KR20030003368A - Method for clearing particles of wafer - Google Patents

Method for clearing particles of wafer Download PDF

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Publication number
KR20030003368A
KR20030003368A KR1020010039105A KR20010039105A KR20030003368A KR 20030003368 A KR20030003368 A KR 20030003368A KR 1020010039105 A KR1020010039105 A KR 1020010039105A KR 20010039105 A KR20010039105 A KR 20010039105A KR 20030003368 A KR20030003368 A KR 20030003368A
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KR
South Korea
Prior art keywords
wafer
fine particles
particles
megasonic
cathode water
Prior art date
Application number
KR1020010039105A
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Korean (ko)
Inventor
곽흥식
최근민
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020010039105A priority Critical patent/KR20030003368A/en
Publication of KR20030003368A publication Critical patent/KR20030003368A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations

Abstract

PURPOSE: A method for clearing particles of wafer is provided to remove particles of wafer by applying megasonic(700-1200 kHz) to alkaline cathode water instead of a high temperature and high density SC-1 chemical solution. CONSTITUTION: In a situation of being particles on a wafer(31), megasonic is applied to a cathode water in which an electrolyte between 1 and 000 ppm is added and current between 40-90 A is applied to become pH 7.5-13.5, and has ORP:-300--1200mV, removing the particles.

Description

웨이퍼의 미립자 제거 방법{Method for clearing particles of wafer}Method for clearing particles of wafer

본 발명은 웨이퍼의 미립자 제거 방법에 관한 것으로, 특히 고온, 고농도 SC-1 화학 용액 대신에 알카리성 캐소드 물에 메가소닉을 가하여 웨이퍼의 미립자를 제거하므로 소자의 원가 절감시키는 웨이퍼의 미립자 제거 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for removing fine particles of a wafer, and more particularly, to a method for removing fine particles of a wafer, which reduces the cost of devices by adding megasonic to alkaline cathode water instead of high temperature and high concentration SC-1 chemical solution. .

반도체 소자는 매년 집적도의 증가 추세를 보이고 있으며, 이러한 집적도의 증가는 소자 각각의 구성 요소 면적 및 크기의 감소를 수반하게 되어 여러 가지 공정상의 제약을 맞게 된다.Semiconductor devices show an increase in the degree of integration every year, and the increase in the density is accompanied by a reduction in the area and size of each component of the device to meet various process constraints.

종래의 웨이퍼의 미립자 제거 방법은 도 1a에서와 같이, 웨이퍼(11)에 미립자(13)가 발생된다.In the conventional method for removing fine particles of the wafer, as shown in FIG. 1A, fine particles 13 are generated on the wafer 11.

도 1b에서와 같이, NH4OH:H2O2:DI가 1:1~4:5~50인 고온, 고농도 SC-1 화학 용액에 300 ~ 600W의 에너지와 700 ~ 1200㎑의 주파수인 메가소닉(Megasonic)을 가하여 상기 미립자(13)를 제거한다.As shown in FIG. 1B, Mega is an energy of 300-600 W and a frequency of 700-1200 Hz in a high temperature, high concentration SC-1 chemical solution with NH 4 OH: H 2 O 2 : DI of 1: 1-4: 5-50. Sonication is added to remove the fine particles 13.

즉, 상기 웨이퍼에 밴 덜 할스(Van der Waals) 힘으로 미립자가 부착되어 있을 경우, 상기 웨이퍼를 고온, 고농도 SC-1 화학 용액에 담근 후 상기 미립자를 상기 밴 덜 할스 힘보다 큰 메가소닉 에너지를 인가하여 제거한다.That is, when the fine particles are attached to the wafer by Van der Waals force, the wafer is immersed in a high temperature, high concentration SC-1 chemical solution, and then the fine particles are applied to the megasonic energy greater than the van der Waals force. Approved and removed.

이때, 상기 고온, 고농도 SC-1 화학 용액이 알카리(9~10pH)인 경우 실리콘(Si)이나 SiO2기판과 상기 미립자가 같은 부호의 제타(Zetal) 전위를 갖게되어 척력이 발생하므로 상기 웨이퍼에 미립자가 부착되는 것을 방지한다.In this case, when the high-temperature, high-concentration SC-1 chemical solution is alkali (9-10 pH), the silicon (Si) or SiO 2 substrate and the fine particles have a zeta potential of the same sign, and thus repulsive force is generated on the wafer. Prevents fine particles from adhering

그러나, 종래의 웨이퍼의 미립자 제거 방법은 고온, 고농도 SC-1 화학 용액을 사용하여 웨이퍼의 미립자를 제거하기 때문에 환경 측면에서 나쁘고 소자 생산비용이 증가하는 문제점이 있었다.However, the conventional method for removing the fine particles of the wafer has a problem in that it is bad in terms of environment and the device production cost increases because the fine particles of the wafer are removed by using a high-temperature, high-concentration SC-1 chemical solution.

본 발명은 상기의 문제점을 해결하기 위해 안출한 것으로 고온, 고농도 SC-1 화학 용액 대신에 알카리성 캐소드 물에 메가소닉을 가하여 웨이퍼의 미립자를 제거하므로, 환경 측면에서 좋고 소자의 원가 절감하는 웨이퍼의 미립자 제거 방법을 제공하는데 그 목적이 있다.In order to solve the above problems, the present invention removes the fine particles of the wafer by applying megasonic to alkaline cathode water instead of the high temperature and high concentration SC-1 chemical solution. The purpose is to provide a removal method.

