KR200244239Y1 - Waste gas transfer pipe and waste gas treatment apparatus using the same - Google Patents

Abstract

The invention devises fine dust on the inner wall of the waste gas conveying pipe, which serves as a passage for supplying harmful waste gas and fine dust generated from the pretreatment facilities such as the semiconductor process semiconductor equipment to the post-treatment facility, thereby narrowing the pipeline of the waste gas conveying pipe. The present invention relates to a waste gas transport pipe having a fine dust deposition prevention film formed on an inner wall of a waste gas transport pipe and a waste gas treatment device to which a fine dust deposition prevention film is applied. The waste gas is transported by the waste gas transport pipe connected to the exhaust port to prevent the fine dust generated during the waste gas treatment process from being deposited inside the waste gas transport pipe and the waste gas treatment device that processes the waste gas. Waste caused by narrow pipe Ever's not the process defects by suppressing the flow rate variation, and at the same time and extends significantly the cleaning cycle of the waste gas feed pipe and a waste gas treatment apparatus.

Description

Waste gas transfer pipe and waste gas treatment apparatus using the same

The present invention relates to a waste gas transfer pipe and a waste gas treatment apparatus employing the same, and more particularly, waste gas serving as a passage for supplying harmful waste gas and fine dust generated from a pretreatment facility such as a semiconductor facility for semiconductor processing to a post treatment facility. The present invention relates to a waste gas conveying pipe and a waste gas treatment device employing the same, in which fine dust is deposited on the inner wall of the waste gas conveying pipe in order to prevent the fine dust from being deposited on the inner wall of the conveying pipe to narrow the conduit of the waste gas conveying pipe. .

Recently, the semiconductor industry, which has undergone rapid technological developments, has a great impact on the entire field, from the electronics industry, the computer industry, and the aerospace industry.

As such, the semiconductor industry, which affects almost all industries, uses a large amount of toxic chemical gases which are very harmful to human body and nature. However, when conducting semiconductor processes by semiconductor facilities, only a small amount of toxic chemical gases participates in the semiconductor process. The waste gas is discharged to the outside as a waste gas, wherein the waste gas is composed of unreacted chemical gas, high temperature fine dust generated after the semiconductor process, and reacted gas generated after the reaction.

At this time, the waste gas is very harmful to the human body and the natural world and can not be immediately released into the atmosphere, and must be discharged to the atmosphere after the post-treatment, only harmless gas satisfying the legal and environmental requirements.

In this way, the waste gas generated after the semiconductor process in the semiconductor facility is introduced into the waste gas conveying pipe through the waste gas exhaust port formed in the semiconductor facility, and the waste gas introduced into the waste gas conveying pipe is introduced into the waste gas treatment device and treated. This is released into the atmosphere.

However, when the waste gas generated in the semiconductor facility is discharged to the waste gas treatment device through the waste gas conveying pipe, the high temperature fine dust contained in the waste gas passes through the waste gas conveying pipe which is relatively low temperature compared with the fine dust, By the condensed and condensed fine dust is continuously deposited on the inner wall of the waste gas conveying pipe is to gradually narrow the interior of the waste gas conveying pipe.

As the inside of the waste gas conveying pipe becomes narrow, many problems occur. When a flow rate less than the predetermined waste gas flow rate to pass through the waste gas conveying pipe passes through the waste gas conveying pipe, the waste gas treating device has a predetermined waste gas flow rate. The flow rate of the waste gas treatment apparatus is lowered due to the inflow of less flow, and the flow rate of the semiconductor equipment is lower than that of the preset waste gas to be discharged from the semiconductor equipment. Even if there is no problem in the process environment, there is a problem that a semiconductor process defect occurs.

Another problem caused by the narrowing of the inside of the waste gas transport pipe by the deposited fine dust has a problem of periodically cleaning the waste gas transport pipe or replacing the waste gas transport pipe.

For example, the fine dust deposited inside the waste gas conveying pipe becomes very hard as the deposition strength gradually increases over time, so that the blowing pressure is increased in the waste gas conveying pipe. It is not possible to remove agglomerated fine dust deposited inside.

