KR200236982Y1 - Conditioner of chemical-mechanical polishing apparatus - Google Patents

Abstract

The present invention relates to a conditioner of a chemical mechanical polishing apparatus, and the end effector 310 and the upper side of the end effector 310 to form new pores on the surface of the polishing pad 110 by rotating in contact with the surface of the polishing pad 110; The gearbox 320 which is connected downward to the vertical rotation shaft 321, the conditioner motor 330 connected to the gearbox 320 to provide rotational force, and the gearbox 320 and the conditioner motor 330 inside In the conditioner 300 of the chemical mechanical polishing apparatus consisting of the conditioner housing 340 mounted on the end, the end effector 310 is coupled to the vertical rotation shaft 321 of the gearbox 320 so as to be located at the upper end of the end effector 310. ) And a blocking member 350 that blocks the ultrapure water particles from entering the conditioner housing 340 and the gearbox 320 when the ultrapure water is cleaned. Prevents particles from entering the conditioner housing and gearbox, increasing the life of various parts and conditioner motors inside the gearbox, and keeping the conditioner motor at regular rotational ratios, resulting in a stable chemical mechanical polishing process have.

Description

Conditioner for chemical mechanical polishing equipment {CONDITIONER OF CHEMICAL-MECHANICAL POLISHING APPARATUS}

The present invention relates to a conditioner of a chemical-mechanical polishing device, and more particularly, to prevent ultrapure particles from entering the conditioner housing and the gearbox. A conditioner of a chemical mechanical polishing device for increasing the lifespan.

In the process of manufacturing a semiconductor device, a structure having a step is formed on a semiconductor wafer. An interlayer dielectric (ILD) is formed for the purpose of insulating the interlayer and planarizing the entire surface of the resultant surface on which the structure is formed. Immediately after the interlayer dielectric is formed, the surface shape of the structure under the interlayer dielectric, i. Also appears in the interlayer insulating film. Therefore, the planarization process is performed after forming the interlayer insulating film or the material layer for the planarization purpose.

In recent years, as the semiconductor wafer has been large-sized, a chemical-mechanical polishing process that combines chemical removal processing and mechanical removal processing in one processing method has been widely used to planarize the widened surface of the semiconductor wafer. The chemical mechanical polishing process is a method in which a surface of a semiconductor wafer having a step is brought into close contact with a polishing pad and a slurry containing an abrasive and a chemical is injected between the semiconductor wafer and the polishing pad to planarize the surface of the semiconductor wafer.

1 is a schematic view showing a conventional chemical mechanical polishing apparatus. As shown, a platen 100 having a polishing pad 110 attached to the top surface and a semiconductor wafer W mounted on the top surface of the polishing pad 110 of the platen 100 are polished. The polishing head 200 and the conditioner 300 to micro-cut the surface of the polishing pad 110 so that new micropores come out on the surface.

The platen 100 attaches a polishing pad 110 to which the semiconductor wafer W is polished on an upper surface thereof, and forms a rotating shaft 120 connected to a driving means not shown on the lower surface to perform a simple rotational movement by the driving means. do.

The polishing head 200 is positioned on an upper surface of the polishing pad 110 of the platen 100 and has a polishing housing 210 on which the semiconductor wafer W is mounted, and a rotating shaft 221 coupled to the upper side of the polishing housing 210. It is composed of a polishing arm 220 to rotate the polishing housing 210 to form a) and to transfer to a predetermined place.

The polishing housing 210 is provided with a wafer chuck and a wafer adsorption pad (not shown) for adsorbing and supporting the semiconductor wafer (W) at the lower side, and prevents the semiconductor wafer (W) from being separated during polishing on the outer circumferential surfaces of the wafer chuck and the wafer adsorption pad. A retainer ring (211) is provided, and the polishing arm (220) is provided with a rotating shaft (221) for applying a constant polishing pressure to the polishing housing (210) and rotating and reciprocating the polishing housing (210). do.

The conditioner 300 is located on the upper surface of the polishing pad 110 and finely cuts the surface of the polishing pad 110 so as not to block a large number of foamed pores that serve to contain a slurry on the surface of the polishing pad 110. To form the pores on the surface of the 110, as shown in Figure 2, the end effector 310 to form new pores on the surface of the polishing pad 110 by rotating in contact with the surface of the polishing pad 110, A gearbox 320 having a vertical rotation shaft 321 connected to an upper side of the end effector 310 downward, a conditioner motor 330 connected to the gearbox 320 to provide rotational force, and a gearbox 320. And a conditioner housing 340 for mounting the conditioner motor 330 inside.

The end effector 310 has a diamond grid 311 mounted on the lower side thereof, and a vertical rotation shaft 321 of the gearbox 320 is coupled to the upper side thereof.

