KR200264831Y1 - susceptor assembly - Google Patents

Abstract

The present invention relates to a susceptor assembly that penetrates the bottom of a chamber defining a reaction zone enclosed therein so as to support the wafer to be seated in the reaction zone, and includes a cylindrical susceptor support tube passing through the bottom of the chamber. ; A first hole communicating with the susceptor support tube, a first disk-shaped bottom surface coupled to an upper end of the susceptor support tube, and a first sidewall protruding vertically along an edge of the first bottom surface; With a septum base; An insulating plate mounted inside the susceptor base and having a second hole communicating with the first hole; A second bottom surface which is seated inside the susceptor base to the upper portion of the second insulating plate and has a third hole communicating with the second hole and a pattern protruding upward, and vertically protrudes along an edge of the second bottom surface; A block disk comprising a second sidewall, the second sidewall being positioned at substantially the same height as the first sidewall; A heating disk seated inside the block disk; A heating line embedded in an inner surface of the heating disc, the ends of which are connected to the outside via the third and second holes and the first hole in order; An upper part of the heating disc, the rear surface is provided with a susceptor assembly including a susceptor coupled to be in close contact on the first side wall of the susceptor base and the second side wall of the block disk.

Description

Susceptor assembly

The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to support a wafer that penetrates the bottom of a chamber having a reaction region enclosed therein and is seated inside the reaction region of the chamber. It relates to a receptor assembly.

In recent years, with the development of science, the field of new materials, which enables the development and processing of new materials, has been rapidly developed, and the development results of these materials are driving the development of the semiconductor industry.

A semiconductor device is a large scale integration (LSI) that is realized through a process of depositing and patterning a thin film several times on an upper surface of a wafer, and depositing and patterning such a thin film. The process of this process is usually carried out in a chamber-like process module comprising a chamber which is a closed reaction vessel.

In the chamber, a susceptor for mounting a wafer supplied in a sheet is installed. The uniformity, line width, profile, and repeatability of the thin film deposited or patterned on the wafer are installed. In order to improve the heat, the heating device is usually mounted inside the susceptor.

In more detail with reference to FIG. 1, which is an exploded perspective view of a typical susceptor assembly, it includes an insulating plate 18 and a block disk inside a bowl-shaped susceptor base 14. 20 and a heating disk 22 are sequentially seated, and a susceptor lid 24 is covered with an upper portion thereof.

In other words, the susceptor base 14 made of Al ₂ O ₃ is coupled to the upper end of the susceptor support tube 12 which penetrates the bottom of the chamber (not shown) and is introduced into the reaction zone. 14 has a bowl shape including a disk-shaped first bottom surface 14a made of a metal material and a first sidewall 14b projecting vertically along an edge of the first bottom surface. The insulating plate 18, the block disc 20, and the heating disc 22 are stacked in this order, and the susceptor 24 is coupled to the top surface of the first side wall 14b.

At this time, in particular, a first hole 14c communicating with the inside of the susceptor support tube 12 is installed at the center of the first bottom surface 14a of the susceptor base 14. A plurality of connection stages 16 branched from an external power supply (not shown) are introduced into the bar, and each element constituting the susceptor assembly 10 to be described later is connected through the first hole 14c. It is connected to the stage (16).

In addition, the insulating plate 18 seated inside the susceptor base 14 has a disk shape made of an insulating material such as quartz, and in the center thereof, a second hole 18a corresponding to the first hole described above is formed. Penetrated

In addition, on the upper surface of the insulating plate 18, a block disk 20 including a second disc bottom surface 20a having a disc shape and a second side wall 20b protruding vertically along the edge of the second bottom face 20a is provided. The block disk 20 is usually made of an insulating material such as quartz, like the insulating plate 18, and has a third hole (3) corresponding to the above-described first and second holes 14c and 18a in the center of the bottom surface. 20c).

In addition, the heating disk 22 is seated inside the block disk 20, which has a heating line 22a made of a material such as an electro thermal wire so as to have a predetermined pattern on its inner surface. End of the heating line 22a constitutes a terminal 23 connected to the connection end 16 via the third and second holes 20c and 18a and the first hole 14c, respectively. have.

In recent years, in order to obtain higher productivity, the diameter of the wafer tends to be expanded to 300 mm or more, which is larger than the conventional 200 mm. During the processing of such a large-area wafer, the wafer edge and the center to edge are particularly Heating to different temperatures is frequently observed.

