KR20020048369A - Method of forming a thin metal layer on an insulating substrate - Google Patents

Abstract

The present invention relates to the formation of a very thin, uniform metal layer 306 on a resin substrate 307, such as a copper layer on an epoxy-based substrate. Such copper / resin laminates 306 and 307 are useful, for example, as blanks for forming printed circuits.

Description

Method of forming a thin metal layer on an insulating substrate

Two common methods of forming a printed circuit board are "Print and Etch" and "Patten Plating".

In a "print and etch" process, copper foil is laminated on both sides of the fiberglass / epoxy prepreg (not hardened) under heating and pressurization to form a circuit board blank with copper layers on both sides of a relatively hard dielectric layer. do. Most typically copper is 1 ounce of copper with a thickness of 1.2 mils (30 microns). Through holes and blind via holes are drilled in the blank. Introduce palladium into the buyer. The entire circuit board is then electroplated with copper to provide electrical connections through the via holes. Such copper plating is typically 1.2 mils thick, resulting in a total thickness of copper of 2.4 mils (60 microns) on both sides of the circuit board. A photoresist layer is applied, exposed and then developed on both sides of the circuit board. Copper is etched, for example copper chloride, and the resist is stripped.

In the "pattern plating" process, a circuit board is formed by the method of a "printing and etching" process. Drill through-hole and blocked via holes. The photoresist is applied, exposed and developed. Introduce platinum into the buyer's hall. Copper is deposited on the exposed circuit traces and throughout the via holes. The exposed copper circuit traces and via holes are then plated with a metal that acts as a resist, such as tin, tin / lead or gold. Strip the resist. The circuit board is then etched to remove copper from areas not protected by the plated resist metal. In addition, the overall thickness of the circuit trace (except the plated metal resist) is typically about 1.2 mils (30 microns).

Both printing and etching processes and pattern plating processes are used to produce fine line printed circuit boards with line widths of less than 2 mils (50 microns). The advantage of the printing and etching method is the control of good line height. The pattern plating method is slightly easier to create a circuit of small line width. Both methods will benefit from the circuit board blanks produced by the method of the present invention.

As printed circuits become more complex and the desire for miniaturization increases, there is always a need for finer resolutions of printed circuits. One of the limitations of printed circuit resolution is the copper layer thickness of the printed circuit board blank being etched; The thinner the metal layer to be etched, the greater the resolution that can be achieved. During copper etching, copper not only dissolves downward on the fiberglass / epoxy dielectric base material, but also on the side, and side etching reduces the resolution of the etched trace.

Assuming the dimensions given above, in the printing and etching method the etching is a 2.4 mil (60 micron) copper layer all the time; In the pattern plating method, the etching is a 1.2 mil (30 micron) layer of copper all the way. It is an object of the present invention to substantially reduce these thicknesses, thereby providing finer printed circuit resolution.

The present invention is directed to providing a circuit board blank having a very thin layer of continuous, nonporous copper, ie from about 0.5 to about 3 microns thick, on a fiberglass / epoxy panel. The copper layer on the circuit board blank only needs to be of sufficient thickness to carry sufficient current for effective electroplating and then via hole formation. For this purpose, it was found that thin copper, such as 0.5 micron, is sufficient to carry the current needed to support an efficient plating process. Copper layers ranging from 0.5 to 3 microns are negligible compared to conventional 1.2 mil thick foil layers or 1.2 mil electrodeposited additional copper thicknesses.

In the printing and etching methods, when plating additional 1.2 mils of copper starting from the negligible thickness of the copper layer of the blank, the etched copper is 1.2-1.3 mils thick instead of 2.4 mils.

Assuming the dimensions discussed above, in the pattern plating method, only the foil, which is the first part of the circuit board blank, is etched. A layer of 0.5 to 3 microns of foil is etched rapidly, thereby minimizing the undercutting of circuit traces consisting predominantly of electrodeposited copper.

Thus, printing and etching methods or pattern plating methods are advantageous when the initial copper layer of the circuit board blank is very thin.

Chemical vapor deposition (CVD) is a well-known technique for depositing a coating by providing a gaseous reactive material that is adjacent to or on the surface of the substrate to produce a solid deposit or coating on the surface. Recent developments in CVD processes, referred to as combustion chemical vapor deposition, or CCVD, are described in US Pat. No. 5,652,021 and are incorporated herein by reference. In this process the reactants are supplied dissolved or suspended in a liquid, which may be a fuel, which is injected from the nozzle into the reaction zone using oxidizing gas as propellant. While the substrate is held near the flame end, the sprayed mixture is ignited to produce a flame or is introduced into the flame. The reactants, which evaporate before or in the flame, produce a film deposited on the substrate. This patent describes various prior CVD processes, some of which supply gaseous or evaporated reactants, some of which utilize sprayed or nebulized solutions, and some of which supply reactive solid powders. This patent also discloses a variety of separate coating techniques, including spray pyrolysis, where the solution is pyrolyzed and sprayed onto a heated substrate to form a coating, and the solid coating material is melted or evaporated in a flame, plasma or other heating device and splashed onto the substrate Or condensation to form a coating.

The technique taught in US Pat. No. 5,652,021 can be used to produce a thin layer of metal, particularly if the metal is oxidation resistant, an example of a metal that can be easily deposited by CCVD is platinum. More reactive metals, such as copper, may be deposited by the method of the present patent in the reducing portion of the flame. However, control is difficult because of the oxidative nature of the flame.

A further improvement of the CCVD process is described in US patent application Ser. No. 08 / 691,853, filed August 2, 1996, which is incorporated by reference. This application describes a CCVD process in which the coating precursor reactant is supplied in a mixture or with a liquid feedstream that is pressurized near a critical pressure and heated to a supercritical temperature before exiting through a nozzle or other restriction. Near critical conditions of the liquid result in a finely atomized or evaporated feed stream. This is because the feed stream exits the nozzle into the area where the coating precursor reacts and deposits the coating on the substrate or is recovered as finely divided powder.

Improvements in the CCVD process that facilitate the deposition of various zero-valent, relatively reactive metals are described in US patent application Ser. No. 09 / 067,975, the teachings of which are incorporated herein by reference. The apparatus and techniques taught in US patent application Ser. No. 09 / 675,975 relate to what is referred to as "controlled atmosphere combustion chemical vapor deposition" or CACCVD. This process facilitates the deposition of reactive metals such as copper or nickel in the zero state.

Examples of dielectric and resistive materials prepared by CCVD and / or CACCVD are found in US patent applications 09 / 069,427, 09 / 069,679, and 09 / 198,285, the teachings of which are incorporated herein by reference. do.

