KR20020028566A - Light Modulator and Method for Manufacturing the Same - Google Patents
Light Modulator and Method for Manufacturing the Same Download PDFInfo
- Publication number
- KR20020028566A KR20020028566A KR1020000059626A KR20000059626A KR20020028566A KR 20020028566 A KR20020028566 A KR 20020028566A KR 1020000059626 A KR1020000059626 A KR 1020000059626A KR 20000059626 A KR20000059626 A KR 20000059626A KR 20020028566 A KR20020028566 A KR 20020028566A
- Authority
- KR
- South Korea
- Prior art keywords
- upper electrode
- electrode structure
- forming
- substrate
- layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 230000003321 amplification Effects 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
Description
본 발명은 광 변조기에 관한 것으로, 특히 반도체 공정으로 제작하여 광을 먹스(MUX) 또는 디먹스(DEMUX) 기능을 하는 다 자유도를 갖는 광 변조기 및 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical modulator, and more particularly, to an optical modulator having a multiplicity of freedom that functions as a mux or demux by fabricating a semiconductor process and a method of manufacturing the same.
최근에 반도체 가공기술을 활용하여 수 ㎛ 에서 수백 ㎛ 크기의 기계적 미소구조체를 제작하는 기술, 즉 마이크로 머시닝 기술이 마이크로미터 크기의 센서 및 액츄에이터 제작에 응용되고 있으며 정전기력을 이용한 미소구조체는 광을 제어하는데 사용되고 있다. 이러한 마이크로 머시닝 기술을 활용하여 미소 기계구조체를 제작함으로써, 액정(Liquid Crystal)을 사용하는 표시장치의 단점인 낮은 빛의 사용효율을 높이고, 높은 생산단가 역시 양산성이 우수한 반도체 공정만을 사용함으로써 획기적으로 낮출 수 있다. 또한, 미세한 가공이 가능한 반도체 공정을 사용하므로써 더욱 미소한 수십 ㎛ 크기의 디스플레이 화소를 만들 수 있다.In recent years, microfabrication techniques, which are used to fabricate microstructures of several micrometers to hundreds of micrometers, have been applied to fabricate micrometer-sized sensors and actuators. It is used. By fabricating micromechanical structures using such micromachining technology, the efficiency of low light, which is a disadvantage of a liquid crystal (liquid crystal) display device, can be improved, and the high production cost can also be achieved by using only high-volume semiconductor processes. Can be lowered. In addition, by using a semiconductor process capable of fine processing, it is possible to produce a display pixel having a smaller size of several tens of micrometers.
종래의 정전기력에 의한 미소 구조체는 정전기력을 높이기 위해서는 전극간 거리를 짧게 하거나 전극 면적을 넓게 해야 한다. 따라서 회전변위를 크게 하기 위해서는 넓은 회전 공간이 필요하고, 그에 따라 매우 높은 전압이 필요하였다.In the conventional microstructure by the electrostatic force, in order to increase the electrostatic force, it is necessary to shorten the distance between electrodes or widen the electrode area. Therefore, in order to increase the rotational displacement, a wide rotational space is required, and thus a very high voltage is required.
상기와 같은 문제점을 해결하기 위해 안출된 본 발명의 목적은 낮은 정전압으로 큰 회전변위를 갖고, 상부전극구조체의 개수만큼의 회전자유도를 갖는 미소구조체를 반도체 공정만으로 제작하는데 있다.An object of the present invention devised to solve the above problems is to produce a microstructure having a large rotational displacement with a low constant voltage, and having a rotational degree of freedom as many as the number of the upper electrode structure by the semiconductor process only.
도 1은 본 발명에 따른 다 자유도를 갖는 광 변조기의 평면도1 is a plan view of an optical modulator having multiple degrees of freedom in accordance with the present invention;
도 2는 본 발명에 따른 다 자유도를 갖는 광 변조기의 단면도2 is a cross-sectional view of an optical modulator with multiple degrees of freedom in accordance with the present invention.
