KR20020028568A - Device for Flat Panel Display and Method for Manufacturing the Same - Google Patents

Device for Flat Panel Display and Method for Manufacturing the Same Download PDF

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Publication number
KR20020028568A
KR20020028568A KR1020000059628A KR20000059628A KR20020028568A KR 20020028568 A KR20020028568 A KR 20020028568A KR 1020000059628 A KR1020000059628 A KR 1020000059628A KR 20000059628 A KR20000059628 A KR 20000059628A KR 20020028568 A KR20020028568 A KR 20020028568A
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conductive layer
substrate
transparent electrode
forming
flat panel
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KR1020000059628A
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Korean (ko)
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KR100356730B1 (en
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이용근
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이용일
(주)해라시스템
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/085—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by electromagnetic means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

PURPOSE: A flat panel display(FPD) and a fabrication method thereof are provided to fabricate a horizontal movement type operation structure having a high optical opening efficiency and low fabrication cost. CONSTITUTION: The flat panel display(FPD) transmitting or blocking a light(18) comprises a transparent electrode(11) formed on a substrate, and a horizontal movement body(14) separated from the transparent electrode vertically and supported by a bottom supporting beam(13). A top electrode(15) is separated from the horizontal movement body vertically and is supported by a top supporting beam. And a mask(16) and a window are formed on the horizontal movement body and the top electrode. The substrate is formed with one of a semiconductor substrate, a glass and a quartz. The horizontal movement body moves horizontally by an applying voltage difference between the transparent electrode and the top electrode and the horizontal movement body.

Description

평판표시장치 소자 및 그 제조방법{Device for Flat Panel Display and Method for Manufacturing the Same}Device for flat panel display and method for manufacturing the same

본 발명은 평판표시장치 소자에 관한 것으로, 특히 반도체 공정으로 제작하여 빛을 차단하거나 통과시키는 평판표시장치 소자 및 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat panel display device, and more particularly, to a flat panel display device and a method of manufacturing the same, which are manufactured by a semiconductor process to block or pass light.

종래의 대표적인 표시장치인 액정(Liquid Crystal)을 사용하는 광개폐소자는 응시각도에 따른 빛의 콘트라스트 변화가 심하고, 액정의 반응시간이 길어 동화상표현이 어렵다. 또한, 빛의 사용효율이 낮다는 결점 외에 액정주입, 액정정렬을 위한 별도의 조립공정이 필수적인 점 등 생산단가가 고가화 된다는 큰 문제가 있다.The photo-switching device using a liquid crystal (Liquid Crystal), which is a typical display device of the related art has a severe change in contrast of light according to the gaze angle, and a long response time of the liquid crystal, making it difficult to express a moving image. In addition, there is a big problem that the production cost is high, such as the need for a separate assembly process for liquid crystal injection and liquid crystal alignment, in addition to the drawback of low light efficiency.

또한, 종래의 기계적 광 샷터는 일반적으로 전력소모가 많으며 빠른 동작이 어렵고, 수백 ㎛ 크기의 미소한 광 샷터를 만드는 것이 어려우며 이들을 복수개 배치하여 디스플레이의 화소로서 사용하는 것은 불가능하였다.In addition, the conventional mechanical light shotter generally consumes a lot of power and is difficult to operate quickly, and it is difficult to make a minute light shotter having a size of several hundred μm, and it is impossible to arrange a plurality of them and use them as pixels of a display.

상기와 같은 문제점을 해결하기 위해 안출된 본 발명의 목적은 광개폐효율이 높고 생산단가가 낮은 광개폐소자인 수평 이동형 가동 구조체를 반도체 공정만으로 수 ㎛에서 수백 ㎛ 크기로 제작하는데 있다.An object of the present invention devised to solve the above problems is to fabricate a horizontal movable movable structure, which is a light switching device with high light switching efficiency and low production cost, from a few micrometers to several hundred micrometers in the semiconductor process alone.

