KR20020041180A - Method for cleaning semiconductor device - Google Patents

Method for cleaning semiconductor device Download PDF

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Publication number
KR20020041180A
KR20020041180A KR1020000070975A KR20000070975A KR20020041180A KR 20020041180 A KR20020041180 A KR 20020041180A KR 1020000070975 A KR1020000070975 A KR 1020000070975A KR 20000070975 A KR20000070975 A KR 20000070975A KR 20020041180 A KR20020041180 A KR 20020041180A
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South Korea
Prior art keywords
material layer
semiconductor device
contaminants
semiconductor substrate
cleansing
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KR1020000070975A
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Korean (ko)
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정민제
윤석훈
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윤종용
삼성전자 주식회사
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Priority to KR1020000070975A priority Critical patent/KR20020041180A/en
Publication of KR20020041180A publication Critical patent/KR20020041180A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: A cleansing method of semiconductor devices is provided to reduce residues of a substrate by performing an additional wet cleansing after removing contaminated material with material layer. CONSTITUTION: A material layer(110) made of a photoresist is formed on the entire surface of a substrate(100) deposited with a contaminated material such as particles(106). Then, the resultant structure is performed with a thermal treatment. The contaminated material is then removed by removing the material layer(110) in the same time. At this time, the removing process of the material layer is O2 plasma ashing. A wet cleansing is performed on the entire surface of the material layer and contaminated material removed substrate(100). At this time, the wet cleansing is additional cleansing.

Description

반도체 장치의 세정 방법{METHOD FOR CLEANING SEMICONDUCTOR DEVICE}Method of cleaning semiconductor device {METHOD FOR CLEANING SEMICONDUCTOR DEVICE}

본 발명은 반도체 장치의 제조 방법에 관한 것으로, 좀더 구체적으로는 포토레지스트막을 사용하여 반도체 기판 상의 오염 물질을 제거하는 반도체 장치의 세정 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for cleaning a semiconductor device using a photoresist film to remove contaminants on a semiconductor substrate.

반도체 장치는 절연막 및 도전막 등과 같은 각종 물질층의 증착 및 식각 공정을 반복적으로 수행함으로써 제조된다. 이러한 단위 공정들을 진행하는 동안 발생하는 오염 물질층은 반도체 장치의 불량은 유발시키는 직접적인 원인이 된다. 좀더 구체적으로 살펴보면, 각 단위 공정시 발생하는 각종 반응으로 인한 부산물들,공정 장비의 내벽에 증착되어 있던 막들 및 외부에서 공정 챔버 내로 유입된 불순물들이 반도체 장치를 오염시키는 오염원으로 작용한다.The semiconductor device is manufactured by repeatedly performing the deposition and etching processes of various material layers such as an insulating film and a conductive film. The contaminant layer generated during these unit processes is a direct cause of the failure of the semiconductor device. In more detail, by-products due to various reactions generated during each unit process, films deposited on the inner wall of the process equipment, and impurities introduced into the process chamber from the outside serve as a pollution source to contaminate the semiconductor device.

따라서, 반도체 제조 공정시의 청정도는 반도체 장치의 신뢰성 및 수율에 매우 큰 영향을 미친다. 특히, 반도체 장치가 고집적화되고 패턴이 미세해짐에 따라, 파티클(particle)과 같은 미세 입자들의 존재는 반도체 장치의 불량을 유발하는 직접적인 원인이 된다.Therefore, the cleanliness in the semiconductor manufacturing process greatly affects the reliability and yield of the semiconductor device. In particular, as semiconductor devices become highly integrated and patterns become finer, the presence of fine particles, such as particles, is a direct cause of failure of semiconductor devices.

통상적인 반도체 제조 공정에서 반도체 기판 상에 증착된 오염 물질들을 제거하기 위해 습식 세정 공정을 실시하고 있다. 습식 세정 공정은 소정의 화학 용액 속에 반도체 기판을 담그는 방법 또는 반도체 기판 상으로 화학 용액을 분사하는 방법 등으로 진행된다.In a conventional semiconductor manufacturing process, a wet cleaning process is performed to remove contaminants deposited on a semiconductor substrate. The wet cleaning process may be performed by dipping a semiconductor substrate in a predetermined chemical solution, or spraying a chemical solution onto the semiconductor substrate.

그러나, 이와 같이 화학 용액을 사용하는 습식 세정 공정만을 사용하면, 습식 세정 공정에 의해 제거될 수 없는 오염 물질의 경우에는 반도체 기판 상에 그대로 남아 있게 되는 문제가 있다.However, if only the wet cleaning process using the chemical solution is used in this way, there is a problem that the contaminants that cannot be removed by the wet cleaning process remain on the semiconductor substrate.

본 발명은 상술한 제반 문제를 해결하기 위해 제안된 것으로, 습식 세정 공정 만으로 제거할 수 없는 오염 물질을 반도체 기판 상에서 제거할 수 있는 세정 방법을 제공하는 데 그 목적이 있다.The present invention has been proposed to solve the above-mentioned problems, and an object thereof is to provide a cleaning method capable of removing contaminants on a semiconductor substrate that cannot be removed only by a wet cleaning process.