도 3a 내지 도 3d는 본 발명에 따른 다 자유도를 갖는 광 변조기의 제조공정단면도3A to 3D are cross-sectional views of a manufacturing process of an optical modulator having multiple degrees of freedom according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
10 : 기판 11 : 하부전극10 substrate 11 lower electrode
12 : 상부전극구조체 13 : 제1하부지지빔12: upper electrode structure 13: the first lower support beam
14 : 기둥 15 : 회전 스테이지14: pillar 15: rotation stage
16 : 제2하부지지빔16: second lower support beam
상기와 같은 목적을 달성하기 위한 본 발명의 다 자유도를 갖는 광 변조기는 기판 위에 형성된 하부전극과, 하부전극에 수직적으로 이격되어 회전운동이 가능한 상기 상부전극구조체와, 상부전극구조체의 개수만큼의 회전자유도를 갖는 회전스테이지 및 상부전극구조체 및 상기 회전스테이지를 각각 지지하는 제1 및 제2하부지지빔으로 이루어짐을 특징으로 한다.Optical modulator having a multi-degree of freedom of the present invention for achieving the above object is a lower electrode formed on the substrate, the upper electrode structure and the upper electrode structure capable of rotating movement vertically spaced apart from the lower electrode, the number of rotations of the upper electrode structure And a first and second lower support beams supporting the rotating stage and the upper electrode structure having the degrees of freedom and the rotating stage, respectively.
한편, 상기와 같은 목적을 달성하기 위한 본 발명의 다 자유도를 갖는 광 변조기의 제조방법은 기판 위에 절연막을 형성하는 제1단계와, 절연막 위에 제1전도층을 형성하여 전압이 인가될 하부전극을 형성하는 제2단계와, 하부전극을 포함한 전체기판 표면에 제1희생층을 형성하는 제3단계와, 제1하부지지빔 및 상부전극구조체를 형성하기 위해 상기 제1희생층을 식각한 후 제2전도층을 형성하는 제4단계와, 제2전도층을 식각하여 상부전극구조체를 형성하는 제5단계와, 상부전극구조체를 포함한 기판전체 표면에 제2희생층을 형성하는 제6단계와, 제2하부지지빔 및 회전스테이지를 형성하기 위해 제2희생층을 식각한 후 제3전도층을 형성하는 제7단계와, 제3전도층을 식각하여 회전스테이지를 형성하는 제8단계, 및 제1 및 제2희생층을 제거하는 제9단계로 이루어짐을 특징으로 한다.On the other hand, the manufacturing method of the optical modulator having a multi-degree of freedom of the present invention for achieving the above object is a first step of forming an insulating film on the substrate, and forming a first conductive layer on the insulating film to the lower electrode to be applied voltage Forming a second sacrificial layer; forming a first sacrificial layer on the entire substrate surface including the lower electrode; and etching the first sacrificial layer to form a first lower support beam and an upper electrode structure. A fourth step of forming a second conductive layer, a fifth step of forming an upper electrode structure by etching the second conductive layer, a sixth step of forming a second sacrificial layer on the entire surface of the substrate including the upper electrode structure, A seventh step of etching a second sacrificial layer to form a second lower support beam and a rotating stage, and forming a third conductive layer; an eighth step of forming a rotating stage by etching a third conductive layer; and As a ninth step to remove the first and second sacrificial layers Characterized in that made.
이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
도 1 및 도 2는 본 발명의 다 자유도를 갖는 광 변조기의 평면도 및 단면도를 나타낸 것이다.1 and 2 show a plan view and a cross-sectional view of an optical modulator with multiple degrees of freedom of the present invention.
도 1 및 도 2에 나타낸 바와 같이, 본 발명의 다 자유도를 갖는 광 변조기는 기판(10)에 하부전극(11)과 상부전극구조체(12)를 지지하는 제1하부지지빔(13), 상부전극구조체(12)에 의해 회전하는 스테이지(15)를 지지하는 제2하부지지빔(14)을 형성하여 이루어져 있다. 여기서, 상부전극구조체(12)는 힘을 증폭하기 위해 정전압을 인가 시 회전스테이지에 접촉되는 부분의 길이를 짧게 하고 그 위에 기둥(14)을 형성한다.As shown in Figs. 1 and 2, the optical modulator having the multiple degrees of freedom of the present invention includes: a first lower support beam 13, an upper part supporting the lower electrode 11 and the upper electrode structure 12 on the substrate 10; The second lower support beam 14 supporting the stage 15 rotating by the electrode structure 12 is formed. Here, the upper electrode structure 12 shortens the length of the portion in contact with the rotating stage when a constant voltage is applied to amplify the force and forms a pillar 14 thereon.
본 발명의 다 자유도를 갖는 광 변조기의 동작원리는 기판(10)에 형성된 하부전극(11)과 제1하부지지빔(13)에 의해 지지되는 상부전극구조체(12) 사이의 인가전압 차이에 의해 정전기력이 발생되어 상부전극구조체(12)가 회전운동을 하게 되면 회전스테이지가 회전운동을 하게 된다. 이때 빛은 회전스테이지(15)에 의해 반사된다.The operation principle of the optical modulator having the multiple degrees of freedom of the present invention is due to the difference in applied voltage between the lower electrode 11 formed on the substrate 10 and the upper electrode structure 12 supported by the first lower support beam 13. When the electrostatic force is generated and the upper electrode structure 12 rotates, the rotating stage rotates. At this time, the light is reflected by the rotating stage (15).
상부전극구조체(12)의 개수만큼의 회전자유도를 갖기 때문에 빛을 여러 방향으로 반사시키거나 모을 수 있다. 여기서, 상부전극구조체(12)에 의해 회전스테이지가 회전하면 상부전극구조체(12)와 회전스테이지(15)를 지지하는 제1하부지지빔(13) 및 제2하부지지빔(14)은 탄성 변형하게 되며, 모든 전극에 인가한 전압을 해제하면 하부지지빔(13, 14)에 저장된 탄성에너지에 의해 상부전극구조체(12)와 회전스테이지(15)는 초기상태로 돌아온다.Since the number of rotation degrees of freedom of the upper electrode structure 12 is equal, light may be reflected or collected in various directions. Here, when the rotating stage is rotated by the upper electrode structure 12, the first lower support beam 13 and the second lower support beam 14 supporting the upper electrode structure 12 and the rotating stage 15 are elastically deformed. When the voltage applied to all the electrodes is released, the upper electrode structure 12 and the rotating stage 15 are returned to their initial state by the elastic energy stored in the lower support beams 13 and 14.
본 발명은 마이크로 머시닝 기술로서 회전운동이 가능한 상부전극구조체와 회전스테이지를 제작하고, 하부전극과 상부공간에 형성한 상부전극구조체에 적절한 전압을 가하여 이 회전스테이지를 원하는 방향으로 움직이게 함으로써 빛을 먹스(MUX) 또는 디먹스(DEMUX) 기능에 이용할 수 있다.The present invention is a micro-machining technology to produce a top electrode structure and a rotating stage capable of rotational movement, and by applying an appropriate voltage to the upper electrode structure formed in the lower electrode and the upper space to move the rotation stage in the desired direction, the light (mux) MUX) or Demux function.
이하, 첨부된 도면을 참조하여 본 발명의 제조공정을 상세히 설명하면 다음과 같다.Hereinafter, the manufacturing process of the present invention with reference to the accompanying drawings in detail as follows.
도 3a 내지 도 3d는 본 발명에 따른 다 자유도를 갖는 광 변조기의 제조공정 단면도이다.3A to 3D are cross-sectional views of a manufacturing process of an optical modulator having multiple degrees of freedom according to the present invention.