In this case, it is almost impossible to clean the inner wall of the waste gas conveying pipe after dismantling the waste gas conveying pipe from the semiconductor equipment and the waste gas processing device, or to clean the inner wall of the waste gas conveying pipe if the length of the waste gas conveying pipe is very long. At the same time, it is not possible to completely remove the fine dust deposited, so the pipes for the waste gas transport should be replaced periodically.

As a result, the time for which the semiconductor equipment is not operated becomes long, and the efficiency of operating the semiconductor equipment is poor, so that a large number of process delays occur throughout the semiconductor manufacturing process that must be continuously performed, or a plurality of waste gas treatment devices are installed to prevent process delays. It must be installed, and there is a lot of difficulty in cleaning and replacing the waste gas pipe.

Therefore, the present invention has been made in view of the various problems as described above, and an object of the present invention is to form a fine dust coating film on the inside of the waste gas transport pipe to form a fine dust is deposited inside the waste gas transport pipe to the waste gas transport pipe It is to prevent the inside from narrowing.

Other objects of the present invention will become more apparent from the detailed description of the invention to be described later.

1 is a block diagram showing an embodiment of a waste gas treatment apparatus to which a fine dust deposition prevention film according to the present invention is applied.

Figure 2 is a conceptual diagram showing in more detail the waste gas treatment apparatus of FIG.

Figure 3 is a partially cut-away perspective view of the waste gas transfer pipe is applied to the anti-dust coating film according to the present invention.

4 is a cross-sectional view taken along the line A-A of FIG.

5 is an exemplary view comparing a part of the waste gas transport pipe having a fine dust deposition prevention film according to the present invention and a part of the conventional waste gas transport pipe not having the fine dust deposition prevention film according to the present invention.

Waste gas transfer pipe according to the present invention for achieving the object of the present invention is a pipe installed for the waste gas transfer between the facilities used in the semiconductor process or between different facilities, the deposition prevention film of a predetermined thickness on the inner wall By coating, the fine dust is prevented from directly contacting the surface of the inner wall, and the fine dust is transportable without being loaded on the anti-deposition film.

In addition, the waste gas treatment apparatus employing the fine dust deposition prevention film according to the present invention is in communication with the waste gas conveying pipe, waste gas conveying pipe through which waste gas including fine dust, unreacted gas and reactive gas discharged from the semiconductor facility passes, waste gas is communicated with waste gas A first post-treatment facility comprising a mixer forming means for mixing air and an inert gas to form a mixer, and an oxidizing means for oxidizing the mixer so that the mixer is separated into purified gas and fine dust; And a second post-treatment facility in communication with the first post-treatment facility by a connection pipe and a connection pipe through which fine dust passes, and including a dust collecting means for collecting fine dust by separating purified gas and fine dust. The inner wall of the waste gas conveying pipe through which dust passes, the inner wall of the mixer forming means, the inner wall of the connecting pipe, and the inner wall of the dust collecting means. Optionally, fine dust deposition prevention film is formed.

Hereinafter, the configuration and operation of the waste gas transfer pipe and waste gas treatment apparatus employing the same according to the present invention will be described in more detail.

Waste gas transfer piping according to the present invention is between the semiconductor facility 100 and the after-treatment facility 200 such that the semiconductor facility 100 and the after-treatment facility 200 is in communication with each other, as shown in the conceptual diagram of FIG. It is applied to or between the first after-treatment facility 220 and the second after-treatment facility 230 installed inside the after-treatment facility 200.

At this time, the waste gas transport pipe (210,230) is a corrosion-resistant stainless steel pipe is formed inside the waste gas transport pipe (210,230) as shown in Figure 3 fine dust deposition prevention film 235 having a thickness of several μm do.

The fine dust deposition preventing film 235 is coated with a teflon, which is a fluorine resin system, according to an embodiment. Preferably, polytetrafluoroethylene may be used.

The use of Teflon in the formation of the fine dust coating layer 235 is due to the chemical and physical properties of Teflon.Teflon has a very stable chemical structure, which is low in reactivity, and when coated, the surface is smooth to lubricate with other friction materials and heat resistance. By having a non-adhesive property that fine dust is not deposited on the surface.