Thus, in order to prevent the temperature difference due to such a position and to heat the wafer more reliably, the above-described heating line 22a is embedded in the center of the heating disk 22, respectively, and the first heating line 22a shown in dotted line. -1) and the second heating line 22a-1 embedded in the outer side may be used.

On the upper portion of the heating disk 22, a susceptor 24 is coupled to the rear surface to be in close contact with the upper surface of the first side wall 14b of the susceptor base 14 described above. ) Is usually made of a material such as graphite (Si) or SiC to seat the wafer on the upper surface.

Therefore, when the wafer is seated on the susceptor assembly 10, in particular, the susceptor 24, the heating disc (eg, the terminal 23 is electrically connected to the connection end 16 branched from an external power supply). Power is supplied to the heating line 22a of 22, and the heating line 22a generates heat to heat the wafer.

In this case, the block disk 20 made of an insulating material has a bowl shape including the second side wall 20b so that heat generated from the heating disk 22 can be concentrated in the wafer direction.

At this time, referring to Figure 2 showing a coupling cross-section of the general susceptor assembly 10, the block disk in the state in which the insulating plate 18 and the block disk 20 is placed in the interior of the susceptor base 14, It can be seen that the heating disk 22 is seated in the interior of the block 20, where the block disk 20 concentrates heat generated from the heating disk 22 in the wafer direction, that is, in the susceptor 24 direction. It has been described above to play a role.

However, as shown in the drawing, since the second sidewall 20b of the conventional block disk 20 has the height h of about the heating disk 22, the first sidewall 14b of the susceptor base 14 is shown. When the susceptible 24 is coupled to the upper surface, a portion of the inner surface of the first sidewall 14b is exposed in the direction of the heating disk 22 like the A portion.

Therefore, a part of the heat generated from the heating disk 22 is transferred to the first side wall 14b of the susceptor base 14 made of a highly conductive metal material, which causes the susceptor base 14 to be heated. The heating phenomenon of the susceptor base 14 is that the heat generated from the heating disc 22 is not sufficiently concentrated in the wafer direction, and thus the thermal efficiency of the heating disc 22 is greatly reduced.

In addition, when the first side wall 14b of the susceptor base 14 is heated, heat is conducted to the edge portion of the susceptor 24 seated on the upper surface, so that the nonuniform temperature distribution of the susceptor 24 is increased. This results in a significant damage to the film uniformity of the edge and center portions of the wafer.

In addition, during the process, as the heating line (see 22a in FIG. 1) embedded in the heating disk 22 is heated, deformation such as bending or twisting of the heating disk 22 often occurs. The deformation of (22) prevents the reliable connection of the terminal (23) and the heating line (22a) and at the same time causes arcing due to contact with the susceptor (24), and also transfers heat to the wafer. Local differences can also interfere with the correct processing of the wafer.

The present invention is to solve the problems as described above, so that the deformation of the heating disk is not bent or distorted due to the heating of the heating line in the process progress, in particular, the heat generated from the heating disk effectively uniformly wafer Its purpose is to provide an improved susceptor assembly that can be delivered to.

1 is an exploded perspective view of a typical susceptor assembly

2 is a cross-sectional view of a typical susceptor assembly

3 is an exploded perspective view of the susceptor assembly according to the present invention

4 is a cross-sectional view of the susceptor assembly according to the present invention

5 is a plan view of a block disk included in the susceptor assembly according to the present invention

<Description of the symbols for the main parts of the drawings>

112: susceptor support tube 114: susceptor base

114a: first bottom surface 114b: first sidewall

114c: first hole 116: connecting end

118: insulation plate 118a: second hole

120: block disk 120a: the second bottom

120b: second sidewall 120c: third hole

120d: Pattern 122: Heating disc

122a: heating line 123: terminal

124: Sustained

The present invention relates to a susceptor assembly that penetrates the bottom surface of a chamber defining a reaction region enclosed therein and supports the wafer to be seated in the reaction region in order to achieve the above object, and penetrates the bottom surface of the chamber. A cylindrical susceptor support tube; A first hole communicating with the susceptor support tube, a first disk-shaped bottom surface coupled to an upper end of the susceptor support tube, and a first sidewall protruding vertically along an edge of the first bottom surface; With a septum base; An insulating plate mounted inside the susceptor base and having a second hole communicating with the first hole; A second bottom surface which is seated inside the susceptor base to the upper portion of the second insulating plate and has a third hole communicating with the second hole and a pattern protruding upward, and vertically protrudes along an edge of the second bottom surface; A block disk comprising a second sidewall, the second sidewall being positioned at substantially the same height as the first sidewall; A heating disk seated inside the block disk; A heating line embedded in an inner surface of the heating disc, the ends of which are connected to the outside via the third and second holes and the first hole in order; An upper part of the heating disc, the rear surface is provided with a susceptor assembly including a susceptor coupled to be in close contact on the first side wall of the susceptor base and the second side wall of the block disk.

