KR20020055308A - Pad for chemical mechanical polishing and method thereof - Google Patents
Pad for chemical mechanical polishing and method thereof Download PDFInfo
- Publication number
- KR20020055308A KR20020055308A KR1020000084732A KR20000084732A KR20020055308A KR 20020055308 A KR20020055308 A KR 20020055308A KR 1020000084732 A KR1020000084732 A KR 1020000084732A KR 20000084732 A KR20000084732 A KR 20000084732A KR 20020055308 A KR20020055308 A KR 20020055308A
- Authority
- KR
- South Korea
- Prior art keywords
- pad
- chemical mechanical
- mechanical polishing
- abrasive
- polishing pad
- Prior art date
Links
- 239000000126 substance Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000005498 polishing Methods 0.000 title claims description 44
- 239000002245 particle Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000000178 monomer Substances 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 238000004132 cross linking Methods 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 claims abstract description 5
- 238000005470 impregnation Methods 0.000 claims description 20
- 238000001723 curing Methods 0.000 claims description 14
- 125000000524 functional group Chemical group 0.000 claims description 5
- 239000002202 Polyethylene glycol Substances 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 229920002678 cellulose Polymers 0.000 claims description 4
- 239000001913 cellulose Substances 0.000 claims description 4
- 229920001223 polyethylene glycol Polymers 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- 238000001029 thermal curing Methods 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 238000001227 electron beam curing Methods 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 150000002894 organic compounds Chemical group 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 2
- 238000013007 heat curing Methods 0.000 claims 1
- 238000007517 polishing process Methods 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000003082 abrasive agent Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- -1 acryl Chemical group 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
본 발명은 화학적 기계적 연마용 패드 및 그 제조 방법에 관한 것으로, 특히 화학적 기계적 연마(CMP) 공정에서 널리 사용되고 있는 연마재 함침 패드를 제조할 때 연마재 입자와 패드 물질 모노머(pad material monomer)를 화학적으로 결합시키는 분자를 사용하여 연마재가 패드에 균일하게 분포하도록 제작하므로, 기존 함침 패드에서 발생되는 긁힘(scratch) 현상을 제거하고 우수한 화학적 기계적 연마 특성을 확보할 수 있는 화학적 기계적 연마용 패드 및 그 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pad for chemical mechanical polishing and a method of manufacturing the same, and particularly to chemically combine abrasive particles with a pad material monomer when manufacturing an abrasive pad which is widely used in chemical mechanical polishing (CMP) processes. In order to uniformly distribute the abrasive to the pad by using a molecule to make a chemical mechanical polishing pad and a method for manufacturing the same to remove the scratches generated in the existing impregnation pad and to secure excellent chemical mechanical polishing properties It is about.
일반적으로, 반도체 소자의 제조 공정에 적용하는 화학적 기계적 연마 공정에 연마재 함침 패드가 널리 사용하고 있다. 연마재 함침 패드는 연마재 입자와 액체 상태의 패드 물질 모노머를 혼합하고, 그 혼합물을 경화시켜 화학적 기계적 연마용으로 제작된다. 기존의 패드는 패드 내의 연마재 분포가 매우 불균일하게 분포되어 있어 연마재 밀도가 높은 곳과 연마재 밀도가 낮은 곳의 연마 속도가 상이하게 다르다. 이로 인하여 웨이퍼 연마 특성에 악영향을 미칠 뿐만 아니라 긁힘 현상이 과다하게 발생하여 반도체 소자의 전기적 특성과 수율을 현저하게 저하시키고 있다.In general, abrasive impregnation pads are widely used in chemical mechanical polishing processes applied to the manufacturing process of semiconductor devices. An abrasive impregnated pad is prepared for chemical mechanical polishing by mixing abrasive particles with a pad material monomer in a liquid state and curing the mixture. Conventional pads have very uneven distribution of abrasives in the pads, so that the polishing speeds at the high abrasive density and the low abrasive density are different. This not only adversely affects the polishing characteristics of the wafer, but also causes excessive scratches, which significantly reduces the electrical characteristics and yield of the semiconductor device.
