KR20020001268A - Ion implanting system - Google Patents

Abstract

PURPOSE: An ion implanter is provided to extend a lifetime of an ion source and to prevent unnecessary increase of cost, by remarkably reducing damage caused by generating excessive ion beams at the ion source to compensate for the loss between the ion source and a process chamber. CONSTITUTION: An ion source(10) generates an ion beam. The first analyzer analyzes the mass of the ion beam generated from the ion source. The first resolving aperture(40) focuses the ion beam passing through the first analyzer. The second analyzer analyzes the mass of the ion beam passing through the first resolving aperture. The process chamber(60) implants the ion beam passing through the second analyzer into a semiconductor wafer.

Description

Ion implantation device {ION IMPLANTING SYSTEM}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing equipment, and more particularly, to an ion implantation apparatus for implanting ions into a semiconductor wafer.

In the ion implantation part, which is one of the semiconductor manufacturing processes, facilities are distinguished according to the dose and energy. When the ion band is implanted into the wafer, if the dose band is 1.0E14 or more, it proceeds under a high current environment.

VARIAN's "SHC_80 MACHINE" is a high-current facility that differs from other high-current devices in several ways. Conventional high current equipments load 13 wafers onto a disk called disk and ion implantation at the same time, whereas the "SHC_80 MACHINE" implants ions into only one wafer during one process. Is a single process type. In addition, the conventional high current equipment is a spot beam type that injects ions into the wafer as a beam having a small beam size, but "SHC_80 MACHINE" uses ions to the wafer using a wide beam. The scan system only performs a Y scan by air bearing.

As such, in the "SHC_80 MACHINE" using the wide beam, the uniformity of the wide beam is very important. This is because the amount of impurities injected into the wafer varies when the current of the beam having a width of 14 inches is not constant.

1 is a plan view of "SHC_80 MACHINE" by VARIAN.

Referring to FIG. 1, the movement path P of the ion beam is as follows. The beam generated by the ion source 10 passes through a manipulator 20, a 90 ° analyzer 30, a resolving aperture 40 and a 70 ° analyzer 50 in order. Reaches 60.

The process chamber 60 checks the uniformity of the beam and, if the beam uniformity is not good, adjusts the uniformity with the ROD and the multipole lens mounted on the 70 ° analyzer 50. .

In the conventional ion implantation apparatus as described above, since the beam generated in the ion source 10 reaches the process chamber 60, the beam uniformity is inspected and the uniformity is adjusted. It is very important to allow the beam to reach the process chamber 60 while remaining uniform.

"SHC_80 MACHINE" uses ASH3 or BF3 as process gas. In the case of ASH3 gas, the current of the ion beam generated in the ion source 10 is approximately 25 mA, and the current of the beam reaching the setup cup located behind the resolving aperture 40 is approximately 10 mA. And the current of the ion beam reaching the process chamber 60 is 8 mA.

In the case of BF3 gas, more beam losses occur than ASH3 gas. The ion beam current of the BF3 gas generated in the ion source 10 is approximately 35 mA, but the current of the beam reaching the setup cup located behind the resolving aperture 40 is about 8 mA, and the process chamber 60 The ion beam reaching 6 becomes 6 mA.

As such, the loss of the ion beam generated in the ion source 10 occurs mostly before reaching the resolving aperture 40. This is because there is no device for focusing the ion beam until the ion beam generated at the ion source 10 reaches the resolving aperture 40.

Therefore, in order for the desired level of beam to reach the process chamber, a larger amount of ion beam must be produced in the ion source 10. This accelerates the degradation of the PART's used inside the source head, causing frequent P.M. Moreover, the shortening of the lifetime of the PART'S incurs the cost loss of replacing the PART'S.

Thus, there is a need for an apparatus to minimize the loss of the beam generated at ion source 10 while reaching the process chamber.

Accordingly, an object of the present invention has been proposed to solve the above-mentioned problems, and to provide an ion implantation apparatus capable of minimizing beam loss between an ion source and a process chamber.

1 is a plan view of "SHC_80 MACHINE" by VARIAN Corporation;

2 is a plan view of an ion implantation apparatus according to a preferred embodiment of the present invention; And

3 is a conceptual diagram illustrating an ion beam migration path for easy understanding.

