KR20020072476A - Gilding method using low temperature plazma for ceramic material - Google Patents
Gilding method using low temperature plazma for ceramic material Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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Abstract
Description
본 발명은 저온 플라즈마를 이용한 3차원 세라믹시료의 금색, 은색, 동색 도금방법에 관한 것으로, 더욱 상세하게는 세라믹을 이용하여 만든 모든 재료 표면에 순금색, 순은색, 순동색으로 저렴하고 무공해방식으로 도금할 수 있는 저온 플라즈마를 이용한 3차원 세라믹시료의 금색, 은색, 동색 도금방법에 관한 것이다.The present invention relates to a gold, silver, and copper plating method of a three-dimensional ceramic sample using a low-temperature plasma, more specifically, to the surface of all materials made of ceramic in pure gold, pure silver, pure copper color in an inexpensive and pollution-free manner. A gold, silver and copper color plating method of a three-dimensional ceramic sample using a low-temperature plasma that can be plated.
일반적으로 도금방식으로는 전기도금, 무전해도금, 진공도금 등 많은 방법등이 그 용도에 따라 사용되고 있다.In general, as the plating method, many methods such as electroplating, electroless plating, and vacuum plating are used according to their purpose.
전기도금은 전해용액중에서 물건을 음극으로 하여 표면에 도금 금속을 증착하게 하는 것으로, 장식, 방녹 기능과 비교적 염가이고, 적절한 금속 피막을 부여할 수 있기 때문에, 자동차와 음향, 항공기, 통신기, 컴퓨터부품, 장신구, 건축자재등 많은 용도의 부품을 도금하고 있다.Electroplating is the deposition of plated metal on the surface by using a cathode as an anode in an electrolytic solution. It is relatively inexpensive to decoration and anti-rusting functions and can provide an appropriate metal film. Plating parts for many purposes such as jewelry, jewelry and building materials.
무전해도금은 외부로부터 전기에너지를 공급받지 않고 금속염 수용액 중의 금속이온을 환원제의 힘에 의해 자기 촉매적으로 환원시켜 피처리물의 표면 위에 금속을 석출시키는 방법이다. 이를 화학도금 또는 자기촉매도금이라고도 한다. 수용액 내의 포름알데히드나 하이드리진 같은 환원제가 금속이온이 금속분자로 환원되도록 전자를 공급하는데, 이 반응은 촉매표면에서 일어난다. 가장 상용화된 도금제는 구리, 니켈-인 ·니켈-보론 합금이 있다. 전기도금에 비해서 도금층이 치밀하고 대략 25 μm 정도의 균일한 두께를 가지며, 도체뿐만 아니라 플라스틱이나 유기체 같은 다양한 기판에 대해서 적용할 수 있는 장점이 있다. 이 방법은 금속부터 비금속까지 넓게 도금이 가능하고, 도금 후 정밀도도 극히 높기 때문에, 주요하게 기능을 중시하는 공업적 용도에 널리 쓰이고 있다. 또한 전기가 통하지 않는 독립된 패턴의 회로 및 전기금도금이 불가능한 부품에 적용되며 납땜성 향상 및 Wire Bonding성 향상으로 인해 전자통신부품, Ceramic소재, 특수소재, EMI용 반도체 부품의 표면처리에 널리 적용된다.Electroless plating is a method in which metal ions in an aqueous metal salt solution are autocatalytically reduced by the force of a reducing agent without receiving electrical energy from the outside, thereby depositing metal on the surface of the workpiece. This is also called chemical plating or self-catalyst plating. Reducing agents such as formaldehyde and hydrazine in aqueous solutions supply electrons to reduce metal ions to metal molecules. This reaction takes place on the surface of the catalyst. The most commonly used plating agents are copper, nickel-phosphorus-nickel-boron alloys. Compared to electroplating, the plating layer is dense and has a uniform thickness of about 25 μm, and there is an advantage that it can be applied to various substrates such as plastics or organics as well as conductors. This method is widely used in industrial applications that mainly focus on functions because it can be plated widely from metal to non-metal and has extremely high precision after plating. In addition, it is applied to circuits of independent patterns that are not conducting electricity and parts that are not electroplated, and is widely applied to the surface treatment of electronic communication parts, ceramic materials, special materials, and EMI semiconductor parts due to improved solderability and wire bonding properties.