도 1은 종래 화학적 기계적 연마용 패드를 나타낸 단면도이다. 연마재 함침 패드(11)의 사용량이나 패드(11)의 콘디션닝(conditioning)이 증가할수록 패드(11) 내부의 연마재 입자(12)가 노출되는데, 상술한 바와 같이 경화 과정중 패드 물질의 고유 특성치가 변하게 되는데, 연마재 입자(12)는 서로 응집되어 과립(cluster)화된다. 이 입자(12)가 있는 부위에서는 화학적 기계적 연마 공정을 진행하는 동안 연마 속도가 다른 곳보다 유난히 증가하면서 긁힘 현상을 유발시키게 된다. 미설명 부호(13)은 경화된 패드 물질이다.1 is a cross-sectional view showing a conventional chemical mechanical polishing pad. As the amount of the abrasive impregnated pad 11 or the conditioning of the pad 11 increases, the abrasive particles 12 inside the pad 11 are exposed. As the abrasive particles 12 agglomerate to one another, they become granulated. In the area where the particles 12 are present, the polishing rate is exceptionally increased during the chemical mechanical polishing process, causing scratches. Reference numeral 13 is a cured pad material.
도 2a 및 도 2b는 도 1의 패드를 사용하여 화학적 기계적 연마 공정을 진행하는 것을 설명하기 위한 소자의 단면도이다.2A and 2B are cross-sectional views of devices for explaining a chemical mechanical polishing process using the pad of FIG. 1.
도 2a는 반도체 소자를 평탄화시키기 전에 층간 절연막을 증착한 단면도이다. 하부 패턴이 형성된 기판(21)에서 하부 패턴의 밀도에 따라 층간 절연막(22)의 표면부에는 각기 다른 단차(step height)가 존재하는데, 연마재 함침 패드(11)를 사용하여 연마 정지선 A-A'까지 연마할 경우 슬러리 사용량을 상당히 감소시키면서 우수한 연마 평탄도를 얻을 수 있다.2A is a cross-sectional view of depositing an interlayer insulating film before planarizing the semiconductor device. In the substrate 21 on which the lower pattern is formed, different step heights exist on the surface portion of the interlayer insulating layer 22 according to the density of the lower pattern. The polishing stop line A-A 'is formed by using the abrasive impregnation pad 11. When polishing to a high degree of polishing flatness can be obtained while significantly reducing the amount of slurry used.
도 2b는 도 1에 도시된 연마재 함침 패드(11)를 사용하여 화학적 기계적 연마 공정을 진행할 경우 층간 절연막(22)의 표면에 발생한 긁힘 현상을 나타낸 단면도이다. 도 1에서 나타낸 것처럼 과립이 있는 부위는 입자 평균 크기 및 밀도가 다른 부위보다 상당히 높아 연마 속도가 빠르기 때문에 층간 절연막(22)의 표면에 심한 손상과 긁힘(23)을 유발하게 된다. 결국 후속 공정을 계속 할 경우 결함(defect)으로 작용되어 소자의 전기적 특성에 악영향을 미칠 수 있다.FIG. 2B is a cross-sectional view illustrating a scratch phenomenon occurring on the surface of the interlayer insulating layer 22 when a chemical mechanical polishing process is performed using the abrasive impregnated pad 11 shown in FIG. 1. As shown in FIG. 1, the granules have a larger average particle size and density than other portions, and thus have a high polishing rate, thereby causing severe damage and scratches 23 on the surface of the interlayer insulating layer 22. As a result, subsequent processing can act as a defect and adversely affect the electrical properties of the device.
따라서, 본 발명은 화학적 기계적 연마(CMP) 공정에서 널리 사용되고 있는 연마재 함침 패드를 제조할 때 연마재 입자와 패드 물질 모노머(pad material monomer)를 화학적으로 결합시키는 분자를 사용하여 연마재가 패드에 균일하게 분포하도록 제작하므로, 기존 함침 패드에서 발생되는 긁힘(scratch) 현상을 제거하고 우수한 화학적 기계적 연마 특성을 확보할 수 있는 화학적 기계적 연마용 패드 및 그 제조 방법을 제공함에 그 목적이 있다.Therefore, the present invention uses a molecule that chemically bonds the abrasive particles and the pad material monomer when manufacturing the abrasive impregnated pad which is widely used in chemical mechanical polishing (CMP) process, the abrasive is distributed evenly on the pad. In order to provide a chemical mechanical polishing pad and a method of manufacturing the same, it is possible to remove the scratches generated in the existing impregnation pad and secure excellent chemical mechanical polishing properties.
이러한 목적을 달성하기 위한 본 발명에 따른 화학적 기계적 연마용 패드 제조 방법은 이중 기능성을 갖는 화합물을 연마재 입자와 결합시켜 이종 연마재를 생성하고, 상기 이종 연마재와 패드 모노머를 혼합한 액체를 경화시켜 연마재 함침 패드를 만드는 것을 특징으로 한다.In order to achieve the above object, the method for manufacturing a chemical mechanical polishing pad according to the present invention combines a compound having dual functionality with abrasive particles to produce a heterogeneous abrasive, and hardens a liquid mixed with the heterogeneous abrasive and the pad monomer to impregnate the abrasive. Characterized by making a pad.
상기에서, 연마재 입자는 산화 실리콘, 산화 알루미늄, 산화 탄탈륨을 사용하고, 화합물은 전자 주개 기와 가교 결합 기를 포함하는 물질을 사용한다.In the above, the abrasive particles use silicon oxide, aluminum oxide, tantalum oxide, and the compound uses a material containing an electron donor group and a crosslinking group.
전자 주개 기는 할로겐 원소인 불소, 브롬, 염소, 요오드를 포함하는 물질이나, 유기화합물성기인 -OH와 -NH2를 포함하는 물질을 사용하고, 가교 결합 기는 패드 모노머와 결합이 용이한 -COOH, -OH, -NH2, -C=C-를 포함하는 물질을 사용한다.The electron donor group uses a material containing fluorine, bromine, chlorine and iodine, which are halogen elements, or a material containing -OH and -NH 2 , which are organic compound groups. Materials comprising -OH, -NH 2 , -C = C- are used.
패드 모노머는 가교 결합이 용이하고 수용액에 잘 용해되는 폴리비닐 알콜계, 폴리에틸렌 글리콜계, 셀룰로오스계, 아크릴계를 사용한다.The pad monomer may be polyvinyl alcohol, polyethylene glycol, cellulose, or acryl, which is easily cross-linked and dissolved in an aqueous solution.
함침 패드를 경화하는 방법은 열 경화, 자외선 경화, 전자빔 경화를 사용한다.The method of curing the impregnation pad uses thermal curing, ultraviolet curing, or electron beam curing.
도 1은 종래 화학적 기계적 연마용 패드를 나타낸 단면도.1 is a cross-sectional view showing a conventional chemical mechanical polishing pad.
도 2a 및 도 2b는 도 1의 패드를 사용하여 화학적 기계적 연마 공정을 진행하는 것을 설명하기 위한 소자의 단면도.2A and 2B are cross-sectional views of devices for explaining a chemical mechanical polishing process using the pad of FIG. 1.
도 3은 본 발명에 따른 화학적 기계적 연마용 패드를 나타낸 단면도.3 is a cross-sectional view showing a pad for chemical mechanical polishing according to the present invention.
도 4는 연마재 입자와 서로 다른 기능성 기를 갖는 화합물과의 반응에서 생긴 이종 연마재와 패드 물질 모노머와 반응을 나타낸 구조식.Figure 4 is a structural formula showing the reaction between the abrasive material and the pad material monomer resulting from the reaction of the abrasive particles with the compound having different functional groups.