도 1a 및 1b는 본 발명에 따른 평판표시장치 소자의 단면도 및 작동원리도1A and 1B are a cross-sectional view and an operation principle diagram of a flat panel display device according to the present invention.

도 2a 내지 도 2d는 본 발명에 따른 평판표시장치 소자의 공정단면도2A through 2D are cross-sectional views of a flat panel display device according to the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10 : 기판 11 : 투명전극10 substrate 11 transparent electrode

12 : 상부지지빔 13 : 하부지지빔12: upper support beam 13: lower support beam

14 : 수평이동자 15 : 상부전극14: horizontal mover 15: upper electrode

16 : 마스크 17 : 창16: mask 17: window

18 : 빛18: light

상기와 같은 목적을 달성하기 위한 본 발명의 수평이동형 가동구조체는 기판위에 형성된 투명전극과, 투명전극과 수직적으로 이격되고 하부지지빔에 의해 지지되는 수평이동자와, 수평이동자에 수직적으로 이격되고 상부지지빔에 의해 지지되는 상부전극, 및 수평이동자와 상부전극에 형성된 마스크와 창으로 구성됨을 특징으로 한다.The horizontal movable movable structure of the present invention for achieving the above object is a transparent electrode formed on the substrate, a horizontal mover vertically spaced from the transparent electrode and supported by the lower support beam, spaced vertically spaced and vertically supported by the horizontal mover And an upper electrode supported by the beam, and a mask and a window formed on the horizontal mover and the upper electrode.

한편, 상기와 같은 목적을 달성하기 위한 본 발명의 수평이동형 가동구조체의 제조방법은 기판 위에 절연막을 형성하는 제1단계와, 절연막 위에 제1전도층을 형성하여 전압이 인가될 투명전극을 형성하는 제2단계와, 투명전극을 포함한 기판전체 표면에 제1희생층을 형성하는 제3단계와, 수평이동자 및 하부지지빔을 형성하기 위해 제1희생층을 식각한 후 제2전도층을 형성하는 제4단계와, 수평이동자에 마스크와 창을 형성하기 위해 상기 제2전도층을 식각하는 제5단계와, 제2전도층을 포함한 기판전체 표면에 제2희생층을 형성하는 제6단계와, 상부전극 및 상부지지빔을 형성하기 위해 제2희생층을 식각한 후 제3전도층을 형성하는 제7단계와, 상부전극에 마스크 및 창을 형성하기 위해 제3전도층을 식각하는 제8단계, 및 제1 및 제2희생층을 제거하는 제9단계로 이루어짐을 특징으로 한다.On the other hand, the method of manufacturing a horizontal movable structure of the present invention for achieving the above object is a first step of forming an insulating film on the substrate, and forming a first conductive layer on the insulating film to form a transparent electrode to be applied a voltage Forming a first sacrificial layer on the entire surface of the substrate including the transparent electrode; and forming a second conductive layer after etching the first sacrificial layer to form a horizontal mover and a lower support beam. A fourth step, a fifth step of etching the second conductive layer to form a mask and a window in the horizontal mover, a sixth step of forming a second sacrificial layer on the entire surface of the substrate including the second conductive layer, A seventh step of etching the second sacrificial layer to form the upper electrode and the upper support beam, and forming a third conductive layer; and an eighth step of etching the third conductive layer to form a mask and a window in the upper electrode And a ninth to remove the first and second sacrificial layers And the yirueojim to step characterized.

최근에 반도체 가공기술을 활용하여 수 ㎛ 에서 수백 ㎛ 크기의 기계적 구조체를 제작하는 기술, 즉 마이크로 머시닝 기술이 마이크로미터 크기의 센서 및 액츄에이터 제작에 응용되고 있다. 따라서, 이러한 마이크로 머시닝 기술을 활용하여 미소 기계구조체를 제작함으로써, 액정(Liquid Crystal)을 사용하는 표시장치의 단점인 낮은 빛의 사용효율을 높이고, 높은 생산단가 역시 양산성이 우수한 반도체 공정만을 사용함으로써 획기적으로 낮출 수 있다.Recently, a technique of fabricating a mechanical structure of several micrometers to several hundred micrometers by using semiconductor processing technology, that is, micromachining technology, has been applied to fabricate micrometer-sized sensors and actuators. Therefore, by fabricating the micro-mechanical structure using the micro-machining technology, it is possible to increase the use efficiency of low light, which is a disadvantage of the display device using liquid crystal, and to use only the semiconductor process having high mass production cost. It can be lowered significantly.