도 1a 내지 도 1c은 본 발명의 실시예에 의한 반도체 장치의 세정 방법을 설명하기 위한 단면도들이다.1A to 1C are cross-sectional views illustrating a method of cleaning a semiconductor device in accordance with an embodiment of the present invention.

*도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

100 : 반도체 기판102 : 하부 패턴100 semiconductor substrate 102 lower pattern

105 : 하부막106 : 파티클105: lower layer 106: particles

110 : 물질층110: material layer

(구성)(Configuration)

상술한 목적을 달성하기 위한 본 발명에 의한 반도체 장치의 세정 방법은,파티클과 같은 오염 물질이 증착된 반도체 기판 전면에 물질층을 형성한다. 상기 물질층을 제거하면서 동시에 상기 오염 물질이 제거되도록 한다. 상기 물질층 및 상기 오염 물질이 제거된 상기 반도체 기판 전면을 습식 세정한다.In the method of cleaning a semiconductor device according to the present invention for achieving the above object, a material layer is formed on the entire surface of a semiconductor substrate on which contaminants such as particles are deposited. The contaminant is removed while at the same time removing the material layer. The entire surface of the semiconductor substrate from which the material layer and the contaminants are removed is wet-cleaned.

본 발명에 있어서, 상기 물질층은 포토레지스트막으로 형성하는 것이 바람직하고, 상기 물질층을 제거하는 공정은 산소 플라즈마 애싱(O2plasma ashing) 공정으로 실시하는 것이 바람직하다.In the present invention, the material layer is preferably formed of a step of a photoresist film, and removing the material layer is preferably performed by an oxygen plasma ashing (O 2 plasma ashing) process.

또한, 상기 물질층을 포토레지스트막으로 형성한 경우, 상기 물질층을 형성한 후에 상기 물질층이 형성된 결과물을 열처리하는 단계를 더 포함하는 것이 바람직하다.In addition, when the material layer is formed of a photoresist film, it is preferable to further include the step of heat-treating the resultant material is formed after forming the material layer.

(실시예)(Example)

이하, 첨부된 도면들을 참조하여 본 발명의 실시예를 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1a를 참조하면, 반도체 기판(100) 상에 미세 패턴(102), 예를 들어 단위 소자 또는 금속 배선 등을 형성한다. 미세 패턴(102)을 포함하는 반도체 기판(100) 상에 절연막(105)을 형성한다. 절연막(100)은 예를 들어, 실리콘 산화막으로 형성한다. 이때, 절연막(105)의 증착 공정시 발생하는 부산물들이나 증착 장비 내에 존재하던 오염 물질들이 파티클(particle; 106)의 형태로 절연막(106) 상에 증착되어 반도체 장치를 오염시키는 오염원으로 작용할 수 있다. 이러한 파티클들(106)이 제거되지 않고 절연막(100) 상에 잔류하게 되면, 이는 반도체 장치의 불량을 유발시키는 원인으로 작용하게 된다.Referring to FIG. 1A, a fine pattern 102, for example, a unit element or a metal wiring, is formed on the semiconductor substrate 100. An insulating film 105 is formed on the semiconductor substrate 100 including the fine pattern 102. The insulating film 100 is formed of, for example, a silicon oxide film. In this case, by-products generated during the deposition process of the insulating layer 105 or contaminants present in the deposition equipment may be deposited on the insulating layer 106 in the form of particles 106 to act as a pollution source to contaminate the semiconductor device. If the particles 106 remain on the insulating film 100 without being removed, this causes a defect in the semiconductor device.

도 1b를 참조하면, 본 발명의 특징으로 절연막(105) 상에 존재하는 오염 물질인 파티클들(106)을 제거하기 위해 물질층(110)을 형성하는 공정을 수행한다. 즉, 파티클들(106)을 포함하는 절연막(105) 상에 물질층(110)을 형성한다. 물질층(110)은 절연막(105) 상에서 파티클들(106)을 제거하기 위한 것이므로, 파티클들(106)을 충분히 덮을 정도의 두께로 형성한다. 물질층(110)은 예를 들어, 포토레지스트막으로 형성하는 것이 바람직하다. 물질층(110)을 포토레지스트막으로 형성하는 경우, 포토레지트스막을 경화시키기 위해 포토레지스트막이 형성된 결과물을 소정 온도에서 열처리하는 베이크(bake) 공정을 실시한다.Referring to FIG. 1B, a process of forming the material layer 110 is performed to remove particles 106, which are contaminants present on the insulating layer 105. That is, the material layer 110 is formed on the insulating film 105 including the particles 106. Since the material layer 110 is used to remove the particles 106 on the insulating layer 105, the material layer 110 is formed to have a thickness sufficient to sufficiently cover the particles 106. For example, the material layer 110 may be formed of a photoresist film. When the material layer 110 is formed of a photoresist film, a bake process is performed to heat-treat the resultant on which the photoresist film is formed at a predetermined temperature to cure the photoresist film.

