KR20020088866A - Gas supplying device for preventing glogging generation of chemical vapor deposition chamber - Google Patents

Abstract

PURPOSE: A gas supply device for preventing a glogging phenomenon from a CVD(Chemical Vapor Deposition) chamber is provided to prevent processing errors by heating a vaporized process gas. CONSTITUTION: A lower portion of a process manifold(100) is combined with upper screws(101,102) of a center manifold(200). A clean manifold(300) is combined with a back side of the center manifold(200) by a screw(304). A base plate(400) is combined with a bottom face of the center manifold(200). A mask(500) is installed on a bottom of the base plate(400). A chuck(600) is installed under the mask(500). A wafer(601) is loaded on the chuck(600). The center manifold(200) is formed with a ceramic material. Two gas port holes(205,206) and a water path hole(207) are formed on an upper face of the center manifold(200). A plurality of O-rings(201,202,203) are inserted into the gas port holes(205,206) and the water path hole(207), respectively. A water supply hole(103) is formed in front of the process manifold(100). A clean gas supply hole(301) is formed in front of the clean manifold(300). An O-ring(302) is inserted into the clean gas supply hole(301). A gas supply hole(403), a water supply hole(404), and a screw combination groove(405) are formed on an upper face of the base plate(400).

Description

GAS SUPPLYING DEVICE FOR PREVENTING GLOGGING GENERATION OF CHEMICAL VAPOR DEPOSITION CHAMBER}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas supply apparatus of a chemical vapor deposition chamber in a semiconductor manufacturing facility. Particularly, when a CVD process is carried out in a semiconductor manufacturing facility, The present invention relates to a gas supply device that prevents a glogging phenomenon generated when a low temperature contacts a feedthrough.

In general, chemical vapor deposition (CVD) vacuum chambers are used to deposit thin films on semiconductor substrates. Precursor gas is injected into the vacuum chamber through a gas manifold plate located on the substrate, which is generally heated to a processing temperature of about 250 to 650 ° C. The precursor gas reacts on the heated substrate surface to deposit a thin layer on the substrate and form a volatile byproduct gas, and discharges the byproduct gas through the chamber exhaust device.

In order to increase manufacturing efficiency and device performance, recently, the size of devices formed on a substrate has been reduced, and the number of devices formed on the substrate has been increased. Therefore, there is an increasing need for thin films deposited by chemical vapor deposition (CVD) to have a uniform thickness across the substrate so that all devices on the substrate must be uniform. In addition, the need to avoid the generation of particles in the processing chamber is increasing in order to reduce contamination of the substrate which will reduce the yield of a good device.

A prior art chemical vapor deposition (CVD) chamber is disclosed in US Pat. No. 4,892,753, and referring to 4,892,753, in a chemical vapor deposition (CVD) chamber, the susceptor on which the wafer is mounted during processing is a vertically movable lift. (Not shown) to move vertically in the chamber. The plurality of pins support the wafer as the wafer is introduced into the chamber by an external robot blade. Multiple susceptor support fingers are connected to the pins, which are wafer fingers, and can be mounted on the bar and moved vertically by an elevator. The wafer and the susceptor on which it is mounted are heated by a plurality of high intensity lamps through a transparent quartz window. In a preferred configuration, when two sets of quartz windows are present, two lamp banks are located outside the top and bottom of the chamber. The quartz window is sealed against the chamber wall by Teflon sealing. By using such an external heating lamp, the wafer and susceptor can be quickly heated, and the chamber can be cooled between the processing cyclones when the lamp is turned off.

