KR20020085730A - Pyroelectric infrared sensor - Google Patents
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- KR20020085730A KR20020085730A KR1020010025643A KR20010025643A KR20020085730A KR 20020085730 A KR20020085730 A KR 20020085730A KR 1020010025643 A KR1020010025643 A KR 1020010025643A KR 20010025643 A KR20010025643 A KR 20010025643A KR 20020085730 A KR20020085730 A KR 20020085730A
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- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000010409 thin film Substances 0.000 claims description 51
- 238000000605 extraction Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
Description
본 발명은 초전형 적외선센서 및 그 제조방법에 관한 것으로서, 상세하게는 기판을 에칭하여 개구부를 형성시 압전소자가 손상되는 것을 방지할 수 있도록 된 초전형 적외선센서에 관한 것이다.The present invention relates to a pyroelectric infrared sensor and a method for manufacturing the same, and more particularly, to a pyroelectric infrared sensor that can prevent the piezoelectric element from being damaged when an opening is formed by etching a substrate.
에어컨과 온풍기 등의 제품은 사람수, 사람의 위치 또는 움직임 여부에 따라 출력되는 풍력, 풍향 및 온도를 조절할 필요가 있다. 이를 위하여 상기 제품들은 초전형 적외선센서를 채용한다.Products such as air conditioners and warmers need to adjust the output wind, wind direction and temperature depending on the number of people, the position or movement of people. To this end, the products employ a pyroelectric infrared sensor.
초전형 적외센서는 물체에서 방출되는 빛 또는 열을 검출하여 물체의 위치와, 물체의 수를 감지할 수 있다. 물체의 움직임은 상기 초전형 적외선센서를 복수개 구비하고, 각 센서에 검출되는 빛 또는 열의 변화에 의하여 감지할 수 있다.The pyroelectric infrared sensor may detect light or heat emitted from the object to detect the position of the object and the number of objects. The movement of an object may include a plurality of pyroelectric infrared sensors, and may be detected by a change in light or heat detected by each sensor.
초전형 적외선센서의 일 예가 마쯔시다 전기에 의해 '일본 특개소 63-311124'(초전형 적외선 어레이센서)를 통하여 개시된 바 있다. 이 개시된 초전형 적외선센서는 제1도에 도시된 바와 같은 구성을 가진다.An example of a pyroelectric infrared sensor has been disclosed by Matsushita Electric through JP-A-63-311124 (Pyroelectric Infrared Array Sensor). This disclosed pyroelectric infrared sensor has a configuration as shown in FIG.
기판(1)과, 기판(1)위에 형성된 절연박막(3)과, 절연박막(3)위에 형성된 하부전극(5)과, 그 위의 초전박막(7)과, 그 위의2개의 분리된 상부전극군(9, 15)과, 유기박막(11)으로 구성된다. 상기 기판(1)은 대상물체에서 방출되는 빛이 입사될 수 있도록 된 개구부(17)가 형성되어 있다. 상기 초전박막(7)은 상기 개구부(17)를 통해 입사된 빛을 수광하여 전기신호로 변환한다. 변환된 전기신호는 상기 하부전극(5)과, 상부전극(9)을 통하여 외부로 전달된다. 상기 유기박막(11)은 상기 하부전극(5)과 초전박(박7) 및 상부전극(9)을 상기 기판(1)에 고정하며, 상기 상부전극(9)의 상부는 개구(13) 되어 있다. 상기 절연박막(3)은 상기 개구부(17)를 에칭하여 형성시 에칭액 또는 에칭가스에 의해 상기 초전박막(7)이 손상되는 것을 방지한다.The substrate 1, the insulating thin film 3 formed on the substrate 1, the lower electrode 5 formed on the insulating thin film 3, the superelectric thin film 7 thereon, and the two separated thereon The upper electrode group 9 and 15 and the organic thin film 11 are comprised. The substrate 1 has an opening 17 through which light emitted from an object can be incident. The super thin film 7 receives light incident through the opening 17 and converts the light into an electrical signal. The converted electrical signal is transmitted to the outside through the lower electrode 5 and the upper electrode 9. The organic thin film 11 fixes the lower electrode 5, the super-electrode thin film 7, and the upper electrode 9 to the substrate 1, and the upper portion of the upper electrode 9 is an opening 13. have. The insulating thin film 3 prevents the superelectric thin film 7 from being damaged by the etching solution or the etching gas when the opening 17 is formed by etching the opening 17.