도 5a 및 도 5b는 도 3의 패드를 사용하여 화학적 기계적 연마 공정을 진행하는 것을 설명하기 위한 소자의 단면도.5A and 5B are cross-sectional views of devices for explaining a chemical mechanical polishing process using the pad of FIG. 3.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
11, 31: 패드12, 32: 연마재 입자11, 31: pad 12, 32: abrasive particles
13, 33: 경화된 패드 물질21, 51: 기판13, 33: cured pad material 21, 51: substrate
22, 52: 층간 절연막23: 긁힘부22, 52: interlayer insulating film 23: scratched portion
41: 연마재 입자 표면의 원자 구조41: Atomic structure of abrasive particle surface
42: 기능성 기를 포함하는 화합물 구조42: compound structure comprising a functional group
43: 이종 연마재44: 경화하기 전의 패드 물질 모노머43: heterogeneous abrasive 44: pad material monomer before curing
이하, 본 발명을 첨부된 도면을 참조하여 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
도 3은 본 발명에 따른 화학적 기계적 연마용 패드를 나타낸 단면도이다. 도 1에 도시된 기존의 연마제 함침 패드(11)와는 달리 본 발명의 연마재 함침 패드(31)는 연마재 입자들(32)이 비교적 균일하게 분포되어 있고, 패드(31)와 화학적으로 결합되어 있어서 패드(31)로부터 쉽게 떨어지지 않아 패드(31)의 수명을 더 길게 유지시킬 수 있고, 경화 과정에서 연마재 입자(42)가 과립화되는 것을 방지할 수 있다. 미설명 부호(33)은 경화된 패드 물질이다.3 is a cross-sectional view showing a chemical mechanical polishing pad according to the present invention. Unlike the conventional abrasive impregnated pad 11 shown in FIG. 1, the abrasive impregnated pad 31 of the present invention has a relatively uniform distribution of abrasive particles 32, and is chemically bonded to the pad 31 so as to provide a pad. It is not easy to fall from 31 so that the life of the pad 31 can be maintained longer, and the abrasive particles 42 can be prevented from granulating during the curing process. Reference numeral 33 is a cured pad material.
도 4는 연마재 입자와 이종 작용기(bi-functional group)를 갖는 화합물과의 반응에서 생긴 이종 연마재와 패드 물질 모노머와의 반응을 나타낸 구조식이다. 다시 말해서, 도 4의 구조식은 연마재 입자 표면의 원자 구조(41)와 이종 작용기를 포함하는 화합물 구조(42)를 미리 반응시켜 이종 연마재(secondary abrasive; 43)를 생성하고, 이종 연마재(43)와 경화하기 전의 패드 물질 모노머(44)를 반응시키는 것을 나타내고 있다. 연마재 입자 표면에 있는 -OH 기와 화합물의 -OH 기가 반응하여 -Si-O-Si- 결합을 생성시켜 이종 연마제를 형성시킨다. 이 연마재는 표면에 -OH 기와-COOH 기가 공존하게 되는데, -COOH 기는 경화 과정중 패드 모노머와 가교결합을 형성하며 연마재를 패드에 고정시키는 역할과 균일하게 분포시키는 역할을 수행한다. 또한 연마재 표면의 -OH 기는 화학적 기계적 연마 공정에 참여하여 층간 절연막을 제거하는 기능을 담당하게 된다.Figure 4 is a structural formula showing the reaction between the abrasive material and the pad material monomer resulting from the reaction of the abrasive particles with a compound having a bi-functional group (bi-functional group). In other words, the structural formula of FIG. 4 generates the secondary abrasive 43 by reacting the atomic structure 41 on the surface of the abrasive particle with the compound structure 42 including hetero functional groups in advance. It shows that the pad material monomer 44 before hardening is made to react. The -OH groups on the surface of the abrasive particles and the -OH groups of the compound react to form -Si-O-Si-bonds to form heterogeneous abrasives. The abrasive is co-existing -OH group and -COOH group on the surface, the -COOH group forms a crosslink with the pad monomer during the curing process and serves to uniformly distribute the abrasive to the pad. In addition, the —OH group on the surface of the abrasive participates in the chemical mechanical polishing process and serves to remove the interlayer insulating film.
도 5a 및 도 5b는 도 3의 패드를 사용하여 화학적 기계적 연마 공정을 진행하는 것을 설명하기 위한 소자의 단면도이다.5A and 5B are cross-sectional views of devices for explaining a chemical mechanical polishing process using the pad of FIG. 3.
