KR20020044287A - Liquid crystal display device - Google Patents

Liquid crystal display device Download PDF

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Publication number
KR20020044287A
KR20020044287A KR1020000073312A KR20000073312A KR20020044287A KR 20020044287 A KR20020044287 A KR 20020044287A KR 1020000073312 A KR1020000073312 A KR 1020000073312A KR 20000073312 A KR20000073312 A KR 20000073312A KR 20020044287 A KR20020044287 A KR 20020044287A
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South Korea
Prior art keywords
tft
liquid crystal
ito
crystal display
display device
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KR1020000073312A
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Korean (ko)
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KR100658071B1 (en
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이경하
김정근
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주식회사 현대 디스플레이 테크놀로지
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0257—Reduction of after-image effects

Abstract

PURPOSE: A liquid crystal display is provided to reduce probability of generation of residual images and to prevent signal lines from short-circuiting. CONSTITUTION: A liquid crystal display includes a TFT part(A) serving as a switching element, a pixel and storage part(B) formed of the first ITO and the second ITO, and a signal line part(C) for transmitting a data signal to the TFT. The source and drain(48) of the TFT is formed of the second ITO. A metal layer for forming the source and drain is formed when a contact hole of the TFT is fabricated. The source and drain of the TFT are applied as a compensation line and a pixel electrode. The source and drain are floated on the TFT part to prevent optical leakage current.

Description

액정표시장치{LIQUID CRYSTAL DISPLAY DEVICE}Liquid crystal display {LIQUID CRYSTAL DISPLAY DEVICE}

본 발명은 액정표시장치에 관한 것으로, 보다 상세하게는 FFS(Fringe Field Switch)모드-액정표시장치(Liquid Crystal Display Device;LCD)에서 신호배선의 단락방지 및 잔상특성이 개선되도록 설계한 액정표시장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device designed to improve short-circuit prevention and afterimage characteristics of signal wiring in a FFS (Liquid Crystal Display Device) liquid crystal display device (LCD). It is about.

현재, 액정의 배열방향을 변경하여 광의 투과율을 조절함으로써 화상을 재현하는 액정표시장치의 일종으로서 보다 양호한 시야각과 대형화의 가능성을 제시하는 FFS모드의 LCD가 알려진 상태이다.At present, the LCD of the FFS mode which presents a better viewing angle and the possibility of enlargement as a kind of liquid crystal display device which reproduces an image by changing the arrangement direction of liquid crystal and adjusting the light transmittance is known.

도 1은 그 FFS모드 LCD의 평면구조를 나타낸 도면으로, 글래스기판(10)에는 스토리지(Storage) 및 하부전극으로서 제 1 ITO(Indium Tin Oxide)에 의해 형성되는 공통전극(12)이 형성되고, 그 LCD에 의해 형성되는 화소의 작동을 스위칭하기 위한 TFT(Thin Film Transistor)소자(14)가 형성되며, 그 TFT소자(14)의 게이트전극이 접속되어 게이트구동신호가 인가되는 게이트배선(16)이 형성된다.1 illustrates a planar structure of the FFS mode LCD. The glass substrate 10 is formed with a common electrode 12 formed by first indium tin oxide (ITO) as storage and a lower electrode. A TFT (Thin Film Transistor) element 14 for switching the operation of the pixel formed by the LCD is formed, and the gate wiring 16 to which the gate electrode of the TFT element 14 is connected and to which a gate drive signal is applied is formed. Is formed.

또, 그 FFS모드 LCD에는 상기 제 1 ITO전극으로서의 공통전극(12)과 대향 작용을 행하는 제 2 ITO전극으로서의 화소전극(18)도 형성되고, 상기 TFT소자(14)의 소오스에 그래픽데이터신호를 인가하기 위한 신호배선(20) 및 상기 공통전극(12)이 연결되는 공통배선(22)도 갖추어지게 된다.In the FFS mode LCD, a pixel electrode 18 serving as a second ITO electrode which opposes the common electrode 12 serving as the first ITO electrode is also formed, and a graphic data signal is applied to the source of the TFT element 14. The signal wiring 20 for applying and the common wiring 22 to which the common electrode 12 is connected are also provided.