The chemical vapor deposition (CVD) chamber is provided with a gas supply device, which is a process manifold 10 as shown in Figure 1 the screw 11, 12 on top of the center manifold (20) ), The clean manifold 30 is fastened to the rear surface of the center manifold (or feedthrough: 20) with a screw 34, and a base plate ( 40 is fastened, a mask 50 is provided on the bottom of the base plate 40, a chuck 60 is provided below the mask 50, and a wafer 61 is placed on the chuck 60. ) Is up. The center manifold 20 is formed of a Teflon material, and two gas ports 25 and 26 and a water passage hole 27 are formed on an upper surface thereof, and the two gas holes 25 and 26 and water are formed on the upper surface thereof. O-rings 21, 22, and 23 are fitted into the passage holes 27 so that the gas and the coolant do not leak when the process manifold 10 and the center manifold 20 are fastened. The water supply hole 13 is formed in the front surface of the process manifold 10. A clean gas supply hole 31 for supplying clean gas to the front surface of the clean manifold 30 is formed, and an O-ring 32 is inserted into the cooling gas supply hole 31 to the center manifold 20. When the clean manifold 30 is fastened, the clean gas does not leak. The process gas supply hole 43, the water supply hole 44, and the screw fastening groove 45 are formed at the center of the upper surface of the base plate 40, and the O-ring 41 is formed in the process gas supply hole 43. It is fitted so that the process gas does not leak when the center manifold 20 is engaged with the base plate 40. The O-ring 42 is inserted into the water supply hole 44 so that the coolant does not leak when the center manifold 20 is engaged with the base plate 40. The screw fastening groove 45 is fixed to the screw 24 when the center manifold 20 is fastened to the base plate 40.

The gas supply device of the conventional chemical vapor deposition chamber is a state in which the process manifold 10, the center manifold 20, the clean manifold 30, the base plate 40, and the mask 50 are fastened. The liquefied gas supplied during the CVD process is vaporized at a high temperature (150 ° C.) and applied to the center manifold 20 through the process manifold 10. At this time, the center manifold 20 maintains 65 ° C. because the heat exchange cooling water flows through the water supply hole 13. As a result, when the center manifold 20 maintains 65 ° C., when the gas vaporized by the high temperature flows through the process manifold 10, the vaporized gas is solidified again to write on the upper surface of the center manifold 20. Logging (GLOGGING) occurred, there was a problem causing a process failure.

Accordingly, an object of the present invention is to provide a gas supply device for a chemical vapor deposition chamber that can prevent the process failure by the process gas is not solidified in the chemical vapor deposition process to solve the above problems.

It is another object of the present invention to provide a gas supply apparatus for a chemical vapor deposition chamber which prevents the occurrence of a glogged phenomenon by heating so that the vaporized process gas is not solidified in the chemical vapor deposition process.

1 is a gas supply apparatus of a conventional chemical vapor deposition (CVD) chamber

2 is a structural diagram of a gas supply device for a chemical vapor deposition chamber according to an embodiment of the present invention;

3 is a structural diagram of a center manifold 200 according to an embodiment of the present invention

4 is a cross-sectional structure diagram in which the heating coil 29 is mounted according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

100: process manifold 200: center manifold

300: clean manifold 400: base plate

500: mask 600: chuck

The present invention for achieving the above object is a process manifold, a center manifold, the lower portion of the process manifold is fastened with a screw on the top, a clean manifold fastened with a screw on the back of the center manifold, A gas supply apparatus for a chemical vapor deposition chamber having a base plate fastened to a bottom surface of a center manifold and a mask provided on a bottom surface of the base manifold, wherein the center manifold is formed of a ceramic material and formed inside the center manifold. It characterized in that it is formed to surround the outside of the gasket hole formed in the heater coil.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

2 is a structural diagram of a gas supply apparatus of a chemical vapor deposition chamber according to an embodiment of the present invention.

A process manifold 100, a center manifold 200 in which a lower portion of the process manifold 100 is fastened by screws 101 and 102, and a screw 304 on a rear surface of the center manifold 20. Clean manifold 300 is fastened to the base plate 400 is fastened to the bottom of the center manifold 200, the mask 500 is installed on the bottom of the base plate 400, the mask 500 It is provided underneath, and is comprised by the chuck | zipper 600 on which the wafer 601 is raised.

The center manifold 200 is formed of a ceramic material, and two gas ports 205 and 206 and a water passage hole 203 are formed on an upper surface thereof, and the two gas holes 205 and 206 and water are formed on the upper surface thereof. O-rings 201, 202, and 203 are inserted into the passage holes 203, respectively, so that the gas and the coolant do not leak when the process manifold 100 and the center manifold 200 are fastened. The water supply hole 103 is formed at the front of the process manifold 100.

