KR200174033Y1 - Electrostatic chuck for fabricating semiconductor - Google Patents
Electrostatic chuck for fabricating semiconductor Download PDFInfo
- Publication number
- KR200174033Y1 KR200174033Y1 KR2019970031191U KR19970031191U KR200174033Y1 KR 200174033 Y1 KR200174033 Y1 KR 200174033Y1 KR 2019970031191 U KR2019970031191 U KR 2019970031191U KR 19970031191 U KR19970031191 U KR 19970031191U KR 200174033 Y1 KR200174033 Y1 KR 200174033Y1
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- electrostatic chuck
- wafer
- cooling
- cooling holes
- gas
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Abstract
본 고안은 웨이퍼에 냉각가스를 분사하는 냉각공과 저부면에 형성된 저장부가 상호 일대일로 연통되도록 하는 웨이퍼의 건식각용 정전척에 관한 것으로 종래의 정전척은 중앙부위에서는 냉각공과 저장부가 상호 일대일 대응되어 연통되나 외주연 끝단부분에서는 두 개의 냉각공이 하나의 공급관으로 연통되는 한편 정전척 상부면에 형성된 냉각공이 불규칙한 간격을 이루며 천공되므로써 웨이퍼의 냉각속도 및 냉각 균일도가 웨이퍼의 부분별로 차이가 발생하여 과소식각되거나 또는 과대식각되어 반도체의 특성을 저하시키는 문제점이 있었던바 본 고안은 정전척의 표면에 형성되는 냉각공이 저장부에 상호 일대일 대응되어 연통되도록 하는 한편 냉각공이 정전척의 전체표면에 균일하게 분포하도록 근접한 어느 냉각공을 연결하더라도 정삼각형 구도로 배열되어 균일하게 냉각가스가 분사되어 냉각가스의 분사량 및 압력을 일정하게 유지하므로써 웨이퍼의 냉각속도를 균일하게 하고 이에따라 웨이퍼의 균일한 식각층을 형성하는 잇점이 있는 웨이퍼의 건식각용 정전척이다.The present invention relates to a dry etch electrostatic chuck of a wafer which allows a cooling hole for injecting cooling gas to the wafer and a storage portion formed on the bottom surface thereof in one-to-one communication with a conventional electrostatic chuck. In the end of the outer circumference, two cooling holes are communicated with one supply pipe while the cooling holes formed on the upper surface of the electrostatic chuck are perforated at irregular intervals. The present invention has a problem of deteriorating the characteristics of the semiconductor by over-etching or over-etching the present invention. Equilateral triangle It is a dry electrostatic chuck for wafers that has the advantage of uniformly cooling the wafers by uniformly injecting the cooling gas and keeping the injection gas pressure and pressure uniform, thus forming a uniform etching layer of the wafer. .
Description
본 고안은 웨이퍼의 건식각용 정전척(Electrostatic chuck)에 관한 것으로 더욱 상세하게는 웨이퍼에 냉각가스를 분사하는 냉각공과 저부면에 형성된 저장부가 상호 일대일로 연통되도록 하는 웨이퍼의 건식각용 정전척에 관한 것이다.The present invention relates to an electrostatic chuck for wafers, and more particularly, to a dry etching electrostatic chuck for wafers in which a cooling hole for injecting cooling gas to the wafer and a reservoir formed at the bottom surface thereof communicate with each other one-to-one. It is about.
일반적으로 반도체 제조공정 중 웨이퍼 건식각장치는 웨이퍼를 공정 챔버내의 정전척에 적재하고 공정 조건에 적합하게 압력 및 온도를 유지하면서 공정가스를 유입하여 RF(Ratio frequency)를 인가하므로써 공정가스와 상호 반응하여 공정 챔버내를 플라즈마 상태로 조성하여 웨이퍼를 식각하는 장치이다.In general, during the semiconductor manufacturing process, the wafer dry etching device interacts with the process gas by loading the wafer into the electrostatic chuck in the process chamber and applying the RF (Ratio frequency) by introducing the process gas while maintaining pressure and temperature appropriate to the process conditions. To etch the wafer by forming the inside of the process chamber in a plasma state.
