KR20020009697A - Symmetrical Type Patch Antenna - Google Patents

Abstract

PURPOSE: A patch antenna is provided to reduce the size of antenna and achieve an improved efficiency and impedance match by arranging a pair of symmetric T or H-shaped patches. CONSTITUTION: A patch antenna comprises a patch(100) for radiating radio wave; a feeder line(110) for feeding power to the patch; a dielectric member(120) for expanding the impedance matching frequency band and reducing the size of the patch; a substrate(130) for feeder line arranged underneath the patch; a dielectric support member(140) for supporting the patch and the substrate; and a connector(150) for connection to an external system. The patch is constituted by a pair of symmetric T or H-shaped patches. The T-shaped patch includes a central portion(101a), and an extended portion(101b) formed at an end of the central portion.

Description

Symmetrical Patch Antenna

The present invention relates to a microstrip bi-symmetric patch antenna for communication, relay, and satellite reception, and more particularly, to configure a T-type or H-type patch in bi-symmetry, the maximum gain or directivity within a given space size It is directed to a bisymmetric patch antenna to implement performance.

In general, the microstrip patch antenna is a kind of antenna that has a lightweight, space-saving planar structure and can have the greatest gain and directivity in a given space. Its purpose is as a communication relay antenna, and its range of application is wide. However, in the case of the existing patch antenna, it is formed in a circular or rectangular shape, and when designed according to the frequency to be used, it is impossible to freely change the standard under the same conditions, thereby limiting the gain and directivity performance. If the condition is less than the design is not possible, even if already manufactured, there was a very difficult problem when changing the frequency.

In addition, in order to change the size of the patch antenna by maintaining a single mode polarization and efficiency for a given cross-sectional area, the dielectric between the ground plane and the patch must be changed to a medium having a high dielectric constant or a small medium. It has a dielectric constant and has various disadvantages that cannot be easily changed due to the limitations of materials on earth. There is a method using a ceramic dielectric having a high dielectric constant, but this has a problem that the price and processing cost of the raw material is relatively incomparable and technically not easy to replace various.

Accordingly, the present invention has been made to solve the above-mentioned conventional problems, the same specification and the same dielectric conditions in a space smaller than the manufacturable space of the patch to realize the maximum gain or directivity performance within a given space size It is an object of the invention to provide a pair-symmetric patch antenna to facilitate design and fabrication.

1 is a perspective view showing a bi-symmetric T-type patch antenna according to the present invention

Figure 2 is a side view of a bisymmetric T-type patch antenna according to the present invention

Figure 3 is a view from another side of the bi-symmetric T-type patch antenna according to the present invention

4 is a plan view of a bisymmetric T-type patch antenna according to the present invention;

Figure 5 is a cross-sectional current distribution in the patch of the bisymmetric T-type patch antenna according to the present invention

6 is a perspective view of a frequency and bandwidth change of the bi-symmetric T-type patch antenna according to the present invention

7 is a cross-sectional current distribution diagram of FIG.

8 is a perspective view according to another modification of the use frequency and bandwidth of the bi-symmetric T-type patch antenna according to the present invention

9 is a cross-sectional current distribution diagram of FIG.

10 is a perspective view of a bisymmetric H-type patch antenna according to the present invention;

11 is a cross-sectional current distribution diagram of FIG.

12 is a dual polarization bi-symmetric T-type patch antenna or circular polarization bi-symmetric T-type patch orthogonally arranged for dual polarization or circular polarization radiation according to the present invention Configuration diagram of the antenna

FIG. 13 is a block diagram of a cavity-backed bi-symmetric T-type patch antenna in order to further improve impedance matching of the bi-symmetric T-type patch antenna according to the present invention and further improve side lobe characteristics. FIG.

Figure 14 is a perspective view showing a one-dimensional array of bi-symmetric T-shaped patch antenna according to the present invention

15 is a perspective view showing a stereoscopic two-dimensional array of the bi-symmetric T-shaped patch antenna according to the present invention

* Explanation of Signs of Major Parts of Drawings *

100: patch

101,103,105: T-type patch

101a, 102a, 103a, 105a: center portion

101b, 102b, 103b, 105b: extension part

102: H type patch

110: feeder line

120: dielectric

130: substrate

140 support means

141: Bolt

142: nut

150: connector

160: blockade

In order to achieve the above object, the present invention provides a microstrip patch antenna for use in wireless communication, relay, and satellite reception.

Patches for radio wave radiation;

A feed line for feeding the patch;

A dielectric for extending the impedance matching frequency band or reducing the size of the patch;

A feed line substrate provided under the patch;

Dielectric support means for supporting the patch and the substrate for a feed line;

And a connector for connecting with an external system.

The patch may be formed in a bisymmetric T-type or H-type.

The T-type or H-type patch is characterized in that the orthogonal arrangement for the dual polarization or circular polarization radiation.

In addition, the T-type or H-type patch and the impedance matching is a broadband, characterized in that the support means as a conductor to shorten the size of the element in order to improve the side lobe characteristics.

In addition, the T-type or H-type patch and impedance matching is wideband, and the conductor rod is inserted from the feeder plate or from the top patch to improve the side lobe characteristics or reduce the size of the device.

In addition, the T-type or H-type patch and impedance matching is wideband, and all the side circumference in order to improve the side lobe characteristics or to reduce the size of the device is characterized by having a block.

The containment portion may have only a partial circumference.

In addition, the impedance matching and the resonant frequency can be adjusted by adjusting the height and position between the T-type or H-type patch and the feed line.

In addition, the impedance matching and the resonant frequency can be adjusted by replacing the dielectric between the T-type or H-type patch and the feed line.

In addition, it is possible to adjust the impedance matching and the resonance frequency by replacing the TT type or H type patch and feed line.

In addition, the impedance matching and the resonance frequency can be adjusted by changing the width and length of the T-type or H-type patches or the spacing between the T-type and H-type patches.

In addition, by inserting a variable or fixed capacitance capacitor between the T-type or H-type patch to adjust the impedance matching and the resonant frequency.

In addition, by inserting a variable or fixed capacitance capacitor at the end of the T-type or H-type patch it is possible to adjust the impedance matching and the resonant frequency.

In addition, a variable length conductor is attached to the end of the T-type or H-type patch to adjust impedance matching and resonant frequency.

In addition, by attaching or disposing a dielectric on the front or side of the patch to adjust the impedance matching and resonant frequency or to reduce the size of the patch.

In addition, the antenna having a T-type or H-type patch is arranged vertically, horizontally or three-dimensionally to increase the vertical, horizontal directivity.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view showing an embodiment according to the present invention, as shown, in the microstrip patch antenna used for wireless communication, relay and satellite reception, a patch 100 for radio wave radiation; A feed line 110 for feeding the patch 100; A dielectric 120 for extending the impedance matching frequency band or reducing the size of the patch; A feed line substrate 130 provided below the patch 100; Dielectric support means (140) for supporting the patch (100) and the feed line substrate (130); And a connector 150 for connecting to an external system.

The patch 100 may be formed of a bi-symmetric T-shaped patch 101 or H-type patch (102). The T-shaped patch 101 is arranged in two divided symmetrical forms, and an extension portion 101b is formed on one side of the central portion 101a and the central portion 101a, respectively.

In addition, as shown in Figure 6, another form of bi-symmetrical T-shaped patch 103 is formed, which is the structure in a state in which the central portion (103a) is extended, the extension portion (103b) of the one side is maintained as it is to be.

In addition, as shown in FIG. 8, another form of the bi-symmetric T-shaped patch 105 is formed, which is a state in which the central portion 105a is enlarged larger than the central portion 103a of the patch 103. The extension part 105b of one side is a structure of the state maintained as it is.

In addition, as shown in Figure 12, another form of bi-symmetrical T-shaped patch 107 is formed, divided into four patches, each of the central portion 107a and an extension portion 107b is formed on one side thereof. It is. This is orthogonal arrangement of T-shaped patches for bipolar or circularly polarized radiation. The same applies to the H type patch.

On the other hand, the bi-symmetric H-shaped patch 102, as shown in Figure 10, forming a divided patch form the center portion (102a) is formed horizontally, each of the extension portion (102b) is formed on one side .

In addition, the support means 140 may be a conductor to reduce impedance of the T-type or H-type patches 101 and 102 with a wide bandwidth and improve the side lobe characteristics. The support means 140 is a structure that can be fastened through the bolt 141 and the nut 142, and can be fastened using any similar conventional means such as support rods, pins, screws, and the like.

In addition, the connector 150 can be fastened with a screw while having conductivity, and any conventional means that can be fastened other than the above can be fastened.

In addition, the T- or H-type patch (101) 102 and impedance matching to the broadband, to improve the side lobe characteristics or to reduce the size of the device from the power supply board 130 or the top patch 100 It is the structure that the conductor rod was inserted from.

In addition, as shown in FIG. 13, all sides of the T- or H-type patch 101 (102) and impedance matching to improve the side lobe characteristics or reduce the size of the element to improve the bandwidth It may be blocked to provide a block 160.

The containment portion 160 may have only a partial circumference.

In addition, by adjusting the height and position between the T-type or H-type patch 101, 102 and the feed line 110 it is possible to adjust the impedance matching and the resonance frequency.

In addition, the impedance matching and the resonant frequency can be adjusted by replacing the dielectric 120 between the T- or H-type patches 101 and 102 and the feed line 110.

In addition, it is possible to adjust the impedance matching and the resonant frequency by replacing the patch 101, 102 and the feed line 110 of the TT type or H type.

In addition, the impedance matching and the resonant frequency can be adjusted by changing the width and length of the T- or H-type patches 101 and 102 or the spacing between the T- and H-type patches 101 and 102. .

In addition, by inserting a variable or fixed capacitor between the T-type or H-type patch (101, 102) it is possible to adjust the impedance matching and the resonant frequency.

In addition, by inserting a variable or fixed capacitor at the end of the T-type or H-type patch 101, 102 to adjust the impedance matching and the resonant frequency.

In addition, the variable length conductors are attached to the ends of the T- or H-type patches 101 and 102 to adjust the impedance matching and the resonant frequency.

In addition, by attaching or placing a dielectric on the front or side of the patch 101 (102) to adjust the impedance matching and the resonant frequency or to reduce the size of the patch.

In addition, the antenna having a T-type or H-type patch 101, 102 is arranged vertically, horizontally or three-dimensionally to increase the vertical, horizontal directivity.

1 to 4, the present invention configured as described above shows a bi-symmetric T-type patch antenna, respectively, for example, assuming that the horizontal and vertical lengths of the patch are smaller than half wavelength. When the radiating element is composed of a bi-symmetric T-type patch, as shown in FIG. 5, the undesired orthogonal polarization can be canceled by inducing the current distribution in the lateral direction to lower the resonance frequency and inducing in both directions. Therefore, the gain and directivity can be further improved by distributing the element over the entire area, inducing the current distribution over the entire opening area, and concentrating the current distribution on both top and bottom ends.

6 and 8, in order to increase the bandwidth, the central portions 103a and 105a of each patch 103 and 105 are widened, and as shown in FIG. By inducing the current over a longer length to 102, it is possible to further reduce the frequency or shorten the space.

In addition, by narrowing the center interval between the elements of the bi-symmetrical T-type or H-type patch to induce a C coupling between the elements to give a shortening effect, by inserting a capacitor in the center interval to give a shortening effect or can be a resonant frequency variable antenna. .

In addition, it is possible to easily change the antenna into a variable resonant frequency antenna by attaching a variable length conductor rod at the end of the anode end to change the resonant frequency, or by attaching a capacitor between the ends of the extension part of the anode end.

In addition, the support means 140 made of a dielectric is used as a conductor to induce a C coupling, or insert the conductor rods at positions facing each other from the substrate 130 at the bottom or the dielectric 120 at the top. As shown in FIG. 13, C coupling is induced, or as shown in FIG. 13, a blocking portion 160, which is a conductor plate, is formed on the side surface between the substrate 130 and the dielectric 120 to induce LC coupling to match broadband impedance. It is very suitable for the purpose of making this.

In addition, as shown in FIG. 12, the bi-symmetrical T-shaped patch 107 is divided into four and formed into two pairs, and orthogonally arranged around the center to use each polarized wave as a different channel for dual polarization, or a feed line By using a furnace 110 or a hybrid, a 90 ° phase difference is given to the two pairs, thereby enabling communication, relay, broadcasting, and satellite reception with circular polarization.

In addition, as shown in Figs. 14 and 15, when an arbitrary three-dimensional array is used to increase the gain and directivity, the interval for maximum performance is 0.5 wavelength, when vertically arranged using vertical polarization, Due to the limitation of the present invention, in the past, the spacing of the array or the zigzag array form a gain, directivity, and a decrease in productivity. However, in the present invention, a bi-symmetric T-type patch array antenna is configured to maximize the gain and Directivity can be implemented.

As described above, the present invention configures a bisymmetric T-type or H-type patch for radio wave radiation in a microstrip patch antenna used for communication, relay, and satellite reception to adjust current distribution and C-coupling of the antenna aperture. It is possible to adjust the resonant frequency, thereby minimizing the size of the conventional patch antenna and realizing excellent efficiency and impedance matching, and by using the space of the antenna which is not used by the conventional patch antenna as the radiated area of the antenna, Even high efficiency can be achieved.

In addition, by adjusting the width of each central element of bi-symmetrical T- or H-type patch, the width of the bottom surface, and the small gap on both sides, the C-coupling of the elements can be changed to adjust the frequency band to be used. It is possible.

In addition, in the case of the already designed or manufactured antenna, it is used to match the frequency of other uses, compared to the conventional patch antenna is very economical by recycling the inventory very easily, it is possible to reduce the development cost.

Claims (18)

In microstrip patch antenna used for wireless communication, relay and satellite reception, Patches for radio wave radiation; A feed line for feeding the patch; A dielectric for extending the impedance matching frequency band or reducing the size of the patch; A feed line substrate provided under the patch; Dielectric support means for supporting the patch and the substrate for a feed line; And a connector for connecting to an external system. The method of claim 1, The patch is a bi-symmetrical patch antenna, characterized in that formed in a bi-symmetric T or H type. The method of claim 2, A bi-symmetric patch antenna, characterized in that the T-type or H-type patch can be arranged orthogonal to the bipolar or circular polarized radiation. The method according to claim 1 or 2, A bisymmetrical patch antenna, characterized in that the support means is used as a conductor to shorten the size of the device in order to improve impedance and sidelobe characteristics of the T-type or H-type patch. The method of claim 4, wherein The support means is a bi-symmetric patch antenna, characterized in that consisting of a bolt and a nut. The method of claim 4, wherein The support means is a bi-symmetric patch antenna, characterized in that the support rod and pin can be configured. The method according to claim 1 or 2, A bi-symmetrical patch characterized in that the conductors are inserted from the feeder plate or from the top patch to improve the side lobe characteristics or shorten the size of the T-type or H-type patch and impedance matching. antenna. The method according to claim 1 or 2, A bi-symmetric patch antenna, characterized in that the T-type or H-type patch and impedance matching to the broadband, and to block all the side circumference in order to improve the side lobe characteristics or shorten the size of the device. The method of claim 8, The blockade is a bi-symmetric patch antenna, characterized in that it can form only a portion of the circumference. The method according to claim 1 or 2, A bi-symmetric patch antenna, characterized in that the impedance matching and the resonant frequency can be adjusted by adjusting the height and position between the T-type or H-type patch and the feed line. The method according to claim 1 or 2, A bi-symmetric patch antenna, characterized in that the impedance matching and the resonant frequency can be adjusted by replacing the dielectric between the T-type or H-type patch and the feed line. The method according to claim 1 or 2, The symmetric patch antenna, characterized in that to adjust the impedance matching and resonant frequency by replacing the TT or H-type patch and feed line. The method of claim 2, A bisymmetric patch antenna, characterized in that the impedance matching and the resonant frequency can be adjusted by changing the width and length of the T-type or H-type patches or the spacing between the T-type and H-type patches. The method of claim 2, A bi-symmetric patch antenna, characterized in that the impedance matching and resonant frequency can be adjusted by inserting a variable or fixed capacitor between the T-type or H-type patch. The method of claim 2, A bi-symmetric patch antenna, characterized in that the impedance matching and the resonant frequency can be adjusted by inserting a variable or fixed capacitance capacitor at the end of the T-type or H-type patch. The method of claim 2, A bi-symmetric patch antenna characterized in that the variable length conductor is attached to the end of the T-type or H-type patch to adjust the impedance matching and the resonant frequency. The method of claim 2, A bisymmetric patch antenna, characterized in that to attach or arrange a dielectric on the front or side of the patch to adjust the impedance matching and resonant frequency or to reduce the size of the patch. The method of claim 2, And an antenna having the T-type or H-type patch, vertically, horizontally or three-dimensionally, to increase vertical and horizontal directivity.