A clean gas supply hole 301 for supplying clean gas to the front surface of the clean manifold 300 is formed, and an O-ring 302 is inserted into the cooling gas supply hole 301 to the center manifold 200. When the clean manifold 300 is fastened, the clean gas does not leak. The process gas supply hole 403, the water supply hole 404, and the screw fastening groove 405 are formed in the center of the upper surface of the base plate 400, and the O-ring 401 is formed in the process gas supply hole 403. It is fitted so that the process gas does not leak when the center manifold 200 is fastened to the base plate 400. The O-ring 402 is inserted into the water supply hole 404 so that the coolant does not leak when the center manifold 200 is engaged with the base plate 400. The screw fastening groove 405 is fixed to the screw 204 when the center manifold 200 is fastened to the base plate 400.

3 is a structural diagram of a center manifold 200 according to an embodiment of the present invention,

4 is a cross-sectional view of the heating coil 29 is mounted according to an embodiment of the present invention.

2 to 4, the operation of the preferred embodiment of the present invention will be described in detail.

The process manifold 100 is fastened by screws 101 and 102 to the top of the center manifold 200, and the clean manifold 300 is fastened to the rear surface of the center manifold 200 by screws 304. The base plate 400 is fastened to the bottom of the center manifold 200, the mask 500 is installed on the bottom of the base plate 400, and the chuck 600 is installed below the mask 500. The wafer 601 is placed on the chuck 600. The center manifold 200 is formed of a ceramic material, and two gas holes 205 and 206 and a water passage hole 207 are formed on the upper surface thereof, and the two gas holes 205 and 206 and the water are formed on the upper surface thereof. O-rings 201, 202, and 203 are fitted into the passage holes 207, respectively, so that the gas and the coolant do not leak when the process manifold 100 and the center manifold 200 are engaged. The water supply hole 103 is formed at the front of the process manifold 100. A clean gas supply hole 301 for supplying clean gas to the front surface of the clean manifold 300 is formed, and an O-ring 302 is inserted into the cooling gas supply hole 301 to the center manifold 200. When the clean manifold 300 is fastened, the clean gas does not leak. The process gas supply hole 403, the water supply hole 404, and the screw fastening groove 405 are formed in the center of the upper surface of the base plate 400, and the O-ring 401 is formed in the process gas supply hole 403. It is fitted so that the process gas does not leak when the center manifold 200 is fastened to the base plate 400. The O-ring 402 is inserted into the water supply hole 404 so that the coolant does not leak when the center manifold 200 is engaged with the base plate 400. The screw fastening groove 405 is fixed to the screw 204 when the center manifold 200 is fastened to the base plate 400.

The gas supply device of the chemical vapor deposition chamber of the present invention is a CVD process in which the process manifold 100, the center manifold 200, the clean manifold 300, the base plate 400, and the mask 500 are fastened. The liquefied gas supplied during the process is vaporized at a high temperature (150 ° C.) and applied to the center manifold 200 through the process manifold 100. At this time, the center manifold 200 has a heater coil 209 wrapped around the outside of the two gasket holes 205 and 206 formed as shown in FIG. Due to this, the center manifold 200 passes through the cooling water for the heat exchanger introduced through the water supply hole 103, but the gas is heated by the heater coil 209, thereby preventing the vaporized gas from solidifying. Do not cause any phenomenon.

As described above, the present invention forms a material of the center manifold 200 which is a feedthrough in a gas supply device of a chemical vapor deposition chamber in a semiconductor manufacturing facility, and uses two gas holes 205 mounted in the ceramic. 206 is installed to surround the heater coil to prevent the vaporized gas from solidifying in the center manifold 200 during the process, thereby preventing the occurrence of the glogged phenomenon.

Claims (2)

A process manifold, a center manifold in which a lower portion of the process manifold is screwed to an upper portion thereof, a clean manifold screwed to a rear surface of the center manifold, a base plate fastened to a bottom surface of the center manifold; In the gas supply apparatus of the chemical vapor deposition chamber having a mask provided on the bottom of the base plate, And the center manifold is formed of a ceramic material and formed so as to surround the outside of the gas hole formed in the center manifold with a heater coil. The method of claim 1, The heater coil is a gas supply device for a chemical vapor deposition chamber, characterized in that during the process of the vaporized gas passes through the gas hole to prevent the solidified by heating the vaporized gas.