이러한 웨이퍼 건식각장치에서 식각작업이 진행될 때 웨이퍼의 표면온도가 상승하고 이에따라 웨이퍼가 과다식각 또는 과소식각되므로 항상 균일한 온도를 유지하여야 한다. 따라서 웨이퍼의 온도를 조절하기 위해서는 웨이퍼가 장착된 정전척에 다 수개 형성된 냉각공을 통하여 냉각가스를 분사하므로써 웨이퍼의 온도를 균일하게 유지한다.When the etching operation is performed in such a wafer dry etching apparatus, the surface temperature of the wafer rises, and accordingly, the wafer is overetched or underetched. Therefore, in order to control the temperature of the wafer, the temperature of the wafer is kept uniform by spraying the cooling gas through a plurality of cooling holes formed in the electrostatic chuck on which the wafer is mounted.
종래의 정전척은 도 1에서 도시된 바와같이 웨이퍼(5)가 안착되는 상부면에 일정간격으로 분포하는 냉각공(3a)(3b)과, 상기 냉각공(3a)(3b)을 상호 연통하는 연결관(7)과,저부 일측에 형성되어 유입된 냉각가스를 균일하게 분포시키며, 상기 냉각공(3a)(3b)과 상호 연통되어 냉각가스가 모이는 저장부(9)로 구성된다.As shown in FIG. 1, a conventional electrostatic chuck communicates with the cooling holes 3a and 3b and the cooling holes 3a and 3b which are distributed at regular intervals on the upper surface on which the wafer 5 is seated. It consists of a connecting pipe 7 and a storage portion 9 formed at one side of the bottom to uniformly distribute the introduced cooling gas, and communicate with the cooling holes 3a and 3b to collect the cooling gas.
도 2는 종래의 정전척을 도시한 평면도로써 웨이퍼(5)가 안착되는 정전척(1)의 상부면에는 다 수개의 냉각공(3a)(3b)이 천공된다. 이러한 냉각공(3a)(3b)은 정전척(1)의 표면에 불규칙한 간격으로 분포하며 형성된다.2 is a plan view of a conventional electrostatic chuck, in which a plurality of cooling holes 3a and 3b are drilled in the upper surface of the electrostatic chuck 1 on which the wafer 5 is seated. The cooling holes 3a and 3b are distributed and formed at irregular intervals on the surface of the electrostatic chuck 1.
이러한 종래의 정전척에서 웨이퍼의 온도가 조절되는 과정은 도 1에서 도시된 바와같이 정전척(1)의 저부 일측에 형성된 저장부(9)에 냉각가스가 유입되어 균일하게 분포된 상태에서 정전척(1)의 상부면에 다 수개 천공된 냉각공(3a)(3b)을 통하여 냉각가스가 웨이퍼(1)의 저면으로 공급된다.In the process of controlling the temperature of the wafer in the conventional electrostatic chuck, as shown in FIG. 1, the electrostatic chuck is uniformly distributed by cooling gas flowing into the storage unit 9 formed at one side of the bottom of the electrostatic chuck 1. Cooling gas is supplied to the bottom surface of the wafer 1 through the cooling holes 3a and 3b which are perforated in the upper surface of (1).
이때, 상기 저장부(9)와 각각의 냉각공(3a)(3b)은 상호 일대일 대응되며 연통되어야 하나 정전척(1)의 끝단부위에 형성된 냉각공(3b)은 직접 저장부(9)와 관통되어 연결되지 못하고 근접한 냉각공(3a)에 연결관(7)으로 일단 연결되어 간접적으로 냉각가스가 공급되므로 상호 일대일로 대응되지 못한 상태에서 냉각가스가 공급된다.At this time, the storage unit 9 and each of the cooling holes (3a) (3b) correspond to each other one-to-one correspondence, but the cooling hole (3b) formed at the end of the electrostatic chuck (1) is directly connected to the storage unit (9) Since the cooling gas is indirectly supplied to the cooling pipe 3a adjacent to the cooling hole 3a which is not penetrated and is indirectly supplied, the cooling gas is supplied in a state that does not correspond to each other one-to-one.