The gearbox 321 has a first bevel gear 322 and the second bevel gear 323 is vertically engaged therein, the first bevel gear 322 is a rotating shaft 331 of the conditioner motor 330. Is coupled to, the second bevel gear 323 is a vertical rotation shaft 321 protruding to the lower surface of the gear box 320 is formed.

The housing 340 is coupled to a transfer arm 341 which operates left and right with a driving means, not shown, and a gear box 320 and a conditioner motor 330 are mounted therein. The gearbox 320 mounted on the housing 340 has a vertical rotation shaft 321 protruding downward through the lower surface of the housing 340, and an end effector 310 is disposed at the lower end of the protruding vertical rotation shaft 321. Combined.

The operation of the conditioner of the conventional chemical mechanical polishing apparatus having such a structure is as follows.

As the end effector 310 rotates in contact with the surface of the polishing pad 110, the surface of the polishing pad 110 is minutely cut by the diamond grid 311 mounted below the end effector 310, thereby polishing the polishing pad 110. It allows the formation of new micropores that serve to contain the slurry on the surface. The rotational force of the end effector 310 is provided by the conditioner motor 330 transmitted through the gearbox 320.

The conditioner 300 is a predetermined operation is completed, it is necessary to remove the slurry attached to the end effector 310 by using ultrapure water.

3 is a schematic diagram illustrating cleaning the conditioner of the chemical mechanical polishing apparatus of FIG. 1. As shown,

Slurry adhered to the end effector 310 and the diamond grid 311 by ultrapure water sprayed from the ultrapure water supply nozzles 410 and the ultrapure water supply array 420 respectively provided on the side and bottom surfaces of the end effector 310. Remove

In the cleaning process of the end effector 310 and the diamond grid 311, fine ultrapure particles are formed through a through hole (not shown) of the housing 340 and the gearbox 320 through which the vertical rotation shaft 321 passes. 320, the rust is generated in the first and second bevel gears 322 and 323 provided in the gearbox 320.

The rust-produced first and second bevel gears 322 and 323 cause an abnormality in the rotational ratio (RPM) of the conditioner motor 330. Due to the abnormality of the rotational ratio, the conditioner motor 330 rotates irregularly, and the expensive conditioner There is a problem that the life of the motor 330 is significantly reduced.

In addition, since the rotation ratio of the conditioner motor 330 is irregular, fine pores are not uniformly reproduced on the surface of the polishing pad 110, thereby lowering the yield of the semiconductor wafer.

The present invention is to solve the above-mentioned conventional problems, the purpose of the present invention is to prevent the ultra-pure particles from entering the gearbox to improve the life of the various parts and conditioner motors inside the gearbox, the conditioner motor is regular The present invention provides a conditioner for a chemical mechanical polishing apparatus that maintains a rotation ratio and stably performs a chemical mechanical polishing process.

The present invention for realizing the above object, the end effector for forming new pores on the surface of the polishing pad by rotating in contact with the surface of the polishing pad, the gearbox having a vertical rotation axis connected to the upper side of the end effector downward, gearbox In a conditioner of a chemical mechanical polishing device comprising: a conditioner motor connected to provide a rotational force; and a conditioner housing for mounting the conditioner motor inside the gearbox; It characterized in that it comprises a blocking member for blocking the ultra-pure particles into the conditioner housing and the gearbox when cleaning the end effector with ultrapure water.

The blocking member is formed in a disk shape, characterized in that the Teflon material.

1 is a schematic view showing a conventional chemical mechanical polishing apparatus,

2 is a perspective view showing the conditioner of the chemical mechanical polishing apparatus of FIG. 1;

3 is a schematic diagram illustrating cleaning the conditioner of the chemical mechanical polishing apparatus of FIG. 1, FIG.

Figure 4 is a perspective view showing a conditioner of the chemical mechanical polishing apparatus according to the present invention,

FIG. 5 is a schematic diagram illustrating cleaning the conditioner of the chemical mechanical polishing apparatus of FIG. 4. FIG.

<Description of Symbols for Main Parts of Drawings>

300: conditioner 310: end effector

321: diamond grid 320: gearbox

321: vertical axis of rotation 322: first bevel gear

323: second bevel gear 330: conditioner motor

340: housing 350: blocking member

Hereinafter, with reference to the accompanying drawings, the most preferred embodiment of the present invention will be described in more detail so that those skilled in the art can easily practice.

Figure 4 is a perspective view showing the conditioner of the chemical mechanical polishing apparatus according to the present invention. As shown, the conditioner 300 is connected to the top of the end effector 310 and the end effector 310 to form new micropores on the surface of the polishing pad 110 by rotating in contact with the surface of the polishing pad 110. The vertical rotation shaft 321 is formed below the gear box 320, the conditioner motor 330 is connected to the gear box 320 to provide a rotational force, the gear box 320 and the conditioner motor 330 inside Conditioner housing 340 to be mounted on, and the blocking member 350 is coupled to the vertical rotation shaft 321 of the gear box 320 to be located on the upper end of the end effector (310).