CCVD and / or CACCVD techniques can be used to deposit very thin, uniform, continuous metal layers on a substrate. Continuous metal films as thin as 0.1 microns have been produced. 0.1 micron metal film can be used in the present invention; In order for the electrodeposition for the circuitry to proceed at a moderate rate, the deposited metal layer generally needs to be at least about 0.5 micron thick. If CCVD and / or CACCVD techniques can be used to form the metal layer of the circuit board blank, larger resolutions can be obtained.

The thin metal layer could be deposited by CCVD and / or CACCVD, for example, directly onto a cured dielectric material, such as a fiberglass-filled epoxy resin panel. However, CCVD and CACCVD devices are not currently available to circuit board manufacturers in the field of applying such layers to panels. In addition, CCVD and CACCVD processes need to be very precisely controlled and currently cannot guarantee deposition quality and uniformity in this field. Therefore, it is desirable to carry out these processes by a coater skilled in these techniques. The present invention relates to materials and methods for transferring very thin metal layers to dielectric materials for the formation of circuit board blanks.

A general advantage of the present invention is the production of blanks for printed circuit boards having very thin metal layers, i.e. layers of about 0.1 to about 3 microns thick, preferably about 0.5 to about 2 microns thick.

The present invention relates to the formation of a very thin, uniform metal layer on a resin substrate, such as a copper layer on an epoxy-based substrate. Such copper / resin laminates are useful, for example, as blanks for forming printed circuits.

1 is a schematic diagram with a partial cross section of an apparatus for applying a coating by controlled atmospheric combustion chemical vapor deposition (CACCVD);

FIG. 2 is a close-up perspective view with a partial cross section of a portion of a coating head used in the apparatus of FIG. 1, FIG.

3 is a cross-sectional view of a deposited substrate having a metal layer deposited thereon;

4 is a cross-sectional view of two structures of FIG. 3 stacked on a non-electroconductive resin;

5 is a cross-sectional view showing taking out the deposited substrate;

6A-E illustrate a method of forming a thin film resistor by a moving method according to the present invention;

7A-E illustrate a method of forming a thin film capacitor by a transfer method in accordance with the present invention.

[Summary of invention]

In accordance with the present invention the electrically conductive metal is deposited on a flat, smooth transfer substrate to a thickness of about 0.1 to about 3 microns, preferably about 0.5 to about 2 microns. The metal is typically copper, but may be other electrically conductive metals such as nickel, platinum, silver, gold, tin, zinc, and the like. The metal can be a metal layer doped with an alloy of two or more deposited zero metals or another element. The adhesion of the zero-valent metal deposited onto the transfer substrate should be sufficient to allow the deposited metal layer to remain bonded to the transfer substrate during shipping and handling, generally including reeling of the metal / substrate stack. However, the adhesion between the deposited metal layer and the transfer substrate should be low enough so that when the metal is laminated to a material with greater adhesion, such as a prepreg, the transfer substrate can be peeled off without damage to the film. In this regard, aluminum foil is a particularly preferred substrate and theorizes that alumina formed on the surface is poorly bonded to the deposited metal layer. Polymer films, such as polyimides, are also suitable transfer substrates, provided that the film is able to withstand deposition conditions, in particular temperatures, and the adhesion between the transfer film and the deposited metal layer is low enough to allow subsequent release of the deposited metal layer from the film. . After depositing the metal layer on the substrate, the metal layer side is laminated to an uncured or partially cured dielectric resin, such as a fiberglass-filled epoxy resin (two of these structures on opposite sides of the uncured or partially cured resin layer). To form a two-sided blank). The resin layer is heated until it hardens and hardens to bond to the safely deposited metal layer. At this time, the deposited substrate is peeled off and a blank for manufacturing high resolution printed circuit boards is formed leaving a thin, continuous, uniform metal layer bonded to the cured resin.

The transfer method of the present invention is also useful for forming thin layer passives, in particular capacitors and resistors.

[Detailed Description of a Preferred Example]

For certain applications the circuit board may be formed of precious metals such as silver, gold, or platinum. To form such a metal layer, conventional CCVD techniques such as those taught in U.S. Patent No. 5,652,021 and U.S. Patent Application Serial No. 08 / 691,853 are conveniently used. Most commonly, however, copper and less commonly nickel, tin or other oxidizing metals are the options for forming printed circuit boards. They are best deposited by CACCVD as described in US Patent Application Serial No. 09 / 067,975, supra.

US patent application Ser. No. 09 / 067,975 provides an apparatus and method for chemical vapor deposition, in which the atmosphere is controlled by carefully controlling and blocking the supplied material to form a coating and removing it from the controlled atmosphere. The prepared gas is achieved by passing through a barrier region, where the gas flows out of the controlled atmospheric zone at an average speed of more than 50 feet per minute and preferably more than 100 feet per minute. The controlled atmosphere zone comprises a reaction zone, where the coating precursor reacts, and a deposition zone, where the reaction product of the coating precursor deposits the coating on the substrate. Rapid gas flow through the barrier area necessarily prevents the movement of the gas from the surrounding atmosphere to the deposition area where the gas can react with the coating, the material from which the coating is derived, or the substrate.

Careful control of the material used to form the coating can be provided by feeding the coating precursor at a fixed rate in the liquid medium. The liquid medium is nebulized when the liquid medium evaporates and is fed into the reaction zone where the coating precursor reacts to form the reacted coating precursor. Alternatively, the coating precursor (s) can be supplied as a gas, as a pure coating precursor or as a mixture in a carrier gas. The reacted coating precursor may consist of the reacted components partially, completely and / or in fractions, which flows to the substrate. The reacted coating precursor contacts to deposit a coating on the substrate surface in the deposition area. A curtain of flowing inert gas can be provided around the reaction zone to prevent contamination of the reactive coating material / plasma as a material used in the surrounding apparatus or as a component of the ambient atmosphere.

Evaporation of the liquid medium in the reaction zone and the reaction of the coating precursors require energy input. Depending on the reactivity of the coating material and the substrate, the required energy is provided by various sources, such as combustion, electrical resistance heating, induction heating, microwave heating, RF heating, hot surface heating, laser heating and / or mixing with remotely heated gases. Can be.

(CACCVD) technology provides energy input at a relatively high rate and enables coating deposition at a high rate. In some preferred cases, the fluid medium and / or secondary gas used to atomize the fluid medium may also be a combustible fuel serving as an energy source. In particular, the ability of CACCVD to form high quality adhesive thin film deposits at or near atmospheric is important, thereby avoiding the need for elaborate vacuum or similar separation coatings. For these reasons, in many cases, a CACCVD thin film coating may be applied in situ, or "locally", where the substrate is located.