In this case, the susceptor base is made of Al ₂ O ₃ , the insulating plate and the block disk are each made of quartz, and the susceptor is selected from graphite or SiC.

In addition, the pattern protruding on the bottom surface of the block disk, the first pattern consisting of a plurality of radial straight lines passing through the third hole; And a plurality of second patterns formed in island shapes at positions corresponding to each other about the third hole.

In this case, in particular, the heating line is a heating wire, characterized in that divided into a first heating line buried toward the center of the heating disc, and a second heating line buried outward of the first heating line, wherein The pattern protruding on the bottom surface may further include a circular third pattern that separates the portions in which the first and second heating lines are embedded.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

3 is an exploded perspective view of the susceptor assembly 100 according to the present invention, which is a susceptor support tube 112 introduced into the reaction region through the bottom of the chamber and the susceptor base 114 coupled to the upper end thereof. And an insulating plate 118 sequentially stacked in the susceptor base 114, a block disc 120, a heating disc 122, and a susceptor 124.

That is, the susceptor base 114 coupled to the upper end of the susceptor support tube 112 that penetrates the bottom of the chamber and is introduced into the reaction region has a first bottom surface 114a having a disc shape and the first bottom surface. It has a bowl shape including a first sidewall (114b) projecting vertically along the edge of (114a), the insulating plate 118, the block disk 120 and the heating disk 122 inside the bowl shape ) Is stacked, and the susceptor 124 is coupled to the first sidewall 114b.

At this time, the susceptor base 114 is preferably made of a metal material such as Al ₂ O ₃ , in particular in the center of the upper surface of the susceptor base 114, the first communicating with the interior of the susceptor support tube 112 The hole 114c is installed to be electrically connected to the connecting end 116 branched from an external power supply device and the like and to each of the elements of the susceptor assembly described later.

In addition, the insulating plate 118 seated inside the susceptor base 114 is preferably a disk shape made of an insulating material such as quartz, and at the center thereof, the first of the susceptor base 114 described above. The second hole 118a corresponding to the hole 114c is penetrated.

In addition, on the upper surface of the insulating plate 118, similar to the susceptor base 114, a disk-shaped second bottom surface 120a and a second side wall 120b vertically protruding along the edge of the second bottom surface 120a. The bowl-shaped block disk 120 including the is placed, this block disk 120 is preferably made of an insulating material such as quartz, the same as the insulating plate 118 described above, the second bottom thereof A third hole 120c corresponding to the first and second holes 114c and 118a described above is formed at the center of the 120a.

In this case, the second bottom surface 120a of the block disk 120 according to the present invention includes a protruding pattern 120d. In particular, the second sidewall 120b includes the first sidewall of the susceptor base 114 described above. Characterized in that it is positioned at the same height as (114b).

Referring to FIG. 5, which illustrates a plan view thereof, a shape of the pattern 120d protruding from the second bottom surface 120a of the block disk 120 may be variously modified according to a purpose, but the heating disk 122 described later. Bar and the bottom surface of the block disk 120 is not in close contact, preferably a plurality of radial linear agent passing through the central third hole (120c) for stable support of the heating disk 122 The first pattern 120d-1 and the plurality of protruding island-shaped second patterns 120d-2 are arranged in the same number at positions corresponding to each other about the third hole 120c. .

3, the heating disk 122 is seated inside the block disk 120. The heating disk 122 is embedded with a heating line 122a made of a heating wire material to have a predetermined shape on its inner surface. The ends of the heating line 122a are connected to the connecting end 116 inside the susceptor support tube 112 via the third and second holes 120c and 118a and the first hole 114c, respectively. The terminal 123 is electrically connected.

On the other hand, in the above-described general case, due to the large area of the wafer, the heating line 120a is embedded toward the center of the heating disk 120, respectively, and the first heating line 120a-1 shown in dotted lines and the outside It may be divided into a second heating line (120a-2) buried in the side, in this case, in particular in the pattern (120d) protruding on the bottom surface of the block disk 120, a plurality of linear first unfolded While connecting the pattern 120d-1, the first and second heating lines 122a-1 and 122a-2 preferably include a circular third pattern 120d-3 for dividing the embedded region. (See Figure 5)

In addition, the upper part of the heating disk 120, the susceptor 124, the edge of the back surface is in close contact with the first side wall 114b of the susceptor base 114 described above is coupled, at this time, the block according to the present invention Since the second sidewall 120b of the disk 120 is also positioned at the same height as the first sidewall 114b of the susceptor base 114, the top surface of the second sidewall 120b is also positioned on the lead frame 124. It adheres to the bottom.

At this time, the susceptible 124 is preferably made of a material such as graphite or Sic.

Accordingly, when the wafer is seated on the susceptor assembly 100 according to the present invention, particularly the susceptor 124, the terminal 123 electrically connected to the connection terminal 116 branched from an external power supply device is provided. The power is supplied to the heating line 120a of the heating disk 122, through which the heating line 120a heats and heats the wafer. In this case, the block disk 120 according to the present invention is a second embodiment. Since the upper surface of the sidewall 120b is in close contact with the rear surface of the susceptible 124, heat is effectively concentrated in the wafer direction.

That is, referring to FIG. 4, which shows a coupling cross-section of the susceptor assembly 100 according to the present invention, the insulating plate 118 and the block disk 120 are sequentially stacked in the susceptor base 114. In the state, it can be seen that the heating disk 122 is seated inside the block disk 120.

In this case, in particular, the heating disk 122 is seated on the pattern 120d protruding from the second bottom surface 120a of the block disk 120, and the second sidewall 120b of the block disk 120 is susceptor base. It has a height H that is equally aligned with the first sidewall 114b of 114, so that the bottom of the susceptor 124 has a first sidewall 114b and a block disk of the susceptor base 114, respectively. It is closely coupled to the upper end of the second sidewall 120b of 120.

The present invention provides a protruding pattern on the bottom surface of the block disk on which the heating disk is seated, and concentrates the heat generated in the heating disk in the direction of the wafer by aligning the sidewall thereof at the same height as the sidewall of the susceptor base. Has an effect.

Thus, the wafer on the susceptive can be heated more uniformly and effectively, i.e., compared with the general case, the side wall of the block disk is in close contact with the bottom surface of the susceptive, so that the heat of the heating disc is reduced to other elements such as the side wall of the susceptor base. This prevents the temperature gradient of the wafer and at the same time enables more uniform and efficient wafer heating.

In addition, by providing a protruding pattern on the bottom of the block disk, the heating disk is spaced apart from the bottom of the block disk, by blocking the heat transferred directly between them can significantly reduce the deformation, such as bending or warping the heating disk. It is.

Claims (5)

A susceptor assembly that penetrates the bottom surface of a chamber defining a reaction zone enclosed therein to support a wafer to be seated in the reaction zone. A cylindrical susceptor support tube penetrating the bottom of the chamber; A first hole communicating with the susceptor support tube, a first disk-shaped bottom surface coupled to an upper end of the susceptor support tube, and a first sidewall protruding vertically along an edge of the first bottom surface; With a septum base; An insulating plate mounted inside the susceptor base and having a second hole communicating with the first hole; A second bottom surface which is seated inside the susceptor base to the upper portion of the second insulating plate and has a third hole communicating with the second hole and a pattern protruding upward, and vertically protrudes along an edge of the second bottom surface; A block disk comprising a second sidewall, the second sidewall being positioned at substantially the same height as the first sidewall; A heating disk seated inside the block disk; A heating line embedded in an inner surface of the heating disc, the ends of which are connected to the outside via the third and second holes and the first hole in order; A susceptor coupled to the top of the heating disc such that a rear surface thereof is brought into close contact with the first side wall of the susceptor base and the second side wall of the block disc; Susceptor assembly comprising a The method according to claim 1, The susceptor base is made of Al ₂ O ₃ , the insulating plate and the block disk are each made of quartz, and the susceptor is a susceptor assembly selected from graphite or SiC. The method according to claim 1, The pattern protruding on the bottom surface of the block disk, A first pattern comprising a plurality of radial straight lines passing through the third hole; A plurality of second patterns formed in island shapes at positions corresponding to each other with respect to the third hole; Susceptor assembly comprising a The method according to claim 1, The heating line is a heating wire, A susceptor assembly divided into a first heating line buried toward the center of the heating disc and a second heating line buried outward of the first heating line. The method according to claim 4, The pattern protruding on the bottom surface of the block disk, Circular third pattern for dividing the portion where the first and second heating lines are embedded Susceptor assembly further comprising