The end effector 310 has a diamond grid 311 mounted on the lower side thereof, and a vertical rotation shaft 321 of the gearbox 320 is coupled to the upper side thereof.

The gearbox 321 has a first bevel gear 322 and the second bevel gear 323 is vertically engaged therein, the first bevel gear 322 is a rotating shaft 331 of the conditioner motor 330. Is coupled to, the second bevel gear 323 is a vertical rotation shaft 321 protruding to the lower surface of the gear box 320 is formed.

The housing 340 is coupled to a transfer arm 341 operating on a driving means, not shown, and a gearbox 320 and a conditioner motor 330 are mounted therein. The gearbox 320 mounted on the housing 340 has a vertical rotation shaft 321 protruding downward through the lower surface of the housing 340, and an end effector 310 is disposed at the lower end of the protruding vertical rotation shaft 321. Combined.

The blocking member 350 is coupled to the vertical rotation shaft 321 of the gearbox 320 so as to be positioned at the upper end of the end effector 310, so that the conditioner housing 340 and the gearbox 320 when the end effector 310 is cleaned with ultrapure water. To prevent particles of ultrapure water from entering

And, the blocking member 50 is preferably formed in a disk shape. Therefore, even when the blocking member 350 is coupled to the vertical rotation shaft 321 by a stable rotation when rotating the conditioner motor 330 can obtain a regular rotation ratio.

In addition, the blocking member 350 is preferably made of Teflon (teflon) material. Teflon is water. This is because it does not stick to any substances such as oil and maintains the cleanness almost automatically, and has the property of suppressing the generation of static electricity.

The operation of the conditioner of the chemical mechanical polishing apparatus of the present invention having such a structure is as follows.

As the end effector 310 rotates in contact with the surface of the polishing pad 110, the surface of the polishing pad 110 is minutely cut by the diamond grid 311 mounted below the end effector 310, thereby polishing the polishing pad 110. It allows the formation of new micropores that serve to contain the slurry on the surface. The rotational force of the end effector 310 is provided by the conditioner motor 330 transmitted through the gearbox 320.

The conditioner 300 is a predetermined operation is completed, it is necessary to remove the slurry attached to the end effector 310 by using ultrapure water.

5 is a schematic diagram illustrating cleaning the conditioner of the chemical mechanical polishing apparatus of FIG. 3. As shown, from the ultrapure water supply nozzle 410 and the ultrapure water supply array 420 respectively installed on the side and bottom of the end effector 310 to remove the slurry attached to the end effector 310 and the diamond grid 311. Ultrapure water is injected into the end effector 310 and the diamond grid 311.

At this time, the injected ultrapure water collides with the end effector 310 and the diamond grid 311 and bounces into small particles. The particles of the ultrapure water bounced off are prevented from entering the conditioner housing 340 and the gearbox 320 by the blocking member 350 positioned at the top of the end effector 310.

According to a preferred embodiment of the present invention as described above, the first and second bevel gears, etc. mounted in the gearbox by blocking the ultra-pure particles sprayed for cleaning the end effector and the diamond grid into the conditioner housing and the gearbox This prevents rust on related parts. This causes the conditioner motor to rotate at a regular rotation rate.

As described above, the conditioner of the chemical mechanical polishing apparatus according to the present invention prevents ultrapure particles from entering the conditioner housing and the gearbox when the end effector is cleaned with ultrapure water, thereby improving the life of various parts and conditioner motors in the gearbox. In addition, the conditioner motor has the effect of performing a chemical mechanical polishing process stably by maintaining a constant rotation ratio.

What has been described above is just one embodiment for performing the conditioner of the chemical mechanical polishing apparatus according to the present invention, the present invention is not limited to the above embodiment, as claimed in the utility model registration claims below Without departing from the gist of the present invention, anyone with ordinary knowledge in the field to which the present invention belongs will have a technical spirit of the present invention to the extent that various modifications can be made.

Claims (3)

An end effector for forming new pores on the polishing pad surface by rotating in contact with the polishing pad surface, a gearbox having a lower vertical rotation shaft connected to an upper side of the end effector, and connected to the gear box to improve rotational force. In the conditioner of the chemical mechanical polishing apparatus comprising a conditioner motor provided, and a conditioner housing for mounting the gear box and the conditioner motor inside, It is coupled to the vertical axis of rotation of the gearbox to be located at the top of the end effector, characterized in that it comprises a blocking member to block the ultra-pure particles into the conditioner housing and the gearbox when cleaning the end effector with ultrapure water Conditioner for chemical mechanical polishing equipment. The conditioner of claim 1, wherein the blocking member is formed in a disc shape. 3. The conditioner of claim 1 or 2, wherein the blocking member is made of teflon material.