KR20020073637A - Method for chemical vapor deposition of semiconductor device - Google Patents

Method for chemical vapor deposition of semiconductor device Download PDF

Info

Publication number
KR20020073637A
KR20020073637A KR1020010013352A KR20010013352A KR20020073637A KR 20020073637 A KR20020073637 A KR 20020073637A KR 1020010013352 A KR1020010013352 A KR 1020010013352A KR 20010013352 A KR20010013352 A KR 20010013352A KR 20020073637 A KR20020073637 A KR 20020073637A
Authority
KR
South Korea
Prior art keywords
vapor deposition
chemical vapor
uniformity
nozzle
chamber
Prior art date
Application number
KR1020010013352A
Other languages
Korean (ko)
Inventor
김명진
김진웅
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020010013352A priority Critical patent/KR20020073637A/en
Publication of KR20020073637A publication Critical patent/KR20020073637A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE: A CVD(Chemical Vapor Deposition) method of semiconductor devices is provided to stably improve a uniformity and to easily control a uniformity during set-up of processing. CONSTITUTION: The CVD method is formed a film on a wafer loaded on a chuck(2) of a chamber(1) by injecting chemical deposition gas into the wafer using a nozzle(3). At this time, the direction of the nozzle(3) is not fixed, and controlled by hand-operated. Thereby, the uniformity of the deposited film is easily stabilized.

Description

반도체소자의 화학기상 증착방법{METHOD FOR CHEMICAL VAPOR DEPOSITION OF SEMICONDUCTOR DEVICE}Chemical vapor deposition method of semiconductor device {METHOD FOR CHEMICAL VAPOR DEPOSITION OF SEMICONDUCTOR DEVICE}

본 발명은 반도체소자에 대한 것으로, 특히 막의 유니포미티를 안정적으로 개선시키기에 용이한 반도체소자의 화학기상 증착방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a method for chemical vapor deposition of a semiconductor device which is easy to stably improve the uniformity of a film.

화학 기상 증착(Chemical Vapor Deposition)법은 원료를 가스로 공급해서 기상 또는 기판 표면에서의 화학 반응에 의해서 박막을 퇴적하는 방법이다.The chemical vapor deposition method is a method of depositing a thin film by supplying a raw material with a gas and by chemical reaction on the gas phase or the substrate surface.

이 방법은 진공 증착법이나 스퍼터링법 등 다른 박막 퇴적 방법에 비해서 광범위하고 또한 다양한 박막 형성이 가능하고, 또한 LSI 제조 공정 상 갖가지 유용한 박막 퇴적 형태를 제공한다.This method enables a wider variety of thin film formation than other thin film deposition methods such as vacuum deposition or sputtering, and also provides various useful thin film deposition forms in the LSI manufacturing process.

이하, 첨부 도면을 참조하여 종래 반도체소자의 화학기상 증착방법에 대하여설명하면 다음과 같다.Hereinafter, a chemical vapor deposition method of a conventional semiconductor device will be described with reference to the accompanying drawings.

도 1은 종래 화학기상 증착을 위한 챔버 및 노즐을 나타낸 구조도이다.1 is a structural diagram showing a chamber and a nozzle for conventional chemical vapor deposition.

CVD장비는 도 1에 도시한 바와 같이 돔(Dome)형으로 생긴 챔버(1)가 있고, 챔버(1) 하부에 실리콘 웨이퍼를 로딩하기 위한 척(Chuck)(2)이 있고, 가스를 챔버(1)내에 분사시키기 위해서 챔버(1) 내부에 고정된 노즐(nozzle)(3)이 있다.As shown in FIG. 1, the CVD apparatus includes a chamber 1 formed in a dome shape, a chuck 2 for loading a silicon wafer under the chamber 1, and a gas chamber. There is a nozzle (3) fixed inside the chamber (1) for injection in the chamber (1).

상기와 같은 CVD장비에서는 고정된 노즐을 통하여 가스를 챔버(1)내로 분사시켜서 척(2)상의 웨이퍼에 화학기상 증착막을 형성한다.In the above CVD apparatus, a gas is injected into the chamber 1 through a fixed nozzle to form a chemical vapor deposition film on the wafer on the chuck 2.