또한, 미세한 가공이 가능한 반도체 공정을 사용함으로써 더욱 미소한 수십 ㎛ 크기의 디스플레이 화소를 만들 수 있다.In addition, by using a semiconductor process capable of fine processing, it is possible to produce a display pixel having a smaller size of several tens of micrometers.

이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명의 수평 이동형 가동 구조체의 단면도 및 동작원리도이다.1 is a cross-sectional view and a principle of operation of a horizontally movable movable structure of the present invention.

도 1a에 나타낸 바와 같이, 초기상태로서 투명전극(11)과 하부지지빔(13)으로 지지되는 수평이동자(14) 및 상부지지빔(12)으로 지지되는 상부전극(15)에 인가한 전압 차이가 없어 전기장이 형성되지 않는 경우이다. 이 상태에서는 수평이동자(14)가 수평운동을 하지 않고 평형 상태로 유지되므로 광원으로부터 나온 빛(18)이 상부전극(15)의 마스크(16)에 의해 모두 차단된다.As shown in FIG. 1A, the voltage difference applied to the horizontal mover 14 supported by the transparent electrode 11 and the lower support beam 13 and the upper electrode 15 supported by the upper support beam 12 as an initial state. If no electric field is formed. In this state, since the horizontal mover 14 remains in an equilibrium state without horizontal movement, all the light 18 emitted from the light source is blocked by the mask 16 of the upper electrode 15.

도 1b에 나타낸 바와 같이, 구동상태로서 투명전극(11)과 상부지지빔(12)으로 지지되는 상부전극(15)에 인가한 전압과 하부지지빔(13)으로 지지되는 수평이동자(14)에 인가한 전압 차이로 인해 전기장이 형성되어 그 전기장에 의해 수평이동자 내부의 자유전하가 힘을 받아 수평이동자가 수평운동을 하는 경우이다. 즉, 투명전극(11)과 수평이동자(14) 및 상부전극(15)이 놓여있는 공간에 프린지(Fringe)전기장과 수직 전기장이 발생하며, 그 때의 정전기력으로 수평이동자(14)가 힘을 받아 병진운동을 하게 된다. 이동하는 수평이동자(14)와 상부전극(15)의 마스크(16)상에 구성된 창(17)에 의해 빛(18)이 통과된다. 수평이동자(14)가 이동하면 수평이동자(14)를 지지하는 하부지지빔(13)이 탄성변형하게 되며, 모든 전극에 인가한 전압을 해제하면 하부지지빔(13)에 저장된 탄성에너지에 의해 수평이동자는 초기상태로 돌아온다. 여기서, 도 1b 및 도 1a를 각각 초기상태 및 구동상태로 활용할 수도 있다.As shown in FIG. 1B, the voltage applied to the upper electrode 15 supported by the transparent electrode 11 and the upper support beam 12 and the horizontal mover 14 supported by the lower support beam 13 as a driving state. The electric field is formed due to the applied voltage difference, and the free charge inside the horizontal mover is applied by the electric field, and the horizontal mover moves horizontally. That is, a fringe electric field and a vertical electric field are generated in the space in which the transparent electrode 11, the horizontal mover 14, and the upper electrode 15 are placed, and the horizontal mover 14 receives the force by the electrostatic force at that time. Will be translated. Light 18 is passed by the moving horizontal mover 14 and the window 17 formed on the mask 16 of the upper electrode 15. When the horizontal mover 14 is moved, the lower support beam 13 supporting the horizontal mover 14 is elastically deformed. When the voltage applied to all electrodes is released, the horizontal supporter 14 is horizontally moved by the elastic energy stored in the lower support beam 13. The mover returns to its initial state. 1B and 1A may be used as an initial state and a driving state, respectively.