Combustion chemical vapor deposition (CCVD) is not suitable for coatings and / or coating applications where the substrate requires a non-oxygen environment. For this application, an example of a CACCVD process using non-combustible energy sources such as hot gases, heated tubes, radiant energy, microwaves and energized photons as infrared or laser sources is suitable. In these applications it is important that all liquids and gases provided to the reaction and deposition areas be oxygen free. The coating precursor may be supplied as a solution or suspension in liquid. Liquid ammonia and propane are suitable for the deposition of nitrides or carbides, respectively. The use of these non-combustible energy sources in controlled atmospheric chemical vapor deposition systems that form deposits at or above atmospheric pressure is a particularly useful feature of CACCVD. The use of non-combustible energy sources in CVD systems that provide enhanced atomization by rapid release of liquid coating precursors at near critical temperature and pressure conditions through nozzles, or similar restrictions, is a more unique useful feature of CACCVD.

Because the CACCVD process and apparatus provide a controlled atmosphere area that is movable relative to the substrate, the coating of the coating on the substrate may be larger than the controlled atmosphere area, and thus larger than that otherwise treated by conventional vacuum chamber deposition techniques. Enable manufacturing.

A further advantage of the CACCVD system is the ability to coat the substrate without requiring additional energy supplied to the substrate. Thus, this system allows the substrate to be coated which could not withstand the temperature performed on the substrate by most previous systems. For example, a nickel coating may be provided on a polyimide sheet substrate without causing deformation of the substrate. Previously, atmospheric deposition techniques could provide chemical vapor deposition of metallic nickel due to its strong affinity for oxygen. On the other hand, vacuum processing of polymer sheet substrates, such as polyimide sheets, has been problematic due to degassing of water and organic materials, which tend to be dimensional instability when treated with heat and vacuum.

The controlled atmospheric combustion chemical vapor deposition (CACCVD) apparatus described in US Patent Application Serial No. 09 / 067,975 is shown in FIGS. 1 and 2. The coating precursor 10 is mixed with the liquid medium 12 in the forming area 14, including the mixing or holding tank 16. The precursor 10 and the liquid medium 12 are formed into a flowing stream which is pressurized by the pump 18, filtered by the filter 20 and fed through the conduit 22 to the atomization zone 24. And flows continuously from the atomization zone through the reaction zone 26, the deposition zone 28 and the barrier zone 30. Both reaction zone 26 and deposition zone 28 are contained in a controlled atmosphere zone.

The flowing stream is atomized as it passes into atomization zone 24. Atomization can be accomplished by recognized techniques for atomizing flowing liquid streams. In the apparatus shown, atomization is carried out by venting a high velocity atomizing gas stream around and immediately adjacent to the flowing stream as the flowing stream exits the conduit 22. The atomizing gas stream is supplied from a gas cylinder or another source of high pressure gas. In the example shown, high pressure hydrogen (H ₂ ) is used as both atomizing gas and fuel. Atomization gas is supplied from the hydrogen gas cylinder 32 to the conduit 38 via a control valve 34 and a flow meter 36. Conduit 38 extends to the atomization zone concentrically with conduit 22 where both conduits terminate contact with the liquid stream through which the high velocity hydrogen atomization gas flows, thereby a stream of fine particles suspended in ambient gas / vapor. Nebulized. This stream flows into reaction zone 26 where the liquid medium evaporates and the coating precursor reacts to form a reacted coating precursor, which may include dissociation of the coating precursor with ions of the components of the coating precursor, Or a flowing stream of plasma. The flowing stream then contacts the substrate 40, thereby adhering the coating onto the substrate in the deposition zone 28.

The flowing stream can be atomized by injecting atomizing gas stream directly into the stream of liquid medium / coating precursor as it exits conduit 22. Independently, atomization may be accomplished by applying ultrasound or similar energy to the liquid stream as the liquid stream exits the conduit 22. Restrictions, such as through a hollow needle with a restricted outlet or nozzle, for supplying the liquid medium / coating precursor at a temperature within 50 ° C., the critical temperature of the liquid medium / coating precursor, and at a pressure above its critical pressure. Further preferred atomization techniques are disclosed in patent application 08 / 691,853, which includes liquid medium / coating precursors exiting from the restriction into the lower pressure zone. Rapid pressure release of the high energy liquid medium / coating precursor results in its fine atomization and vaporization.

The vaporization of the liquid medium and the reaction of the coating precursors require substantial energy input before the flowing stream leaves the reaction zone. Such energy input may occur when the flowing stream passes through conduit 22 and / or in the atomization and reaction zones. Energy input may be performed using a variety of known heating techniques such as fuel combustion, electrical resistance heating, microwave or RF. Heating, induction heating, radiant heating, mixing of a remotely heated liquid or gas with a flowing stream, photon heating as a laser, heat exchange through a hot surface, and the like. In the preferred embodiment illustrated, energy input is achieved by combustion of fuel and oxidant in direct contact with the flowing stream as it passes through the reaction zone. This relatively new technique, referred to as combustion chemical vapor deposition (CCVD), is described in more detail in US Pat. No. 5,652,021, supra. In the illustrated example, fuel (hydrogen) is supplied from the hydrogen gas cylinder 32 to the conduit 44 via a regulating valve, flow meter 42. The oxidant (oxygen) is supplied from the oxygen gas cylinder 46 to the conduit 52 through the control valve 48 and the flow meter 50. Conduit 52 extends concentrically around conduit 44, and conduit 44 extends concentrically around conduits 22 and 38. Hydrogen and oxygen combust as they exit each conduit to produce a combustion product, which is mixed with the sprayed liquid medium and the coating precursor in the reaction zone 26, whereby it is heated to evaporate the liquid medium and react with the coating precursor. Cause.

A curtain of flowing inert gas provided around at least the initial portion of the reaction zone separates the reactive gas from the material present in the device located proximate the reaction zone. Inert gas, such as argon, is supplied from inert gas cylinder 54 to conduit 60 through control valve 56 and flow meter 58. Conduit 60 extends concentrically around conduit 52. Conduit 60 extends beyond the ends of the remaining conduits 22, 38, 44, and 52 and extends proximate to the substrate, whereby the conduit, together with substrate 40, is generally coated with coating 62. There is a function of defining a deposition area 28 deposited on a substrate in the form of a cross section of 60. As the inert gas flows past the end of the oxygen conduit 52, the inert gas initially forms a flowing curtain that extends around the reaction zone and blocks the reactive components therein from the conduit 60. As the inert gas proceeds down the conduit 60, the inert gas becomes part of the flowing stream that mixes with the gas / plasma from the reaction zone to the deposition zone 28.