* Description of the symbols for the main parts of the drawings *

10: ion source 20: control panel

30: 90。 Analyzer 40: Resolving Aperture

42a: left electrode plate 42b: right electrode plate

44a: upper electrode plate 44b: lower electrode plate

50: 70。 Analyzer 60: Process Chamber

According to a feature of the present invention for achieving the object of the present invention as described above, the ion implantation device comprises: an ion source for generating an ion beam, a first analyzer for analyzing the mass of the ion beam generated in the ion source, A resolving aperture focusing the ion beam passing through the first analyzer, a second analyzer analyzing the mass of the ion beam passing through the first resolving aperture, and an ion beam passing through the second analyzer on the semiconductor wafer It includes a process chamber for injecting. The ion implantation device is disposed between the first analyzer and the resolving aperture, and the first and second vertically facing each other with the beam interposed therebetween for focusing the beam passing through the first analyzer. Third and fourth electrodes disposed between an electrode plate, the resolving aperture and the second analyzer, and horizontally facing each other with the beam interposed therebetween for focusing the beam passing through the resolving aperture Includes more editions.

The ion implantation apparatus having the configuration as described above can minimize the beam loss phenomenon between the ion source and the process chamber.

(Example)

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to FIGS. 2 to 3.

FIG. 2 is a plan view of an ion implantation apparatus according to a preferred embodiment of the present invention, and FIG. 3 is a conceptual view showing an ion beam movement path for easy understanding.

As shown in FIGS. 2 and 3, the ion implantation apparatus 100 includes a left electrode plate 42a, a right electrode plate 42b, and an upper electrode plate 44a at "SHC_80 MACHINE" of VARIAN Co., Ltd. shown in FIG. And the lower electrode plate 44b.

The left and right electrode plates 42a and 42b are disposed between a 90 ° analyzer 30 and a resolving aperture 40, and the upper and lower electrode plates 44a and 44b are It is positioned between the resolving aperture 40 and the 70 ° analyzer 50.

The movement path P of the ion beam is as follows. Beams generated from the ion source 10 are manipulator 20, 90 ° analyzer 30, left and right electrode plates 42a, 42b, resolving aperture 40, upper and lower electrode plates. To the process chamber 60 via the fields 44a and 44b and the 70 ° analyzer 50 in order.

The left and right electrode plates 42a and 42b are disposed in front of the resolving aperture 40 to allow the ion beam to be electrically focused before reaching the resolving aperture 40.

Since the left and right electrode plates 42a and 42b prevent the blow up of the beam, the ion beam provided to the resolving aperture 40 has much less loss than the conventional one. .

In addition, since the ion beam passing through the resolving aperture 40 passes through the upper and lower electrode plates 44a and 44b, the blow-up phenomenon of the ion beam is suppressed to the maximum.

As described above, the left and right electrode plates 42a and 42b and the upper and lower electrode plates 44a and 44b are respectively provided at the front and rear ends of the resolving aperture 40 to minimize beam loss. Can be.

Therefore, damage caused by generating excessive ion beams in the ion source 10 can be significantly reduced to compensate for the loss between the ion source 10 and the process chamber 60. As a result, the lifetime of the ion source 10 can be extended, and unnecessary cost increase can be prevented.

While the invention has been described using exemplary preferred embodiments, it will be understood that the scope of the invention is not limited to the disclosed embodiments. Rather, the scope of the present invention is intended to include all of the various modifications and similar configurations. Accordingly, the claims should be construed as broadly as possible to encompass all such modifications and similar constructions.

According to the present invention as described above, in order to compensate for the loss between the ion source and the process chamber, the damage caused by generating an excessive ion beam in the ion source can be significantly reduced. As a result, the lifetime of the ion source can be extended, and unnecessary cost increase can be prevented.

Claims (1)

In the ion implantation device: An ion source for generating an ion beam; A first analyzer for analyzing the mass of the ion beam generated in the ion source; A resolving aperture focusing the ion beam passing through the first analyzer; A second analyzer for analyzing the mass of the ion beam passing through the first resolving aperture; And A process chamber for implanting an ion beam through the second analyzer into a semiconductor wafer; First and second electrode plates disposed between the first analyzer and the resolving aperture and vertically facing each other with the beam interposed therebetween for focusing the beam passing through the first analyzer; A third and fourth electrode plate disposed between the resolving aperture and the second analyzer and horizontally facing each other with the beam interposed therebetween for focusing the beam passing through the resolving aperture. Ion implantation apparatus comprising a.