도 1a와 도 1b는 종래 기술에 따른 웨이퍼의 미립자 제거 방법을 나타낸 공정 단면도.1A and 1B are cross-sectional views illustrating a method of removing particulates from a wafer according to the prior art.

도 2a와 도 2b는 본 발명의 실시 예에 따른 웨이퍼의 미립자 제거 방법을 나타낸 공정 단면도.2A and 2B are cross-sectional views illustrating a method of removing particulates from a wafer according to an embodiment of the present invention.

< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>

11, 31: 웨이퍼 13, 33: 미립자11, 31: wafer 13, 33: fine particles

본 발명의 웨이퍼의 미립자 제거 방법은 웨이퍼에 미립자가 발생된 상태에서, 전해물질은 1~1000ppm 사이에서 첨가하고, 전류를 40~90A인가하여 pH7.5~13.5, ORP:-300 ~ -1200mV를 갖는 캐소드 물에 메가소닉을 가하여 상기 미립자를 제거는 단계를 포함하여 이루어짐을 특징으로 한다.In the method for removing fine particles of the wafer of the present invention, in the state in which fine particles are generated in the wafer, the electrolyte is added between 1 and 1000 ppm, and 40 to 90 A is applied to the pH 7.5 to 13.5 and ORP: -300 to -1200 mV. And removing the fine particles by adding megasonic to the cathode water.

상기와 같은 본 발명에 따른 웨이퍼의 미립자 제거 방법의 바람직한 실시 예를 상세히 설명하면 다음과 같다.Referring to the preferred embodiment of the method for removing particles of the wafer according to the present invention as described above in detail.

도 2a와 도 2b는 본 발명의 실시 예에 따른 웨이퍼의 미립자 제거 방법을 나타낸 공정 단면도이다.2A and 2B are cross-sectional views illustrating a method of removing particulates from a wafer according to an embodiment of the present invention.

본 발명의 실시 예에 따른 웨이퍼의 미립자 제거 방법은 도 2a에서와 같이, 웨이퍼(31)에 미립자(33)가 발생된다.In the method of removing fine particles of the wafer according to the embodiment of the present invention, fine particles 33 are generated in the wafer 31, as shown in FIG. 2A.

도 2b에서와 같이, 전해물질은 1~1000ppm 사이에서 첨가하고, 전류를 40~90A인가하여 pH7.5~13.5, ORP:-300 ~ -1200mV를 갖는 캐소드(Cathode) 물에 메가소닉을 가하여 상기 미립자(33)를 제거한다.As shown in Figure 2b, the electrolytic material is added between 1 ~ 1000ppm, 40 ~ 90A by applying a current to the cathode (Cathode) water having a pH 7.5 ~ 13.5, ORP: -300 ~ -1200mV The fine particles 33 are removed.

즉, 상기 웨이퍼에 밴 덜 할스(Van der Waals) 힘으로 미립자가 부착되어 있을 경우, 상기 웨이퍼를 캐소드 물에 담근 후 상기 미립자를 상기 밴 덜 할스 힘보다 큰 메가소닉 에너지를 인가하여 제거한다.That is, when the fine particles are attached to the wafer by Van der Waals force, the fine particles are removed by applying megasonic energy greater than the van less Hals force after immersing the wafer in cathode water.

이때, 상기 캐소드 물이 알카리 특성을 가지므로 실리콘(Si)이나 SiO2기판과 상기 미립자가 같은 부호의 제타(Zetal) 전위를 갖게되어 척력이 발생하므로 상기 웨이퍼에 미립자가 부착되는 것을 방지한다.At this time, since the cathode water has an alkali property, the silicon (Si) or SiO 2 substrate and the fine particles have a Zeta potential having the same sign, thereby generating repulsion, thereby preventing the fine particles from adhering to the wafer.

본 발명의 웨이퍼의 미립자 제거 방법은 고온, 고농도 SC-1 화학 용액 대신에 알카리성 캐소드 물에 메가소닉을 가하여 웨이퍼의 미립자를 제거하므로, 환경 측면에서 좋고 소자의 원가 절감 효과가 있다.The fine particle removal method of the wafer of the present invention removes the fine particles of the wafer by applying megasonic to alkaline cathode water instead of the high temperature and high concentration SC-1 chemical solution.

Claims (1)

웨이퍼에 미립자가 발생된 상태에서,With fine particles generated on the wafer, 전해물질은 1~1000ppm 사이에서 첨가하고, 전류를 40~90A인가하여 pH7.5~13.5, ORP:-300 ~ -1200mV를 갖는 캐소드 물에 메가소닉을 가하여 상기 미립자를 제거는 단계를 포함하는 웨이퍼의 미립자 제거 방법.Electrolyte is added between 1 ~ 1000ppm, applying a current of 40 ~ 90A to remove the fine particles by applying megasonic to the cathode water having a pH 7.5 ~ 13.5, ORP: -300 ~ -1200mV Method of removing particulates.
KR1020010039105A 2001-06-30 2001-06-30 Method for clearing particles of wafer KR20030003368A (en)

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