이와 같이 구비된 초전형 적외선센서는 상기 절연박막(3)이 단결정면을 가지는 상기 기판(1)의 상부에 형성되어 있어서, 상기 초전박막(7)의 성막이 잘되지 않았다. 따라서, 양품률이 떨어지고, 생산원가가 상승하는 단점이 있다.In the pyroelectric infrared sensor provided as described above, since the insulating thin film 3 is formed on the substrate 1 having a single crystal surface, the formation of the pyroelectric thin film 7 is difficult. Therefore, there is a disadvantage in that the yield falls and the production cost rises.
본 발명은 언급한 바와 같은 점들을 감안하여 안출된 것으로, 초전박막이 기판 상에 접촉 성막되며, 기판의 에칭시 초전박막이 손상되지 않도록 하는 수단을 구비한 초전형 적외선센서를 제공하는데 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned points, and an object thereof is to provide a pyroelectric infrared sensor having a means for forming a superelectric thin film on a substrate and preventing the superelectric thin film from being damaged when the substrate is etched. .
상기 목적을 달성하기 위하여 본 발명에 따른 초전형 적외선센서는, 개구부를 가지는 기판과 상기 기판 위에 형성되며, 개구된 중앙부를 갖는 하부전극과 상기 하부전극 상에 형성되며, 상기 중앙부를 통해 상기 기판에 접촉 성막된 초전박막과 상기 초전박막의 상면에 부착된 상부전극과 상기 초전박막과 상부전극이 상기 기판에 부착되도록 감싸며 콘택홀을 가지는 유기박막과 상기 유기박막 상부에 형성되며 상기 콘택홀을 통하여 상기상부 전극에 접속되는 인출전극을 구비한 것을 특징으로 한다.In order to achieve the above object, the pyroelectric infrared sensor according to the present invention is formed on a substrate having an opening and the substrate, and is formed on the lower electrode and the lower electrode having an open central portion, and is formed on the substrate through the central portion. The super thin film contacted and the upper electrode attached to the upper surface of the super thin film, the super thin film and the upper electrode is wrapped on the substrate attached to the organic thin film having a contact hole and the organic thin film formed on the upper and through the contact hole An extraction electrode connected to the upper electrode is provided.
제1도는 종래 초전형 적외선센서의 일 예를 나타낸 단면도.1 is a cross-sectional view showing an example of a conventional pyroelectric infrared sensor.
제2도는 본 발명에 따른 초전형 적외선센서를 나타낸 단면도.2 is a cross-sectional view showing a pyroelectric infrared sensor according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
21 : 기판 23 : 하부전극21 substrate 23 lower electrode
25 : 초전박막 27 : 상부전극25: super thin film 27: upper electrode
29 : 유기박막 31 : 콘택홀29: organic thin film 31: contact hole
33 : 인출전극 35 : 개구부33: lead electrode 35: opening
이하, 첨부된 도면들을 참조하여 본 발명에 따른 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
제2도는 본 발명에 따른 초전형 적외선센서를 나타낸 개략적인 단면도이다.2 is a schematic cross-sectional view showing a pyroelectric infrared sensor according to the present invention.
이 초전형 적외선센서는 기판(21)과, 하부전극(23)과, 초전박막(25)과, 상부전극(27)과, 유기박막(39) 및 인출전극(33)을 구비한다.The pyroelectric infrared sensor includes a substrate 21, a lower electrode 23, a pyroelectric thin film 25, an upper electrode 27, an organic thin film 39 and an extraction electrode 33.
상기 기판(21)은 MgO 등의 재료로 된 단결정으로 (100) 또는 (001) 면을 가진다. 이 기판(21)을 단결정으로 하는 이유는 그 상부에 접촉 성막되는 초전박막(25)이 기판(21)의 결정방향으로 성장하도록 하기 위함이다. 이 기판(21)은 중앙에 개구부(35)를 가진다. 이 개구부(35)는 상기 초전박막(25)의 열응력 문제점을 고려하여 상기 초전박막(25) 보다 넓게 형성된 것이 바람직하다. 물체에서방출되는 빛은 상기 개구부(35)를 통하여 상기 초전박막(25)으로 입사된다.The substrate 21 is a single crystal made of a material such as MgO and has a (100) or (001) plane. The reason for using this substrate 21 as a single crystal is to allow the superelectric thin film 25 to be formed in contact with the upper portion to grow in the crystal direction of the substrate 21. The substrate 21 has an opening 35 in the center. The opening 35 is preferably formed wider than the super thin film 25 in consideration of the thermal stress problem of the super thin film 25. Light emitted from the object is incident on the super thin film 25 through the opening 35.
상기 하부전극(23)은 상기 개구부(35)가 형성되지 않은 상태에서 상기 기판(21)위에 형성된다. 이 하부전극(23)은 상기상부전극(27)과 함께 상기 초전박막(25)에서 검출 변환된 전기신호를 외부로 전달하는 부재이다. 이 하부전극(23)은 그 중앙부(24)가 개구되어 있다. 이와 같이 중앙부(24)를 개구하는 이유는 상기 초전박막(25)이 상기 기판(21)에 접촉되어 상기 초전박막(25)이 상기 기판(21)의 결정면을 따라 성장되도록 하기 위함이다.The lower electrode 23 is formed on the substrate 21 in a state where the opening 35 is not formed. The lower electrode 23, together with the upper electrode 27, is a member that transmits an electrical signal detected and converted by the superelectrode thin film 25 to the outside. The center portion 24 of the lower electrode 23 is opened. The reason why the central portion 24 is opened as described above is to allow the superelectric thin film 25 to contact the substrate 21 so that the superelectric thin film 25 grows along the crystal surface of the substrate 21.
또한, 상기 하부전극(23)은 초전박막(25)이 성장된 상기 기판(21)의 저면에서 에칭을 시작하여 개구부(35)를 형성시 초전박막(25)이 손상되는 것을 방지하는 역할을 한다. 즉, 기판(21)을 에칭하여 개구부(35)를 형성시 상기 기판(21)이 개통되는 순간 상기 하부전극(23)의 저면이 드러나게 된다. 이때 에칭을 멈춘다. 이와 같이 개구부(35)의 관통여부를 확인함으로써 에칭액에 의해 상기 초전박막(25)이 손상되는 것을 방지할 수 있다.In addition, the lower electrode 23 serves to prevent damage to the superelectric thin film 25 when the opening 35 is formed by starting etching from the bottom surface of the substrate 21 on which the super thin film 25 is grown. . That is, when the substrate 21 is etched to form the opening 35, the bottom surface of the lower electrode 23 is exposed at the moment when the substrate 21 is opened. At this time, the etching is stopped. By checking whether the opening 35 is penetrated in this way, it is possible to prevent the super thin film 25 from being damaged by the etching solution.
상기 초전박막(25)은 상기 유기박막(29)에 의해 상기 기판(21)의 개구부(35) 상에 고정된다. 이 초전박막(25)은 상기 개구부(35)를 통해 입사되는 빛을 검출하여 전기신호로 바꾸어준다. 이 초전박막(25)은 초전계수의 온도변화가 작은 PLT(PbLaTiO3)로 이루어져 있으며, 상기 개구부(35)가 형성되지 않은 상태에서 통상 스퍼터링에 의해 상기 기판(21)과, 하부전극(23) 위에 증착 형성된다. 이 초전박막(25)은 그 일부가 상기 기판(21) 위에 직접 형성되므로 상기 기판(21)의결정면을 따라 성장된다.The super thin film 25 is fixed on the opening 35 of the substrate 21 by the organic thin film 29. The super thin film 25 detects light incident through the opening 35 and converts the light into an electrical signal. The pyroelectric thin film 25 is made of PLT (PbLaTiO3) having a small change in temperature of the pyroelectric coefficient, and is usually formed on the substrate 21 and the lower electrode 23 by sputtering in a state where the opening 35 is not formed. Deposition is formed. The super thin film 25 is grown along the crystal plane of the substrate 21 because part thereof is directly formed on the substrate 21.