Referring to this in more detail with reference to the exemplary view of Figure 5 attached to the waste gas conveying pipe 240 shown in the left side of Figure 5 waste gas is a predetermined time in a state that the fine dust deposition preventing film 235 is not formed on the inner wall 5, the waste gas transport pipe 250 shown on the right side of FIG. 5 is a state in which the waste gas passes for a predetermined time while the fine dust deposition prevention film 235 is formed on the inner wall. Fine dust is hardly deposited on the formed waste gas conveying pipe 250, but a large amount of fine dust is deposited on the waste gas conveying pipe 240 in which the fine dust deposition preventing film 235 is not formed. .

2 shows a waste gas treatment apparatus in which a fine dust deposition prevention film is formed as an example, the waste gas treatment apparatus 300 is a first post-treatment facility in communication with the exhaust port 10 of the semiconductor device 100 as a whole. 220, a second aftertreatment facility 230 in communication with the first aftertreatment facility 220.

More specifically, the first after-treatment facility 220 is a waste gas oxidizer that oxidizes waste gas and transforms it into harmless particles. The waste gas oxidizer manifold 222 serves to mix air and inert gas to waste gas. It consists of an oxidation chamber 224 which oxidizes a mixture of waste gas-air-inert gas at a predetermined temperature.

At this time, in one embodiment, one end of the waste gas conveying pipe 210 communicates with the manifold 222, and the other end of the waste gas conveying pipe 210 communicates with the exhaust port 10 of the semiconductor device 100. .

On the other hand, it is preferable that a blower 214 is installed in the middle of the waste gas conveying pipe 210 to prevent the pressure of the waste gas exhausted from the semiconductor device 100 at a constant flow rate from being lowered due to the loss of the pipe head.

The fine dust is disposed in the inner wall of the waste gas conveying pipe 210 connecting the semiconductor facility 100 and the manifold 222 of the first aftertreatment facility 220, and inside the manifold 222. In order to prevent deposition on the inner wall of the 210 and the inside of the manifold 222, a fine dust deposition prevention film is formed, and the fine dust deposition prevention film is preferably made of polytetrafluoroethylene.

Meanwhile, the waste gas discharged from the semiconductor facility 100 passes through the waste gas conveying pipe 210 and the manifold 222 and is then oxidized in the oxidation chamber 224 to phase-convert to purified gas and fine dust in a high temperature state. After that, the purified gas and the high-temperature fine dust are introduced into the second aftertreatment facility 230 through the connection pipe 240 again, and the second aftertreatment facility 230 is an example of fine dust and refined gas. It is a fine dust collector for separating.

In one embodiment, the fine dust collector is a cyclone dust collector that centrifugally separates the purified gas and the fine dust by applying centrifugal force to the purified gas and the fine dust. The cyclone dust collector has an upper and a lower end and has a cylindrical shape. The cyclone dust collector body 232 having, the purified gas-fine dust mixer inlet hole (not shown) formed in the tangential direction of the outer circumferential surface of the cyclone dust collector body 232, the open upper end of the cyclone dust collector body 232 The connected fine gas exhaust pipe 234, the fine dust collecting container 236 connected to the open lower end of the cyclone dust collector body 232.

At this time, the connection pipe 240 for communicating the oxidation gas chamber 224 of the first after-treatment facility 220 and the inlet hole of the purified gas-fine dust mixer of the cyclone dust collector body 236 of the second after-treatment facility 230. ), The inner wall of the cyclone dust collector body 232, the inner wall of the fine dust container 236, the inner wall of the refinery gas exhaust pipe 234, so that the fine dust mixed in the purified gas is not deposited in one embodiment polytetrafluoro An ethylene fine dust coating film is formed.

Reference numeral 238 denotes a blower for a cyclone dust collector, and 250 denotes a main duct.

Referring to the accompanying drawings, the action of the waste gas treatment apparatus to which the fine dust deposition prevention film according to the present invention configured as described above will be described.

First, the waste gas in which the high temperature fine dust, the unreacted chemical gas and the reactant gas are mixed from the semiconductor facility 100 is managed through the waste gas exhaust port 10 and the waste gas conveying pipe 210. Flows into the folder 222.

At this time, the high temperature fine dust exhausted through the waste gas exhaust port 10 of the semiconductor device 100 is cooled and condensed while passing through the waste gas conveying pipe 210 having a lower temperature than the fine dust, thereby condensing the waste gas conveying pipe 210. Although it is intended to be deposited on the inner wall of the waste gas transport pipe 210, the fine dust is prevented from being deposited on the inner wall of the condensed fine dust coating film is condensed fine dust is not deposited on the waste gas transport pipe 210. Do not.