즉, 상기 정전척(1)의 끝단에 형성된 냉각공(3b)은 저장부(7)에 분포된 냉각가스가 근접한 냉각공(3a)에 일단 유입된 후, 일부의 냉각가스가 분기되면서 재유입되어 웨이퍼(5)에 분사되므로 정전척(1)의 중앙부위에 분사되는 냉각가스와는 분사되는 압력, 분사량등에서 차이가 발생한다.That is, the cooling hole 3b formed at the end of the electrostatic chuck 1 once flows into the cooling hole 3a adjacent to the cooling gas distributed in the storage unit 7, and then reflows as some cooling gas branches. As a result, it is injected onto the wafer 5, so that a difference occurs in the pressure, the injection amount, and the like that are injected from the cooling gas injected into the central portion of the electrostatic chuck 1.
이때, 상기 냉각가스는 통상적으로 헬륨(He)가스를 사용한다.In this case, the cooling gas typically uses helium (He) gas.
이렇게 상기 정전척의 표면에 형성되어 안착된 웨이퍼에 냉각가스를 공급하는 냉각공의 분포도는 냉각가스의 압력, 분사량, 웨이퍼의 냉각속도 등에 영향을 미친다. 이러한 냉각가스는 웨이퍼의 각 부위에 균일하게 분사되는 것이 바람직하다.The distribution of the cooling holes for supplying the cooling gas to the wafer formed and seated on the surface of the electrostatic chuck affects the pressure, the injection amount, the cooling rate of the wafer, and the like. This cooling gas is preferably uniformly injected to each portion of the wafer.
따라서, 종래의 정전척은 중앙부위에서는 냉각공과 저장부가 상호 일대일 대응되어 연통되나 외주연 끝단부분에서는 두 개의 냉각공이 하나의 공급관으로 연통되는 한편 정전척 상부면에 형성된 냉각공이 불규칙한 간격을 이루며 천공되므로써 웨이퍼의 냉각속도 및 냉각 균일도가 웨이퍼의 부분별로 차이가 발생하여 과소식각되거나 또는 과대식각되어 반도체의 특성을 저하시키는 문제점이 있다.Therefore, in the conventional electrostatic chuck, the cooling hole and the storage part correspond to each other in a one-to-one correspondence, but at the end of the outer periphery, the two cooling holes communicate with one supply pipe while the cooling holes formed on the upper surface of the electrostatic chuck are perforated at irregular intervals. There is a problem in that the cooling rate and the uniformity of the wafer are different from each other in the wafer so that the wafer is under-etched or over-etched to degrade the characteristics of the semiconductor.
본 고안의 목적은 정전척의 표면에 형성되는 냉각공이 저장부에 상호 일대일 대응되어 연통되도록 하는 한편 냉각공이 정전척의 전체표면에 균일하게 분포하도록 근접한 어느 냉각공을 연결하더라도 정삼각형 구도로 배열되어 균일하게 냉각가스가 분사되는 웨이퍼 건식각 장치용 정전척을 제공하는 데 있다.The object of the present invention is to allow the cooling holes formed on the surface of the electrostatic chuck to communicate with each other in a one-to-one correspondence with the storage unit, while the cooling holes are arranged in an equilateral triangle so that the cooling holes are uniformly distributed over the entire surface of the electrostatic chuck. An electrostatic chuck for a wafer dry etching apparatus is injected.
따라서, 본 고안은 상기의 목적을 달성하고자, 상부면에 웨이퍼가 안착되어 건식각되는 정전척에 있어서, 상기 정전척의 외주연 끝단에 천공되는 냉각공의 일측에 저장부와 연통되는 연결관을 형성하여 각각의 냉각공과 저장부가 상호 일대일 대응되는 것을 특징으로 한다.Therefore, the present invention, in order to achieve the above object, in the electrostatic chuck that the wafer is mounted on the top surface dry etching, forming a connection tube in communication with the storage portion on one side of the cooling hole perforated at the outer peripheral end of the electrostatic chuck Each of the cooling holes and the storage unit is characterized in that corresponding to each other.