도 5a는 반도체 소자를 평탄화시키기 전에 층간 절연막을 증착한 단면도이다. 하부 패턴이 형성된 기판(51)에서 하부 패턴의 밀도에 따라 층간 절연막(52)의 표면부에는 각기 다른 단차(step height)가 존재하는데, 연마제 함침 패드(31)를 사용하여 연마 정지선 A-A'까지 연마할 경우 슬러리 사용량을 상당히 감소시키면서 우수한 연마 평탄도를 얻을 수 있다.5A is a cross-sectional view of depositing an interlayer insulating film before planarizing the semiconductor device. In the substrate 51 on which the lower pattern is formed, there are different step heights on the surface of the interlayer insulating layer 52 according to the density of the lower pattern. The polishing stop line A-A 'is formed by using the abrasive impregnation pad 31. When polishing to a high degree of polishing flatness can be obtained while significantly reducing the amount of slurry used.
도 5b는 도 3에 도시된 본 발명의 연마재 함침 패드(31)를 사용하여 화학적 기계적 연마 공정으로 연마한 단면도이다. 연마재 입자가 균일하게 분포되어 있기 때문에 층간 절연막(52)의 표면에 긁힘 현상이 발생되는 것을 방지하고, 우수한 평탄도를 확보할 수 있다.FIG. 5B is a cross-sectional view of the abrasive impregnated pad 31 of the present invention shown in FIG. 3 polished by a chemical mechanical polishing process. Since the abrasive particles are uniformly distributed, scratches can be prevented from occurring on the surface of the interlayer insulating film 52, and excellent flatness can be ensured.
상기한 바와 같이, 본 발명의 화학적 기계적 연마용 패드는 이종 기능성을 갖는 화합물을 연마재 입자와 결합시켜 이종 연마재를 생성하고, 이종 연마재와 패드 모노머를 혼합한 액체를 경화하여 연마재 함침 패드를 제조한다. 이렇게 제조된 연마재 함침 패드는 경화된 후에도 연마재가 패드에 균일하게 분포되어 있어서 반도체 소자를 평탄화하는 화학적 기계적 연마 공정을 진행하더라도 웨이퍼 표면에긁힘이 없고 웨이퍼 표면의 결함을 제거함과 동시에 우수한 연마 특성을 확보할 수 있다.As described above, the chemical mechanical polishing pad of the present invention combines a compound having heterogeneous functionality with abrasive particles to produce a heterogeneous abrasive, and hardens the liquid mixed with the heterogeneous abrasive and the pad monomer to prepare an abrasive impregnated pad. The abrasive impregnated pad thus manufactured is uniformly distributed in the pad even after curing, so that even if the chemical mechanical polishing process is used to planarize the semiconductor device, the wafer surface is scratched and defects on the surface of the wafer are eliminated, and at the same time, excellent polishing characteristics are secured. can do.
함침 패드에 사용되는 연마재 입자는 화학적 기계적 연마 특성이 우수한 물질, 예를 들어, 산화 실리콘(silicon oxide), 산화 알루미늄(aluminum oxide) 및 산화 탄탈륨(tantalum oxide) 등을 사용하며, 또한 이러한 연마제 입자는 모두 0.1 내지 1㎛ 범위의 입자 크기를 갖는 것을 사용한다.The abrasive particles used in the impregnation pads use materials having excellent chemical mechanical polishing properties, such as silicon oxide, aluminum oxide, tantalum oxide, and the like. All of those having a particle size in the range of 0.1 to 1 μm are used.
함침 패드에 사용되는 연마재 입자와 액체 상태의 패드 모노머와의 혼합비는 0.25 내지 0.5 : 1로 조절한다.The mixing ratio of the abrasive particles used in the impregnation pad and the pad monomer in the liquid state is adjusted to 0.25 to 0.5: 1.