상기한 구성의 FFS모드 LCD는 상기 공통전극(12)의 상부에서 제 2의 ITO전극(즉, 화소전극)(18)이 액정에 전위차를 유발하여 음의 액정이 회전하도록 해서 편광판을 통과하면서 진행되는 광이 그 액정을 통과하도록 하여 화상의 재현을 실행하도록 구성되고, 그러한 점에서 그 FFS모드의 액정표시장치는 IPS모드라든지 TN모드의 TFT-LCD에 비해 우수한 시야각을 제공하게 된다.In the FFS mode LCD having the above-described configuration, the second ITO electrode (i.e., pixel electrode) 18 causes the potential difference to occur in the liquid crystal on the upper part of the common electrode 12 so that the negative liquid crystal rotates and passes through the polarizing plate. The light to be passed through the liquid crystal is configured to perform image reproduction, and in that respect, the FFS mode liquid crystal display device provides an excellent viewing angle compared with the TFT-LCD in IPS mode or TN mode.

그러나, 상기한 구조의 FFS모드 LCD는 BCE TFT공정(5-마스크)으로 인한 BOE, ITO에칭제에 의한 악영향(Attack) 등에 의해 신호배선의 단락이 높게 발생되고, 그에 따라 LCD의 제조 수율이 저하된다.However, in the FFS mode LCD having the above-described structure, short circuit of signal wiring occurs due to bad effects caused by BOE and ITO etching agent due to the BCE TFT process (5-mask), and thus the manufacturing yield of the LCD decreases. do.

따라서, 본 발명은 상기한 종래 기술을 감안하여 이루어진 것으로, FFS모드에서 소오스/드레인을 ITO로 형성하여 패터닝하고나서 n+에칭을 수행하고 접촉공에칭시 TFT부의 접촉성을 향상시키기 위해 금속막을 증착하고 신호배선을 형성하여 에칭액에 의한 불리한 영향을 방지하도록 된 액정표시장치를 제공하는 것이다.Accordingly, the present invention has been made in view of the above-described prior art, and in the FFS mode, the source / drain is formed by ITO and patterned, followed by n + etching, and the deposition of a metal film to improve the contactability of the TFT portion during contact hole etching. The present invention provides a liquid crystal display device in which signal wiring is formed to prevent adverse effects caused by etching liquid.

상기한 목적을 달성하기 위해, 본 발명의 바람직한 실시예에 따르면 스위칭소자로서의 TFT(Thin Film Transistor)부와, 스토리지 및 공통전극으로서 형성되는 제 1 및 제 2 ITO(Indium Tin Oxide)를 포함하는 화소 및 스토리지부, 데이터신호를 상기 TFT부에 전달하는 신호배선부를 갖추어 구성된 액정표시장치에 있어서, 상기 TFT부의 소오스/드레인(S/D)은 제 2 ITO의 형성에 적용된 ITO로 형성되고, 상기 TFT부의 접촉공의 형성시 S/D금속층이 형성된 액정표시장치가 제공된다.In order to achieve the above object, according to a preferred embodiment of the present invention, a pixel including a thin film transistor (TFT) portion as a switching element, and first and second indium tin oxide (ITO) formed as storage and a common electrode. And a storage portion and a signal wiring portion for transferring a data signal to the TFT, wherein the source / drain (S / D) of the TFT portion is formed of ITO applied to the formation of the second ITO, and the TFT A liquid crystal display device in which an S / D metal layer is formed when forming negative contact holes is provided.

상기 ITO로 형성된 상기 TFT부의 소오스/드레인은 보상라인 및 화소전극으로도 적용된다.The source / drain of the TFT portion formed of the ITO is also applied to the compensation line and the pixel electrode.

또, 상기 TFT부의 상측에는 부유된 형태로 S/D금속이 위치되어 광누설전류를 방지하게 된다.In addition, the S / D metal is positioned in a floating form on the upper side of the TFT to prevent the light leakage current.

상기 TFT부에 접촉공을 형성하여 S/D금속층이 상기 ITO의 내측에 위치되도록 하게 된다.A contact hole is formed in the TFT so that the S / D metal layer is positioned inside the ITO.