An ignition source is needed to ignite hydrogen and oxygen initially. Separately manually operated lighting or ignition devices are sufficient for many applications, but may require a temporary reduction in the flow of inert gas until a stable flame surface is obtained. In some applications, the overall flow of gas is so large that no stable flame surface is needed without assistance. Then, when the combustible gas enters the reaction zone, it is necessary to have an ignition device capable of igniting the combustible gas continuously or semi-continuously. Pilot flame or spark generating devices are examples of ignition sources that may be used.

In the deposition zone 28, the reacted coating precursor deposits the coating 62 on the substrate 40. The remainder of the flowing stream flows from the deposition zone through the barrier zone 30 to the surroundings or to the surrounding atmosphere. Barrier zone 30 has the effect of preventing contamination of the atmospheric zone controlled by the components of the ambient atmosphere. The controlled atmosphere zone includes a reaction zone, a deposition zone and additional space accessible after the flowing stream passes through the deposition zone 28 and before passing through the barrier zone 30. Its high velocity is characteristic of this region as the flowing stream passes through barrier region 30. By subjecting the flowing stream to achieve a speed of at least 50 feet per minute as it passes through the barrier area, the possibility of contamination of the atmospheric area controlled by the components of the ambient atmosphere is substantially eliminated in most coating applications. By subjecting the flowing stream to achieve a speed of at least 100 feet per minute, the possibility of ambient air pollution in the controlled atmosphere area is necessarily eliminated in coating operations that are more sensitive to contamination, such as in the production of nitride or carbide coatings.

In the device of FIG. 1, a collar 64 is attached to the distal end of the conduit 60 adjacent the deposition area 28 and extends outward at right angles. Barrier region 30 is defined by a clearance provided between collar 64 and substrate 40. The collar is shaped to provide an isoform surface 66 that can be developed in close proximity to the substrate surface such that relatively small gaps are provided for the release of gas passing from the deposition area to the ambient atmosphere. The gap between the isoform surface 64 of the collar and the substrate is small enough so that the exhaust gas achieves the speed required for the barrier area for at least some of the passages between the collar and the substrate. For this reason, the isomorphic surface 64 of the collar 62 is in the form which is always parallel to the surface of the board | substrate 40. FIG. As in the illustrated embodiment, when the surface of the substrate 40 is necessarily planar, the isoform surface of the substrate is also substantially planar.

Edge effects, such as elevated temperatures and residual reactive components, generated adjacent to the ends of the conduit 60 may extend beyond the area of the substrate located directly in front of the ends of the conduit 60 into the deposition area. The collar 64 prevents back-mixing of the surrounding gas into the deposition area due to possible Venturi effects, and is extended by the previously revealed edge effect, so that the entire area of the deposition area is swept through the area between the collar and the substrate. It must extend out from its coupling into conduit 60 at a distance sufficient to be protected from the backflow of the surrounding gas by the “wind” of the fast exhaust gas. Extended collars ensure contamination protection throughout the controlled atmosphere area, including the entire extended deposition area. The diameter of the collar should be at least twice the inner diameter of conduit 60 and preferably at least five times the inner diameter of conduit 60. The inner diameter of the conduit 60 is typically 10 to 30 millimeters, preferably 12 to 20 millimeters.

In operation, the collar 64 lies substantially parallel to the surface of the substrate 40 and has a distance of one centimeter or less therefrom. Preferably, the opposing surfaces of the collar and the substrate are two to five millimeters apart. A spacing device, such as three fixed or adjustable pins (not shown), may be provided over the collar to help maintain a suitable distance between the collar and the substrate.

The device shown in FIG. 1 is particularly useful for applying a coating to a substrate that cannot be processed in a specially controlled environment, such as a vacuum chamber or clean room, because it is too large or not convenient. The illustrated coating technique is useful because it can be applied to (a) a substrate larger than the controlled atmosphere area, and (b) more conveniently under atmospheric conditions and in the "on-site" position. The series of concentric conduits 22, 38, 44, 52 and 60 form a coating head 68 which can be provided by relatively small flexible tubes and which can be small enough to be portable. The application of energy to the coating precursors by combustion of fuel or by supplying heat generated by electrical resistance is relatively small and suitable for portable coating heads. Large substrates may have a coating head that repeatedly traverses the substrate in a raster or similar predetermined pattern, or traverse the substrate as an array of coating heads arranged to provide incrementally uniform coating Or by rasterizing an array of coating heads. In addition to allowing thin film coatings of products that were previously too large to be coated, this technique allows for the coating of larger units of substrate previously coated under vacuum conditions. Especially in the case of mass production of substrates, manufacturing cost savings can be achieved by coating larger substrates.

The apparatus shown in FIGS. 1 and 2 is also particularly suitable for the production of oxidation sensitive coatings, such as most metal coatings. To provide such a coating, fuel is supplied through conduit 44 proximate to the nebulized liquid medium and the coating precursor, while oxidant is supplied through conduit 52. The atomizing gas supplied through conduit 38 and / or the liquid medium supplied through conduit 22 may be a material having fuel availability, which may be a material that reacts with the coating precursor or may be an inert material. . When the resulting coating or coating precursor material is sensitive to oxygen, limit the total amount of oxidant supplied to an amount less than the amount necessary to completely burn the fuel provided to the reaction zone, i. Thereby maintaining a reducing atmosphere in the reaction and deposition zones. In general, the excess of fuel is limited to limit the flame zones generated when residual hot gas eventually mixes with atmospheric oxygen. When the resulting coatings and precursor materials are augmented by the presence of oxygen, such as in oxygen-resistant or in the manufacture of most oxide coatings, an oxidizing or neutral atmosphere in the reaction and deposition areas by supplying stoichiometric amounts or excess oxidants. May be provided. In addition, with respect to oxygen resistant reagents and products, the oxidant may be supplied through the inner conduit 44 while the fuel is supplied through the outer conduit 52.

The inert gas supplied through the conduit 60 must sufficiently shield the inner surface of the conduit from the reactive gas produced in the reaction zone and provide sufficient gas velocity in the barrier zone when added with other gases exiting the deposition zone. Should be.