함침 패드에 사용되는 화합물은 전자 주개 기(electron donor group)와 가교 결합 기(cross-linking group)를 포함하는 물질을 사용하는데, 전자 주개 기는 할로겐 원소인 불소, 브롬, 염소, 요오드를 포함하는 물질이나, 유기화합물성기(organic group)인 -OH와 -NH2를 포함하는 물질을 사용하며, 가교 결합 기는 패드 모노머와 결합이 용이한 -COOH, -OH, -NH2, -C=C-를 포함하는 물질을 사용한다.The compound used in the impregnation pad uses a material containing an electron donor group and a cross-linking group, and the electron donor group includes a material containing halogen elements fluorine, bromine, chlorine and iodine. However, a material containing -OH and -NH 2 , which is an organic group, is used, and the crosslinking group is -COOH, -OH, -NH 2 , -C = C- which is easily bonded to the pad monomer. Use materials that contain them.
함침 패드에 사용되는 화합물의 농도는 연마재 입자 표면에 분포되어 있는 -OH기의 수에 따라 100 내지 1000 : 1 비율로 혼합한다.The concentration of the compound used for the impregnation pad is mixed in a ratio of 100 to 1000: 1 depending on the number of -OH groups distributed on the abrasive grain surface.
함침 패드에 사용되는 모노머는 가교 결합이 용이하고 수용액에 잘 용해되는 물질, 예를 들어, 폴리비닐 알콜(polyvinyl alcohol)계, 폴리에틸렌 글리콜(polyethylene glycol)계, 셀룰로오스(cellulose)계, 아크릴(acryl)계를 사용한다.Monomers used in the impregnation pads are easily crosslinked and are well soluble in aqueous solutions, for example, polyvinyl alcohol, polyethylene glycol, cellulose, and acryl. Use the system.
함침 패드를 경화하는 방법은 열 경화, 자외선 경화, 전자빔(e-beam) 경화를 사용하며, 경화 방법 중 열 경화 방법에서 경화 온도는 400 내지 500℃ 범위이다.The method of curing the impregnation pad uses thermal curing, ultraviolet curing, e-beam curing, and the curing temperature in the thermal curing method among the curing methods is in the range of 400 to 500 ° C.
상술한 바와 같이, 본 발명은 연마재 입자 분포가 균일한 패드를 사용하므로써, 웨이퍼 표면에 발생되는 긁힘 현상을 방지할 수 있어서 후속 공정이 용이하고 안정적인 전기적 특성을 확보할 수 있다. 또한, 연마재 입자들이 패드에 고정된 패드를 사용하므로써, 그 패드에서 연마되는 웨이퍼 수가 증가함에 따라 입자들이 패드 표면에 노출되는데, 입자들이 패드에서 쉽게 이탈되는 것을 방지할 수 있어 패드의 수명을 증가시킬 수 있고, 안정적인 연마 속도를 확보할 수 있다.As described above, the present invention can prevent scratches occurring on the surface of the wafer by using a pad having a uniform abrasive particle distribution, so that subsequent processes are easy and stable electrical characteristics can be secured. In addition, by using a pad in which abrasive particles are fixed to the pad, as the number of wafers polished on the pad increases, the particles are exposed to the pad surface, which can prevent the particles from easily leaving the pad, thereby increasing the life of the pad. Can ensure a stable polishing rate.