상기한 본 발명에 따른 액정표시장치에 의하면, 상기 TFT부의 소오스/드레인(S/D)은 제 2 ITO의 형성에 적용된 ITO로 형성되고, 상기 TFT부의 접촉공의 형성시 S/D금속층이 형성된다. 또, 상기 ITO로 형성된 상기 TFT부의 소오스/드레인은 보상라인 및 화소전극으로도 적용된다.According to the liquid crystal display device according to the present invention, the source / drain (S / D) of the TFT part is formed of ITO applied to the formation of the second ITO, and the S / D metal layer is formed when the contact hole of the TFT part is formed. do. The source / drain of the TFT portion formed of the ITO is also applied to the compensation line and the pixel electrode.

그에 대해, 상기 TFT부의 상측에는 부유된 형태로 S/D금속이 위치되어 광누설전류를 방지하게 되며, 상기 TFT부에 접촉공을 형성하여 S/D금속층이 상기 ITO의 내측에 위치되도록 하게 된다.On the other hand, the S / D metal is positioned above the TFT to prevent photo leakage current, and a contact hole is formed in the TFT so that the S / D metal layer is positioned inside the ITO. .

도 1은 종래의 FFS모드 액정표시장치의 평면도,1 is a plan view of a conventional FFS mode liquid crystal display device;

도 2는 본 발명의 제 1실시예에 따른 액정표시장치의 단면구조를 나타낸 도면,2 is a cross-sectional view of a liquid crystal display device according to a first embodiment of the present invention;

도 3은 도 2에 도시된 본 발명의 제 1실시예에 따른 액정표시장치의 평면도,3 is a plan view of a liquid crystal display according to a first embodiment of the present invention shown in FIG.

도 4는 도 3에 도시된 액정표시장치의 요부를 나타낸 도면,4 is a view illustrating a main part of the liquid crystal display shown in FIG. 3;

도 5는 본 발명의 제 2실시예에 따른 액정표시장치의 요부를 나타낸 도면,5 is a view illustrating a main part of a liquid crystal display according to a second embodiment of the present invention;

도 6은 본 발명의 제 3실시예에 따른 액정표시장치의 단면구조를 나타낸 도면,6 is a cross-sectional view of a liquid crystal display device according to a third embodiment of the present invention;

도 7은 도 6에 도시된 본 발명의 제 3실시예에 따른 액정표시장치의 요부를 나타낸 도면,FIG. 7 illustrates a main part of a liquid crystal display according to a third exemplary embodiment of the present invention shown in FIG. 6;

도 8은 본 발명의 제 4실시예에 따른 액정표시장치의 단면구조를 나타낸 도면이다.8 is a cross-sectional view of a liquid crystal display device according to a fourth embodiment of the present invention.

*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

30: 글래스기판, 32: 게이트,30: glass substrate, 32: gate,

34: 제 1 ITO, 40: 활성층,34: first ITO, 40: active layer,

42: 보호층, 44: 공통배선,42: protective layer, 44: common wiring,

48: 소오스/드레인.48: source / drain.

이하, 본 발명에 대해 첨부도면을 참조하여 상세하게 설명한다.Hereinafter, with reference to the accompanying drawings, the present invention will be described in detail.

도 2는 본 발명의 바람직한 제 1실시예에 따른 액정표시장치의 단면구조를 나타낸 도면이고, 도 3은 도 2에 도시된 본 발명의 제 1실시예에 따른 액정표시장치의 평면도이며, 도 4는 본 발명의 제 1실시예에 따른 액정표시장치의 요부를 설명하는 평단면도이다.FIG. 2 is a cross-sectional view of a liquid crystal display device according to a first embodiment of the present invention. FIG. 3 is a plan view of the liquid crystal display device according to the first embodiment of the present invention shown in FIG. Is a plan sectional view for explaining the main part of the liquid crystal display device according to the first embodiment of the present invention.

본 발명에 따르면, 글래스기판(30)상에는 게이트(32)가 형성됨과 더불어 제 1 ITO(34) 및 공통전극(36)이 형성되고, 그 전체 면에는 절연막(38)이 형성된다.According to the present invention, the gate 32 is formed on the glass substrate 30, the first ITO 34 and the common electrode 36 are formed, and the insulating film 38 is formed on the entire surface thereof.

또, TFT부(A)에서 상기 절연막(38)상에는 활성층(40)이 형성됨과 더불어 그상측에는 접촉공(42a)이 형성된 상태로 제 2 ITO(42)가 형성된다.In the TFT portion A, the second ITO 42 is formed with the active layer 40 formed on the insulating film 38 and the contact hole 42a formed thereon.