Energy input can be achieved by mechanisms other than the combustion method illustrated in FIGS. 1 and 2. For example, a liquid medium / coating precursor could be achieved by mixing with a preheated fluid, such as an inert gas preheated to a temperature above 200 ° C. It is clear that not all conduits 22, 38, 44, 52 and 60 are necessary when energy input is achieved by combustion and other means. When energy input is provided by one of the non-combustion techniques, one or both of conduits 44 and 52 are typically omitted.

The porosity or density of the deposited coating can be modified by varying the distance between the flame and the deposition zone at the surface of the substrate. Shorter distances provide increased coating densities, while increasing distances provide more porous coatings. In the illustrated CACCVD technique, the reaction zone generally spans the same space as the flame generated by the combustion fuel. Of course, the flame zone and the substrate should be kept far enough apart so that the substrate is not damaged by the higher temperatures obtained when the flame zone approaches the substrate surface closer. The sensitivity of the substrate temperature varies from substrate material, but the temperature of the deposition zone at the substrate surface is typically at least 600 ° C. below the maximum flame temperature.

When some of the non-combustion methods are used for energy input, the maximum temperature present in the reaction zone is substantially lower than the temperature present when fuel is burned in the reaction zone. In this case, for example, when the main energy input is a preheated fluid mixed with the flowing stream in or before the reaction zone, the coating properties change the distance between the reaction zone and the substrate surface while reducing the concern about overheating of the substrate. Can be adjusted. In some cases a more dense coating obtained by reducing the distance between the reaction zone and the substrate is desirable to provide a reaction zone immediately adjacent to the substrate. Thus, the reaction zone and deposition zone are useful for defining the functional area of the device, but are not intended to define mutually exclusive areas, ie in some applications the reaction of the coating precursor may occur in the deposition zone at the substrate surface.

Energy input prior to leaving the reaction zone of the flowing stream generally denies the need to provide energy to the deposition zone by heating the substrate, as is sometimes required for other coating techniques. In the deposition system of the present invention, the substrate generally acts as a cooling heat sink, rather than heating the gas present in the deposition zone. Thus, the temperature applied to the substrate is substantially lower than that encountered in systems that require energy transfer through the substrate to the deposition area. Thus, the CACCVD coating process can be applied to many temperature sensitive substrate materials that could not have been previously coated by techniques associated with transferring heat through the substrate to the deposition area. Moreover, it extends over the substrate portion at elevated temperatures, which regulates the atmosphere to protect the substrate to the same extent that it protects the coating material, thereby enabling the coating of substrates sensitive to contamination, such as oxidation sensitive substrates.

The fluid medium may be a combustible liquid organic solvent or gas such as alkanes, alkenes or alcohols, may be an oxidizing agent or a pyrogenic material such as nitrous oxide (N ₂ O), or may be a non-combustible or flame retardant material such as water, carbon dioxide or ammonia. It may include.

Precursor materials for depositing metal layers are organic or inorganic compounds that can react to form reaction products that can deposit a coating on a substrate, including dissociation and ionization reactions. Precursor materials that dissociate with exothermic or otherwise react with exothermic are particularly suitable because the exothermic energy released in the reaction zone otherwise reduces the required energy input. The coating precursor may be supplied to the reaction zone as a liquid, gas or in part as a finely divided solid. When supplied as a gas, it can be entrained in a carrier gas. The carrier gas can be inert or can also act as a fuel.

When the precursor for the metal layer is supplied to the liquid medium, preferably, up to 50% of the coating precursor material may be present as fine particles in the liquid medium. However, it is desirable that the coating precursor material be completely dissolved in the liquid medium. Contamination of the coating precursor in the liquid medium is typically less than 0.1 M, preferably 0.0005 M to 0.05 M, which is compared with the concentration of coating precursor material required for the coating technology to supply the coating precursor to the coating operation in gaseous or vapor state. Relatively thin. Moreover, the metal layer precursor material does not need to have a relatively high vapor pressure as the precursor material of other coating techniques required to supply in gaseous or vapor phase. Precursors having a vapor pressure of less than 10 Torr at 300 ° C. may be used. Thus, a relatively wide range of precursor materials can be used in this technique, and many precursor materials are substantially cheaper than the relatively volatile materials required by other coating techniques.

A wide range of precursors can be used as gas, vapor or solution. It is preferable to use the cheapest precursor to obtain the desired form. Suitable chemical precursors for depositing various metals or metalloids include, but are not limited to:

Pt platinum-acetylacetonate [Pt (CH ₃ COCHCOCH ₃ ) ₂ ] (in toluene / methanol), platinum- (HFAC ₂ ), diphenyl- (1,5-cyclooctadiene) platinum (II) [Pt (COD ) Toluene-propane], platinum nitrate (in aqueous ammonium hydroxide solution)

Mg magnesium naphthenate, magnesium 2-ethylhexanoate [Mg (OOCCH (C ₂ H ₅ ) C ₄ H ₉ ) ₂ ], magnesium naphthenate, Mg-TMHD, Mg-acac, Mg-nitrate, Mg -2,4-pentadionate

Si tetraethoxysilane [Si (OC ₂ H ₅ ) ₄ ], tetramethylsilane, diselic acid, metasilic acid

P triethyl phosphate [(C ₂ H ₅ O) ₃ PO ₄ ], triethylphosphite, triphenyl phosphite

La lanthanum 2-ethylhexanoate [La (OOCCH (C ₂ H ₅ ) C ₄ H ₉ ) ₃ ] lanthanum nitrate [La (NO ₃ ) ₃ ], La-acac, La-isopropoxide, tris ( 2,2,6,6-tetramethyl-3,5-heptanedionato), lanthanum [La (C ₁₁ H ₁₉ O ₂ ) ₃ ]

Cr chromium nitrate [Cr (NO ₃ ) ₃ ], chromium 2-ethylhexanoate [Cr (OOCCH (C ₂ H ₅ ) C ₄ H ₉ ) ₃ ], Cr-sulfate, chromium carbonyl, chromium (III) Acetylacetonate

Ni nickel nitrate [Ni (NO ₃ ) ₂ ] (in aqueous ammonium hydroxide solution), Ni-acetylacetonate, Ni-2-atelhexanoate, Ni-naphthenol, Ni-dicarbonyl

Al aluminum nitrate [Al (NO ₃ ) ₃ ], aluminum acetylacetonate [Al (CH ₃ COCHCOCH ₃ ) ₃ ], triethyl aluminum, Al-s-butoxide, Al-i-propoxide, Al-2 Ethylhexanoate

Pb lead 2-ethylhexanoate [Pb (OOCH (C ₂ H ₅ ) C ₄ H ₉ ) ₂ ], lead naphthenate, Pb-TMHD, Pb-nitrate