도 1c를 참조하면, 절연막(105) 상의 물질층(110)을 제거한다. 물질층(110)이 제거되면서, 물질층(110) 내부에 포함되어 있던 파티클들(106)도 동시에 제거된다. 이때, 물질층(110)이 포토레지스트막으로 형성된 경우라면, 포토레지스트막 및 파티클(106)은 예를 들어, 산소 플라즈마 애싱(O2plasma ashing) 공정으로 제거한다.Referring to FIG. 1C, the material layer 110 on the insulating layer 105 is removed. As the material layer 110 is removed, the particles 106 included in the material layer 110 are also removed at the same time. In this case, when the material layer 110 is formed of a photoresist film, the photoresist film and the particle 106 are removed by, for example, an O 2 plasma ashing process.

물질층(110) 및 파티클(106)이 제거된 결과물을 소정의 화학 용액을 사용하여 습식 세정한다. 그러면, 절연막(105) 상에 잔류하는 물질층 및 오염 물질들이 추가로 제거된다.The resultant from which the material layer 110 and the particle 106 are removed is wet-cleaned using a predetermined chemical solution. Then, the material layer and the contaminants remaining on the insulating film 105 are further removed.

본 발명은 물질층의 형성 및 제거 공정에 의해 반도체 기판 상의 오염 물질들을 제거한 후 추가로 습식 세정 공정을 실시함으로써, 오염 물질들이 반도체 기판 상에 잔류하는 것을 최소화할 수 있다. 이에 따라, 오염 물질들로 인해 반도체 장치의 불량이 유발되는 것을 방지할 수 있게 되므로, 반도체 장치의 신뢰성 및 수율을 향상시키는 효과가 있다.The present invention can minimize the contaminants remaining on the semiconductor substrate by further performing a wet cleaning process after removing the contaminants on the semiconductor substrate by the formation and removal of the material layer. Accordingly, since it is possible to prevent the defect of the semiconductor device due to the contaminants, there is an effect of improving the reliability and yield of the semiconductor device.

Claims (4)

오염 물질이 증착된 반도체 기판 전면에 물질층을 형성하는 단계;Forming a material layer on the entire surface of the semiconductor substrate on which the contaminants are deposited; 상기 물질층을 제거함과 동시에 상기 오염 물질을 제거하는 단계; 및Removing the contaminants while simultaneously removing the material layer; And 상기 물질층 및 상기 오염 물질이 제거된 상기 반도체 기판 전면을 습식 세정하는 단계를 포함하는 것을 특징으로 반도체 장치의 세정 방법.And wet-cleaning the entire surface of the semiconductor substrate from which the material layer and the contaminants have been removed. 제 1 항에 있어서,The method of claim 1, 상기 물질층은 포토레지스트막으로 형성하는 것을 특징으로 하는 반도체 장치의 세정 방법.And the material layer is formed of a photoresist film. 제 2 항에 있어서,The method of claim 2, 상기 물질층을 제거하는 공정은 산소 플라즈마 애싱(O2plasma ashing) 공정으로 실시하는 것을 특징으로 하는 반도체 장치의 세정 방법.And removing the material layer is performed by an O 2 plasma ashing process. 제 2 항에 있어서,The method of claim 2, 상기 물질층을 형성한 후 상기 물질층이 형성된 결과물을 열처리하는 단계를 더 포함하는 것을 특징으로 하는 반도체 장치의 세정 방법.And heat treating the resultant material layer formed after the material layer is formed.
KR1020000070975A 2000-11-27 2000-11-27 Method for cleaning semiconductor device KR20020041180A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210024385A (en) * 2019-08-23 2021-03-05 세메스 주식회사 Method for treating a substrate and an apparatus for treating a substrate

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246332A (en) * 1989-03-20 1990-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPH03229415A (en) * 1990-02-05 1991-10-11 Fujitsu Ltd Method of dry-cleaning semiconductor device
JPH06314679A (en) * 1993-04-30 1994-11-08 Sony Corp Cleaning method of semiconductor substrate
JPH07254597A (en) * 1994-03-15 1995-10-03 Matsushita Electric Ind Co Ltd Formation of oxide film
KR970063540A (en) * 1996-02-26 1997-09-12 김광호 Method for manufacturing semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246332A (en) * 1989-03-20 1990-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPH03229415A (en) * 1990-02-05 1991-10-11 Fujitsu Ltd Method of dry-cleaning semiconductor device
JPH06314679A (en) * 1993-04-30 1994-11-08 Sony Corp Cleaning method of semiconductor substrate
JPH07254597A (en) * 1994-03-15 1995-10-03 Matsushita Electric Ind Co Ltd Formation of oxide film
KR970063540A (en) * 1996-02-26 1997-09-12 김광호 Method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210024385A (en) * 2019-08-23 2021-03-05 세메스 주식회사 Method for treating a substrate and an apparatus for treating a substrate

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