이때 장비 불안정으로 갑작스럽게 막의 유니포미티(uniformity)가 틀어질 경우 혹은 ??업(set-up)시 종래에는 한쪽 방향으로 고정된 노즐을 통해 들어가는 가스량을 조정하므로써 막(film)의 유니포미티(uniformity)를 조절하였다.In this case, the film uniformity is suddenly changed due to equipment instability, or when set-up, the film uniformity is adjusted by adjusting the amount of gas entering through a fixed nozzle in one direction. uniformity was adjusted.

상기와 같은 종래 반도체소자의 화학기상 증착방법은 다음과 같은 문제가 있다.The chemical vapor deposition method of the conventional semiconductor device as described above has the following problems.

한번 틀어진 막의 유니포미티(uniformity)를 잡기 위해서 가스량을 조정하였는데, 이것으로는 유니포미티(uniformity)를 개선하는데 한계가 있다.Once the amount of gas was adjusted to capture the uniformity of the distorted membrane, there is a limit to improving the uniformity.

본 발명은 상기와 같은 문제를 해결하기 위하여 안출한 것으로 특히, 유니포미티(uniformity)가 틀어진 챔버를 안정화시키거나 공정 ??업(set-up)시 유니포미티(uniformity)를 쉽게 조절하기에 알맞은 반도체소자의 화학기상 증착방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the above problems, in particular, to stabilize the chamber in which the uniformity (uniformity) or to adjust the uniformity (uniformity) during the process (set-up) easily (uniformity) It is an object of the present invention to provide a chemical vapor deposition method of a suitable semiconductor device.

도 1은 종래의 화학기상 증착을 위한 챔버 및 노즐을 나타낸 구조도1 is a structural diagram showing a chamber and a nozzle for a conventional chemical vapor deposition

도면의 주요 부분에 대한 부호의 설명Explanation of symbols for the main parts of the drawings

1 : 챔버 2 : 척(Chuck)1: Chamber 2: Chuck

3 : 노즐3: nozzle

상기와 같은 목적을 달성하기 위한 본 발명 반도체소자의 화학기상 증착방법은 척상에 웨이퍼를 구비한 챔버에 있어서, 노즐의 방향을 유동적으로 조절하여서 상기 챔버내에 화학가스를 주입하는 공정을 포함함을 특징으로 한다.Chemical vapor deposition method of a semiconductor device of the present invention for achieving the above object comprises the step of injecting a chemical gas into the chamber by fluidly adjusting the direction of the nozzle in the chamber having a wafer on the chuck. It is done.

이하, 본 발명 반도체소자의 화학기상 증착방법에 대하여 설명하면 다음과 같다.Hereinafter, the chemical vapor deposition method of the semiconductor device of the present invention will be described.

본 발명 반도체소자의 화학기상 증착방법은 노즐의 방향을 유동적으로 조정하면서 노즐에 화학 증착 가스를 주입해서 챔버(chamber)내의 척(Chuck)에 로딩되어 있는 웨이퍼(wafer)상에 막(film)을 형성시킨다.In the chemical vapor deposition method of the semiconductor device of the present invention, a chemical vapor deposition gas is injected into a nozzle while fluidly adjusting a direction of a nozzle to deposit a film on a wafer loaded on a chuck in a chamber. To form.

이때 가스를 챔버내에 분사(주입)시킬 때 노즐은 고정되어 있는 것이 아니고 그 방향을 유동적으로 조정하여서 진행하는 것인데, 이와 같이 화학기상 증착법으로 막을 증착하면 막의 유니포미티(uniformity)가 갑작스럽게 틀어질 경우에도 상기와 같이 노즐의 방향을 상하로 유동적으로 조정하여 진행해주므로써 막의 유니포미티(uniformity)를 안정화시킬 수 있다.At this time, when the gas is injected (injected) into the chamber, the nozzle is not fixed but proceeds by adjusting the direction fluidly. When the film is deposited by chemical vapor deposition, the uniformity of the film may be suddenly turned. In this case, as described above, the direction of the nozzle may be adjusted by moving up and down to stabilize the uniformity of the membrane.

이때 노즐의 방향은 사용자가 수동으로 상하 조절한다.At this time, the direction of the nozzle is manually adjusted up and down by the user.