Zr zirconium 2-ethylhexanoate [Zr (OOCCH (C ₂ H ₅ ) C ₄ H ₉ ) ₄ ], zirconium n-butoxide, zirconium (HFAC ₂ ), Zr-acetylacetonate, Zr-n-propanol , Zr-nitrate

Ba barium 2-ethylhexanoate [Ba (OOCCH (C ₂ H ₅ ) C ₄ H ₉ ) ₂ ], Ba-nitrate, Ba-acetylacetonate, Ba-TMHD

Nb niobium ethoxide, tetrakis (2,2,6,6-tetramethyl-3,5-heptanedionate) niobium

Ti titanium (IV) i-propoxide [Ti (OCH (CH ₃ ) ₂ ) ₄ ], titanium (IV) acetylacetonate, titanium-di-i-propoxide-bis-acetylacetonate, Ti-n -Butoxide, Ti-2-ethylhexanoate, Ti-oxide bis (acetylacetonate)

Y yttrium 2-ethylhexanoate [Y (OOCCH (C ₂ H ₅ ) C ₄ H ₉ ) ₃ ], Y-nitrate, Yi-propoxide, Y-naphthenoate

Sr strontium nitrate [Sr (NO ₃ ) ₂ ], strontium 2-ethylhexanoate, Sr (TMHD)

Co cobalt naphthenate, Co-carbonyl, Co-nitrate

Au chlorotriethylphosphine gold (I), chlorotriphenylphosphine gold (I)

B trimethylborate, B-trimethoxyboroxine

K potassium ethoxide, potassium t-butoxide, potassium 2,2,6,6-tetramethylheptan-3,5-dionate

Na sodium 2,2,6,6-tetramethylheptan-3,5-dionate, sodium ethoxide, sodium t-butoxide

Li lithium 2,2,6,6-tetramethylheptane-3,5-dionate, lithium ethoxide lithium-t-butoxide

Cu Cu (2-ethylhexonate) ₂ , Cu-nitrate, Cu-acetylacetonate

Pd palladium nitrate (in aqueous ammonium hydroxide solution) (NH ₄ ) ₂ Pd (NO ₂ ) ₂ , Pd-acetylacetonate, ammonium hexochloropalladium

Ir H ₂ IrCl ₆ (in 50% ethanol in aqueous solution), Ir-acetylacetonate, Ir-carbonyl

Ag silver nitrate (in water), silver nitrate, silver fluoroacetic acid, silver acetate, Ag-cyclohexanebutyrate, Ag-2-ethylhexanoate

Cd Cadmium Nitrate (in water), Cd-2-ethylhexanoate

Nb niobium (2-ethylhexanoate)

Mo (NH ₄ ) ₆ Mo ₇ O ₂₄ , Mo (CO) ₆ , Mo-dioxide bis (acetylacetonate)

Fe Fe (NO ₃ ) ₃ 9H ₂ O, Fe-acetylacetonate

Sn SnCl ₂ · 2H ₂ O, Sn-2-ethylhexanoate, Sn-tetra-n-butyltin, Sn-tetramethyl

In In (NO ₃ ) ₃ x H ₂ O, In-acetylacetonate

Bi Bismuth Nitrate, Bismuth 2-ethyl Hexonate

Ru Ru-acetylacetonate

Zn Zn-2-ethyl hexonate, Zn nitrate, Zn acetate

W W-hexacarbonyl, W-hexafluoride, tungstic acid

Ce Ce-2-ethyl hexonate

Many of the metals and metalloids listed above would not be suitable for forming an electrically conductive layer, but some elements could be coprecipitated with the major metals in small proportions to affect electrical, mechanical or adhesive properties. Precursors of two or more metals may be mixed to deposit the alloy.

In accordance with the present invention, as shown in FIG. 3, a thin, electrically conductive, non-porous, continuous, and uniform metal layer 110 is deposited on the transfer substrate 112 to transfer the transfer stack 114. ). When the metal layer is bonded to a resin having a greater metal adhesion than the transfer substrate 112, the adhesion to the metal layer 110 is low enough that the substrate 112 can peel off. It is the main condition. The adhesion of the substrate 112 to the metal layer is preferably about 1/2 lbs / in ² to about 2 lbs / in ² . A preferred substrate 112 for the deposition of copper layer 110 in accordance with the present invention is aluminum foil. The adhesion of the copper layer 110 to the aluminum foil substrate 112 is measured between 1 and 1.2 lbs / in ² . In addition, the substrate must have sufficient temperature stability to withstand coating conditions, in particular temperature. The transfer substrate 112 is generally a film or foil that can be rolled up for shipping and storage with the deposited metal layer, but the transfer substrate 112 must have sufficient rigidity to support the metal layer thereon before adhering to the resin. Typical aluminum foils used as transfer substrate 112 are about 50 microns thick.

The metal layer 110 may be deposited on the transfer substrate 112 to a desired thickness by CCVD or CACCVD, but according to the present invention the metal layer is deposited from about 0.1 to about 3 microns, preferably from about 0.5 to about 2 microns. The metal layer is typically applied at a rate of 0.1 to 500 milligrams / minute per coating head, preferably at a rate of 0.5 to 2.0 milligrams / minute per coating head.

In CACCVD, the substrate temperature is generally kept below 600 ° C., preferably below 400 ° C., and the substrate can be kept below 200 ° C. when it is necessary to prevent harmful effects on the substrate or other components. . When coating a substrate that is more sensitive to temperature, embodiments of the present invention that use non-combustible energy inputs, such as heated fluid, radiation, or microwave energy, are preferred. The substrate may cool the substrate by directing an oil of inert cooling fluid, preferably gas, to a surface remote from the deposition area, such as the surface opposite the surface exposed to the deposition delay. The process of the invention is also particularly suitable for coating substrates, such as substrates which are susceptible to oxidation, when they are heated which can carry out unwanted reactions with the atmospheric components. Both the lower temperature applied to the substrate and the controlled atmosphere around the deposition area contribute to minimizing the unwanted reaction of the substrate with the atmospheric components.

It is generally desirable to carry out the CACCVD coating process necessarily at ambient or atmospheric pressure; Sometimes it may be useful to adjust the combustion flame temperature or other variables by adjusting the combustion pressure. The combustion flame can be maintained at a pressure as low as 10 Torr. Particularly when combustion flames and other energy sources are used, the greatest advantage of cost and manufacturing is generally achieved by operating at ambient and higher pressures.

4 shows two transfer stacks 114 bonded to uncured or partially cured dielectric resin material 116 to form a two-sided circuit board blank structure. The dielectric material can be selected from various materials, such as free standing epoxy, FR epoxy, prepreg, polyimide, cyanate ester, or liquid crystal polymer, through conventional lamination methods. In a typical stacking method, the transfer stack 114 is in contact with the dielectric material under heating and pressurization until the dielectric resin material is fully cured, thereby providing a firm bond between the metal layer 110 and the dielectric resin material 116. Is formed. The adhesion between the dielectric resin material 116 and the metal layer 110 needs to be greater than the adhesion between the metal layer 110 and the deposition substrate 112. The adhesion between the transfer substrate 112 and the metal layer is typically from about 1/2 to about 2 lbs / in ² , generally less than about 1.5 lbs / in ² . Preferably the adhesion between metal layer 110 and resin material 116 is greater than about 5 lbs / in ² , preferably greater than about 9 lbs / in ² . In comparison, the adhesion between the resin material 116 and the metal layer 110 is at least about 3 lbs / in ² , preferably at least about 6 lbs / in ² , which is greater than or equal to the adhesion between the metal layer 110 and the transfer substrate 112. Should be This causes the transfer substrate 112 to peel off from the metal layer 110 as shown in FIG. 5.

The adhesion between the metal layer 110 and the resin material 116 depends not only on the composition of the two materials but also on the smoothness or roughness of the metal layer (on the opposite surface of the transfer substrate 112). In deposition by CCVD or CACCVD, the metal layer can be deposited to have a smooth and very rough range of surface; Thus, the desired surface roughness can be easily obtained by changing the deposition parameters for good adhesion to the resin material 116. Such deposition parameters that may vary include temperature, carrier liquid, precursor compound, precursor concentration, flow rate, and the like. Since a wide range of materials can be deposited by CCVD or CACCVD, specific conditions for obtaining the desired surface roughness must be determined experimentally; Different deposition parameters and determining when the desired surface roughness is obtained is readily within the skill of one of ordinary skill in the art. The ability to produce transfer laminates of controlled surface roughness is comparable to other methods of forming transfer laminates, such as those described in US Pat. Nos. 3,969,199, 4,431,710, 4,357,395, 5,322,975 and 5,418,002. One of the advantages of the present invention.

The processing of the metal layer forming the printed circuit board is performed in a conventional manner, such as by "pattern plating" or "printing and etching" described above.

6A-E illustrate a method of forming a thin film resistor by the transfer method of the present invention. On the support 201, for example aluminum, a conductive material layer 202, for example copper, is deposited by CCVD or CACCVD, and the resistive material layer 203 by CCVD, for example, the US patent. As described in Application 09 / 198,954, silica-doped platinum is deposited to provide the structure of FIG. 6A. Generally, the resistive layer is about 0.1 to about 0.75 microns thick, preferably about 0.1 to about 0.2 microns thick.

As described in reference patent application 09 / 198,954, silica-doped platinum is porous and can be patterned by an ablative etching technique. Silica-doped platinum is coated with a photoresist that is exposed and developed to patterned radiation. The silica-doped platinum is then exposed to an etchant for copper. The etchant spreads throughout the silica-doped platinum layer and breaks down the interface between the copper layer 202 and the silica-doped platinum layer 203. Etching is stopped before the copper layer 203 decomposes in significant amounts. This produces a resist patch 204 (FIG. 6B). Although only one such patch is shown, a plurality of resistor patches will be made.

As shown in FIG. 6C, an uncured dielectric material, such as a fiberglass / epoxy “prepreg” 205, is embedded with a resist patch 204, and the prepreg is cured. The cured prepreg provides the support for the laminate during subsequent processing. The aluminum foil support 201 appears to be peeled from the copper layer 202 in FIG. 6C.

Next, the copper layer 202 is covered with the photoresist pattern 206 (FIG. 6D) and the copper electrical contacts 207 are electroplated thereon. The resist is stripped (Figure 6E). The copper layer 202 is then removed by rapid etching with, for example, iron chloride, leaving the electrical connections 207 at the opposite ends of the resist patch 204. Typically this structure will be embedded in the prepreg of the additional layer (not shown).

Similar methods are used to form the capacitors shown in FIGS. 7A-E. 7A shows an aluminum support 301 in which copper layer 302, a silica layer, and another copper layer 304 are successively deposited. The dielectric (silica) layer is typically about 0.1 to about 0.75 microns thick, preferably about 0.1 to about 0.25 microns thick. A patterned photoresist pattern 305 is formed on the copper layer 304 (FIG. 7B), and the copper of the portion where the copper capacitor plate 306 (two are shown) is not covered with the photoresist pattern 305 Electrodeposited on layer 304. The photoresist 305 is stripped away to produce the structure of FIG. 7C, and the copper layer 304 is removed by rapid etching to separate the capacitor plate 306 in contact with the dielectric layer 303 as shown in FIG. 7D. Leaves. The capacitor plate 306 is buried in the prepreg 307 and the copper foil 301 is peeled off when the prepreg is cured. The circuitry process of the copper layer 304 is repeated with the copper layer 302 to create the capacitor plate 306 on the other side of the dielectric layer 303. It is buried in the shave prepreg 307.

The invention will be described in more detail by way of specific examples.

Example 1 Nickel Coating on Polyimide Substrates

Nickel films were deposited on polyimide substrates in the device shown in FIG. 1. A 0.0688 M Ni (NO ₃ ) ₂ solution in 1.20 M NH ₄ OH was fed through a 75 μm ID joint silica capillary tube 22 at a flow rate of 0.25 sccm (standard cubic centimeter / minute). Hydrogen was supplied at 1.20 lpm (standard liters / minute) via atomization conduit 38 and at 756 sccm via conduit 44. Oxygen was supplied at 1.40 lpm through conduit 52. Argon was fed at 28.1 lpm through conduit 68, with an inner diameter of 5/8 inch. The argon oil was reduced to ignite the manual flame and then returned to the initial setting. Once ignited, no pilot or other ignition source was required to maintain the ignition state. The gas temperature was 600 ° C. about 1 mm above the deposition point. Nozzle collar 64 at 20 inches / minute with substrate traversing 0.0625 inch stepping twice with 4 " x4 " area (once with horizontal sweeps and then once with vertical sweeps) Raster at 2 mm. The total time required for the rastering exercise was 16 minutes. Nickel was deposited to an average thickness of about 0.1 micron.

Example 2 Copper Coating on Aluminum Foil

Copper was deposited from a 0.0350 M solution of copper (II) bis (2-ethylhexanoate) in anhydrous ethyl ether. The solution was also sprayed at 1.00 sccm into a tube fed with 40 lpm of a preheated 500 ° C. 10% H ₂ / Ar gas mixture. Inject at about 5 cm from the tube outlet. The substrate was positioned perpendicular to the gas flow at about 2 mm from the tube outlet. This method deposited a 1.5 micron metal copper coating on a 50 micron aluminum foil.

Example 3 Platinum Coatings on Polyimide Substrates

A platinum film was deposited on the polyimide in the device shown in FIG. A capillary tube 22 was supplied with a solution of 5.3 mM (NH ₃ ) ₂ Pt (NO ₂ ) _{2 in} 1.20 M NH ₄ OH at 0.25 sccm. Argon was fed at 1.60 lpm through conduit 18. Hydrogen was supplied at 1.6 lpm through conduit 44. Oxygen was fed at 800 sccm through conduit 52. Argon was supplied at 28.1 lpm through conduit 68. The gas temperature was 400 ° C. above about 1 mm of the deposition point. The substrate was rastered three times at 2 mm from the nozzle collar 64 over a 6 "x 6" area (two horizontal sweeps followed by one vertical sweep). A 3 micron platinum coating was prepared.

Example 4 Nickel Coating on Polyimide Substrates

Nickel films were deposited on the polyimide substrate in the apparatus of FIG. 1. A solution of 25.0 g of H ₂ O and 2.00 g of Ni (NO ₃ ) ₂ .6H ₂ O in 180 g of NH _{3 (L) was} removed from a 300 cc pressurized container with a 20 μm ID joint silica capillary insert at the end of 22 ga. Feed at 0.25 sccm through stainless steel needle. Hydrogen was passed through conduits 38 and 44 at a flow rate of 1.20 lpm and 756 sccm, respectively. Oxygen was supplied at 1.20 lpm through conduit 52. Argon was supplied at 28.1 lpm through conduit 68. The gas temperature was 600 ° C. above about 1 mm of the deposition point. The substrate was rastered twice for 16 minutes at a distance of about 2 mm from the nozzle collar 64 over a 4 "x 4" area. Nickel coatings with an average thickness of 0.1 micron were deposited.

Claims (21)

Providing a transfer substrate exhibiting a relatively low adhesion to the metal layer to be deposited, Depositing a metal layer on the transfer substrate to a thickness of about 0.1 to about 3 microns by combustion chemical vapor deposition or controlled atmoshphere combustion chemical vapor deposition; Providing a dielectric substrate to attach the deposited metal layer to the dielectric substrate to obtain a high adhesion relative to the adhesion between the deposited substrate and the metal layer, Removing the transfer substrate from the metal layer, thereby producing a blank for a printed circuit board having a dielectric substrate and a metal layer of at least about 0.1 to about 3 microns thick on at least one side of the substrate. The method of claim 1, wherein the deposited metal layer is attached to both sides of the dielectric substrate. The method of claim 1, wherein the metal layer is deposited to have as / deposited surface roughness (roughness sufficient to increase adhesion to the dielectric substrate) as deposited on the substrate opposite surface. The method of claim 1 wherein the adhesion obtained between the rough surface of the deposited metal layer and the dielectric substrate is at least about 5 lbs / in ² . The method of claim 1 wherein the deposited metal is copper. The method of claim 1 wherein the deposited metal is nickel. The method of claim 1 wherein the deposited metal is platinum. The method of claim 1 wherein the deposited metal is selected from the group consisting of silver, gold, tin, and zinc. The method of claim 1 wherein the transfer substrate is aluminum foil. The method of claim 1 wherein the deposition substrate is a polyimide film. The method of claim 1, wherein the adhesion between the deposited metal layer and the transfer substrate is about 1.5 lbs / in ² or less. The method of claim 1 wherein the adhesion obtained between the deposited metal layer and the dielectric substrate is at least about 5 lbs / in ² . The method of claim 1, wherein the adhesion obtained between the deposited metal layer and the dielectric substrate is at least about 3 lbs / in ² greater than the adhesion between the transfer substrate and the deposited metal layer. A transfer laminate for providing a thin metal layer to a dielectric substrate, the transfer laminate comprising a flexible transfer substrate and a metal layer about 0.1 to about 3 microns thick detachably attached to the flexible transfer substrate, the metal layer being A transfer laminate having the same surface roughness as deposited on the opposite side of the dielectric substrate, sufficient to facilitate subsequent adhesion to the dielectric substrate. 15. The transfer laminate of claim 14, wherein the metal layer is copper. 15. The transfer laminate of claim 14, wherein the transfer substrate is aluminum foil. 15. The transfer laminate of claim 14, wherein the adhesion between the transfer substrate and the metal layer is from about 1/2 to about 2 lbs / in ² . Providing a thin metal layer to the dielectric substrate comprising a flexible transfer substrate, a metal layer about 0.1 to about 3 microns thick detachably attached to the flexible transfer substrate, and a layer of dielectric material about 0.1 to about 0.75 microns thick attached to the metal layer Transfer laminated body for making. Providing a thin metal layer to the dielectric substrate comprising a flexible transfer substrate, a metal layer about 0.1 to about 3 microns thick detachably attached to the flexible transfer substrate, and a layer of resistive material about 0.1 to about 0.75 microns thick attached to the metal layer Transfer laminated body for making. Depositing the electrically conductive layer on the support substrate such that the electrically conductive layer has a weak enough adhesive force to peel the support substrate from the conductive layer with respect to the support substrate, Depositing an electrically resistive material layer on the conductive layer, Patterning the resistive material layer to provide at least one patch of resistive material, Apply a resist patch to the laminate-supporting dielectric material, After peeling the support substrate from the conductive layer, Forming a thin film resistor, characterized by removing a portion of the conductive layer over the patch of resistive material to form an electrical contact from the conducting layer opposite the patch on the resistive material and to define an electrically conductive patch between the contacts via the resistive patch. How to. Depositing the first electrically conductive layer on the support substrate such that the first electrically conductive layer has a weak enough adhesive force to peel the support substrate from the first conductive layer against the support substrate, Depositing a dielectric layer on the conductive layer, Depositing a second conductive layer on the dielectric material layer, From the second electrically conductive layer, at least one capacitor plate is formed, A capacitor plate formed from the second conductive layer is embedded in the laminate-supporting dielectric material, The support substrate is peeled off from the first conductive layer, and then Forming at least one capacitor plate (s) from the first electrically conductive layer.