여기서, 상기 제 2 ITO(42)는 화소 및 스토리지부(B)에도 형성됨과 더불어 신호배선부(C)에서 신호배선(44)상에도 형성된다.Here, the second ITO 42 is formed on the pixel and the storage unit B, and is also formed on the signal wiring 44 in the signal wiring unit C.

그리고, 상기 전체 면에는 보호층(46)이 형성되며, 상기 TFT부(A)의 최상층에는 소오스/드레인(48)이 형성된다.A protective layer 46 is formed on the entire surface, and a source / drain 48 is formed on the uppermost layer of the TFT portion A.

상기한 본 발명의 제 1실시예의 액정표시장치에서는 소오스/드레인(48)을 형성하는 공정에서 소오스/드레인금속을 대신하여 ITO에 의해 공정을 진행하고 그 소오스/드레인의 패터닝형성 및 n+에칭을 수행하게 된다.In the liquid crystal display of the first embodiment of the present invention described above, the process is performed by ITO instead of the source / drain metal in the process of forming the source / drain 48, and patterning and n + etching of the source / drain are performed. Done.

또, 접촉공(42a)의 에칭형성시 상기 TFT부(A)의 접촉을 향상시키기 위해 금속층을 증착하고 신호배선을 형성하게 된다.In the etching formation of the contact hole 42a, a metal layer is deposited and signal wirings are formed to improve the contact between the TFTs A. FIG.

여기서, 상기 소오스/드레인(48)에 적용된 ITO는 보상용 배선으로 적용가능하면서 화소전극으로서도 사용된다.Here, the ITO applied to the source / drain 48 is applicable to the compensation wiring and is also used as the pixel electrode.

따라서, 화소전극으로의 원활한 전류수송이 ITO와 최상부층의 금속층으로 구성되고, 그러한 금속은 에칭제에 의한 부식이 초래되지 않기 때문에 알루미늄-합금계열의 재료를 자유롭게 적용할 수 있게 된다.Therefore, smooth current transport to the pixel electrode is composed of the ITO and the metal layer of the uppermost layer, and since such metal does not cause corrosion by the etchant, the aluminum-alloy series material can be freely applied.

또, 본 발명은 투명전극을 상기 소오스/드레인(48)으로 적용하고 접촉공(42a)을 통한 저저항 금속층을 상부에 위치시키기 때문에 상판의 컬러필터측의 반사광의 차단이 가능하여 누설전류의 감소가 가능하게 된다.In addition, in the present invention, since the transparent electrode is applied to the source / drain 48 and the low-resistance metal layer through the contact hole 42a is positioned on the upper side, it is possible to block the reflected light on the color filter side of the upper plate, thereby reducing leakage current. Becomes possible.

도 5는 본 발명의 제 2실시예에 따른 액정표시장치의 요부를 나타낸 도면으로, 본 실시예는 상기한 실시예에서 TFT부(A)의 상부에 부유(Floating)된 소오스/드레인 금속을 위치시킴으로써 광누설전류의 방지가 가능하게 된다.FIG. 5 is a view showing a main part of a liquid crystal display according to a second embodiment of the present invention. In this embodiment, a floating source / drain metal is positioned above the TFT part A in the above-described embodiment. As a result, the light leakage current can be prevented.

도 6은 본 발명의 제 3실시예에 따른 액정표시장치의 단면구조를 나타낸 도면이고, 도 7은 도 6에 도시된 액정표시장치의 요부를 나타낸 도면이다.6 is a cross-sectional view of a liquid crystal display device according to a third exemplary embodiment of the present invention, and FIG. 7 is a view showing main parts of the liquid crystal display device shown in FIG.

본 실시예에서는 TFT부(A)에 접촉공(42a')을 형성하여 소오스/드레인 금속을 ITO의 내측에 위치시킴으로써 상기 TFT부(A)의 온-전류(On-current)를 향상시키게 된다.In this embodiment, the contact hole 42a 'is formed in the TFT portion A, so that the source / drain metal is positioned inside the ITO to improve the on-current of the TFT portion A.

도 8은 본 발명의 제 4실시예에 따른 액정표시장치의 단면구조를 나타낸 도면으로, 본 실시예에서는 화소전극사이의 보호층 및 게이트절연막을 제거함으로써 스트레스에 의한 보호층의 열화성 잔상 요인을 감소시킬 수 있게 된다.8 is a cross-sectional view of a liquid crystal display device according to a fourth embodiment of the present invention. In this embodiment, the deterioration afterimage factor of the protective layer due to stress is removed by removing the protective layer and the gate insulating layer between the pixel electrodes. Can be reduced.