Claims (16)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000084732A KR20020055308A (en) | 2000-12-28 | 2000-12-28 | Pad for chemical mechanical polishing and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000084732A KR20020055308A (en) | 2000-12-28 | 2000-12-28 | Pad for chemical mechanical polishing and method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020055308A true KR20020055308A (en) | 2002-07-08 |
Family
ID=27688060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000084732A KR20020055308A (en) | 2000-12-28 | 2000-12-28 | Pad for chemical mechanical polishing and method thereof |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20020055308A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100516657B1 (en) * | 2002-07-15 | 2005-09-22 | 주식회사 하이닉스반도체 | Abrasive capsulation pad for fabricating semiconductor device, method for manufacturing the same and chemical mechanical polishing method using the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5250085A (en) * | 1993-01-15 | 1993-10-05 | Minnesota Mining And Manufacturing Company | Flexible bonded abrasive articles, methods of production and use |
| KR970009217A (en) * | 1995-07-03 | 1997-02-24 | 이데이 노부유끼 | VTR integrated camera device |
| US5624303A (en) * | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
| US5919082A (en) * | 1997-08-22 | 1999-07-06 | Micron Technology, Inc. | Fixed abrasive polishing pad |
| US5938801A (en) * | 1997-02-12 | 1999-08-17 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
| JP2000053946A (en) * | 1998-08-05 | 2000-02-22 | Showa Denko Kk | Abrasive material composition |
-
2000
- 2000-12-28 KR KR1020000084732A patent/KR20020055308A/en not_active Application Discontinuation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5250085A (en) * | 1993-01-15 | 1993-10-05 | Minnesota Mining And Manufacturing Company | Flexible bonded abrasive articles, methods of production and use |
| KR970009217A (en) * | 1995-07-03 | 1997-02-24 | 이데이 노부유끼 | VTR integrated camera device |
| US5624303A (en) * | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
| US5879222A (en) * | 1996-01-22 | 1999-03-09 | Micron Technology, Inc. | Abrasive polishing pad with covalently bonded abrasive particles |
| US5938801A (en) * | 1997-02-12 | 1999-08-17 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
| US5919082A (en) * | 1997-08-22 | 1999-07-06 | Micron Technology, Inc. | Fixed abrasive polishing pad |
| JP2000053946A (en) * | 1998-08-05 | 2000-02-22 | Showa Denko Kk | Abrasive material composition |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100516657B1 (en) * | 2002-07-15 | 2005-09-22 | 주식회사 하이닉스반도체 | Abrasive capsulation pad for fabricating semiconductor device, method for manufacturing the same and chemical mechanical polishing method using the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100336598B1 (en) | A Cerium Oxide Particle for the Preparation of a Cerium Oxide Abrasive | |
| KR100459528B1 (en) | A polishing pad comprising covalently bonded particles, a method of manufacturing the same, and a flattening machine including the same | |
| US8119517B2 (en) | Chemical mechanical polishing method and method of manufacturing semiconductor device | |
| US6953388B2 (en) | Polishing pad, and method and apparatus for polishing | |
| JP4515316B2 (en) | Method for polishing an exposed surface of a semiconductor wafer | |
| KR20120080253A (en) | Slurry for chemical mechanical polishing and polishing method for substrate using same | |
| KR100786948B1 (en) | Adjuvant capable of controlling a polishing selectivity and chemical mechanical polishing slurry comprising the same | |
| KR20110000578A (en) | Hydrophilic and hydrophobic silane surface modification of abrasive grains | |
| CN108161774B (en) | Polishing pad and manufacturing method thereof | |
| WO2001091971A1 (en) | Polishing pads for chemical mechanical planarization | |
| KR20000016516A (en) | Method and device for cmp of electronic device | |
| CN1463287A (en) | Cerium oxide slurry, and method of mfg. substrate | |
| JP2012129406A (en) | Chemical mechanical polishing method and slurry used therein | |
| US20030139127A1 (en) | Capsulated abrasive composition and polishing pad using the same | |
| JP3910921B2 (en) | Polishing cloth and method for manufacturing semiconductor device | |
| KR100539983B1 (en) | Ceria Abrasives for CMP and Methods of Fabricating the Same | |
| KR100786949B1 (en) | Adjuvant capable of controlling a polishing selectivity and chemical mechanical polishing slurry comprising the same | |
| KR20020055308A (en) | Pad for chemical mechanical polishing and method thereof | |
| KR20110008968A (en) | Multi-selective polishing slurry composition and method for fabricating semiconductor device using the same | |
| JP2002001648A (en) | Polishing pad, and polishing device and polishing method using the same | |
| JP2008000847A (en) | Polishing material | |
| KR100475457B1 (en) | An additive composition, a slurry composition including the additive composition, and a method for polishing an object using the slurry composition | |
| JP2002158197A (en) | Polishing pad as well as apparatus and method for polishing using the same | |
| KR100699522B1 (en) | Method for manufacturing polishing pad for wafer and the polishing pad | |
| KR20190072116A (en) | Abrasive particle-dispersion layer complex and polishing slurry composition comprising the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |