KR20020082555A - Apparatus for etching in a semiconductor fabricating - Google Patents

Abstract

PURPOSE: An etching apparatus for manufacturing semiconductor devices is provided to prevent a breakage of a first window and to stably install a detection window without leakage points. CONSTITUTION: The etching apparatus comprises a processing chamber(100) for forming a desired pattern by etching a film formed on a substrate, and a detection window(140) for detecting an end point of the etching film. The detection window(140) further includes the first window(140a) made of a quartz, the second window(140b) located by surrounding the peripheral portion of the first window, and an O-ring(140c) injected at the peripheral portion of the second window. The injected portion of the O-ring(140c) is faced with the first window(140a).

Description

Etching apparatus used for semiconductor manufacturing {Apparatus for etching in a semiconductor fabricating}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching apparatus used in semiconductor manufacturing, and more particularly, to an etching apparatus used in semiconductor manufacturing having an end point detector window for monitoring a film to be etched when performing etching. .

In recent years, with the rapid spread of information media such as computers, semiconductor devices are also rapidly developing. In terms of its function, the semiconductor device is required to operate at a high speed and to have a large storage capacity. In response to these demands, the manufacturing technology of the semiconductor device has been developed to improve the degree of integration, reliability, and response speed. Accordingly, the demand for microfabrication techniques such as a film formation technique or an etching technique has become strict as a main technique for improving the integration degree of the semiconductor device.

Among the microfabrication techniques, the etching technique is a technique for removing the predetermined portions of the films formed on the substrate and processing the films in a desired pattern, which requires a design rule of 0.15 μm or less. In manufacturing, an etching apparatus using plasma is mainly used.

Etching apparatuses using the plasma are also being developed as etching apparatuses that improve the efficiency of the plasma. The etching apparatus may be reactive ion etch (RIE) or inductively coupled plasma (ICP) according to the method of forming the plasma. ), Electron cycoltron resonance (ECR), and tranceformer coupled plasma (TCP).

Looking at the etching apparatus, there is a somewhat different depending on the manner of forming the plasma, but includes a processing chamber, installed in the processing chamber, and includes a chuck on which the substrate is placed. And, one side of the processing chamber is provided with a monitoring window for monitoring the film to be etched when performing the etching.

An example of an etching apparatus in which the monitoring window is installed is disclosed in US Pat. No. 5,904,780 issued to Tomoyasu.

The monitoring window includes a first window mainly made of quartz (called 'quartz window') and a second window (called 'universal window') installed to surround the peripheral portion of the first window. In addition, the first window and the second window is installed on one side of the processing chamber in a state coupled by screw fastening.

However, when the screw fastening is strengthened, the first window is easily broken. This is because the first window is made of a quartz material that is easily damaged by the impact. When the screw is weakened to alleviate the damage, the monitoring window acts as a leakage point of the processing chamber due to the combined state of the first window and the second window.

Accordingly, a paper pad is inserted between the first window and the second window in order to solve a problem such as a breakage point or a leakage point caused by screwing the first window and the second window. That is, it is installed on one side of the processing chamber by screwing in a state in which the first window, the paper pad, and the second window are coupled in the order.

As described above, the conventional etching apparatus has a problem in that the operating efficiency of the apparatus is lowered and the reliability of the etching process is lowered because it acts as a mechanical breakdown or a leakage point of the processing chamber due to the structural problem of the monitoring window as described above. have. In addition, although a paper pad is used to solve this problem, the paper pad or the damage to the device is weak because it does not fundamentally solve the problem.

SUMMARY OF THE INVENTION An object of the present invention is to provide an etching apparatus for use in semiconductor manufacturing for safely installing components of a monitoring window provided at one side of a processing chamber without breakage and leakage points.

FIG. 1 is a schematic diagram illustrating an etching apparatus used for manufacturing a semiconductor according to an embodiment of the present invention.

FIG. 2 is a schematic diagram illustrating a configuration of a monitoring window installed in FIG. 1.

FIG. 3 is a schematic diagram illustrating a second window into which the O-ring of FIG. 2 is inserted.

Explanation of symbols on the main parts of the drawings

10: etching apparatus 100: processing chamber

120: Chuck 140: monitoring window

140a, 140b: Windows 140c: O-ring

150: coil W: substrate

Etching apparatus used in the semiconductor manufacturing of the present invention for achieving the above object, a processing chamber for forming a pattern set by etching the films formed on the substrate, and installed on one side of the processing chamber, the etching of the films And a monitoring window for monitoring the etched films, wherein the monitoring window includes a first window having a quartz material and a second window installed to surround a peripheral portion of the first window. An o-ring is inserted into a peripheral portion of the window, and a portion into which the o-ring is inserted is interviewed with the first window.

The first window and the second window are installed by screwing.

As such, even when the first window and the second window are coupled and installed by the screw coupling, the first and second windows may be supported by the O-ring, thereby minimizing damage to the first window due to the screw coupling. In addition, the o-ring does not act as a leakage point of the processing chamber because the o-ring completely closes the first window and the second window.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

FIG. 1 shows an etching apparatus 10 which forms a desired pattern by etching certain portions of films formed on the substrate W, and particularly, an etching apparatus of a TCP method. The etching apparatus of the TPC method has anisotropic etching conditions for etching patterns only in one direction, and is mainly used for fine pattern etching, contact formation, spacer formation, and the like.

Referring to FIG. 1, the etching apparatus 10 includes a processing chamber 100 that receives an etching gas and forms a plasma, and uses the plasma to etch films formed on the substrate W. Referring to FIG.

In addition, the etching apparatus 10 is installed in the processing chamber 100 and includes a chuck 120 on which the substrate W is placed. Thus, when performing the etching, the substrate W is placed on the chuck 120.

The etching apparatus 10 includes a coil 150 installed above the processing chamber 100. Accordingly, by applying power to the coil 100 when performing the etching, the etching gas provided to the processing chamber 100 may be formed in a plasma state. In this case, a bias power is applied to the chuck 120, thereby providing directionality to the plasma to increase the efficiency of the etching.

As described above, the etching apparatus 10 of the TPC method generates a magnetic field by the power applied to the coil 150 and generates an electric field in which the magnetic field rotates so that the electrons accelerated by the electric field dissociate the etching gas. To form a plasma, and not to apply power to a plate-shaped electrode, but to apply a power to the coil 150 to generate a plasma, and to apply a bias power to the chuck 120 on which the substrate W is placed. It has a configuration in which etching is performed by accelerating plasma ions. In this case, the power applied to the coil 150 and the chuck 120 is a radio frequency of 13.56 MHz, and plasma ions are formed at a density of about 0.5 to 2 × 10 ¹² cm ³ .

The etching apparatus 10 includes a monitoring window 140 installed at one side of the processing chamber 100. The monitoring window 140 is configured to monitor a film on which the etching is performed when the etching is performed. In detail, the monitoring window 140 has a function of detecting an etching end point of the film on which the etching is performed.

2 illustrates a configuration of a monitoring window 140 installed at one side of the processing chamber 100 of the etching apparatus 10.

2, the monitoring window 140 includes a first window 140a and a second window 140b. The first window 140a is made of quartz, and the second window 140b is installed to surround the peripheral portion of the first window. That is, the first window 140a and the second window 140b are combined in the order, and installed on one side of the processing chamber 100. At this time, the installation is by screwing. The O-ring 140c is inserted between the first window 140a and the second window 140b.

3 shows a second window 140b into which the o-ring 140c is inserted.

Referring to FIG. 3, a groove (not shown) is formed in the second window 140b, and the O-ring 140c is inserted into the groove. Here, the o-ring 140c has an interference fit shape in the groove. Therefore, the portion in which the o-ring 140c of the second window 140b is inserted has an arrangement in which the first window 140a is interviewed.

As such, the O-ring 140c is coupled to the portion where the first window 140a and the second window 140b are interviewed, and thus, a screw fastening for installing the first window 140a and the second window 140b. Can be easily performed. That is, even when the first window 140a is made of a quartz material that is easily damaged, the o-ring 140c is included in the portion to be in close contact, thereby alleviating the tightening force by screwing. Accordingly, when installing the monitoring window 140, it is possible to strengthen the screw fastening. Therefore, the occurrence of leakage points can be minimized by strengthening the screw fastening.

Looking at the etching of the metal film using the etching apparatus 10 having the above configuration as follows. First, the substrate W on which the metal film is formed is placed on the chuck 120. Here, a photoresist pattern is used as an etching mask for etching the metal film, and the photoresist pattern is formed on the metal film. The processing chamber 100 is formed in a process atmosphere for etching the metal film. Accordingly, an etching gas including Cl _x is provided in the processing chamber 100, power is applied to the coil 150 with a radio frequency of 13.56 MHz, and the chuck 120 has a radio frequency of 13.56 MHz. Apply bias power. In addition, the processing chamber 100 is configured to have a pressure of 1 to 10 mTorr. Accordingly, the etching gas is dissociated to form a plasma state, and the plasma ions in the plasma state react with the metal film to etch the metal film. In this case, the etching end point of the metal film on which the etching is performed is detected through the monitoring window 140, and the etching is terminated based on the detection result.

Here, the monitoring window 140 for detecting the etching end point does not act as a leakage point because it is installed by a strong screw fastening. This is because the o-ring 140c is included as a member constituting the monitoring window 140. That is, since the O-ring 140c is included in the area where the first window 140a and the second window 140b are interviewed, the O-ring 140c is screwed even if the screw is fastened for the installation. This is because the tightening force due to the tightening is alleviated. In addition, this is because the o-ring 140c itself has a function of sealing a portion of the monitoring window 140.

Therefore, according to the present invention, the occurrence of breakage or leakage points due to structural defects of the monitoring window can be solved by installing an o-ring. Therefore, the operation efficiency of an apparatus can be raised and the effect of improving the reliability of an etching process can be anticipated. As a result, productivity and reliability of the semiconductor device are improved.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the present invention without departing from the spirit and scope of the invention described in the claims below. I can understand that you can.

Claims (2)

A processing chamber for etching the films formed on the substrate to form a set pattern; And A monitoring window installed at one side of the processing chamber and configured to monitor the etched films when the films are etched, wherein the monitoring window surrounds a first window made of quartz and a peripheral portion of the first window; A semiconductor comprising a second window provided, wherein an O-ring is inserted into a peripheral portion of the second window, and the portion into which the O-ring is inserted is interviewed with the first window. Etching apparatus used for manufacturing. The etching apparatus of claim 1, wherein the first window and the second window are installed by screwing.