상기한 바와 같이, 본 발명에 따른 액정표시장치에 의하면, 제 2 ITO전극이 게이트절연막의 상부에 위치됨으로써 잔상의 발생가능성이 현저하게 감소되고, TFT부에 입사되는 컬러필터 반사광에 대한 차단구조의 제공이 가능하게 된다.As described above, according to the liquid crystal display device according to the present invention, since the second ITO electrode is positioned on the gate insulating film, the possibility of the afterimage is remarkably reduced, and the blocking structure for the color filter reflected light incident on the TFT portion is reduced. Provision is possible.

또, TFT부에서 ITO S/D와 금속 S/D의 보강에 의해 TFT부의 결점을 보상할 수 있게 되고, 상기 보호층의 노출이 가능하게 되어 FFS모드에서 잔상 결점을 감소시킬 수 있게 된다. 특히, 신호배선을 조정하여 자생적으로 유발되는 기생용량을 순환시킬 수 있는 회로를 부가적으로 만들 수 있게 된다.In addition, by reinforcing the ITO S / D and the metal S / D in the TFT portion, the defects in the TFT portion can be compensated for, and the protective layer can be exposed to reduce the afterimage defects in the FFS mode. In particular, it is possible to additionally make a circuit capable of circulating parasitic capacitance induced by adjusting signal wiring.

그리고, 화소전극사이의 보호층 및 게이트절연막을 제거함으로써 스트레스에 의한 보호층의 열화성 잔상요인을 감소시킬 수 있게 되고, 신호배선은 ITO에칭시 발생되는 화학적 불리함 등에 의한 신호배선을 방지할 수 있게 되며, 게이트배선이알루미늄-합금이 적용되는 경우에는 게이트단락도 방지할 수 있게 된다.By removing the protective layer and the gate insulating layer between the pixel electrodes, the deterioration factor of deterioration of the protective layer due to stress can be reduced, and the signal wiring can prevent signal wiring due to chemical disadvantages generated during ITO etching. If the gate wiring is aluminum-alloy is applied, the gate short circuit can be prevented.

Claims (4)

스위칭소자로서의 TFT(Thin Film Transistor)부와, 스토리지 및 공통전극으로서 형성되는 제 1 및 제 2 ITO(Indium Tin Oxide)를 포함하는 화소 및 스토리지부, 데이터신호를 상기 TFT부에 전달하는 신호배선부를 갖추어 구성된 액정표시장치에 있어서,A TFT and a storage unit including a thin film transistor (TFT) unit as a switching element, first and second indium tin oxide (ITO) formed as storage and a common electrode, and a signal wiring unit for transferring a data signal to the TFT In the liquid crystal display device provided, 상기 TFT부의 소오스/드레인(S/D)은 제 2 ITO의 형성에 적용된 ITO로 형성되고,The source / drain (S / D) of the TFT portion is formed of ITO applied to the formation of the second ITO, 상기 TFT부의 접촉공의 형성시 S/D금속층이 형성되는 것을 특징으로 하는 액정표시장치.And a S / D metal layer is formed when the contact hole of the TFT is formed. 제 1항에 있어서, 상기 ITO로 형성된 상기 TFT부의 소오스/드레인은 보상라인 및 화소전극으로도 적용되는 것을 특징으로 하는 액정표시장치 .The liquid crystal display device according to claim 1, wherein the source / drain of the TFT portion formed of the ITO is also applied to a compensation line and a pixel electrode. 제 1항에 있어서, 상기 TFT부의 상측에는 부유된 형태로 S/D금속이 위치되어 광누설전류를 방지하도록 된 것을 특징으로 하는 액정표시장치.2. The liquid crystal display device according to claim 1, wherein an S / D metal is positioned above the TFT portion in a floating form to prevent photo leakage current. 제 1항에 있어서, 상기 TFT부에 접촉공을 형성하여 S/D금속층이 상기 ITO의 내측에 위치되도록 하는 것을 특징으로 하는 액정표시장치.The liquid crystal display device according to claim 1, wherein a contact hole is formed in the TFT so that an S / D metal layer is positioned inside the ITO.
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