상기 상부전극(27)은 상기 초전박막(25)위에 위치한다. 이 상부전극(27)은 상기 하부전극(23)과 함께 상기 초전박막(25)에서 변환된 전기신호를 외부장치의 회로부(미도시)에 전달하는 기능을 한다.The upper electrode 27 is positioned on the super thin film 25. The upper electrode 27, together with the lower electrode 23, serves to transfer an electrical signal converted from the super thin film 25 to a circuit unit (not shown) of an external device.
상기 유기박막(29)은 상기 초전박막(25)과 상부전극(27)을 감싸며 상기 기판(21)상에 형성된다. 이 유기박막(29)은 상기 초전박막(25)과 상부전극(27)이 상기 개구부(35)의 형성 후에도 기판(21)에 고정되도록 지지한다. 이 유기박막(29)은 상기 상부전극(27)의 상부 일부가 노출되도록 개구된 콘택홀(31)을 가진다. 상기 인출전극(33)은 상기 유기박막(29) 상부에 형성되며 상기 콘택홀(31)을 통하여 상기 상부전극(27)에 접속된다.The organic thin film 29 is formed on the substrate 21 surrounding the super thin film 25 and the upper electrode 27. The organic thin film 29 supports the superelectric thin film 25 and the upper electrode 27 to be fixed to the substrate 21 even after the opening 35 is formed. The organic thin film 29 has a contact hole 31 opened to expose a portion of the upper portion of the upper electrode 27. The lead electrode 33 is formed on the organic thin film 29 and is connected to the upper electrode 27 through the contact hole 31.
이와 같이 구비된 초전형 적외선센서는 상기 하부전극(23)을 기판(21)에 형성하고, 그 중앙부(24)를 개구함으로써, 개구부(35) 형성에 따른 기판(21)에 접촉 성막된 초전박막(25)의 손상을 방지할 수 있다.In the pyroelectric infrared sensor provided as described above, the lower electrode 23 is formed on the substrate 21 and the center portion 24 is opened, thereby forming the superelectric thin film in contact with the substrate 21 according to the opening 35. Damage to (25) can be prevented.
따라서, 초전박막(25)이 기판(21)의 단결정면을 따라 성장함으로 분극 처리 없이도 양호한 압전효과를 얻을 수 있다.Therefore, the superelectric thin film 25 grows along the single crystal surface of the substrate 21, so that a good piezoelectric effect can be obtained without polarization treatment.
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|---|---|---|---|---|
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| KR970047959A (en) * | 1995-12-29 | 1997-07-26 | 김광호 | Pyroelectric infrared sensor and its manufacturing method |
| KR970057844A (en) * | 1995-12-29 | 1997-07-31 | 김광호 | Surveillance Camera with Temperature Display |
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2001
- 2001-05-08 KR KR1020010025643A patent/KR20020085730A/en not_active Application Discontinuation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04350978A (en) * | 1991-05-29 | 1992-12-04 | Matsushita Electric Ind Co Ltd | Pyroelectric infrared array sensor |
| KR940015468A (en) * | 1992-12-24 | 1994-07-21 | 이헌조 | Human body detection sensor and manufacturing method |
| KR970047959A (en) * | 1995-12-29 | 1997-07-26 | 김광호 | Pyroelectric infrared sensor and its manufacturing method |
| KR970057844A (en) * | 1995-12-29 | 1997-07-31 | 김광호 | Surveillance Camera with Temperature Display |
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