도 1은 종래의 정전척을 도시한 요부단면도이고,1 is a main cross-sectional view showing a conventional electrostatic chuck,
도 2는 종래의 정전척을 도시한 평면도이고,2 is a plan view showing a conventional electrostatic chuck,
도 3은 본 고안의 정전척을 도시한 요부단면도이고,Figure 3 is a sectional view of the main part showing the electrostatic chuck of the present invention,
도 4는 본 고안의 정전척을 도시한 평면도이다.Figure 4 is a plan view showing an electrostatic chuck of the present invention.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
1, 100 : 정전척, 3a,3b,103a,103b : 냉각공,1, 100: electrostatic chuck, 3a, 3b, 103a, 103b: cooling hole,
5 : 웨이퍼, 7 : 연결관,5: wafer, 7: connector,
9, 105 : 저장부,9, 105: storage unit,
이하, 첨부된 도면을 참조하여 본 고안을 설명하면 다음과 같다.Hereinafter, the present invention with reference to the accompanying drawings as follows.
도 3은 본 고안의 정전척을 도시한 요부단면도이고, 도 4는 본 고안의 정전척을 도시한 평면도이다.3 is a sectional view showing main parts of the electrostatic chuck of the present invention, and FIG. 4 is a plan view of the electrostatic chuck of the present invention.
웨이퍼(5)가 안착된 정전척(100)의 상부면에 냉각공(103a)(103b)이 다 수개 형성된다.A plurality of cooling holes 103a and 103b are formed on the upper surface of the electrostatic chuck 100 on which the wafer 5 is seated.
이때 상기 냉각공(103a)(103b)은 상호 일정한 간격으로 형성되어 근접한 각 냉각공(103a)(103b)을 연결하면 정삼각형의 구도가 되도록 위치선정되어 다 수개 천공된다.At this time, the cooling holes 103a and 103b are formed at regular intervals, and when the adjacent cooling holes 103a and 103b are connected to each other, the cooling holes 103a and 103b are positioned so as to form an equilateral triangle and drilled a plurality of holes.
따라서 웨이퍼(5)의 전체면에 분포하는 냉각공(103a)(103b)을 통하여 냉각가스가 웨이퍼(5)의 저부면에 균일하게 전달되어 웨이퍼(5)의 냉각속도 및 냉각균일도가 일정하게 되므로써 과소 또는 과대식각되는 부위의 발생을 방지한다.Therefore, the cooling gas is uniformly transferred to the bottom surface of the wafer 5 through the cooling holes 103a and 103b distributed on the entire surface of the wafer 5, so that the cooling rate and the cooling uniformity of the wafer 5 are constant. Prevent the occurrence of under or over-etched areas.
이때, 상기 정전척(100)의 상부면 바깥쪽에 형성되는 냉각공(103b)은 정전척(100)의 테두리에서 3mm이상 내측으로 이격되어 형성되어 냉각공(103b)을 통하여 냉각가스가 유입되면서 냉각가스의 압력에 의하여 안착된 웨이퍼(5)가 들뜨게 되는 것을 방지한다.At this time, the cooling hole 103b formed on the outer surface of the upper surface of the electrostatic chuck 100 is formed to be spaced inward at least 3 mm from the edge of the electrostatic chuck 100 and cooled while the cooling gas flows through the cooling hole 103b. The wafer 5 seated by the pressure of the gas is prevented from being lifted.
한편 상기 정전척(100)의 끝단에 형성된 냉각공(103a)(103b)은 저장부(105)의 측면과 상호 직접 연통되어 일대일 대응되도록 형성된다.Meanwhile, the cooling holes 103a and 103b formed at the end of the electrostatic chuck 100 are in direct communication with the side surfaces of the storage unit 105 to correspond one-to-one.
즉, 냉각공(103a)(103b)의 일측단과 저장부(105)의 측벽이 상호 연통되도록 하므로써 냉각가스가 각각의 저장부(105)와 일대일 대응되어 연통되는 냉각공(103a)(103b)에 의하여 웨이퍼(5)에 전달되도록 한다. 따라서 정전척(100)의 저장부(105)에 유입된 냉각가스는 각 냉각공(103a)(103b)을 통하여 균일하게 웨이퍼(5)에 분사된다.That is, by allowing one side end of the cooling holes 103a and 103b and the side wall of the storage unit 105 to communicate with each other, the cooling gas is connected to each of the storage units 105 in a one-to-one correspondence with the cooling holes 103a and 103b. To be transferred to the wafer 5. Therefore, the cooling gas introduced into the storage unit 105 of the electrostatic chuck 100 is uniformly injected to the wafer 5 through the respective cooling holes 103a and 103b.
