KR200283226Y1 - Emitter Tip Structure for Field Emission Display Devices - Google Patents
Emitter Tip Structure for Field Emission Display Devices Download PDFInfo
- Publication number
- KR200283226Y1 KR200283226Y1 KR2019970014797U KR19970014797U KR200283226Y1 KR 200283226 Y1 KR200283226 Y1 KR 200283226Y1 KR 2019970014797 U KR2019970014797 U KR 2019970014797U KR 19970014797 U KR19970014797 U KR 19970014797U KR 200283226 Y1 KR200283226 Y1 KR 200283226Y1
- Authority
- KR
- South Korea
- Prior art keywords
- field emission
- emitter tip
- emission display
- tip structure
- pixel
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/02—Electrodes other than control electrodes
- H01J2329/04—Cathode electrodes
- H01J2329/0407—Field emission cathodes
- H01J2329/041—Field emission cathodes characterised by the emitter shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
본 고안은 저항이 균일한 단위화소를 갖는 금속 전계방출 표시소자용 에미터 팁 구조에 관한 것이다. 본 고안에 따라 단위화소를 원형으로 형성하여 화소와 캐소드전극 사이의 거리가 모든 부분에서 일정하게 되어 저항도 균일하므로 화소 내의 모든 에미터의 전위차가 같아지게 된다.The present invention relates to an emitter tip structure for a metal field emission display device having a unit pixel of uniform resistance. According to the present invention, since unit pixels are formed in a circular shape, the distance between the pixel and the cathode electrode is constant at all portions, and the resistance is uniform, so that the potential difference of all emitters in the pixel is equal.
Description
본 고안은 전계방출 표시소자의 에미터 팁 구조에 관한 것으로, 더 상세하게는 단위화소를 원형으로 형성함으로써, 저항이 균일하도록 한 에미터 팁 구조에 관한 것이다.The present invention relates to the emitter tip structure of the field emission display device, and more particularly, to an emitter tip structure in which the resistance is uniform by forming unit pixels in a circular shape.
일반적으로 전계방출 표시소자용 에미터 팁 구조는 팁 형상을 하는 소정의 금속 또는 실리콘 등에 높은 전기장을 인가하여 하판 상의 팁으로부터 전자를 방출하여 상판에 형성되어 있는 형광층을 발광시켜 영상을 표시하는 디스플레이 장치이다.In general, the emitter tip structure for a field emission display device displays an image by emitting an electron from a tip on a lower plate by applying a high electric field to a predetermined metal or silicon having a tip shape to emit light from a fluorescent layer formed on the upper plate. Device.
이 중 금속을 이용한 전계방출 표시소자용 에미터 팁 제조시, 일반적으로 캐소드 전극의 전류를 제한 할 목적으로 금속층 위에 저항층을 형성한다. 이렇게 형성된 저항층의 전류 제어를 용이하게 하기 위하여 캐소드전극과 화소사이에 거리를 일정하게 둔다.Among them, when manufacturing an emitter tip for a field emission display device using metal, a resistive layer is generally formed on the metal layer for the purpose of limiting the current of the cathode electrode. In order to facilitate the current control of the resistance layer thus formed, a distance is maintained between the cathode electrode and the pixel.
종래 전계방출 표시소자용 에미터 팁 구조에서는, 도 1에 도시된 바와 같이, 단위화소(3)가 사각형일 경우, 단위화소를 구획하고 있는 저항층(2) 즉, 캐소드전극(1)과 화소(3) 사이의 간격은 모서리 부분과 꼭지점 부분이 상이하게 되어 저항층(2)을 통과하는 저항의 크기가 불균일하게 된다.In the conventional emitter tip structure for a field emission display device, as shown in FIG. 1, when the unit pixel 3 is a quadrangle, the resistive layer 2 partitioning the unit pixel, that is, the cathode electrode 1 and the pixel The gap between (3) is different from the corner portion and the vertex portion, the size of the resistance passing through the resistance layer (2) becomes nonuniform.
따라서, 화소전체에 걸리는 전위가 달라져서 전계방출이 불균일하게 된다는 문제점이 있다.Therefore, there is a problem that the electric field emission becomes uneven because the potential across the entire pixel is changed.
따라서, 본 고안은 상기한 문제점을 해결하기 위하여 안출된 것으로, 화소를 원형으로 형성하여 캐소드전극과 화소 사이의 거리를 일정하게 함으로써, 일정한 저항을 갖는 전계방출 표시소자용 에미터 팁을 제공한다.Accordingly, the present invention has been made to solve the above-described problems, and by providing a emitter tip for a field emission display device having a constant resistance by forming a pixel in a circular shape to make the distance between the cathode electrode and the pixel constant.
도 1 은 종래의 전계방출 표시소자용 에미터 팁 구조.1 is an emitter tip structure for a conventional field emission display device.
도 2 는 본 고안에 따른 전계방출 표시소자용 에미터 팁 구조.2 is an emitter tip structure for a field emission display device according to the present invention.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
1 : 캐소드 전극 2 : 저항층1 cathode electrode 2 resistive layer
3, 4 : 단위화소3, 4: unit pixel
이하, 도면을 참조하여 본 고안의 구성을 상세하게 설명하면 다음과 같다.Hereinafter, the configuration of the present invention with reference to the drawings in detail.
도 2에 나타난 바와 같이, 본 고안에 따라 단위화소(4)를 원형으로 형성하고, 단위화소를 구획하고 있는 저항층을 원형으로 형성하므로서, 저항층을 통과하는 저항의 크기가 화소 전체에 걸쳐 균일하게 된다.As shown in FIG. 2, the unit pixel 4 is formed in a circle according to the present invention, and the resistance layer partitioning the unit pixel is formed in a circle, so that the size of the resistance passing through the resistance layer is uniform throughout the pixel. Done.
따라서, 캐소드 전극(1)과 단위화소(4) 사이의 저항층의 저항이 균일하게 되어 화소 내의 모든 에미터의 전위 차가 같아지게 된다.Therefore, the resistance of the resistive layer between the cathode electrode 1 and the unit pixel 4 becomes uniform, so that the potential difference of all emitters in the pixel becomes equal.
이상에서 설명한 바와 같이, 본 고안에 의한 전계방출 표시소자용 에미터 팁 구조에 의해, 저항층을 통과하는 일정한 크기의 저항을 형성하여 정확하게 전류를 제어할 수 있으며, 또한 화소 내의 모든 에미터에 일정한 크기의 전위를 형성할 수 있다.As described above, the emitter tip structure for the field emission display device according to the present invention can form a constant resistance passing through the resistive layer to accurately control the current, and is uniform to all emitters in the pixel. It is possible to form dislocations of magnitude.
Claims (1)
Priority Applications (1)
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KR2019970014797U KR200283226Y1 (en) | 1997-06-19 | 1997-06-19 | Emitter Tip Structure for Field Emission Display Devices |
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KR2019970014797U KR200283226Y1 (en) | 1997-06-19 | 1997-06-19 | Emitter Tip Structure for Field Emission Display Devices |
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KR19990001350U KR19990001350U (en) | 1999-01-15 |
KR200283226Y1 true KR200283226Y1 (en) | 2002-10-30 |
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KR2019970014797U KR200283226Y1 (en) | 1997-06-19 | 1997-06-19 | Emitter Tip Structure for Field Emission Display Devices |
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1997
- 1997-06-19 KR KR2019970014797U patent/KR200283226Y1/en not_active IP Right Cessation
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