KR20020002933A - Lithography apparatus of semiconductor device - Google Patents

Abstract

PURPOSE: An exposure apparatus of a semiconductor device is provided to increase a NET Die by comprising 4 blades movable in X-directional and 4 blades movable in Y-directional. CONSTITUTION: An exposure apparatus of a semiconductor device is composed of 8 blades. In a first and a second directional corresponding to an up and down of a reticle at centering a region in which the reticle is placed, the first and the second blade(X1)(X2) are movable in X-directional at a first directional, the third and the fourth blade are movable in X-directional at a second directional. In a third and a fourth directional corresponding to a left and right of a reticle, the fifth and the sixth blade are movable in Y-directional at a third directional, the seventh and the eighth blade are movable in Y-directional at a fourth directional, and a light at which the blade is placed, is cutoff.

Description

Exposure apparatus of semiconductor element {LITHOGRAPHY APPARATUS OF SEMICONDUCTOR DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for manufacturing a semiconductor device, and more particularly, to an exposure apparatus for a semiconductor device in which a blade is configured by four blades moving in the X direction and four blades moving in the Y direction to increase the NET DIE.

In general, a wafer for manufacturing a semiconductor device is repeatedly subjected to processes such as cleaning, diffusion, photography, etching, and ion implantation, and equipment for performing the corresponding process is used for each process.

The photo process is a process of forming a pattern on a wafer, and is a process of forming an image of a mask on the wafer using a photosensitive material.

The photographing process evaluates the process capability according to how precisely the pattern of the mask is desired and the pattern of the mask is formed.

The photographing process can be generally divided into four stages such as photoresist coating, alignment and exposure, development and inspection, and a stepper is a facility for performing double alignment and exposure.

In particular, a new exposure method is required to increase the NET Die in the exposure step.

Hereinafter, a blade of the exposure apparatus of the prior art will be described with reference to the accompanying drawings.

1 is a blade configuration diagram of a conventional exposure apparatus.

In the exposure apparatus of the prior art, as shown in Fig. 1, the blade of the exposure equipment is composed of four, where X1, X2 is to the left and right, Y1, Y2 moves up and down, the area to be exposed to the reticle (10) It serves to distinguish the areas that do not.

As devices become more integrated, the line width (CD) also becomes smaller.

Accordingly, in the field exposed to the wafer edge region, the die and the dies covering the outer region of the wafer are deformed.

If the dies are deformed in this way, they may fail or lift during the mask process or the post process, causing defects.

This will provide a cause for reducing the field.

In order to eliminate this problem, the die that spans the wafer and the outside of the wafer in one field is not exposed by the blade. However, when one field is 4 die or more, the four blades are limited, resulting in loss of the NET die. Coming.

The exposure apparatus of such a prior art semiconductor element has the following problems.

In the semiconductor device manufacturing process, four blades are used to expose only the necessary portion of the reticle in the exposure equipment used in the lithography field, so that the user cannot freely process the desired portion.

This is a die that can be saved in the wafer area, which can cause defects, which causes the problem of reducing the NET die due to unexposure.

The present invention has been made in order to solve the problem of the exposure apparatus of the prior art semiconductor device, it is possible to increase the NET DIE by configuring the blade consisting of four blades moved in the X direction and four blades moved in the Y direction It is an object to provide an exposure apparatus of a semiconductor element.

1 is a block diagram of a conventional exposure apparatus

2A and 2B are blade configuration diagrams of an exposure apparatus according to the present invention.

3 is a block diagram showing an exposure method using a blade according to the present invention

4 is a configuration diagram for explaining an increase in an effective die at a wafer edge portion at the time of exposure using a blade according to the present invention;

-Explanation of symbols for the main parts of the drawing-

21. Reticle 22a.22b.22c.22d. X direction moving blade

23a.23b.23c.23d. Y direction moving blade

40. Die Located at Wafer Edge

The exposure apparatus according to the present invention for achieving the above object is configured in the first direction in the first and second directions corresponding to the upper and lower sides of the reticle, the first and the first, 3rd and 4th blades X3 and X4 which are comprised in 2nd blades X1 and X2, and are movable in a X direction; In a corresponding 3rd and 4th direction in the left-right direction of the said reticle, 3rd The fifth and sixth blades (Y1) (Y2) configured to move in the Y direction and the seventh and eighth blades (Y3) (Y4) configured in the fourth direction to move in the Y direction and the blades It is characterized in that light-shielding is performed at a portion located.