본 고안의 정전척에 의한 냉각가스 공급과정을 알아보면 다음과 같다.Looking at the cooling gas supply process by the electrostatic chuck of the present invention is as follows.
도면을 참조하면 상부면에 웨이퍼(5)가 장착되어 건식각 공정이 진행되는 정전척(100)에서 웨이퍼(5)를 일정한 온도로 유지하기 위하여 냉각공(103a)(103b)을 통하여 냉각가스가 분사된다.Referring to the drawings, in order to maintain the wafer 5 at a constant temperature in the electrostatic chuck 100 in which the wafer 5 is mounted on the upper surface and the dry etching process is performed, cooling gas is supplied through the cooling holes 103a and 103b. Sprayed.
이러한 냉각가스는 일단 정전척(100)의 저부에 형성된 저장부(105)에 유입된 후 균일하게 분포된 상태에서 정전척(100)에 일정한 간격으로 형성된 냉각공(103a)(103b)을 통하여 웨이퍼(5)의 배면에 분사된다. 이때 각각의 냉각공(103a)(103b)은 저장부(105)와 상호 일대일로 대응되어 형성되고, 상호 인접한 냉각공(103a)(103b)을 연결하면 정삼각형을 이루도록 일정한 간격으로 형성되므로써 냉각가스의 분사량과 압력이 전체면에 걸쳐 동일한 상태에서 분사가 이루어진다.The cooling gas is introduced into the storage 105 formed at the bottom of the electrostatic chuck 100 and then wafers are formed through the cooling holes 103a and 103b formed at regular intervals in the electrostatic chuck 100 in a uniformly distributed state. Sprayed to the back of (5). At this time, each of the cooling holes (103a, 103b) are formed in one-to-one correspondence with the storage unit 105, by connecting the adjacent cooling holes (103a, 103b) are formed at regular intervals to form an equilateral triangle of the cooling gas Injection is performed with the injection amount and pressure being the same throughout the entire surface.
따라서 웨이퍼의 전체면에 고르게 냉각가스가 공급되어 균일한 온도로 저하된다.Therefore, the cooling gas is uniformly supplied to the entire surface of the wafer and lowered to a uniform temperature.
상기에서 상술된 바와 같이, 본 고안은 정전척의 표면에 형성되는 냉각공이 저장부에 상호 일대일 대응되어 연통되도록 하는 한편 근접한 어느 냉각공을 연결하더라도 정삼각형 구도로 배열되어 웨이퍼에 분사되는 냉각가스의 분사량 및 압력을 일정하게 유지하므로써 웨이퍼의 냉각속도를 균일하게 하고 이에따라 웨이퍼의 균일한 식각층을 형성하는 잇점이 있다.As described above, the present invention allows the cooling holes formed on the surface of the electrostatic chuck to communicate with each other in a one-to-one correspondence with the storage unit, and the amount and pressure of the cooling gas sprayed onto the wafer are arranged in an equilateral triangle composition regardless of which adjacent cooling holes are connected. By maintaining the constant, the cooling rate of the wafer is made uniform, and accordingly, there is an advantage of forming a uniform etching layer of the wafer.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970031191U KR200174033Y1 (en) | 1997-11-06 | 1997-11-06 | Electrostatic chuck for fabricating semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970031191U KR200174033Y1 (en) | 1997-11-06 | 1997-11-06 | Electrostatic chuck for fabricating semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990018006U KR19990018006U (en) | 1999-06-05 |
| KR200174033Y1 true KR200174033Y1 (en) | 2000-03-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019970031191U KR200174033Y1 (en) | 1997-11-06 | 1997-11-06 | Electrostatic chuck for fabricating semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR200174033Y1 (en) |
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1997
- 1997-11-06 KR KR2019970031191U patent/KR200174033Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR19990018006U (en) | 1999-06-05 |
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