진공도금은 용기 내를 진공으로 하여, 금속과 산화물등을 가스화 혹은 이온화해 물건표면에 증착시키는 것으로, 진공증착과 스퍼터링, ion플레이팅, ion질환, ion주입등 여러 가지 방법이 있고 장식기증의 분야에서 활용되고 있다. 특히 반도체 제조에 불가결의 기술이다.In vacuum plating, the inside of the container is vacuumed, and metals and oxides are gasified or ionized and deposited on the surface of the object. There are various methods such as vacuum deposition, sputtering, ion plating, ion disease and ion injection. It is used in. In particular, it is an indispensable technique for semiconductor manufacturing.
저온 플라즈마가 개발시 최초의 응용분야는 금속의 표면강화이었다. 표면강화는 철강재료에 대한 침탄과 질화처리, 고주파 담금질이 대표적이며, 최근에는 황화처리를 시작하고, Al, Cr, Ti, W등의 금속과 그 탄화물을 소재표면에서 확산 침투시키는 수법이 개발되고 있다. 처리법도 가스, 염욕, 진공, ion등이 있다. 특별히 단순 형상의 플라스틱 성형품등에서는 메탈릭화가 용이하게 행할 수 있다. 화상을 인쇄한 박에 의해, 임의의 색의 stamping이 가능하다.The first field of application for the development of low temperature plasma was surface hardening of metals. Surface hardening is typical of carburizing, nitriding, and high frequency quenching of steel materials. Recently, sulfidation is started, and a method of diffusing and infiltrating metals such as Al, Cr, Ti, and W and their carbides on the surface of the material is developed. have. Treatment methods also include gas, salt bath, vacuum, and ion. Especially in the plastic molded article etc. of a simple shape, metallization can be performed easily. By foil which printed an image, stamping of arbitrary color is possible.
그러나, 타일과 같은 세라믹 재질은 도체가 아니므로, 전기적인 방법 등을 통해 도금할 수 있는 방식은 아직 없으며, 시료에 금색, 은색, 동색으로 도금하려면 오염물질인 폐기물이 발생되어 그 처리가 어렵고 그 색깔도 순전히 표현되어 지지도 않는 문제점이 있다.However, since ceramic materials such as tiles are not conductors, there is no way to plate them by an electric method or the like. To plate gold, silver, or copper color on a sample, waste, which is a contaminant, is difficult to process. There is a problem that color is not expressed purely.
본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로써 구체적으로, 오염물질이 발생되지 않으면서 타일과 같은 세라믹 재질에 순금색, 순은색, 순동색의 도금을 가능하게 하는 저온 플라즈마를 이용한 3차원 세라믹시료의 금색, 은색, 동색 도금방법을 제공하는데 그 목적이 있다.The present invention is to solve the problems of the prior art as described above, specifically, using a low-temperature plasma to enable the plating of pure gold, pure silver, pure copper on a ceramic material such as tiles without generating pollutants It is an object of the present invention to provide a gold, silver, and copper plating method of a three-dimensional ceramic sample.
도1 은 본 발명에 따른 PA CVD를 보여주는 개략도,1 is a schematic view showing a PA CVD according to the present invention;
도2 는 본 발명에 따른 저온 플라즈마를 이용한 도금단계를 보여주는 블록도.Figure 2 is a block diagram showing a plating step using a low temperature plasma according to the present invention.
*도면의 주요부분에 대한 부호설명** Description of Signs of Main Parts of Drawings *
1: PA CVD(PLASMA ASSISTED CHEMICAL VAPOUR DEPOSITION)1: PA CVD (PLASMA ASSISTED CHEMICAL VAPOUR DEPOSITION)
2: 진공펌프2: vacuum pump
3: 진공 챔버3: vacuum chamber
4: 전원장치4: power supply
본 발명의 목적은 PA CDV 장치의 진공 챔버내에 도금 시료를 넣고, 진공 펌프로 일정한 진공을 형성하는 단계; 상기 챔버내에 TiCl4와 N2또는 TiCl4와 C 개스를 일정온도에서 소정의 비율로 주입하는 단계, 상기 챔버내에 DC 400V - 1,000V의 펄스 전압을 가하여 플라즈마를 형성하는 단계; 및, 상기 챔버내의 시료에 이온 증착 되는 단계로 구성된 저온 플라즈마를 이용한 3차원 세라믹시료 금색, 은색, 동색 도금방법을 제공한다.An object of the present invention is to place a plating sample in a vacuum chamber of a PA CDV apparatus, and to form a constant vacuum with a vacuum pump; Injecting TiCl 4 and N 2 or TiCl 4 and C gas in a predetermined ratio at a predetermined temperature into the chamber, and applying a pulse voltage of DC 400V-1,000V into the chamber to form a plasma; And it provides a three-dimensional ceramic sample gold, silver, copper color plating method using a low-temperature plasma consisting of the step of ion deposition on the sample in the chamber.
