, 인코포레이티드 Copper surface preparation method for improved bonding, compositions used therein and articles made therefrom
KR20010044026A (en) * 2000-03-08 2001-06-05 홍성현 Etching composition for copper or copper alloy and method for etching copper or copper alloy using the same
JP2001262373A (en) * 2000-03-24 2001-09-26 Yoshikazu Kobayashi Cupric chloride etching liquid composition
JP2001348685A (en) * 2000-06-06 2001-12-18 Yoshikazu Kobayashi System for controlling cupric chloride-sodium chlorate etching solution

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040107546A (en) * 2003-06-13 2004-12-21 이승희 an etching solution
KR101014009B1 (en) * 2005-05-25 2011-02-22 강훈 Develop etching strip contriller
CN103593103A (en) * 2013-12-03 2014-02-19 广东泰通科技股份有限公司 Film removing and oxidization resisting synchronous processing method of copper plated ITO of capacitive touch screen inductor in yellow-light technology
CN103593103B (en) * 2013-12-03 2016-08-17 广东泰通科技股份有限公司 The stripping of a kind of capacitive touch screen induction apparatus copper facing ITO gold-tinted technique and antioxidation synchronization processing method

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