The waste gas exhausted from the semiconductor facility 100 is mixed with air and an inert gas so as to have a condition suitable for being oxidized in the manifold 222 of the first aftertreatment facility 220, and a mixer having a predetermined mixing ratio is formed. It enters the oxidation chamber 224 having a predetermined temperature suitable for oxidation of the mixer.

The mixer introduced into the oxidation chamber 224 is heated toward the lower portion of the oxidation chamber 224 and is oxidized at a predetermined position of the oxidation chamber 224 so that the mixer is phase-converted into a mixture of purified gas and chemically stable fine dust. After being introduced into the second post-treatment facility 230 through the aforementioned connection pipe 240.

At this time, the fine dust in the high temperature state generated in the oxidation chamber 224 is cooled and condensed while passing through the connection pipe 240 having a lower temperature than the fine dust is to be deposited on the inner wall of the connection pipe 240, but the connection pipe 240 The inner wall of the fine dust is prevented from being deposited so that the fine dust is not deposited, the fine dust is not condensed.

On the other hand, the fine dust and the purified gas passing through the connection pipe 240 is introduced into the cyclone dust collector body 232 through the tangential direction of the outer peripheral surface of the cyclone dust collector of the second after-treatment facility (230).

At this time, the waste gas including the fine dust and the purified gas introduced into the cyclone dust collector body 232 receives a predetermined centrifugal force, but the relatively heavy fine dust is relatively affected by the centrifugal force and thus the cyclone dust collector body 232. Moving along the inner wall and moving downwards under the influence of gravity. The gas is stored in the fine dust container 236 and the purified gas is transferred to the next cyclone dust collector through the refinery gas exhaust pipe 234 and at least once. After dust collection is performed, it is discharged to the outside.

At this time, since the inner wall of the cyclone dust collector body 232 has a long time of contact with the condensed fine dust, the fine dust is to be deposited on the inner wall of the cyclone dust collector body 232, but the inner wall of the cyclone dust collector body 232 And since the fine dust deposition prevention film of polytetrafluoroethylene material is formed on the inner wall of the purified gas exhaust pipe 234 is not deposited.

As described in detail above, a waste gas treatment apparatus for processing waste gas and waste gas while the waste gas is supplied by the waste gas conveying pipe connected to the waste gas exhaust port of a semiconductor facility for discharging a large amount of fine dust, and processing the waste gas. By preventing the deposition of fine dust generated during the waste gas treatment process inside, the waste gas flow fluctuations are reduced, and the fluctuation of the waste gas flow generated by narrowing the waste gas is prevented, so that process defects are not generated. There is an effect of significantly extending the cleaning cycle of.

Claims (3)

In the piping installed for the waste gas transfer between the equipment used in the semiconductor process or between different equipment, The inner wall is coated with an anti-deposition film of a predetermined thickness mainly composed of polytetra fluoro ethylen, thereby preventing direct contact of fine dust on the surface of the inner wall and loading the fine dust on the anti-deposition film. Waste gas transfer pipe, characterized in that the transfer without. A waste gas conveying pipe through which waste gas including fine dust, unreacted gas, and reactant gas discharged from a semiconductor facility passes; A first post including a mixer forming means communicating with the waste gas conveying pipe to mix air and an inert gas into the waste gas to form a mixer, and oxidizing means to oxidize the mixer to separate the mixer into purified gas and fine dust Processing equipment; A connection pipe communicating with the oxidation means and through which the purified gas and the fine dust pass; And a second post-treatment facility in communication with the first post-treatment facility by the connecting pipe, the second post-treatment facility including dust collecting means for separating the fine gas and the fine dust to collect the fine dust. The inner wall of the waste gas conveying pipe through which the fine dust passes, the inner wall of the mixer forming means, the inner wall of the connecting pipe and the inner wall of the dust collecting means are selectively made of polytetra fluoro ethylen as the main material. Waste gas treatment device, characterized in that the fine dust deposition prevention film of thickness formed. 5. The waste gas treating apparatus according to claim 4, wherein the dust collecting means is a cyclone dust collecting device for centrifuging the purified gas and the fine dust.