본 발명에 의하면, 상기 TiCl4와 N2개스 주입단계에서 상기 시료도금과 상기 주입 개스 비율이 1 ㎡ /1.5㎖,로 유지하게 한다.According to the present invention, in the TiCl 4 and N 2 gas injection step, the sample plating and the injection gas ratio are maintained at 1 m 2 /1.5 ml.
그리고, 상기 TiCl4와 N2개스 주입단계에서 상기 주입 개스량과 온도에 따라 도금시료에 순금색 및 순동색으로 도금 색이 조절되고, TiCl4와 C2를 주입하면 순은색으로 도금된다.In addition, in the TiCl 4 and N 2 gas injection step, the plating color is adjusted to pure gold color and pure copper color according to the injection gas amount and temperature, and when the TiCl 4 and C 2 are injected, the plating color is pure silver.
또한, 상기 이온증착 단계는 상기 챔버내의 TiCl4가 Ti 와 Cl4로 이온 분리되면서 Ti는 상기 N2개스와 화학결합되면서 상기 도금시료에 이온 증착된다.In the ion deposition step, TiCl 4 in the chamber is ion-separated into Ti and Cl 4 and Ti is ion-deposited onto the plating sample while chemically bonding to the N 2 gas.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세하게 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.
도시된 바와 같이, 저온 플라즈마를 이용한 세라믹시료 금색, 은색, 동색 도금방법은 PA CVD(PLASMA ASSISTED CHEMICAL VAPOUR DEPOSITION ;1)를 이용한다.As shown, the ceramic sample gold, silver, and copper plating method using a low temperature plasma uses PA CVD (PLASMA ASSISTED CHEMICAL VAPOUR DEPOSITION; 1).
PA CVD(1)는 진공을 형성하는 진공펌프(2), 시료와 개스가 투입되는 진공챔버(Chamber;3) 및 진공챔버(3)에 펄스 전압을 인가하는 전원장치(4)로 구성된다.The PA CVD 1 comprises a vacuum pump 2 for forming a vacuum, a vacuum chamber 3 into which a sample and a gas are introduced, and a power supply 4 for applying a pulse voltage to the vacuum chamber 3.
이 PA CVD 장치(1)의 진공 챔버(Chamber;3)내에 타일이나 도자기와 같은 3차원 세라믹 시료를 넣고, 진공 펌프(2)로 1-10 pa (1 ∼ 10-1torr )의 진공을 형성한다(s1).A three-dimensional ceramic sample such as a tile or ceramics is placed in a vacuum chamber 3 of the PA CVD apparatus 1, and a vacuum pump 2 forms a vacuum of 1-10 pa (1-10 -1 torr). (S1)
그리고, 시료 체적비율이 1 ㎡ /1.5㎖ 가 되도록 TiCl4와 N2개스를 상온온도에서 진공 챔버(3)에 주입한다(s2). 이때 온도와 개스량에 따라서 시료에 도금색이 금에서부터 동색으로 변화하므로 주의 깊게 온도와 개스량을 조절한다.Then, TiCl 4 and N 2 gas are injected into the vacuum chamber 3 at room temperature so that the sample volume ratio is 1 m 2 /1.5 ml (s2). At this time, the plating color is changed from gold to the same color according to the temperature and the amount of gas. Carefully adjust the temperature and the amount of gas.
혹은 시료를 은색으로 도금하려면 TiCl4와 C2개스를 상온온도에서 진공 챔버(3)에 주입한다.Alternatively, to plate the sample in silver, TiCl 4 and C 2 gas are injected into the vacuum chamber 3 at room temperature.
개스와 온도가 정해지면, 전원장치(4)를 이용하여 진공챔버(3)내에 DC 400v - 1,000v의 펄스 전압을 가하여 플라즈마가 형성되도록 한다(s3).When the gas and the temperature are determined, the plasma is formed by applying a pulse voltage of DC 400v-1,000v to the vacuum chamber 3 using the power supply device 4 (s3).
이 플라즈마 형성공정을 통하여 TiCl4와 N2개스는T i +와Cl -로 이온분리가 되어 Ti 는 N과 결합이 되어 시료표면에 TiN을 형성하여 금색 혹은 동색으로 이온증착된다.(s4).Through this plasma formation process, TiCl 4 and N 2 gas are ion-separated into T i + and Cl − , and Ti is combined with N to form TiN on the sample surface to ion-deposit gold or copper color (s4).