먼저, 도 3a에 나타낸 바와 같이, 전압을 인가하기 위한 형성공정으로기판(20)에 하부전극과 기판사이의 절연을 위해 절연막(도시되지 않음)을 형성하고 제1전도층(21)을 형성한 후 제1전도층(21)과 절연층을 식각하여 전원이 공급될 하부전극을 형성한다. 여기서, 기판은 반도체 기판, 유리 또는 석영을 사용하고 전도층은 반도체층, 메탈층, 카본 또는 그라파이트를 사용한다.First, as shown in FIG. 3A, an insulating film (not shown) is formed on the substrate 20 to insulate the lower electrode and the substrate, and the first conductive layer 21 is formed in the forming process for applying a voltage. Thereafter, the first conductive layer 21 and the insulating layer are etched to form a lower electrode to which power is supplied. Here, the substrate uses a semiconductor substrate, glass or quartz, and the conductive layer uses a semiconductor layer, a metal layer, carbon or graphite.
이어서, 도 3b에 나타낸 바와 같이, 하부전극을 포함한 전체기판 표면에 제1희생층(23)을 형성하고 제1하부지지빔을 형성할 영역을 식각한 후 제2전도층(24)을 전체표면에 형성한 후 제2전도층(24)을 식각하여 기둥모양을 포함한 상부전극구조체를 형성한다. 여기서, 제1하부지지빔은 회전방향으로는 작은 저항강성을 갖도록하고, 수직방향으로는 상부전극구조체를 충분히 지지할 수 있도록 하는 형상을 가지며 수직방향 강성이 작으면 상부전극구조체와 기판이 고착하는 현상이 발생하므로 제1하부지지빔은 이러한 고착현상을 충분히 이길 수 있도록 충분한 수직방향 강성을 갖도록 단면과 형상을 형성한다.Subsequently, as shown in FIG. 3B, after forming the first sacrificial layer 23 on the entire substrate surface including the lower electrode and etching the region to form the first lower support beam, the second conductive layer 24 is formed on the entire surface. After the formation, the second conductive layer 24 is etched to form an upper electrode structure including a pillar shape. Here, the first lower support beam has a small resistance stiffness in the rotational direction, and has a shape that can sufficiently support the upper electrode structure in the vertical direction, and when the vertical rigidity is small, the upper electrode structure and the substrate are fixed. Since the phenomenon occurs, the first lower support beam forms a cross section and a shape so as to have sufficient vertical rigidity to sufficiently overcome this sticking phenomenon.
이어서, 도 3c에 나타낸 바와 같이, 상부전극구조체를 포함한 전체기판 표면에 제2희생층(25)을 형성하고 제2하부지지빔을 형성할 영역을 식각한 후 제3전도층(26)을 전체표면에 형성한 후 식각하여 회전스테이지를 형성한다.Subsequently, as shown in FIG. 3C, after forming the second sacrificial layer 25 on the entire substrate surface including the upper electrode structure and etching the region to form the second lower support beam, the entire third conductive layer 26 is formed. After forming on the surface and etched to form a rotating stage.
마지막으로, 도 3d에 나타낸 바와 같이, 제1 및 제2 희생층(23, 25)을 제거하여 다 자유도를 갖는 광 변조기를 형성한다.Finally, as shown in FIG. 3D, the first and second sacrificial layers 23 and 25 are removed to form an optical modulator having multiple degrees of freedom.
상기와 같은 본 발명은 마이크로 머시닝 기술에서 가장 약점인 희생층 제거시에 발생하는 상부층과 하부층과의 고착문제를 해결하기 위해 지지빔을 채용하고,다단계의 정전 가동구조체를 채용함으로써 회전변위를 비약적으로 높이며, 빛을 원하는 방향으로 분배하거나 여러 방향의 빛을 한 곳으로 모을 수 있는 장점이 있다.As described above, the present invention employs a support beam to solve the problem of adhesion between the upper layer and the lower layer, which occurs when the sacrificial layer is removed, which is the weakest point in the micromachining technology. It has the advantage of distributing the light in the desired direction or collecting light in multiple directions.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000059626A KR20020028566A (en) | 2000-10-10 | 2000-10-10 | Light Modulator and Method for Manufacturing the Same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000059626A KR20020028566A (en) | 2000-10-10 | 2000-10-10 | Light Modulator and Method for Manufacturing the Same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020028566A true KR20020028566A (en) | 2002-04-17 |
Family
ID=19692853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000059626A KR20020028566A (en) | 2000-10-10 | 2000-10-10 | Light Modulator and Method for Manufacturing the Same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20020028566A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR940016967A (en) * | 1992-12-04 | 1994-07-25 | 양승택 | Internal total reflection type semiconductor optical switch element. |
| US5387803A (en) * | 1993-06-16 | 1995-02-07 | Kulite Semiconductor Products, Inc. | Piezo-optical pressure sensitive switch with porous material |
| KR960026990A (en) * | 1994-12-19 | 1996-07-22 | 양승택 | Structure of Horizontally Moveable Optical Switch and its Manufacturing Method |
| KR0170997B1 (en) * | 1994-12-19 | 1999-02-01 | 양승택 | Structure of rotational/translational optical shutter and method thereof |
-
2000
- 2000-10-10 KR KR1020000059626A patent/KR20020028566A/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR940016967A (en) * | 1992-12-04 | 1994-07-25 | 양승택 | Internal total reflection type semiconductor optical switch element. |
| US5387803A (en) * | 1993-06-16 | 1995-02-07 | Kulite Semiconductor Products, Inc. | Piezo-optical pressure sensitive switch with porous material |
| KR960026990A (en) * | 1994-12-19 | 1996-07-22 | 양승택 | Structure of Horizontally Moveable Optical Switch and its Manufacturing Method |
| KR0170997B1 (en) * | 1994-12-19 | 1999-02-01 | 양승택 | Structure of rotational/translational optical shutter and method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6600201B2 (en) | Systems with high density packing of micromachines | |
| US6020215A (en) | Process for manufacturing microstructure | |
| US10483876B2 (en) | Electrostatically deflectable micromechanical device | |
| US6586841B1 (en) | Mechanical landing pad formed on the underside of a MEMS device | |
| JP5350339B2 (en) | Micro-electromechanical system and manufacturing method thereof | |
| US6767614B1 (en) | Multiple-level actuators and clamping devices | |
| JP2005510990A (en) | Multi-directional thermal actuator | |
| WO2004038819A2 (en) | Piezoelectric switch for tunable electronic components | |
| KR20010042510A (en) | Precision alignment and assembly of microlenses and microcolumns | |
| US6884732B2 (en) | Method of fabricating a device having a desired non-planar surface or profile and device produced thereby | |
| US20070039920A1 (en) | Method of fabricating nanochannels and nanochannels thus fabricated | |
| US20080157625A1 (en) | Development of a low driving-voltage micro scratch drive actuator by ultra-low resistivity silicon wafer | |
| JP2006159356A (en) | Piezoelectric driving type micro electro mechanical system device | |
| KR20170138947A (en) | A microelectromechanical device and a method of manufacturing a microelectromechanical device | |
| US6953704B2 (en) | Systems with high density packing of micromachines | |
| JP2009148878A (en) | Micro-electromechanical system and its manufacturing method | |
| JP2012135819A (en) | Mems device | |
| KR20020028566A (en) | Light Modulator and Method for Manufacturing the Same | |
| CN102543591B (en) | MEMS (micro-electro-mechanical systems) switch and manufacturing method thereof | |
| KR101549280B1 (en) | Micromechanical component having a slanted structure and corresponding production method | |
| KR20020028565A (en) | Light Modulator and Method for Manufacturing the Same | |
| JP2004502146A (en) | Electronic micro components and sensors and actuators incorporating the electronic micro components | |
| WO2013187267A1 (en) | Microstructure and method of manufacturing the same | |
| KR100356730B1 (en) | Device for Flat Panel Display and Method for Manufacturing the Same | |
| KR20020028569A (en) | Light Modulator and Method for Manufacturing the Same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| NORF | Unpaid initial registration fee |