Hereinafter, an exposure apparatus of a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings.

2A and 2B are diagrams illustrating the blades of the exposure apparatus according to the present invention, and FIG. 3 is a diagram illustrating the exposure method using the blades according to the present invention.

4 is a configuration diagram for explaining an increase in the effective die in the wafer edge portion at the time of exposure using the blade according to the present invention.

As shown in FIG. 2, the first, second, third and fourth blades X1 which may move in the X direction in the first and second directions corresponding to the top and bottom of the reticle 21 around the region where the reticle 21 is located. (X2) (X3) (X4) 22a (22b) 22c (22d) is comprised.

And fifth, six, seven, and eight blades Y1 (Y2), Y3, Y4, 23a, and 23b that are movable in the Y direction in the corresponding third and fourth directions in the left and right directions of the reticle 21. FIG. (23c) 23d is comprised.

Here, the first and second blades X1, X2, 22a and 22b are envisioned in the first direction, and the third and fourth blades X3, X4, 22c and 22d are configured in the second direction. do.

The fifth and sixth blades Y1 (Y2) 23a and 23b are configured in the third direction, and the seventh and eighth blades Y3 and Y4 are configured in the fourth direction.

And the shape of the blade has a straight form on the side centered on the reticle (21).

In this way, eight blades can be configured to expose only the desired area of the reticle so that X1 ~ 4 moves up and down and Y1 ~ 4 moves left and right to selectively expose only the desired die.

As shown in FIG. 2B, the blades configured in one direction are configured to overlap each other with a predetermined size.

This is to completely block the incident light.

For example, when only 3 dies are exposed in a reticle composed of 4 dies and 1 die is not desired to be exposed as shown in FIG. 3, 3 dies of 4 dies can be exposed by configuring 8 blades.

That is, when the die which is not exposed is located at the lower left side, the third blade X3 is shifted upward to block the die of the region.

In the case of exposing with a reticle composed of 4 dies, the area 40 indicated by the circle in FIG. 4 is caught by the wafer edge area and deforms the pattern to cause defects in the post-process. Exposure is performed by covering X-DEC, Y-DEC, etc. in which no pattern is formed.

In the exposure apparatus having four blades, the processing is impossible, so only 2 dies are processed to lose 1 die, but in the exposure apparatus of the present invention in which the blades are composed of eight, all cases are possible.

This effect becomes larger as the number of dies on the reticle increases.

Such an exposure apparatus of a semiconductor device according to the present invention has the following effects.

By configuring eight blades of the exposure apparatus, the die to be exposed on the reticle and the die processing not to be exposed can be freed.

This has the effect of increasing the NET die by selectively blinding the die across the wafer edge using any one of eight blades.

Claims (3)

The first and second blades X1 and X2, which are configured in the first direction and move in the X direction, in the first and second directions corresponding to the top and bottom of the reticle around the region where the reticle is located, and are configured in the second direction. Third and fourth blades X3 and X4 that are movable in the X direction; The fifth and sixth blades Y1 and Y2 may be configured in the third direction and move in the Y direction in the third and fourth directions corresponding to the left and right directions of the reticle, and may move in the Y direction. An exposure apparatus of a semiconductor element comprising a seventh and eighth blade (Y3) and a fourth blade (Y4), wherein light shielding is performed at a portion where the blade is positioned. The semiconductor device exposure apparatus according to claim 1, wherein the shape of each blade has a straight shape on the side of the reticle. The exposure apparatus of claim 1, wherein the blades configured in one direction are configured to overlap each other with a predetermined size.