TiCl4와 C2개스는Ti +와Cl -로 이온분리가 되어 Ti 는 C 와 결합이 되어 시료표면에 TiC을 형성하여 은색으로 이온증착된다.TiCl 4 and C 2 gas are ion-separated into Ti + and Cl - and Ti is combined with C to form TiC on the surface of the sample and ion-deposit in silver.
이러한 작용으로 재질에 따라서 2-5시간 정도의 도금공정을 통하여 3차원 세라믹시료 및 타일에 순금색, 순은색, 순동색의 도금을 얻을 수 있다.With this action, plating of 3D ceramic samples and tiles with pure gold, pure silver, and pure copper color can be obtained through the plating process of about 2-5 hours depending on the material.
이상에서 살펴본 바와 같이, 본 발명에 의한 저온 플라즈마를 이용한 3차원 세라믹시료의 금색, 은색, 동색 도금방법은 대상 시료의 표면에 흡착된 TiN이 Ti와 N의 비율에 따라 노란색으로부터 순 황금색이 되며 TiC는 순 은색이 되어, 순 황금색, 순 은색 그리고 순 동색과 동일하게 도금이 가능하고 또한 굴곡이 심하게 되어있는 모든 세라믹 시료까지 굴곡이 없는 시료와 똑같이 도금할 수 있는 장점이 있다.As described above, the gold, silver, and copper plating methods of the three-dimensional ceramic sample using the low-temperature plasma according to the present invention are TiN adsorbed on the surface of the target sample from yellow to pure golden color according to the ratio of Ti and N. Becomes pure silver, and can be plated in the same manner as pure golden, pure silver and pure copper, and has the advantage of plating the same as the non-curved sample up to all the ceramic samples which are severely bent.
그리고, 이 도금방식은 폐기물이 발생하지 않는 환경 친화적인 무공해 도금방법이며 저가, 저인력 비용으로 손쉽게 도금이 가능하다.In addition, this plating method is an environmentally friendly, pollution-free plating method that does not generate waste, and can be easily plated at low cost and low labor cost.
더욱이, 건축 타일에 적용시 수입대체는 물론 순금색을 선호하는 동양권에 고가로 수출도 용이하며, 도자기 등에 다양하게 적용하여 수출할 수 있어 수출 경쟁력 기여에 큰 효과가 있다.Moreover, when applied to architectural tiles, it is easy to export to Asian countries that prefer not only import substitution but also pure gold color.
본 발명은 특허청구범위에서 청구하는 청구의 요지를 벗어나지 않고도 당해의 분야에서 통상의 지식을 가진자에 의하여 다양하게 변경실시될 수 있으므로, 본 발명의 기술보호범위는 상술한 특정의 바람직한 실시예에 한정되지 않는다.Since the present invention can be variously modified by those skilled in the art without departing from the scope of the claims claimed in the claims, the technical protection scope of the present invention is limited to the specific preferred embodiments described above. It is not limited.
Claims (4)
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100977496B1 (en) * | 2007-12-21 | 2010-08-23 | 한국기계연구원 | A gold color tile |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6016418A (en) * | 1983-07-08 | 1985-01-28 | Nippon Denshi Kogyo Kk | Plasma cvd processing method |
| JPS61194180A (en) * | 1985-01-18 | 1986-08-28 | Nachi Fujikoshi Corp | Hollow electric discharge vapor deposition device |
| JPH03281775A (en) * | 1990-03-29 | 1991-12-12 | Nisshin Steel Co Ltd | Method for changing color tone of ceramics vapor-deposited film |
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2001
- 2001-03-10 KR KR1020010012487A patent/KR20020072476A/en not_active Application Discontinuation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6016418A (en) * | 1983-07-08 | 1985-01-28 | Nippon Denshi Kogyo Kk | Plasma cvd processing method |
| JPS61194180A (en) * | 1985-01-18 | 1986-08-28 | Nachi Fujikoshi Corp | Hollow electric discharge vapor deposition device |
| JPH03281775A (en) * | 1990-03-29 | 1991-12-12 | Nisshin Steel Co Ltd | Method for changing color tone of ceramics vapor-deposited film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100977496B1 (en) * | 2007-12-21 | 2010-08-23 | 한국기계연구원 | A gold color tile |
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