상기와 같은 본 발명 반도체소자의 화학기상 증착방법은 다음과 같은 효과가 있다.The chemical vapor deposition method of the semiconductor device of the present invention as described above has the following effects.

노즐의 방향을 유동적으로 만들어서 즉, 노즐의 방향을 사용자가 수동으로 조정하여 가스를 챔버내에 분사시켜서 화학기상 증착막을 형성하므로 별도의 구성을 추가함없이 막의 유니포미티(uniformity)를 안정화시키기에 용이하다.It is easy to stabilize the uniformity of the film without adding a separate structure because the direction of the nozzle is made fluid, that is, the user manually adjusts the nozzle direction to inject the gas into the chamber to form a chemical vapor deposition film. Do.

Claims (2)

척상에 웨이퍼를 구비한 챔버에 있어서,A chamber having a wafer on a chuck, 노즐의 방향을 유동적으로 조절하여서 상기 챔버내에 화학가스를 주입하는 공정을 포함함을 특징으로 하는 반도체소자의 화학기상 증착방법.And chemically injecting the chemical gas into the chamber by fluidly adjusting the direction of the nozzle. 제 1 항에 있어서, 상기 노즐의 방향은 사용자가 수동으로 상하로 움직여서 조절함을 특징으로 하는 반도체소자의 화학기상 증착방법.The method of claim 1, wherein the direction of the nozzle is adjusted by a user manually moving up and down.
KR1020010013352A 2001-03-15 2001-03-15 Method for chemical vapor deposition of semiconductor device KR20020073637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020010013352A KR20020073637A (en) 2001-03-15 2001-03-15 Method for chemical vapor deposition of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020010013352A KR20020073637A (en) 2001-03-15 2001-03-15 Method for chemical vapor deposition of semiconductor device

Publications (1)

Publication Number Publication Date
KR20020073637A true KR20020073637A (en) 2002-09-28

Family

ID=27697464

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010013352A KR20020073637A (en) 2001-03-15 2001-03-15 Method for chemical vapor deposition of semiconductor device

Country Status (1)

Country Link
KR (1) KR20020073637A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103871853A (en) * 2014-03-24 2014-06-18 上海华力微电子有限公司 Device and method for improving uniformity of thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103871853A (en) * 2014-03-24 2014-06-18 上海华力微电子有限公司 Device and method for improving uniformity of thin film

Similar Documents

Publication Publication Date Title
KR102470304B1 (en) Selective deposition of silicon oxide
KR101379089B1 (en) Metal hard mask fabrication
US10199212B2 (en) Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide
KR100441297B1 (en) Remote plasma-Assisted CCP type PECVD apparatus
JP3265042B2 (en) Film formation method
US20090242511A1 (en) Seasoning method for film-forming apparatus
WO2010045595A2 (en) Method for improving process control and film conformality of pecvd films
KR102591651B1 (en) Asymmetric wafer bow compensation
Goodyear et al. Atomic layer etching in close-to-conventional plasma etch tools
CN110468388B (en) Method for forming nitride film by atomic layer deposition method
US8426288B2 (en) Method for improving capacitance uniformity in a MIM device
KR20020073637A (en) Method for chemical vapor deposition of semiconductor device
JP2022039993A (en) Substrate treatment method, and substrate treatment apparatus and semiconductor device manufacturing method using the same
US20210320004A1 (en) Nitride films with improved etch selectivity for 3d nand integration
KR20220098816A (en) Station-to-station control of backside bow compensation deposition
KR20070037503A (en) Method for the deposition of layers containing silicon and germanium
KR920002169B1 (en) Plasma discharge deposition process and a suitable apparatus therefor
KR20020051489A (en) Shower head of Chemical Vapor Deposition equipment for improving a thickness uniformity
KR20190092762A (en) Method of forming thin film using plasma enhanced chemical vapor deposition and apparatus therefor
KR20030027505A (en) Semiconductor processing apparatus having improved exhausting structure
US20200075325A1 (en) Film forming method
KR100668970B1 (en) Plasma treatment apparatus and method for fabricating nitride film using the same
KR0172857B1 (en) Thin film forming method by cvd
KR100496854B1 (en) Production method for semiconductor wafer
KR20230170428A (en) Method of processing substrate

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination