KR20020009368A - Static control device with ion generation control - Google Patents

Static control device with ion generation control Download PDF

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Publication number
KR20020009368A
KR20020009368A KR1020000043232A KR20000043232A KR20020009368A KR 20020009368 A KR20020009368 A KR 20020009368A KR 1020000043232 A KR1020000043232 A KR 1020000043232A KR 20000043232 A KR20000043232 A KR 20000043232A KR 20020009368 A KR20020009368 A KR 20020009368A
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KR
South Korea
Prior art keywords
ions
positive
control
negative
ion
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KR1020000043232A
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Korean (ko)
Inventor
우종태
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윤태호
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Priority to KR1020000043232A priority Critical patent/KR20020009368A/en
Publication of KR20020009368A publication Critical patent/KR20020009368A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67276Production flow monitoring, e.g. for increasing throughput

Abstract

PURPOSE: An electrostatic control apparatus having an ion control function is provided to handle a balance between positive ions and negative ions by controlling the amount of ions according to a loader portion and an installing height of an electrostatic control apparatus. CONSTITUTION: An electrostatic control apparatus has a positive ion control volume(101) and a negative ion control volume(102). The positive ion control volume(101) and the negative ion control volume(102) can be controlled by using a screwdriver. The electrostatic control apparatus is installed according to environment. A positive emitter(103) and a negative emitter(104) are formed at a lower portion of the electrostatic control apparatus in order to generate positive ions and negative ions, respectively. A positive ion error lamp(105) and a negative ion error lamp(106) are used for indicating abnormal outputs of the positive ions and the negative ions, respectively. A connector jack(107) is formed at both sides of the electrostatic control apparatus. The connector jack(107) is connected with a controller.

Description

이온발생량 조절기능을 가진 정전기제어장치{.}Static Control Device with Ion Generation Control

본 발명은 반도체공장이나 엘씨디(LCD)공장등에서 정전기방지 장치로 쓰이는 정전기제어장치에 관한 것으로 상세하게는 정전기제어장치의 이온량 조절기능에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic control device used as an antistatic device in a semiconductor factory or an LCD factory, and more particularly, to an ion amount control function of an electrostatic control device.

기존의 정전기제어장치는 양이온과 음이온양을 일정하게 고정적으로 나오게 되어있어 정전기를 방지하는데 가장 중요한 양이온과 음이온의 바란스 조정이 어려웠다. 특히 반도체 공장이나 엘씨디공장등에서는 헤파필터를 통해 공기를 공급하고 있는데 정전기제어는 이 공기의 기류를 이용하여 양이온과 음이온양을 잘 맞추어 주어야만 정전기를 방지하는데 그 효과가 크다.Existing static electricity control device has a constant fixed amount of positive and negative ions, it is difficult to adjust the balance of the positive and negative ions most important to prevent static electricity. In particular, semiconductor factories and LCD factories are supplying air through HEPA filters. Static electricity control is effective in preventing static electricity only when the amount of positive and negative ions is properly adjusted using the airflow of the air.

정전기제어장치의 설치는 실제 작업하는 작업대에서 평균적으로 1메터 이상 떨어져 있는데, 이온량이 정전기제어장치에서 실제 작업면에 도달하면서 많은 량이 중화되어 없어지기 때문에 정전효과를 높이기 위해서는 거리(높이)에 따라 이온량을 적절히 맞추어 주는일이 중요한 일이다. 그런데 기존 제품에서는 이온량을 적게 많게는 조절 못하고 양이온과 음이온이 나오는 시간만을 조절하게 되어있다.The installation of the static electricity control device is more than 1 meter away from the working table on average, and the amount of ions is increased according to the distance (height) in order to increase the electrostatic effect because the amount of ions is neutralized and disappeared from the static electricity control device. It is important that the correct fit is made. By the way, the existing product is not to control the amount of ions less, but only to control the time the cation and anion out.

본 발명은 시간 조절은 물론 이온량을 거리 및 높이에 따라 마음대로 조절할수 있도록 고안된 것으로 바란스 조정을 용이하게 할수있어 정전제어능력을 극대화시킨 것이다.The present invention is designed to adjust the amount of ions at will according to distance and height, as well as time adjustment, and can easily balance adjustment to maximize the power failure control ability.

본 발명은 위와 같이 이온량을 자유롭게 조절할수 있도록 고압발생장치의 고압출력을 외부에서 가변할수있도록 고안한 것이다. 정전기제어장치를 설치시 로더(Loder)부분과 정전기제어장치의 설치 높이에 따라 이온량을 조절해서 양이온과 음이온의 바란스를 조정할수 있도록 볼륨장착 또는 바란스를 원격제어할수 있도록 고안한것이다.The present invention is designed to be able to vary the high pressure output of the high pressure generator from the outside to freely control the amount of ions as described above. It is designed to control volume installation or balance remotely so that the balance of positive and negative ions can be adjusted by adjusting the amount of ions according to the loader part and the installation height of the static controller when installing the static electricity control device.

[도 1]은 본 발명의 외관이다.1 is an appearance of the present invention.

[도 2]는 본 발명의 내부기능 블록도 이다.2 is an internal functional block diagram of the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

101 : 양이온 조절볼륨101: cation control volume

102 : 음이온 조절기능102: negative ion control function

103 : 양이온 에미터103: cationic emitter

104 : 음이온 에미터104: Anion Emitter

105 : 양이온 에러 램프105: cation error ramp

106 : 음이온 에러 램프106: negative ion error lamp

107 : 콘트롤러 연결 커넥터107: controller connection connector

201 : 전류 피드백 회로201: current feedback circuit

202 : 이온조절회로202: ion control circuit

203 : 콘트롤러203 controller

204 : 고압전원장치204: high voltage power supply

205 : 전류 전압 검출회로205: current voltage detection circuit

206 : 양이온 출구206: cation outlet

207 : 양이온 조절회로207: cation control circuit

208 : 음이온 조절회로208 anion control circuit

도1은 본 고안에서 제시한 기능을 갖춘 정전기제어장치의 외관이다. 본 고안에서 가장 핵심적인 양이온 조절(101)과 음이온조절 볼륨(102)을 상측에 홀을 뚫어 외부에서 드라이버로 조절할수 있도록 되어있다. 정전기제어장치를 설치시 주변환경에 맞추어 설정한후 홀을 고무마개로 닫도록 만들었다. 하측에는 양이온이 발생되는 양이온 에미터(103)와 음이온이 발생되는 음이온 에미터(104)가 서로 교대로 설치되어 있다. 이온출력량에 변화가 왔을 때 에러 불이 들어오도록 양이온 에러램프(105)와 음이온 에러램프(106)가 있고 장치의 양쪽에는 콘트롤러에 연결할수 있는 커넥터잭으로 구성되어 있다.1 is an appearance of an electrostatic control device having a function proposed in the present invention. In the present invention, the most important cation control 101 and anion control volume 102 are to be controlled by a driver from the outside through a hole in the upper side. When the static electricity control device is installed according to the surrounding environment, the hole is closed with a rubber stopper. On the lower side, a cation emitter 103 for generating cations and an anion emitter 104 for generating anions are alternately provided. There is a cation error lamp 105 and an anion error lamp 106 so that an error light comes on when there is a change in the ion output amount, and both sides of the apparatus are configured with connector jacks that can be connected to a controller.

도2는 정전기제어장치의 내부 기능을 나타내는 블록도이다. 양이온 발생경로는 콘트롤러(203)에서 신호를 받아 고압발생장치(204)를 구동시켜 양이온에 미터(206)에서 코로나 방전현상에 의해 양이온이 방출되게 되어있다. 이때 방출되는 이온 조절회로(202)에서 조절할수 있도록 되어 있는데 조절시는 볼륨으로도 할수 있고 원격제어 할수 있도록 되어 있다.2 is a block diagram showing the internal functions of the static electricity control device. The cation generation path receives a signal from the controller 203 to drive the high pressure generator 204 so that the cation is released by the corona discharge phenomenon from the meter 206 to the cation. At this time, the ion control circuit 202 is to be controlled to be controlled, but it is also possible to control the volume and remote control.

도3은 고압발생장치의 블록도로써 고전압트랜스에서 발생되는 고전압을 이온량조절부(301)에서 조정할수 있도록 되어있다.3 is a block diagram of a high pressure generator so that the high voltage generated in the high voltage transformer can be adjusted by the ion amount control unit 301.

본 발명은 기존 제품에서는 없었던 이온량 조절기능을 만듬으로써 정전기 제어장치를 라인업시 조정을 용이하게 할수 있고 정전기 방지 효과를 극대화 시킬수 있다.The present invention can be easily adjusted during the lineup of the static electricity control device by making the ion amount adjustment function that was not available in the existing products and can maximize the antistatic effect.

기존 제품은 이온량 조절기능이 없어서 양이온과 음이온 각각의 동작 시간만 조절할수 있기에 원하는 정전제어사양(100V이하) 조건을 만족시키는데 너무나 많은 시간이 소요되었을뿐더러 조정하기도 어려웠다. 그러나 본 고안품은 이온량을 마음대로 조절할수 있어 쉽게 정전기제어 사양을 만족시킬수 있다.Existing products do not have the function of adjusting the amount of ions, so only the operating time of each cation and anion can be adjusted. However, the present invention can adjust the amount of ions at will and easily satisfy the static electricity control specification.

Claims (3)

정전기제어장치에서 양이온과 음이온량을 조절할수 있도록 고전압 출력부 및 입력부에 가변 장치를 한것.Variable voltage device is installed in the high voltage output part and the input part to control the amount of positive and negative ions in the static electricity control device. 정전기제어장치에서 양이온과 음이온량을 조절할수 있도록 고전압을 원격제어한 것.Remote control of high voltage to control the amount of positive and negative ions in electrostatic controller. 정전기제어장치의 고전압트랜스 유니트에 고전압출력 제어용 가변 볼륨을 설치한 것.A variable volume for high voltage output control is installed in the high voltage transformer unit of the static electricity control device.
KR1020000043232A 2000-07-26 2000-07-26 Static control device with ion generation control KR20020009368A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100894256B1 (en) * 2007-05-17 2009-04-21 미래디지털(주) Ion generator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4809127A (en) * 1987-08-11 1989-02-28 Ion Systems, Inc. Self-regulating air ionizing apparatus
US4974115A (en) * 1988-11-01 1990-11-27 Semtronics Corporation Ionization system
KR20010014473A (en) * 1999-02-24 2001-02-26 가부시키가이샤 다카야나기겐큐쇼 Static eliminator
KR20010034145A (en) * 1998-01-14 2001-04-25 이온 시스템즈, 인크. Self-balancing shielded bipolar ionizer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4809127A (en) * 1987-08-11 1989-02-28 Ion Systems, Inc. Self-regulating air ionizing apparatus
US4974115A (en) * 1988-11-01 1990-11-27 Semtronics Corporation Ionization system
KR20010034145A (en) * 1998-01-14 2001-04-25 이온 시스템즈, 인크. Self-balancing shielded bipolar ionizer
KR20010014473A (en) * 1999-02-24 2001-02-26 가부시키가이샤 다카야나기겐큐쇼 Static eliminator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100894256B1 (en) * 2007-05-17 2009-04-21 미래디지털(주) Ion generator

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