즉, 마이크로 머시닝 기술로서 수평운동이 가능한 박막 수평이동자를 제작하고, 절연체에 매립되어 있는 투명전극과 상부공간에 형성한 상부전극에 적절한 전압을 가하여 이동전극을 원하는 방향으로 움직이게 함으로써 빛을 개폐하는 방식을 사용한다.That is, as a micromachining technique, a thin film horizontal mover capable of horizontal movement is manufactured, and a light is opened and closed by moving a moving electrode in a desired direction by applying an appropriate voltage to a transparent electrode embedded in an insulator and an upper electrode formed in an upper space. Use

이하, 첨부된 도면을 참조하여 본 발명의 제조공정을 상세히 설명하면 다음과 같다.Hereinafter, the manufacturing process of the present invention with reference to the accompanying drawings in detail as follows.

도 2a 내지 도 2d는 본 발명에 따른 평판표시장치 소자의 공정단면도이다.2A to 2D are cross-sectional views of a flat panel display device according to the present invention.

먼저, 도 2a에 나타낸 바와 같이 전압을 인가하기 위한 형성공정으로,기판(20)에 투명전극과의 절연을 위해 절연막(도시되지 않음)을 형성하고, 제1전도층(21)을 증착한 후 패턴하여 전원이 공급될 투명전극 영역을 소정의 간격으로 이격하여 형성한다. 여기서, 기판은 반도체기판, 유리 또는 석영을 사용할 수 있다.First, as shown in FIG. 2A, as an forming process for applying a voltage, an insulating film (not shown) is formed on the substrate 20 to insulate the transparent electrode, and then the first conductive layer 21 is deposited. The transparent electrode regions to be supplied with power are patterned at predetermined intervals. Here, the substrate may be a semiconductor substrate, glass or quartz.

이어서, 도 2b에 나타낸 바와 같이 패턴된 제1전도층을 포함한 전체 상부표면에 제1희생층(22)을 형성하고, 하부지지빔이 형성될 영역을 위해 제1희생층을 식각한 후 제2전도층(23)을 증착한 후 식각하여 마스크와 창을 형성한다.Subsequently, as shown in FIG. 2B, the first sacrificial layer 22 is formed on the entire upper surface including the patterned first conductive layer, and the second sacrificial layer is etched for the region where the lower support beam is to be formed. The conductive layer 23 is deposited and then etched to form a mask and a window.

이어서, 도 2c에 나타낸 바와 같이 수평이동자를 포함한 전체 상부표면에 제2희생층(24)을 형성하고, 상부지지빔과 상부전극이 형성될 영역을 이방성 식각한 후 제3전도층(25)을 증착한 후 식각하여 마스크와 창을 형성한다.Subsequently, as shown in FIG. 2C, the second sacrificial layer 24 is formed on the entire upper surface including the horizontal mover, the anisotropic etching of the region in which the upper support beam and the upper electrode are to be formed, and then the third conductive layer 25 is performed. After deposition, it is etched to form a mask and a window.

마지막으로, 도 2d에 나타낸 바와 같이 제1, 제2 희생층을 제거하여 수평이동형 가동 구조체를 형성한다. 여기서, 전도층은 1∼10㎛ 두께로 불순물이 도핑된 반도체층, 메탈층, 카본 또는 그라파이트로 형성하며, 희생층은 1∼10㎛ 두께로 SOG, TEOS, LTO, 스퍼터-산화막, 폴리머, 폴리이미드 또는 질화막으로 형성한다. 또한, 지지빔은 수평방향으로는 작은 저항강성을 갖도록 하고, 수직방향으로는 수평이동자를 충분히 지지할 수 있도록 하는 형상을 가지며 수직방향 강성이 작으면 수평이동자와 기판이 고착하는 현상이 발생하므로 지지빔은 이러한 고착현상을 충분히 이길 수 있도록 충분한 수직방향 강성을 갖도록 단면과 형상을 형성한다.Finally, as shown in FIG. 2D, the first and second sacrificial layers are removed to form a horizontal movable structure. Here, the conductive layer is formed of a semiconductor layer, a metal layer, carbon or graphite doped with impurities in a thickness of 1 to 10㎛, and the sacrificial layer is SOG, TEOS, LTO, sputter-oxide film, polymer, poly It is formed of a mid or nitride film. In addition, the support beam has a small resistance stiffness in the horizontal direction, and has a shape that can sufficiently support the horizontal mover in the vertical direction, and when the vertical rigidity is small, the horizontal mover and the substrate adhere to each other. The beam forms a cross section and shape to have sufficient vertical stiffness to sufficiently overcome this fixation.

이와 같은 본 발명의 평판표시장치 소자는 "Nomally-close"형의 광소자로서 빛의 통과는 상부전극 및 투명전극과 수평이동자의 인가전압에 차이를 두어 그에 따른 정전기력의 차이에 의해 수평이동자가 수평이동 하여 빛의 경로를 통과시키는형태로 형성된다. 본 발명에서는 특히, 마이크로 머시닝 기술에서 가장 약점인 희생층 제거시에 발생하는 상부층과 하부층과의 고착문제를 해결하기 위해 지지빔을 채용하고, 또한 창을 형성하여 희생층 제거 공정을 단순화하여 생산수율을 비약적으로 높이는 것이 특징이다.The flat panel display device of the present invention is a "Nomally-close" optical device, the light passing through the horizontal electrode is horizontal due to the difference in the applied voltage of the upper electrode, the transparent electrode and the horizontal mover according to the difference in the electrostatic force It is formed to move and pass the path of light. In particular, the present invention employs a support beam to solve the problem of adhesion between the upper layer and the lower layer that occurs during the removal of the sacrificial layer, which is the weakest point in the micromachining technology, and also forms a window to simplify the process of removing the sacrificial layer, thereby producing a yield. It is characterized by greatly increasing.

상기와 같은 본 발명은 마이크로 머시닝 기술에서 가장 약점인 희생층 제거시에 발생하는 상부층과 하부층과의 고착문제를 해결하기 위해 지지빔을 채용하고, 또한 창을 형성하여 희생층 제거 공정을 단순화하여 생산수율을 비약적으로 높일 수 있다.As described above, the present invention employs a support beam to solve the problem of adhesion between the upper layer and the lower layer, which occurs when removing the sacrificial layer, which is the weakest point in the micromachining technology, and also forms a window to simplify the sacrificial layer removing process. The yield can be dramatically increased.

Claims (10)

빛을 차단하거나 통과시키는 평판표시장치 소자에 있어서,In the flat panel display device for blocking or passing light, 기판 위에 형성된 투명전극과,A transparent electrode formed on the substrate, 상기 투명전극과 수직적으로 이격되고 하부지지빔에 의해 지지되는 수평이동자와,A horizontal mover vertically spaced from the transparent electrode and supported by a lower support beam; 상기 수평이동자에 수직적으로 이격되고 상부지지빔에 의해 지지되는 상부전극, 및An upper electrode spaced perpendicular to the horizontal mover and supported by an upper support beam; and 상기 수평이동자 및 상기 상부전극에 형성된 마스크와 창으로 구성됨을 특징으로 하는 평판표시장치 소자.And a mask and a window formed on the horizontal mover and the upper electrode. 제1항에 있어서,The method of claim 1, 상기 기판은 반도체기판, 유리, 석영 중 어느 하나인 것을 특징으로 하는 평판표시장치 소자.And the substrate is any one of a semiconductor substrate, glass and quartz. 제1항에 있어서,The method of claim 1, 상기 수평이동자는 상기 투명전극 및 상기 상부전극과 상기 수평이동자의 인가전압 차이로 수평운동하는 것을 특징으로 하는 평판표시장치 소자.And the horizontal mover moves horizontally due to a difference in voltage applied between the transparent electrode, the upper electrode, and the horizontal mover. 제1항에 있어서,The method of claim 1, 상기 마스크와 창은 빛을 개폐하는 것을 특징으로 하는 평판표시장치 소자.And the mask and the window open and close light. 제1항에 있어서,The method of claim 1, 상기 하부지지빔은 상기 수평이동자를 충분히 지지하고, 수평운동을 원활히 할 수 있도록 형성된 것을 특징으로 하는 평판표시장치 소자.And the lower support beam is formed to sufficiently support the horizontal mover and to facilitate horizontal movement. 평판표시장치 소자를 제조하는 방법에 있어서,In the method for manufacturing a flat panel display device, 기판 위에 절연막을 형성하는 제1단계와,A first step of forming an insulating film on the substrate, 상기 절연막 위에 제1전도층을 형성하여 전압이 인가될 투명전극을 형성하는 제2단계와,A second step of forming a transparent electrode to which a voltage is applied by forming a first conductive layer on the insulating film; 상기 투명전극을 포함한 기판전체 표면에 제1희생층을 형성하는 제3단계와,A third step of forming a first sacrificial layer on the entire surface of the substrate including the transparent electrode; 수평이동자 및 하부지지빔을 형성하기 위해 제1희생층을 식각한 후 제2전도층을 형성하는 제4단계와,A fourth step of forming a second conductive layer after etching the first sacrificial layer to form the horizontal mover and the lower support beam; 수평이동자에 마스크와 창을 형성하기 위해 상기 제2전도층을 식각하는 제5단계와,Etching the second conductive layer to form a mask and a window in a horizontal mover; 상기 제2전도층을 포함한 기판전체에 제2희생층을 형성하는 제6단계와,A sixth step of forming a second sacrificial layer on the entire substrate including the second conductive layer; 상부전극 및 상부지지빔을 형성하기 위해 제2희생층을 식각한 후 제3전도층을 형성하는 제7단계와,A seventh step of forming a third conductive layer after etching the second sacrificial layer to form the upper electrode and the upper support beam; 상기 상부전극에 마스크 및 창을 형성하기 위해 제3전도층을 식각하는 제8단계, 및An eighth step of etching a third conductive layer to form a mask and a window in the upper electrode, and 상기 제1 및 제2희생층을 제거하는 제9단계로 이루어짐을 특징으로 하는 평판표시장치 소자의 제조방법.And a ninth step of removing the first and second sacrificial layers. 제6항에 있어서,The method of claim 6, 상기 기판은 반도체기판, 유리, 석영 중 어느 하나인 것을 특징으로 하는 평판표시장치 소자의 제조방법.The substrate is a method of manufacturing a flat panel display device, characterized in that any one of a semiconductor substrate, glass, quartz. 제6항에 있어서,The method of claim 6, 상기 희생층은 SOG, TEOS, LTO, 스퍼터-산화막, 폴리머, 폴리이미드 또는 질화막 중 어느 하나인 것을 특징으로 하는 평판표시장치 소자의 제조방법.And the sacrificial layer is any one of SOG, TEOS, LTO, sputter-oxide film, polymer, polyimide or nitride film. 제6항에 있어서,The method of claim 6, 상기 전도층은 반도체층, 메탈층, 카본, 그라파이트 중 어느 하나인 것을 특징으로 하는 평판표시장치 소자의 제조방법.The conductive layer is a method of manufacturing a flat panel display device, characterized in that any one of a semiconductor layer, a metal layer, carbon, graphite. 제6항에 있어서,The method of claim 6, 상기 희생층 및 상기 전도층은 1∼10㎛ 두께로 형성하는 것을 특징으로 하는 평판표시장치 소자의 제조방법.And the sacrificial layer and the conductive layer are formed to a thickness of 1 to 10㎛.
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